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Part Manufacturer Description Datasheet Download Buy Part
DC327A Linear Technology 3.3V Micropower EIA/TIA-562 Transceiver
LTC1385CSW Linear Technology LTC1385 - 3.3V Low Power EIA/TIA-562 Transceiver; Package: SO; Pins: 18; Temperature Range: 0°C to 70°C
LTC1385CSW#TR Linear Technology LTC1385 - 3.3V Low Power EIA/TIA-562 Transceiver; Package: SO; Pins: 18; Temperature Range: 0°C to 70°C
LTC1385ISW Linear Technology LTC1385 - 3.3V Low Power EIA/TIA-562 Transceiver; Package: SO; Pins: 18; Temperature Range: -40°C to 85°C
LTC1385ISW#TR Linear Technology LTC1385 - 3.3V Low Power EIA/TIA-562 Transceiver; Package: SO; Pins: 18; Temperature Range: -40°C to 85°C
LTC1385CSW#PBF Linear Technology LTC1385 - 3.3V Low Power EIA/TIA-562 Transceiver; Package: SO; Pins: 18; Temperature Range: 0°C to 70°C

transistor A 562 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - LM117 DIE

Abstract: LA 2910 LM117 SVR1086-12M
Text: View Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562 ) 404-1773 ssdi@ssdi-power.com , -_ SVR1086-2.85 SVR1086-3.3, -3.6, & -5 SVR1086-12 Control Section Power Transistor Storage , , INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562 ) 404-1773 , * * ILIMIT 1.50 0.05 2.00 0.15 2.80 - A A (ªV = 25V) * ILOAD - 5 10 A , Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562 ) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com


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PDF SVR1086-2 SVR1086-12M, 12Volts SVR1086 O-254 O-254Z LCC20 LM117 DIE LA 2910 LM117 SVR1086-12M
reflective sensor ir modulated 1"

Abstract: LED Reflective Optical Sensor OTM930 Reflective Optical Sensor with Transistor Output
Text: . Refer to Figure 2 (Outboard Driver) for details. Be sure to use a PNP transistor that can adequately , transistor collector current. OPTO TECHNOLOGY, INC. 562 Chaddick Drive, Wheeling, IL 60090 Phone: (847 , 880nm infrared LED and a modulated photo integrated detector combined into an industry standard package. Only a single external resistor is required for operation. The detector consists of a built-in , conditions. The standard device includes a 16 inch cable with a seven (7) pin insulation displacement


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PDF OTM930 OTM930 880nm reflective sensor ir modulated 1" LED Reflective Optical Sensor Reflective Optical Sensor with Transistor Output
2000 - DSA-001

Abstract: LM396 lm396 high voltage regulator DS-A001 p75w dsa001 SVR1038N LM138 LM117 SSDIP
Text: PRELIMINARY SVR1038N, P, B, & A SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562 ) 404-1773 10 Amps ADJUSTABLE LINEAR VOLTAGE , Straight DB = Down Bend UB = Up Bend Package: 4/ N = TO-254 P = TO-254Z B = MilPack II A = MilPack , Transistor Storage Temperature TO-259 (P): NOTE: All specifications are subject to change without , TO +150 o MilPack II (B): MilPack III ( A ): DATA SHEET #: SVR0003A UNITS V C C


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PDF SVR1038N, SVR1038 O-254 O-254Z O-259 O-258 DSA-001 LM396 lm396 high voltage regulator DS-A001 p75w dsa001 SVR1038N LM138 LM117 SSDIP
2000 - DSA-001

Abstract: dsa001 D2 Pack lm117 3.3V LM117 SVR1085-12M voltage regulator, 0 to 48V, 0 to 15 amps DS-A001
Text: , INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562 ) 404-1773 1.5 , Power Transistor ªVIN/OUT TO-254 (Z): NOTE: All specifications are subject to change without , , Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562 ) 404-1773 Electrical Characteristics MIN TYP , 3.2 3.2 4.0 0.05 4.0 4.0 4.0 4.0 - A A A A A A ªV = 25V * ILOAD - 5 10 A (VIN = 18V) (VIN = 18V) (VIN = 20V) (VIN = 25V) * * * * IQ -


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PDF SVR1085-3 SVR1085-12M, 12Volts SVR1085 O-254 O-254Z DSA-001 dsa001 D2 Pack lm117 3.3V LM117 SVR1085-12M voltage regulator, 0 to 48V, 0 to 15 amps DS-A001
LA 2910

Abstract: D2 Pack dsa001
Text: PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562 ) 404-1773 SVR1086-2.85M, Z, D2, & D3 thru SVR1086-12M, Z, D2, & D3 1.5 Amps 2.85 , Section Power Transistor SYMBOL PD VIN VALUE Internally Limited 30 15 18 20 25 -55 TO +150 -55 TO , View Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562 ) 404-1773 to (10mA # IOUT #1.5A , % mV mV mV mV mV mV mV mV mV mV % % mV mV mV mV mV mV mV mV mV mV V A A A mA mA mA mA mA SVR1086


