The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC1608IG#TRPBF Linear Technology LTC1608 - High Speed, 16-Bit, 500ksps Sampling A/D Converter with Shutdown; Package: SSOP; Pins: 36; Temperature Range: -40°C to 85°C
LTC1608ACG#TR Linear Technology LTC1608 - High Speed, 16-Bit, 500ksps Sampling A/D Converter with Shutdown; Package: SSOP; Pins: 36; Temperature Range: 0°C to 70°C
LTC1608IG#PBF Linear Technology LTC1608 - High Speed, 16-Bit, 500ksps Sampling A/D Converter with Shutdown; Package: SSOP; Pins: 36; Temperature Range: -40°C to 85°C
LTC1608ACG Linear Technology LTC1608 - High Speed, 16-Bit, 500ksps Sampling A/D Converter with Shutdown; Package: SSOP; Pins: 36; Temperature Range: 0°C to 70°C
LTC1608ACG#TRPBF Linear Technology LTC1608 - High Speed, 16-Bit, 500ksps Sampling A/D Converter with Shutdown; Package: SSOP; Pins: 36; Temperature Range: 0°C to 70°C
LTC1608CG#TR Linear Technology LTC1608 - High Speed, 16-Bit, 500ksps Sampling A/D Converter with Shutdown; Package: SSOP; Pins: 36; Temperature Range: 0°C to 70°C

transistor 1608 DATASHEET Datasheets Context Search

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2012 - transistor 1608

Abstract: No abstract text available
Text: Datasheet System Power Supply ICs for Automotive Camera Modules Camera Module System Power , .Oct.2012 Rev.002 Datasheet BD8682MUV-M ●Pin Configuration 23 22 21 20 19 18 17 , .Oct.2012 Rev.002 Datasheet BD8682MUV-M ●Block Diagram REG VCC UVLO VREF PVCC1 CTL , -0T3T0AM00030-1-2 22.Oct.2012 Rev.002 Datasheet BD8682MUV-M ●Description of Blocks 1. Reverse determination , TSZ02201-0T3T0AM00030-1-2 22.Oct.2012 Rev.002 Datasheet BD8682MUV-M 7. Protection Blocks Pin name


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PDF BD8682MUV-M BD8682MUV-M VQFN32SV5050 VQFN32SV5050 BD8682 TSZ22111ã TSZ02201-0T3T0AM00030-1-2 transistor 1608
XCL206B183AR-G

Abstract: LMK107BJ475KA XCL206 XCL206B XCL206B123-EVB XCL206B153-EVB XCL206B183-EVB XCL206B283-EVB XCL206B303-EVB
Text: product data sheets for the minimum and maximum specifications. XCL206 DATASHEET www.torex.co.jp It is , . The device is operated by 3.0MHz, and includes 0.42P-channel driver transistor and 0.52N-channel switching transistor . The XCL206 series has automatic PWM/PFM switching control, allowing fast response , built-in UVLO (Under Voltage Lock Out) function, the internal driver transistor is forced OFF when input , 10V B, X5R 1608 (0603-EIA) Taiyo Yuden LMK107BJ475KA 1 CL 10F Ceramic 10V B, X5R


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PDF ETR3101-D01a XCL206 XCL206B123-EVB XCL206B153-EVB XCL206B183-EVB XCL206B283-EVB XCL206B303-EVB XCL206B183AR-G LMK107BJ475KA XCL206B XCL206B123-EVB XCL206B153-EVB XCL206B183-EVB XCL206B283-EVB XCL206B303-EVB
XCL206B303-EVB

Abstract: CL-2025 LMK107BJ106MA XCL206B123-EVB XCL206B283-EVB step-down XCL206B183AR XCL206B183AR-G LMK107BJ475KA XCL206
Text: product data sheets for the minimum and maximum specifications. XCL206 DATASHEET www.torex.co.jp It is , . The device is operated by 3.0MHz, and includes 0.42P-channel driver transistor and 0.52N-channel switching transistor . The XCL206 series has automatic PWM/PFM switching control, allowing fast response , built-in UVLO (Under Voltage Lock Out) function, the internal driver transistor is forced OFF when input , 10V B, X5R 1608 (0603-EIA) Taiyo Yuden LMK107BJ475KA 1 CL 10F Ceramic 10V B, X5R


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PDF ETR3101-D01 XCL206 XCL206B123-EVB XCL206B153-EVB XCL206B183-EVB XCL206B283-EVB XCL206B303-EVB XCL206B303-EVB CL-2025 LMK107BJ106MA XCL206B123-EVB XCL206B283-EVB step-down XCL206B183AR XCL206B183AR-G LMK107BJ475KA
2012 - Not Available

