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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor 2SB 367 Datasheets Context Search

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ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 TIP 43c transistor AC153Y transistor ESM 2878 2sk116 bf199 ac128
Text: . transistor 1" contains more than 19000 different transistors and FET’s, all of which are listed , structure n-ch N channel type (FET) n-p More than one transistor with different polarities in one case pnp , amplifier CATV CB CB-radio Colour television appliction CTV Chopper chop Dari Darlington transistor Dual Gate (FET) dg double Paired types Driver stages dr Dual transistor (differential amplifier) dual end Final stages FET Field-effect transistor FET-depl. Field-effect transistor , depletion type Field-effect


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PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 TIP 43c transistor AC153Y transistor ESM 2878 2sk116 bf199 ac128
2SB1333

Abstract: No abstract text available
Text: u b im i 169 2SB1333 Transistor , PNP, 2SB Series Electrical characteristics (unless otherwise , Figure 2 170 lumm < Leaded Transistors Transistor , PNP, 2SB Series 2SB1333 I ' , 2SB1333 Transistor , PNP Features · · · · · · available in MRT package Darlington connection , CURRENT : l c v A ! Figure 7 Leaded Transistors Figure 8 MHffl 171 2SB1333 Transistor , PNP, 2SB Series Figure 9 1000 f=1M H z lt = 0 A T a ~ 25*C Figure 10 Ordering information 100 5


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PDF 2SB1333 2SD2011 2SB1333 2SB1333,
Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Drive IC 2SC3346 C3182N
Text: TO-126 (IS), PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE TO-126 (IS) PW MOLD Darlington A , ) PACKAGE TRANSISTOR S E L ECTION G UIDE r- " ~ '''- Y C E O ( V ) - " lc (A) 0.1 0.15 0.3 0.5 1.5 2 , 2SP2012 ~]2SB1375 C32SD2127 H 2S C 3475 H 2SD 2092 2 S D 2 I2 9 2SB 14U 2SC 3I48 H 2 S C 3559 4 , 2 S052S 2SB 595 L12SD1407 H 2S B 1016 2S D 2076 2S D 2079 2SB 138I ·2 s b io s e 2 S H Ì4 1 0 ·2 , ZSB675 2 S D I4 1 7 2SB 1022 2SD843 2SB753 ·2 S D 6 3 4 ·2S B 674 [J2SD 1411 G 2SB 1018 2S D 1416 2SB


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PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Drive IC 2SC3346 C3182N
2SB1360

Abstract: No abstract text available
Text: pulse, Pw = 100 ms Conditions Leaded Transistors noH m 193 2SB1360 Transistor , PNP, 2SB , 2SB1360 Transistor , PNP Features · · available in HRT package low collector saturation , Electrical characteristic curves Figure 1 194 Figure 2 RONm Leaded Transistors Transistor , PNP, 2SB series 2SB1360 TIM E : I ( s ) B A S E TO t M I 'I 1ER V O L T A G E : V B 1 (V Ì , N T : lo (A) Figure 7 Leaded Transistors Figure 8 M Hffi 195 2SB1360 Transistor , PNP


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PDF 2SB1360 2SD2040 2SB1360
2SB1340

Abstract: No abstract text available
Text: ., Leaded Transistor Transistor , PNP, 2SB series 2SB1340 : R, (* C /W ) TRANSIENT THERMAL RESISTANCE , Transistor , PNP, 2SB series COLLECTOR CURRENT : lc (A) Figure 9 Figure 10 Ordering information , 2SB1340 Transistor , PNP Features · available in T0-220 FP (SC-67) package · Darlington , Pc Ti h" 30 150 -5 5 -+ 1 5 0 a > Leaded Transistors lumm 2SB1340 Transistor , PNP, 2SB series Electrical characteristics (unless otherwise noted, Ta = 25°C) Parameter Collector-to-base


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PDF 2SB1340 T0-220 SC-67) O-220 2SD1889 2SB1340
2am TRANSISTOR

