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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor A347 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1996 - transistor a338

Abstract: a1792 transistor A347
Text: +115°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above , €“33.8 –34.5 –35.0 –35.2 –34.9 –34.7 –34.6 –34.0 –34.7 S 22 Ang 36.5 16.3


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1996 - Not Available

Abstract: No abstract text available
Text: Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK , €“60.00 S 22 Ang Mag Ang 3.8 –6.3 –15.7 –20.6 –34.7 –53.4 –89.9 –131.8 â


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1995 - agilent 9986

Abstract: No abstract text available
Text: Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , €“60.00 S22 Ang Mag Ang 3.8 –6.3 –15.7 –20.6 –34.7 –53.4 –89.9 –131.8 â


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PDF 500MHz 5963-2543E agilent 9986
1996 - Not Available

Abstract: No abstract text available
Text: +125°C –62 to +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation , €“34.6 –34.6 –34.6 –34.8 –34.6 –34.6 –34.6 –34.7 34.7 –34.8 –34.9 –35.0 â


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1995 - A14129

Abstract: A1252 A2706
Text: Active Transistor Power Dissipation Junction Temperature Above Case Temperature 160°C/W 160 mW 26 , €“4.48 –4.85 –4.79 –3.47 –.68 2.81 4.67 5.60 3.62 — — — — — — — — â


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PDF PPA-6213 PPA-6213 PP-38 5963-3232E. 5963-2593E A14129 A1252 A2706
1996 - A1512

Abstract: transistor a1640
Text: +150°C +100°C RFIN Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , €“22.1 –22.3 –22.5 –23.0 –23.6 –24.3 –25.0 –25.8 –26.9 –28.2 –29.9 –31.9 –34.7


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2003 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D175 BLF404 UHF power MOS transistor Product , UHF power MOS transistor BLF404 PINNING - SOT409A FEATURES • High power gain PIN â , N-channel enhancement mode vertical D-MOS power transistor in an 8-lead SOT409A SMD package with a ceramic , UHF power MOS transistor BLF404 LIMITING VALUES In accordance with the Absolute Maximum Rating , Product specification UHF power MOS transistor BLF404 CHARACTERISTICS Tj = 25 °C unless


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PDF M3D175 BLF404 OT409A MBB072 SCA75 613524/04/pp15
2001 - A1489 TRANSISTOR

Abstract: No abstract text available
Text: BFR93A/BFR93AR/BFR93AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFR93A Marking: +R2 Plastic case (SOT 23) 1 = Collector, 2 = , €“27.1 –30.9 –34.7 –26.4 –26.5 –20.6 –16.0 –17.5 –21.2 –26.6 –30.5 â


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PDF BFR93A/BFR93AR/BFR93AW BFR93A BFR93AR BFR93AW D-74025 20-Jan-99 A1489 TRANSISTOR
2010 - PTFB193404F

Abstract: No abstract text available
Text: 1.20 –3.47 0.72 –1.94 1990 1.20 –3.41 0.72 –1.87 2020 1.19 â , .2KGTR-ND S1 Potentiometer Digi-Key 3224W-202ECT-ND S2 Transistor Digi-Key BCP56-ND, BCP56


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PDF PTFB193404F PTFB193404F 340-watt H-37275-6/2 P03-A,
1997 - Not Available

Abstract: No abstract text available
Text: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It , transistor has been applied ultra super mini mold package. Low Cre : 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = , 7.2 4.1 .9 –2.2 –5.5 –8.8 –12.4 –16.0 –19.6 –23.4 –26.8 –31.2 –34.7 â


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2001 - A1309

Abstract: No abstract text available
Text: BFQ81 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 13 581–2 94 9280 2 3 BFQ81 Marking: RA Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = , €“157.2 –177.0 167.2 157.9 149.4 137.2 127.1 119.9 –34.7 –84.6 –114.5 –146.3 â


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PDF BFQ81 BFQ81 D-74025 20-Jan-99 A1309
2010 - PTFB193404F

Abstract: No abstract text available
Text: –2.01 1960 1.20 –3.47 0.72 –1.94 1990 1.20 –3.41 0.72 â , „¦ Potentiometer Transistor Voltage regulator Capacitor, 0.8 pF Capacitor, 100 µF Capacitor, 4.7 µF ATC


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PDF PTFB193404F PTFB193404F 340-watt
DP7119

