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LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor BC 310 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BCW General Purpose Transistor

Abstract: l9902
Text: BCW60A/B/C/D GENERAL PURPOSE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS (TA =25°C) C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector Dissipation Storage Tem perature Sym bol V cbO V cE O V , Gain BCW 60B BC W 60C BC W 60D BC W 60A BCW 60B BC W 60C BC W 60D BC W 60A BCW 60B BC W 60C BC W 60D C , V ce= 5V, lc=2m A 220 310 460 630 V ce= 1V, lc=50m A VcE(sat) VBE(sat) VBE(sat) C ob fT NF


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PDF BCW60A/B/C/D BCW General Purpose Transistor l9902
telefunken ta 350

Abstract: transistor BC 310 BF310 BC238C MOSFET sot-143 TO92 telefunken transistors Transistor A12 transistor AC 237 transistor bc 238 b
Text: DDDSlfl^ BF 310 Silicon NPN Epitaxial Planar RF Transistor Applications: General up to 100 MHz In , TELEFUNKEN ELECTRONIC BF 310 Ô1C D ■fi^SOO^ 00051^0 DC characteristics rtmb=25°C, unless otherwise , the taping-code to the order number. Example: aic d filEOOIb 0005153 b BC 238 C DU Order-No. of Type Code for TO-92 Transistors 06 'Z - I T Orientation of transistor on tape11 Additional marking for specials31 ') 06 » View on flat side of transistor , view on gummed tape 05 = View on round side


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PDF ft-11 569-GS 000s154 hal66 if-11 telefunken ta 350 transistor BC 310 BF310 BC238C MOSFET sot-143 TO92 telefunken transistors Transistor A12 transistor AC 237 transistor bc 238 b
SiC BJT

Abstract: Transistor BC 457 bipolar transistor ghz s-parameter 4h sic rf POWER BJTs RF transistors with s-parameters NPN transistor mhz s-parameter RF Transistor s-parameter bipolar transistor s-parameter RF Bipolar Transistor
Text: RF figures of merit reported to date for any SiC bipolar transistor . The calculated maximum , SiC bipolar transistor . 50 µm Fig. 2. Micrographs of a 4-finger RF BJT with , 19 -3 9×10 cm 19 -3 3×10 cm 18 -3 8×10 cm 15 -3 8×10 cm 19 -3 1×10 cm 18 -3 ~10 cm , the following formulae [14, 15]: 25 Fig. 3. I-V characteristics of a 4-finger RF transistor . IB , |, U and GMAX from a 4-finger 4H2 SiC transistor biased at VCE = 20 V and JE = 10.6 kA/cm are


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1999 - BCW61A

Abstract: marking BA RT TRANSISTOR PNP BA RT SOT 89 BCW61B BCW61C BCW61D
Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (TA=25°C) ° Characteristic Collector-Base Voltage Collector-Emitter Voltage , , IB2= -1mA R1=R2=50K, RL=990 -20 0.68 0.6 0.6 Unit V V nA 220 310 460 630 -0.55 , Fairchild Semiconductor Corporation BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR MARKING CODE TYPE BCW61A BCW61B BCW61C BCW61D MARK. BA BB BC BD TRADEMARKS The


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PDF BCW61A/B/C/D OT-23 KS5086 BCW61A marking BA RT TRANSISTOR PNP BA RT SOT 89 BCW61B BCW61C BCW61D
1998 - 2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET diode S6 78A transistors bf 517 TRANSISTOR BC 450 pnp BFG sot89 BC 327 SOT 23 BAS20 SOT23 bcp 846 DIODE TA 70/04
Text: mA Double Transistor Arrays w BC 846PN N/P 65 200 330 250 15 30 110 - 450* 2 , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 RF-Dual Transistor , . . . . . . . . . . . . . 17 Double Transistor Arrays . . . . . . . . . . . . . . . . . . . . . . . , 2 1800 SOT-343 ­ 0.95 2 w New type RF-Dual Transistor Arrays Characteristics (TA = 25 , Gain dB NF dB f mW Gain dB f mA BGA 310 60 250 10 6.0 100 9


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PDF O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET diode S6 78A transistors bf 517 TRANSISTOR BC 450 pnp BFG sot89 BC 327 SOT 23 BAS20 SOT23 bcp 846 DIODE TA 70/04
1996 - MOSFET TRANSISTOR SMD MARKING CODE nh

