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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor A82 Datasheets Context Search

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2005 - transistor A82

Abstract: No abstract text available
Text: LEVEL OUTPUT: +20 dBm (TYP.) LOW NOISE: 2.8 dB (TYP.) HIGH GAIN: 24.5 dB (TYP.) A82 / SMA82 V3 Product Image Description The A82 RF amplifier is a discrete hybrid design, which uses thin film , Information Part Number A82 SMA82 CA82 Package TO-8 Surface Mount SMA Connectorized Electrical , Parameter Thermal Resistance jc Transistor Power Dissipation Pd Junction Temperature Rise Above Case Tjc , Drawing: TO-8 * A82 / SMA82 V3 WEIGHT: 1 gram (0.04 oz.) max Outline Drawing: Surface Mount


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PDF SMA82 MIL-STD-883 transistor A82
2005 - transistor A82

Abstract: No abstract text available
Text: OUTPUT POWER: +15 dBm (TYP.) HIGH GAIN: 19.0 dB (TYP.) LOW OUTPUT VSWR: 1.1:1 (TYP.) A82 -1/ SMA82-1 V3 Product Image Description The A82 -1 RF amplifier is a discrete hybrid design, which uses , available. Ordering Information Part Number A82 -1 SMA82-1 CA82-1 Package TO-8 Surface Mount SMA , ) Thermal Data: VCC = +15 VDC Parameter Thermal Resistance jc Transistor Power Dissipation Pd Junction , Typical Performance Curves at +25°C Outline Drawing: TO-8 * A82 -1/ SMA82-1 V3 WEIGHT: 1 gram (0.04


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PDF A82-1/ SMA82-1 A82-1 MIL-STD-883 transistor A82
2009 - transistor A82

Abstract: A82-1 CA82-1 SMA82-1 sma82
Text: A82 -1 / SMA82-1 Cascadable Amplifier 20 to 250 MHz Rev. V3 Features · · · · Product , (TYP.) LOW OUTPUT VSWR: 1.1:1 (TYP.) Description The A82 -1 RF amplifier is a discrete hybrid , -883 environmental screening is available. Ordering Information Part Number Package A82 -1 TO-8 SMA82 , / 1.5:1 Transistor Power Dissipation Pd 0.273 W 50 52 54 Junction Temperature Rise , ) or information contained herein without notice. A82 -1 / SMA82-1 Cascadable Amplifier 20 to 250


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PDF A82-1 SMA82-1 MIL-STD-883 transistor A82 CA82-1 SMA82-1 sma82
2009 - transistor A82

Abstract: SMA82 CA82
Text: A82 / SMA82 Cascadable Amplifier 20 to 250 MHz Rev. V3 Features · · · · Product , (TYP.) HIGH GAIN: 24.5 dB (TYP.) Description The A82 RF amplifier is a discrete hybrid design , screening is available. Ordering Information Part Number Package A82 TO-8 SMA82 Surface , / 1.9:1 Transistor Power Dissipation Pd 0.273 W 50 52 54 Junction Temperature Rise , ) or information contained herein without notice. A82 / SMA82 Cascadable Amplifier 20 to 250 MHz


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PDF SMA82 MIL-STD-883 transistor A82 SMA82 CA82
Not Available

Abstract: No abstract text available
Text: ■y/ } rtf, wrr=r< £7 Â whmmmmmv Mm PA2 Series W/TIP-29C (TO-220) TRANSISTOR i , DESCRIPTION OF CURVES A. N.C. Horiz.Device Only Mounted to G-10. B. N.C. Horlz. & Vert. With Dissipator. C. 200 FPM w/Diss. D. 500 FPM w/Diss. E. 1000 FPM w/Dlss. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 POWER , -29C (TO-220) TRANSISTOR r B 1 / 1 / t /c D f / / / A E , ( «.82 ) 1 IERC PART NO. Semiconductor Accommodated Max. Unplated Com'l. Black Anodlze Mil


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PDF /TIP-29C O-220) T0-126, T0-220 T0-127 O-220
Not Available

Abstract: No abstract text available
Text: developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR , Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER , QGD ID = −82 A 21 nC VF(S-D) IF = −82 A, VGS = 0 V 0.96 Reverse Recovery Time trr IF = −82 A, VGS = 0 V, 48 ns Reverse Recovery Charge Qrr di/dt = −100 A/µs , ˆ’20 V −8 V -30 -9 -20 -6 VGS -10 -3 VDS ID = −82 A 0 -1 -10 -100


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2007 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR NP82P04PLF SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION , , 15 nC QGD ID = −82 A 21 nC VF(S-D) IF = −82 A, VGS = 0 V 0.96 Reverse Recovery Time trr IF = −82 A, VGS = 0 V, 48 ns Reverse Recovery Charge Qrr di/dt = â , ˆ’20 V −8 V -30 -9 -6 -20 VGS -3 -10 VDS ID = −82 A 0 -1 -10 0


