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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor 3Ft Datasheets Context Search

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A2168

Abstract: MARKING 3FT
Text: NEC DATA SHEET ELECTRON DEVICE SILICON TRANSISTOR GA1 L3Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR PACKAGE DIMENSIONS in millimeters 2.1+0.1 CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current 'CBO 100 nA VCB = 50 V, |E = 0 DC Current Gain hFEr 135 450 600 VCE = 5.0 V, lC = 5.0 m A DC Current Gain hFE2# 100 380 VCE = 5.0 V, lc = 50 mA , 135 to 270 L37 2n0 to 400 I 3ft 300 to Ron NEC cannot assume any responsibility for any circuits


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PDF 100mA 1988M A2168 MARKING 3FT
TA7362P

Abstract: 16-SUPPLY ta7362 je 371 Transistor muting
Text: during scanning of D.T.S (Digital Tuning System). This IC contains muting transistor for two channels. ' , capacitor located from ( I ) to ( J ) PIN.) "ON" resistance of muting transistor is very small. (Muting attenuation level is large.) R0N= 3ft (Typ.) Small number of externally mounted parts. Operating supply voltage , potential of muting transistor Qi and Q2 in the IC is fixed at 2Vjje, each permissive input voltage of pins , turned ON, the muting transistor in the IC are turned ON to carry out the muting operation. The muting


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PDF QD17E11 TA7362P TA7362P T-77-21 16-SUPPLY ta7362 je 371 Transistor muting
transistor WFA

Abstract: B408 diode 6DI1 B408 B-408 diode Q005 6DI10A-120 t930 t460 transistor t460
Text: 6DI10A-120(ioa) POWER TRANSISTOR MODULE : Features • 7 «J— Jfc'f y "siV^Jr— Krtà , DC ic 10 A 1ms icp 20 A DC -ic 10 A * - * ® at DC le 1.5 A 1ms ibp 3 A or>e Transistor Pc , 100 mA □ ? • X £ -y ^HIJflJE — vce —Ic= 10a 2.0 V ¡1 at * 3ft m li * hFE le = 10a, Vce = , Symbols Test Conditions Min Typ Max Units & s RlhQ-c) Transistor . 1.25 °C/W & & ta Rthû-c) Diode , RtMi-c, Cc/w] o.i 10'' ICT' 10*' fli Hi (secJ ( Transient Thermal Resistance ( Transistor ) 10 0


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PDF 6DI10A-120 E82988 I95t/R89) Shl50 transistor WFA B408 diode 6DI1 B408 B-408 diode Q005 t930 t460 transistor t460
P460

Abstract: T151 T810 transistor and schematic symbols FA-MT
Text: ETM36-O3O(200A) POWER TRANSISTOR MODULE - Features • High Current • hFE^'jiju High DC , * 9 >JÍE DC Ib 10 A 1ms Ibp 20 ■A on» Transistor Pc 1000 W Pc - W $£r "a* »(S Tj + , □ u ï ? L ^ M M 3ft Icbo Vceo = 400V 1 mA I i 7 í' L <> ® 1 Ä Iebo Vebo=6V 200 mA □ U , Symbols Test Conditions Min Typ Max Units Üft ffi Í/L Rth(j-c) Transistor 0125 °C/W m s ta Rth(j-c , Transient Thermal Resistance ( Transistor ) -


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PDF ETM36-O3O l95t/R89 Shl50 P460 T151 T810 transistor and schematic symbols FA-MT
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5360 COLOR TV CHROMA OUTPUT APPLICATIONS 2SC5360 VCEO=300V Cob = 5.0pF (Typ.) fT =100MHz (Typ.) RATING 300 300 150 50 2,0 12.5 150 -5 5 -1 5 0 UNIT V V V mA mA W °C Weight : 1.7g MIN. TYP. MAX. UNIT 1.0 - - 1,0 ¡J.K 300 - V - An 1H(\ 1 1.0 V - - - I V - _L · · · High Voltage Small Collector Output Capacitance High , , semiconductor jjowjraf jn £ 3ft m a l f u o r It is the responsibility of the buyer, when utilizing TOSHIBA


