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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor 2SC114 replacement Datasheets Context Search

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usaf516es047m

Abstract: usaf517es060m 2SC114 usaf516es048m NS477 2SC814 TC236 T018 ST62 2SA647
Text: one manufacturer with the devices of others. RT . Replacement Type; consult manufacturer. SYMBOLS & , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , 35p 35p 35d P-DPL P-DPl P-DPL Si Si 175J 175J 175J ZA 15 ZA 15 ZA15 37# 38 39 2SC114 CS718 TE697 80


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PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 usaf516es047m usaf517es060m 2SC114 usaf516es048m NS477 2SC814 TC236 T018 ST62 2SA647
transistor 2SC114 replacement

Abstract: 2SC114 transistor 2SC114 usaf516es047m transistor 2SC114 usaf517es060m 2sc107 BC175 transistor usaf516es048m SA1000
Text: one manufacturer with the devices of others. RT . Replacement Type; consult manufacturer. SYMBOLS & , ° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor , 15 ZA 15 ZA15 37# 38 39 2SC114 CS718 TE697 80.OM 80.0MA 80MA 70n 200nt 200nt 110n 25n 750m 1.0 0


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PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 transistor 2SC114 replacement 2SC114 transistor 2SC114 usaf516es047m transistor 2SC114 usaf517es060m 2sc107 BC175 transistor usaf516es048m SA1000
transistor 2SC114 replacement

Abstract: FZJ 101 usaf516es047m usaf517es060m 2SA402 usaf516es048m MT995 T05 Package PNP power transistor 2n MT869 MT726
Text: one manufacturer with the devices of others. RT . Replacement Type; consult manufacturer. SYMBOLS & , NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above , 35p 35p 35d P-DPL P-DPl P-DPL Si Si 175J 175J 175J ZA 15 ZA 15 ZA15 37# 38 39 2SC114 CS718 TE697 80


OCR Scan
PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 transistor 2SC114 replacement FZJ 101 usaf516es047m usaf517es060m 2SA402 usaf516es048m MT995 T05 Package PNP power transistor 2n MT869 MT726
transistor t09

Abstract: A1383 transistor 2sc114 transistor 2SC114 replacement usaf516es048m 2sc107 2SA27 usaf517es060m usaf516es047m 2SA474
Text: one manufacturer with the devices of others. RT . Replacement Type; consult manufacturer. SYMBOLS & , NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above , 35p 35p 35d P-DPL P-DPl P-DPL Si Si 175J 175J 175J ZA 15 ZA 15 ZA15 37# 38 39 2SC114 CS718 TE697 80


OCR Scan
PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 transistor t09 A1383 transistor 2sc114 transistor 2SC114 replacement usaf516es048m 2sc107 2SA27 usaf517es060m usaf516es047m 2SA474
usaf516es047m

Abstract: usaf517es060m R110 BC406 2sc107 usaf516es048m 2SC114 D29A8 D29A7 C0912
Text: one manufacturer with the devices of others. RT . Replacement Type; consult manufacturer. SYMBOLS & , NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above , 35p 35p 35d P-DPL P-DPl P-DPL Si Si 175J 175J 175J ZA 15 ZA 15 ZA15 37# 38 39 2SC114 CS718 TE697 80


OCR Scan
PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 usaf516es047m usaf517es060m R110 BC406 2sc107 usaf516es048m 2SC114 D29A8 D29A7 C0912
usaf516es047m

Abstract: transistor 2SC114 transistor T01A usaf517es060m R117A 2SC114 transistor usaf516es048m transistor A431 fzj 165 GME3001
Text: one manufacturer with the devices of others. RT . Replacement Type; consult manufacturer. SYMBOLS & , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , 35p 35p 35d P-DPL P-DPl P-DPL Si Si 175J 175J 175J ZA 15 ZA 15 ZA15 37# 38 39 2SC114 CS718 TE697 80


OCR Scan
PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 usaf516es047m transistor 2SC114 transistor T01A usaf517es060m R117A 2SC114 transistor usaf516es048m transistor A431 fzj 165 GME3001
M-8124

Abstract: usaf516es047m 989T1 987T1 usaf517es060m 2SA430 2SA316 2SA315 2SA314 BA109
Text: one manufacturer with the devices of others. RT . Replacement Type; consult manufacturer. SYMBOLS & , ° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor , 15 ZA 15 ZA15 37# 38 39 2SC114 CS718 TE697 80.OM 80.0MA 80MA 70n 200nt 200nt 110n 25n 750m 1.0 0