Abstract: transistor A347 dp7113 555IC DP7140 DP721 charactristics of cmos logic gates 5SOT-23 marking Potentiometers sot 23-6 Marking Code DP7120
Text: Small Surface Outline Package TDFN: Thin Dual Flat Non-Lead Package SOT-23: Small Outline Transistor , Flat Non-Lead Package Small Outline Transistor Single Chip Latch-Up CMOS , A-347 Specifications are subject to change without notice


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2002 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0 , ˆ’18.8 −34.7 −49.8 −62.9 −76.1 −87.4 −98.0 −108.0 −118.1 −127.1 −135.6 â


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2008 - Not Available

Abstract: No abstract text available
Text: ˆ’3.74 −3.65 −3.58 −3.54 −3.50 −3.47 −3.44 −3.42 −3.40 −3.36 −3.31 −3.24 â , 47. 3−Lead Small Outline Transistor Package [SOT-89] (RK-3) Dimensions shown in millimeters


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PDF ADL5320 OT-89 O-243 09-12-2013-C OT-89] ADL5320ARKZ-R7 ADL5320-EVALZ OT-89,
2008 - Not Available

Abstract: No abstract text available
Text: ˆ’3.74 −3.65 −3.58 −3.54 −3.50 −3.47 −3.44 −3.42 −3.40 −3.36 −3.31 −3.24 â , . 3−Lead Small Outline Transistor Package [SOT-89] (RK-3) Dimensions shown in millimeters


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PDF ADL5320 OT-89 12-18-2008-B OT-89] ADL5320ARKZ-R7 ADL5320-EVALZ OT-89,
2001 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE , 0.848 0.806 0.772 0.745 0.722 0.705 −7.6 −14.5 −20.2 −24.7 −28.4 −31.6 −34.7


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2001 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD , 0.466 0.417 0.375 0.337 −12.2 −24.0 −34.7 −43.6 −51.1 −57.7 −63.8 −69.2 â


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1997 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES PACKAGE , €“10.1 –18.2 –25.1 –34.7 –36.4 –40.6 –44.2 –45.1 –48.1 –51.0 –51.1 –53.1 â


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2012 - BD9483F

Abstract: bd9483 4count
Text: operation of the protection Protect Function DC/DC Gate output Dimming transistor (DIMOUT) logic , €« 150[k]  2.9[V] [V]  46.4 [V]  R2[k] 10[k] ●3.4.7 how to set the interval


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PDF BD9483F bd9483 4count
transistor A562

Abstract: A561 transistor trapatt diode A4 transistor A562 transistor transistor a561 transistor smd marking a73 reverse-conducting thyristor trapatt A5 DIODE
Text: . 20 A.3.45 Transistor , . 20 A.3.47 Impulse waveform , . 20 A.4 TRANSISTOR DEFINITIONS , . 21 A.4.2.2 Unijunction transistor , . 35 B.4.3 Unijunction transistor symbols


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PDF MIL-PRF-19500P MIL-PRF-19500N transistor A562 A561 transistor trapatt diode A4 transistor A562 transistor transistor a561 transistor smd marking a73 reverse-conducting thyristor trapatt A5 DIODE
2012 - Not Available

Abstract: No abstract text available
Text: operation of the protection Protect Function DC/DC Gate output Dimming transistor (DIMOUT) logic , €« 150[k]  2.9[V] [V]  46.4 [V]  R2[k] 10[k] ●3.4.7 how to set the interval


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PDF BD9483F
2012 - BD9488F

Abstract: BD9488
Text: operation of the protection Dimming transistor Soft Start (DIMOUT) logic Protect Function DC/DC , TSZ02201-0F1F0C100040-1-2 11.Jul.2012 Rev.001 Datasheet BD9488F ●3.4.7 . how to set the interval


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PDF BD9488F BD9488F 150kHz BD9488
2012 - Not Available

Abstract: No abstract text available
Text: The operation of the protection Dimming transistor Soft Start (DIMOUT) logic Protect Function , ƒ»15・001 20/38 TSZ02201-0F1F0C100040-1-2 27.May 2014 Rev.003 Datasheet BD9488F ●3.4.7 . how to


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PDF BD9488F BD9488F 150kHz
2001 - Transistor a1488

Abstract: No abstract text available
Text: TRANSISTOR µPA861TD NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS , ) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Low phase distortion transistor suitable for 3 GHz or higher OSC applications fT = 20.0


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