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LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor 14315 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - specifications of ic 8038

Abstract: working of ic 8038 for semiconductor IC 7106
Text: MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications · · Low noise figure: NF = 1.4dB (at f = 2 GHz) High gain: gain = 8dB (at f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction , 175.68 170.51 165.94 162.06 158.37 154.54 150.55 147.06 143.15 140.08 136.43 133.53 131.09 Mag. 30.70


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PDF MT3S03AT specifications of ic 8038 working of ic 8038 for semiconductor IC 7106
specifications of ic 8038

Abstract: ic LC 7815
Text: TOSHIBA TENTATIVE TOSHIBA TRANSISTOR MT3S03T V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS MT3S03T SYMBOL VCBO VCEO Ve b o ic :B PC Tj Tstg RATING 10 5 2 100 10 100 125 -5 5 -1 2 5 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm · · Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) High Gain : Gain -8 dB (at f = 2 GHz) UNIT V V V mA mA mW °C °C MAXIMUM RATINGS (Ta = 25 , 0.347 150.55 3.19 0.188 70.88 0.344 3.02 70.44 147.06 73.43 0.201 0.341 0.214 143.15 2.85 72.09 70.07


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PDF MT3S03T specifications of ic 8038 ic LC 7815
Not Available

Abstract: No abstract text available
Text: TO SHIBA TENTATIVE MT3S03T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm 1.2 ± 0.05 • Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) • High Gain 0.8 ± 0.05 : Gain = 8 dB (at f = 2 GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter , 170.51 165.94 162.06 158.37 154.54 150.55 147.06 143.15 140.08 136.43 133.53 131.09 Mag. O


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PDF MT3S03T
2003 - working of ic 8038

Abstract: marking 5241 MT3S03AT ic 7815 IC 7486 specifications of ic 8038 8250 bridge
Text: MT3S03AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications · Low noise figure: NF = 1.4dB (at f = 2 GHz) · Unit: mm High gain: gain = 8dB (at f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage , 0.053 -143.48 9.60 1600 0.341 143.15 2.85 72.09 0.214 70.07 0.046


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PDF MT3S03AT 002oducts working of ic 8038 marking 5241 MT3S03AT ic 7815 IC 7486 specifications of ic 8038 8250 bridge
Not Available

Abstract: No abstract text available
Text: TO SH IBA TENTATIVE MT3S03AT TOSHIBA TRANSISTOR VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS MT3S03AT SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 10 5 2 40 10 100 125 -55-125 UNIT V V V mA mA mW °C °C SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 1.2 ±0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) TTirrV» fio i n J-J-lgll V ^U lll U .1 1 1 MAXIMUM , 143.15 140.08 136.43 133.53 131.09 Mag. (°) 30.70 18.94 13.32 10.24 8.30 6.96 6.01 5.32 4.77 4.30 3.96


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PDF MT3S03AT IS21I2
Not Available

Abstract: No abstract text available
Text: TO SH IBA TENTATIVE MT3S03AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS MT3S03AT Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) TTirrV» fio i n J J l g l l V ^ U l l l U .1 1 1 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage , 162.06 158.37 154.54 150.55 147.06 143.15 140.08 136.43 133.53 131.09 Mag. (°) 30.70 18.94 13.32 10.24


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PDF MT3S03AT IS21I2
2010 - of ic 8038

Abstract: MT3S03AT IC 7486 ic 7815
Text: MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications · Low noise figure: NF = 1.4dB (typ.) (at f = 2 GHz) · Unit: mm High gain: gain = 8dB (typ.) (at f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage , 1600 0.341 143.15 2.85 72.09 0.214 70.07 0.046 -142.20 9.09 1700 0.334


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PDF MT3S03AT of ic 8038 MT3S03AT IC 7486 ic 7815
MT3S03T

Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TOSHIBA TRANSISTOR MT3S03T VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIOS MT3S03T SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 10 5 2 100 10 100 125 -55-125 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 1.2 ±0.05 0.8 ± 0.05 · · Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) High Gain : Gain = 8 dB (at f = 2 GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC , 147.06 143.15 140.08 136.43 133.53 131.09 Mag. (°) 30.70 18.94 13.32 10.24 8.30 6.96 6.01 5.32 4.77 4.30


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PDF MT3S03T IS21I2 MT3S03T
working of ic 8038

