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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor BC 575 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor BC 575

Abstract: BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b I/transistor BC 575 77 ic marking code 6520* transistor BFY90 TRANSISTOR BC 208 DG533
Text: transistor not necessary, because box can be opened on top or bottom Example for order No.: BC 237 C DU Z DU , Transistor Applications: General up to GHz range Features: · Power gain 8 dB (800 MHz) · Noise figure , . -65.+200 Typ. Max. V V V mA mA mW mW °C °C tot 575 350 K/W K/W ICBO V(BR)CBO*· 15 30 15 , order number. Example: B C 238C Order-No. of Type Code forTO-92 Transistors Orientation of transistor on tape1 1 Additional marking for specialsa) ') 06 * View on flat side of transistor , view on gummed tape


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PDF 569-GS transistor BC 575 BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b I/transistor BC 575 77 ic marking code 6520* transistor BFY90 TRANSISTOR BC 208 DG533
transistor BC 575

Abstract: 4814 mosfet mosfet 4813 CD 4814 4814 transistor 4814 AN569 diode P06A MTP12P10 P06A diode
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's™ Data Sheet Power Field Effect Transistor , ~"worst casa" design. ■■- REV 1 Motorola TMOS Power MOSFET Transistor Device Data 4-813 MTP12P10 , ) See Figure 10 Ciss — 920 PF Output Capacitance C0ss — 575 Reverse Transfer Capacitance crss â , %. 4-814 Motorola TMOS Power MOSFET Transistor Device Data MTP12P10 TYPICAL ELECTRICAL CHARACTERISTICS o à , With Temperature 20 16 S < 12 oc ■S 4 25X lì » f ! // b"C / /1 D0°C H


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PDF MTP12P10 21A-06, O-220AB transistor BC 575 4814 mosfet mosfet 4813 CD 4814 4814 transistor 4814 AN569 diode P06A P06A diode
axial zener diodes marking code c3v6

Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 diode zener BZX 61 C 10 SESCOSEM semiconductor sescosem 74151N HS7030 2N3649
Text: Applications Case Pt o t (mW) max NF N BC VCB* v CEO (VI max h21E h21E* V dt | /| V CE sat ' c ' B 'c at [mA| TO 18 300 20 BC * RO110 109 2 1 20 BC * 1 Low Noise BC 209 (mAI P p IN 1 1 < 4 300 1 2,5 < 10 1 1 , RO110 ROl 10 300 1 45 20 AB* ABC* 2 1 < 0 ,6 1 0 0 /5 2 0,3 BC 177 BC 178 BC 204 BC 205 f Preamp, driver and general use 20 V -V I-A -B 1 ROl 10 Preamp


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PDF BR805A BR81A BR82A BR84A BR86A BR88A BR91A BR92A BR94A BR96A axial zener diodes marking code c3v6 H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 diode zener BZX 61 C 10 SESCOSEM semiconductor sescosem 74151N HS7030 2N3649
1996 - PAL22V10D

Abstract: C22V10 palce22v10-5jc PAL22V10D-10JC TRANSISTOR BC 431 transistor BC 575 cypress palce22v10 programming guide QS3253 PM5348 PALCE22V10
Text: Issue 3: November, 1996 PMC-Sierra, Inc. #105 8555 Baxter Place, Burnaby, BC Canada V5A 4V7 604 , 's TWRENB through a low resistance NMOS transistor acting as a bidirectional switch. The `3253 presents , ns) max '3253 select delay (=6.6 ns) 6.0 ns 5.75 ns ATM device setup (= 5.75 ns) TxCLAV , ) PMC-Sierra, Inc. Issue date: November, 1996. #105 8555 Baxter Place, Burnaby, BC Canada V5A 4V7 604 415


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PDF PM5348 PM5348 PMC-960333 PAL22V10D C22V10 palce22v10-5jc PAL22V10D-10JC TRANSISTOR BC 431 transistor BC 575 cypress palce22v10 programming guide QS3253 PALCE22V10
transistor bc 577

Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
Text: SIEMENS NPN/PNP Silicon Digital Tansistor Array · Switching circuit, inverter, interface circuit, drive circuit · Two (galvanic) internal isolated NPN/PNP Transistor in one package · Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2 Tape loading orientation / Q T op Y iew M , mA, Wce = 5 V, BC . 16 W '·'CEsat Collector-emitter saturation voltage 1) lc = V 0.3 10 , Ccb 3 . MHz PF Semiconductor Group 575 01.97 SIEMENS NPN TYPE DC Current Gain