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2SC3175

Abstract: No abstract text available
Text: SANYO No.1311 2SC3175 NPN Epitaxial Planar Type Silicon Transistor For CRT Horizontal Deflection Output Features : • High switching speed • Especially suited for use in high-definition CRT display(Vcc=12 to 24V) • Wide ASO and durable against breakdown Absolute Maximum Ratings at Ta=25°c Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Peak , INPUT o- IB1 •iL PW=20As Duty Cycled |< 50 .Re -m- ¡82 VR 100u" OUTPUT —O 470 u


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PDF 2SC3175 -10IB2 O-220AB SC-46 5043KI 2SC3175
1996 - A1282 transistor

Abstract: A1712 T8.5000.A348.1000
Text: +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , 17.7 5.5 –.4 –8.2 –22.8 –36.1 –49.4 –63.0 –76.8 –90.9 –105.4 –120.1 â , 22.6 18.5 11.8 4.3 –1.1 141.6 82.0 58.4 37.0 17.7 5.5 –.4 –8.2 –22.8 –36.1 â


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2005 - Not Available

Abstract: No abstract text available
Text: −73 −78 −80 dB min dB min dB typ dB max dB typ dB typ −82 −82 5 18 55 8 −82 −82 5 18 55 8 dB typ dB typ ns typ ps typ MHz typ MHz typ 12 ±1.5 +1/â , dB typ dB typ −82 −82 5 18 74 10 −82 −82 5 18 74 10 dB typ dB typ ns , –80 –82 –84 69.0 VDD = 3.6V –86 04903-012 68.5 68.0 67.5 100 1000


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PDF 12-/10-/8-Bit AD7276/AD7277/AD7278 AD7476 AD7476A EVAL-AD7276CBZ) D04903-0-5/11
2005 - Not Available

Abstract: No abstract text available
Text: −73 −78 −80 dB min dB min dB typ dB max dB typ dB typ −82 −82 5 18 55 8 −82 −82 5 18 55 8 dB typ dB typ ns typ ps typ MHz typ MHz typ 12 ±1.5 +1/â , dB typ dB typ −82 −82 5 18 74 10 −82 −82 5 18 74 10 dB typ dB typ ns , 70.5 2047 VDD = 3V 69.5 VDD = 3V –80 –82 –84 69.0 VDD = 3.6V â


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PDF 12-/10-/8-Bit AD7276/AD7277/AD7278 AD7476 AD7476A EVAL-AD7276CBZ) D04903-0-5/11
2014 - Not Available

Abstract: No abstract text available
Text: voltage is sensed across the transistor , the transistor is switched off. In order to reduce the radiated , defined by the gate−drain capacitance of output transistor and the (limited) current that drives the , forced trough the transistor switch in the reverse direction, i.e. from source to drain, then the transistor is switched on. This ensures that most of the current flows through the channel of the transistor instead of through the inherent parasitic drain−bulk diode of the transistor . Depending on the


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PDF AMIS-30543 30543/D
1995 - A768

Abstract: No abstract text available
Text: θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK , 11.8 –1.1 PHASE DEGREES PHASE DEV 141.6 82.0 58.4 37.0 17.7 5.5 –.4 –8.2 â , 82.0 58.4 37.0 17.7 5.5 –.4 –8.2 –22.8 –36.1 –49.4 –63.0 –76.8 –90.9 â


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PDF 500MHz 5963-2540E A768
2005 - Not Available

Abstract: No abstract text available
Text: 8 Off Isolation −67 −87 −62 −82 200 7 27 6 1 Channel-to-Channel Crosstalk , 24 tOFF 4 Break-Before-Make Time Delay, tD 8 Off Isolation –67 –87 –62 –82 , Transistor Package [SC70] (KS-6) Dimensions shown in millimeters ORDERING GUIDE Model ADG779BKS-R2 , –40°C to +85°C Package Description 6-Lead Thin Shrink Small Outline Transistor Package (SC70) 6-Lead Thin Shrink Small Outline Transistor Package (SC70) 6-Lead Thin Shrink Small Outline


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PDF ADG779 ADG779 C02491â
2004 - Not Available

Abstract: No abstract text available
Text: RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit : mm Simplify circuit design 2 3 0.13±0.05 0.4 1 0.5±0.05 Equivalent Circuit 0.8±0.05 0.4 1.2±0.05 Complementary to RN1130FV 0.8±0.05 Reduce a quantity of parts and manufacturing process , ˆ’1.7 ― −8.2 V Input voltage(OFF) VI(OFF) VCE = −5V, IC =− 0.1mA −1.0 â


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PDF RN2130FV RN1130FV
2001 - D0207

Abstract: No abstract text available
Text: ˆ’62 −82 200 7 27 VDD = 5.5 V Digital inputs = 0 V or 5.5 V 0.001 1.0 1 Guaranteed by , Ω, CL = 5 pF, f = 1 MHz; see Figure 18 Channel-to-Channel Crosstalk –62 –82 200 7 27 , Figure 23. 6-Lead Thin Shrink Small Outline Transistor Package [SC70] (KS-6) Dimensions shown in , Shrink Small Outline Transistor Package [SC70] 6-Lead Thin Shrink Small Outline Transistor Package [SC70] 6-Lead Thin Shrink Small Outline Transistor Package [SC70] Z= RoHS Compliant Part. Branding on


