The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TK2R4A08QM TK2R4A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS
XPN1300ANC XPN1300ANC ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF)
TK155U65Z TK155U65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.155 Ohm@10V, TOLL
TK6R9P08QM TK6R9P08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK
XPW4R10ANB XPW4R10ANB ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L
TK5R1A08QM TK5R1A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS

transistor 7412 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor 7412

Abstract: IC 7412 IC 7408 ti 7411 3 INPUT AND gate IC 7408 MAX7408 cd 7411 IC 7408 not gate X7408 ic 7408 4 st and
Text: /MAX7411/MAX 7412 /MAX 7415 _ Chip I n f o r m a t i o n TRANSISTOR COUNT: 1457 , (shutdown mode) Available in 8-Pin pMAX/DIP Packages Low Output Offset: ±4mV MAX7408/MAX7411/MAX 7412 , | 50pF load to GND at OUT, SHDN = V d d , OS = COM, 0.1 |jF from COM to GND, MAX7408/MAX7411/MAX 7412 , noted. Typical values are at T a = +25°C.) (Note 3) MAX7408/MAX7411/MAX 7412 /MAX 7415 PARAMETER f , /MAX 7412 /MAX 7415 Ty p ic a l O p e r a t i n g C h a r a c t e r i s t i c s ( c o n t in u e d


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PDF AX7408/MAX7411/MAX7412/MAX7415 7408/M AX7412/M AX7415) 15kHz, MS001-XX HD-058AB transistor 7412 IC 7412 IC 7408 ti 7411 3 INPUT AND gate IC 7408 MAX7408 cd 7411 IC 7408 not gate X7408 ic 7408 4 st and
2002 - transistor 9718

Abstract: transistor 7412 "marking nh" 2SC5648 D2502 84-10 osc ta 5732 ETC 9668 marking nh
Text: Ordering number : ENN7327 2SC5648 NPN Epitaxial Planar Silicon Transistor 2SC5648 UHF to S Band Low-Noise Amplifier and OSC Applications · · · Low noise : NF=2.6dB typ (f=2GHz). unit : mm High cutoff frequency : fT=9.0GHz typ (VCE=1V). 2159 : fT=11.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=10.5dB typ (f=2GHz). Ultraminiature and thin flat lead package 0.25 , - 74.12 3000 0.198 -128.83 2.208 51.43 0.210 46.23 0.489 -76.70 No.7327-4/7


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PDF ENN7327 2SC5648 S21e2 2SC5648] transistor 9718 transistor 7412 "marking nh" 2SC5648 D2502 84-10 osc ta 5732 ETC 9668 marking nh
1997 - IC 7404 7406

Abstract: draw pin configuration of ic 7404 internal pin configuration of ic 7408 MAX872CSA MAX872 MAX872CPA MAX872EPA MAX872ESA MAX874 MAX874CPA
Text: OUTPUT VOLTAGE vs. TEMPERATURE MAX872 OUTPUT VOLTAGE vs. TEMPERATURE MAX872/ 74-12 MAX874 , source resistance. 0.072" (1.829mm) *MAKE NO CONNECTIONS TO THESE PADS TRANSISTOR COUNT: 89


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PDF MAX872/MAX874 200mV MAX872 MAX874 MAX872) MAX874) MAX872, 40ppm/ IC 7404 7406 draw pin configuration of ic 7404 internal pin configuration of ic 7408 MAX872CSA MAX872CPA MAX872EPA MAX872ESA MAX874CPA
2008 - transistor 9718

Abstract: transistor 7412 ETC 9668 007mA 2SC5648 D2502 84-10 osc 2238 600 FT115
Text: Ordering number : ENN7327 2SC5648 NPN Epitaxial Planar Silicon Transistor 2SC5648 UHF to S Band Low-Noise Amplifier and OSC Applications · · · Low noise : NF=2.6dB typ (f=2GHz). unit : mm High cutoff frequency : fT=9.0GHz typ (VCE=1V). 2159 : fT=11.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=10.5dB typ (f=2GHz). Ultraminiature and thin flat lead package 0.25 , 0.489 - 74.12 3000 0.198 -128.83 2.208 51.43 0.210 46.23 0.489 -76.70 No


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PDF ENN7327 2SC5648 S21e2 2SC5648] transistor 9718 transistor 7412 ETC 9668 007mA 2SC5648 D2502 84-10 osc 2238 600 FT115
1997 - IC 7404 7406

