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Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
SCT3030AR SCT3030AR ECAD Model ROHM Semiconductor 650V, 70A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3060AR SCT3060AR ECAD Model ROHM Semiconductor 650V, 39A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3105KL SCT3105KL ECAD Model ROHM Semiconductor 1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3017AL SCT3017AL ECAD Model ROHM Semiconductor 650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3030KL SCT3030KL ECAD Model ROHM Semiconductor 1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3080AL SCT3080AL ECAD Model ROHM Semiconductor 650V, 30A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

transistor 81 110 w 85 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Text: 80 81 81 81 82 82 82 83 83 83 84 84 85 85 86 86 87 88 88 88 88 88 Index , 81 81 75 75 75 75 75 75 75 75 75 75 76 76 76 76 76 76 85 85 86 86 76 76 76 , BCW30 Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD Transistor Transistor


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PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: 75 75 75 75 75 75 75 75 75 75 75 75 75 81 76 76 76 76 76 76 76 76 76 76 77 77 77 77 77 77 85 85 87 87 , 81 81 81 81 81 81 80 80 80 80 80 80 80 80 80 80 80 80 80 80 79 79 85 79 85 79 79 85 79 79 85 79 79 85 , Transistor Transistor Transistor Transistor 86 84 85 84 85 84 85 84 85 84 85 84 85 84 85 84 85 84 84 84 84 84 , Domestic & Overseas Network 74 74 74 75 75 76 76 76 76 77 78 78 79 79 79 80 80 80 81 81 81 81 82 82 82 83 83 84 84 85 85 86 87 88 89 89 89 89 89 90 http://www.keccorp.com 3 Index 2N3904 2N3904C


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PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
NE24318

Abstract: No abstract text available
Text: . 85 .89 .87 .88 . 85 28 6 -20 -40 -62 - 81 -105 -127 -151 .72 .65 .55 .49 .43 .40 .35 .32 .26 , NPN MEDIUM POWER OSCILLATOR TRANSISTOR FEATURES_ · HIGH OSCILLATOR POWER OUTPUT , DESCRIPTION The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable , PF W °C/ W 150 150 320 630 Cob Pt R th (J-C) 0.30 2.75 45 0.65 1 2.75 45 0.95 , UMTS V V V V mA mA mA mA °C °C RATINGS 25 1.5 16 25 110 110 220 440 200 -65 to +200 TJ TSTG


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PDF NE243 NE24300 NE243187 NE243188 NE243287 NE243288 NE243499 IS12I NE24318
QE R 643

Abstract: No abstract text available
Text: · Features MA4T243 Series V3.00 Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip Available in Hermetic Surface Mount Packages , below 4 dB. This industry standard transistor is available as a chip for hybrid oscillator circuits or , /gold metalization process. The MA4T243 transistor is em itter ballasted using ion im planted , Specifications Subject io C hange W iih o u i Notice. M/A-COM, Inc. North America: T e l.(8 0 0 )3 6 6 -2 2 6


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PDF MA4T243 MA4T24300 MA4T24300 MA4T24335 QE R 643
NE243187

Abstract: NE243188
Text: . FREQUENCY (MHz) 200 3000 4000 5000 6000 7000 8000 9000 10000 MAG .92 . 85 . 81 .77 .72 .69 .65 .68 .68 S11 ANG , -50 -72 -91 -108 -127 -145 -164 178 156 .47 .64 .74 . 81 . 85 .89 .87 .88 . 85 28 6 -20 -40 -62 - 81 -105 , NPN MEDIUM POWER OSCILLATOR TRANSISTOR FEATURES_ · HIGH OSCILLATOR POWER OUTPUT: NE243 SERIES DESCRIPTION The NE243 NPN series transistor is desined for oscillator applications to , 0.25 1.0 0.25 1.0 0.5 2.0 I ebo ha Pose mW mW mW pF W °C/ W 150 150 320 630


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PDF NE243 NE24300 NE243187 NE243188 NE243287 NE243288 NE243499
NE24300

Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
Text: 3000 . 85 -109 1.51 -76 .61 2 .69 89 4000 . 81 -140 1.35 -97 .72 -24 .58 64 5000 .77 -171 1.21 -118 .79 , 6000 .65 176 1.02 -127 . 85 -62 .43 18 7000 .59 148 .92 -145 .89 - 81 .40 -2 8000 .51 123 .82 -164 .87 , NEC/ CALIFORNIA SbE D b4E7414 00D2371 31b «NECC NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR , transistor is designed for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold , 0.30 0.65 1 0.95 1.5 2.9 4 Rm Thermal Resistance (Junction-to-Case) °C/ W 45 45 30 18 Pr


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PDF b4E7414 00D2371 NE243 NE24300 NE243187 NE243188 NE243287 NE243288 transistor 81 110 w 63 transistor 81 110 w 85 NE243499 NE24318
2008 - 3 phase MOTOR CONTROL ic

Abstract: AMIS-30521
Text: 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 , Diagram VDD CPN CPP VCP VBB CLK Timebase Chargepump POR EMC T R A N S L A T O R P W M , P W M I-sense MOTYP MOTYN CLR ERR Bandgap AMIS-30521 PC20070322.1 GND Figure 1 , Figure 3, the thermal resistance junction ­ to ­ ambient can be brought down to a level of 30°C/ W , ) (2) Min. +6 4.75 -40 -40 Max. +30 5.25 18 190 +125 + 85 +160 Units V V mA A °C °C °C


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PDF AMIS-30521 AMIS-30521 3 phase MOTOR CONTROL ic
Not Available

Abstract: No abstract text available
Text: ) provides excellent tuning linearity and phase noise for b o th n arrow an d b ro a d ban d w id th system applications. These designs use either a silicon bipolar transistor or FET device, dep endent on frequency, as , tuning voltage with the best linearity. For n arro w b an d w id th designs a silicon ab ru p t varactor , . W here oscillators with very fast tuning speeds over up to octave frequency bandw idths are required , transmitters. W here an oscillator with high frequency stability is required, as in radar or communications


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PDF
oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: 71 71 71 72 73 74 77 78 78 79 80 80 81 - 82 82 82 82 83 82 82 83 85 87 , Table of Contents Index 4 SMD Bipolar Junction Transistors Transistor Line-up (PNP Transistor ) Transistor Line-up (NPN Transistor ) Small Signal General Purpose Transistors Small Signal Low , Transistors High hFE Power Transistors Junction Field Effect Transistors Transistor with Built-in Bias , ) 500mA Low Dropout Voltage Regulators (On/Off Controllable) (Positive) Transistor Array & Interface


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PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Not Available

Abstract: No abstract text available
Text: excellent tuning characteristics over octave freq u en cy ban d w id th s for w id eb a n d system s applications. These designs use a negative resistance transistor oscillator, for the lower frequencies this is , , manufactured in house by M/A-COM, produces a very large cap acitance change to g eth er w ith a high degree of , are required. VCOs give im proved LO frequency tuning speed and output pow er flatness in w ideband EW receivers and rapid generation of jamming signals in ECM transmitters. The w ide bandw idths and com


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PDF 20GHz. 2-OSM2052-3363-02
transistor K 1413

Abstract: 5607 transistor E243287 chip die npn transistor NE243287
Text: 12 V , IC = 8 0 m A . FREQUENCY (MHz) 200 3000 4000 5000 6000 7000 8000 9000 10000 MAG .92 . 85 , 81 , 1.30 1.17 1.02 .92 .82 .75 .67 -50 -72 -91 -108 -127 -145 -164 178 156 .47 .64 .74 . 81 . 85 .89 .87 .88 . 85 28 6 -20 -40 -62 - 81 -105 -127 -151 .72 .65 55 .49 .43 .40 .35 .32 .26 120 93 67 42 18 -2 -27 -46 , NPN MEDIUM POWER OSCILLATOR TRANSISTOR FEATURES_ · HIGH O SCILLATO R POW ER O UTPUT: NE243 SERIES DESCRIPTION The NE243 NPN series transistor is desined for oscillator


