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ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN
HFA3134IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

transistor BC 308 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor BC 308

Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Text: statique VI - A The transistor BC 308 is grouped in three classes of OC gain VI - A - B Le transistor BC 308 ast subdivisé en trois classes da gain statique V! - A - B The transistor BC 309 is grouped in , 308 is grouped in three classes of small signal current gain VI - A - B La transistor BC 308ast , MPN SILICON TRANSISTOR , EPITAXIAL PLANAR rRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL * BC 307 BC 308 BC 309 % Preferred device Dispositif recommandé SC 309 and BC 308 transistors are intended or


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PDF BC307 CB-76 307ast 308ast transistor BC 308 transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
2001 - transistor BC 458

Abstract: Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 BC308
Text: BC307/ 308 /309 BC307/ 308 /309 Switching and Amplifier Applications · Low Noise: BC309 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta , . B1, June 2001 BC307/ 308 /309 Electrical Characteristics Ta=25°C unless otherwise noted Symbol , ©2001 Fairchild Semiconductor Corporation Rev. B1, June 2001 BC307/ 308 /309 Typical , Corporation Rev. B1, June 2001 BC307/ 308 /309 Package Demensions TO-92 4.58 ­0.15 +0.25 0.46


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PDF BC307/308/309 BC309 BC307 BC308/309 BC308 BC308ABU transistor BC 458 Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309
2001 - bc 357 transistor datasheet

Abstract: bc 309 b transistor bc 357 transistor BC307 BC 114 transistor BC308 BC307A BC309 transistor BC 308 transistor BC 307
Text: Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308 , A, B, C BC 309 , PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308 , A, B, C BC 309, A, B, C TO-92 Plastic Package , TRANSISTORS BC 307, A, B, C BC 308 , A, B, C BC 309, A, B, C TO-92 Plastic Package ELECTRICAL , BC 307, A, B, C BC 308 , A, B, C BC 309, A, B, C TO-92 Plastic Package TO-92 Plastic Package , Notes BC 307, A, B, C BC 308 , A, B, C BC 309, A, B, C TO-92 Plastic Package Disclaimer The


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PDF BC307 BC308 BC309 C-120 Rev160701 bc 357 transistor datasheet bc 309 b transistor bc 357 transistor BC 114 transistor BC307A BC309 transistor BC 308 transistor BC 307
Not Available

Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308 , A, B, C BC 309, A, B, C TO-92 Plastic , EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308 , A, B, C BC 309, A, B, C TO-92 Plastic Package , TRANSISTORS BC 307, A, B, C BC 308 , A, B, C BC 309, A, B, C TO-92 Plastic Package ELECTRICAL , BC 307, A, B, C BC 308 , A, B, C BC 309, A, B, C TO-92 Plastic Package TO-92 Plastic Package , of 5 Notes BC 307, A, B, C BC 308 , A, B, C BC 309, A, B, C TO-92 Plastic Package


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PDF BC307 BC308 BC309 C-120 Rev160701
BC 114 transistor

Abstract: bc 357 transistor pin details bc 357 transistor bc 357 transistor pin transistor bc 318 transistor BC 153 BC 170 transistor BC307A transistor BC 307 bc 308 transistor pin details
Text: SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC 308 , A, B, C BC 309, A, B, C TO-92 Plastic , BC 307, A, B, C BC 308 , A, B, C BC 309, A, B, C TO-92 Plastic Package ELECTRICAL , BC 308 , A, B, C BC 309, A, B, C TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta , 307, A, B, C BC 308 , A, B, C BC 309, A, B, C TO-92 Plastic Package TO-92 Plastic Package , Notes BC 307, A, B, C BC 308 , A, B, C BC 309, A, B, C TO-92 Plastic Package Disclaimer The