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PDF ADG749 ADG749in ADG749BKSZ-R2 ADG749BKSZ-REEL ADG749BKSZ-REEL7 D02075-0-12/11 D0207
2010 - Not Available

Abstract: No abstract text available
Text: ˆ’62 −82 dB typ dB typ 200 7 27 MHz typ pF typ pF typ 12 6 1 Bandwidth −3 dB , Crosstalk −62 −82 dB typ dB typ Bandwidth −3 dB CS (Off ) CD, CS (On) 200 7 27 , 1.15 0.90 Figure 21. 6-Lead Small Outline Transistor Package [SOT-23] (RJ-6) Dimensions shown in


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PDF OT-23 ADG719-EP OT-23 MO-178-AB 21608-A OT-23] ADG719SRJZ-EP-RL7
Not Available

Abstract: No abstract text available
Text: guaranteed over 0°C to 50°C temperature range. A82 0.200 <5 08) t , I 1 -54° to +85°C 0.165 ±0.015 ' , = 15 Vdc Thermal Resistance 6 jc . 45°C /W Transistor Power


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PDF WJ-A82 SMA82 50-ohm
Not Available

Abstract: No abstract text available
Text: RN47A6 TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor ) RN47A6 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the , −1.7 ⎯ −8.2 V Input voltage (OFF) VI (OFF) VCE = −5 V, IC = −0.1 mA â


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PDF RN47A6 0062g RN1130F RN2130F
TDA 2020 Application

Abstract: TDA 2020 tda 5W TDA2020 tda 1553 amplifier TDA 2010 Circuit TDA 2010 equivalent transistor A92 TDA2020A92 uv616
Text: 150 °C ORDERING NUMBERS: TDA 2020 A82 dual in-line plastic package TDA 2020 A92 quad in-line , ¡—h -r" I I r-i I I I I Irt (OUTPUT TRANSISTOR à , limits. Fig.22- Maximum output current vs. voltage(VCE) across each output transistor 10 ,(V)-i0 , protected power transistor 621 TDA 2020 THERMAL SHUT-DOWIMI The presence of a thermal limiting circuit


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PDF TDA2020 14-lead TDA 2020 Application TDA 2020 tda 5W TDA2020 tda 1553 amplifier TDA 2010 Circuit TDA 2010 equivalent transistor A92 TDA2020A92 uv616
Not Available

Abstract: No abstract text available
Text: RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor ) RN2130MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.22±0.05 Unit : mm Simplify circuit design 1.2±0.05 0.32±0.05 With built-in bias resistors 0.8±0.05 0.4 1 0.4 Complementary to RN1130MFV , ˆ’0.5 mA −0.3 V Input voltage (ON) VI(ON) VCE = −0.2 V, IC = −5 mA −1.7 −8.2


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PDF RN2130MFV RN1130MFV
Not Available

Abstract: No abstract text available
Text: RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor ) RN2130MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.22±0.05 Unit: mm Simplify circuit design 1.2±0.05 0.32±0.05 With built-in bias resistors 0.8±0.05 3 0.13±0.05 0.4 2 0.5±0.05 , ˆ’1.7 ― −8.2 V Input voltage (OFF) VI(OFF) VCE = −5 V, IC =− 0.1 mA −1.0 â


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PDF RN2130MFV RN1130MFV
1994 - Not Available

Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF898/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF898 Designed for 24 Volt UHF large–signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 850–960 MHz. • Motorola , 60 W, 850–960 MHz RF POWER TRANSISTOR NPN SILICON • Specified 24 Volt, 900 MHz , F MHz Zin Ohms ZOL* Ohms 850 11.2 + j2.3 4.0 + j3.9 900 ă8.2 - j1.0 4.4


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PDF MRF898/D MRF898
2000 - 2N3904 A30

Abstract: 2N3904 A52 2N3904 a27 2N3904 B28 Mec R68 2N3904 A41 intel c206 MCH 2N3904 B21 2N3904 a26 intel c202 MCH
Text: .28 3.5.7.2. Suspend-to-RAM Shunt Transistor .28 3.5.8 , .28 Figure 18. RDRAM CMOS Shunt Transistor , . Suspend-to-RAM Shunt Transistor When the Intel® 840 chipset-based systems enter or exit Suspend-to-RAM, power , . This shunting can be accomplished by placing the NPN transistor between the MRHRs and RIMMs as shown in Figure 25. The transistor should have a Cobo of 4 pF or less (i.e., MMBT3904LT1). 28 Design Guide


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PDF
Not Available

Abstract: No abstract text available
Text: metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) • Drain to source , €“6.1 –8.2 –10.2 –12.1 –14.2 –16.3 –18.2 –20.3 –22.3 –24.4 –26.5 –28.9 â


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PDF SGM2014AN SGM2014AN M-281 900MHz
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