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PDF NE243 NE24300 transistor K 1413 5607 transistor E243287 chip die npn transistor NE243287
1997 - str 6707

Abstract: str 6707 datasheet datasheet str 6707 Q 817 4894 PO 903 rd sot23 marking code 10 sot23 marking code 43 sot23 BP317
Text: junction to ambient VALUE 500 note 1 UNIT K/ W Note 1. Transistor mounted on an FR4 , transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 03 Philips Semiconductors Product specification PNP high-voltage transistor , · Switching applications. handbook, halfpage 3 3 DESCRIPTION PNP high-voltage transistor in , voltage open emitter - - - 110 V VCEO collector-emitter voltage open base - -


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PDF M3D088 BSS63 BSS64. SCA54 117047/00/02/pp8 str 6707 str 6707 datasheet datasheet str 6707 Q 817 4894 PO 903 rd sot23 marking code 10 sot23 marking code 43 sot23 BP317
h t o 2000 varactor tuned oscillator

Abstract: No abstract text available
Text: applications. These designs use either a silicon bipolar transistor or FET device, dependent on frequency, as , conventional alum ina M IC w hich is packaged in a standard TO-8 outline. The package is hermetically sealed by , . Where oscillators w ith very fast tuning speeds over up to octave frequency bandw idths are required , itters. W here an oscillator with high frequency stability is required, as in radar or communications , : 800 366 2266 Asia Pacific: ( 81 ) 3 3226 1671 MLO 60000 SERIES SPECIFICATIONS (guaranteed


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PDF 300MHz 10GHz DS147-1 h t o 2000 varactor tuned oscillator
1996 - IC 4816 PIN DIAGRAM

Abstract: TDA 4816 A smps control ic with 6 pin sip smd 4816 tda 4816 TDA 4814 A 8 PIN SMD IC FOR SMPS 4814 charge 4817 6 PIN SMD IC FOR SMPS
Text: transistor Zero crossing detector for discontinuous operation mode with variable frequency q 110 /220 V AC , Type Ordering Code Package w TDA 4817 Q67000-A8298 P-DIP- 8-1 w TDA 4817 G Q67000-A8299 P-DSO- 8-1 (SMD) w = New type The TDA 4817 contains all functions for designing electronic , Controls boost converter as an active harmonics filter Direct drive of SIPMOS transistor Zero crossing detector for discontinuous operation mode with variable frequency q 110 /220 V AC operation without


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PDF P-DIP-14-1 P-DSO-16-2 Q67000-A8163 Q67000-A8290 IC 4816 PIN DIAGRAM TDA 4816 A smps control ic with 6 pin sip smd 4816 tda 4816 TDA 4814 A 8 PIN SMD IC FOR SMPS 4814 charge 4817 6 PIN SMD IC FOR SMPS
1996 - Q67000-A8298

Abstract: TDA datasheet PUSH-PULL CONTROLLER FOR ELECTRONIC BALLASTS active power filter for harmonic control internal circuit diagram of choke Q67000-A8299 TDA 4817 G smps control ic with 6 pin sip CQ25 active harmonic filter
Text: approaching 1 Controls boost converter as an active harmonics filter Direct drive of SIPMOS transistor Zero crossing detector for discontinuous operation mode with variable frequency q 110 /220 V AC operation without switchover q Standby current consumption of 0.5 mA q q q q q P-DIP- 8-1 P-DSO- 8-1 Type Ordering Code Package w TDA 4817 Q67000-A8298 P-DIP- 8-1 w TDA 4817 G Q67000-A8299 P-DSO- 8-1 (SMD) w = New type The TDA 4817 contains all functions for designing electronic


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PDF Q67000-A8298 Q67000-A8299 Q67000-A8298 TDA datasheet PUSH-PULL CONTROLLER FOR ELECTRONIC BALLASTS active power filter for harmonic control internal circuit diagram of choke Q67000-A8299 TDA 4817 G smps control ic with 6 pin sip CQ25 active harmonic filter
Not Available

