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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor 2n3772 Datasheets Context Search

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2002 - transistor 2n3772

Abstract:
Text: Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 NPN SILICON PLANAR POWER TRANSISTOR 2N3772 TO-3 Metal Can Package Designed , of 4 NPN SILICON PLANAR POWER TRANSISTOR 2N3772 TO-3 Metal Can Package ELECTRICAL , Rate 60 cps. Continental Device India Limited Data Sheet Page 2 of 4 2N3772 TO-3 Metal Can , of 4 Notes 2N3772 TO-3 Metal Can Package Disclaimer The product information and the


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PDF 2N3772 C-120 2N3772Rev080202E transistor 2n3772
vcb 60 veb 4 ic 10a metal can

Abstract:
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3772 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Designed for Linear , NPN SILICON PLANAR POWER TRANSISTOR 2N3772 TO-3 Metal Can Package ELECTRICAL CHARACTERISTICS (TC , , Repetitive Rate 60 cps. µ Continental Device India Limited Data Sheet Page 2 of 4 2N3772 TO , Data Sheet Page 3 of 4 2N3772 Notes TO-3 Metal Can Package Disclaimer The product


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PDF 2N3772 C-120 2N3772Rev080202E vcb 60 veb 4 ic 10a metal can 2N3772 transistor 2n3772
2N3772

Abstract:
Text: PLANAR POWER TRANSISTOR 2N3772 TO-3 Metal Can Package ELECTRICAL CHARACTERISTICS (TC=25ºC unless , Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company 2N3772 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Designed for Linear Amplifiers, Series Pass , Rate 60 cps. µ Continental Device India Limited Data Sheet Page 2 of 4 2N3772 TO , Data Sheet Page 3 of 4 2N3772 Notes TO-3 Metal Can Package Disclaimer The product


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PDF ISO/TS16949 2N3772 C-120 2N3772Rev080202E 2N3772 2N3772 APPLICATIONS transistor 2n3772 vcb 60 veb 4 ic 10a metal can
Not Available

Abstract:
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3772 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Designed for Linear , NPN SILICON PLANAR POWER TRANSISTOR 2N3772 TO-3 Metal Can Package ELECTRICAL CHARACTERISTICS (TC , , Repetitive Rate 60 cps. Continental Device India Limited Data Sheet Page 2 of 4 2N3772 TO , Data Sheet Page 3 of 4 2N3772 Notes TO-3 Metal Can Package Disclaimer The product


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PDF 2N3772 C-120 2N3772Rev080202E
2N3771

Abstract:
Text: 3.75 2.5 Adc _ - 2 Motorola Bipolar Power Transistor Device Data 2N3771 2N3772 0.02 , Bipolar Power Transistor Device Data 3 2N3771 2N3772 100 50 VCC = 30 V _ IC /lB = 10 lB1 - lB2 T , -204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 5 2N3771 2N3772 M otorola , Vdc - 2N3771 = 2.5 Adc @ V q e = 60 Vdc - 2N3772 2N 3771* 2N 3772 'Motorola Preferred Device , CEO VCEX VCB V EB 2N3771 40 50 50 5.0 30 30 7.5 15 150 0.855 2N3772 60 80 100 7.0 20 30 5.0 15


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PDF 2N3771/D 2N3771 2N3772 2N3771 2n3772 2N3771 power circuit LB2T motorola 2n3771
1995 - 2N3772 motorola

Abstract:
Text: Bipolar Power Transistor Device Data 5 2N3771 2N3772 Motorola reserves the right to make changes , © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 REV 7 Preferred , . Symbol 2N3771 2N3772 Unit Collector­Emitter Voltage VCEO 40 60 Vdc , _C Symbol 2N3771, 2N3772 Unit JC 1.17 _C/W Thermal Resistance, Junction to Case , 3.75 Adc @ VCE = 40 Vdc - 2N3771 IS/b = 2.5 Adc @ VCE = 60 Vdc - 2N3772 20 and 30 AMPERE POWER


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PDF 2N3771/D* 2N3771/D 2N3772 motorola 1N5825 2N3771 2N3772 2N6257 motorola 2n3771 MSD6100
2008 - 2N3772

