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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor 2sc 1586 Datasheets Context Search

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TRANSISTOR BC 157

Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES transistor bc 102 BC161 transistor f15n
Text:  2SC » ■û23SbOS ooomoa tjusieô^ . PNP Silicon Transistors SIEMENS AKTIEN6ESELLSCHAF Bc 160 , amplification group desired, a transistor of a current amplification group just available from stock will be delivered. 154 1584 A-II \ 2SC » ■023SbOS DOOmOT 1 ■SIEG t SIEMENS AKTIENGESELLSCHAF BC 160 BC 161 , mA) 'on 'off <500 <650 ns ns 1) The transistor is overloaded to such an extent that the DC , , = parameter (common emitter configuration) BC160, BC161 TO"6 10"* 10"3 KT2^ IO1 100a 156 . 1586


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PDF 23SbOS BC160 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16 Q62702-C228-P 160/BC140 Q62702-C228-S2 BC1611> TRANSISTOR BC 157 BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES transistor bc 102 BC161 transistor f15n
transistor BC 157

Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC161-10 BC transistor series TRANSISTOR
Text: 102 -k 1 0 3 m A 156 1586 A- 13 2sc d m fiEBStQS o a o m i i t «sieg , indication of the current amplification group desired, a transistor of a current amplification group just , mA) ton toff <500 <650 ns ns Z g M O O K S / f transistor is


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PDF BC160 BC160' 160/BC140 BC161/BC141 8C161 transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC161-10 BC transistor series TRANSISTOR
LA 7687 a

Abstract: No abstract text available
Text: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Package Dimensions Features ■High f j : (fy=3.5GHz typ). , Current DC Current Gain 270 Continued on next page. * : The 2SC 555I is classified by 50m A hp , - 158.6 0.990 79.4 0.088 12.0 0.755 -33.8 400 0.831 -169.5 0.845 69.2 , 0.234 - 158.6 1000 0.530 143.5 1.737 51.1 0.262 57.0 0.239 -160.3


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PDF ENN6328 2SC5551 300mA) 2SC5551] LA 7687 a
TRANSISTOR MARKING YB 1L

Abstract: 2SK 2SA 2SC equivalent 1B01F ON 4497 HF transistor transistor 2sc 1586 transistor 2sk power amp i203 transistor transistor bc 2sk transistor 2sk 70 n1703
Text: n t> Type No. NPN 2SC 4116 2SC 4I17 2SC 4118 2SC4213 2SC4666 2SC4667 PNP 2SA 1586 2 SA I587 2SA , m e n t> Type No. NPN 2SC 4738 PNP 2SA 1832 50 150 100 1 20-700 / 7 0 -400 hFE V CEO (V) !mA) Pc , for H igh Frequency E q u ip m e n t> Type No. NPN 2SC 4915 2SC 4839 2SC 4840 2SC4841 PNP - - 30 12 , 100 100100 100 100 100 hpE (MHz) 2SÇ 4215 2SC 4244 2SC 4245 2SC 4246 2SÇ 4247 2SC 4248 2SC 4249 2SC 4250 2SC4251 2SC 4252 2SC 4253 2SC4321 2SC 4325 2SC 4392 2SC 4393 2SC 4394 40 - 200 40MIN. 4 0 -2 0 0 6


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PDF 2SC4841 OT89/SC62) TRANSISTOR MARKING YB 1L 2SK 2SA 2SC equivalent 1B01F ON 4497 HF transistor transistor 2sc 1586 transistor 2sk power amp i203 transistor transistor bc 2sk transistor 2sk 70 n1703
2SC4713

Abstract: ssf transistor
Text: Mount Transistors Transistor , NPN, 2SC Series 2SC4713K, 2SC4774 Absolute maximum ratings (Ta = 25 , 270 - 560 Surface Mount Transistors noH m 205 2SC4713K, 2SC4774 Transistor , NPN, 2SC , Mount Transistors Transistor , NPN, 2SC Series 2SC4713K, 2SC4774 Electrical characteristic curves , Mount Transistors Figure 6 ROHm 207 2SC4713K, 2SC4774 Transistor , NPN, 2SC Series 01 , low capacitance Transistor , NPN Dimensions (Units : mm) 2SC4713K (SMT) Applications · radio


