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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor A114 Datasheets Context Search

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2002 - 39SF512

Abstract: 39vf020 39SF010 37vf040 39VF512 39VF010 A114 transistor 39VF040 transistor A114 27SF020
Text: nonvolatile memories is a floating gate memory transistor . Details of the memory cell operation are included , THBS. ESD Specs: SST uses both the human body model based on JEDEC Test Method A114 , Electrostatic , Stress JEDEC A114 100 pF 1500 ohms 2000 V Electrostatic Discharge Machine Model JEDEC A115 , Electrostatic Discharge Human Body Model JEDEC A114 100 pF 1500 ohms 2000 V Electrostatic Discharge , Stress Method Results Electrostatic Discharge Human Body Model JEDEC A114 100 pF 1500 ohms


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PDF ISO-9001 S72023-00-000 SF3-33A 39VF040/39VF020/39VF010/39VF512 39SF512 39vf020 39SF010 37vf040 39VF512 39VF010 A114 transistor 39VF040 transistor A114 27SF020
2009 - Not Available

Abstract: No abstract text available
Text: PBSS301PZ 12 V, 5.7 A PNP low VCEsat (BISS) transistor Rev. 02 — 17 November 2009 Product , (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN , ‰¤ 0.02. [1] Unit - −12 V - −5.7 A - collector current Max - −11.4 , ) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 , (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute


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PDF PBSS301PZ OT223 SC-73) PBSS301NZ. PBSS301PZ
CQY54A

Abstract: CQY54 TEA5580
Text: ) -l2 195 275 390 ixA Output current (pin 3) 50 mA (LED driver transistor ) "'3 — — Switch , = 67 kHz (note 8) «67 - 80 — dB ACI rejection (note 9) f= 114 kHz «114 - 90 — dB f = , J V 9. ACI (Adjacent Channel Interference) rejection at: vo(siqnal) (at 1 kHz> «114 =


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PDF TEA5580 TEA5580 CQY54A CQY54
2000 - TRANSISTOR A107

Abstract: transistor A143 Transistor A119 TRANSISTOR A117 A124 transistor transistor a124 A124
Text: Transistor MRF6522-5R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A and Class AB , ARCHIVED 2005 –114 S12 φ |S11| 0.786 2 |S22| 0.711 –100 0.785 â , –83 0.550 0.841 –114 5.98 88 0.046 5 0.724 –85 0.575 0.838 , 59 0.035 –16 0.652 –114 0.900 0.803 –149 4.77 58 0.034 â , 0.808 –151 4.76 56 0.032 –17 0.647 –114 0.925 0.808 –152 4.62


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PDF MRF6522â MRF6522-5R1 TRANSISTOR A107 transistor A143 Transistor A119 TRANSISTOR A117 A124 transistor transistor a124 A124
2011 - Not Available

Abstract: No abstract text available
Text: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • â , =2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101 D S G SOT-23 Marking , www.fairchildsemi.com 1 2N7002K — N-Channel Enhancement Mode Field Effect Transistor January 2012 Symbol , 2 2N7002K — N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics , www.fairchildsemi.com 3 2N7002K — N-Channel Enhancement Mode Field Effect Transistor Typical Performance


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PDF 2N7002K JESD22 OT-23
2010 - transistor A114

Abstract: A114 transistor 2N7002K transistor a114 esd 2N7002K TRANSISTOR JESD22 C101 A114 transistor C101 transistor 2N7002K
Text: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features · · · · · · · · , ) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101 D S G SOT-23 Marking : 7K , 2N7002K - N-Channel Enhancement Mode Field Effect Transistor March 2010 Symbol TA = 25°C unless , N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics Figure 1. On-Region , Mode Field Effect Transistor Typical Performance Characteristics 2N7002K - N-Channel


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PDF 2N7002K JESD22 OT-23 transistor A114 A114 transistor 2N7002K transistor a114 esd 2N7002K TRANSISTOR C101 A114 transistor C101 transistor 2N7002K
2009 - transistor a114 esd

Abstract: TRANSISTOR A114 A114 transistor 2n7002k
Text: 2N7002K - N-Channel Enhancement Mode Field Effect Transistor August 2009 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features · · · · · · · · Low On-Resistance Low Gate Threshold , Package Pb Free/RoHS Compliant ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per , Field Effect Transistor Electrical Characteristics Symbol BVDSS IDSS IGSS VGS(th) TA = 25 , Transistor Typical Performance Characteristics Figure 1. On-Region Characteristics 2.0 Figure 2


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PDF 2N7002K 2N7002K JESD22 OT-23 transistor a114 esd TRANSISTOR A114 A114 transistor
2011 - transistor A114