Abstract: No abstract text available
Text: Datasheet System Power Supply ICs for Automotive Camera Modules Camera Module System Power , .Nov.2013 Rev.003 Datasheet BD8682MUV-M ●Pin Configuration 23 22 21 20 19 18 17 , .Nov.2013 Rev.003 Datasheet BD8682MUV-M ●Block Diagram REG VCC UVLO VREF PVCC1 CTL , -0T3T0AM00030-1-2 29.Nov.2013 Rev.003 Datasheet BD8682MUV-M ●Description of Blocks 1. Reverse determination , TSZ02201-0T3T0AM00030-1-2 29.Nov.2013 Rev.003 Datasheet BD8682MUV-M 7. Protection Blocks Pin name


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PDF BD8682MUV-M BD8682MUV-M VQFN32SV5050
2012 - Not Available

Abstract: No abstract text available
Text: Datasheet System Power Supply ICs for Automotive Camera Modules Camera Module System Power , .Nov.2013 Rev.003 Datasheet BD8682MUV-M ●Pin Configuration 23 22 21 20 19 18 17 , .Nov.2013 Rev.003 Datasheet BD8682MUV-M ●Block Diagram REG VCC UVLO VREF PVCC1 CTL , -0T3T0AM00030-1-2 29.Nov.2013 Rev.003 Datasheet BD8682MUV-M ●Description of Blocks 1. Reverse determination , TSZ02201-0T3T0AM00030-1-2 29.Nov.2013 Rev.003 Datasheet BD8682MUV-M 7. Protection Blocks Pin name


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PDF BD8682MUV-M BD8682MUV-M VQFN32SV5050
2014 - Not Available

Abstract: No abstract text available
Text: Datasheet Data eet Po ower Mana agement IC for Auto omotive M Microcontr roller Buck-B B , ray ys 1/52 TSZ0 02201-0T3T0 0AM00120-1 1-2 Apr.7.2014 Rev.00 01 Datasheet , .7.2014 Rev.001 Datasheet BD39001EKV-C Block Diagram www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 3/52 TSZ02201-0T3T0AM00120-1-2 Apr.7.2014 Rev.001 Datasheet , TSZ02201-0T3T0AM00120-1-2 Apr.7.2014 Rev.001 Datasheet BD39001EKV-C Electrical Characteristic


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PDF BD39001EK BD39001EKV-C BD390 001EKV-C
TRANSISTOR Z4

Abstract: transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n transistor z3 transistor z4 51 IRF 1470 rt230pd
Text: Power Transistor RT230PD Product Features Application · 50 ~ 4000 MHz · 18dB Gain , specifications may change without notice. Version 5.2 Power Transistor RT230PD Electrical , specifications may change without notice. Version 5.2 Power Transistor RT230PD Application Circuit , (mm) C4 100pF 1608 L1 18nH 1608 C1,C5 1000pF 1608 L2 18nH 2520 C2,C6 0.1uF 1608 L3 3.9nH 1608 C3,C7 4.7uF 3216 Z1 1.4 2.0 C8,C10


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PDF RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 TRANSISTOR Z4 transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n transistor z3 transistor z4 51 IRF 1470
2008 - transistor C4

Abstract: No abstract text available
Text: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain , Power Transistor RT230PD Electrical Specifications Parameter UNIT Typical Frequency , without notice. ▪ Version 5.2 Power Transistor RT230PD Application Circuit for RT230PD(824 , 100pF 1608 L1 18nH 1608 C1,C5 1000pF 1608 L2 18nH 2520 C2,C6 0.1uF 1608 L3 3.9nH 1608 C3,C7 4.7uF 3216 Z1 1.4 ⅹ2.0 C8,C10 30pF 1608


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PDF RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 transistor C4
2014 - marking schottky diodes rohm

Abstract: No abstract text available
Text: Datasheet Input Voltage 3.5 V to 36 V Output SW Current 4 A / 2.5A / 1.25A 1ch Step-Down , frequency characteristic of ESR from the datasheet of the manufacturer, and consider ESR value is low in , Parameters Part name(series) Type Manufacturer R1 1608 43 kΩ, 1 %, 1 / 16 W MCR01 series Chip resisters ROHM R2 1608 8.2 kΩ, 1 %, 1 / 16 W MCR01 series Chip resisters ROHM R3 1608 33 kΩ, 1 %, 1 / 16 W MCR01 series Chip resisters ROHM R100


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PDF BD906xxEFJ-C BD906xxEFJ-C marking schottky diodes rohm
2006 - TDMA simulation ADS