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PDF 2SC4713K 2SC4774 SC-59) SC-70) 2SC4774; 2SC4713K 2SC4713K, 2SC4774 2SC4713 ssf transistor
ad 303 transistor

Abstract: ad1586 Branding KX AD marking 9l sot-23
Text: the Vbe of a forward-biased transistor , a zero TC reference can be developed. In the AD 1586 /7/8/9 , ANALOG DEVICES 2.5 Vto 5.0 VMcropcwer, Redsion Shunt MxJe\ätage inferences Æ) 1586 /7/8'9 , NO CONNECT GENERAL DESCRIPTION TARGET APPLICATIONS The AD 1586 , AD 1587, AD 1588, and AD 1589 are , a wide range of video RAM D AC s. The AD 1586 /7/8/9's superior accuracy and temperature stability 3 , the AD 1586 /7/8/9 make these references ideal for use in battery powered 3 V or 5 V systems, where


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PDF 10kHz) OT-23 AD1586/7/8/9 100MA ad 303 transistor ad1586 Branding KX AD marking 9l sot-23
2SB212

Abstract: 2SD206 2SB205 2SD207 2SC1470 1470 LM power darlington 200V, 30A 2sc431 2SC1466 Germanium Transistor
Text: 200W SUNKEN CAT.No.E327 200W type high voltage silicon power transistor developed newly by , POWER TRANSISTOR Type Pc [w] IC I IB (A] I (A) VCBO [v] VCEO (V) Vces (V) hFE (STD) f ae (kHz) T, [°C] Dimensions Germanium transistor 2SB205 80 -20 -3 - 80 - -60 40 2.5 85 Fig.26 (For low-frequency , -85 100 Silicon transistor 2SC407 100 10 3 150 100 - 20 400 150 Fig.27 2SC408 150 100 40 , 140 40 2SC435 300 200 20 2SC436 300 200 40 High voltage silicon transistor


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PDF 2SC1470 2SC1471 T30M36 T30M40 T10M36) T10M40) T30M36) T30M40) 2SB212 2SD206 2SB205 2SD207 1470 LM power darlington 200V, 30A 2sc431 2SC1466 Germanium Transistor
transistor 301

Abstract: No abstract text available
Text: 2SC2411K, 2SC4097 Transistor , NPN, 2SC series Absolute maximum ratings (Ta = 25°C) Parameter , noNm Surface Mount Transistors < V, lE = 0 A, f = 1 MHz II Transistor , NPN, 2SC series , Transistor , NPN Dimensions (Units : mm) 2SC2411K (SMT3) suitable for low-voltage operations due to low , ) Figure 5 Surface Mount Transistors Figure 6 M H ffl 167 2SC2411K, 2SC4097 Transistor , NPN, 2SC series EMITTER C U R R E N T : IE (mA) Figure 7 Ordering information Package Code Basic


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PDF 2SC2411K 2SC4097 SC-59) SC-70) 2SC2411K, 2SC4097; 2SC2411K 2SA1036K 2SA1577 transistor 301
Not Available

Abstract: No abstract text available
Text: 2SC4132 Transistor , NPN, 2SC series Electrical characteristics (unless otherwise noted, Ta = 25 , ) Figure 1 Figure 2 194 RDNfn Surface Mount Transistors < Transistor , NPN, 2SC series , 2SC4132 Transistor , NPN Features available in MPT3 (MPT, SOT-89, SC-62) package package , CURRENT : lo (A) Figure 7 Surface Mount Transistors Figure 8 ROHffl 195 2SC4132 Transistor , NPN, 2SC series EM ITTER CURRENT : Ie (mA) COLLECTOR TO BASE VOLTAGE : V or (V