Abstract:
Text: .1 1165892 Maximum Ratings (Note 1) Rating Symbol 2N3772 Collector-Emitter Voltage VCEO , Collector-Emitter Sustaining Voltage (Note 2 and 3) (lC = 0.2 A dc, lB = 0) 2N3772 VEO (sus) 60 - Collector-Emitter Sustaining Voltage (IC = 0.2A dc, VEB (off) = 1.5 V dc, RBE = 100) 2N3772 VCEX (sus) 80 - Collector-Emitter Sustaining Voltage (IC = 0.2A dc, RBE = 100) 2N3772 VCER (sus) 70 - Collector Cut off Current (Note 2) (VCE = 50V dc, IB = 0 ) (VCE = 25V dc, IB = 0 ) 2N3772


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2004 - high power transistor

Abstract:
Text: 2N3772 High Power Transistor High power NPN silicon power transistor . General-Purpose linear , A 31/05/05 V1.0 2N3772 High Power Transistor Thermal Characteristics Characteristic , .0 2N3772 High Power Transistor Specifications IC(av) maximum (A) VCEO maximum (v) hFE minimum , -3 NPN 2N3772 Page 4 31/05/05 V1.0 2N3772 High Power Transistor Notes: International , Maximum NPN 2N3772 A 38.75 39.96 20 Ampere B 19.28 22.23 NPN Silicon Power


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PDF 2N3772 high power transistor transistor 7333 Transistor 358 to3 2N3772 2N3772 APPLICATIONS 2N3772A 358 transistor transistor 358 to-3 transistor 928
2006 - 2N3771

Abstract:
Text: 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These , @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 Pb-Free Packages are Available* 20 , 2N3772 Unit Collector-Emitter Voltage Rating VCEO 40 60 Vdc Collector-Emitter , Country of Origin ORDERING INFORMATION Device 2N3771 2N3771G 2N3772 2N3772G Package Shipping , ) 2N3772 IS/b Adc SECOND BREAKDOWN *DYNAMIC CHARACTERISTICS (Note 2) Collector-Emitter


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PDF 2N3771, 2N3772 2N3771 2N3771 2N3771/D 2N3772 2N3772G 1N5825 2N3771 power transistor 2N3771G 2N6257 MSD6100
2006 - 2N3771

Abstract:
Text: ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed , = 2.5 Adc @ VCE = 60 Vdc - 2N3772 These devices are available in Pb-free package(s). , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *MAXIMUM RATINGS Rating Symbol 2N3771 2N3772 Unit , , 2N3772 Unit Thermal Resistance, Junction to Case JC 1.17 _C/W Operating and Storage , Publication Order Number: 2N3771/D 2N3771 2N3772 PD, POWER DISSIPATION (WATTS) 200 175 150 125


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PDF 2N3771* 2N3772 2N3771 2N3771/D 2N3771 2N3771 power circuit 2N3772 1N5825 2N3771 power transistor 2N6257 MSD6100 Power Transistor 2N3771 transistor 2N3771
2001 - 1N5825

Abstract:
Text: ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed , = 2.5 Adc @ VCE = 60 Vdc - 2N3772 ÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Symbol 2N3771 2N3772 Unit Collector­Emitter Voltage VCEO 40 60 Vdc , Symbol 2N3771, 2N3772 Unit JC 1.17 _C/W Operating and Storage Junction Temperature , 2N3772 (VCE = 60 Vdc) IS/b Adc SECOND BREAKDOWN *DYNAMIC CHARACTERISTICS Base­Emitter On


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PDF 2N3771* 2N3772 2N3771 r14525 2N3771/D 1N5825 2N3771 2N3772 2N6257 MSD6100
2006 - Not Available

Abstract:
Text: 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These , Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 Pb−Free Packages are Available , Ž MAXIMUM RATINGS (Note 1) Symbol 2N3771 2N3772 Unit Collector−Emitter Voltage Rating , INFORMATION Device 2N3771 2N3771G 2N3772 2N3772G Package Shipping TO−204 100 Units / Tray , 40 Vdc) 2N3771 (VCE = 60 Vdc) 2N3772 IS/b Adc SECOND BREAKDOWN *DYNAMIC


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PDF 2N3771, 2N3772 2N3771 2N3771 2N3771/D
1997 - 2N3772

Abstract:
Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal , CEO Collector-Emitter Voltage (I E = 0) 2N3772 40 60 V V CEV Collector-Emitter , o C 1/4 2N3771/ 2N3772 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case , Current (V BE = -1.5V) for 2N3771 for 2N3772 for all V CB = 50 V V CB = 100 V VCB = 30 V T j =


