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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor 4894 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1995 - DK 53 code transistor

Abstract: transistor 4894 41633 301 marking code PNP transistor 4044 for amplification philips 23 BP317 SC70-6 specification transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET PUMZ1 Transistor complementary pair Preliminary , specification Transistor complementary pair PUMZ1 FEATURES APPLICATIONS DESCRIPTION · Two , Per transistor , for the PNP transistor with negative polarity VCBO collector-base voltage open , specification Transistor complementary pair PUMZ1 LIMITING VALUES In accordance with the Absolute , transistor , for the PNP transistor with negative polarity VCBO collector-base voltage open emitter


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PDF SC70-6 SCD47 113062/1100/01/pp8 DK 53 code transistor transistor 4894 41633 301 marking code PNP transistor 4044 for amplification philips 23 BP317 SC70-6 specification transistor
1995 - 2108 npn transistor

Abstract: Dual General Purpose Transistors SC70-6 "Dual npn Transistor" philips 23 BP317 SC70-6 dual NPN Transistor 77 ic marking code sc70
Text: DISCRETE SEMICONDUCTORS DATA SHEET PUMX1 Dual NPN transistor Preliminary specification , specification Dual NPN transistor PUMX1 FEATURES APPLICATIONS DESCRIPTION · Two transistors in , DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO , Philips Semiconductors Preliminary specification Dual NPN transistor PUMX1 LIMITING VALUES In , . MAX. UNIT Per transistor VCBO collector-base voltage open emitter - 50 V VCEO


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PDF SC70-6 base218, SCD47 113062/1100/01/pp8 2108 npn transistor Dual General Purpose Transistors SC70-6 "Dual npn Transistor" philips 23 BP317 SC70-6 dual NPN Transistor 77 ic marking code sc70
1995 - "Dual PNP Transistor"

Abstract: Dual PNP Transistor 301 marking code PNP transistor philips 23 BP317 SC70-6 12NC philips PUMT1
Text: DISCRETE SEMICONDUCTORS DATA SHEET PUMT1 Dual PNP transistor Preliminary specification , specification Dual PNP transistor PUMT1 FEATURES APPLICATIONS DESCRIPTION · Two transistors in , DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO , Philips Semiconductors Preliminary specification Dual PNP transistor PUMT1 LIMITING VALUES In , . MAX. UNIT Per transistor VCBO collector-base voltage open emitter - -50 V


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PDF SC70-6 SCD47 113062/1100/01/pp8 "Dual PNP Transistor" Dual PNP Transistor 301 marking code PNP transistor philips 23 BP317 SC70-6 12NC philips PUMT1
1996 - BLT13

Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT13 UHF power transistor Preliminary specification , specification UHF power transistor BLT13 FEATURES DESCRIPTION · High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package. · High gain · , transistor BLT13 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , specification UHF power transistor BLT13 APPLICATION INFORMATION RF performance at Ts 60 °C in a


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PDF BLT13 SC08b OT96-1 MAM22P SCDS48 127061/1200/02/pp8 BLT13 BP317
1996 - 358 SMD transistor

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification , transistor FEATURES · SMD encapsulation · Gold metallization ensures excellent reliability. APPLICATIONS · , DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 2 3 e , specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System , soldering point of the collector pin. 2. Transistor mounted on a printed-circuit board measuring 40 × 40 × 1


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PDF BLT80 BLT80 OT223 MAM043 cir2724825 SCDS48 127061/1200/02/pp12 771-BLT80-T/R 358 SMD transistor
1996 - PHN110

Abstract: MBG749
Text: DISCRETE SEMICONDUCTORS DATA SHEET PHN110 N-channel enhancement mode MOS transistor , transistor PHN110 FEATURES DESCRIPTION · High speed switching N-channel enhancement mode MOS transistor in an 8-pin plastic SO8 (SOT96-1) package. · No secondary breakdown · Very low on-resistance , transistor PHN110 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , specification N-channel enhancement mode MOS transistor PHN110 THERMAL CHARACTERISTICS SYMBOL


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PDF PHN110 OT96-1) SCDS48 117061/1200/ed/pp12 PHN110 MBG749
1996 - 4894

Abstract: SMD ic catalogue BLT80 KM10 4312 020 36640
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification , transistor BLT80 FEATURES · SMD encapsulation · Gold metallization ensures excellent reliability. 4 , DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 , transistor BLT80 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , pin. 2. Transistor mounted on a printed-circuit board measuring 40 × 40 × 1 mm, collector pad 35 × 17


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PDF BLT80 OT223 OT223 MAM043 SCDS48 127061/1200/02/pp12 4894 SMD ic catalogue BLT80 KM10 4312 020 36640
1996 - 2222 730

Abstract: BLT81
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification , power transistor BLT81 FEATURES · SMD encapsulation · Gold metallization ensures excellent , communication band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a , 2 Philips Semiconductors Product specification UHF power transistor BLT81 LIMITING , VALUE UNIT 32 K/W Philips Semiconductors Product specification UHF power transistor


