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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor 313 smd Datasheets Context Search

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TEMIC K153P

Abstract:
Text: 3 69 4 54141008 LED SMD ORANGE PLCC2 PACKAGE LED 8 313 8 54141012 LED SMD YELLOW PLCC2 PACKAGE LED 8 313 8 TEMIC Semiconductors 07.97 Technology , AOQ (ppm) 8 EFR (ppm) 313 LFR (FIT) 8 54141013 LED SMD HI INT RED PLCC2 PACKAGE LED 54141019 LED SMD PURE GREEN PLCC2 PACKAGE LED 8 313 8 65162 SRAM-2K*8 , plastic packages) Vibration (not plastic packages) ESD characterization Latch-up immunity SMD


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PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
2004 - transistor 313 smd

Abstract:
Text: dropout, the internal pass transistor is powered separately from the control circuitry. Furthermore, with , package power dissipation must be observed. Reflow: ( SMD styles only) (Note 1) Value 6.0 13 0 to 150 -65 , V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA to 3.0 A VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 10 mA to 3.0 A, with Remote Sense VCONTROL = 5.0 V, VPOWER = 3.3 V, DVOUT = +1.0% VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 100 mA VCONTROL =


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PDF CS5253B-8 CS5253B-8/D transistor 313 smd 5253B-8 Transistor D 2494 3pin transistor 313 D2Pak-5 D2Pak-5 Package EZ158
2005 - transistor 313 smd

Abstract:
Text: low dropout, the internal pass transistor is powered separately from the control circuitry , Lead Temperature Soldering: Reflow: ( SMD styles only) (Note 1) kV 230 Peak ESD Damage , , VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA to 3.0 A 2.463 (-1.5%) 2.5 2.538 (+1.5%) V Line Regulation VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA - 0.02 0.2 % Load Regulation VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 10 mA to 3.0 A, with Remote Sense -


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PDF CS5253B-8 CS5253B-8 CS5253B-8/D transistor 313 smd 5253B-8 CS5253 EZ1582
2001 - 3pin transistor 313

Abstract:
Text: low dropout, the internal pass transistor is powered separately from the control circuitry , ESD Damage Threshold Lead Temperature Soldering: Reflow: ( SMD styles only) (Note 1.) 1. 60 , , VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA to 3.0 A 2.463 (­1.5%) 2.5 2.538 (+1.5%) V Line Regulation VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA ­ 0.02 0.2 % Load Regulation VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 10 mA to 3.0 A, with Remote Sense ­


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PDF CS5253B-8 CS5253B r14525 3pin transistor 313 CS5253 CS5253B-8 EZ1582 transistor 313 smd
2002 - 3pin transistor 313

Abstract:
Text: low dropout, the internal pass transistor is powered separately from the control circuitry , Damage Threshold Lead Temperature Soldering: Reflow: ( SMD styles only) (Note 1) 1. 60 second , , VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA to 3.0 A 2.463 (­1.5%) 2.5 2.538 (+1.5%) V Line Regulation VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA ­ 0.02 0.2 % Load Regulation VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 10 mA to 3.0 A, with Remote Sense ­


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PDF CS5253B-8 CS5253B r14525 3pin transistor 313 CS5253 CS5253B-8 EZ1582 transistor 313 smd
2002 - Not Available

Abstract:
Text: very low dropout, the internal pass transistor is powered separately from the control circuitry , maximum above 183°C. *The maximum package power dissipation must be observed. Reflow: ( SMD styles only , 3.13 V to 5.5 V, IOUT = 10 mA to 3.0 A VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 10 mA to 3.0 A, with Remote Sense VCONTROL = 5.0 V, VPOWER = 3.3 V, VOUT = +1.0% VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 100 mA VCONTROL = 3.9 V, VPOWER = 3.13 V


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PDF CS5253B-8 CS5253B r14525
2009 - CS5253