Abstract: No abstract text available
Text: (Unit: mm) ) Power Dissipation Pd mW 25 1300 85 Thermal Resistance ( / W ) 520 , , error amplifier, driver transistor , current limiter and phase compensator. The CE function enables the , ~ Operating Ambient Temperature A 85 Packages SOT-25, SOT-89-5, USP-6C Environmentally Friendly , ) 500 1300 (PCB mounted)(*2) -40 + 85 -55 UNITS mW +125 Pd/( VOUT - VIN) (*2) The power , IOUT=20mA -40 Topr 85 VIN= VOUT(T)-1.0 +0.5Vp-pAC, IOUT=20mA, f=1kHz Short-Circuit


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PDF XC6901 ETR03043-006 200mA
2003 - TDA 16822

Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
Text: Quasi-resonant switching 3 4 Contents SMPS ICs SMPS IC Overview 6 P W M C o n t ro l l e r , ) 110 kHz approx. 20 kHz adjustable 20 kHz 21 kHz unlimited unlimited 72 , ( 85 . 270 V) without heat sink * * * * * Power range (190 . 270 V) without heat , 11 mA 5 mA 10 mA 6.5 mA 7,2 mA 7.5 . 15.5 V 8 . 16 V 9 . 20 V 8.5 . 21 V 8.5 . 21 V P-DIP-8 P-DIP-14 P-DIP-8 P-DIP-8 P-DIP-8 P-DSO-14 P-DSO


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PDF B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
1997 - sot446

Abstract: LWE2010S SC15 SOT446A
Text: ( W ) Gpo (dB) 2.3 MODE OF OPERATION 18 110 0.8 8 class A (CW) see Figs 6 , 0 0 0.05 0.1 0.15 Pi ( W ) 0.2 f = 2.3 GHz; VCE = 18 V; IC = 110 mA (regulated). , 0.2 2 0.5 PL1 = 0.8 W ; VCE = 18 V; ZO = 50 ; IC = 110 mA. 1 MGA253 Fig.6 Input , ­j 10 5 0.2 PL1 = 0.8 W ; VCE = 18 V; ZO = 50 ; IC = 110 mA. 2 0.5 1 MGA252 , DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product


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PDF LWE2010S SCA53 127147/00/02/pp12 sot446 LWE2010S SC15 SOT446A
1997 - Not Available

Abstract: No abstract text available
Text: 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 S11 Mag. .95 .84 . 81 . 81 .80 .79 .78 , 100 93 85 67 47 35 26 dB 12.7 11.0 8.9 6.6 4.6 3.1 2.2 1.4 -0.1 -1.4 -2.5 -3.5 , Output Power: 27.0 dBm Typical P1 dB at 4 GHz • High Gain at 1 dB Compression: 11.0 dB Typical G1 , transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency range. This , Parameters and Test Conditions Units Min. Typ. 27.0 26.5 11.0 6.0 f = 4.0 GHz f = 8.0 GHz f


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PDF ATF-46171 ATF-46171 5965-8729E
2007 - nqfp

Abstract: AMIS-30522 NQFP-32 stepper motor sla step motor driver nxt 30522
Text: 011 100 110 1/32 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 , N S L A T O R MOTXP P W M I-sense EMC MOTYP P W M MOTYN I-sense CLR , ­ to ­ ambient can be brought down to a level of 30°C/ W . NQFP-32 PC20041128.2 Figure 3: PCB , 4 Max. +30 5.25 18 +125 + 85 +160 Units V V mA °C °C °C AMIS , oscillator Min. 20 90 110 VBB=12V, ILOAD=50mA, CLOAD=220nF External conditions tbd µs µs


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PDF AMIS-30522 M-20684-001 nqfp NQFP-32 stepper motor sla step motor driver nxt 30522
40569

