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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor BC 172B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
capacitor 5mF

Abstract: MSK171 MSK171B MSK172 1A Dual Power Operational Amplifier
Text: TJ TST Storage Temperature TLD Lead Temperature TC Case Operating Temperature (MSK171B/ 172B , SPECIFICATIONS Group A Test Conditions 1 Parameter MSK171B/ 172B MSK171/172 Units Subgroup Min , operational amplifier. Three major power limiting factors are; output transistor wire bond carrying capability, output transistor junction temperature and secondary breakdown effects. To see if your


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PDF ISO-9001 MIL-PRF-38534 MSK172 MSK171 MSK171B MSK172B capacitor 5mF MSK171 MSK171B MSK172 1A Dual Power Operational Amplifier
Not Available

Abstract: No abstract text available
Text: . Lead Temperature. Case Operating Temperature (M SK171B/ 172B ) (M SK17 1 /1 7 2 , Group A MSK171B/ 172B M S K 171/172 Subgroup Min. Typ. Max. Min. - ± 2 .5 , power limiting factors are; output transistor wire bond carrying capability, output transistor


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PDF ISP-9001 -PRF-38534 MSK171 MSK171B Military-Mil-PRF-38534 MSK172 MSK172B
z046

Abstract: 172B 2N1854
Text: ~L-S-19500/ 172B (NAVY) 20 November 1968 SUPERSEDING MIL-s-19500/ 172A(NAVY) 180ctober 1961 NffLITARY SEMICONDUCTOR DEVSCE, SPEC1F1CATION TRANSISTOR , PNP, GERMANfUM, TYPE 2N1854 1. SCOPE 1.1 scope. tt-ansisto=i. This ape.ification covers the detail requirements for a , the transistor RC.OW.E, when turned off. - Fr.sq.e"cy for gain = 5. The EtwqtI.rmy at whieb tha enmif signal cmmnm emitter current gain equaln five. 3.4 transistor and as apecifiad and


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PDF L-S-19500/ MIL-s-19500/ 180ctober 2N1854 MIL-S19500, withMSL-S-19500. MIL-S-195Wi -NZ04 z046 172B 2N1854
TIP51

Abstract: TIP-52 TIP54 TIP-53 TIP-54 TIP53 TIP52 2N6127 texas instruments tip51 1N914
Text: on the capability of the transistor to operate safely in the circuit in Figure 2. L = 20 mH, RBB2 = , nominal; exact values vary slightly with transistor parameters. Texas ^ 5 90 Instruments POST OFFICE , €¢ DALLAS. TEXAS 75265 TEXAS INSTR -COPTOT bE ]>E~| flit 172b 0D3bö34 b 8901726 TEXAS INSTR (OPTO) 62C


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PDF TIP51, TIP52, TIP53, TIP54 O-218 TIP52 TIP500 TIP51 TIP-52 TIP-53 TIP-54 TIP53 2N6127 texas instruments tip51 1N914
TO-210AA Package

Abstract: TIP34C equivalent TIP34D texas instruments tip34 TIP34B TIP34A TIP34 TIP34E TIP34F TIP33
Text: °C free-air temperature at the rate of 28 mW/°C. 4. This rating is based on the capability of the transistor , /°C. 4. This rating is based on the capability of the transistor to operate safely in the circuit in , characteristics t Voltage and current values shown are nominal; exact values vary slightly with transistor , Instruments 547 post office box 225012 • dallas, texas 75265 TEXAS INSTR -COPTO} taÎ>F| flit, 172b


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PDF 03k7fl4 TIP34, TIP34A, TIP34B, TIP34C, TIP34D, TIP34E, TIP34F TIP33 O-218 TO-210AA Package TIP34C equivalent TIP34D texas instruments tip34 TIP34B TIP34A TIP34 TIP34E
36966

Abstract: TIP625 TIP626 TIP620 TIP621 TIP622 TIP627
Text: rating is based on the capability of the transistor to operate safely In the circuit in Figure 2. L = 20 , box 225012 • dallas, texas 75265 5-223 T TEXAS INSTR {OPTO} flit 172b ODBb^S 8961726 TEXAS INSTR , values shown are nominal; exact values vary slightly with transistor parameters. 5-224 , Texas ^