OCR Scan
PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 M-8124 usaf516es047m 989T1 987T1 usaf517es060m 2SA430 2SA316 2SA315 2SA314 BA109
2SC114 transistor

Abstract: transistor 2SC114 2SC114 TRANSISTOR 2sc107 transistor 2SC114 replacement transistor 2SA92 2sc308 TQ59A 2N5425 BC194
Text: one manufacturer with the devices of others. RT . Replacement Type; consult manufacturer. SYMBOLS & , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , 35p 35p 35d P-DPL P-DPl P-DPL Si Si 175J 175J 175J ZA 15 ZA 15 ZA15 37# 38 39 2SC114 CS718 TE697 80


OCR Scan
PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 transistor transistor 2SC114 2SC114 TRANSISTOR 2sc107 transistor 2SC114 replacement transistor 2SA92 2sc308 TQ59A 2N5425 BC194
FZJ 101

Abstract: BC337-01 usaf516es047m FT053 T1905 T018 PT1837 PT1836 BC338-01 BSW68A 1990
Text: one manufacturer with the devices of others. RT . Replacement Type; consult manufacturer. SYMBOLS & , NPN or "N" Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above , 35p 35p 35d P-DPL P-DPl P-DPL Si Si 175J 175J 175J ZA 15 ZA 15 ZA15 37# 38 39 2SC114 CS718 TE697 80


OCR Scan
PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 FZJ 101 BC337-01 usaf516es047m FT053 T1905 T018 PT1837 PT1836 BC338-01 BSW68A 1990
st25a

Abstract: 2N905 2N904 ST25A transistor ST25C transistor TRANSISTOR st25a ST25C package 2N906 FZJ 131 TRANSISTOR 2n906
Text: one manufacturer with the devices of others. RT . Replacement Type; consult manufacturer. SYMBOLS & , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , 35p 35p 35d P-DPL P-DPl P-DPL Si Si 175J 175J 175J ZA 15 ZA 15 ZA15 37# 38 39 2SC114 CS718 TE697 80


OCR Scan
PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 st25a 2N905 2N904 ST25A transistor ST25C transistor TRANSISTOR st25a ST25C package 2N906 FZJ 131 TRANSISTOR 2n906
2SC114 transistor

Abstract: 2SC114 2N5425 SA2713 2sc107 ME2001 FZJ 165 transistor 2SC114 R67a R117A
Text: one manufacturer with the devices of others. RT . Replacement Type; consult manufacturer. SYMBOLS & , ° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor , 15 ZA 15 ZA15 37# 38 39 2SC114 CS718 TE697 80.OM 80.0MA 80MA 70n 200nt 200nt 110n 25n 750m 1.0 0


OCR Scan
PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 transistor 2SC114 2N5425 SA2713 2sc107 ME2001 FZJ 165 transistor 2SC114 R67a R117A
2N2886

Abstract: 2SC109 FZJ 131 usaf516es047m 2SC111 2SC15-1 QD150-78 2SC38 250M BF140
Text: one manufacturer with the devices of others. RT . Replacement Type; consult manufacturer. SYMBOLS & , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , 35p 35p 35d P-DPL P-DPl P-DPL Si Si 175J 175J 175J ZA 15 ZA 15 ZA15 37# 38 39 2SC114 CS718 TE697 80


OCR Scan
PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2N2886 2SC109 FZJ 131 usaf516es047m 2SC111 2SC15-1 QD150-78 2SC38 250M BF140
2SC114 transistor

Abstract: FZJ 131 usaf516es047m transistor 2SC114 transistor 2SC114 replacement 400M 2SC430 2SC287 2SC286 2SC288
Text: one manufacturer with the devices of others. RT . Replacement Type; consult manufacturer. SYMBOLS & , ° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor , 15 ZA 15 ZA15 37# 38 39 2SC114 CS718 TE697 80.OM 80.0MA 80MA 70n 200nt 200nt 110n 25n 750m 1.0 0


OCR Scan
PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 transistor FZJ 131 usaf516es047m transistor 2SC114 transistor 2SC114 replacement 400M 2SC430 2SC287 2SC286 2SC288
SFT307

Abstract: usaf516es047m 2N2626 usaf516es048m usaf517es060m SFT308 2N2624 FZJ 101 2N2625 usaf517es060
Text: one manufacturer with the devices of others. RT . Replacement Type; consult manufacturer. SYMBOLS & , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , 35p 35p 35d P-DPL P-DPl P-DPL Si Si 175J 175J 175J ZA 15 ZA 15 ZA15 37# 38 39 2SC114 CS718 TE697 80