Abstract: TRANSISTOR SMD MARKING CODE LF MMIC SOT 343 marking CODE BC 148 TRANSISTOR PIN CONFIGURATION TRANSISTOR SMD CODE PACKAGE SOT363 smd diode sod-323 marking code 31 smd mosfet sot-363 SMD TRANSISTOR MARKING BF transistor 313 smd smd code marking SOT223 MINI POWER MOSFET
Text: islands act as carriers of twin-diode pairs or transistor chips (RF and LF types). Alignment of pins on , . Thus a four-pin RF bipolar transistor in the SOT-343 package attains about 1 dB more gain at 1.8 GHz , Configuration BC 847 S BC 857 S BC 847 PN BCR 133 S to BCR 148 S BCR 183 S to BCR 198 S BCR 10 PN to , 100 250 2 npn transistors 2 pnp transistors 1 npn, 1 pnp transistor 2 npn digital transistors 2 pnp digital transistors 1 npn, 1 pnp digital transistor VR V IF mA Ptot mW 70


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K4175

Abstract: BC 148 TRANSISTOR PIN CONFIGURATION buk417-500ae transistor BC 147 sf 128 transistor BUK417-500BE transistor bc 148 BUK417-500B BC 148 transistor bc 147 B transistor
Text: Specification PowerMOS transistor BUK417-500AE/BE GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in Switched Mode Power Supplies , €ž. Total power dissipation 310 310 W Rds ON,- Drain-source on-state 0.13 0.16 Q resistance PIN , source current (pulse 5.0 A peak value) Total power dissipation Trb= 25'C - 310 W ts-g , E9 711DflSb QObBfl^O MST HPHIN Philips Semiconductors Product Specification PowerMOS transistor


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PDF 711DflSb BUK417-500AE/BE OT227B BUK417 -500AE -500BE BUK417-500AE K4175 BC 148 TRANSISTOR PIN CONFIGURATION buk417-500ae transistor BC 147 sf 128 transistor BUK417-500BE transistor bc 148 BUK417-500B BC 148 transistor bc 147 B transistor
UA776

Abstract: 77607 transistor BC 247 UA741 1N4148 mua776 UA776CD UA776CN UA776I UA776M
Text: V Ptot Power Dissipation 500 310 310 mW Infinite Operating Free Air , connected to VCC Recommended for : VCC 776-04.EPS R set connected to ground TRANSISTOR CURRENT SOURCE BIASING 776-05.EPS VCC VCC 6V FET CURRENT SOURCE BIASING UA776 UA776 BC , 0.75nA 100k C1 0.1µF Gate Sample +15V Iset -15V 1N4148 BC 487 -15V Hold , 270k R5 5.6k R1 100k R2 1M UA776 eo BC 487 -1.2V R3 91k +15V UA776


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PDF UA776 UA776C UA776I UA776M UA776CN, UA776CD UA776 77607 transistor BC 247 UA741 1N4148 mua776 UA776CD UA776CN UA776I UA776M
1995 - TRANSISTOR BC 157 pin connection

Abstract: UA776 TRANSISTOR BC 157 BF247 transistor BC 247 UA776CN UA776CD 77603 UA741 1N4148
Text: V Ptot Power Dissipation 500 310 310 mW Infinite Operating Free Air , 776-04.EPS R set connected to ground TRANSISTOR CURRENT SOURCE BIASING 776-05.EPS VCC VCC 6V FET CURRENT SOURCE BIASING UA776 UA776 BC 487 VB R1 VG 776-06.EPS VCC , Sample +15V Iset -15V 1N4148 BC 487 -15V Hold MULTIPLEXING AND SIGNAL CONDITIONING , 100k R2 1M UA776 eo BC 487 -1.2V R3 91k +15V UA776 22M PD = 600nW


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PDF UA776 UA776C UA776I UA776M UA776CN, UA776CD UA776 TRANSISTOR BC 157 pin connection TRANSISTOR BC 157 BF247 transistor BC 247 UA776CN UA776CD 77603 UA741 1N4148
1996 - transistors BC 543