Abstract: transistor 2am 2SB1357
Text: Leaded Transistors Mum 2SB1357 Transistor , PNP, 2SB series Electrical characteristics (unless , ) Figure 1 190 Figure 2 Mum Leaded Transistors Transistor , PNP, 2SB series 2SB1357 m u m , -1 Figure? Leaded Transistors n o N m Figure 8 191 2SB1357 Transistor , PNP, 2SB series , 2SB1357 Features Transistor , PNP Dimensions (Units : mm) 2SB1357 (HRT) 8.0 * 0.2 available in HRT package low collector saturation voltage, typically VCE(sat) = -0.5 V at lc/lB= -2AM).2A ·


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PDF 2SB1357 2SB1357 2am TRANSISTOR transistor 2am
Not Available

Abstract: No abstract text available
Text: Continuous (dc) Conditions Single pulse, Pw = 100 ms iiO H in 2SB1357 Transistor , PNP, 2SB , COLLECTOR TO EMITTER VOLTAGE : V ce (V) Figure 1 Figure 2 ROHm Transistor , PNP, 2SB series , : lc fA) Figure 7 Figure 8 RBHVn 2SB1357 Transistor , PNP, 2SB series COLLECTOR CURRENT , 2SB1357 Transistor , PNP Features · · available in HRT package low collector saturation voltage, typically VCE(sat) = -0.5 V at lc /lB = - 2 A/- 0 .2 A wide safe operating area (SOA) power


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PDF 2SB1357
2SB1353

Abstract: No abstract text available
Text: Transistor , PNP, 2SB series Electrical characteristics (unless otherwise noted, Ta = 25°C) Parameter , Transistor , PNP, 2SB series 2SB1353 0.001 0.01 0.1 1 10 100 1000 BASE TO EMITTER VOLTAGE , Transistor , PNP, 2SB series -aoi -a i -1 COLLECTOR CURRENT : le -io (A) Figure 9 Figure 10 , 2SB1353 Transistor , PNP Features · · · · available in HRT package high collector breakdown voltage, B V c e o = -120 V Dimensions (Units : mm) 2SB1353 (HRT) 8.0 ±0.2 4.5 ±0.2 wide safe


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PDF 2SB1353 2SB1353
Not Available

Abstract: No abstract text available
Text: 25 °C Tc = 25°C Conditions ramivi °C Transistor , PNP, 2SB Series 2SB1568 Electrical , noHm GO II Figure 2 2SB1568 Transistor , PNP, 2SB Series TIME : t (s) BASE TO EMITTER , (A) Figure 7 Figure 8 nonm Transistor , PNP, 2SB Series 2SB1568 :V c e (V , 2SB1568 Transistor , PNP, Features · · · · · · · available in 7 0 -2 2 0 FN package Darlington connection provides high dc current gain (hFE) damper diode is incorporated built in resistors


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PDF 2SB1568 O-220 2SD2399
Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 2sd103 bup 3130 C3885A 2SA102 bfq59 34d 937 086
Text: EINLEITUNG Das Ihnen vorliegende Daten- und Vergleichsbuch . transistor 2“ beinhaltet m ehrals 19000 , €” INTRODUCTION This comparative data book . transistor 2“ contains more than 19000 different transistors and , than one transistor with different polarities in one case pnp PNP structure p-ch P channel type (FET , television appliction CTV Chopper chop Darlington transistor Dari Dual Gate (FET) dg double Paired types Driver stages dr Dual transistor (differential amplifier) dual Final stages end FET Field-effect


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PDF
EN2210

Abstract: D1826 2SB1224 2SD1826
Text: fordering number: EN2210B NO.2210B 2SB1224/2SD1826 PNP/NPN Epitaxial Planar Silicon Darlington Transistor Driver Applications Applications • Suitable for use in control of motor drivers , < -i S -3 O -2 -1 From top -5.0mA -4.5mA -4,0mA -3.5mA 3.0mA -2.5mA -2.0mA 2SB 1224 , « o 2SB 1224/2S D1826 6 a Owe 0 » »0 M to K0 16 28 * H I £ 20 c © "■s 16 S 12 o 2SB J224/2S >D1826


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PDF EN2210B 2210B 2SB1224/2SD1826 2SB1224 EN2210 D1826 2SD1826
d1763a