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PDF 2N3771 2N3772 2N3771, 2N3772 2N3771
1995 - 2N3771

Abstract:
Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal , 2N3772 60 V V CEO Collector-Base Voltage (I E = 0) 40 V CEV Collector-Emitter Voltage , 2N3771/ 2N3772 THERMAL DATA R thj -ca se Thermal Resistance Junction-case Max o 1.17 C/W , 2N3771 V CB = 50 V for 2N3772 V CB = 100 V o for ALL V CB = 30 V T j = 150 C 2 5 10 mA mA


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PDF 2N3771 2N3772 2N3771, 2N3772 2N3771 P003N
2012 - Not Available

Abstract:
Text: UNISO TE NIC CHNO G SCO LTD LO IE ., 2N3772 SILICON NPN TRANSISTOR SI LI CON N PN T RAN SI ST ORS ̈ DESCRI PT I ON The UTC 2N3772 is a silicon power transistor in TO-3 metal case , 40 MHz 2 of 3 QW-R205-002,Ba 2N3772 SILICON NPN TRANSISTOR UTC assumes no , -3 Pin Assignment 1 2 3 B E C Packing Tray 1 of 3 QW-R205-002,Ba 2N3772 ̈ SILICON NPN TRANSISTOR ABSOLU T E M AX I M U M RAT I N G (TA=25 , unless otherwise specified ) PARAMETER


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PDF 2N3772 2N3772 2N3772L-T30-Y 2N3772G-T30-Y QW-R205-002
2012 - 2N3772

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD 2N3772 SILICON NPN TRANSISTORS DESCRIPTION SILICON NPN TRANSISTOR The UTC 2N3772 is a silicon power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications. 1 TO-3 ORDERING INFORMATION , -002,Ba 2N3772 SILICON NPN TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25, unless otherwise , TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R205-002,Ba 2N3772 SILICON NPN TRANSISTOR


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PDF 2N3772 2N3772 2N3772L-T30-Y 2N3772G-T30-Y QW-R205-002 2N3772G
1997 - 2N3772

Abstract:
Text: 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal , 2N3772 60 V V V CEO Collector-Emitter Voltage (I E = 0) 40 V CEV Collector-Emitter , / 2N3772 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.17 C/W , = 50 V for 2N3772 V CB = 100 V for all V CB = 30 V T j = 150 o C 2 5 10 mA mA mA I


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PDF 2N3771 2N3772 2N3771, 2N3772 2N3771 20A40 2N3771 canada 2N3772 APPLICATIONS
2000 - 2N3771

Abstract:
Text: 2N3771 2N3772 ® HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec , Unit 2N3771 2N3772 60 V V CEO Collector-Emitter Voltage (I E = 0) 40 V CEV , T stg December 2000 150 -65 to 200 W o C 1/4 2N3771/ 2N3772 THERMAL DATA R , . Unit I CEV Collector Cut-off Current (V BE = -1.5V) for 2N3771 V CB = 50 V for 2N3772 V CB =


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PDF 2N3771 2N3772 2N3771, 2N3772 2N3771 2N3771 power circuit 2N3772 APPLICATIONS
2000 - Not Available

Abstract:
Text: 2N3771 2N3772 ® HIGH POWER NPN SILICON TRANSISTOR I STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec , Unit 2N3771 V CEO 2N3772 Collector-Emitter Voltage (I E = 0) 40 60 V V CEV , Temperature December 2000 150 -65 to 200 W o C 1/4 2N3771/ 2N3772 THERMAL DATA R thj-case , CEV Collector Cut-off Current (V BE = -1.5V) for 2N3771 V CB = 50 V for 2N3772 V CB = 100 V


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PDF 2N3771 2N3772 2N3771, 2N3772
2000 - 2N3772

Abstract:
Text: 2N3771 2N3772 ® HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec , Uni t 2N3771 V CEO Collector-Emitter Voltage (IE = 0) 2N3772 40 60 V V CEV , December 2000 150 -65 to 200 A W o C 1/4 2N3771/ 2N3772 THERMAL DATA R t hj-ca se , I CEV Collector Cut-off Current (V BE = -1.5V) for 2N3771 for 2N3772 for all VCB = 50 V


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PDF 2N3771 2N3772 2N3771, 2N3772 2N3771
diode cc 3053

