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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor A1267 Datasheets Context Search

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2008 - transistor A1267

Abstract: a1267 A1267 transistor ENA1267 a1267* transistor A1267 data sheet A-1267 a1267* transistor datasheet
Text: EC4H09C Ordering number : ENA1267 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC4H09C UHF to X Band Low-Noise Amplifier and OSC Applications Features · · , . A1267 -1/3 EC4H09C Continued from preceding page. Parameter Symbol 2 S21e 1 2 S21e 2 NF , 1.0 2 3 5 Collector-to-Base Voltage, VCB - V 7 10 IT13899 No. A1267 -2/3 , without notice. PS No. A1267 -3/3 SANYO Electric


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PDF EC4H09C ENA1267 26GHz S21e2 A1267-3/3 transistor A1267 a1267 A1267 transistor ENA1267 a1267* transistor A1267 data sheet A-1267 a1267* transistor datasheet
A1267

Abstract: No abstract text available
Text: EC4H09C Ordering number : ENA1267 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC4H09C UHF to X Band Low-Noise Amplifier and OSC Applications Features â , /network 80608AB TI IM TC-00001513 No. A1267 -1/3 EC4H09C Continued from preceding page. Parameter , , VCB - V 7 10 IT13899 No. A1267 -2/3 EC4H09C 2 ⏐S21e⏐ - IC 20 f T - IC 7 , without notice. PS No. A1267 -3/3 SANYO Electric


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PDF EC4H09C ENA1267 26GHz 15nformation A1267-3/3 A1267
A1267 Y

Abstract: a1267 A-1267 transistor a1267 gr
Text: MCC TM Micro Commercial Components KTA1267-O KTA1267-Y KTA1267-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Excellent hFE Linearity: hFE (0.1mA)/h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199 Marking: A1267 Epoxy meets UL 94 V , Transistor Frequency 80 (VCE=10Vdc, IC=1.0mAdc) Cob Collector Output Capacitance -(VCB=10Vdc, IE =0, f


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PDF KTA1267-O KTA1267-Y KTA1267-GR KTC3199 A1267 O-92S A1267 Y a1267 A-1267 transistor a1267 gr
2007 - transistor A1267

Abstract: A1267 a1267* transistor A1267 transistor transistor a1267 gr KTA1267-Y A-1267 KTA1267GR A1267 Y a1267 gr
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# KTA1267 KTA1267-O KTA1267-Y KTA1267-GR PNP General Purpose Application TO-92S Features · · · Excellent hFE Linearity: hFE (0.1mA)/h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199 x x Case Material: Molded Plastic. Classification Rating 94V-0 Marking: A1267 , Saturation Voltage -(IC=100mAdc, IB =10mAdc) fT Transistor Frequency 80 (VCE=10Vdc, IC=1.0mAdc) Cob


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PDF KTA1267 KTA1267-O KTA1267-Y KTA1267-GR O-92S KTC3199 A1267 transistor A1267 A1267 a1267* transistor A1267 transistor transistor a1267 gr A-1267 KTA1267GR A1267 Y a1267 gr
2008 - A1267

Abstract: transistor A1267 transistor a1267 gr A1267 transistor a1267 gr KTA1267GR KTA1267-GR A1267 Y
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# KTA1267-O KTA1267-Y KTA1267-GR PNP General Purpose Application TO-92S Features · · · · · Excellent hFE Linearity: hFE (0.1mA)/h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199 Marking: A1267 Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 , (IC=100mAdc, IB =10mAdc) fT Transistor Frequency 80 (VCE=10Vdc, IC=1.0mAdc) -Cob Collector Output


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PDF KTA1267-O KTA1267-Y KTA1267-GR O-92S KTC3199 A1267 transistor A1267 transistor a1267 gr A1267 transistor a1267 gr KTA1267GR KTA1267-GR A1267 Y
2008 - KTA1267GR

Abstract: a1267* transistor KTA1267-O
Text: .) Complementary to KTC3199 Marking: A1267 Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level , Transistor Frequency 80 (VCE=10Vdc, IC=1.0mAdc) -Cob Collector Output Capacitance (VCB=10Vdc, IE =0, f


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PDF KTA1267-O KTA1267-Y KTA1267-GR KTC3199 A1267 O-92S KTA1267GR a1267* transistor KTA1267-O
2006 - A1267

Abstract: transistor A1267 A1267 transistor KTA12 a1267* transistor transistor a1267 gr A1267 Y
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# KTA1267 Features · · · Excellent hFE Linearity: hFE (0.1mA)/h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199 x x Case Material: Molded Plastic. Classification Rating 94V-0 Marking: A1267 UL Flammability PNP General Purpose Application TO , =10mAdc) fT Transistor Frequency 80 (VCE=10Vdc, IC=1.0mAdc) Cob Collector Output Capacitance -(VCB


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PDF KTA1267 KTC3199 A1267 O-92S A1267 transistor A1267 A1267 transistor KTA12 a1267* transistor transistor a1267 gr A1267 Y
2008 - transistor A1267

