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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor A673 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1995 - transistor A673

Abstract: A673 transistor 24ac2 A-1413
Text: +150°C +125°C 300 0 θJC Active Transistor Power Dissipation Junction Temperature Above Case , .576 .560 .550 .546 .535 .523 .513 83.2 21.1 –24.3 –67.3 –97.9 –114.5 â


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PDF 200MHz 5963-2474E transistor A673 A673 transistor 24ac2 A-1413
1996 - TRANSISTOR A1625

Abstract: transistor A673
Text: Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , Ang –6.0 –11.5 –17.5 –23.1 –29.2 –35.7 –42.0 –48.3 –54.7 –61.1 –67.3


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1995 - TRANSISTOR A1625

Abstract: a1625
Text: Characteristics θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , Ang –6.0 –11.5 –17.5 –23.1 –29.2 –35.7 –42.0 –48.3 –54.7 –61.1 –67.3


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PDF 1500MHz 5963-2500E TRANSISTOR A1625 a1625
1998 - Not Available

Abstract: No abstract text available
Text: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , −36.8 −67.3 −92.0 −109.5 −125.4 −140.0 −151.1 −161.5 −172.4 177.0 169.8 , 0.157 0.154 0.150 0.147 −23.4 −39.8 −51.9 −58.7 −61.7 −63.7 −67.3 −71.8 â


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2003 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D091 BLF548 UHF push-pull power MOS transistor Product , UHF push-pull power MOS transistor BLF548 PIN CONFIGURATION FEATURES • High power gain â , transistor is encapsulated in a 4-lead, SOT262A2 balanced flange package, with two ceramic caps. The , 3 Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for , Product specification UHF push-pull power MOS transistor BLF548 LIMITING VALUES In accordance


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PDF M3D091 BLF548 OT262A2 MSB008 SCA75 613524/04/pp15
2003 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D076 BLF544 UHF power MOS transistor Product , UHF power MOS transistor BLF544 PINNING - SOT171A FEATURES • High power gain PIN , D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads , Philips Semiconductors Product specification UHF power MOS transistor BLF544 LIMITING VALUES , Product specification UHF power MOS transistor BLF544 CHARACTERISTICS Tj = 25 °C unless


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PDF M3D076 BLF544 OT171A SCA75 613524/03/pp16
2002 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR µPA873TD NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP , ˆ’51.6 −53.7 −56.0 −58.6 −61.3 −64.3 −67.3 −70.4 −73.6 −76.8 −79.9 −83.0 â , ˆ’56.9 −60.5 −63.8 −67.3 −70.7 −74.3 −77.8 −81.3 −84.9 −88.8 −92.6 −96.5 â , ˆ’51.1 −53.4 −55.9 −58.6 −61.5 −64.3 −67.3 −70.3 −73.2 −76.2 −79.2 −82.4 â


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1997 - Not Available

Abstract: No abstract text available
Text: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It , transistor has been applied ultra super mini mold package. Low Cre : 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = , €“46.5 –48.7 –50.6 –53.4 –55.9 –58.4 –61.1 –63.9 –67.3 –70.6 –74.0 –78.0 â


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2001 - A1309

Abstract: No abstract text available
Text: BFQ81 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 13 581–2 94 9280 2 3 BFQ81 Marking: RA Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = , €“30.3 –35.3 –37.3 –38.7 –40.8 –45.0 –50.4 –54.5 –59.0 –67.3 –76.1 –81.9 â


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PDF BFQ81 BFQ81 D-74025 20-Jan-99 A1309
1997 - nec a1010

Abstract: No abstract text available
Text: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS , €“52.1 –55.7 –60.4 –61.6 –63.8 –64.1 –67.3 –68.6 –71.9 –74.2 –77.3 V CE = 3


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2001 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 4.5 GHz


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2001 - a1069 nec

Abstract: No abstract text available
Text: TRANSISTOR 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS , 0.876 0.859 0.842 0.832 0.818 0.806 0.793 0.785 0.772 0.762 −55.3 −61.5 −67.3 â , 0.394 −47.8 −51.7 −55.2 −58.7 −61.8 −64.6 −67.3 −69.7 −71.4 â


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1997 - Not Available

Abstract: No abstract text available
Text: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR µPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS , €“55.8 –57.4 –58.1 –59.3 –59.8 –61.4 –62.2 –63.3 –63.8 –65.1 –66.2 –67.3 â


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nec a1232

Abstract: No abstract text available
Text: TRANSISTOR µPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 à , €“57.0 –58.2 –58.7 –60.3 –62.0 –65.1 –67.3 –70.4 –72.3 –75.4 –78.5 –84.2 â