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PDF BC307 BC308 BC309 C-120 Rev160701 BC 114 transistor bc 357 transistor pin details bc 357 transistor bc 357 transistor pin transistor bc 318 transistor BC 153 BC 170 transistor BC307A transistor BC 307 bc 308 transistor pin details
catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente equivalent of transistor bc212 bc 214 transistor A2222 SESCOSEM transistor BFw-11 terminals Brochage BCW91 equivalente transistor BC 141
Text: 307 A F 139 B 300 -45 125*-260* -2 -0,95 100/5 200 S 367 BC 308 VI F 139 B 300 -25 75*-150* -2 -0,95 100/5 200 § 367 BC 308 A F 139 B 300 -25 125*-260* -2 -0,95 100/5 200 § 367 BC 308 B F 139 B 300 -25 , , B, C TPu 75 ►BC 307 367 ►BCW 92 A, B 433 BD 301, A, B TPu 75 ►BC 308 367 ►BCW 93 A, B , 100_295 *BCT07A TO-18 300 45 125-260 2 0,95 100/5 300 §_297 * BC 107 B TO-18 300 45 240-500 2 0,95 100/5 , page * BC 108 A TO-18 300 20 125-260 2 0,95 100/5 300 S 297 * BC 108 B TO-18 300 20 240-500 2 0,95 100/5


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2002 - bc307bta

Abstract: BC307
Text: BC307/ 308 /309 BC307/ 308 /309 Switching and Amplifier Applications · Low Noise: BC309 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta , . A2, August 2002 BC307/ 308 /309 Electrical Characteristics Ta=25°C unless otherwise noted , : BC307/ 308 : BC309 : BC309 VCE= -5V, IC= -0.2mA, RG=2K, f=1KHz VCE= -5V, IC= -0.2mA RG=2K, f=30~15KHz 10 , ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC307/ 308 /309 Typical


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PDF BC307/308/309 BC309 BC307 BC308/309 BC307 bc307bta
2002 - BC308A

Abstract: Transistor BC 308C BC307 Bc308
Text: BC307/ 308 /309 BC307/ 308 /309 Switching and Amplifier Applications · Low Noise: BC309 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta , . A2, August 2002 BC307/ 308 /309 Electrical Characteristics Ta=25°C unless otherwise noted , : BC307/ 308 : BC309 : BC309 VCE= -5V, IC= -0.2mA, RG=2K, f=1KHz VCE= -5V, IC= -0.2mA RG=2K, f=30~15KHz 10 , ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC307/ 308 /309 Typical


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PDF BC307/308/309 BC309 BC307 BC308/309 BC308 BC308A Transistor BC 308C BC307
1997 - TCA4401

Abstract: CD 4049 BP TCA440 IC CD 4027 diode zener BZX 61 C 10 tda4050 LD57C diode BAY61 receiver tca440 monovibrator
Text: BP 104 BC 238 BC 238 BC AA 308 118 680p BC 238 560k 22n 10n J,K AA 118 , 220µ 47k BC 308 56k 6.8n CD SD CD SD 100k 47n 150k 14­87 4049 Table 1 , . Figure 4. 4.7 + 1µ BPW 34 +9 V 1k + 4.7k 47k 1µ 220k 1k 6.8k BC 308 T4 BC , pulses. Due to the oscillation at the output of G4, the Darlington transistor BC875 is periodically , 4 100k 5.6k BC 875 22k 1n 20 kHZ Oscillator Receiver The photodiode BP104 with


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1997 - TAA761A

Abstract: TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238
Text: T1 BC 308 R1 5.6k 2­8 mA Ip 6 IC 3 2 V 0 Adjustment The light barrier is , 1 +9 V 1µ 220k 1k T3 1n T2 100 6.8k T4 22n BC 308 BC 238 2.2k + 1µ , range. The constant current source is realized by the transistor T1, the diodes D1 and D2 as well as the , base of T1. The constant current of the transistor can be adjusted by the potentiometer R2. 3.3 mA , of 30 ms. These pulses are generated by the programmable unijunction transistor BRY56. The emitted