Abstract: A1267 a1267* transistor transistor a1267 gr A1267 transistor a1267 gr KTA1267-Y A1267 Y KTA1267GR A-1267
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# KTA1267-O KTA1267-Y KTA1267-GR PNP General Purpose Application TO-92S B Features · · · · · · · Excellent hFE Linearity: hFE (0.1mA)/h FE (2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.) Complementary to KTC3199 Marking: A1267 Epoxy meets UL 94 V-0 flammability rating Moisture , ) fT Transistor Frequency 80 (VCE=10Vdc, IC=1.0mAdc) -Cob Collector Output Capacitance (VCB=10Vdc, IE


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PDF KTA1267-O KTA1267-Y KTA1267-GR O-92S KTC3199 A1267 transistor A1267 a1267* transistor transistor a1267 gr A1267 transistor a1267 gr A1267 Y KTA1267GR A-1267
1995 - 8 905 958 460

Abstract: No abstract text available
Text: , MHz Thermal Characteristics θJC Active Transistor Power Dissipation Junction Temperature Above , €“47.8 –56.4 –85.0 –73.5 –81.9 –90.5 –99.3 –108.2 –117.3 –126.7 –136.1 â


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PDF 2000MHz 5963-2443E 8 905 958 460
1996 - A706 transistor

Abstract: No abstract text available
Text: +150°C +125°C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction , €“108.2 –117.3 –126.7 –136.1 –145.7 –155.4 –165.1 –174.9 175.3 165.4 155.6 55.0 â


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2005 - A1943

Abstract: A1943 transistor
Text: Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W−CDMA Performance: −42 dBc ACPR, 3.55 GHz, 12 Volts , 44.91 0.030 −12.27 0.609 168.87 1.70 0.903 156.46 2.317 43.49 0.030 −12.67


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PDF MRFG35005MT1 A1943 A1943 transistor
1998 - Not Available

Abstract: No abstract text available
Text: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , ˆ’76.5 −82.0 −90.3 −100.8 −110.5 −118.5 −126.7 Data Sheet PU10103EJ01V0DS S22 5


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2001 - Transistor a1244

Abstract: A827 1307 A1489 TRANSISTOR A1668
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5677 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5677 50 pcs (Non reel) • 8 mm wide embossed taping 2SC5677 , 0.324 0.289 0.270 0.259 0.252 0.248 0.245 −68.4 −98.7 −115.8 −126.7 −134.2 â


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PDF 2SC5677 2SC5677-T3 Transistor a1244 A827 1307 A1489 TRANSISTOR A1668
1999 - TV horizontal Deflection Systems

Abstract: TRANSISTOR REPLACEMENT GUIDE an363 TV horizontal Deflection Systems 25 transistor horizontal section tv Horizontal Deflection Switching Transistors TV horizontal Deflection Systems mosfet horizontal section in crt television CRT TV electron gun TV flyback transformer
Text: of the paper is an introduction to the operation of the deflection transistor . The switching times , transistor technologies. The various options that a power transistor designer has are outlined. The transistor characteristics are divided into three areas: (i) edge termination, (ii) the emitter layout and , are mentioned in brief. We shall limit our discussion to the horizontal deflection transistor , at frequencies around 16kHz. The current requirements of the transistor switch varied between 2A


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PDF 16kHz 32kHz, 64kHz, 100kHz. TV horizontal Deflection Systems TRANSISTOR REPLACEMENT GUIDE an363 TV horizontal Deflection Systems 25 transistor horizontal section tv Horizontal Deflection Switching Transistors TV horizontal Deflection Systems mosfet horizontal section in crt television CRT TV electron gun TV flyback transformer
1999 - ADM6315-31D4ARTZR7

Abstract: ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor
Text: STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown , -40°C to +125°C -40°C to +125°C Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline


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PDF OT-143 ADM6315 ADM811 ADM6315 D00081-0-12/11 ADM6315-31D4ARTZR7 ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor
2006 - transistor C 2240

Abstract: ADM6315-44D2ARTZR71 ADM6315-29D2ARTZR71 308 transistor sot143
Text: -Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown in millimeters ORDERING GUIDE , Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline


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PDF OT-143 ADM6315 ADM811 ADM6315 C00081-0-4/06 transistor C 2240 ADM6315-44D2ARTZR71 ADM6315-29D2ARTZR71 308 transistor sot143
1999 - TO-253-AA

Abstract: Small-outline integrated circuit SOT 143 46d1 transistor 143 MDV 1-2 kv SOT-143 308 transistor sot143 ADM6315-46D1ARTRL7 transistor C 2240
Text: JEDEC STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA , 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline


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PDF OT-143 ADM6315 ADM811 OT-143 D00081-0-9/07 TO-253-AA Small-outline integrated circuit SOT 143 46d1 transistor 143 MDV 1-2 kv SOT-143 308 transistor sot143 ADM6315-46D1ARTRL7 transistor C 2240
1999 - Not Available