Abstract: 183W BCR191P sot-23 p1 TRANSISTOR BC 530 SOT23 BCV 27 diode S6 78A Diode BAW 62 mmic amplifier sot-89 p4 diode sot 143 s5
Text: Transistor Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . 10 Double Transistor Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . , Transistor Arrays Type N = NPN P = PNP Characteristics (TA = 25 °C) Maximum Ratings VCE0 IC , Gain dB f mA w BGA 310 60 250 10 6.0 100 9 6.5 1000 SOT-143 w BGA , BC 807 P 45 1000 330 200 100 25 100 - 630* 100 1 0.70 500 50 SOT-23 w BC


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PDF OT-23 OT-363 OT-143 transistors BC 543 183W BCR191P sot-23 p1 TRANSISTOR BC 530 SOT23 BCV 27 diode S6 78A Diode BAW 62 mmic amplifier sot-89 p4 diode sot 143 s5
TR BC 107

Abstract: No abstract text available
Text: 1 cf 2 ci 3 ci 4 ci 5 et 6 cf 7 et 8 ci_ 1,00 [0,040] (2 RLS,) PART NUMBER P — PCT421 6/X-TR REV. I E.C.N. NUMBER AND REVISION COMMENTS REV. DATE ANEDE MARK 5=15 3=14 3=13 3=12 3=11 3=10 =J3= 9 , DRAWN BY: TM/ BC CHECKED BY: APPROVED BY: DATE: 8-12-99 PAGE: 1 OE 2 SCALE: N/A ELECTRO-OPTICAL , SIXTEEN PIN SURFACE MOUNT QUAD CHANNEL PHOTOCOUPLER, BIPOLAR INPUT, TRANSISTOR OUTPUT, WITHOUT EXTERNAL , : 1-847-359-2790 WEB: HTTP://WWW.LUMEX.COM DRAWN BY: TM/ BC CHECKED BY: APPROVED BY: DATE: 8-12-99 PAGE: 2 OF 2


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PDF PCT421 TR BC 107
F1K marking

Abstract: No abstract text available
Text: SILICON TRANSISTOR BCW 61 C BC BCW 61 D BD FAIRCHILD S E M IC O N D U C T O R T M TRADEM ARKS , BCW61A/B/C/D GENERAL PURPOSE TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA =25°C) C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature · Refer to KS5086 fo r graphs Sym , 20 40 100 120 140 250 380 60 80 100 100 V ce= -5V, lc= -2m A 220 310 460 630 VCE= -5V, lc


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PDF BCW61A/B/C/D KS5086 BCW61 F1K marking
1996 - MTDF1P02HD

Abstract: No abstract text available
Text: MTDF1P02HD Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistor Motorola , Resistance DEVICE MARKING BC ORDERING INFORMATION Device MTDF1P02HD Reel Size Tape Width , . ©Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996 1 MTDF1P02HD ELECTRICAL , Transistor Device Data MTDF1P02HD PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI , MILLIMETERS MIN MAX 2.90 3.10 2.90 3.10 ­­­ 1.10 0.25 0.40 0.65 BSC 0.05 0.15 0.13 0.23 4.75


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PDF MTDF1P02HD/D MTDF1P02HD MTDF1P02HD/D* MTDF1P02HD
diode S6 78A

Abstract: mmic CEA SOT363 TRANSISTOR PNP BA RT SOT 89 transistor 6bw 32N45 BF1012S up 6103 s8 6bw sot-23 TRANSISTOR BC 545 6bw 12 transistor
Text: - RF-Double Transistor Arrays , . 22 Double Transistor Arrays , 450 24 RF-Dual Transistor Arrays Type N =NPN P = PNP Maximum Ratings VcEO lc V mA T BFS 460 T BFS , Transistors Type N = NPN P =PNP BC 807 BC 807W BC 808 BC 808W BC 817 BC 817W BC 818 BC 818W BC 846 BC 846W BC 847 BC 847W BC 848 BC848W BC 856 BC 856W BC 857 BC 857W BC 858 BC 858W BCP 51 BCP 52 BCP 53 BCP 54 BCP


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PDF O-92tl O-92d diode S6 78A mmic CEA SOT363 TRANSISTOR PNP BA RT SOT 89 transistor 6bw 32N45 BF1012S up 6103 s8 6bw sot-23 TRANSISTOR BC 545 6bw 12 transistor
2SK922