Abstract:
Text: low dropout, the internal pass transistor is powered separately from the control circuitry , Reflow: ( SMD styles only) (Note 1) °C 2.0 ESD Damage Threshold °C -65 to +150 Storage , , VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA to 3.0 A 2.463 (-1.5%) 2.5 2.538 (+1.5%) V Line Regulation VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA - 0.02 0.2 % Load Regulation VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 10 mA to 3.0 A, with Remote Sense -


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PDF CS5253B-8 CS5253B-8 CS5253B-8/D CS5253 EZ1582 transistor 313 smd
2009 - Not Available

Abstract:
Text: low dropout, the internal pass transistor is powered separately from the control circuitry , 0 to 150 Lead Temperature Soldering: kV 230 Peak Reflow: ( SMD styles only) (Note 1 , , VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA to 3.0 A 2.463 (−1.5%) 2.5 2.538 (+1.5%) V Line Regulation VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA − 0.02 0.2 % Load Regulation VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 10 mA to 3.0 A, with Remote


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PDF CS5253B-8 CS5253Bâ
2004 - transistor 313 smd

Abstract:
Text: low dropout, the internal pass transistor is powered separately from the control circuitry , Range ESD Damage Threshold Lead Temperature Soldering: Reflow: ( SMD styles only) (Note 1 , Conditions Min Typ Max Unit Output Voltage VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 , VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA - 0.02 0.2 % Load Regulation VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 10 mA to 3.0 A, with Remote Sense - 0.04


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PDF CS5253B-8 CS5253B-8 CS5253B-8/D transistor 313 smd Transistor D 2494 5253B-8 D2Pak-5 Package 3pin transistor 313 CS5253 EZ1582
2004 - D2Pak-5 Package

Abstract:
Text: dropout, the internal pass transistor is powered separately from the control circuitry. Furthermore, with , , TJ Storage Temperature Range ESD Damage Threshold Lead Temperature Soldering: Reflow: ( SMD styles , Characteristic Test Conditions VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA to 3.0 A VCONTROL = 3.9 V to 12 V, VPOWER = 3.13 V to 5.5 V, IOUT = 10 mA VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 10 , , VPOWER = 3.13 V, IOUT = 100 mA VCONTROL = 3.9 V, VPOWER = 3.13 V, IOUT = 3.0 A VCONTROL = 3.9 V, VPOWER =


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PDF CS5253B-8 AND8036/D. D2Pak-5 Package transistor 313 smd
1999 - transistor 313 smd

Abstract:
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9515-100A BUK9615-100A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor , = 25 °C Tmb = 25 °C - - 55 75 53 313 230 175 A A A W °C TYP. MAX. UNIT , specification TrenchMOS transistor Logic level FET BUK9515-100A BUK9615-100A STATIC CHARACTERISTICS , A IF = 25 A; VGS = 0 V IF = 75 A; VGS = 0 V - 0.85 1.1 313 1.2 - A V V IF =


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PDF BUK9515-100A BUK9615-100A O220AB OT404 O220AB transistor 313 smd BUK9515-100A BUK9615-100A SC18
1996 - MOSFET TRANSISTOR SMD MARKING CODE nh

Abstract:
Text: -323 SMD package, for example, has been designed "upside down" in comparison with the conventional SOT , specific design makes them ideal for RF, control or switching functions. Miniaturization of SMD packages , islands act as carriers of twin-diode pairs or transistor chips (RF and LF types). Alignment of pins on , SMD packages SOT-23, SOT-143, SOT-323, SOT-343, SOT-363 and ultramini package (bottom right) for , . Thus a four-pin RF bipolar transistor in the SOT-343 package attains about 1 dB more gain at 1.8 GHz