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PDF D03bclb4 TIP625, TIP626, TIP627 TIP620, TIP621, TIP622 T-33-31 TIP625 TIP626 36966 TIP620 TIP621
TEXAS TIP147

Abstract: TEXAS INSTRUMENTS TIP145 tip140 texas instruments TIP147 TIP146 TO-218AA Package TIP145 TIP142 TIP141 2nc128
Text: 225012 • DALLAS, TEXAS 75265 5-183 TEXAS INSTR -COPTO DE§ flit, 172b □□3bc]2S 8961726 TEXAS , transistor parameters. 5-184 Texas ^ Instruments POST OFFICE BOX 225012 • DALLAS, TEXAS 752SS TEXAS


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PDF TIP145, TIP146, TIP147 TIP140, TIP141, TIP142 O-218 T-33-31 TIP14S TIP146 TEXAS TIP147 TEXAS INSTRUMENTS TIP145 tip140 texas instruments TO-218AA Package TIP145 TIP141 2nc128
transistor BC 308

Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Text: MPN SILICON TRANSISTOR , EPITAXIAL PLANAR rRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL * BC 307 BC , voltage Tension basa-émetteur Iq =-2 mA VCE =-5V VBE -0,55 0,62 -0,7 \ *The transistor BC 307 is grouped in two classes of OC gain VI - A La transistor BC 307 est subdivisé en deux classes de gain statique VI - A The transistor BC 308 is grouped in three classes of OC gain VI - A - B Le transistor BC 308 ast subdivisé en trois classes da gain statique V! - A - B The transistor BC 309 is grouped in


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PDF BC307 CB-76 307ast 308ast transistor BC 308 transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
1.0 k mef 250

Abstract: ME4003 BC187 BC185 2N5173 2n4121 2n3072 2N2959 transistor me6101 2.2 k mef 250
Text: BC 170B BC 170C BC 171 BC 171A BC 171 B BC 172 BC 172A BC 172B BC172C BC 173C BC 177 1 , 172B BC 172C BC BC BC BC BC BC 173C 182L 182K 182LA 182KA 182LB BC BC BC BC BC , 6 HIGH SPEED SWITCHING TRANSISTORS 7 MEDIUM POWER TRANSISTORS Transistor Assembly 8 , TRANSISTORS TYPE PAGE BC 108C BC 109 BC 109B BC 109C BC 113 BC 114 BC 115 BC 116 BC 116A BC 117 BC 118 BC 119 BC 125 BC 126 BC 132 BC 134 BC 135 BC 136 BC 137 BC 138 BC 139 BC 140


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PDF semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 BC187 BC185 2N5173 2n4121 2n3072 2N2959 transistor me6101 2.2 k mef 250
transistor BC 236

Abstract: bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
Text: 000^30^ AL GG BC 635 · BC 637 · BC 639 r - a i -33 Silicon NPN Epitaxial Planar Transistors , available Dimensions In mm · Complementary to BC 636, BC 638, BC 640 2.8 «QB i 1 IS .2 i 1 -2 &2 , 125 °C Collector-base breakdown voltage B C 635 BC 637 BC 639 T1.2/508.0888 E B C 637 60 1 1.5 1 150 5 5 .+ 150 BC 639 80 V A A ·a W °C °C 45 ^ C M P .o , T\ ^thJA 156 125 55 Min , 000^310 7 BC 635 · BC 637 · BC 639 Min. Collector-emitter breakdown voltage lc = 20 mA BC 635 BC 637 B


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PDF BC635 15A3DIN transistor BC 236 bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
transistor BC 236

Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
Text: IAL66 electronic BC 636 · BC 638 · BC 640 Creata« léchnofogtes Silicon PNP Epitaxial Planar , pairs available Dimensions in mm · Complementary to BC 635, BC 637, BC 639 tccanfng 19 O M l^eftnom , Collector-base breakdown voltage -/c = 1 mA BC636 BC 638 BC 640 RthJA r .g ` ^CEO B C 636 45 BC 638 60 1 1.5 1 150 BC 640 80 V A A W °C «C s « ^c ^ CM ~ , P .o , - 5 5 . .+ 150 , TELEFUNKEN E L E C T R O N IC 17E P ê'iEQ cn b o c m a 'is d IAL6G BC 636 * BC 638 · BC