Abstract: mos fet 120v 10A 2SC4293 2SC4294 fet Marking M3
Text: SANYO SLHICONDUtTOK ©2SC4293 Silicon Transistor Vary High-Definition Color Display Horizontal , °C). • tf = 300ns max. ©2SC4294 Silicon Transistor Very High-Definition Color Display Horizontal , 300ns max. S32SD2002 Silicon Transistor Horizontal Deflection Output Applications • SANYO: T03PML , AND ATTACHMENTS • All of Sanyo Transistor case outlines are illustrated below. • All dimensions , ■«-5.0—» t-0.45 <-14.0 -► 0.44 JEDEC: TO-92 EIAJ : SC-4 3 SANYO: NP "8 - B-C Of 4.0-1 B. Base C


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PDF 2SC4293 T03PML 300ns 2SC4294 S32SD2002 0DGB752 2SK922 mos fet 120v 10A fet Marking M3
2001 - marking B22 sot-23

Abstract: bc 2001 transistor BCW61A BCW61B BCW61C BCW61D KST5086
Text: BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -32 Units V VCEO , , IB= -0.25mA V 220 310 460 630 V nA -0.55 -0.25 V V 0.68 0.6 1.05 0.85 , BCW61B BCW61C BCW61D Mark. BA BB BC BD Marking BA ©2001 Fairchild


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PDF BCW61A/B/C/D OT-23 KST5086 marking B22 sot-23 bc 2001 transistor BCW61A BCW61B BCW61C BCW61D
BC transistor series catalog

Abstract: BCW67 BD PNP BCW29R BCW60B BCW60A BCW33 BCW32 BCW31 BCW30
Text: ffSPRQGUE BIPOLAR TRANSISTORS • BIPOLAR TRANSISTORS THE MARK OF RELIABILITY SERIES BCW MICROMINIATURE TRANSISTORS • Series BCW consists of standard Pro-Electron transistor type numbers. • These , 180 310 2 5 0.35 0.60 0.85 10 0.25 4.5 125 10 — g(2> BCW60C AC NPN 32(i) 32 5 20 32 20 4 250 460 2 , -0.60 -0.85 -10 -0.25 6 — — — g(2) BCW61B BB PNP -32"» -32 -5 -20 -32 -20 -5 180 310 2 -5 -0.25 -0.60 -0.85 -10 -0.25 6 — — 800(3) 6(2) BCW61C BC PNP _32


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PDF T0-236AA T0-236AB BCW29 BCW29R Pinning16' O-236AA/AB BCW70 BCW71 BCW72 BC transistor series catalog BCW67 BD PNP BCW60B BCW60A BCW33 BCW32 BCW31 BCW30
2001 - FD227

Abstract: DRD3515A MAS3506D PI13 MAS 35
Text: by reading the PIO register (see Table 3­10 ) (I) PI2, PI1, PI0 unsynched synched to BC , Converter Stand-by Functions Start-up Sequence Interfaces Broadcast Channel ( BC ) Input Interface , incoming digital WorldSpace Broadcast Channel ( BC ) and decodes MPEG 1/2/2.5 Layer 31) encoded audio data , receiver (Figure 1­1) Aux1/2 AM/FM (analog) Receiver, Tape Player MAS 3506D I2S BC , The complete WorldSpace Broadcast Channel ( BC ) is available as a serial output signal from the DRD


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PDF 6251-433-1PD 3506D FD227 DRD3515A MAS3506D PI13 MAS 35
germanium

Abstract: BLY34 KPL 3009 2SB502 2sb504 ADY20 acy52 bf197 bf505 transistor bc 5488
Text: 0 8 Transistor Data Tables 4 BC 178 P+ 1 3 4 5 6 7 8 9 10 11 Type M n fr. Ma PI Gb , 100 4 ,1 9 ,2 0 ,2 2 ) ,k p l. B C 3 3 7 P Transistor Data Tables 6 BC 328+ 4 Typo M n fr . Â , 310 1 0 0 .1 0 0 0 0,1 T BC 334 Mo S P 22 F 25 50 310 1 0 0 .1 0 0 0 0,1 >50 k p l.B C 3 3 3 T BC 33S Mo S N 22 F 25 50 310 1 0 0 .1 0 0 0 0,1 >50 k p l.B C 3 3 6 T BC 336 Mo S P 22 F 25 50 310 1 0 0 .1 0 0 0 0,1 >50 T B C 337 T S H J f.o i S N 12