OCR Scan
PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 SFT307 usaf516es047m 2N2626 usaf516es048m usaf517es060m SFT308 2N2624 FZJ 101 2N2625 usaf517es060
2000 - Philips TdA3619

Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T
Text: high-voltage transistor MB/ABT16 MB/ABT16 LVC LVC LVC LVC LVC LVC LVC LVC LVC LVC LVC LVC LVC , Replacement part Ship 30-6-01 30-6-01 30-6-01 30-6-01 30-6-01 30-6-01 30-6-01 30-6-01 30-6-01 , . See replacement . Consult Marketing. See replacement . Consult Marketing. See replacement . Consult Marketing. Name change only. See replacement . Consult Marketing. Name change only. See replacement . Consult Marketing. Name change only. See replacement . Consult Marketing. Name change only. See


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2003 - PCF7952

Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
Text: Replacement . Inactive part 7 2PA1576R PNP general purpose transistor 934031790185 N M 3 , Replacement . Inactive part 10 2PB709AS PNP general purpose transistor 934028580185 N M 3 , Replacement . Inactive part 13 2PD601AR NPN general purpose transistor 934026630185 N M 3 , Replacement . Inactive part 16 2PD602AS NPN general purpose transistor 934028540185 N M 3 , -dec-04 BC557B Standard Discontinuation. See Replacement . 206 BC807 PNP general purpose transistor


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PDF VP22480-3 VP22480-5 VP22530-2 PCF7952 pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
2004 - OF4455

Abstract: OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P
Text: Date Replacement Part Customer Comments 1 2PA733P PNP general purpose transistor , Inactive part. See Replacement . 3 2PC945P NPN general purpose transistor 934000120116 T M , . See Replacement . 5 2PC945P NPN general purpose transistor 934000120412 T M 3 31 , different package. See Replacement . 80 BCF32 NPN general purpose transistor 933495380215 T M , Inactive part. See Replacement . 82 BF421L PNP high-voltage transistor 934037430126 T M 3


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PDF Code357A3 30-Jun-04 VY27357A3 OF4455 OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P
OMRON double reflection

Abstract: omron 2410
Text: Recommended Replacement Please contact the appropriate division EE-SB5V Series EE-SY672 (except the EE-SB5M-E) Discontinuation date : The end of May, 2010 Caution on recommended replacement Our , Amplified photomicrosensors, type EE-SY672 for replacement of them (except the EE-SB5V-E). And we recommend , replacement Recommended replacement Product discontinuation Model EE-SB5V EE-SB5V-F EE-SB5V-P1 EE-SB5VC , EE-SY672 EE-SY672 EE-SY672 No recommended replacement Dimensions Model to be discontinued EE-SB5V


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PDF A1PH-095252 EE-SY672 EE-SY672 24VDC 200m/s2) 15000m/S2 OMRON double reflection omron 2410
2001 - PCF7931AS

Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
Text: switching transistor 933146250113 933260820412 T N M M 3 3 30-06-01 30-06-01 31-12-01 31-12-01 PNP general purpose transistor ALVC ALVC ALVC ALVC SATELLITE TUNER (CAEN) SWITCHING , DIODE VARICAP DIODE PNP general purpose transistor PNP medium power transistor 934000420126 , 31-12-01 31-12-01 31-12-01 31-12-01 31-12-01 31-12-01 50 BC546 NPN general purpose transistor 933205520112 N M 3 30-06-01 31-12-01 51 BC546 NPN general purpose transistor


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PDF 87C528 X3A-KTY181/1 X3A-OH155 PCF7931AS PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
2SC114

Abstract: transistor 2SC114 t056 2SC114 transistor transistor t08 TRANSISTOR 2sc107 transistor bdy88 TQ59A 2SC109 BLY89
Text: ° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor , 15 ZA 15 ZA15 37# 38 39 2SC114 CS718 TE697 80.OM 80.0MA 80MA 70n 200nt 200nt 110n 25n 750m 1.0 0


OCR Scan
PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 transistor 2SC114 t056 2SC114 transistor transistor t08 TRANSISTOR 2sc107 transistor bdy88 TQ59A 2SC109 BLY89
2001 - bd139 equivalent transistor