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PDF 2SC5360 100MHz
Not Available

Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2SD2248 2SD2248 H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS FOR INDUCTIVE LOAD DRIVE 5.1 MAX. U nit in mm High DC Current Gain : hFE = 2000 (Min.) (VCE = 2V, IC = 1A) Low Saturation Voltage : VCE(sat) = 1.5V (Max.) (IC = 1A, IB = lm A) Built-in Zener Diode between Collector and Base M A X IM U M RATINGS (Ta : = 25 , and the reliability of its products. Nevertheless, semiconductor jjowjraf jn £ 3ft m a l f u o r


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PDF 2SD2248 O-92MOD
Not Available

Abstract: No abstract text available
Text: T O SH IB A TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE 2SC4203 Al 0 3 VIDEO OUTPUT FOR HIGH DEFINITION VDT HIGH SPEED SWITCHING APPLICATIONS t · · t High Transition Frequency : fr = 400MHz (Typ.) (VCE = 10V, Iß -70mA) Low Output Capacitance : C0b = 5pF (Max.) (V(3 B = 30V) High Voltage ; V CEO = 15QV High Power Dissipation : Pc = 10W RATING 180 150 5 0.3 0.5 0.2 10 1.0 150 -5 5 -1 5 , £ 3ft rri3 ! f u o r f3j 961001EAA1 I TOSHIBA is continually working to improve the quality and


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PDF 2SC4203 400MHz --70mA)
LM2937

Abstract: LM2937ET-10 LM2937ET-12 LM2937ET-15 LM2937ET-5 LM2937ET-8 T03B LM253
Text:  National Semiconductor IO <0 CO —J LM2937 500 mA Low Dropout Regulator General Description The LM2937 is a positive voltage regulator capable of supplying up to 500 mA of load current. The use of a PNP power transistor provides a low dropout voltage characteristic. With a load current of , ESR requirements. The LM2937 is stable for all ESR below 3ft . This allows the use of low ESR chip , of 0.5V at full rated load current ■Wide output capacitor ESR range, up to 3ft ■Internal


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PDF LM2937 TL/H/11280-4 LM2937 tl/h/11280-1 LM2937ET-10 LM2937ET-12 LM2937ET-15 LM2937ET-5 LM2937ET-8 T03B LM253
NPN Transistor 5A 400V

Abstract: No abstract text available
Text: T O SH IB A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5266A SWITCHING REGULATOR APPLICATIONS 2SC5266A HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS · · t Excellent Switching Times : ^ = 0.5^3 (M ax.), t f = 0 .3 /us (Max.) High Collector Breakdown Voltage ; Vc e O = 400V High DC Current Gain : hFE = 20 (Min.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC , its products. Nevertheless, semiconductor jjowjraf jn £ 3ft rri3 !f u or f3 j\ to thsir ifthsrorit


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PDF 2SC5266A 961001EAA1 NPN Transistor 5A 400V
2DI5OZ-12O

Abstract: B381 IB07
Text: 2DI5OZ-12O(50A) POWER TRANSISTOR MODULE ' Features • B Biffi High Voltage • U Krt/fc , 3 A 1ms Ibp 6 A one Transistor ' Pc . 400 W two Transistors Pc ' 800 W îi "ê" DB uSa. ßt , Characteristics Items Symbols Test Conditions Min Typ Max Units m s ut Rth(j-c) Transistor 0.31 °C/W & , ? ? Ic Ca) IXIii-? DC Current Gain 100 50 30 □ k 10 ? ? ® 5 ; 3ft 3 (A] 05 0.3 , Resistance ( Transistor ) 10° m !qs R|h(i-cl Ctc/W) B$ W t [sec) Transient Thermal Resistance (Diode


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PDF 2DI5OZ-12O E82988 l95t/R89 Shl50 B381 IB07
DI200