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transistor BC 308

Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Text: MPN SILICON TRANSISTOR , EPITAXIAL PLANAR rRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL * BC 307 BC , voltage Tension basa-émetteur Iq =-2 mA VCE =-5V VBE -0,55 0,62 -0,7 \ *The transistor BC 307 is grouped in two classes of OC gain VI - A La transistor BC 307 est subdivisé en deux classes de gain statique VI - A The transistor BC 308 is grouped in three classes of OC gain VI - A - B Le transistor BC 308 ast subdivisé en trois classes da gain statique V! - A - B The transistor BC 309 is grouped in


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PDF BC307 CB-76 307ast 308ast transistor BC 308 transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Not Available

Abstract: No abstract text available
Text: BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS · Suitable fo r A F-D river stages and low pow er output stages · C om plem ent to BC817/ BC 818 S O T , -45 -25 -5 -800 - 310 150 -65 ~ 150 U nit V V V V V mA mW °C °c Tj T stg 1. Base 2. Em , COLLECTOR CURRENT vs. COLLECTOR EMITTER VOLTAGE PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR CURRENT vs , R ! BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR INPUT AND OUTPUT CAPACITANCE vs. fif


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PDF BC807/BC808 BC817/BC BC807 BC808 BC808 BC807
1994 - SW 2603

Abstract: bc 617 transistor equivalent 4 bit binary divider 72477 MB1515 TRANSISTOR BC1 80241 bc 303 transistor MB1515PFV
Text: output transistor turns ON "H", ON. When BCX bit is "H", the BCX output transistor turns OFF. (X: 1 to , 4.4 - - V Low level output voltage Excluding Do and BC VOL - - - 0.4 V High impedance cutoff current Do 1, 2 BC 1 to 4 IOFF - - - 1.1 mA Excluding Do and BC IOH - ­1.0 - - mA Output current IOL - , ) 724­8777 ©FUJITSU LIMITED 1994 16 New York 898 Veterans Memorial Highway Building 2, Suite 310


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PDF MB1515 MB1515 DS04-21317-2E SW 2603 bc 617 transistor equivalent 4 bit binary divider 72477 TRANSISTOR BC1 80241 bc 303 transistor MB1515PFV
ltzl

Abstract: LM199
Text: devices are QA tested at - 55°C and 125°C. 3-10 /TlintAB T BC H N O LO G V LTZIOOO/LTZIOOOA , temperature stabilization, and a tem perature sensing transistor . External circuitry is used to set operating , Zener Noise Heater Resistance Heater Breakdown Voltage Transistor Q1 Breakdown Transistor Q2 Breakdown , Zenered (about 7V) a permanent degradation in beta wilt result. Pin 5: Temperature compensating transistor collector. Pin 6: Temperature sensing transistor base. If the base emitter junction is Zenered (about 7V


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PDF 05ppm/ LTZ1000/LTZ1000A LTZ1000 LTZ1000A LTZ1000/LTZ1000A LTZ100QA ltzl LM199
transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Text: 255 B F 310 2 SC 460 2 SC 461 2 SC 535 119 119 118 118 119 npn-Silizium transistor fü r H F -V , TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n , . , . npn-Silizium transistor fü r rauscharm e Eingangsstufen von N F-V erstärkern sowie N F-Vor- u n d T reiberstufen npn-Silizium transistor fü r N F-Vor- u n d T reiberstufen npn-Silizium transistor fü r B reitband-, N F-, H F - sowie m ittelschnelle S c h a ltstu fe n


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transistor BC 236

Abstract: bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
Text: 000^30^ AL GG BC 635 · BC 637 · BC 639 r - a i -33 Silicon NPN Epitaxial Planar Transistors , available Dimensions In mm · Complementary to BC 636, BC 638, BC 640 2.8 «QB i 1 IS .2 i 1 -2 &2 , 125 °C Collector-base breakdown voltage B C 635 BC 637 BC 639 T1.2/508.0888 E B C 637 60 1 1.5 1 150 5 5 .+ 150 BC 639 80 V A A ·a W °C °C 45 ^ C M P .o , T\ ^thJA 156 125 55 Min , 000^310 7 BC 635 · BC 637 · BC 639 Min. Collector-emitter breakdown voltage lc = 20 mA BC 635 BC 637 B


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PDF BC635 15A3DIN transistor BC 236 bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
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