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PDF 47ki2 Q62702-C2496 OT-363 transistor bc 577 bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
2000 - STK621-051

Abstract: STK621-220 Sanyo STK621 STK630 INVERTER BOARD STK621 STK762-921G 3 phase inverter sanyo STK621 STK630-255A stk611-031 stk621
Text: Inverter + Active Filter STK623-000 Series B+C 5 STK650-000 Series/STK651-000 Series SANYO , Triac power IC Series Name STK630-000 Features Excessive saturation voltage B+C Circuit , ) Output pin (power system) Case Power transistor (bare chip) Solder Chip capacitor/resistor , VD TC Tstg Transistor saturation voltage VCE(sat) 2.8 (Io=3.5A) 3.0 (Io=5A) 3.6 , VCE1 Io IOP VD1 to VD4 Pd VF1 TSD ISD UVSD Unit 600 20 36 Upper transistor 3.0


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PDF EP35E 15-C2, STK621-051 STK621-220 Sanyo STK621 STK630 INVERTER BOARD STK621 STK762-921G 3 phase inverter sanyo STK621 STK630-255A stk611-031 stk621
transistor BC 308

Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Text: MPN SILICON TRANSISTOR , EPITAXIAL PLANAR rRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL * BC 307 BC , voltage Tension basa-émetteur Iq =-2 mA VCE =-5V VBE -0,55 0,62 -0,7 \ *The transistor BC 307 is grouped in two classes of OC gain VI - A La transistor BC 307 est subdivisé en deux classes de gain statique VI - A The transistor BC 308 is grouped in three classes of OC gain VI - A - B Le transistor BC 308 ast subdivisé en trois classes da gain statique V! - A - B The transistor BC 309 is grouped in


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PDF BC307 CB-76 307ast 308ast transistor BC 308 transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
2006 - transistor c915

Abstract: transistor c925 5.1channel subwoofer amplifier transistor c923 U902 kwang sung power inductor c901 transistor SWITCHING TRANSISTOR C144 TRANSISTOR BC 550 c901 470nF 0603 50V
Text: dy=109.4 mW 57.5 55 52.5 50 47.5 45.86 45.75 45 42.5 40 37.5 35 32.5 W 30 27.5 , /Ferrite Inductor 1A/40V Schottky Diode (SMA) 600mA/40V NPN Small signal Transistor (SOT-23) 800mA/40V PNP Small signal Transistor (SOT-23) 6 ch PWM processor (SE, VOL, 192kHz, I2S out) (TSSOP38) 6 ch , /250mW 1% 1206 Metal Film Resistor 10.0k/125mW 1% 0805 Metal Film Resistor Manufacture BC Components BC Components BC Components First Mfr P/N DCA 1206 1% 10k0 DCA 1206 1% 2k70 DCU 0805 1% 10k0


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PDF SLEA054 TAS5086-5186V6EVM TAS5086DBT TAS5186ADDV, 32-bit 24-bit TAS5186ADDV 5012pcb transistor c915 transistor c925 5.1channel subwoofer amplifier transistor c923 U902 kwang sung power inductor c901 transistor SWITCHING TRANSISTOR C144 TRANSISTOR BC 550 c901 470nF 0603 50V
transistor BC 236

Abstract: bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
Text: 000^30^ AL GG BC 635 · BC 637 · BC 639 r - a i -33 Silicon NPN Epitaxial Planar Transistors , available Dimensions In mm · Complementary to BC 636, BC 638, BC 640 2.8 «QB i 1 IS .2 i 1 -2 &2 , 125 °C Collector-base breakdown voltage B C 635 BC 637 BC 639 T1.2/508.0888 E B C 637 60 1 1.5 1 150 5 5 .+ 150 BC 639 80 V A A ·a W °C °C 45 ^ C M P .o , T\ ^thJA 156 125 55 Min , 000^310 7 BC 635 · BC 637 · BC 639 Min. Collector-emitter breakdown voltage lc = 20 mA BC 635 BC 637 B


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PDF BC635 15A3DIN transistor BC 236 bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
transistor BC 236

Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
Text: IAL66 electronic BC 636 · BC 638 · BC 640 Creata« léchnofogtes Silicon PNP Epitaxial Planar , pairs available Dimensions in mm · Complementary to BC 635, BC 637, BC 639 tccanfng 19 O M l^eftnom , Collector-base breakdown voltage -/c = 1 mA BC636 BC 638 BC 640 RthJA r .g ` ^CEO B C 636 45 BC 638 60 1 1.5 1 150 BC 640 80 V A A W °C «C s « ^c ^ CM ~ , P .o , - 5 5 . .+ 150 , TELEFUNKEN E L E C T R O N IC 17E P ê'iEQ cn b o c m a 'is d IAL6G BC 636 * BC 638 · BC


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PDF IAL66 15A3DIN transistor BC 236 transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente equivalent of transistor bc212 bc 214 transistor A2222 SESCOSEM transistor BFw-11 terminals Brochage BCW91 equivalente transistor BC 141
Text: 100_295 *BCT07A TO-18 300 45 125-260 2 0,95 100/5 300 §_297 * BC 107 B TO-18 300 45 240-500 2 0,95 100/5 , page * BC 108 A TO-18 300 20 125-260 2 0,95 100/5 300 S 297 * BC 108 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 * BC 108 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 109 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 BC 109 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 140 cl.6 TO-39 750 40 40-100 100 1 1000/100 50 307 BC 140 cl.10 TO-39 750 40 60-160 100 1 1000/100 50 307 BC 140


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APC UPS CIRCUIT DIAGRAM rs 1500

Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 800 CIRCUIT diagram UPS APC rs 1000 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Text: IC O N PLANAR NPN AUDIO DRIVER BC 115 The BC115 is a silicon planar epitaxial NPN transistor , IC O N PLANAR PNP GENERAL PURPOSE TRANSISTOR BC 116A The BC116A is a silicon planar epitaxial , mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier , transistor in a. Jedec TO-72 metal case. It is designed for use in AG C prestages up to 260 MHz. ABSOLUTE , F 139 is a germanium mesa PNP transistor in a Je d e c TO-72 metal case. It is particularly designed


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PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 800 CIRCUIT diagram UPS APC rs 1000 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
1998 - BC 547 PIN DIAGRAM

Abstract: IDG 600 TRANSISTOR C 557 B STMicroelectronics Krypton ST952 pin diagram of BC 547 "caller ID" "type 2" hybrid gyrator impedance modem transistor BC 557 TQFP32
Text: activates the off-hook or the CLID external transistor switch. 6 NC Ring LIM2 19 NC , Digital AIN . . . . . . . . . . . If CLID external transistor switch is enabled, a , . These signals control the off-hook and CLID external transistor switches and is sent to the internal , signal in opposite phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits


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PDF ST952 56Kbps TQFP32 ST952TQFP ST952 56Kbps ST75951 TQFP32 BC 547 PIN DIAGRAM IDG 600 TRANSISTOR C 557 B STMicroelectronics Krypton pin diagram of BC 547 "caller ID" "type 2" hybrid gyrator impedance modem transistor BC 557
1998 - IDG 600

Abstract: STMicroelectronics Krypton ST952 "caller ID" "type 2" hybrid BC 547 PIN DIAGRAM ST75951 ST952TQF7 TQFP32 VTAC 4
Text: : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , barrier, ST952 activates the off-hook or the CLID external transistor switch. LIM2 19 NC Ring , external transistor switches and are sent to the internal transmit demodulator and receive modulator , hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits the line current in CLID mode at 1mA max


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PDF ST952 TQFP32 ST952TQF7 ST952 ST75951 IDG 600 STMicroelectronics Krypton "caller ID" "type 2" hybrid BC 547 PIN DIAGRAM ST952TQF7 TQFP32 VTAC 4
1998 - IDG 600

Abstract: STMicroelectronics Krypton clid applications transistor 547 TQFP32 ST952TQF7 ST75951 ST952 Krypton isolation D6510
Text: : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , barrier, ST952 activates the off-hook or the CLID external transistor switch. LIM2 19 NC Ring , off-hook and CLID external transistor switches and are sent to the internal transmit demodulator and , phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits the line current in


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PDF ST952 TQFP32 ST952TQF7 ST952 ST75951 IDG 600 STMicroelectronics Krypton clid applications transistor 547 TQFP32 ST952TQF7 Krypton isolation D6510
2013 - TRANSISTOR BC 534