Abstract: 200a liu 1DI200ZP-120 M114 T151 T460 B327
Text: 1DI200ZP-120Î200A) «± s TRANSISTOR MODULE WM^fè : Outline Drawings liiJI , 200 A DC le 12 A lms Ibp 24 A =1 u fi fi m 9k Transistor Pc 1400 W ftwv^i— m* Pd 100 W oft , Symbols Test Conditions Min Typ Max Units JSv ffi. tit Rth(j-e) Transistor . , . i • ; 0.089 °c/w & , 3ft & ii RlXc-<) With Thermal Compound 0.03 °c/w IttttAtt ■Characteristics 3000 1000 =1 u , "' 10° m K t [sec] »it ( h 7 ^ * *) Transient Thermal Resistance ( Transistor ) o. 5 Rihii-c) 1 (1C


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PDF 1DI200ZP-120Ã 26-36kg E82988 19S24% I95t/R89) Shl50 DI200 200a liu 1DI200ZP-120 M114 T151 T460 B327
2009 - Not Available

Abstract: No abstract text available
Text: transistor Product data sheet Supersedes data of 1997 Jul 09 1999 Apr 26 NXP Semiconductors Product data sheet PNP general purpose double transistor FEATURES BC857BS PINNING • Low , 5 5 4 4 TR2 DESCRIPTION TR1 PNP double transistor in an SC-88; SOT363 plastic , NUMBER Fig.1 MARKING CODE BC857BS 3Ft Simplified outline (SC-88; SOT363) and symbol , CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter â


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PDF MBD128 BC857BS 115002/00/02/pp7
2009 - sot363 3ft

Abstract: 3Ft SOT363 nxp marking code SOT363 BC847BS BC857BS
Text: double transistor Product data sheet Supersedes data of 1997 Jul 09 1999 Apr 26 NXP Semiconductors Product data sheet PNP general purpose double transistor FEATURES BC857BS PINNING , 6 6 5 5 4 4 TR2 DESCRIPTION TR1 PNP double transistor in an SC-88; SOT363 , TYPE NUMBER Fig.1 MARKING CODE BC857BS 3Ft Simplified outline (SC-88; SOT363) and , PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open


Original
PDF MBD128 BC857BS 115002/00/02/pp7 sot363 3ft 3Ft SOT363 nxp marking code SOT363 BC847BS BC857BS
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2SJ105 i <; 1 1 n s FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS 4.2M A X. Unit in mm High Breakdown Voltage : VQ£)g = 50V Tn oo n ^ A Ì M a v ì' f no ci = 3ft High Input Impedance -v jro o= 1 -'V -u - « VI ./ Low Rd s (ON) : r DS (ON) = 27on (Typ-) 2SK330 Small Package 0 .5 5 M A X . 0.4 .1.27,1.27, I- M 1 2 3 L 254 MAXIMUM


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PDF 2SJ105 2SK330 13RAIN
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2SJ103 i <; 11 n 3 FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS .5.1 M AX. Unit in mm · · · · High Breakdown Voltage : VQ£)g = 50V Tn oo n ^ A Ì M a v ì' f no ci = 3ft High Input Impedance -'V -u - « VI ./ -v jro o= 1 Low Rd s (ON) : r DS (ON) = 27on (Typ-) 2SK246 0.55 M AX. 0.45 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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PDF 2SJ103 2SK246 SC-43
1Ft TRANSISTOR

Abstract: 100-G1000 T607 TRANSISTOR 1Ft OC201 Wat70 oc 502 74 C 909 T640 code 74w
Text: SINGLE-TURN TRIMMERS "Tji m 1 ii JlWiPtafri MODEL Description Element Technology Specifications, Ordering Information 80 TO-9 Transistor Case Single Turn Wirewound Page 15 75 « 1/4" Round or Square Single Turn Cermet Page 14 63 * 3/8* Square Single Turn Cermet Page 12 84 * 1/2* Round Single Turn Wirewound Page 15 ELECTRICAL Resistance: Range, Ohms Tolerance, % TC, PPM / °C Power Rating: Watts at °C , ac 1,000Mft Greater of 3% Rt or 3ft 10ftto2Mft ±10% ±100,100ft 100ft


