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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor 639 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor BC 236

Abstract: bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
Text: 000^30^ AL GG BC 635 · BC 637 · BC 639 r - a i -33 Silicon NPN Epitaxial Planar Transistors , 125 °C Collector-base breakdown voltage B C 635 BC 637 BC 639 T1.2/508.0888 E B C 637 60 1 1.5 1 150 5 5 .+ 150 BC 639 80 V A A ·a W °C °C 45 ^ C M P .o , T\ ^thJA 156 125 55 Min , 000^310 7 BC 635 · BC 637 · BC 639 Min. Collector-emitter breakdown voltage lc = 20 mA BC 635 BC 637 B C 639 Emitter-base breakdown voltage /E= 1 (jA . Collector saturation voltage /0 = 500 mA, /B = 50


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PDF BC635 15A3DIN transistor BC 236 bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
2001 - BC635 ECB

Abstract: BC638
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications · Complement to BC635/637/ 639 1 TO-92 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum , Epitaxial Silicon Transistor Analog and Mixed Signal Contents Discrete Features | Applications | Product , Optoelectronics Markets and q Complement to BC635/637/ 639 applications New products Product selection and back to , Products groups PNP Epitaxial Silicon Transistor Analog and Mixed Signal Contents Discrete Features


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PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC635 ECB BC638
2009 - ST1152b

Abstract: IC 7400 diagram and truth table st1152 toy motor Control IC SP-ST1152B-A transistor 2309 Bi-directional Motor Driver ST1152
Text: Low saturation voltage ( Upper transistor + low transistor residual voltage; 0.3V typ. at 400mA, 0.6V typ. at 750mA) Parallel connection ( two-channel driver: Upper transistor + low transistor residual , 193 639 318 639 544 242 669 242 1033 639 1153 639 1424 811 1424 1018 1424 1204 1424


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PDF ST1152B SP-ST1152B-A Tel886-3-5645656 Fax886-3-5645626 ST1152b IC 7400 diagram and truth table st1152 toy motor Control IC transistor 2309 Bi-directional Motor Driver ST1152
2002 - NPN transistor ECB TO-92

Abstract: Bc637 BC635 ECB transistor C 639 W transistor BC637 complement
Text: BC635/637/ 639 BC635/637/ 639 Switching and Amplifier Applications · Complement to BC636/638/640 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum , BC635/637/ 639 Typical Characteristics 200 IB = 1.8 mA 1000 IC[mA], COLLECTOR CURRENT , Semiconductor Corporation Rev. B2, December 2002 BC635/637/ 639 Package Dimensions TO , INVESTORS | Sitema MY FA Home >> Find products >> NPN Epitaxial Silicon Transistor Contents


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PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 NPN transistor ECB TO-92 Bc637 BC635 ECB transistor C 639 W transistor BC637 complement
2002 - bc639

Abstract: 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild
Text: BC635/637/ 639 BC635/637/ 639 Switching and Amplifier Applications · Complement to BC636/638/640 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum , BC635/637/ 639 Typical Characteristics 200 IB = 1.8 mA 1000 IC[mA], COLLECTOR CURRENT , Semiconductor Corporation Rev. B2, December 2002 BC635/637/ 639 Package Dimensions TO , INVESTORS | Sitema MY FA Home >> Find products >> NPN Epitaxial Silicon Transistor Contents


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PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild
2002 - bc635

Abstract: transistor C 639 W
Text: BC635/637/ 639 BC635/637/ 639 Switching and Amplifier Applications · Complement to BC636/638/640 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum , BC635/637/ 639 Typical Characteristics 200 IB = 1.8 mA 1000 IC[mA], COLLECTOR CURRENT , Semiconductor Corporation Rev. B2, December 2002 BC635/637/ 639 Package Dimensions TO , INVESTORS | Sitema MY FA Home >> Find products >> NPN Epitaxial Silicon Transistor Contents


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PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc635 transistor C 639 W
1997 - NEC 2905

Abstract: NEC 1357 2SC4228 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC
Text: DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier. It is suitable for a high density surface mount assembly since the 2.1 ± 0.1 transistor has been applied super mini , .105 .112 .121 .128 .135 .140 .145 .153 .161 .163 .175 84.1 77.2 67.9 63.9 63.9 60.0