Abstract: No abstract text available
Text: Height (H) Width (W) inches mm inches mm 4.88 5.75 5.90 7.68 DO-35, DO-41 Glass Case DO , E-LINE TAPE ORIENTATIONS ROUNDED FACE FLAT FACE E BC C BE OPTION B OPTION A ROUNDED , withdrawn from opposite corner. TO92 TRANSISTOR – AMMO PACK Notes: 1. The carrier tape consists of


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PDF DO-15 D0-201 DO-201AD DO-35 DO-41 O220AB/AC, ITO-220AB, ITO-220S, O220F AP02008 TRANSISTOR BC 534
transistor BC 157

Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC161-10 BC transistor series TRANSISTOR
Text: AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN , complementary transistors to BC 140 and BC 1 4 1and are available upon request as matched pairs. Type BC160') BC 160-6 BC 160-10 BC 160-16 BC 160 paired BC 160/BC140 paired BC 161 BC 161-6 BC 161-10 BC 161-16 BC 161 , Dimensions In mm BC 160 40 40 5 1 0.1 175 -55 to +175 3.7 BC 161 60 60 5 1 0.1 175 -55 to +175 3.7 V V , characteristics (Tam b = 25 °C) The transistors BC 160 and BC 161 are grouped at -Iq = 100 mA and -Vce = 1V


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PDF BC160 BC160' 160/BC140 BC161/BC141 8C161 transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC161-10 BC transistor series TRANSISTOR
TRANSISTOR BC 157

Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES transistor bc 102 BC161 transistor f15n
Text: 2SC » ■û23SbOS ooomoa tjusieô^ . PNP Silicon Transistors SIEMENS AKTIEN6ESELLSCHAF Bc 160 BC 161 BC160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN 41873). The , transistors to BC 140 and BC 141 and are available upon request as matched pairs. Type Ordering code BC 1601' Q62702-C228 BC 160-6 Q62702-C228-V6 BC 160-10 Q62702-C228-V10 BC 160-16 Q62702-C228-V16 BC 160 paired Q62702-C228-P BC 160/BC140 paired Q62702-C228-S2 BC1611> Q62702-C252 BC 161-6 Q62702-C230 BC 161-10


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PDF 23SbOS BC160 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16 Q62702-C228-P 160/BC140 Q62702-C228-S2 BC1611> TRANSISTOR BC 157 BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES transistor bc 102 BC161 transistor f15n
2000 - transisTOR C124

Abstract: Operational Transconductance Amplifier pspice c124 transistor cdt660 OPA660 TR BC 548 transistor c202 TI 121 Transistor opa660 pspice transistor directory
Text: consists of the subcircuits DT, DB, and BC . BC , the biasing circuit, supplies current to the transistor , Transistor DT X3 1 4 7 13 14 CBC660; Biasing Circuit BC * C201 1 0 2pF C202 2 0 2pF C203 3 , standards in scope and details. The macromodel for the Diamond Transistor OPA660 gives an example of the , characteristics, while remaining simple enough to ensure fast simulations. THE DIAMOND TRANSISTOR OPA660 Analog , . This operational transconductance amplifier contains the Diamond Transistor (DT) and Diamond Buffer


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BC 109 Transistor

Abstract: transistor bc 107 TRANSISTOR BC 109 BC 108 BC 107 transistor CIL 108 transistor bc 325 BC 109C transistor bc 107b transistor BC 108 transistor
Text: -18 PNP DRIVER/PRE-AMPLIFIER TRANSISTOR - BC 177 45 50 5 75/260* 2 5 200 300 , DRIVER/PRE-AMPLIFIER TRANSISTORS BC 107 45 50 6 110/450 2 5 ' 200 300 0.02 0.25 300 2.5 TO-18 BC 107 A 45 50 6 110/220 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 107B 45 50 6 200/450 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 108 20 30 5 110/800 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 108A 20 30 5 110/220 2 5 200 300 U02 0.25 300 2.5 TO-18 BC 108B 20 30 5 200/450 2 5


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PDF O-237 BC 109 Transistor transistor bc 107 TRANSISTOR BC 109 BC 108 BC 107 transistor CIL 108 transistor bc 325 BC 109C transistor bc 107b transistor BC 108 transistor
1996 - Operational Transconductance Amplifier pspice