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PDF SVR1086-2 SVR1086-12M, 12Volts LM117 SVR1085 150oC SVR1086 O-254 LA 2910 D2 Pack dsa001
transistor A 562

Abstract: To334 zener 562 TR0-010 SPT165 transistor 562
Text: PRELIMINARY SPT165 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562 ) 404-1773 DESIGNER'S DATA SHEET 10 mA 45 VOLTS NPN (VREF) TRANSISTOR FEATURES: · · · · · · · BVCEO 45V. Very Low Leakage. High Gain. Stable Reference , , INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562 ) 404-1773 , Current (VCB = 30VDC) ICBO - 1 : A DC Current Gain* (IC = 500:ADC, VCE = 3VDC) HFE


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PDF SPT165 150oC 150oC TR0010A 30VDC) 300us, transistor A 562 To334 zener 562 TR0-010 SPT165 transistor 562
2002 - Not Available

Abstract: No abstract text available
Text: SFT5094/5 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562 ) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER'S DATA SHEET FEATURES , Complimentary Use with SFT5015. 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR TO-5 MAXIMUM RATINGS , +200 50 UNIT V V V A A W mW/oC o TOP & TSTG R JC C o C/W NOTE: All specifications , Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562 ) 404-1773 ssdi@ssdi-power.com


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PDF SFT5094/5 200oC SFT5015. 100oC 10MHz 100mA
2004 - Not Available

Abstract: No abstract text available
Text: SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562 ) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT5094/5 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR TO-5 DESIGNER'S DATA SHEET FEATURES: · BVCER to 600V. · Low Leakage at High Temperature · High , R JC VALUE 400 600 600 6 1.0 0.5 1.0 0.4 5.7 -65 to +200 30 UNIT V V V A A W mW/oC o C , STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562


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PDF SFT5094/5 200oC SFT5015. 2N5094 100oC 10MHz 100mA
2004 - Not Available

Abstract: No abstract text available
Text: SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562 ) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT5094-4 and SFT5096-4 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR 4 PIN CLCC DESIGNER'S DATA SHEET FEATURES: · BVCER to 600V. · Low , TC = 25oC TA = 25oC PD TOP & TSTG R JC R JA SFT5094 400 600 SFT5096 450 600 UNIT V V V A A W , . 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562 ) 404-1773


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PDF SFT5094-4 SFT5096-4 200oC SFT5015. 100mA; 100oC 10MHz 100mA
2006 - transistor smd 22

Abstract: SMD Transistor 070 R "PNP Transistor" SMD SFT5096S transistor smd
Text: SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562 ) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT5094S.22 and SFT5096S.22 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR SMD.22 (S.22) DESIGNER'S DATA SHEET FEATURES: · BVCER 600V minimum. · , V A A W mW/oC o 600 6 1.0 0.5 1.0 0.4 5.7 -65 to +200 9 440 .065±.010 TOP & TSTG R JC R JA , STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562


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PDF SFT5094S SFT5096S 200oC SFT5015. 100mA; 100oC 10MHz 100mA transistor smd 22 SMD Transistor 070 R "PNP Transistor" SMD transistor smd
1993 - Uart applications

Abstract: MAX563 MAX563CPN MAX563CWN
Text: 19-0198; Rev 0; 10/93 +3.3V-Powered, EIA/TIA- 562 Dual Transceiver with Receivers Active in Shutdown The MAX563 is a +3.3V-powered EIA/TIA- 562 transceiver with two transmitters and two receivers , guarantees a 116kbps data rate while maintaining ±3.7V EIA/TIA- 562 signal levels, which makes it compatible , produce the EIA/TIA- 562 output voltage levels. Four 0.1µF charge-pump capacitors and a bypass capacitor , levels. With a VCC supply of only 3.0V, the driver outputs deliver the EIA/TIA- 562 ±3.7V minimum


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PDF EIA/TIA-562 MAX563 RS-232 116kbps Uart applications MAX563CPN MAX563CWN
2002 - Not Available

Abstract: No abstract text available
Text: SFT5094-4 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562 ) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: ⠀¢ BVCER to 600V. ⠀¢ Low Leakage at High Temperature ⠀¢ High Linear Gain, Low Saturation Voltage. ⠀¢ 200oC Operating, Gold Eutectic Die Attach. ⠀¢ Available Screening TX, TXV, or S Level. ⠀¢ Designed for Complimentary Use with SFT5015. 4 PIN CLCC


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PDF SFT5094-4 200oC SFT5015. 100oC 100mA; 10MHz 100mA
1993 - Not Available