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2004 - smd transistor 3d

Abstract:
Text: SKiiP 232 GD 120 ­ 313 CTV / SKiiP 232 GD 120 ­ 3D / 3DU CTVU SKiiP 342 GD 120 ­ 314 CTV / SKiiP 342 , reliability in application error outputs are short circuit proof (Error Transistor turns off for currents , from 0805 to 0603) less size, better noise immunity exchange of through hole components by SMD , Transistor turns off for currents higher than 15 mA) Vexternal Rpull_up ERROR Detection C=1nF +


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PDF Vexternal/15mA 625ns-750ns, 500ns-625ns) /2/FO/000/007/Rev smd transistor 3d skiip gb 120 TRANSISTOR 132-gd semikron skiip 1242 gb 120 skiip 342 GD 120 314 CTVU skiip gd 120 4d SMD Transistor semikron skiip 342 GDL semikron skiip 342 semikron skiip 3 gb 120
1997 - smd transistor marking A10

Abstract:
Text: pulldown transistor respectively. I2CEN = 0 Wait condition To force the M3L-master to interrupt , transistor restores SCL high level at the end of the WAIT-condition. tRWAIT 70 Voltage level VREF , (311) 625 (312) 1 2 3 4 5 6 310 311 312 313 314 315 316 , ) 1 2 3 4 5 6 Interlaced TCS 310 311 312 313 314 (1) 315 (2 , ) (624) 311 (312) (623) (625) 312 ( 313 ) (624) (626) 1 (1) 2 (2) 3 (3) 4 (4


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PDF GPL05099 GPD05262 P-SDIP-52-1 smd transistor marking A10 smd transistor marking A6 SDA 30C162 smd transistor wc TRANSISTOR SMD MARKING CODE 5b 30C162 smd code A9 3 pin transistor SMD transistor MARKING CODE 312 TRANSISTOR SMD MARKING CODE a6 diode smd marking BUF
siemens sda

Abstract:
Text: resistor or the impedance of the internal open drain pulldown transistor respectively. Wait condition , ¿DWAIT 500 750 ns An internal pullup transistor restores SCL high level at the end of the , iLJL±±±±rinnnniL±JuuL_n_n_ I ts o I 311 I 312 I 313 I 314 I 315 I 316 I 317 , u o 309 (310) I 311 I 312 I 313 I 314 I 315 I 316 I 317 (3 , Lines (1) (2) (3) (4) (5) (6) - 313 /312 Lines uTTTTTiJjjjJirrriru ir ¡sÂ


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PDF GPL05099 P-SDIP-52-1 siemens sda
SDA 30C162

Abstract:
Text: impedance of the internal open drain pulldown transistor respectively. Wait condition To force the , forced low for WAITcondition ¿D W AIT 500 750 ns An internal pullup transistor restores , J L J L J L J L I 310 I 311 I 312 313 I I 314 I 315 316 I I , TTTTTTTiJUüuuinnnnrnr^1“^ o " I 310 I 311 I 312 I 313 I 314 I 315 I 316 (2 , ® TJ-lfTTTTTlJÜLJLlJrTTTTTrTr I 309 (310) I 310 I 311 I (311)(312) ( 313 ) 312 (621) (622) (623) (624


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PDF fl23Sb05 P-SDIP-52-1 1524H SDA 30C162 siemens sda
1997 - SDA 30C162

Abstract:
Text: pulldown transistor respectively. I2CEN = 0 Wait condition To force the M3L-master to interrupt , transistor restores SCL high level at the end of the WAIT-condition. tRWAIT 70 Voltage level VREF , ) 625 (312) 1 2 3 4 5 6 310 311 312 313 314 315 316 317 , 3 4 5 6 Interlaced TCS 310 311 312 313 314 (1) 315 (2) 316 (3 , (312) (623) (625) 312 ( 313 ) (624) (626) 1 (1) 2 (2) 3 (3) 4 (4) 5 (5) 6