Abstract: ATF-50189 BTS 3900 a 267M2002105K msu 305 GSM900 ATF-54143 ATF-501P8 ATF050189 ATF0189
Text: depletion mode transistor , this enhancement mode device only requires a single positive power supply, which means a positive voltage is needed on the drain and gate in order for the transistor to turn on , , transistor Q1 is configured with its base and collector tied together. This configuration acts as a simple , voltage (VE) of transistor Q1 equal to Vds', this circuit regulates the drain current similar to a , or L with another high pass network. The L information was obtained from the ATF-50189 datasheet


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PDF ATF-50189 800MHz 900MHz 2400MHz 900MHz AV01-0365EN TDMA simulation ADS BTS 3900 a 267M2002105K msu 305 GSM900 ATF-54143 ATF-501P8 ATF050189 ATF0189
fm1408

Abstract: No abstract text available
Text: SOP Packages 0-70°C Ambient Operating Temperature Range Description The FM 1408 and FM 1608 are , . The FM 1408 and FM 1608 utilize the standard bytewide SRAM pinout with added mode and refresh pins , FM 1608 Organization 2048 X 8 8192x8 Pin 2 NC a Pin 23 NC A1 1 12 Absolute Maximum Ratings , Current - Refresh*1 *- FM 1408 - F M 1608 O O ro Power Supply Current - Active - FM 1408 - F M 1608 'SB1 , The FM 1408 and FM 1608 memories use a two tran sistor, two capacitor memory structure illustrated


OCR Scan
PDF 1408/1608FRAM® 536-Bit 10-Year -80ns 160ns 28-Pin) fm1408
Not Available

Abstract: No abstract text available
Text: transistor • Built-in variable speed function controlled by an external input The LB11660FV can implement quiet, low-vibration variable speed control using externally clocked high side transistor direct PWM , control current power supply system ground, and the external n-channel transistor ground is the motor , : 15kΩ size 1608 R3 : 39kΩ size 1608 R4 : 20kΩ size 1608 R5 : 2.2Ω size 1608 C1 : 4.7µF/25V size 3216 C2 : 2.2µF size 1608 C3 : 2.2µF size 1608 C4 : 220pF size 1005 C5


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PDF EN8318 LB11660FV LB11660FV
2014 - Not Available

Abstract: No abstract text available
Text: Datasheet 80-mW Coupling Capacitorless Stereo Headphone Amplifiers BD88400FJ General , against radioactive rays 1/27 TSZ02201-0C1C0EA00160-1-2 07.Aug.2014 Rev.002 Datasheet , .002 Datasheet BD88400FJ Pin Configuration (Top View) 1 SHDNRB INL 14 2 INR 3 SGND OUTR 13 , TSZ02201-0C1C0EA00160-1-2 07.Aug.2014 Rev.002 Datasheet BD88400FJ INL 1 SHDNLB SHDNRB , -0C1C0EA00160-1-2 07.Aug.2014 Rev.002 Datasheet BD88400FJ Absolute Maximum Ratings Parameter Symbol


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PDF 80-mW BD88400FJ BD88400FJ
2007 - Not Available

Abstract: No abstract text available
Text: (15V, 1.5A transistors are built in) Half predriver with integrated high side transistor · Built-in , variable speed control using externally clocked high side transistor direct PWM drive. · Minimum speed , control current power supply system ground, and the external n-channel transistor ground is the motor , ) Q1, 2 : CPH3418 (SANYO) R1 : 0.51 size 3225 R2 : 15k size 1608 R3 : 39k size 1608 R4 : 20k size 1608 R5 : 2.2 size 1608 C1 : 4.7F/25V size 3216 C2 : 2.2F size 1608 C3 : 2.2F size 1608 C4 : 220pF size


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PDF EN8318 LB11660FV LB11660FV
2007 - LB11660FV

Abstract: CPH3418 SSOP16 pwm variable frequency drive circuit diagram transistor 8730
Text: (15V, 1.5A transistors are built in) Half predriver with integrated high side transistor · Built-in , variable speed control using externally clocked high side transistor direct PWM drive. · Minimum speed , external n-channel transistor ground is the motor power supply system ground. These two systems should be , : 15k size 1608 R3 : 39k size 1608 R4 : 20k size 1608 R5 : 2.2 size 1608 C1 : 4.7F/25V size 3216 C2 : 2.2F size 1608 C3 : 2.2F size 1608 C4 : 220pF size 1005 C5 : 0.47F size 1608 C6


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PDF EN8318 LB11660FV LB11660FV CPH3418 SSOP16 pwm variable frequency drive circuit diagram transistor 8730
Not Available