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PDF LD261 BPX81. TAA761A TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238
3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK TI Small Signal FET Catalogue BC547E transistor bc 564 SESCO bcw 91 transistor SESCOSEM
Text: , A BC 307 BC 308 BC 309 BC 313 BC 313 A BC 327 BC 328 BC 337 BC 338 BC 413 BC 414 BC 415 BC 416 , 0 40-300 -1 5 0 150 *B C 307 VI *B C 307 A BC 308 VI BC 308 A BC 308 B BC 309 A BC 309 B , ) C ata lo g u e 183 T2 184T2 185T2 BC 107 ec 108 BC BC BC BC BC 109 140 141 160 161 TPu 75 TPu , 849 367 367 367 373 373 379 379 385 385 391 391 395 395 BC 546 BC 547 BC 548 BC 549 BC 550 BC 556 BC 557 BC 558 BC 559 BC 560 BC 635 BC 636 BC 637 BC 638 BC 639 BC 640 BCW 29 BCW 30 BCW 31 BCW 32 BCW


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bc 574 transistor

Abstract: SMP-03V-BC transistor Bc 574 GP1A40
Text: – Outline Dimensions (Unit: mm) 23.3±0'2 200« 2Q+O.OÎ ■Ö-0.25 3-0.8 Internal connection , : JAPAN SOLDERLESS TERMINAL MSG. CO., LTD. made SMP-03V- BC Terminal: JAPAN SOLDERLESS TERMINAL MSG. CO , V„ut 28 V " Collector-emitter voltage of output transistor Output current Io 50 mA Collector current of output transistor *' Operating temperature Topr —25—1-75 •c The connector should be plugged


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PDF T-41-73 GP1A40 SMP-03V-BC SHF-001T-08BS process20 -t-75 bc 574 transistor transistor Bc 574 GP1A40
AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 tungsram AC125UZ DG 7-123 PENTODE pl 508 ot-400 tungsram
Text: 4 EAA91 (UAF 42) EAA91 EBC41 EBC41 EA BC 80 EC C 82 EC C 83 EC C 81 (EY 86) (EBF 80) (EBF 89) ECH 42 , 154 N 308 N 329 N 369 N 709 OA 2 OA 3 OB 2 OC 3 OD 3 OG 3 R 19 U 26 U 49 U 119 U 142 U 150 U 153 U 154


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PDF 76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 tungsram AC125UZ DG 7-123 PENTODE pl 508 ot-400 tungsram
1996 - mc3843

Abstract: pikatron transformer TFK U2400B TFK U 217 B TFK 1n4148 pikatron car laptop charger schematic SI9120 1N4007W charge battery lm339
Text: PNP transistor is required instead of the simple triac switch owing to a lack of self-commutation for , case are advantageous as far as battery charging is concerned. However, the transistor switch , control. In figure 10, transistor T switches the circuit of input 4 to ground by withdrawing the battery , case, the power MOS transistor used is operated actively via clamp voltage by the Z-diode, D10, as a PWM controlled current sink in order to transfer the discharge energy directly to the MOS transistor


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PDF U240xB U2400B D-74025 21-Mar-96 mc3843 pikatron transformer TFK U2400B TFK U 217 B TFK 1n4148 pikatron car laptop charger schematic SI9120 1N4007W charge battery lm339
1999 - transistor BD 263

Abstract: MAX822 MAX821UUS-T MAX821SUS-T MAX821RUS-T MAX821PUS-T MAX821MUS-T MAX821LUS-T MAX821 U 821 B
Text: BM_ _ MAX821TUS-T 3.08 BB_ _ MAX821SUS-T 2.93 BC _ _ MAX821UUS-T 2.78 BL_ _ MAX821RUS-T 2.63 BD_ _ MAX822LUS-T 4.63 BF_ _ MAX822MUS-T 4.38 BG_ _ MAX822TUS-T 3.08 BH_ _ MAX822SUS-T , 4.45 4.50 4.00 4.04 4.09 3.08 3.11 3.15 2.93 2.96 3.00 2.78 2.81 2.85 , GND BUFFERED RESET TO OTHER SYSTEM COMPONENTS 4.7k µP RESET GND TRANSISTOR COUNT


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PDF MAX821/MAX822 100ms MAX821/MAX822 transistor BD 263 MAX822 MAX821UUS-T MAX821SUS-T MAX821RUS-T MAX821PUS-T MAX821MUS-T MAX821LUS-T MAX821 U 821 B
2000 - transistor BD 263