Abstract: working of IC 7486 8250 ic pin for semiconductor IC 7106 MT3S03AT IC 7486 ic 8038 specifications of ic 8038
Text: TOSHIBA MT3S03AT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIOS • Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) • High Gain : Gain = 8 dB (at f = 2 GHz) MAXIMUM RATINGS (Ta = 25°C) MARKING 3 U. M R U 1 TT 2 Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 10 V Collector-Emitter Voltage , 0.053 -143.48 9.60 1600 0.341 143.15 2.85 72.09 0.214 70.07 0.046 -142.20 9.09 1700 0.334 140.08 2.73


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PDF MT3S03AT working of ic 8038 working of IC 7486 8250 ic pin for semiconductor IC 7106 MT3S03AT IC 7486 ic 8038 specifications of ic 8038
2008 - sanyo ic 7550

Abstract: IC 7458 Transistor C 4927 2SC5781 D2502 16451 ic 7522 ps
Text: Ordering number : ENN7321 2SC5781 NPN Epitaxial Planar Silicon Transistor 2SC5781 High-Frequency Low-Noise Amplifier and OSC Applications · · · · Package Dimensions Low-noise use : NF=1.5dB typ (f=2GHz). High cutoff frequency : fT=6.5GHz typ (VCE=1V). : fT=11.2GHz typ (VCE=3V). Low operating voltage. Ultraminiature and thin flat leadless package (1.4mm0.8mm0.6mm). unit : mm , 72.82 0.217 19.07 0.608 -61.87 1800 0.679 - 143.15 1.446 65.86 0.212


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PDF ENN7321 2SC5781 2SC5781] sanyo ic 7550 IC 7458 Transistor C 4927 2SC5781 D2502 16451 ic 7522 ps
2002 - sanyo ic 7550

Abstract: 5645 marking marking 12697 12904 6221 ic 12697 ic 14069 9109 DC D2502 2SC5781
Text: Ordering number : ENN7321 2SC5781 NPN Epitaxial Planar Silicon Transistor 2SC5781 High-Frequency Low-Noise Amplifier and OSC Applications · · · · Package Dimensions Low-noise use : NF=1.5dB typ (f=2GHz). High cutoff frequency : fT=6.5GHz typ (VCE=1V). : fT=11.2GHz typ (VCE=3V). Low operating voltage. Ultraminiature and thin flat leadless package (1.4mm!0.8mm!0.6mm). unit , 0.679 - 143.15 1.446 65.86 0.212 17.01 0.600 -65.17 2000 0.659 -149.92


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PDF ENN7321 2SC5781 2SC5781] sanyo ic 7550 5645 marking marking 12697 12904 6221 ic 12697 ic 14069 9109 DC D2502 2SC5781
2003 - motorola 8822

Abstract: IRL 1630 transistor 17556 17556 transistor transistor 115 h 8772 p motorola 10116 motorola 7913 100A7R5JP150X 6821 motorola 7814 transistor
Text: MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. 3.5 GHz, 3 W, 12 V POWER FET GaAs , ­32.36 0.539 159.16 2.55 0.876 143.15 1.971 17.38 0.040 ­32.95 0.541


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PDF MRFG35003MT1/D MRFG35003MT1 motorola 8822 IRL 1630 transistor 17556 17556 transistor transistor 115 h 8772 p motorola 10116 motorola 7913 100A7R5JP150X 6821 motorola 7814 transistor
14315* transistor

Abstract: 100CC AN569 MMSF3P02HD MMSF3P02HDR2 power mosfet 7515 WFs transistor
Text: are independent of operating junction temperature. `2 Motorola TMOS Power MOSFET Transistor , Power MOSFET Transistor Device Data Voltage versus Current 5 - - , ~Y&,: ,y , voltage and drain current that a transistor can handle safely when it is forward biased, Cuwes are based , Junction Temperature Motorola TMOS Power MOSFET Transistor Device Data MMSF3P02HD WPICAL ELECTRICAL CHARACTERISTICS - Waveform , Motorola TMOS Power MOSFET Transistor


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PDF MMSF3P02HD/D 14315* transistor 100CC AN569 MMSF3P02HD MMSF3P02HDR2 power mosfet 7515 WFs transistor
2006 - Not Available

Abstract: No abstract text available
Text: RF Power Field Effect Transistor CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum , 159.16 2.55 0.876 143.15 1.971 17.38 0.040 - 32.95 0.541 158.56 2.60


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PDF MRFG35003MT1 MRFG35003NT1.
2006 - 100B101

Abstract: ma 8630
Text: Freescale Semiconductor Technical Data MRFG35003NT1 replaced by MRFG35003ANT1. Document Number: MRFG35003N Rev. 5, 1/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. · Typical W - CDMA Performance: - 42 dBc , 146.91 146.12 145.07 144.07 143.15 142.10 140.88 139.83 138.60 137.26 |S21| 8.644 7.924 7.317 6.811 6.380