Abstract: MAX874CSA MAX872 MAX872CSA MAX872CPA MAX872EPA MAX872ESA MAX874 MAX874CPA
Text: OUTPUT VOLTAGE vs. TEMPERATURE MAX872 OUTPUT VOLTAGE vs. TEMPERATURE MAX872/ 74-12 MAX874 , source resistance. 0.072" (1.829mm) *MAKE NO CONNECTIONS TO THESE PADS TRANSISTOR COUNT: 89


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PDF MAX872/MAX874 200mV MAX872 MAX874 MAX872) MAX874) MAX872, 40ppm/ IC 7404 7406 MAX874CSA MAX872CSA MAX872CPA MAX872EPA MAX872ESA MAX874CPA
1997 - MAX872CSA

Abstract: MAX872 MAX872CPA MAX872EPA MAX872ESA MAX874 MAX874CPA MAX874CSA MAX872-MAX874
Text: OUTPUT VOLTAGE vs. TEMPERATURE MAX872 OUTPUT VOLTAGE vs. TEMPERATURE MAX872/ 74-12 MAX874 , source resistance. 0.072" (1.829mm) *MAKE NO CONNECTIONS TO THESE PADS TRANSISTOR COUNT: 89


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PDF MAX872/MAX874 829mm) MAX872CSA MAX872 MAX872CPA MAX872EPA MAX872ESA MAX874 MAX874CPA MAX874CSA MAX872-MAX874
2008 - OTA5180A

Abstract: No abstract text available
Text: . 17 7.4.12 R11: LED_CURRENT、BL_DRV、DRV_FREQ、PFM_DUTY , transistor gate signal for the boost converter Main boost regulator feedback input. Connect feedback , 18 APR. 01, 2008 Preliminary Version: 0.2 Preliminary OTA5180A 7.4.12 R11 , converter uses a Power transistor to provide maximum efficiency and to minimize VDD OTA5180A L100


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PDF OTA5180A 1440x544 480RGBx272 OTA5180A
ic 74226

Abstract: jk flip flop 74103 ic D flip flop 7474 7471 rs flip flop 4011 flip flop IC 7400 SERIES list Ic ttl 7490, 7493, 7495 ci 74386 7414 NOT gate ic IC LA 74141
Text: Bipolar Transistor (Sm all Signal) N PN(Driver) m. > pvjp (Lateral) (Vertical) Pinched Resistors , 1SE ? 7744^0 0000705 T c LIST OF CHA RA CTERISTICS · SMALL SIGNAL N PN TRANSISTOR Param , SMALL SIGNAL LATERAL P N P TRANSISTOR Param eters Min 50 80 510 20 100 100 1000 1500 2000 Typ 75 120 540 , esistance (@ Ic = 100/iA , I b= 10//A) · SMALL SIGNAL VERTICAL PNP TRANSISTOR Param eters M in 60 80 , 7409 7410 7411 7412 7413 7414 7415 7416 7417 7420 7421 7422 7423 7425 7426 7427 7428 7430 7432 7433


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PDF RP3G01 RP3G01 ic 74226 jk flip flop 74103 ic D flip flop 7474 7471 rs flip flop 4011 flip flop IC 7400 SERIES list Ic ttl 7490, 7493, 7495 ci 74386 7414 NOT gate ic IC LA 74141
2006 - 70GHz HEMT Amplifier

Abstract: smd code z16 transistor z14 smd FPD1000AS T491B105M035AS7015 atc600s2r0bw max 9694 e transistor bc 567 capacitor 1mf
Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. Optimum Technology Matching® Applied GaAs HBT , 94.64 92.31 89.97 87.60 85.33 83.03 80.64 78.35 76.22 74.12 71.85 69.43 67.07 64.55 62.06


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PDF FPD1000AS FPD1000AS 31dBm 42dBm -52dBc 21dBm 880MHz) EB1000AS-AB 70GHz HEMT Amplifier smd code z16 transistor z14 smd T491B105M035AS7015 atc600s2r0bw max 9694 e transistor bc 567 capacitor 1mf
2006 - transistor Bc 542

Abstract: transistor bc 567
Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. Optimum Technology , 101.30 99.02 96.94 94.64 92.31 89.97 87.60 85.33 83.03 80.64 78.35 76.22 74.12 71.85 69.43