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PDF IAL66 15A3DIN transistor BC 236 transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
1998 - BC 547 PIN DIAGRAM

Abstract: IDG 600 TRANSISTOR C 557 B STMicroelectronics Krypton ST952 pin diagram of BC 547 "caller ID" "type 2" hybrid gyrator impedance modem transistor BC 557 TQFP32
Text: activates the off-hook or the CLID external transistor switch. 6 NC Ring LIM2 19 NC , Digital AIN . . . . . . . . . . . If CLID external transistor switch is enabled, a , . These signals control the off-hook and CLID external transistor switches and is sent to the internal , signal in opposite phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits


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PDF ST952 56Kbps TQFP32 ST952TQFP ST952 56Kbps ST75951 TQFP32 BC 547 PIN DIAGRAM IDG 600 TRANSISTOR C 557 B STMicroelectronics Krypton pin diagram of BC 547 "caller ID" "type 2" hybrid gyrator impedance modem transistor BC 557
1998 - IDG 600

Abstract: STMicroelectronics Krypton ST952 "caller ID" "type 2" hybrid BC 547 PIN DIAGRAM ST75951 ST952TQF7 TQFP32 VTAC 4
Text: : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , barrier, ST952 activates the off-hook or the CLID external transistor switch. LIM2 19 NC Ring , external transistor switches and are sent to the internal transmit demodulator and receive modulator , hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits the line current in CLID mode at 1mA max


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PDF ST952 TQFP32 ST952TQF7 ST952 ST75951 IDG 600 STMicroelectronics Krypton "caller ID" "type 2" hybrid BC 547 PIN DIAGRAM ST952TQF7 TQFP32 VTAC 4
1998 - IDG 600

Abstract: STMicroelectronics Krypton clid applications transistor 547 TQFP32 ST952TQF7 ST75951 ST952 Krypton isolation D6510
Text: : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , barrier, ST952 activates the off-hook or the CLID external transistor switch. LIM2 19 NC Ring , off-hook and CLID external transistor switches and are sent to the internal transmit demodulator and , phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits the line current in


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PDF ST952 TQFP32 ST952TQF7 ST952 ST75951 IDG 600 STMicroelectronics Krypton clid applications transistor 547 TQFP32 ST952TQF7 Krypton isolation D6510
transistor BC 157

Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC161-10 BC transistor series TRANSISTOR
Text: AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN , complementary transistors to BC 140 and BC 1 4 1and are available upon request as matched pairs. Type BC160') BC 160-6 BC 160-10 BC 160-16 BC 160 paired BC 160/BC140 paired BC 161 BC 161-6 BC 161-10 BC 161-16 BC 161 , Dimensions In mm BC 160 40 40 5 1 0.1 175 -55 to +175 3.7 BC 161 60 60 5 1 0.1 175 -55 to +175 3.7 V V , characteristics (Tam b = 25 °C) The transistors BC 160 and BC 161 are grouped at -Iq = 100 mA and -Vce = 1V


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PDF BC160 BC160' 160/BC140 BC161/BC141 8C161 transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC161-10 BC transistor series TRANSISTOR
catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente equivalent of transistor bc212 bc 214 transistor A2222 SESCOSEM transistor BFw-11 terminals Brochage BCW91 equivalente transistor BC 141
Text: 100_295 *BCT07A TO-18 300 45 125-260 2 0,95 100/5 300 §_297 * BC 107 B TO-18 300 45 240-500 2 0,95 100/5 , page * BC 108 A TO-18 300 20 125-260 2 0,95 100/5 300 S 297 * BC 108 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 * BC 108 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 109 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 BC 109 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 140 cl.6 TO-39 750 40 40-100 100 1 1000/100 50 307 BC 140 cl.10 TO-39 750 40 60-160 100 1 1000/100 50 307 BC 140