Abstract: No abstract text available
Text: 19-0198; Rev 0; 10/93 +3.3V-Powered, EIA/TIA- 562 Dual Transceiver with Receivers Active in Shutdown _General Description The MAX563 is a +3.3V-powered EIA/TIA- 562 transceiver with two transmitters and two receivers. Because it implements the EIA/TIA- 562 standard, the MAX563 , , hand-held computers. And, the MAX563 guarantees a 116kbps data rate while maintaining ±3.7V EIA/TIA- 562 , levels. With a VCC supply of only 3.0V, the driver outputs deliver the EIA/TIA- 562 ±3.7V minimum


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PDF EIA/TIA-562 MAX563 RS-232 116kbps
1996 - DMILL

Abstract: RAD HARD TRENCH TRANSISTOR HEP transistors BPSG jfet n channel ultra low noise temic jfet nuclear 1E14 hep silicon diode Neutron Radiation Detector
Text: available. For fast-low noise analog applications, there is a NPN bipolar transistor with a typical gain , Threshold voltage for 25/0.8 P transistor IDSN (0.8) 7.5 mA Drain current of a 25/0.8 N Transistor with VGS=VDS=5.0V IDSP (0.8) 4.25 mA Drain current of a 25/0.8 P Transistor with , signal to noise ratios. To meet these new requirements, the French Commissariat à l'Energie Atomique , , developed the DMILL technology (Durci Mixte Isolant Logico Linéaire), a mixed analog/digital technology


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PDF 10MRAD D-85386 I-20157 DMILL RAD HARD TRENCH TRANSISTOR HEP transistors BPSG jfet n channel ultra low noise temic jfet nuclear 1E14 hep silicon diode Neutron Radiation Detector
1997 - NEC 2403

Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Text: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier. 2.1 ± 0.1 It is suitable for a high density surface mount assembly since the 1.25 ± 0.1 · Low Noise NF = 1.4 dB TYP , = 3 V, IC = 7 mA 0.3 +0.1 ­0 FEATURES 2.0 ± 0.2 +0.1 0.3 ­0 0.65 0.65 transistor has


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PDF 2SC4227 2SC4227 SC-70 2SC4227-T1 NEC 2403 3181 R33 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
CQ 523

Abstract: cq 531 mc 5357 Z0 607 2SC5245 cq 765 transistor but 607 s22L FC157 NPN/CQ 523
Text: Ordering number: EN5433 _FC157 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications Features ⠖ Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. ⠖ The FC157 is formed with two chips, each being equivalent to the 2SC5245, placed in one package. ⠀¢ Excellent in , :10mA 0.7 0.95 Base-to-Emitter Voltage VßE (large-small) Vqe ⠀” 5V,IC = :10mA 1.0 mV .


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PDF EN5433 FC157 FC157 2SC5245, CQ 523 cq 531 mc 5357 Z0 607 2SC5245 cq 765 transistor but 607 s22L NPN/CQ 523
2002 - Not Available

Abstract: No abstract text available
Text: SFT5094-4 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855 * Fax: ( 562 ) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER'S DATA SHEET FEATURES , Complimentary Use with SFT5015. 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR 4 PIN CLCC MAXIMUM RATINGS , 25oC PD VALUE 400 600 600 6 1.0 0.5 1.0 0.4 5.7 -65 to +200 175 440 UNIT V V V A A W mW/oC o , SFT5094-4 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: ( 562 ) 404-7855


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PDF SFT5094-4 200oC SFT5015. 100oC 10MHz 100mA
transistor NEC D 587

Abstract: 3181 R33 transistor c 3181
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. PACKAGE DIMENSIONS in millimeters 2.1 ± 0.1 , P u b lish e d J u ly 1995 P P rinted in J a p a n © NEC Corporation 1993 NEC ABSOLUTE


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PDF 2SC4227 2SC4227 SC-70 2SC4227-T1 transistor NEC D 587 3181 R33 transistor c 3181
1998 - transistor A 564

Abstract: two 2sc2412k A 564 transistor transistor 564 imx1 transistor A 562 imx1 2SC2412K UMx1 2SC2412K NPN Silicon Epitaxial Planar Transistor
Text: Transistors General purpose transistor (dual transistors) UMX1N / IMX1 FFeatures 1) Two 2SC2412K chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can , silicon transistor The following characteristics apply to both Tr1 and Tr2. FAbsolute maximum ratings (Ta = 25_C) (96-503-C22) 562 Transistors UMX1N / IMX1 FElectrical characteristics (Ta


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PDF 2SC2412K 96-503-C22) transistor A 564 two 2sc2412k A 564 transistor transistor 564 imx1 transistor A 562 imx1 2SC2412K UMx1 NPN Silicon Epitaxial Planar Transistor
2011 - T0800EB