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PDF 20Kft Wat50Â 10ftto2Mft 000Mft 20Kfl 50Kfl 100KH 500Kil 5D1b57A 00D17ti3 1Ft TRANSISTOR 100-G1000 T607 TRANSISTOR 1Ft OC201 Wat70 oc 502 74 C 909 T640 code 74w
transistor 2sc5386

Abstract: 2sc5386
Text: TOSHIBA TOSHIBA TRANSISTOR 2SC5386 i HIGH SPEED SWITCHING APPLICATIONS <;r * 3ft & SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV .15.5 + 0.5 Unit in mm . 0 3 .6 ± 0 .3 3.0 ±0.3 & · · · · VCB0 = 1500V High Voltage Low Saturation Voltage VCE (sat) = 3V (Max.) High Speed tf=0.15 fcs (Typ.) Collector Metal (Fin) is Fully Covered with Mold Resin SYMBOL VCBO VfJEO Ve BO Ic ÏCP ÏR PC Ti Tst K RATING 1500 600 5 8 16 4 50


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PDF 2SC5386 transistor 2sc5386 2sc5386
Not Available

Abstract: No abstract text available
Text: f i t ' l l Û3 SINGLE-TURN TRIMMERS 80 Description TO-9 Transistor Case Single Turn Element Technology 75 * CO MODEL 63 * 1/4” Round or Square Single Turn 3/8* Square Single Turn 1/2' Round Single Turn Wirewound Cermet Cermet Wirewound Page 15 Page 14 Page 12 Page 15 10ft to 20Kft ± 5% ± 50 10ft to 2M il ±10% ±100 10ft to , ,000Mft 100ftENR Greater of 3% Rt or 3ft Greater of 2% Rt or 2ft MECHANICAL Stop Strength


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PDF 20Kft 100ft 100ft Code---------84 OGG17b4
diode js7

Abstract: Transistor B123 Transistor DF- RO DF RV transistor transistor sit R/smd diode js7 tr/4114R-003-R1/diode js7
Text: 2DI3OOA-O5O(300A) POWER TRANSISTOR MODULE : Features Ifl^^ii : Outline Drawings High , "V x M DC Ib 10 A 1ms Ibp 20 A one Transistor Pc 1200 W two Transistors Pc 2400 W fê o" SP um , Conditions Min Typ Max Units m is jit Rih(j-c) Transistor 0.1 "C/W & s tjt Rth(j-c) Diode 0.31 °c/w & , ) Base and Collector Saturation Voltage 600 □ 500 u ? 9 400 3ft (A) 300 1 200 100 0 , O.OI I0" IO"2 Hi M t [sec) IO" Transient Thermal Resistance ( Transistor ) 200 I00


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PDF E82988 diode js7 Transistor B123 Transistor DF- RO DF RV transistor transistor sit R/smd diode js7 tr/4114R-003-R1/diode js7
Not Available

Abstract: No abstract text available
Text: +125°C Thermal Characteristics1 85°C/W 0JC 180 mW Active Transistor Power Dissipation 15 , Intercept Point 40 3ft F m ■Q 36 Û. 34 32 100 Frequency, M Hz 200 1-113 4447SÃ


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PDF
MRFA2604

Abstract: data sw 3205 transistor cq 529 class c tuned amplifier
Text: flange of the transistor ). (2) Tuned in the factory for optimum thermal correction @ 25°C. (3) Thermal , 50 60 70 80 TRANSISTOR FLANGE TEMPERATURE (°C) TRANSISTOR FLANGE TEMPERATURE (°C) Figure 1 , Depending on the tem perature of the amplifier and of the RF transistor , this value can be slightly , 2.740 0.945 1.244 1.276 4.404 v w 111.85 111.6 3.6 4, 3ft 4.386 ft Y 111.4 3.4


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PDF MRFA2604/D MRFA2604 MRFA2604 FA2604 2PHX3437 data sw 3205 transistor cq 529 class c tuned amplifier
a7y transistor

