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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
BD9V101MUF-LB BD9V101MUF-LB ECAD Model ROHM Semiconductor 16V to 60V, 1A 1ch 2.1MHz Synchronous Buck Converter Integrated FET (Industrial Grade)
BD9G102G-LB BD9G102G-LB ECAD Model ROHM Semiconductor 6V to 42V, 0.5A 1ch Simple Buck Converter Integrated FET (Industrial Grade)
BD9G341AEFJ BD9G341AEFJ ECAD Model ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET
BD9A600MUV BD9A600MUV ECAD Model ROHM Semiconductor 2.7V to 5.5V Input, 6A Integrated MOSFET, Single Synchronous Buck DC/DC Converter
BD9G341AEFJ-LB BD9G341AEFJ-LB ECAD Model ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET (Industrial Grade)
BD9C601EFJ BD9C601EFJ ECAD Model ROHM Semiconductor 4.5V to 18V Input, 6.0A Integrated MOSFET 1ch Synchronous Buck DC/DC Converter

transistor 1201 1203 1205 Datasheets Context Search

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transistor 1201 1203 1205

Abstract: 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282
Text: 1201 1201 1203 1203 1203 1205 1205 1205 1207 1207 1207 1209 1209 ^1211 . cy? ^ 1217 . ^1217 « , Horizontal Deflection High Voltage NPN Fastswitching Transistor . CRT Horizontal Deflection High Voltage NPN Fastswitching Transistor . CRT Horizontal Deflection High Voltage NPN Fastswitching Transistor . CRT Horizontal Deflection High Voltage NPN Fastswitching Transistor


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PDF AVS08 AVS10 110/220V TEA6420J TEA6422 TEA6425 TEA6430 TEA7605 transistor 1201 1203 1205 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282
2010 - TOP265EG

Abstract: top265 RM10 bobbin der246 epcos Rm10 Nippon Chemi-Con RM10 ero 1826 mfr-25fbf rm10 CFR-25JB-3M3
Text: transistor (which is proportional to the CTR of the optocoupler) and into U1's C pin. Current into the C pin , 0.3043 VO (VDC) 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 12.03 05-Feb-10 IO (A) 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 , 12.04 12.05 12.05 12.05 12.05 12.05 12.05 12.05 12.05 12.05 12.05 12.05 12.05 12.05 12.05


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PDF OP265EG DER-246 TOP265EG top265 RM10 bobbin der246 epcos Rm10 Nippon Chemi-Con RM10 ero 1826 mfr-25fbf rm10 CFR-25JB-3M3
TK15120

Abstract: TK15120M
Text: transistor and the muting operation is performed. The capacitor DC voltage is clamped at 1.8 V. 1-200 , approximately 10 mV from 1.8 V. When pin 5 voltage is dropped, the muting transistor base current is decreased , , Inc. 1-201 TK15120 TEST CIRCUIT FOR Z PACKAGE Figure 2. APPLICATION INFORMATION FOR Z , 1 DC potential is raised. This current is the base current for the muting transistor and the muting operation is performed. The capacitor DC voltage is clamped at 1.8 V. TOKO, Inc. 1-203 TK15120


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PDF TK15120 TK15120 TK15120Z TK15120M TK15120M
LM723CM

Abstract: Transistor 1204 LM723 0 to 15 voltage regulator power supply lm723 SCHEMATIC POWER SUPPLY WITH lm723 LM723C LM723CM equivalent power supply lm723 E5E3 TL 187 TRANSISTOR PNP
Text: transistor Output currents in excess of 10A possible by adding external transistors Input voltage 40V max , Refer to RETS723X military specifications for the LM723. 1-201 LM723/LM723C Typical , minimum component count. FIQURE 2. Basic High Voltage Regulator (Vqut = 7 to 37 Volta) 1-203 LM723 , Transistor ) V,N V,N V ?· T VoUT 2N4SM !:r LM723 LM723C r, tL C S INV. | COMP " c i , (External PNP Pass Transistor ) 1-204 LM723/LM723C Typical Applications (Continued) T L /H /8 5


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PDF LM723/LM723C LM723/LM723C LM723C LM723 Tl/H/8563-18 TL/H/8563-1B LM723CM Transistor 1204 LM723 0 to 15 voltage regulator power supply SCHEMATIC POWER SUPPLY WITH lm723 LM723CM equivalent power supply lm723 E5E3 TL 187 TRANSISTOR PNP
TK15120M

Abstract: TK15120 transistor 1201 1203 1205 K1512
Text: is the base current for the muting transistor and the muting operation is performed. The capacitor DC , dropped, the muting transistor base current is decreased, and the status Is changed to "muting off." (10 , the "mute on" status. TOKO, Inc. 1-201 T D b7b3 2 GQD3230 3bfi TK15120 TEST CIRCUIT FOR , the muting transistor and the muting operation is performed. The capacitor DC voltage is clamped at 1.8 V. TOKO, Inc. 1-203 0fci7b32 D0G3232 13D TK15120 APPLICATION INFORMATION FOR Z