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PDF 2SC4132 OT-89, SC-62) 2SC4132; 2SC4132
Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Drive IC 2SC3346 C3182N
Text: TO-126 (IS), PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE TO-126 (IS) PW MOLD Darlington A , ) PACKAGE TRANSISTOR S E L ECTION G UIDE r- " ~ '''- Y C E O ( V ) - " lc (A) 0.1 0.15 0.3 0.5 1.5 2 , 2SA940 .' 2SC 3296 TÌ2SA13G4 /" 2SC 3298 CI2SA I306 l_,2SC3298A 2SA 1306A H 2SC 3298B 2 S A , 2SP2012 ~]2SB1375 C32SD2127 H 2S C 3475 H 2SD 2092 2 S D 2 I2 9 2SB 14U 2SC 3I48 H 2 S C 3559 4 , S D 7 9 6 2SC 2553 H 2 S C 3310 H S 3529A 6 2SD553 2SB5532SD1412 P2SB 3019 ·2 S D 6 3 5 ·


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PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Drive IC 2SC3346 C3182N
Q62702-D401

Abstract: TRANSISTOR bd 330 b0330 4l transistor transistor BD 329 330 transistor spring washer Q62902-B63 Q62702-D395 V 04350
Text:  2SC J> m fl23SbDS QQQH3H1 T HSIEG PNP Silicon Planar Transistor BD 330 _25C 04-349 D SIEMENS AKTIENGESELLSCHAF BO 330 is an epitaxial PNP silicon planar transistor in TO 126 plastic package (12 A 3 DIN 41 869, sheet 4). Together with its complementary transistor BD 329 it is particularly suitable for use in , in K/W K/W V1772 A-03 395 U-IT 2SC D m ä235bOS G0Q4350 b «SIEG 25C 04350 D SIEMENS , iojjs : BOps lOOjjs. 200ps[ 1ms 4L 10* V 2SC D ■û23SbOS Q0043S1 ô HSIEÛ j V&^IO Ut DJ L cr- r


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PDF fl23SbDS Q62702-D395 330/BD Q62702-D401 Q62902-B63 200ps[ 23SbOS Q0043S1 Q62702-D401 TRANSISTOR bd 330 b0330 4l transistor transistor BD 329 330 transistor spring washer Q62902-B63 Q62702-D395 V 04350
2SB205

Abstract: GERMANIUM TRANSISTOR 2SC1468 1470 LM ac-ac inverter 2SC1470 2SB214 2SB206 transformerless inverter 2sd206
Text:  SHINDENBEN CAT.No.E326 100W type high voltage silicon power transistor developed newly by , Junction temperature Ti C°C) 200 Collector current-Switching time (Fig. 11) 4 POWER TRANSISTOR Type , Germanium transistor 2SB205 80 -20 -3 - 80 - -60 40 2.5 85 Fig.26 (For low-frequency power amplification , transistor 2SC407 100 10 3 150 100 - 20 400 150 Fig.27 2SC408 150 100 40 2SC409 200 140 20 , 300 200 20 2SC436 300 200 40 High voltage silicon transistor 2SC1466 30 3 1 450 360(sus


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PDF 2SC1468 2SC1469 T10M36 T10M40 T10M36) T10M40) T30M36) T30M40) 2SB205 GERMANIUM TRANSISTOR 2SC1468 1470 LM ac-ac inverter 2SC1470 2SB214 2SB206 transformerless inverter 2sd206
b 514 transistor

Abstract: 2SC SERIES 2SC SERIES TRANSISTORS SC marking code NPN transistor 2SC4102 2SC3906K marking MSO T106 T146 Transistor marking 0.5
Text: Surface Mount Transistors 185 7fi56cncl 0014771 514 2SC3906K, 2SC4102 Transistor , NPN, 2SC series , Transistors 7asaim 0014772 MSO Transistor , NPN, 2SC series 2SC3906K, 2SC4102 Electrical characteristic , , 2SC4102 Transistor , NPN, 2SC series Figure 7 Figure 8 T««25t f-IMHz lc , 2SC3906K 2SC4102 Transistor , NPN Features available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) package package marking: 2SC3906K and 2SC4102; T*, where ★ is hpE code high breakdown voltage, Vceo =