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PDF UES04659 GPL05099 P-LCC-68-1 GPD05262 P-SDIP-52-1 SDA 30C162 30C162 transistor 313 smd smd code A9 3 pin transistor gpl05 smd code book a7 transistor 30C16 P-SDIP-52-1 P-LCC-68-1 megatext
30C162

Abstract:
Text: capacitance and the external pullup resistor or the impedance of the internal open drain pulldown transistor , transistor restores SCL high level at the end of the WAIT-condition. SCL-pullup time at the end of , 313 I 314 I 315 I 316 I 317 I 318 I 319 I tes ii innnnnn ini nnnnnni ir1" I 622 I 623 I 624 I 625 I , 313 Ì 314 I 315 I 316 I 317 I 318 I 319 I _(1) (2) (3) (4) (5) (6) ™ imnnnnnn nnn rmTinrüL I 309 I 310 I 311 I 312 I 1 I 2 I 3 I 4 I 5 I 6 I -312/312 Lines (310) (311) (312) ( 313 ) (1) (2) (3) (4


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PDF P-SDIP-52-1 30C162 12x10 character TRANSISTOR SMD MARKING CODE kh "character rom" siemens marking code AE SMD Transistor S43 SMD smd marking KH siemens flash P-LCC-68-1 megatext
2008 - SN8P2624

Abstract:
Text: . . . . . 17 3.1.3 PCB1305 buttons . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , SI2315DS P-channel MOSFET (SOT23) Standard component - many suppliers D1 STPS340U SMD power , , SW1, LK1, U1, U2, U5, U8, D2, D3 Q3,Q4 N-channel MOSFET transistor - not fitted (Mod - link , D2 Surface mount LED (Yellow) Standard component - many suppliers L2 3.3 nH SMD inductor Standard component - many suppliers L1 5.6 nH SMD inductor Standard component - many suppliers


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PDF UM0528 VT5376 VT5376 VT5376V032 PCB1302 PCB1305 nRF2401 SN8P2624 2.4ghz receiver sn8p26 UM0528 laser LED transistor SMD p04 NRF2401AG USB-AM-S-F-W-TH HC49 smd
MRF6401

Abstract:
Text: Silicon RF Power Transistor The MRF6401 is d e signed fo r C lass A com m on e m itter, lin e a r pow er , Distribution. 0.5 W, 1.0 to 2.0 GHz RF LINEAR POWER TRANSISTOR · · MAXIMUM RATINGS Rating C , V, Capacitor 100 pF, ATC Chip Capacitor 100A Transistor , BCV62 R2 R3 R4 R5 R6 R7, R8 TL1 to TL11 TP1 470 Í2, Chip Resistor 0805 4.7 k£i, Chip Resistor 0805 8.2 k ii, Chip Resistor 0805 5 k ii, SMD , IS 21 I 28.4 17.1 9.10 6.15 4.65 3.73 3.13 2.60 2.30 2.06 1.98 1.88 i- * S 12 IS 12 I 0.0186


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PDF MRF6401/D MRF6401 MRF6401PHT/D 2PHX33566Q-1 1359A
1998 - 100 pf, ATC Chip Capacitor

Abstract:
Text: Silicon RF Power Transistor MRF6401 The MRF6401 is designed for Class A common emitter, linear , 2.0 GHz RF LINEAR POWER TRANSISTOR · Specified 20 Volts, 1.88 GHz Characteristics: Output Power , , Capacitor 10 µF, 16 V, Capacitor 100 pF, ATC Chip Capacitor 100A Transistor , BCV62 R2 R3 R4 R5 R6 , 0805 5 k, SMD Potentiometer 680 , Chip Resistor 0805 7.5 , Chip Resistor 0805 µStrip Lines; See , 0.758 159 3.13 52 0.0469 44 0.286 ­75 1200 0.758 160 3.02 52


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PDF MRF6401/D MRF6401 MRF6401 SOE200 100 pf, ATC Chip Capacitor motorola rf Power Transistor 305C BCV62 Motorola Potentiometer MRF64 TL11
1998 - transistor 313 smd