Abstract: d2400a 1763A 2SD1763A D1763 d1857a 1569a 2sb1569a 2SB1186A B 1186a
Text: 500 2SB1186A TO -220FP DE 500 I Power Transistor ( -160V, - 1.5A) ) A b solute m axim um , / 2SB1236A / 2SB1569A / 2SB 1186A * 1 Collector power 2SB1236A dissipation 2SB1569A.2SB1186A Junction , H z Ves" - 10V , ie=" 0 A f = lM H z ( 9 6 -6 1 2 -A 5 8 ) I Power Transistor ( 160V, 1.5A , M H z ) 4 ) Complements the 2SB1275/2SB1236A/ 2SB 1569A/ 2SB 1186A · P a c k a g in g specifications


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PDF 2SB1275 2SB1236A 2SB1569A 2SB1186A 2SD2211 2SD1918 2SD1857A 2SD2400A 2SD1763A 2SD1918/2SD1857A/2SC d1763a d2400a 1763A 2SD1763A D1763 d1857a 1569a B 1186a
2SB415

Abstract: 2SB 710 2sc1061 HD68P01 2sb504 2sd524 2SC930 2sb507 2sA858 2sc827
Text: ” 364 - 2 S A 103 2SC710 365 " 2SA103 2SC710 366 " 367 â , 2SB560 - 2S 509 B 2SB507 2SB524 2SB 527 2SB526 2SB526 2SB 719 2SA510 2SA510 2SA512 2SB 504A 2SB504 2SB504 r 2SB596 2SA76 1 2SA76 1 2SA76 1 2SA 546 2SA546A 2SA546A 2SA498 M 483 2SA985 2SA985 i m p° p 488 M 490 2SB 512 at « tS « n , « B T L HITACHI NEC 2SA708A 2SA537A® 2SB 548 2SA715 m z t A FUJITSU 2SA580


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PDF 4000HÂ 2SB415 2SB 710 2sc1061 HD68P01 2sb504 2sd524 2SC930 2sb507 2sA858 2sc827
2003 - 2SC536E

Abstract: 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 ITR08386 ITR08385 ITR08384 ITR08383 2SA608
Text: 2SD1012 50m 2SB808 VCE=10V (For PNP, minus sign is omitted.) 5 3 808 2SB 2 012 , 2SB 3 Collector Current, IC ­ A 3 2 2SB 2 Collector-to-Base Voltage, VCB - V 5 , the output stage and the collector voltage of the driver transistor must be VCC/2. Therefore, the , driver transistor are more to be VCC/2 so that the output can be maximized. DS442×2 VCC=3V 100 1k


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PDF ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SC536E 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 ITR08386 ITR08385 ITR08384 ITR08383 2SA608
2011 - 2SD808

Abstract: 2sb transistor 2sb808 2SC536e 2SA608e
Text: 2SD1012 2SB808 2SB 808 012 60 2SD1 100 7 5 3 2 40 20 0 0 0.2 0.4 0.6 0.8 1.0 , Current Gain, hFE 3 2 2SB808 2 2SB 2SD 808 100 7 5 3 2 10 1.0 10 7 5 1012 2 3 , 5 3 2 100 5 3 2 10 5 1.0 Collector Current, IC ­ A 3 2 DC op era tio n 2SB , middle-point voltage at the output stage and the collector voltage of the driver transistor must be VCC/2 , voltage of the driver transistor are more to be VCC/2 so that the output can be maximized. DS442×2 100


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PDF ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SD808 2sb transistor 2sb808 2SC536e 2SA608e
Not Available

Abstract: No abstract text available
Text: Ordering number : EN694G 2SB815/2SD1048 Bipolar Transistor http://onsemi.com (–)15V, (–)0.7A, Low VCE(sat), (PNP)NPN Single CP Features • • Ultrasmall package allows miniaturization , , minus sign is omitted.) 2 3 5 7 2 10 3 5 7 100 ITR08399 Cob - VCB 2SB , 815 2SB 2 5 Output Capacitance, Cob - pF 2SB815 2 3 3 2SD1048 3 5 , 815 2SB 5 8 104 2SD 3 2 250 200 150 100 50 10 5 1.0 (For PNP


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PDF EN694G 2SB815/2SD1048 2SB815
2004 - 2SC536E