Abstract: No abstract text available
Text: transistor · Built-in variable speed function controlled by an external input The LB11660FV can implement quiet, low-vibration variable speed control using externally clocked high side transistor direct PWM , control current power supply system ground, and the external n-channel transistor ground is the motor , product) Q1, 2 : CPH3418 (Our product) R1 : 0.51 size 3225 R2 : 15k size 1608 R3 : 39k size 1608 R4 : 20k size 1608 R5 : 2.2 size 1608 C1 : 4.7F/25V size 3216 C2 : 2.2F size 1608 C3 : 2.2F size 1608 C4 : 220pF


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PDF EN8318 LB11660FV LB11660FV
2003 - NEC semiconductor

Abstract: NEC JAPAN marking NEC rf transistor nec npn rf NESG210719 NESG210719-T1 transistor RF S-parameters NEC D7
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES · The device is an , Tr. · 3-pin ultra super minimold package (19, 1608 PKG) ORDERING INFORMATION Part Number , 50 pcs · 8 mm wide embossed taping package (19, 1608 PKG) NESG210719-T1 NESG210719-A , (19, 1608 PKG) (UNIT: mm) 0.2+0.1 ­0 1.6±0.1 0.8±0.1 3 0.3+0.1 ­0 0.5 1.0 0.5


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PDF NESG210719 NESG210719-T1-A NESG210719-T1 NESG210719-A NEC semiconductor NEC JAPAN marking NEC rf transistor nec npn rf NESG210719 NESG210719-T1 transistor RF S-parameters NEC D7
B0BC9R000008 DIODE

Abstract: B0BC6R100010 B0BC01700015 B0BC9R000008 Diode C65 004 varistor k271 transistor C388 LYNX3DM 3225 K30 B0BC3R700004
Text: INDUCTOR INDUCTOR INDUCTOR INDUCTOR LED LED LED POLY SWITCH TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR RESISTOR, 1/16 W, 10 K RESISTOR, 1/16 W, 47 K 1 3 6 1 2 4 1 1 , D#[9] A23 D#[10] D#[11] D#[12] A24 C18 1608 1u C421 1u C437 1u C468 1u C428 1u C440 1u C456 1u , C408 2125 1608 C405 2125 1608 C407 2125 002:D10 002:D10;002:I4 002:D10;002:I4 002:D10


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PDF CPD0207023C0 CF-R1P82ZV1 DTA144EE BRPY1211F LN1361C B0BC9R000008 DIODE B0BC6R100010 B0BC01700015 B0BC9R000008 Diode C65 004 varistor k271 transistor C388 LYNX3DM 3225 K30 B0BC3R700004
2006 - SOT223 MARKING L5

Abstract: L42 marking transistor THN6701B FR4 dielectric constant 4.6 FR4 dielectric constant vs temperature transistor 1608 transistor L42
Text: THN6701B Semiconductor SiGe NPN Transistor Unit in mm SOT-223 Applications 6.5 - VHF and UHF power amplifier 3.0 4 - High power gain 7.0 3.5 Features GP = 14 , THN6701B Evaluation Board (for FRS at 465 MHz) Part C1, C4 C7, C9 15pF ( 1608 , Murata) L1 100 nH ( 1608 , Murata) L2 C2 C3 1 nF ( 1608 , Murata) C6 L2 C1 18 pF ( 1608 , Murata) C5,C8 C7 L1 10 pF ( 1608 , Murata) C3 C4 100 pF ( 1608 , Murata) C2 C8 C5


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PDF THN6701B OT-223 SOT223 MARKING L5 L42 marking transistor THN6701B FR4 dielectric constant 4.6 FR4 dielectric constant vs temperature transistor 1608 transistor L42
2001 - zener diode c16 ph

Abstract: PS331 SOT23-GSD C18 ph zener SMBJ20A SFC1605A SFC-1605A PS-3150 ph c18 zener diode MM1414D
Text: [1206] 2012[0805] 1608 [0603] 12 FABRICATION C1 C3 CAPACITOR 330nf/X7R/25V C8 CAPACITOR 100nF , Q1 Q2 Q3 Q4 Q5 Q8 R1 R10 MOSFET 2N7002 MOSFET IRF7416 TRANSISTOR 2N3906 MOSFET NDS355N , IC QTY. MANUFACTURER 5 6 7 8 9 10 11 1608 [0603] 1 POWERSMART 2 VARIOUS 1 VARIOUS 1 VARIOUS 12 MFR. PART NUMBER B826032-07-03 VARIOUS 1608 [0603] 1608 [0603] 1608 [0603 , BZX84C5V6 BZX84C5V6 SOT23-GSD SO8 SOT23-BEC SOT23-GSD SOT23 1608 [0603] 1608 [0603] DIODES, INC