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PDF BLT81 OT223 OT223 MAM043 SCDS48 127061/1200/02/pp12 2222 730 BLT81
1996 - BLT81

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification , Semiconductors Product specification UHF power transistor BLT81 FEATURES · SMD encapsulation · Gold , transistor encapsulated in a plastic SOT223 SMD package. 1 PINNING - SOT223 2 3 MAM043 - 1 , power transistor BLT81 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC , Product specification UHF power transistor BLT81 CHARACTERISTICS Tj = 25 °C unless otherwise


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PDF BLT81 SC08b OT223 OT223 MAM043 SCDS48 127061/1200/02/pp12 BLT81
1996 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BLT81 UHF power transistor Product specification Supersedes , transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability , band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic , . 77 2 Gp (dB) Philips Semiconductors Product specification UHF power transistor , Semiconductors Product specification UHF power transistor BLT81 CHARACTERISTICS Tj = 25 °C unless


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PDF BLT81 OT223 OT223 MAM043 SCDS48 127061/1200/02/pp12
1996 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BLT80 UHF power transistor Product specification Supersedes , transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability , band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic , Semiconductors Product specification UHF power transistor BLT80 LIMITING VALUES In accordance with , characteristics” 1. Ts is the temperature at the soldering point of the collector pin. 2. Transistor mounted on


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PDF BLT80 OT223 OT223 MAM043 SCDS48 127061/1200/02/pp12
1996 - c39 transistor

Abstract: transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product , specification UHF push-pull power transistor BLV950 FEATURES DESCRIPTION · Internal input and , transistor is encapsulated in a 4-lead SOT262A2 flange envelope with 2 ceramic caps. The flange provides , transistor BLV950 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Per transistor section unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX


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PDF BLV950 SC08b OT262A2 SCDS47 127061/1100/02/pp16 c39 transistor transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37
1994 - BFG505W

Abstract: No abstract text available
Text: transistor Product specification File under Discrete Semiconductors, SC14 August 1995 Philips Semiconductors Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES · , NPN 9 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System , transistor CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL V(BR)CBO V(BR)CES V(BR)EBO ICBO , specification NPN 9 GHz wideband transistor BFG505W BFG505W/X; BFG505W/XR handbook, halfpage 250


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PDF BFG505W BFG505W/X; BFG505W/XR SCD35 123065/1500/02/pp16
1994 - 2222 031 capacitor philips 2222 424

Abstract: 2222 031 capacitor philips BLF247B
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF247B VHF push-pull power MOS transistor Product , VHF push-pull power MOS transistor FEATURES BLF247B PIN CONFIGURATION · High power gain · , view MAM098 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor , provides the common source connection for the transistor . PINNING - SOT262A1 PIN DESCRIPTION 1 , specification VHF push-pull power MOS transistor BLF247B LIMITING VALUES In accordance with the


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PDF BLF247B MAM098 OT262A1 SCD34 846915/1500/01/pp16 2222 031 capacitor philips 2222 424 2222 031 capacitor philips BLF247B
2001 - 74HC04 NOT GATE datasheet

Abstract: optocoupler NPN 74HC04 HC04 optocoupler base resistor phototransistor with amplifier "linear output" Optocoupler with transistor
Text: photocurrent which is amplified by the current gain (HFE) of the transistor . The gain of the optocoupler is , to the LED forward current. The current gain (HFE) of the transistor is dependent upon the voltage , . The first CTR, the non-saturated or linear operation of the transistor , is the most common , transistor is operated in the linear mode. Normalized CTRCE(SAT) is illustrated in Figure 2. The saturated , (- ­ 50 µA 0.072 ) 2 mA 100% RL(MIN) = 48.94 K, select 51 K ±5% VCC The switching speed of


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PDF 74HC04 1-888-Infineon 74HC04 NOT GATE datasheet optocoupler NPN 74HC04 HC04 optocoupler base resistor phototransistor with amplifier "linear output" Optocoupler with transistor
1995 - xl 6009

Abstract: MLC660 MLC662 L6 PHILIPS 4894 BLV910
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV910 UHF power transistor Product specification , transistor BLV910 FEATURES DESCRIPTION · Internal input matching to achieve high power gain and easy design of wideband circuits NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a , waste. 1995 Apr 11 2 Philips Semiconductors Product specification UHF power transistor


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PDF BLV910 OT171 SCD38 123052/1500/01/pp12 xl 6009 MLC660 MLC662 L6 PHILIPS 4894 BLV910
1994 - BFG520W

Abstract: No abstract text available
Text: transistor Product specification File under Discrete Semiconductors, SC14 August 1995 Philips Semiconductors Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES · , Product specification NPN 9 GHz wideband transistor LIMITING VALUES In accordance with the Absolute , NPN 9 GHz wideband transistor CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL V(BR , Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG520W BFG520W/X