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PDF TK15120 TK15120 TK15120Z TK15120M TK15120TPC TK15120TPC10 GDD3234 TK15120TP TK15120M transistor 1201 1203 1205 K1512
1999 - 2SC5004

Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA804TC NPN SILICON EPITAXIAL TRANSISTOR (WITH , ­173.3 171.0 156.8 143.8 131.3 120.1 108.8 98.5 88.0 78.1 68.6 59.3 50.0 41.3 32.0 23.2 , 1.601 1.542 1.482 1.431 1.382 1.330 1.283 1.250 1.205 148.2 124.0 104.7 88.2 74.3 61.8 , ­99.0 ­106.4 ­112.9 ­ 120.3 ­128.0 ­135.5 ­143.0 ­151.0 ­158.4 ­166.7 ­174.8 177.3 168.3 , ­114.8 ­ 120.5 ­124.9 0.940 0.806 0.687 0.598 0.536 0.485 0.450 0.425 0.406 0.389 0.374


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PDF PA804TC 2SC5004) PA804TC PA804TC-T1 2SC5004
1996 - marking code R2s

Abstract: transistor 1201 1203 1205 MAX836 MAX836EUS-T MAX837 MAX837EUS-T marking R2s SOT143
Text: . TEMPERATURE 1.205 1.204 1.203 MAX836/7 03 14 4.0 SUPPLY CURRENT (µA) 1.206 16 MAX836 , 1.0 1.202 VCC = 3.6V 2 1.201 -60 -40 VIN = 1.22V 0 -20 0 20 40 60 80 , 1.204 _Chip Information TRANSISTOR COUNT: 54 Heater Temperature Control , TRANSISTOR PACKAGE B1 e Maxim cannot assume responsibility for use of any circuitry other than


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PDF OT143 MAX836) MAX837) MAX836EUS-T OT143 MAX837EUS-T 1-0052A marking code R2s transistor 1201 1203 1205 MAX836 MAX836EUS-T MAX837 MAX837EUS-T marking R2s SOT143
NEC k 2134 transistor

Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE , 15.71 15.59 15.26 15.65 15.45 14.73 14.20 13.35 13.24 13.15 12.93 12.77 12.66 12.41 12.29 12.05 11.91 , -93.6 -103.1 -112.8 - 120.3 -128.3 -136.0 -143.3 -150.5 -159.3 -169.2 179.6 164.4 7 NEC , -58.0 -70.5 -82.0 -92.5 -102.3 -112.3 - 120.1 -128.4 -136.6 -144.6 -152.5 -162.0 -172.9 173.7 155.7 , transistor with shottky barrier gate. Caution The Great Care must be taken in dealing with the devices in


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PDF NE32584C NE32584C NE32584C-T1A NE32584C-SL NE32584C-T1 NEC k 2134 transistor k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
1996 - transistor 1201 1203 1205

Abstract: MAX836 MAX836EUS-T MAX837 MAX837EUS-T marking R2s SOT143 aaeq
Text: . TEMPERATURE 1.205 1.204 1.203 MAX836/7 03 14 4.0 SUPPLY CURRENT (µA) 1.206 16 MAX836 , 1.0 1.202 VCC = 3.6V 2 1.201 -60 -40 VIN = 1.22V 0 -20 0 20 40 60 80 , 1.204 _Chip Information TRANSISTOR COUNT: 54 Heater Temperature Control , TRANSISTOR PACKAGE B1 e Maxim cannot assume responsibility for use of any circuitry other than


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PDF OT143 MAX836) MAX837) MAX836EUS-T OT143 MAX837EUS-T 1-0052A transistor 1201 1203 1205 MAX836 MAX836EUS-T MAX837 MAX837EUS-T marking R2s SOT143 aaeq
Philips FA 261

Abstract: No abstract text available
Text: IS C R E TE Product specification b?E D NPN 9 GHz wideband transistor FEATURES , transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers , Semiconductors N AUER P H I L IPS/DISCRETE NPN 9 GHz wideband transistor Product specification b7E Â , - N AMER PHILIPS/DISCRETE b7E D - NPN 9 GHz wideband transistor BFS505 , /DISCRETE b?E J>- NPN 9 GHz wideband transistor BFS505 URC01S lc (m A) V qe = 6


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PDF BFS505 OT323 MBC87I0 OT323. OT323 Philips FA 261
MAX8374

Abstract: marking R2s SOT143 aaeq
Text: P E R A T U R E 1.207 SU P P LY C UR RENT vs. SU P P LY VOLTAGE £ < O o 1.206 1.205 1.204 1.203 » - ù _ cc 1.202 1.201 60 -40 -20 0 20 40 B0 TEMPERATURE ( Ç) I Vc c (V , ) ^ _ Ch i p I n f o r m a t i o n TRANSISTOR COUNT: 54 H eater Tem perature , 4 3 SM A L L - O U T L I N E TRANSISTOR PACKAGE M axim cannot assume responsibility for use o f


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PDF OT143 MAX836 MAX837 MAX836) AX837) MAX836/MAX837 MAX8374 marking R2s SOT143 aaeq
20 qfn 3x3