Abstract: transisTOR C124 c124 transistor cdt660 transistor c206 OPA660 transistor c202 transistor directory OPA622 DEM-OPA660-3GC
Text: , and BC . BC , the biasing circuit, supplies current to the transistor stages in the DT and DB via , Transistor DT X3 1 4 7 13 14 CBC660; Biasing Circuit BC * C201 1 0 2pF C202 2 0 2pF C203 3 , standards in scope and details. The macromodel for the Diamond Transistor OPA660 gives an example of the , characteristics, while remaining simple enough to ensure fast simulations. THE DIAMOND TRANSISTOR OPA660 Analog , . This operational transconductance amplifier contains the Diamond Transistor (DT) and Diamond Buffer


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PDF CG22DF2) Operational Transconductance Amplifier pspice transisTOR C124 c124 transistor cdt660 transistor c206 OPA660 transistor c202 transistor directory OPA622 DEM-OPA660-3GC
transistor bc 146

Abstract: transistor bc 570 transistor bc 630
Text: FAX: (973) 376-8960 BC146 MINIATURE NPN AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR GENERAL DESCRIPTION The BC 146 isaNPNsilicon planar epitaxial transistor in miniature plastic package , importance. The BC 146 is complementary to PNP BC 200. ALL DIMENSIONS IN mm ABSOLUTE MAXIMUM RATINGS , 1.6°C/mW ELECTRICAL CHARACTERISTICS AT T A =25°C' BC 148Y BC 146R PARAMETER Collector-Base , Impedance Reverse Voltage Transfer Ratio Small Signal Current Gain Output Admittance BC 146R BC


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PDF BC146 BC146G transistor bc 146 transistor bc 570 transistor bc 630
2002 - transistor C546

Abstract: transistor C547 npn smd diode C543 transistor c693 smd diode c548 transistor C372 c528 transistor c545 transistor transistor c367 smd diode c524
Text: -002 (9.00).xls TOTAL QTY 7 7 3 9 Manufacturer Name BC Components BC Components BC Components BC , -00 5% PA 10R Page 1 of 5 1 7 3 1 2 9 BC Components BC Components BC Components BC Components BC Components BC Components DCT 0603 -00 5% PA 27R DCT 0603 -00 5% PA 47R0 DCT 0603 - 00 5 , 0 1 1 2 3 2 19 BC Components BC Components BC Components BC Components BC Components BC Components DCT 0603 - 00 5% PA 1k20 DCT 0603 -00 5% PA 2k2 DCT 0603 -00 5% PA 3k30 DCT 0603


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PDF TAS5100EVM SLEU010A transistor C546 transistor C547 npn smd diode C543 transistor c693 smd diode c548 transistor C372 c528 transistor c545 transistor transistor c367 smd diode c524
lm 7803

Abstract: "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor AVALANCHE TRANSISTOR 60GHz transistor ED-36 two bjt bc 107 30GHZ
Text: transistor may operate in quasi-saturation. Due to the Kirk effect the internal b-c junction voltage is then , is shown. The model will be part of the bipolar compact transistor model Mextram 504, but also can be used separately. 1 Introduction In a bipolar transistor near the breakdown voltage avalanche currents , known that the collector current modulates the maximum electric field in the b-c depletion layer , critical electric field. We use for an NPN transistor an = 7.05 • 107 m_1 and bn = 1.23 • 108V/m and


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PDF 30GHZ, 60GHZ ED-42 ED-39 lm 7803 "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor AVALANCHE TRANSISTOR 60GHz transistor ED-36 two bjt bc 107 30GHZ
2006 - wabash relay

Abstract: 1820-3145 1826-0346 RK73H2BT1621F GRM3195C1H102JD01D 5053HD619K0F e1420 Caddell-Burns Manufacturing 1826-0180 tkf 28
Text: .125W TF TC=0+-100 5053HD10K00F CMF-551002FT-1 NK4H.125W1%+/100PPM1002 VISHAY BC COMPONENTS , =0+-100 5053HD5K620F CMF-555621FT-1 NK4H.125W1%+/100PPM5621 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R12 , -551001FT-1 NK4H.125W1%+/100PPM1001 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R13, 25, 26, 41, 45, 50 , =0+-100 5053HD464R0F CMF-554640FT-1 NK4H.125W1%+/100PPM464R0 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R16 , -551100FT-1 NK4H.125W1%+/100PPM110R0 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R17, 19, 20, 28, 30, 31


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PDF E1420B E1420B E1420-68006 E1420-68006 wabash relay 1820-3145 1826-0346 RK73H2BT1621F GRM3195C1H102JD01D 5053HD619K0F e1420 Caddell-Burns Manufacturing 1826-0180 tkf 28
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