Abstract: a114 transistor transistor a114 esd 2N7002KW
Text: 2N7002KW - N-Channel Enhancement Mode Field Effect Transistor May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features · · · · · · · · Low On-Resistance Low Gate Threshold , Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101 D , Rev. A0 1 www.fairchildsemi.com 2N7002KW - N-Channel Enhancement Mode Field Effect Transistor , 2N7002KW - N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics


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PDF 2N7002KW 2N7002KW JESD22 OT-323 transistor A114 a114 transistor transistor a114 esd
2013 - Not Available

Abstract: No abstract text available
Text: T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • â , notice www.triquint.com T2G6003028-FL 30W, 28V DC – 6 GHz, GaN RF Power Transistor Absolute , Transistor RF Characterization – Performance at 5.6 GHz (1, 2) Test conditions unless otherwise noted: TA , Transistor Thermal and Reliability Information Parameter Test Conditions Thermal Resistance (θJC , Transistor Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits when placed in


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PDF T2G6003028-FL T2G6003028-FL JESD22-A114 2002/95/EC C15H12Br402) J-STD-020. EAR99
2011 - transistor A114

Abstract: 2n7002k transistor a114 esd
Text: 2N7002K - N-Channel Enhancement Mode Field Effect Transistor January 2012 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features · · · · · · · · Low On-Resistance Low Gate Threshold , Package Pb Free/RoHS Compliant ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per , Field Effect Transistor Electrical Characteristics Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON , www.fairchildsemi.com 2N7002K - N-Channel Enhancement Mode Field Effect Transistor Typical Performance


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PDF 2N7002K 2N7002K JESD22 OT-23 transistor A114 transistor a114 esd
2005 - transistor A114

Abstract: transistor a114 diagram A114 transistor transistor a115
Text: Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD2000V includes Source plated , Class 1A (> 250V but < 500V) using JESD22 A114 , Human Body Model, and to Class A, (< 200V) using JESD22


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PDF FPD2000V FPD2000V transistor A114 transistor a114 diagram A114 transistor transistor a115
tip 410 transistor

Abstract: transistor TIP 662 P6020 transistor BD 253 P6019 texasinstruments BU105 bu 105 transistor 2N 5684 TRANSISTOR bd 108
Text: BU 105 NPN SILICON POWER TRANSISTOR DESIGNED FOR HIGH VOLTAGE C.R.T.SCANNING • Vces Rating 1500 V • Current Rating - 2.5 Amps Peak • Fast Switching - tp at 2 Amps 0.6 Microsecond Typical , data may be published at a later date. Texas Instruments 2-113 BU 105 NPN SILICON POWER TRANSISTOR , than 20 ns h-ts —I M k Current Waveforms of Iç and lg ■114 Texas Instruments BU 105 NPN SILICON POWER TRANSISTOR FORWARD BIASED SAFE AREA OF OPERATION, D.C. CASE TEMPE RATURE >90 °C


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2008 - FPD1500

Abstract: transistor A114 FPD1500 SOT89
Text: FPD1500 Datasheet v3.0 1W POWER PHEMT LAYOUT: FEATURES: · · · · · 29 dBm Linear Output Power at 12 GHz 9 dB Power Gain at 12 GHz 12.5 dB Max Stable Gain at 12 GHz 41 dBm Output IP3 35% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 1500 µm Schottky barrier , Class 0 (0-0 V) as defined in JEDEC Standard No. 22- A114 . Further information on ESD control measures


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PDF FPD1500 FPD1500 22-A114. MIL-STD-1686 MILHDBK-263. transistor A114 FPD1500 SOT89
2008 - FPD750

Abstract: transistor A114
Text: FPD750 Datasheet v3.0 0.5W POWER PHEMT FEATURES: · · · · · LAYOUT: 27.5 dBm Linear Output Power at 12 GHz 11.5 dB Power Gain at 12 GHz 14.5 dB Max Stable Gain at 12 GHz 38 dBm Output IP3 50% Power-Added Efficiency GENERAL DESCRIPTION: The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier , should be treated as Class 0 (0-250 V) as defined in JEDEC Standard No. 22- A114 . Further information on


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PDF FPD750 FPD750 OT343all 22-A114. MIL-STD-1686 MILHDBK-263. transistor A114
transistor a114 diagram

Abstract: A114 A115 FPD1000V JESD22 transistor A114 transistor a115
Text: Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD1000V includes , Class 1A (> 250V but < 500V) using JESD22 A114 , Human Body Model, and to Class A, (< 200V) using JESD22


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PDF FPD1000V FPD1000V transistor a114 diagram A114 A115 JESD22 transistor A114 transistor a115
2005 - transistor A114

Abstract: A114 A115 FPD1000V JESD22 A114 transistor
Text: Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD1000V includes , Class 1A (> 250V but < 500V) using JESD22 A114 , Human Body Model, and to Class A, (< 200V) using JESD22