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PDF 2SC4228 2SC4228 NEC 2905 NEC 1357 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC
1999 - bc736

Abstract: transistor C 639 W bc639 BC635 BC637
Text: BC635/637/ 639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 · Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS (TA=25°C) ° Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage Symbol : BC635 : BC637 : BC639 : BC635 : BC637 : BC639 : BC635 : BC637 : BC639 Emitter Base Voltage Collector , BC635/637/ 639 NPN EPITAXIAL SILICON TRANSISTOR TRADEMARKS The following are registered and


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PDF BC635/637/639 BC635/638/640 BC635 BC637 BC639 bc736 transistor C 639 W bc639 BC635 BC637
2001 - 104BLM35

Abstract: 104LHS35 104BLM 104BLM-3 nl6448bc33-46 nec 14 tv repair NL6448BC33 DF9C-31P-1V DF9-31S-1V BHR-03VS-1
Text: -46 is a TFT (thin film transistor ) active matrix color liquid crystal display (LCD) comprising , NL6448BC33-46 STRUCTURE AND FUNCTIONS A color TFT (thin film transistor ) LCD module is comprised of a TFT , ) INVALID D (X, Y) INVALID (Note X = 0 to 639 ) D (638, Y) D ( 639 , Y) INVALID Hsync 10CLK , 800 1 ; ; D ( 639 , Y) INVALID (Note Y = 0 to 479) NL6448BC33-46 (b) DE mode , ; ; ; ; R0-R5 G0-G5 B0-B5 D (0, Y) D (1, Y) INVALID D (X, Y) INVALID (Note X = 0 to 639 ) D


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PDF NL6448BC33-46 NL6448BC33-46 DE0202 104BLM35 104LHS35 104BLM 104BLM-3 nec 14 tv repair NL6448BC33 DF9C-31P-1V DF9-31S-1V BHR-03VS-1
1999 - 104LHS31

Abstract: 104PWRI NL6448BC33-31 104PWBR1 lcd backlight nec inverter 7 pin diagram NEC NL6448BC33-31 NEC color lcd DS2228 nec 14 tv diagram connector DF9 31 pin lcd
Text: -31 is a TFT (thin film transistor ) active matrix color liquid crystal display (LCD) comprising , © 1999 NL6448BC33-31 STRUCTURE AND FUNCTIONS A color TFT (thin film transistor ) LCD module is , , , , , R0-R5 G0-G5 B0-B5 INVALID D (0, Y) D (1, Y) D (X, Y) INVALID (Note X = 0 to 639 ) D (638, Y) D ( 639 , Y) INVALID Hsync 10CLK (MIN.) 1CLK 4CLK (MIN.) 144CLK (fixed) 640CLK , ( 639 , Y) INVALID (Note Y = 0 to 479) NL6448BC33-31 (b) DE mode Vsync 1H tvp tvb


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PDF NL6448BC33-31 NL6448BC33-31 104LHS31 104PWRI 104PWBR1 lcd backlight nec inverter 7 pin diagram NEC NL6448BC33-31 NEC color lcd DS2228 nec 14 tv diagram connector DF9 31 pin lcd
2002 - transistor C 639 W

Abstract: No abstract text available
Text: BC635/637/ 639 BC635/637/ 639 Switching and Amplifier Applications · Complement to BC636/638/640 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER Parameter Collector-Emitter Voltage at RBE=1K : BC635 , BC635/637/ 639 Typical Characteristics 200 IB = 1.8 mA 1000 IC[mA], COLLECTOR CURRENT , Semiconductor Corporation Rev. A2, August 2002 BC635/637/ 639 Package Dimensions TO-92 4.58 ­0.15


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PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 transistor C 639 W
GSI510

Abstract: transistor C 639 W IGT5E10CS Bipolar Transistors
Text: 92GS-44006R1 The GSI510 and/or IGT5E10CS Series IGT" Transistor (Insulated Gate Bipolar Transistor ) is a , characteristics of the IGT™ Transistor are also similar to power MOSFETs. An important difference is the , °C offering extended power handling capability. The IGT™ Transistor is ideal for many high-voltage , ,618,872 4,620,211 4,631,564 4, 639 ,754 4, 639 ,762 4,641,162 4,644,637 4,682,195 4,684,413 4,717,679 4