Abstract: MAX821 MAX822 MAX821UUS-T MAX821SUS-T MAX821RUS-T MAX821PUS-T MAX821MUS-T MAX821LUS-T MAX821TUS-T
Text: MAX821MUS-T 4.38 BA_ _ MAX821PUS-T 4.00 BM_ _ MAX821TUS-T 3.08 BB_ _ MAX821SUS-T 2.93 BC _ _ , MAX822TUS-T 3.08 BH_ _ MAX822SUS-T 2.93 BJ_ _ MAX822RUS-T 2.63 BK_ _ * The first two letters in the , 4.04 4.09 3.08 3.11 3.15 2.93 3.00 2.78 2.81 2.85 2.63 2.66 2.70 30 VCC , GND BUFFERED RESET TO OTHER SYSTEM COMPONENTS 4.7k µP RESET GND TRANSISTOR COUNT


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PDF MAX821/MAX822 OT143 100ms MAX821) MAX821/MAX822 transistor BD 263 MAX821 MAX822 MAX821UUS-T MAX821SUS-T MAX821RUS-T MAX821PUS-T MAX821MUS-T MAX821LUS-T MAX821TUS-T
2005 - MAX821

Abstract: MAX822 MAX821UUS-T MAX821TUS-T MAX821SUS-T MAX821RUS-T MAX821PUS-T MAX821MUS-T MAX821LUS-T transistor BD 263
Text: BM_ _ MAX821TUS-T 3.08 BB_ _ MAX821SUS-T 2.93 BC _ _ MAX821UUS-T 2.78 BL_ _ MAX821RUS-T 2.63 BD_ _ MAX822LUS-T 4.63 BF_ _ MAX822MUS-T 4.38 BG_ _ MAX822TUS-T 3.08 BH_ _ MAX822SUS-T , falling at 1mV/µs tRP 4.75 4.38 4.45 4.00 4.04 3.08 3.11 4.50 4.09 3.15 2.93 , GND BUFFERED RESET TO OTHER SYSTEM COMPONENTS 4.7k µP RESET GND TRANSISTOR COUNT


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PDF MAX821/MAX822 100ms OT-143, MAX821/MAX822 MAX821 MAX822 MAX821UUS-T MAX821TUS-T MAX821SUS-T MAX821RUS-T MAX821PUS-T MAX821MUS-T MAX821LUS-T transistor BD 263
transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Text: 46 B C W 47 B C W 48 B FY 22 B FY 23 B F Y 23a B FY 29 B FY 30 BC 155 BC 156 BC 107 BC 307 BC 308 SC , leistung in mW in ·:1 t" in MHz dB Bauform Art Bemerkungen BC 307 BC 308 Valvo BC 107 ,130 , TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n , . , . npn-Silizium transistor fü r rauscharm e Eingangsstufen von N F-V erstärkern sowie N F-Vor- u n d T reiberstufen npn-Silizium transistor fü r N F-Vor- u n d T reiberstufen npn-Silizium


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transistor BD 263

Abstract: No abstract text available
Text: MAX821SUS-T MAX821UUS-T MAX821RUS-T NOMINAL Vt h (V) 4.63 4.38 4.00 3.08 2.93 2.78 2.63 4.63 4.38 3.08 2.93 2.63 PKG. TOP MARK* A Z _ BA_ BM_ BB_ BC _ BL_ BD_ BF_ B G _ BH _ BJ_ BK , 2.89 2.85 2.74 2.70 2.59 2.55 MAX82 P MAX82.T 4.00 3.08 2.93 2.78 Reset Threshold (Note 1 , _ Chip Information TRANSISTOR COUNT: 492 Figure 3. Interfacing to yPs with Bidirectional Reset I/O


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PDF 100ms MAX821) OT143 MAX821/MAX822 MAX821 /MAX822 transistor BD 263
2000 - MAX821