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PDF 2SC3906K 2SC4102 SC-59) SC-70) 2SC4102; 2SA1514K 2SA1579 2SC3906K b 514 transistor 2SC SERIES 2SC SERIES TRANSISTORS SC marking code NPN transistor 2SC4102 marking MSO T106 T146 Transistor marking 0.5
transistor BD

Abstract: TRANSISTOR bd 330
Text: 2SC D fl23SbDS QQQHBMI T M S I E G BD 330 25C0 4 3 4 9 D T - 3 1 '/ ? PNP Silicon Planar Transistor _ SIEMENS AKTIENGESELLSCHAF BO 330 is an epitaxial PNP silicon planar transistor in TO 126 plastic package (12 A 3 DIN 41 869, sheet 4). Together with its complementary transistor BD 329 it is particularly suitable for use in complementary output stages , RthJA RfhJC ¿100 in K/W K/W V1772 A-03 395 u -r 2SC D Ô235b05 ÜG043S0 b «


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PDF fl23SbDS 330/BD Q62702-D395 Q62702-D401 Q62902-B63 235bQS GQ04351 BD330 transistor BD TRANSISTOR bd 330
15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 T15J103 02SC5030 Driver IC 2SC3346
Text: ) 2SC 2073 2SC 3296 O U T L IN E S . % % % Voice output Transistor P ackage T O -9 , L -S T M (T 0 -9 2 M 0 D )T Y P E POWER TRANSISTOR V 'CEO \(V> 10 30 40 50 60 80 , - I 26 (IS ),N P M , POWER MOLD, TPS TYPE TRANSISTOR 'V 'C EO \(V ) IC (A )\ 0.05 2SC3423 2SA1360 , TYPE POWER TRANSISTOR V cE O \(V ) IC (A )\ 0.05 0.15 0.3 0.5 1.0 2SC2073 2SA940 C29C3296 2SA1304 , TRANSISTOR VCEO \v ) Id A) \ 30 40 60 80 100 200 250 300 400 450 A 2SD1508


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PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 T15J103 02SC5030 Driver IC 2SC3346
AC 187 npn transistor TO 1

Abstract: Transistor AC 188 transistor lt 186 Transistor AC 187 2SC3906K
Text: ) Collector Surface Mount Transistors MMm 185 2SC3906K, 2SC4102 Transistor , NPN, 2SC series , - 820 186 M H Vfl Surface Mount Transistors Transistor , NPN, 2SC series 2SC3906K , Transistor , NPN, 2SC series C O LLE C T O R TO BAS E V O LT A G E : VCB (V ) Figure 7 Figure 8 O , pair with 2SA1514K or 2SA1579 Transistor , NPN Dimensions (Units : mm) 2SC3906K (SMT3) 8 9 *0 2


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PDF 2SC3906K 2SC4102 SC-59) SC-70) 2SC4102; 2SA1514K 2SA1579 2SC3906K AC 187 npn transistor TO 1 Transistor AC 188 transistor lt 186 Transistor AC 187
2n3055 npn transistor toshiba

Abstract: TOSHIBA 2N3055 Transistor 2SA 2SB 2SC 2SD 2N3055 toshiba RF Transistor BF42 BU208 MP transistor transistor 2sc pnp
Text: 2. Id e n tific a tio n System 2.1 A) Transistors EIAJ METHOD (Example) C) TOSHIBA HOUSE No. (Example) 2SC 1st 4289 2nd A 3rd ST100Q22 SI 298 2.2 High-frequency power amplifier modules (Example) 1st group: transistor types are indicated as shown below. 1st group characters 2SA 2SB 2SC , indicating power module 2nd gro u p : Numeral indicating transistor o rF E T 3 rd gro u p : Code indicating transistor or FET and package combination 4 th g ro u p : Product serial number BF422 BU208 57