Abstract: No abstract text available
Text: TO JEDEC STANDARDS TO-253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA , -Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4


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PDF OT-143 ADM6315 ADM811 OT-143 D00081-0-12/11
YG6260

Abstract: YG-6260 toshiba TO-3P AC701
Text: Transistor U tilization Precautions When semiconductors are being used, caution must be exercised , heat sink and minimize transistor stress. (1) Silicone grease A thin, even layer of silicone grease should be applied between the transistor and heat sink to improve thermal resistance. Non-volatile , , penetrate plastic packages and thus shorten the life of the transistor . The base oil of Toshiba Silicone Grease YG6260 does not easily separate and thus does not adversely affect the life of transistor . This


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1999 - transistor TO Outline Dimensions

Abstract: transistor d 140 g
Text: -253-AA Figure 12. 4-Lead Small Outline Transistor Package [SOT-143] (RA-4) Dimensions shown in millimeters , -40°C to +125°C Package Description 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4-Lead Small Outline Transistor [SOT-143] 4


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PDF OT-143 ADM6315 ADM811 ADM6315 D00081-0-9/13 transistor TO Outline Dimensions transistor d 140 g
2001 - "Phase Discriminator"

Abstract: AM81214-060 AM82731-050 AN569 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study
Text: power microwave transistor . RF power, phase and DC parameters are measured and recorded. Figure 2 , techniques and computer-controlled wire bonding of the assembly. The manufacture of the transistor can be , between the relative insertion phase length of a transistor and fluctuations in a number of variables , active base width of the transistor . - Emitter Ballast Resistance: Sheet resistance of the doped , transistor dice (as many as six single-packaged transistor ) and the accompanying matched MOS capacitors


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PDF AN569 "Phase Discriminator" AM81214-060 AM82731-050 AN569 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study
1999 - TV horizontal Deflection Systems mosfet

Abstract: flyback smps planar TRANSISTOR REPLACEMENT GUIDE dtv32f15 an363 electron gun CRT transistor de 1200v 5a horizontal transistor CRT TV electron gun DTV32F1500A
Text: of the paper is an introduction to the operation of the deflection transistor . The switching times , transistor technologies. The various options that a power transistor designer has are outlined. The transistor characteristics are divided into three areas: (i) edge termination, (ii) the emitter layout and , are mentioned in brief. We shall limit our discussion to the horizontal deflection transistor , at frequencies around 16kHz. The current requirements of the transistor switch varied between 2A


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PDF 16kHz 32kHz, 64kHz, 100kHz. TV horizontal Deflection Systems mosfet flyback smps planar TRANSISTOR REPLACEMENT GUIDE dtv32f15 an363 electron gun CRT transistor de 1200v 5a horizontal transistor CRT TV electron gun DTV32F1500A
bonitron

Abstract: m3775rk M3575T transistor product line manuals VFD for motors resistor bank braking in ac motors vfd motor Application Manual Power Modules "variable frequency drive" circuit
Text: M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · M3775RK Resistive , Modules · M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · M3775RK , · M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · M3775RK , Braking Modules · M3452 Heavy Duty Braking Transistor · M3575T Standard Duty Braking Transistor · , 67hp / 50kW and Above Braking Modules · M3452 Heavy Duty Braking Transistor · M3575T Standard


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2008 - w32 transistor

Abstract: w41 transistor w33 transistor transistor w32 transistor p31 transistor k33 34 ic 4559 transistor 4559 455a transistor k33
Text: Pull-up transistor control bit PU02 Pull-up transistor control bit PU01 Pull-up transistor control bit PU00 Pull-up transistor control bit PU12 Pull-up transistor control bit PU11 Pull-up transistor control bit PU10 Pull-up transistor control bit PU22 Pull-up transistor control bit PU21 Pull-up transistor control bit PU20 Pull-up transistor control bit REC05B0047-0200/Rev.2.00 455A Group at , retained 00002 P23 pull-up transistor OFF P23 pull-up transistor ON P22 pull-up transistor OFF P22


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PDF M3455AG8FP M3455AG8-XXXFP) M34559G6FP M34559G6-XXXFP) M3455AGCFP M3455AGC-XXXFP) REC05B0047-0200/Rev w32 transistor w41 transistor w33 transistor transistor w32 transistor p31 transistor k33 34 ic 4559 transistor 4559 455a transistor k33
2006 - Buck-Boost Converter advantages

Abstract: SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
Text: topology and switching transistor * Only available in ISODRAIN package 8 PWM+CCM PFC CoolSET TM , Power Supplies SMPS Controller with very few peripheral components, using MOS Transistor , magnetic coupling C Cheap solution Disadvantages C Power transistor drain-source voltage VDS = VO > VI , , ICE3DS01 Forward Converter Single Transistor Forward Converter Single-ended Forward Converter Advantages C Demagnetizing the core is no problem C Simple circuitry Disadvantages C Power transistor


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PDF B152-H8202-G4-X-7600 Buck-Boost Converter advantages SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
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