Abstract: trw RF POWER TRANSISTOR 6DI30M-050 2f k
Text: Drawings POWER TRANSISTOR MODULE ■irHI ' Features • @flShFE High DC Current Gain • ftiS^-y , 30 A 1ms I CP 60 A DC -Ic 30 A ^-xiil DC Ifl 1.8 A ■1ms I BP 3.6 A 3 one Transistor Pc 200 , (i-c) Transistor 0.625 °c/w m ts. ta Rth(J-c) Diode 2.0 °c /w m 1& ve Rth(c-r) With Thermal , 0.01 0.2 0.5 1 3 5 10 3U 50 100 300 500 1000 t (msec) Transient Thermal Resistance ( Transistor , ® W- tè m ¡SftlMft«!»}-* * * m m -it s » m 3ft do) D$ * m s ft ra o e JJ90 9 oo o o o


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PDF 6DI30M-050 a7y transistor trw RF POWER TRANSISTOR 2f k
aeir

Abstract: 1DI75H-120 M206 pohi 111-BA OA75 1DI75H-120C75A DF RV transistor
Text: 1DI75H-120(75A) POWER TRANSISTOR MODULE ' Features • iÛIÎŒ High Voltage • Including , =i U fi fi të* one Transistor Pc 500 : w fêc "a" nl$ /im. ßt Ti + 150 °C « # 's jm ■Tstg , ®^ Iebo VEBO= 10V 100 mA ¡i 3ft m m m M m hFE lc = 75A, Vce = 5V 70 - VcE(Sal) IC=75A,IB = , Conditions Min Typ Max Units & & fct Rth(j-c) Transistor 0.25 "C/W & % ta Rth(i-c) Diode (FRD, FWD) 0.6 , / / / / m M t (sec) Y =7 > * )4$tt Transient Thermal Resistance ( Transistor ) 0.1 ÄÄ7 M — 'J Kl


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PDF 1DI75H-120 aeir M206 pohi 111-BA OA75 1DI75H-120C75A DF RV transistor
B-286

Abstract: 11T1 2DI100Z-100 M210 k100a
Text: 2DH00Z-100(i OOA) : Outline Drawings POWER TRANSISTOR MODULE ■ftfi : Features â , (sus) — V . X s v ? • Vebo 10 V DC lc 100 A . 1ms ICR 200 A DC -lc 100 A — z W 3ft DC Ib 5 A. 1ms Ibp 10 A one Transistor Pc 800 w . two Transistors Pc 1600 W m Û su & ¡s Tj + 150 , Characteristics Items Symbols Test Conditions Min Typ Max Units & fô ta Rth(j-c) Transistor . . 0.156 , ] Switching Time 10"s I0"2 10_1 ffl t (sec] Transient Thermal Resistance ( Transistor ) Si ffl t [seeJ


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PDF 2DH00Z-100 E82988 B-286 11T1 2DI100Z-100 M210 k100a
transistor DF rz

Abstract: st m104 1DI200MA-050 M104 3SM diode XFRV 3SM* diode
Text: 1DI2OOMA-O5O(200A) POWER TRANSISTOR MODULE Features • hFE^'ift ^ High DC Current Gain â , □ U- ? ? 'XÌ7? |IIJ«Œ VcEO(SUS) 450 V lì • ^-^flfltJÏ Veso 10 V 3 u- ? * ® 3ft DC lc , Transistor Pc 1000 W Pc - W fè -â- «5 iä « T, + 150 •c « # a « Tstg — 40—1-125 Ä £ m , Items Symbols Test Conditions Min Typ Max Units m ffi Rtn(i-c) Transistor 0.125 °c/w m fô tt Rlh , 0.3 10* 10' 10* ^ ffl t (msec) 10" Transient Thermal Resistance ( Transistor ) B-59 -If r1


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PDF E82988 transistor DF rz st m104 1DI200MA-050 M104 3SM diode XFRV 3SM* diode
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