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PDF ST100Q22 2N3055 BF422 BU208 2n3055 npn transistor toshiba TOSHIBA 2N3055 Transistor 2SA 2SB 2SC 2SD 2N3055 toshiba RF Transistor BF42 BU208 MP transistor transistor 2sc pnp
2SC2433

Abstract: ft3813 2SC2434 tr8050
Text: ) Septem ber 1979 SILICON NPN RING EMITTER TRANSISTOR (RET) T h e 2 S C 2 4 3 3 /2 S C 2 4 3 4 are , E m itte r Transistor (R E T ) te c h nology. R E T devices are constructed w ith m u ltip le em , em p e ra tu re Storage T e m p e ra tu re Range S ym b o l v CBO v EBO V CEO 2SC 2433 120 5 120 30 10 150 + 1 75 - 6 5 ~ +175 2SC 2434 70 5 70 30 10 150 U n it V V V A A i c b PC Ti ~*"stg w , S ym b o l T est C o n d itio n s M in . V c b = 120V, l E = 0 o II 2SC 2433 Typ. - 2SC


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PDF 2SC2433 2SC2434 FT3863) ft3813 2SC2434 tr8050
TH 2190 Transistor

Abstract: BSV62 TRANSISTOR K 2191 BSY62 Q60218-Y62-A Q60218-Y18 Q60218-Y17 CE010 BSY63 BSY17
Text:  2SC » ■ÖS3SbDS 00G4fl24 3 «SIEG j ■f-hS'~öf NPN Transistors for Switching , ). Their collectors are electrically connected to their cases. Transistor BSY 17 corresponds to type , < 2% 2SC D ■0235bGS QGQ4fl2b 7 I 25C 0^826 " D SIEG -35-09 "SIEMENS AKTIENGESELLSCHAF Static , 0.72 (<0.8) V VW» = <0.4-V Test circuit for storage time (fs) 1) The transistor is saturated to , -13 2SC D ■fl23SbOS QQQ4Ö27 ^ «SIEG 25C~Ö4827" "' ^ Q«? -SIEMENS AKTIENGESELLSCHAF - Dynamic


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PDF 00G4fl24 BSY62 Q60218-Y17 Q60218-Y18 Q60218-Y62-A Q60218-Y62-B Q60218-Y63 Coll4830 QT-35- BSY18 TH 2190 Transistor BSV62 TRANSISTOR K 2191 BSY62 Q60218-Y62-A Q60218-Y18 Q60218-Y17 CE010 BSY63 BSY17
Not Available

Abstract: No abstract text available
Text: Amplifier Transistor , RF switching 2SC4997 / 2SC4998 •Feature« •A b s o lu te maximum ratings , V C ollector current 2SC 4997 P ac kag e 15 E m itter-base voHage Type Limits , llector-base voltage Ic 2S C 4997 C ollector pow er dissipation 2SC 4996 2S C 4998 EM T3 UM , , f = 1 M H z (SPEC-C131) High-frequency Amplifier Transistor (25V, 300MHz) I 2SC4618 / 2SC4098 , current •P a c ka g in g specifications and hre Typs 2SC 4618 P a ck ag e EM T3 UM T3


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PDF 2SC4997 2SC4998 2SC4618 2SC4098 2SC2413K 2SC2058S 240MHz) 0Dlb713
UPC1342V

Abstract: UPC1342 transistor C 2987A transistor 2sc 4267 C1342V 2SD2013 PC1342V D1289 2SC2987 C2987
Text: Distortion. 0.002 %TYP. (VCc = ±46 V, f = 1 kHz, A v = 30dB ,P o = 80 W, RL = 8 f i with Power Transistor ) 0.006 % TYP. {VCc - ±46 V, f = 20 kHz, Av = 30 dB, P0 = 80 W, RL = 8 i2 with Power Transistor ) · Wide , Voltage (Operational) Input Bias Resistance Power Transistor hpr Closed Loop Voltage Gain Junction , -0 / +Vcc I RECOMMENDED POWER TRANSÌSTOR Po Q1 25 to 4 0 W 2SD 1288 2S D 2013 4 5 to 58 W 2S D 1289 2SD 1977 5 0 to 7 0 W 2SC 3012 2SC 4267 7 0 to BO W 2 S C 2987 2SC2987A 2SC 4268