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TRANSISTOR BC 157

Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES transistor bc 102 BC161 transistor f15n
Text: 2SC » ■û23SbOS ooomoa tjusieô^ . PNP Silicon Transistors SIEMENS AKTIEN6ESELLSCHAF Bc 160 BC 161 BC160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN 41873). The , transistors to BC 140 and BC 141 and are available upon request as matched pairs. Type Ordering code BC 1601' Q62702-C228 BC 160-6 Q62702-C228-V6 BC 160-10 Q62702-C228-V10 BC 160-16 Q62702-C228-V16 BC 160 paired Q62702-C228-P BC 160/BC140 paired Q62702-C228-S2 BC1611> Q62702-C252 BC 161-6 Q62702-C230 BC 161-10


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PDF 23SbOS BC160 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16 Q62702-C228-P 160/BC140 Q62702-C228-S2 BC1611> TRANSISTOR BC 157 BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES transistor bc 102 BC161 transistor f15n
2000 - transisTOR C124

Abstract: Operational Transconductance Amplifier pspice c124 transistor cdt660 OPA660 TR BC 548 transistor c202 TI 121 Transistor opa660 pspice transistor directory
Text: consists of the subcircuits DT, DB, and BC . BC , the biasing circuit, supplies current to the transistor , Transistor DT X3 1 4 7 13 14 CBC660; Biasing Circuit BC * C201 1 0 2pF C202 2 0 2pF C203 3 , standards in scope and details. The macromodel for the Diamond Transistor OPA660 gives an example of the , characteristics, while remaining simple enough to ensure fast simulations. THE DIAMOND TRANSISTOR OPA660 Analog , . This operational transconductance amplifier contains the Diamond Transistor (DT) and Diamond Buffer


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BC 109 Transistor

Abstract: transistor bc 107 TRANSISTOR BC 109 BC 108 BC 107 transistor CIL 108 transistor bc 325 BC 109C transistor bc 107b transistor BC 108 transistor
Text: -18 PNP DRIVER/PRE-AMPLIFIER TRANSISTOR - BC 177 45 50 5 75/260* 2 5 200 300 , DRIVER/PRE-AMPLIFIER TRANSISTORS BC 107 45 50 6 110/450 2 5 ' 200 300 0.02 0.25 300 2.5 TO-18 BC 107 A 45 50 6 110/220 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 107B 45 50 6 200/450 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 108 20 30 5 110/800 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 108A 20 30 5 110/220 2 5 200 300 U02 0.25 300 2.5 TO-18 BC 108B 20 30 5 200/450 2 5


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PDF O-237 BC 109 Transistor transistor bc 107 TRANSISTOR BC 109 BC 108 BC 107 transistor CIL 108 transistor bc 325 BC 109C transistor bc 107b transistor BC 108 transistor
1996 - Operational Transconductance Amplifier pspice

Abstract: transisTOR C124 c124 transistor cdt660 transistor c206 OPA660 transistor c202 transistor directory OPA622 DEM-OPA660-3GC
Text: , and BC . BC , the biasing circuit, supplies current to the transistor stages in the DT and DB via , Transistor DT X3 1 4 7 13 14 CBC660; Biasing Circuit BC * C201 1 0 2pF C202 2 0 2pF C203 3 , standards in scope and details. The macromodel for the Diamond Transistor OPA660 gives an example of the , characteristics, while remaining simple enough to ensure fast simulations. THE DIAMOND TRANSISTOR OPA660 Analog , . This operational transconductance amplifier contains the Diamond Transistor (DT) and Diamond Buffer


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PDF CG22DF2) Operational Transconductance Amplifier pspice transisTOR C124 c124 transistor cdt660 transistor c206 OPA660 transistor c202 transistor directory OPA622 DEM-OPA660-3GC
transistor bc 146

Abstract: transistor bc 570 transistor bc 630
Text: FAX: (973) 376-8960 BC146 MINIATURE NPN AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR GENERAL DESCRIPTION The BC 146 isaNPNsilicon planar epitaxial transistor in miniature plastic package , importance. The BC 146 is complementary to PNP BC 200. ALL DIMENSIONS IN mm ABSOLUTE MAXIMUM RATINGS , 1.6°C/mW ELECTRICAL CHARACTERISTICS AT T A =25°C' BC 148Y BC 146R PARAMETER Collector-Base , Impedance Reverse Voltage Transfer Ratio Small Signal Current Gain Output Admittance BC 146R BC