Abstract:
Text: TRANSISTOR LIFETIME BUY CASE 305C­02, STYLE 1 SOE200­PILL MAXIMUM RATINGS Rating Collector­Emitter , RF Power Transistor ELECTRICAL CHARACTERISTICS - continued (TC = 25°C unless otherwise noted , pF, ATC Chip Capacitor 100A Transistor , BCV62 R2 R3 R4 R5 R6 R7, R8 TL1 to TL11 TP1 470 , Chip Resistor 0805 4.7 k, Chip Resistor 0805 8.2 k, Chip Resistor 0805 5 k, SMD Potentiometer 680 , Chip , S11 |S11| 0.626 é ­118 S21 |S21| é 28.4 17.1 9.10 6.15 4.65 3.73 3.13 2.60 2.30 2.06 1.98 1.88 127 106


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PDF MRF6401/D MRF6401 MRF6401 SOE200 transistor 313 smd MRF640 smd transistor bcv62
2008 - Diode smd 5j

Abstract:
Text: power. A switching transistor is connected to PB6 on the ATmega3290P so that sufficient current can be , . The AVRRAVEN must then be supplied with the rated voltage of the relay. 3.13 Voltage Measurement , # 5 Ceramic capacitor, SMD 0402, NP0, 50V, +/0.25pF 1.2p 2 C201, C204 Ceramic capacitor, SMD 0402, NP0, 50V, +/-5% 12p 3 C413, C414, C415 Ceramic capacitor, SMD 0402, NP0, 50V, +/-10% 100p 1 C404 Ceramic capacitor, SMD 0402, X7R, 25V, +/-10% 4.7n 14


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PDF AVR2016: AT86RF230 8117D-AVR-04/08 Diode smd 5j A08 smd transistor TRANSISTOR D408 smd AT86RF230 PCB SMD C402 DIODE smd diode c411 D408 transistor smd c411 diode xtal016207 ATMEGA1284PV-10MU
1998 - 305C

Abstract:
Text: TRANSISTOR LIFETIME BUY · Specified 20 Volts, 1.88 GHz Characteristics: Output Power - 0.5 Watts , © Motorola, Inc. 1998 DEVICE DATA MRF6401 1 LAST ORDER 15SEP01 NPN Silicon RF Power Transistor , , 16 V, Capacitor 100 pF, ATC Chip Capacitor 100A Transistor , BCV62 R2 R3 R4 R5 R6 R7, R8 , k, SMD Potentiometer 680 , Chip Resistor 0805 7.5 , Chip Resistor 0805 µStrip Lines; See , 166 3.61 60 0.0415 41 0.294 ­68 1200 0.758 159 3.13 52 0.0469


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PDF MRF6401/D MRF6401 MRF6401 SOE200 305C BCV62 motorola Base Station motorola rf Power Transistor smd potentiometer TL11
100 pf, ATC Chip Capacitor

Abstract:
Text: Silicon RF Power Transistor MRF6401 The MRF6401 is designed for Class A common emitter, linear , W, 1.0 to 2.0 GHz RF LINEAR POWER TRANSISTOR · Specified 20 Volts, 1.88 GHz Characteristics , Capacitor 100A Transistor , BCV62 R2 R3 R4 R5 R6 R7, R8 TL1 to TL11 TP1 470 , Chip Resistor 0805 4.7 k, Chip Resistor 0805 8.2 k, Chip Resistor 0805 5 k, SMD Potentiometer 680 , Chip Resistor , 3.61 60 0.0415 41 0.294 ­ 68 1200 0.758 159 3.13 52 0.0469 44


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PDF MRF6401/D MRF6401 MRF6401 MRF6401PHTing MRF6401/D* 100 pf, ATC Chip Capacitor 305C BCV62 motorola base station 1995 MRF6401 PHOTOMASTER TL11
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