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PDF GSI510 1GT5E10CS 92GS-44006R1 IGT5E10CS GSI510, IGT5E10CS transistor C 639 W Bipolar Transistors
1998 - NL6448AC33-27

Abstract: 104LHS29L e170632 104lhs nl6448AC33 DS2228 IL-310-T31S-VF ED-2522 DF9C-31P-1V DF9M-31
Text: -27 is a TFT (thin film transistor ) active matrix color liquid crystal display (LCD) comprising , -27 STRUCTURE AND FUNCTIONS A color TFT (thin film transistor ) LCD module is comprised of a TFT liquid crystal , (X, Y) INVALID (Note X = 0 to 639 ) , , D (638, Y) D ( 639 , Y) INVALID Hsync , 1 , , D ( 639 , Y) INVALID (Note Y = 0 to 479) 13 NL6448AC33-27 (b) DE mode , G0-G5 B0-B5 D (0, Y) D (1, Y) INVALID D (X, Y) INVALID (Note X = 0 to 639


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PDF NL6448AC33-27 NL6448AC33-27 104LHS29L e170632 104lhs nl6448AC33 DS2228 IL-310-T31S-VF ED-2522 DF9C-31P-1V DF9M-31
2001 - bc736

Abstract: BC635 BC637 BC639
Text: BC635/637/ 639 BC635/637/ 639 Switching and Amplifier Applications · Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER Units 45 60 100 V V V 45 60 100 , Semiconductor Corporation Units 100 V V MHz Rev. A1, June 2001 BC635/637/ 639 Typical , Fairchild Semiconductor Corporation Rev. A1, June 2001 BC635/637/ 639 Package Demensions TO


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PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc736 BC635 BC637 BC639
2000 - bc736

Abstract: bc635 BC637 BC639
Text: BC635/637/ 639 BC635/637/ 639 Switching and Amplifier Applications · Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER Units 45 60 100 V V V 45 60 100 , Semiconductor International Units 100 V V MHz Rev. A, February 2000 BC635/637/ 639 Typical , Fairchild Semiconductor International Rev. A, February 2000 BC635/637/ 639 Package Demensions TO


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PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc736 bc635 BC637 BC639
1999 - "LCD timing controller"

Abstract: 104LHS31 r 639 r 640 photodetector nec 104lhs NL6448AC33 NL6448AC33-29 104PWBR1 10.4-inch lcd Color active matrix tft lcd panel NEC lcd backlight inverter
Text: NL6448AC33-29 is a TFT (thin film transistor ) active matrix color liquid crystal display (LCD) comprising , © 1999 NL6448AC33-29 STRUCTURE AND FUNCTIONS A color TFT (thin film transistor ) LCD module is , INVALID INVALID Hsync R0-R5 G0-G5 B0-B5 (Note X = 0 to 639 ) , , INVALID D (0, Y) D (1, Y) D (X, Y) , , INVALID D (638, Y) D ( 639 , Y) Hsync 1CLK 144CLK (fixed , , Y) D (1, Y) Data Sheet EN0439EJ1V0DS00 16CLK , , 784 785 D ( 639 , Y) 800


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PDF NL6448AC33-29 NL6448AC33-29 "LCD timing controller" 104LHS31 r 639 r 640 photodetector nec 104lhs NL6448AC33 104PWBR1 10.4-inch lcd Color active matrix tft lcd panel NEC lcd backlight inverter
2002 - Not Available

Abstract: No abstract text available
Text: BC635/637/ 639 BC635/637/ 639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER Units 45 60 100 V V V 45 60 , Semiconductor Corporation Units 100 V V MHz Rev. B2, December 2002 BC635/637/ 639 Typical , ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 BC635/637/ 639 Package


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PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639
2002 - BC635

Abstract: bc639 BC637
Text: BC635/637/ 639 BC635/637/ 639 Switching and Amplifier Applications · Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER Units 45 60 100 V V V 45 60 100 , Semiconductor Corporation Units 100 V V MHz Rev. B2, December 2002 BC635/637/ 639 Typical , Fairchild Semiconductor Corporation Rev. B2, December 2002 BC635/637/ 639 Package Dimensions TO


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PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 BC635 bc639 BC637
2000 - NL6448BC33-31D