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PDF MRFG35003NT1 MRFG35003ANT1. MRFG35003N MRFG35003NT1 MRFG35003N 100B101 ma 8630
2005 - 2312 footprint dimension

Abstract: A113 AN1955 MRFG35002N6T1 GT1040
Text: Document Number: MRFG35002N6 Rev. 1, 5/2006 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. · Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 mA , 0.0361 - 31.7 0.697 146.2 2.65 0.895 143.15 1.46 21.34 0.0365 - 32.5


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PDF MRFG35002N6 MRFG35002N6T1 2312 footprint dimension A113 AN1955 MRFG35002N6T1 GT1040
2006 - GT1040

Abstract: 466 907 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1
Text: 260 ARCHIVE INFORMATION ARCHIVE INFORMATION RF Power Field Effect Transistor °C 1. For , 1.47 22.69 0.0361 - 31.7 0.697 146.2 2.65 0.895 143.15 1.46 21.34


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PDF MRFG35002N6 MRFG35002N6T1 MRFG35002N6AT1. MRFG35002N6T1 GT1040 466 907 A113 AN1955 MRFG35002N6AT1
2006 - Not Available

Abstract: No abstract text available
Text: Power Field Effect Transistor CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings , 1.47 22.69 0.0361 - 31.7 0.697 146.2 2.65 0.895 143.15 1.46 21.34


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PDF MRFG35002N6 MRFG35002N6T1 MRFG35002N6AT1. MRFG35002N6T1
2003 - 8772 P

Abstract: motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications , ­32.36 0.539 159.16 2.55 0.876 143.15 1.971 17.38 0.040 ­32.95 0.541


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PDF MRFG35003MT1/D MRFG35003MT1 8772 P motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor
2006 - RF FET TRANSISTOR 3 GHZ

Abstract: A113 MRFG35003NT1
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 4, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. · Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 , 1.992 18.93 0.040 - 32.36 0.539 159.16 2.55 0.876 143.15 1.971 17.38


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PDF MRFG35003N MRFG35003NT1 RF FET TRANSISTOR 3 GHZ A113 MRFG35003NT1
2006 - Marking Z7 Gate Driver

Abstract: A113 MRFG35003ANT1 MRFG35003NT1 transistor 8772 TC 8644
Text: INFORMATION RF Power Field Effect Transistor Unit Drain - Source Voltage Storage Temperature Range , 0.539 159.16 2.55 0.876 143.15 1.971 17.38 0.040 - 32.95 0.541 158.56


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PDF MRFG35003N MRFG35003NT1 MRFG35003ANT1. MRFG35003NT1 Marking Z7 Gate Driver A113 MRFG35003ANT1 transistor 8772 TC 8644
2006 - Not Available

Abstract: No abstract text available
Text: ARCHIVE INFORMATION RF Power Field Effect Transistor CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC , 0.539 159.16 2.55 0.876 143.15 1.971 17.38 0.040 - 32.95 0.541 158.56


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PDF MRFG35003N MRFG35003NT1 MRFG35003ANT1. MRFG35003NT1
2006 - GT1040

Abstract: 100A101 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1
Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT MRFG35002N6T1 RF Power Field Effect Transistor LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. · Typical Single - Carrier W , 1.47 22.69 0.0361 - 31.7 0.697 146.2 2.65 0.895 143.15 1.46 21.34


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PDF MRFG35002N6 MRFG35002N6T1 GT1040 100A101 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1
2005 - 6821 Freescale

Abstract: transistor 17556 7682 ADC
Text: Freescale Semiconductor Technical Data MRFG35003MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. · Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.84 , 143.15 142.10 140.88 139.83 138.60 137.26 |S21| 8.644 7.924 7.317 6.811 6.380 5.988 5.653 5.310 5.058


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PDF MRFG35003MT1 MRFG35003MT1 6821 Freescale transistor 17556 7682 ADC
2006 - Marking Z7 Gate Driver

Abstract: A113 MRFG35003MT1 MRFG35003NT1
Text: INFORMATION ARCHIVE INFORMATION RF Power Field Effect Transistor °C/W Table 2. Thermal , 0.539 159.16 2.55 0.876 143.15 1.971 17.38 0.040 - 32.95 0.541 158.56


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PDF MRFG35003MT1 MRFG35003NT1. Marking Z7 Gate Driver A113 MRFG35003MT1 MRFG35003NT1
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