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PDF FPD1000V FPD1000V transistor A114 A114 A115 JESD22 A114 transistor
Transistor p1f

Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F JESD22 FPD4000AS FPD1000AS P1F transistor
Text: AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications , ) using JESD22 A114 , Human Body Model, and to Class A, (< 200V) using JESD22 A115, Machine Model


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PDF FPD4000AS FPD4000AS 200mA Transistor p1f MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F JESD22 FPD1000AS P1F transistor
2008 - Filtronic* FPD6836

Abstract: FPD6836 transistor A114
Text: FPD6836 Datasheet v3.0 0.25W POWER PHEMT FEATURES: · · · · · · LAYOUT: 25.5 dBm Output Power (P1dB) 10 dB Power Gain at 12 GHz 16.5 dB Max Stable Gain at 12 GHz 12 dB Maximum Stable Gain at 24 GHz 50% Power-Added Efficiency 8V Operation GENERAL DESCRIPTION: The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 360 , testing. These devices should be treated as Class 0 (0-250 V) as defined in JEDEC Standard No. 22- A114


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PDF FPD6836 22-A114. MIL-STD-1686 MILHDBK-263. Filtronic* FPD6836 FPD6836 transistor A114
A114

Abstract: A115 FPD2000V JESD22 Au Sn eutectic
Text: Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD2000V includes , (> 250V but < 500V) using JESD22 A114 , Human Body Model, and to Class A, (< 200V) using JESD22 A115


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PDF FPD2000V FPD2000V A114 A115 JESD22 Au Sn eutectic
2005 - A114

Abstract: A115 FPD4000V JESD22
Text: Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD4000V includes , (> 250V but < 500V) using JESD22 A114 , Human Body Model, and to Class A, (< 200V) using JESD22 A115


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PDF FPD4000V FPD4000V A114 A115 JESD22
2005 - UM3750

Abstract: A114 A115 FPD10000V JESD22 wedge Filtronic
Text: Electron Mobility Transistor (pHEMT), optimized for WiMAX (WMAN) IEEE 802.16 power amplifiers. The device , Class 1A (> 250V but < 500V) using JESD22 A114 , Human Body Model, and to Class A, (< 200V) using JESD22


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PDF FPD10000V FPD10000V UM3750 A114 A115 JESD22 wedge Filtronic
2008 - FPD2250

Abstract: PAD130
Text: FPD2250 Datasheet v3.0 1.5W POWER PHEMT LAYOUT: FEATURES: · · · · 32 dBm Linear Output Power at 12 GHz 7.5 dB Power Gain at 12 GHz 42 dBm Output IP3 45% Power-Added Efficiency GENERAL DESCRIPTION: The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 2250 µm Schottky barrier gate, defined by high -resolution , testing. These devices should be treated as Class 0 (0-250 V) as defined in JEDEC Standard No. 22- A114


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PDF FPD2250 FPD2250 22-A114. MIL-STD-1686 MILHDBK-263. PAD130
2008 - transistor A114

Abstract: FPD1050
Text: FPD1050 Datasheet v3.0 0.75W POWER PHEMT LAYOUT: FEATURES: · · · · · 28.5 dBm Linear O/p Power at 12 GHz 11 dB Power Gain at 12 GHz 14 dB Maximum Stable Gain at 12 GHz 41 dBm Output IP3 45% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 1050 µm Schottky barrier , testing. These devices should be treated as Class 0 (0-250 V) as defined in JEDEC Standard No. 22- A114


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PDF FPD1050 FPD1050 22-A114. MIL-STD-1686 MILHDBK-263. transistor A114
2008 - FPD3000

Abstract: transistor A114
Text: FPD3000 Datasheet v3.0 2W POWER PHEMT LAYOUT: FEATURES: · · · · · 32.5 dBm Linear O/p Power at 12 GHz 6.5 dB Power Gain at 12 GHz 8 dB Maximum Stable Gain at 12 GHz 42 dBm Output IP3 30% Power-Added Efficiency GENERAL DESCRIPTION: The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier , testing. These devices should be treated as Class 0 (0-250 V) as defined in JEDEC Standard No. 22- A114


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PDF FPD3000 FPD3000 22-A114. MIL-STD-1686 MILHDBK-263. transistor A114
2006 - TRANSISTOR A114 E

Abstract: FPD1050SOT89 FPD1050SOT89E MIL-HDBK-263
Text: mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x , V) as defined in JEDEC Standard No. 22- A114 . Further information on ESD control measures can be


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PDF FPD1050SOT89 FPD1050SOT89E: 2002/95/EC) FPD1050SOT89 MIL-STD-1686 MIL-HDBK-263. FPD1050SOT89E TRANSISTOR A114 E FPD1050SOT89E MIL-HDBK-263
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