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PDF FPD1000AS FPD1000AS 31dBm 42dBm -52dBc 21dBm 85GHz) EB-1000AS-AA 14GHz) transistor Bc 542 transistor bc 567
2006 - CAPACITOR 33PF

Abstract: 8653 p FPD1000AS T491B105M035AS7015 ATC600S680 atc600s2r0bw TP 220 bjt Tyco 108-18 capacitor 1mf BC 251 transistor
Text: a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT , 80.64 78.35 76.22 74.12 71.85 69.43 67.07 64.55 62.06 59.65 57.31 54.97 Tape and Reel


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PDF FPD1000AS 31dBm 42dBm -52dBc 21dBm FPD1000AS 14GHz) EB1000AS-AD CAPACITOR 33PF 8653 p T491B105M035AS7015 ATC600S680 atc600s2r0bw TP 220 bjt Tyco 108-18 capacitor 1mf BC 251 transistor
2006 - ims pcb

Abstract: No abstract text available
Text: /InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in , 99.02 96.94 94.64 92.31 89.97 87.60 85.33 83.03 80.64 78.35 76.22 74.12 71.85 69.43 67.07 64.55 62.06


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PDF FPD1000AS FPD1000AS PARSTD-1686 MIL-HDBK-263. FPD1000AS-EB EB-1000AS-AB 880MHz) EB-1000AS-AA 85GHz) ims pcb
2010 - Not Available

Abstract: No abstract text available
Text: between the gates and source protect against excessive input voltage surges. The transistor is available , 0.00292 79.56 0.9929 −5.31 300 0.9762 −27.09 2.69 155.90 0.00420 74.12 , Control MOSFET Metal-Oxide Semiconductor Field-Effect Transistor UHF Ultra High Frequency


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PDF BF1216 BF1216 OT363
2008 - transistor SMD P2F

Abstract: smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 FPD1000AS T491B105M035AS7015 filtronic Solid State
Text: packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT , 92.31 89.97 87.60 85.33 83.03 80.64 78.35 76.22 74.12 71.85 69.43 67.07 64.55 62.06 59.65


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PDF FPD1000AS FPD1000AS J-STD-020C, transistor SMD P2F smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 T491B105M035AS7015 filtronic Solid State
2007 - transistor marking code 1325

Abstract: R04003 ims pcb filtronic Solid State
Text: /InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in , 94.64 92.31 89.97 87.60 85.33 83.03 80.64 78.35 76.22 74.12 71.85 69.43 67.07 64.55 62.06 59.65 57.31


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PDF FPD1000AS FPD1000AS J-STD-020C, transistor marking code 1325 R04003 ims pcb filtronic Solid State
2010 - bf1216

Abstract: Dual Gate MOSFET graphs dual gate mosfet in vhf amplifier SC-88 M5t transistor M5W
Text: between the gates and source protect against excessive input voltage surges. The transistor is available , 0.00420 74.12 0.9916 -7.92 400 0.9656 -35.80 2.65 148.17 0.00540 69.71 , Metal-Oxide Semiconductor Field-Effect Transistor UHF Ultra High Frequency VHF Very High Frequency


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PDF BF1216 BF1216 OT363 Dual Gate MOSFET graphs dual gate mosfet in vhf amplifier SC-88 M5t transistor M5W
1999 - smd transistor M7A

Abstract: ED-7304-1 smd m7a uPD4011BG ED730 EIA and EIAJ tape standards ED-7417 EIA and EIAJ standards ED-7409 IEC-Publication-747
Text: ED- 7412 Quad Flat lead-less Package QFN 1988.06 ED-7413 Single In-line Package SIP , Outlines/Registrations DO-×××: Diode Outlines TO-×××: Transistor Outlines CO-×××: Carrier Outlines UO-×××: Uncased Outlines MO-×××: Microelectronic Outlines · Standards TS-×××: Transistor Standard GS


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PDF PD41265L-12-E1 PD41256L PD23C32000AGX-$ PD23C32000A smd transistor M7A ED-7304-1 smd m7a uPD4011BG ED730 EIA and EIAJ tape standards ED-7417 EIA and EIAJ standards ED-7409 IEC-Publication-747
2007 - BTS5235-2G

Abstract: PG-DSO-20-43
Text: embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with , transistor is built by a N-channel vertical power MOSFET with charge pump. The inputs are ground referenced , 150 °C) Voltage at power transistor Supply Voltage for Load Dump protection Vbb Vbb(SC) Unit , . As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power transistor switches , static ±10% after change of load current Over Load in ON-State 7.4.12 Over load detection current VIS