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PDF BC146 BC146G transistor bc 146 transistor bc 570 transistor bc 630
2002 - transistor C546

Abstract: transistor C547 npn smd diode C543 transistor c693 smd diode c548 transistor C372 c528 transistor c545 transistor transistor c367 smd diode c524
Text: -002 (9.00).xls TOTAL QTY 7 7 3 9 Manufacturer Name BC Components BC Components BC Components BC , -00 5% PA 10R Page 1 of 5 1 7 3 1 2 9 BC Components BC Components BC Components BC Components BC Components BC Components DCT 0603 -00 5% PA 27R DCT 0603 -00 5% PA 47R0 DCT 0603 - 00 5 , 0 1 1 2 3 2 19 BC Components BC Components BC Components BC Components BC Components BC Components DCT 0603 - 00 5% PA 1k20 DCT 0603 -00 5% PA 2k2 DCT 0603 -00 5% PA 3k30 DCT 0603


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PDF TAS5100EVM SLEU010A transistor C546 transistor C547 npn smd diode C543 transistor c693 smd diode c548 transistor C372 c528 transistor c545 transistor transistor c367 smd diode c524
lm 7803

Abstract: "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor AVALANCHE TRANSISTOR 60GHz transistor ED-36 two bjt bc 107 30GHZ
Text: transistor may operate in quasi-saturation. Due to the Kirk effect the internal b-c junction voltage is then , is shown. The model will be part of the bipolar compact transistor model Mextram 504, but also can be used separately. 1 Introduction In a bipolar transistor near the breakdown voltage avalanche currents , known that the collector current modulates the maximum electric field in the b-c depletion layer , critical electric field. We use for an NPN transistor an = 7.05 • 107 m_1 and bn = 1.23 • 108V/m and


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PDF 30GHZ, 60GHZ ED-42 ED-39 lm 7803 "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor AVALANCHE TRANSISTOR 60GHz transistor ED-36 two bjt bc 107 30GHZ
2006 - wabash relay

Abstract: 1820-3145 1826-0346 RK73H2BT1621F GRM3195C1H102JD01D 5053HD619K0F e1420 Caddell-Burns Manufacturing 1826-0180 tkf 28
Text: .125W TF TC=0+-100 5053HD10K00F CMF-551002FT-1 NK4H.125W1%+/100PPM1002 VISHAY BC COMPONENTS , =0+-100 5053HD5K620F CMF-555621FT-1 NK4H.125W1%+/100PPM5621 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R12 , -551001FT-1 NK4H.125W1%+/100PPM1001 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R13, 25, 26, 41, 45, 50 , =0+-100 5053HD464R0F CMF-554640FT-1 NK4H.125W1%+/100PPM464R0 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R16 , -551100FT-1 NK4H.125W1%+/100PPM110R0 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R17, 19, 20, 28, 30, 31


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PDF E1420B E1420B E1420-68006 E1420-68006 wabash relay 1820-3145 1826-0346 RK73H2BT1621F GRM3195C1H102JD01D 5053HD619K0F e1420 Caddell-Burns Manufacturing 1826-0180 tkf 28
2007 - l6599

Abstract: TRANSISTOR BC 814 r46 arcotronics AN2393 L6599 application note AN1792 L6599 application note l6563 200w arcotronics 1uf 450V MKP transistor bc 567 transistor bc 564
Text: voltage regulation. The optocoupler transistor modulates the current from Pin 4, so the frequency will , imposed by these zener diodes plus the VBE of Q10, the transistor Q9 starts conducting and the , Safety Ceramic Disk Capacitor Murata C12 100 nF 50 V 1206 SMD Cercap General Purpose BC , 1206 SMD Cercap General Purpose BC Components C15 100 pF 100 V 0805 SMD Cercap General Purpose BC Components C16 1 µF 25 V 1206 SMD Cercap General Purpose BC Components C17


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PDF AN2393 L6599-based L6563 l6599 TRANSISTOR BC 814 r46 arcotronics AN2393 L6599 application note AN1792 L6599 application note l6563 200w arcotronics 1uf 450V MKP transistor bc 567 transistor bc 564
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