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2009 - transistor a2160

Abstract: a2324 a2746 a2530
Text: heterojunction bipolar transistor (HBT) process and has an ESD rating of ±1.5 kV (Class 1C). The device is , ˆ’41.9 −67.3 4.5 dB dB dB dB dBm dBm dBc dBc dB 13.4 ±0.04 ±0.20 ±0.04 16.0 30.7 , -C PKG-003480 0.56 0.36 Figure 21. 3-Lead Small Outline Transistor Package [SOT-89] (RK


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PDF ADL5601 OT-89 ADL5601 O-243 09-12-2013-C PKG-003480 OT-89] ADL5601ARKZ-R7 ADL5601-EVALZ transistor a2160 a2324 a2746 a2530
2001 - Not Available

Abstract: No abstract text available
Text: supply pin, which biases the internal input transistor . This pin should be externally equipped with , The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output transistor , connect an inductor between the Vcc pin (pin 6) and output pin (pin 4). Select , inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of , ˆ’22.8 −28.1 −33.2 −39.0 −45.1 −52.4 −59.8 −67.3 −75.8 −83.9 −93.0 â


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2001 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD , 0.211 0.209 −56.5 −57.9 −59.5 −60.9 −62.5 −64.0 −65.7 −67.3 −69.3 â


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2001 - MARKING A581

Abstract: No abstract text available
Text: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5676 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER , 0.360 0.313 0.280 0.254 0.234 −26.7 −43.4 −52.5 −57.6 −60.8 −63.3 −65.3 −67.3


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2001 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR 2SC5801 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD , ˆ’39.6 −42.4 −45.6 −48.5 −51.6 −54.7 −57.8 −61.0 −64.2 −67.3 2.0 2.1 2.2


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1999 - TV horizontal Deflection Systems

Abstract: TRANSISTOR REPLACEMENT GUIDE an363 TV horizontal Deflection Systems 25 transistor horizontal section tv Horizontal Deflection Switching Transistors TV horizontal Deflection Systems mosfet horizontal section in crt television CRT TV electron gun TV flyback transformer
Text: of the paper is an introduction to the operation of the deflection transistor . The switching times , transistor technologies. The various options that a power transistor designer has are outlined. The transistor characteristics are divided into three areas: (i) edge termination, (ii) the emitter layout and , are mentioned in brief. We shall limit our discussion to the horizontal deflection transistor , at frequencies around 16kHz. The current requirements of the transistor switch varied between 2A


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PDF 16kHz 32kHz, 64kHz, 100kHz. TV horizontal Deflection Systems TRANSISTOR REPLACEMENT GUIDE an363 TV horizontal Deflection Systems 25 transistor horizontal section tv Horizontal Deflection Switching Transistors TV horizontal Deflection Systems mosfet horizontal section in crt television CRT TV electron gun TV flyback transformer
1999 - ADM6315-31D4ARTZR7

Abstract: ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor
Text: STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown , -40°C to +125°C -40°C to +125°C Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline


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PDF OT-143 ADM6315 ADM811 ADM6315 D00081-0-12/11 ADM6315-31D4ARTZR7 ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor
2006 - transistor C 2240

Abstract: ADM6315-44D2ARTZR71 ADM6315-29D2ARTZR71 308 transistor sot143
Text: -Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown in millimeters ORDERING GUIDE , Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline


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PDF OT-143 ADM6315 ADM811 ADM6315 C00081-0-4/06 transistor C 2240 ADM6315-44D2ARTZR71 ADM6315-29D2ARTZR71 308 transistor sot143
1999 - TO-253-AA

Abstract: Small-outline integrated circuit SOT 143 46d1 transistor 143 MDV 1-2 kv SOT-143 308 transistor sot143 ADM6315-46D1ARTRL7 transistor C 2240
Text: JEDEC STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA , 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline


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PDF OT-143 ADM6315 ADM811 OT-143 D00081-0-9/07 TO-253-AA Small-outline integrated circuit SOT 143 46d1 transistor 143 MDV 1-2 kv SOT-143 308 transistor sot143 ADM6315-46D1ARTRL7 transistor C 2240
1999 - Not Available

Abstract: No abstract text available
Text: TO JEDEC STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA , -Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4


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PDF OT-143 ADM6315 ADM811 OT-143 D00081-0-12/11
YG6260

Abstract: YG-6260 toshiba TO-3P AC701
Text: Transistor U tilization Precautions When semiconductors are being used, caution must be exercised , heat sink and minimize transistor stress. (1) Silicone grease A thin, even layer of silicone grease should be applied between the transistor and heat sink to improve thermal resistance. Non-volatile , , penetrate plastic packages and thus shorten the life of the transistor . The base oil of Toshiba Silicone Grease YG6260 does not easily separate and thus does not adversely affect the life of transistor . This


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