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PDF PS3153 PS3154 14-bit zener diode c16 ph PS331 SOT23-GSD C18 ph zener SMBJ20A SFC1605A SFC-1605A PS-3150 ph c18 zener diode MM1414D
FR4 dielectric constant 4.6

Abstract: C5 MARKING TRANSISTOR SiGe POWER TRANSISTOR THN6701B R6701 transistor 1608 L28 marking
Text: Preliminary Specification THN6701B NPN SiGe RF POWER TRANSISTOR Unit in mm SOT223 Applications 6.5 - UHF and VHF wide band amplifier 3.0 4 - High power gain 7.0 3.5 , THN6701B Evaluation Board (for FRS at 465 MHz) Part C1, C4 C7, C9 15pF ( 1608 , Murata) L1 100 nH ( 1608 , Murata) L2 C2 C3 1 nF ( 1608 , Murata) C6 L2 C1 18 pF ( 1608 , Murata) C5,C8 C7 L1 10 pF ( 1608 , Murata) C3 C4 100 pF ( 1608 , Murata) C2 C8 C5


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PDF THN6701B OT223 FR4 dielectric constant 4.6 C5 MARKING TRANSISTOR SiGe POWER TRANSISTOR THN6701B R6701 transistor 1608 L28 marking
d667 transistor

Abstract: nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin K105 mosfet diode tp806 tokin lcd inverter transistor k58 LM2729 D635 sot
Text: No file text available


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PDF CPD0304020C1 CF-73 CF-731 SuC1707 C1709 C1712 C1713 C1711 R1701 R1700 d667 transistor nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin K105 mosfet diode tp806 tokin lcd inverter transistor k58 LM2729 D635 sot
2012 - MC33932EK

Abstract: No abstract text available
Text: 0603 ( 1608 Metric) 2 2 C11, C14 1.0μF CAP CER 1UF 35V 10% X5R 0603 0603 ( 1608 Metric , C6, C12, C13, C16, C17, C18, C19, C20 10000pF CAP CER 10000PF 50V 10% X7R 0603 0603 ( 1608 , , OUTPUT_LED1 LED YELGRN/RED 565/635 DIFF 1616 0606 (1616 Metric) 14 2 Q1, Q2 TRANSISTOR , 1.0K OHM 1/10W 5% 0603 SMD 0603 ( 1608 Metric) 16 1 R2 470 RES 470 OHM 1/10W 5% 0603 SMD 0603 ( 1608 Metric) 17 2 R7, R16 100 RES 100 OHM 1/10W 5% 0603 SMD 0603 ( 1608


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PDF KT33932EKUG KIT33932EKEVBE KIT33932EKEVBE MC33932EK
2009 - 2SC5606

Abstract: 2SC5606-T1 ultra low noise NPN transistor nec microwave
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) FEATURES · Suitable for high-frequency oscillation · fT = 25 GHz technology adopted · 3-pin ultra super minimold (19, 1608 PKG) package 1608 PKG) (Pb-Free) · Pin 3 (collector) face the perforation side , PACKAGE DIMENSIONS 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) (UNIT: mm) 0.2+0.1 ­0 1.6±0.1


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PDF 2SC5606 2SC5606-A 2SC5606-T1 2SC5606-T1-A M8E0904E 2SC5606 2SC5606-T1 ultra low noise NPN transistor nec microwave
2006 - SGA-8343Z

Abstract: samsung cl SGA8343Z SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343
Text: Transistor (SiGe HBT) designed for operation from DC to 6GHz. The SGA8343Z is optimized for 3V operation but , Z5 Z6 Z7 Z8 Part Number ROHM MCH185A390J ROHM MCH185AOR5C Samsung CL 10B104KONC TOKO LL 1608 -FS18NJ TOKO LL 1608 -FSR12J TOKO LL 1608 -FS6N8J ROHM MCR03J5R1 ROHM MCR03J911 ROHM MCR03J242 ROHM MCR0.J161 , MCH185A390J ROHM MCH185A2R2C Samsung CL 10B104KONC TOKO LL 1608 -FS3N9S TOKO LL 1608 -FS18NJ TOKO LL 1608 , MCH185AO10C Samsung CL 10B104KONC TOKO LL 1608 -FS10NJ TOKO LL 1608 -FS2N7S ROHM MCR03J100 ROHM MCR03J102 ROHM


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PDF SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110205 SGA8343Z-EVB4 1575MHz SGA-8343Z samsung cl SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343
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