Abstract: No abstract text available
Text: NL6448BC33-31D is a TFT (thin film transistor ) active matrix color liquid crystal display( LCD) comprising , -31D STRUCTURE AND FUNCTIONS A color TFT (thin film transistor ) LCD module is comprised of a TFT liquid crystal , (X, 479) INVALID (Note: X = 0 to 639 ) INVALID Hsync R0 - R5 G0 - G5 B0 - B5 D (0, Y) D (1, Y) INVALID D (X, Y) INVALID D (638, Y) D ( 639 , Y) Hsync 1CLK 4CLK (min , 800 1 R0 - R5 G0 - G5 B0 - B5 INVALID D (0, Y) D (1, Y) D ( 639 , Y) INVALID (Note: Y


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PDF NL6448BC33-31D NL6448BC33-31D
1999 - Not Available

Abstract: No abstract text available
Text: DESCRIPTION NL6448AC33-27G is a TFT (thin film transistor ) active matrix color liquid crystal display (LCD , FUNCTIONS A color TFT (thin film transistor ) LCD module comprises a TFT liquid crystal panel structure , (Note: X = 0 to 639 ) INVALID Hsync R0 - R5 G0 - G5 B0 - B5 D (0, Y) D (1, Y) INVALID D (X, Y) INVALID D (638, Y) D ( 639 , Y) Hsync 1CLK 4CLK (min.) 10CLK (min.) 144CLK , - G5 B0 - B5 INVALID D (0, Y) D (1, Y) D ( 639 , Y) INVALID (Note: Y = 0 to 479) 13


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PDF NL6448AC33-27G NL6448AC33-27G
Not Available

Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB High Current Transistor , Data Sheet Page 1 of 5 SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638 , BC635_BC640Rev_4 030106E Continental Device India Limited Data Sheet Page 2 of 5 BC635, 637, 639 NPN , , 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be


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PDF BC635, BC636, 640Rev 030106E C-120
2006 - 639 TRANSISTOR PNP

Abstract: 638 transistor bc636 npn transistor bc640 transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 transistor bC640 OF CDIL BC636 BC639
Text: SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB High Current Transistor , SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package , Limited Data Sheet Page 2 of 5 BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package , _4 030106E Continental Device India Limited Data Sheet Page 3 of 5 BC635, 637, 639 NPN BC636


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PDF BC635, BC636, C-120 BC640Rev 030106E 639 TRANSISTOR PNP 638 transistor bc636 npn transistor bc640 transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 transistor bC640 OF CDIL BC636 BC639
2006 - Not Available

Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB High Current Transistor , Data Sheet Page 1 of 5 SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638 , BC635_BC640Rev_5 180712E Continental Device India Limited Data Sheet Page 2 of 5 BC635, 637, 639 NPN , PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For


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PDF BC635, BC636, 640Rev 180712E C-120
1994 - UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
Text: 6-39 1N4751A 6-24 1N5261B 6-11 1N5334B 6-39 1N4752A 6-24 1N5262B 6-11 1N5335B 6-39 1N4753A 6-24 1N5263B 6-11 1N5336B 6-39 1N4754A 6-24 1N5264B 6-11 1N5337B 6-39 1N4755A 6-24 1N5265B 6-11 1N5338B 6-39 1N4756A 6-24 1N5266B 6-12 1N5339B 6-39 1N4757A 6-24 1N5267B 6-12 1N5340B 6-39 1N4758A 6-24 1N5268B 6-12 1N5341B 6-39 1N4759A 6-24 1N5269B 6-12 1N5342B 6-39


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PDF
2002 - NL6448BC26-03

Abstract: transistor C 639 W
Text: PRINCIPLE NL6448BC26-03 module is composed of the amorphous silicon thin film transistor liquid crystal display (a-Si TFT LCD) panel structure with driver LSIs for driving the TFT (Thin Film Transistor ) array , (638,479) 0) 1) C( 639 , C( 639 , · ··· · C( 639 , Y) · · · C( 639 ,478) C( 639 ,479) 0) 1) (2) Scanning , (0,0) D (0,0) C ( 639 ,0) D ( 639 ,0) NEC C (0,479) D (0,479) C ( 639 ,479) D ( 639 ,479) Note1 Figure 1. Normal scan (DPSR: Low or Open) C (0,0) D ( 639 ,479) C ( 639 ,0) D (0,479) C (0,479) D


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PDF NL6448BC26-03 DOD-M-1191 NL6448BC26-03 transistor C 639 W
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