GN6020V4LSTL-E
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Renesas Electronics Corporation
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IGBT 600V 20A |
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GN6030V4LSTL-E
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Renesas Electronics Corporation
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IGBT 600V 30A |
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TTC5886A
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
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TTA2097
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Toshiba Electronic Devices & Storage Corporation
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PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
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GN6020V4LSTL
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Renesas Electronics Corporation
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IGBT 600V 20A |
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TPD4164F
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Toshiba Electronic Devices & Storage Corporation
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Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 |
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