Abstract: 2SC536E,F sanyo 2SC536e R1820 2SA60 2SB808 ITR08383 ITR08385 ITR08386 2sb2012
Text: ITR08384 f T - IC VCE=10V (For PNP, minus sign is omitted.) 5 3 808 2SB 2 012 , DC 2 op era tio 0.1 n 7 5 2 10 2 808 3 2S 5 1.0 2SB 3 Collector Current, IC - A 3 2 3 2 Collector-to-Base Voltage, VCB - V 5 8 2SB 3 , output stage and the collector voltage of the driver transistor must be VCC/2. Therefore, the output , transistor are more to be VCC/2 so that the output can be maximized. DS442×2 VCC=3V 100 1k 100µF +


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PDF ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SC536E 2SC536E,F sanyo 2SC536e R1820 2SA60 2SB808 ITR08383 ITR08385 ITR08386 2sb2012
Not Available

Abstract: No abstract text available
Text: Ordering number : EN694H 2SB815/2SD1048 Bipolar Transistor http://onsemi.com (–)15V, (–)0.7A, Low VCE(sat), (PNP)NPN Single CP Features • • Ultrasmall package allows miniaturization , omitted.) 2 3 5 7 2 10 3 5 7 100 ITR08399 Cob - VCB 2SB 2 815 , 2SB 2 5 Output Capacitance, Cob - pF 2SB815 2 3 3 2SD1048 3 5 , 100 815 2SB 5 3 2 8 104 2SD 250 200 150 100 50 10 5 1.0


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PDF EN694H 2SB815/2SD1048 2SB815
SOT-23 EBC

Abstract: Transistor 2SA 2SB 2SC 2SD PNP DARLINGTON ARRAYS 226AA sanken transistor to236ab 2SA transistor TO-236AB
Text: QUICK GUIDE TO ALLEGRO DISCRETE DEVICES Series 1N Series 2N Series 2SA Series 2SB Series 2SC S eries 2SD S eries BA Series BZX84 Series MPS Series THSeries TMPD Series TMPT Series TMPZ Series TND , also Series TMPT and TP. ElAJ-registered Sanken PNP power transistor available from Allegro ElAJ-registered Sanken PNP Darlington power transistor available from Allegro ElAJ-registered Sanken NPN power transistor available from Allegro ElAJ-registered Sanken NPN Darlington power transistor available from


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PDF BZX84 O-92/TO-226AA OT-23/TO-236AB 16-pin O-98/TO-226AD 14-pin SOT-23 EBC Transistor 2SA 2SB 2SC 2SD PNP DARLINGTON ARRAYS 226AA sanken transistor to236ab 2SA transistor TO-236AB
TOSHIBA 2N3055

Abstract: Transistor 2SA 2SB 2SC 2SD 2n3055 npn transistor toshiba 2N3055 TOSHIBA transistors 2SA 2N3055 ST pnp vhf transistor HF VHF power amplifier module transistor bf422 fet ST100Q22
Text: 2.1 A) Transistors EIAJ METHOD (Example) C) TOSHIBA HOUSE No. (Example) 2 SC 1st 780 2nd 3rd ST100Q22 SI 298 2.2 High-frequency power amplifier modules (Example) 1st group: transistor types are indicated as shown below. 1st group characters 2SA 2SB 2SC 2SD T ype PNP high-frequency , indicating power module 2nd g ro u p : Numeral indicating transistor or FET 3 rd g ro u p : Code indicating transistor or FET and package com bination 4 th g ro u p : Product serial num ber


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PDF ST100Q22 2N3055 BF422 BU208 TOSHIBA 2N3055 Transistor 2SA 2SB 2SC 2SD 2n3055 npn transistor toshiba 2N3055 TOSHIBA transistors 2SA 2N3055 ST pnp vhf transistor HF VHF power amplifier module transistor bf422 fet
2n3055 npn transistor toshiba

Abstract: TOSHIBA 2N3055 Transistor 2SA 2SB 2SC 2SD 2N3055 toshiba RF Transistor BF42 BU208 MP transistor transistor 2sc pnp
Text: 2. Id e n tific a tio n System 2.1 A) Transistors EIAJ METHOD (Example) C) TOSHIBA HOUSE No. (Example) 2SC 1st 4289 2nd A 3rd ST100Q22 SI 298 2.2 High-frequency power amplifier modules (Example) 1st group: transistor types are indicated as shown below. 1st group characters 2SA 2SB 2SC , indicating power module 2nd gro u p : Numeral indicating transistor o rF E T 3 rd gro u p : Code indicating transistor or FET and package combination 4 th g ro u p : Product serial number BF422 BU208 57