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PDF 427S25 GG230t uPC1342V D53D75 UPC1342 transistor C 2987A transistor 2sc 4267 C1342V 2SD2013 PC1342V D1289 2SC2987 C2987
2SC4938

Abstract: transistor z3
Text: HI ■TflSimT GQIMTTS TSa ■209 2SC4938 Transistor , NPN, 2SC series Electrical characteristics , (»t) (V) Transistor , NPN, 2SC series 2SC4938 Ordering information Package Tape Code TL Basic , 2SC4938 Transistor , NPN Features • available in PSD package • high-speed switching, tf < 1.0 (is for lc = 4A • low collector saturation voltage, typically, VCE(sat)< 1.0 Vfor 'C/'b -5 A/1 A • wide safe operating area (SOA) Applications • switching regulator Dimensions (Units: mm


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PDF 2SC4938 2SC4938 transistor z3
Bd 130 NPN transistor

Abstract: 62702-D394 transistor z5
Text: 2SC D - 623SbQS QQQM3Mb M « S I E G BD 329 CK346 0 - 7 r ? i~. ° 7 25C NPN Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package (12 A 3 DIN 41 869, sheet 4). Together with its complementary transistor BD , Approx. weight 0.5 g Transistor fixfng with M 3 screw D im ensions in m m Starting torque max. 0.8 , issblle operating range Total perm, pow er dissipation WO 200 °C 1770 A-01 393 2SC D


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PDF 623SbQS CK346 329/BD 62702-D394 Q62702-D401 Q62902-B63 0QQ434fl -T-33 Bd 130 NPN transistor transistor z5
2SC1470

Abstract: 1470 LM 2SC1471 ei ferrite core 700W T30M36 T30M40 2sc14 M4X14
Text: 200W SUNKEN CAT.No.E327 200W type high voltage silicon power transistor developed newly by , €” \ \ / — \ o 1- 2SC 1471 | | — T 0 = 25' C X , (MAX) CmA) hfe (STD) VcE (SAT) (V) Vbe (SAT) (V) fT (STD) (MHz) 2SC 1466 (T3M 36) 30 150 450 360 4 3 1 5 (Tc= 150°C) 10 (Tc=150°C) 10 (Tc=150°C) 16 0.4 (STD) 1.2 (STD) 10 2SC 1467 (T3M 40) 500 400 12 2SC 1468 (T10M36) 100 150 450 360 4 10 4 10 (tc = 150°C) 20 (tc = 150°C) 20 (Tc = 150°C) 16


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PDF 2SC1470 2SC1471 T30M36 T30M40 T10M36) T10M40) T30M36) T30M40) 1470 LM 2SC1471 ei ferrite core 700W T30M40 2sc14 M4X14
e 3055 t

Abstract: 2N3055 transistor 3055 M 3055 power transistor 3055 transistor power transistor 3055 3055 npn j 3055 on 3055 power transistor IN 3055
Text: 2SC T > m flS3SbOS D004T11 * ) mZIZG . T ~ 2 3 -/ 3 2 N 3055 NPN Transistor for , diffused NPN silicon transistor in TO 3 case (3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for use in powerful AF output stages and in , mounting of this transistor on a chassis; they are to be ordered separately. Typo 2 N 3055 Ordering , - 6 5 to +200 115 V V V V V A A °C °C W RthJC | £ 1.5 | K/W 2273 A -U 957 2SC


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PDF D004T11 Q62702-U58 B--01 fl23Sb05 A23SbDS B--03 e 3055 t 2N3055 transistor 3055 M 3055 power transistor 3055 transistor power transistor 3055 3055 npn j 3055 on 3055 power transistor IN 3055
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