Abstract: transistor 2SA1046 motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 TRANSISTOR REPLACEMENT GUIDE transistor bd610 pin configuration transistor bd140 transistor equivalent book 2sc2238 ST T8 3580
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Transistor Switchmode Bridge Series , (sus) - 400 V Collector­Emitter Breakdown - V(BR)CES - 650 V State­of­Art Bipolar Power Transistor , " design. REV 1 3­696 Motorola Bipolar Power Transistor Device Data , 300 µs, Duty Cycle 2.0%. Motorola Bipolar Power Transistor Device Data 3­697 MJE16106 , VOLTAGE (VOLTS) Figure 5. Capacitance 3­698 Motorola Bipolar Power Transistor Device Data


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PDF MJE16106 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 bd139 equivalent transistor transistor 2SA1046 motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 TRANSISTOR REPLACEMENT GUIDE transistor bd610 pin configuration transistor bd140 transistor equivalent book 2sc2238 ST T8 3580
2001 - TRANSISTOR REPLACEMENT GUIDE

Abstract: bd139 equivalent 2SC495 mje13007 equivalent bd139 equivalent transistor 2N3055 equivalent transistor NUMBER 2sd880 equivalent BDX37 equivalent pin configuration NPN transistor tip41c MJE350 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Transistor 1 kV SWITCHMODE Series , value. REV 3 3­830 Motorola Bipolar Power Transistor Device Data , %. Motorola Bipolar Power Transistor Device Data 3­831 MJH16006A TYPICAL STATIC CHARACTERISTICS VCE , . Capacitance 3­832 Motorola Bipolar Power Transistor Device Data MJH16006A TYPICAL INDUCTIVE , Transistor Device Data 3­833 MJH16006A Table 1. Inductive Load Switching Drive Circuit +15 1 µF 150


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PDF Satur32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 TRANSISTOR REPLACEMENT GUIDE bd139 equivalent 2SC495 mje13007 equivalent bd139 equivalent transistor 2N3055 equivalent transistor NUMBER 2sd880 equivalent BDX37 equivalent pin configuration NPN transistor tip41c MJE350 equivalent
2001 - MJ802 EQUIVALENT

Abstract: 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent
Text: (sus) - 400 V Collector­Emitter Breakdown - V(BR)CES - 650 V State­of­Art Bipolar Power Transistor , for future use and best overall value. REV 1 Motorola Bipolar Power Transistor Device Data , ) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%. 3­530 Motorola Bipolar Power Transistor Device , Figure 5. Capacitance Motorola Bipolar Power Transistor Device Data 3­531 MJ16110 MJW16110 , Bipolar Power Transistor Device Data MJ16110 MJW16110 Table 1. Inductive Load Switching Drive Circuit


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PDF MJ16110* MJW16110* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ802 EQUIVALENT 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent
2001 - TRANSISTOR REPLACEMENT table for transistor

Abstract: replacement for TIP147 POWER TRANSISTOR TO-220 CASE SE9402 transistor 2SA1046 TIP41 TRANSISTOR REPLACEMENT BD863 transistor ON Semiconductor 2N5978 motorola transistor cross reference transistor cross reference TRANSISTOR 2SC2366 TO220
Text: MJF13007 POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS NPN Bipolar Power Transistor For Switching , characteristics - are given to facilitate "worst case" design. Motorola Bipolar Power Transistor Device Data , Unit 3­668 Motorola Bipolar Power Transistor Device Data MJE13007 MJF13007 1.4 VBE(sat , Motorola Bipolar Power Transistor Device Data 3­669 MJE13007 MJF13007 100 50 IC, COLLECTOR CURRENT , power handling ability of a transistor : average junction temperature and second breakdown. Safe


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PDF MJE13007 MJF13007 MJE/MJF13007 MJF13007 Recogniz32 TIP73B TIP74 TIP74A TIP74B TIP75 TRANSISTOR REPLACEMENT table for transistor replacement for TIP147 POWER TRANSISTOR TO-220 CASE SE9402 transistor 2SA1046 TIP41 TRANSISTOR REPLACEMENT BD863 transistor ON Semiconductor 2N5978 motorola transistor cross reference transistor cross reference TRANSISTOR 2SC2366 TO220
usaf516es047m

Abstract: 2sa648 transistor STC5204 usaf517es060m ST9001 2SA614 usaf516es048m B0536 STC5610 SE9562
Text: Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , 35p 35p 35d P-DPL P-DPl P-DPL Si Si 175J 175J 175J ZA 15 ZA 15 ZA15 37# 38 39 2SC114 CS718 TE697 80


OCR Scan
PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 usaf516es047m 2sa648 transistor STC5204 usaf517es060m ST9001 2SA614 usaf516es048m B0536 STC5610 SE9562
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