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PDF ST100Q22 2N3055 BF422 BU208 2n3055 npn transistor toshiba TOSHIBA 2N3055 Transistor 2SA 2SB 2SC 2SD 2N3055 toshiba RF Transistor BF42 BU208 MP transistor transistor 2sc pnp
transistor D896

Abstract: B776 transistor D896 SD896 B776 oki semiconductor catalog 2SD896 2SB776 transistor sd896
Text: Ordering number: EN678F 2SB776/2SD896 2SB776 : PNP Epitaxial Planar Silicon Transistor 2SD896 : NPN Triple Diffused Planar Silicon Transistor 100V/7A, AF 40W Output Applications Features • Capable of being mounted easily because of one-point fixing type plastic molded package (Interchangeable , ; other descriptions than those in parentheses are common to the 2SB 776 and 2SD896. Absolute Maximum , Collector Current,Ic — A Pc - Tc 2SB 776/2S D896 \ \j


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PDF EN678F 2SB776/2SD896 2SB776 2SD896 00V/7A, 2SB776 2SD896. transistor D896 B776 transistor D896 SD896 B776 oki semiconductor catalog 2SD896 transistor sd896
transistor D1830

Abstract: 2SD830 d1830 transistor 2SD1830 2SD1830 2SB1228 NPN Transistor 5V DARLINGTON 2sd darlington
Text: Ordering number: EN 2214B 2SB1228/2SD1830 PNP/NPN Epitaxial Planar Silicon Darlington Transistor Driver Applications Applications • Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators. Features ■High DC current gain. â , Collector-to-Emitter Voltage,VCE - V 100 Collector-to-Emitter Voltage,VCE - V 2SB1228/2SD1830 Pr. ~ Ta 2SB , •S" 16 12 Ü 2SB 1228/2 3D1830


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PDF 2214B 2SB1228/2SD1830 2SB1228 transistor D1830 2SD830 d1830 transistor 2SD1830 2SD1830 2SB1228 NPN Transistor 5V DARLINGTON 2sd darlington
2012 - DC 4017 IC

Abstract: free IC 4017 1502sb sot-23 15V vebo pnp 2sb815
Text: Ordering number : EN694G 2SB815 / 2SD1048 SANYO Semiconductors DATA SHEET 2SB815/2SD1048 Features · · PNP / NPN Epitaxial Planar Silicon Transistor General-Purpose AF Amplifier , Current, IB - A 60 2SD1048 2SB 815 1048 2SB815 100 7 5 3 2 2SD 40 20 0 0 , 2 2SB 2SD 2SB815 815 10 7 5 3 2 1048 100 7 5 3 2 10 1.0 (For PNP, minus , 200 150 2SB 815 100 2SD 104 8 50 (For PNP, minus sign is omitted.) 2 3 5


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PDF EN694G 2SB815 2SD1048 2SB815/2SD1048 2SB815 DC 4017 IC free IC 4017 1502sb sot-23 15V vebo pnp
transistor B502

Abstract: 2SD1760 2SB11
Text: Transistors Power Transistor (50V, 3A) 2 S D 1 7 6 0 / 2 S D 1 8 6 4 / 2 S D 1 7 6 2 ·F e a tu re s 1) LOW VcE(sat). VcE(sat) = 0 .5 V (Ic / I b ·E x te rn a l dimensions (Units: mm) (Typ.) 2SD1760 B.5+0.2^ 2 3 + 0 .2 CCK5 2SD1864 = 2A/0.2A) 2) Complements the 2SB11 8 4 / 2SB 1243/ 2SB 1185. ·S tru c tu re Epitaxial planar type NPN silicon transistor + l O© +j ±3-o ,i 0.5±0.1 6 .8 ± 0.2 2 .jg ± Ç '= -1+0.2 5 ' 1- 0 . 1 . r i 1 f 05 d m + l 0.55±0.1 0 . 5 ± 0.1 S


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PDF 2SD1760 2SD1864 2SB11 1243/2SB 2SD1760) 2SD1864) 10Sec 10OOSec transistor B502 2SD1760
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