Abstract: vco using varactor diode for carrier generation
Text: applications. These designs use a resonator stabilized silicon bipolar transistor as a negative resistance , designs to meet specific system specifications and VCOs integrated w ith other com ponents. To discuss , . Specifications Subject to Change W ithout Notice. 1 North America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. + 81 (03)3226-1671 Fax + 81 (03) 3226-1451 Europe: Tel. +44 , V3.00 SPECIFICATIONS (guaranteed -55°C to + 85 °C) Phase Noise at Freq Centre Tuning +25°C Freq


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PDF
ATF-13736

Abstract: No abstract text available
Text: - 110 -135 -170 149 112 86 63 39 20 9 -1 -17 dB 11.0 10.2 9.8 9.6 9.9 9.9 9.5 8.8 8.1 7.6 7.0 6.4 6.0 , 16.0 Mag. .88 .76 .68 .56 .42 .37 .47 .57 .63 .69 .77 .82 . 85 .83 . 81 Ang. -44 -68 -90 -113 -145 161 , Whpl H E W L E T T müHM PA C K A R D 2 -1 6 GHz Low N oise Gallium Arsenide FET Technical Data , m ance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective m , length w ith a total gate periphery of 36 micro-X Package 250 microns. Proven gold based


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PDF ATF-13736 ATF-13736 5965-8722E
2002 - TB03100M

Abstract: TRIPLE ZENER DIODE ARRAY Dual N-Channel mosfet sot-363 Dual P-Channel mosfet sot-363 thyristor tt 330 n16 DMMT847B sot26 sot363 transistor ALL4150 sot-363 MARKING n10 diode marking code LY sot-353
Text: -23 . 4-5 Dual NPN Transistor / SOT-26 . 4-5 Dual PNP Transistor / SOT-26 . 4-5 Matched Transistor Arrays . 4-6 Dual Matched NPN Transistor Array / SOT-363. 4-6 Dual Matched PNP Transistor Array / SOT


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PDF represented226B, ZMM5227B, ZMM5228B, ZMM5229B, ZMM5230B, ZMM5231B, ZMM5232B, ZMM5233B, ZMM5234B, ZMM5235B, TB03100M TRIPLE ZENER DIODE ARRAY Dual N-Channel mosfet sot-363 Dual P-Channel mosfet sot-363 thyristor tt 330 n16 DMMT847B sot26 sot363 transistor ALL4150 sot-363 MARKING n10 diode marking code LY sot-353
Ex-92

Abstract: vegaswing 83 vegator Burgess Ex VIB41 VIB51 VIB52X PTB Ex-92.C.2141 VIB52 0/PTB Ex-92.C.2141
Text: , 1 A DC max. 125 VA, 54 W - Switching current - Breaking capacity T - Transistor output (E40 , max. 0,5 W floating transistor output NPN/PNP-wiring max. 400 mA (overload and permanently , 10 . 55 V DC max. 0,5 W floating transistor output NPN/PNP can be wired max. 400 mA (overload , , VEGASWING 81 F. with ECTFE (Halar), Hastelloy or enamel or VEGASWING 83 F. with enamel or Halar up to , oscillators - relay output - non-contact switch - transistor output - two-wire output · all standard


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PDF
F2683

Abstract: No abstract text available
Text: . Ang. dB Mag. Ang. .94 -44 9.0 2.82 130 .86 -63 8.5 2.65 110 .78 - 81 8.0 2.51 89 .68 -97 7.9 2.49 71 .57 -118 8.1 2.53 51 .43 -151 8.5 2.65 28 .37 165 8.5 2.66 3 .40 122 8.0 2.52 -20 .47 96 7.7 2.42 -42 , Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for , damage may occur if any of these limits are exceeded. 23. T CAs e = 2 5 °C . m W /°C Derate at 2 , : 0jC= 350°C/ W ; TCH= 150°C 1 |xm Spot Size[5l P a r t N um ber O rderin g In fo rm ation P art


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PDF TF-26836 ATF-26836 5965-8704E 44475A4 DD1771Ö F2683
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