Abstract: MAX822 MAX821UUS-T MAX821TUS-T MAX821SUS-T MAX821RUS-T MAX821PUS-T MAX821MUS-T MAX821LUS-T transistor BD 263
Text: MAX821MUS-T 4.38 BA_ _ MAX821PUS-T 4.00 BM_ _ MAX821TUS-T 3.08 BB_ _ MAX821SUS-T 2.93 BC _ _ , MAX822TUS-T 3.08 BH_ _ MAX822SUS-T 2.93 BJ_ _ MAX822RUS-T 2.63 BK_ _ * The first two letters in the , 4.04 4.09 3.08 3.11 3.15 2.93 3.00 2.78 2.81 2.85 2.63 2.66 2.70 30 VCC , GND BUFFERED RESET TO OTHER SYSTEM COMPONENTS 4.7k µP RESET GND TRANSISTOR COUNT


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PDF MAX821/MAX822 OT143 100ms MAX821) MAX821/MAX822 MAX821 MAX822 MAX821UUS-T MAX821TUS-T MAX821SUS-T MAX821RUS-T MAX821PUS-T MAX821MUS-T MAX821LUS-T transistor BD 263
equivalent transistor bul128

Abstract: HALL EFFECT 21E equivalent of transistor 2sc4106 2sC2335 TRANSISTOR equivalent BUL208 Shortform Transistor Guide BUF656B KSE13007 equivalent BUF646 BUF656
Text: Transistor Equivalent Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . Operation When the Transistor Is Switched Off and Vflyback > VCEO . . . . . . . , S TRANSISTOR : low power, switching T THYRISTOR: power C GALLIUM-ARSENIDE (Materials with a band gap > 1.3 eV) 1) U TRANSISTOR : power, switching X DIODE: multiplier, e.g , devices C TRANSISTOR : low power, audio frequency D TRANSISTOR : power, audio frequency E


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transistor BC 236

Abstract: bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
Text: 000^30^ AL GG BC 635 · BC 637 · BC 639 r - a i -33 Silicon NPN Epitaxial Planar Transistors , available Dimensions In mm · Complementary to BC 636, BC 638, BC 640 2.8 «QB i 1 IS .2 i 1 -2 &2 , 125 °C Collector-base breakdown voltage B C 635 BC 637 BC 639 T1.2/508.0888 E B C 637 60 1 1.5 1 150 5 5 .+ 150 BC 639 80 V A A ·a W °C °C 45 ^ C M P .o , T\ ^thJA 156 125 55 Min , 000^310 7 BC 635 · BC 637 · BC 639 Min. Collector-emitter breakdown voltage lc = 20 mA BC 635 BC 637 B


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PDF BC635 15A3DIN transistor BC 236 bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
1999 - ADM6315-31D4ARTZR7

Abstract: ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor
Text: STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown , -40°C to +125°C -40°C to +125°C Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline


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PDF OT-143 ADM6315 ADM811 ADM6315 D00081-0-12/11 ADM6315-31D4ARTZR7 ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor
transistor BC 236

Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
Text: IAL66 electronic BC 636 · BC 638 · BC 640 Creata« léchnofogtes Silicon PNP Epitaxial Planar , pairs available Dimensions in mm · Complementary to BC 635, BC 637, BC 639 tccanfng 19 O M l^eftnom , Collector-base breakdown voltage -/c = 1 mA BC636 BC 638 BC 640 RthJA r .g ` ^CEO B C 636 45 BC 638 60 1 1.5 1 150 BC 640 80 V A A W °C «C s « ^c ^ CM ~ , P .o , - 5 5 . .+ 150 , TELEFUNKEN E L E C T R O N IC 17E P ê'iEQ cn b o c m a 'is d IAL6G BC 636 * BC 638 · BC


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PDF IAL66 15A3DIN transistor BC 236 transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
2006 - transistor C 2240

Abstract: ADM6315-44D2ARTZR71 ADM6315-29D2ARTZR71 308 transistor sot143
Text: -Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown in millimeters ORDERING GUIDE , Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline


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PDF OT-143 ADM6315 ADM811 ADM6315 C00081-0-4/06 transistor C 2240 ADM6315-44D2ARTZR71 ADM6315-29D2ARTZR71 308 transistor sot143
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