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PDF BTS5235-2G BTS5235-2G PG-DSO-20-43
2008 - BTS5235-2G

Abstract: bts5235 transistor mj 4035 BTS5235L GPS05094 PG-DSO-20-43
Text: -20-43 package providing embedded protective functions. The power transistor is built by a N-channel vertical , components to a minimum. The power transistor is built by a N-channel vertical power MOSFET with charge pump , V 4.1.3 Voltage at power transistor VDS ­ 52 V 4.1.4 Supply Voltage for Load , . As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power transistor switches , 7.4.12 Over load detection current 1) 7.4.13 Sense signal settling time in overload condition tsIS


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PDF BTS5235-2G BTS5235-2G bts5235 transistor mj 4035 BTS5235L GPS05094 PG-DSO-20-43
Not Available

Abstract: No abstract text available
Text: NPN SILICON RF TRANSISTOR NE894M13 / 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES · Ideal for 3 GHz or higher OSC applications · Low noise, high gain fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt · UHS0 technology (fT = 25 GHz) adopted · High reliability , 7.861 7.412 6.991 6.577 6.166 5.808 5.465 5.160 4.875 4.604 4.377 4.167 3.967 3.802 3.628 3.481 3.327


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PDF NE894M13 2SC5787 S21e2 NE894M13-A 2SC5787-A NE894M13-T3-A 2SC5787-T3-A conta160 PU10070EJ01V0DS
2006 - toshiba ta 7424

Abstract: t206 transistor GRM40F104Z50PT 1FW 43 transistor T207 DIODE transistor t342 t328 1FW 48 transistor diode t318 1FW 46 transistor
Text: .16 7.4.1.1 7.4.1.2 7.4.1.3 7.4.1.4 7.4.2 5. Description of Pin Functions , time Min. 10 200 Typ. - Max. - Unit ms us 7.4.1.2 CLKIN (27 MHz) Clock Input Timing , Resistor Resistor FET Transistor Diode Diode USBReceptacle Part Type Number GRM31MF11C475ZA12B


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PDF S1R72005B00A300/F00A300 E-08190 toshiba ta 7424 t206 transistor GRM40F104Z50PT 1FW 43 transistor T207 DIODE transistor t342 t328 1FW 48 transistor diode t318 1FW 46 transistor
1998 - Datasheet of IC 7432

Abstract: 7415 ic pin details data sheet IC 7432 DATASHEET OF IC 7401 7401 ic configuration IC 7409 draw pin configuration of ic 7402 INFORMATION OF IC 7424 BGA and QFP Package mounting EIA and EIAJ standards
Text: -7402-1 ED-7403-1 ED-7405 ED-7405-1 ED-7406A ED-7407 ED-7408A ED-7409 ED-7410 ED- 7412 ED-7413 ED , -×××: semiconductor device ( transistor ) package with 3 or more pins DO-×××: semiconductor device (diode) package with


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2001 - 2SC5787

Abstract: 2SC5787-T3 NEC 8255 marking b7
Text: . DATA SHEET NPN SILICON RF TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW , -18.1 -26.4 -34.5 -42.1 -49.0 -55.9 -62.1 -68.1 9.232 9.035 8.690 8.306 7.861 7.412


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2001 - 2SC5787

Abstract: transistor 4580 2SC5787-T3
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES · Ideal for 3 GHz or higher OSC applications · Low noise, high gain fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt · UHS0 technology (fT = 25 GHz) adopted · High , 7.861 7.412 6.991 6.577 6.166 172.0 162.5 154.4 146.8 139.3 133.2 127.3 121.9 116.9


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PDF 2SC5787 S21e2 2SC5787-T3 2SC5787 transistor 4580 2SC5787-T3
2001 - 2SC5787

Abstract: 2SC5787-T3 CRE 6203
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES · Ideal for 3 GHz or higher OSC applications · Low noise, high gain fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt · UHS0 technology (fT = 25 GHz) adopted · High , -18.1 -26.4 -34.5 -42.1 -49.0 -55.9 -62.1 -68.1 9.232 9.035 8.690 8.306 7.861 7.412


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PDF 2SC5787 S21e2 2SC5787-T3 2SC5787 2SC5787-T3 CRE 6203
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