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PDF BFG520W BFG520W/X; BFG520W/XR SCD33 123065/1500/02/pp16
1995 - film dielectric trimmer PTFE

Abstract: 2222 031 capacitor philips 2222 424 BLV934 xl 6009 gp 722 MLC679
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV934 UHF power transistor Product specification , transistor BLV934 FEATURES DESCRIPTION · Internal input matching to achieve high power gain and easy design of wideband circuits NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has internal input matching by means of MOS capacitors and is , specification UHF power transistor BLV934 LIMITING VALUES In accordance with the Absolute Maximum


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PDF BLV934 OT171 SCD38 123052/1500/01/pp12 film dielectric trimmer PTFE 2222 031 capacitor philips 2222 424 BLV934 xl 6009 gp 722 MLC679
1995 - xl 6009

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV920 UHF power transistor Product specification File , Product specification UHF power transistor FEATURES · Internal input matching to achieve high power , silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is , waste. 1995 Apr 10 2 Philips Semiconductors Product specification UHF power transistor , Product specification UHF power transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified


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PDF BLV920 SC08a BLV920 OT171 SCD38 123052/1500/01/pp12 xl 6009
1994 - ua 722 fc

Abstract: No abstract text available
Text: transistor Product specification File under Discrete Semiconductors, SC14 August 1995 Philips Semiconductors Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES · , Semiconductors Product specification NPN 5 GHz wideband transistor LIMITING VALUES In accordance with the , specification NPN 5 GHz wideband transistor CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL , specification NPN 5 GHz wideband transistor BFG25AW BFG25AW/X; BFG25AW/XR handbook, halfpage 100


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PDF BFG25AW BFG25AW/X; BFG25AW/XR OT343 OT343R BFG25AW/X ua 722 fc
1998 - AN 6752

Abstract: msc925 AN 6752 japan
Text: epilayer substrate MSC319 base emitter base collector Existing advanced bipolar transistor , process makes use of an advanced, self-aligned transistor technology that is vastly superior to existing , emitter on transition frequency. · Higher power gain The self-aligned transistor structure significantly , collector MSC317 n+ p Self-aligned double-polysilicon buried npn transistor Fig.1 In the advanced , frequency and low feedback capacitance increase the transistor 's input impedance, simplifying matching to


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PDF NIJ004 SCS60 AN 6752 msc925 AN 6752 japan
1994 - BF 212 transistor

Abstract: BFG67W
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor , wideband transistor FEATURES MARKING · High power gain TYPE NUMBER · Low noise figure , BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor LIMITING VALUES In accordance with the Absolute , Semiconductors Product specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor , specification BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor MBB301 MLB984 1 120


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PDF BFG67W BFG67W/X; BFG67W/XR BFG67W/X SCD34 BF 212 transistor BFG67W
static characteristics of optocoupler

Abstract: OPTOCOUPLER 10v output 74HC04 NOT GATE datasheet 74HC04 optocoupler IL optocoupler base resistor R/optocoupler base resistor COUPLER CB HC04 phototransistor with amplifier "linear output"
Text: photocurrent which is amplified by the current gain (HFE) of the transistor . The gain of the optocoupler is , to the LED forward current. The current gain (HFE) of the transistor is dependent upon the voltage , . The first CTR, the non-saturated or linear operation of the transistor , is the most common , CTRCE operation of the coupler as a function of LED current and ambient temperature when the transistor , -(0.072 ) 2 mA - ­ 50 µ A 100% RL(MIN) = 48.94 K, select 51 K ± 5


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PDF 74HC04 static characteristics of optocoupler OPTOCOUPLER 10v output 74HC04 NOT GATE datasheet 74HC04 optocoupler IL optocoupler base resistor R/optocoupler base resistor COUPLER CB HC04 phototransistor with amplifier "linear output"
1994 - BFG520W

Abstract: scd33 DIN45004B
Text: transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors July , wideband transistor FEATURES MARKING · High power gain TYPE NUMBER · Low noise figure , /XR NPN 9 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating , Product specification BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor CHARACTERISTICS , Product specification BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor MLB807 150


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PDF BFG520W BFG520W/X; BFG520W/XR BFG520W/X SCD33 BFG520W scd33 DIN45004B
74HC04

Abstract: HC04 static characteristics of optocoupler
Text: energy into a photocurrent which is amplified by the current gain (HFE) of the transistor . The gain of , phototransistor collector current to the LED forward current. The current gain (HFE) of the transistor is , complete the interface design. The first CTR, the non-saturated or linear operation of the transistor , is , when the transistor is operated in the linear mode. Normalized CTRCE(SAT) is illustrated in Figure 2 , (NFCE(SAT) found in Figure 2. (2) RL(MIN) = 48.94 K, select 51 K ± 5 % The switching speed of


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PDF 24-Nov-03 74HC04 HC04 static characteristics of optocoupler
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