Abstract:
Text: , Transistor , NPN, Silicon, High-Power Types 2N3771, and 2N3772 , JANTX and JANTXV 4. NATURE OF CHANGE , -19500/413B 24 March 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR , NPN, SILICON, HIGH-POWER TYPES 2N3771 AND 2N3772 , JAN, JANTX, AND JANTXV This specification is approved for use by all , 20 -65 to +200 -65 to +200 2N3771 2N3772 1/ Derate linearly 34.2 mW/C for TA > +25C. 2 , VCE(SAT) IC = 15 A dc Min 2N3771 2N3772 IC = 10 A dc Max Min Max 5 60 15 1


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PDF MIL-PRF-19500/413C MIL-S-19500/413B 2N3771 2N3772, MIL-PRF-19500. diode cc 3053 cc 3053 2n3771 equivalent 2n3772 EQUIVALENT 2N3771 equivalent transistor cc 3053 diode 2N3772 JANTX Transformer Inspection Testing 2N3772
diode cc 3053

Abstract:
Text: MIL-PRF-19500/413E 27 June 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR , NPN, SILICON, HIGH-POWER, TYPES 2N3771 AND 2N3772 , JAN, JANTX, AND JANTXV This specification is approved for , +200 -65 to +200 6 150 2N3771 1.17 29.2 6 150 2N3772 1.17 29.2 (1) Derate linearly 34.2 , characteristics. Type hFE2 at VCE = 4 V dc IC = 15 A dc Max Min 2N3771 15 60 2N3772 (1) Pulsed (see , = 1 A dc f = 100 kHz IE = 0 100 kHz f 1 MHz 2N3771 2N3772 Limits s Min Max 6


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PDF MIL-PRF-19500/413F MIL-PRF-19500/413E 2N3771 2N3772, MIL-PRF-19500. diode cc 3053 2n3772 EQUIVALENT 1N1186A 2n3771 equivalent 2N3772 2N3772 JAN
2004 - 2N3772

Abstract:
Text: UTC 2N3772 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3772 is a power-base power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified , mA mA 60 UNISONIC TECHNOLOGIES CO. LTD 1 QW-R205-002,A UTC 2N3772 SILICON NPN TRANSISTOR PARAMETER SYMBOL TEST CONDITIONS Collector-Emitter Saturation Voltage VCE(sat


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PDF 2N3772 2N3772 QW-R205-002
2N3772 motorola

Abstract:
Text: Adc (2 \~CE = 60 Vdc ­ 2N3772 = 3.75 ) @I Ic= switching lS/b = 3.75 = - MJ6257 (:M , ing Voltage Adc, RBE = 1000hms) `CEX(SUS) VCER(S"~) 2N3771 2N3772 = 1.5 Vdc, Vdc , lB=O) MJ3771 2N3772 (f C=0.2AdC, 2N3772 2N6257 COl Iector Cutoff Current ,Ltu (VCE = 30 Vdc, iB = O) 2N3771 MJ3771 (VCE 2N3772 MJ3772 2N6257 MJ6257 2N3771 MJ3771 2N3772 MJ3772 = 50 Vdc, IB = 0} (VCE 25 = Vdc, I B = 0) COl Iector Cutoff =


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PDF lJ3771 10Adc M305300 MSO61OO 2N3771, 2N3772, 2N6257 MJ3771 48w-2 MJ6257 2N3772 motorola 200iC 2N6257 MJ3771 MOTOROLA MJ3771 2N3772 2N3771 MJ3772 W630 lj377
RCA 431 transistor

Abstract:
Text: 2N5497A 2N3055 2N3772 - 60 to 150V 2N1486 2N2102 2N4036 2N1486 2N3441 2N5298 2N5781 2N5784 2N3442 2N3879 , & P-N-Pl as Pass Transistors for Series Reaulator Service and Video Outout Pass Transistor , J 2N3772 2N5575 60 to 150 40349 2N3441 2N3442 2N4347 2N5293 2N3772 2N4348 2N5578 150 to 400 , 180 2N1489 208 TX2N3440 368 2N3772 413 TX2N6212 461 2N1484 180 2N1490 208 2N3441 369 TX2N3772 413


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PDF 2N3053 2N4037 2N5321 2N5323 2N6179 2N6181 2N3054 2N5497A 2N3055 2N3772 RCA 431 transistor 2N3442 RCA RCA 2N3055 transistor 2N3055 RCA 2n3773 rca rca 2n3055 RCA 40852 transistor BF 257 transistor RCA 41013 2N5416 RCA
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