Abstract: 2008AN01 T0800 transistor P1 P 12 T0800EB45G MAR 208 transistor
Text: Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE , LIMITS UNITS RATINGS IC(DC) Continuous DC collector current, IGBT 800 A ICRM Repetitive peak collector current, tp=1ms, IGBT 1600 A IF(DC) Continuous DC forward current, Diode 800 A IFRM Repetitive peak forward current, tp=1ms, Diode 1600 A IFSM Peak , (di/dt)cr Critical diode di/dt (note 3) 2000 A /µs Tj Operating temperature range


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PDF T0800EB45G T0800EB45G T0800EB 2008AN01 T0800 transistor P1 P 12 MAR 208 transistor
2010 - T0340VB

Abstract: d686* transistor transistor c 2060 T0340VB45G 2008AN01 Westcode Semiconductors transistor 2060A D-68623 westcode igbt
Text: Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE , LIMITS UNITS RATINGS IC(DC) Continuous DC collector current, IGBT 340 A ICRM Repetitive peak collector current, tp=1ms, IGBT 680 A IF(DC) Continuous DC forward current, Diode 340 A IFRM Repetitive peak forward current, tp=1ms, Diode 680 A IFSM Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) 2060 A IFSM2 Peak non-repetitive surge tp


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PDF T0340VB45G T0340VB45G T0340VB d686* transistor transistor c 2060 2008AN01 Westcode Semiconductors transistor 2060A D-68623 westcode igbt
T1600GB45G

Abstract: T1600 IC 7418 datasheet transistor polar D-68623 ixys application note igbt 3 KA transistor 1GE
Text: Insulated Gate Bi-Polar Transistor Type T1600GB45G Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE , LIMITS UNITS RATINGS IC(DC) Continuous DC collector current, IGBT 1600 A ICRM Repetitive peak collector current, tp=1ms, IGBT 3200 A IF(DC) Continuous DC forward current, Diode 1600 A IFRM Repetitive peak forward current, tp=1ms, Diode 3200 A IFSM , (Note 2) 11.7 kW (di/dt)cr Critical diode di/dt (note 3) 2800 A /µs Tj Operating


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PDF T1600GB45G T1600GB45G T1600 IC 7418 datasheet transistor polar D-68623 ixys application note igbt 3 KA transistor 1GE
LM35 internal Block Diagram

Abstract: LM35 lm35 application note lm35 Resistance Table TRANSISTOR LM35 human body temperature sensor lm35 LM35 application LM35 Block Diagram sensor LM35 lm35 circuit diagram
Text: sensors calibrated in ° Kelvin, as the user is not required to subtract a large constant voltage from , calibration or trimming to provide typical accuracies of ± 1/4°C at room temperature and ± 3/4°C over a full , °C in still air. The LM35 is rated to operate over a -55° to +150°C temperature range, while the LM35C is rated for a -40° to +110°C range (-10° with improved accuracy). The LM35 series is available pack- aged in hermetic TO-46 transistor packages, while the LM35C, LM35CA, and LM35D are also available in


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LM35 internal Block Diagram

Abstract: DS005516-4 TRANSISTOR LM35 lm35 application note sensor LM35 lm35 table LM35 application LM35 LM35 Block Diagram LM35 sensor
Text: sensors calibrated in ° Kelvin, as the user is not required to subtract a large constant voltage from , calibration or trimming to provide typical accuracies of ± 1/4°C at room temperature and ± 3/4°C over a full , °C in still air. The LM35 is rated to operate over a -55° to +150°C temperature range, while the LM35C is rated for a -40° to +110°C range (-10° with improved accuracy). The LM35 series is available pack- aged in hermetic TO-46 transistor packages, while the LM35C, LM35CA, and LM35D are also available in


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DS005516-4

Abstract: LM35 internal Block Diagram DS005516-23 sensor LM35 LM35C lm35 application note TRANSISTOR LM35 LM35 Series LM35 Block Diagram LM35S
Text: sensors calibrated in ° Kelvin, as the user is not required to subtract a large constant voltage from , calibration or trimming to provide typical accuracies of ± 1/4°C at room temperature and ± 3/4°C over a full , °C in still air. The LM35 is rated to operate over a -55° to +150°C temperature range, while the LM35C is rated for a -40° to +110°C range (-10° with improved accuracy). The LM35 series is available pack- aged in hermetic TO-46 transistor packages, while the LM35C, LM35CA, and LM35D are also available in


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PDF AN-450 DS005516-23 LM35H, LM35AH, LM35CH, LM35CAH, LM35DH DS005516-4 LM35 internal Block Diagram DS005516-23 sensor LM35 LM35C lm35 application note TRANSISTOR LM35 LM35 Series LM35 Block Diagram LM35S
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