Abstract: sot23-5 marking bbb PAM2305CGFADJ MARKING yw SOT23 PAM2305 sot23-5 code "BBB" MARKING CODE A25 sot23-5 sot-23 BEV PAM2305AAB250 PAM2305AAB280
Text: Voltage VS Load Current 1.205 0.604 Vo=1.2V 1.203 0.6 Output Voltage(V) 1.201 Vfb , 1.185 I=600mA Vo=1.2V 1.180 I=100mA 0.586 1.205 Vin=3.6V I=800mA 0.584 , (Over Temperature Protection) starts the thermal shutdown and turns the pass transistor off. The pass transistor resumes operation after the junction temperature drops below 120°C. 1 2 For continuous , transistor continuously on. In this mode the output voltage is equal to the input voltage minus the voltage


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PDF PAM2305 PAM2305 OT23-5 50BSC 20 qfn 3x3 sot23-5 marking bbb PAM2305CGFADJ MARKING yw SOT23 sot23-5 code "BBB" MARKING CODE A25 sot23-5 sot-23 BEV PAM2305AAB250 PAM2305AAB280
2004 - sot-143 eqaa

Abstract: eqaa transistor 1201 1203 1205 MAX836 MAX836EUS-T MAX837 MAX837EUS-T eraa
Text: . TEMPERATURE 1.205 1.204 1.203 MAX836/7 03 14 4.0 SUPPLY CURRENT (µA) SUPPLY CURRENT (µA , 1.202 VCC = 3.6V 2 1.201 -60 -40 VIN = 1.22V 0 -20 0 20 40 60 80 100 2 , - 1 1.204 Chip Information TRANSISTOR COUNT: 54 Heater Temperature Control Figure 4 shows


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PDF MAX836/MAX837 OT143 MAX836 MAX837 MAX836) MAX837) MAX836EUS-T -40his OT-143 sot-143 eqaa eqaa transistor 1201 1203 1205 MAX836EUS-T MAX837 MAX837EUS-T eraa
A642 transistor pnp

Abstract: a603 transistor A608 transistor pnp transistor A608 A608 N A608 A1480 A642 transistor to 92 A641 NPN transistor A641 transistor
Text: -2)10nAmax:Yfs 1/2 I.Omax. 91 92 93 FM 1201 * FM 1202* FM 1203 * 6 6 fi N0 N0 N0 s fi L74 L74 L74 Pd 500mW , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , I.Omax. 94 95 96 FM 1204* FM 1205 * FM 1206* 6 6 fi N0 N0 N0 s L74 L74 L74 Pd 500mW;IDSS 1/2 1.0max;VGS


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PDF diff103 FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V A642 transistor pnp a603 transistor A608 transistor pnp transistor A608 A608 N A608 A1480 A642 transistor to 92 A641 NPN transistor A641 transistor
2008 - MAX837EUS-T

Abstract: eqaa MAX836 eraa 1204 transistor MAX836EUS-T MAX837 8 pin SO 1204
Text: . TEMPERATURE 1.206 14 1.204 1.203 SUPPLY CURRENT (A) 4.0 1.205 3.0 2.0 12 10 , . SUPPLY VOLTAGE 1.207 VCC = 3.6V 2 VIN = 1.22V 0 1.201 -60 -40 -20 0 20 40 , -Pin Micropower Voltage Monitors Package Information Chip Information TRANSISTOR COUNT: 54 For the latest


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PDF MAX836/MAX837 OT143 MAX836 MAX837 MAX836) MAX837) MAX836/MAX837 MAX837EUS-T eqaa eraa 1204 transistor MAX836EUS-T MAX837 8 pin SO 1204
2005 - eqaa

Abstract: sot-143 eqaa SOT143-4 MAX836 MAX836EUS-T MAX837 MAX837EUS-T transistor 1201 1203 1205 THERMISTOR
Text: . TEMPERATURE 1.205 1.204 1.203 MAX836/7 03 14 4.0 SUPPLY CURRENT (µA) SUPPLY CURRENT (µA , 1.202 VCC = 3.6V 2 VIN = 1.22V 0 1.201 -60 -40 -20 0 20 40 60 80 100 2 , - 1 1.204 Chip Information TRANSISTOR COUNT: 54 Heater Temperature Control Figure 4


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PDF MAX836/MAX837 OT143 MAX836 MAX837 MAX836) MAX837) OT-143 MAX836/MAX837 OT-143, eqaa sot-143 eqaa SOT143-4 MAX836EUS-T MAX837 MAX837EUS-T transistor 1201 1203 1205 THERMISTOR
Package Marking EA SOT23-5

Abstract: Marking AE sot23-5 PAM2301caabadj sot23-5 ea product code PAM2301CAAB180 L47 sot23 marking code 604 SOT23 Marking AE sot235 PAM2301CAAB330 Nch -50V 10MA SOT23-5
Text: ( Tem perature( Output Voltage VS Output Current Reference Voltage VS Load Current 1.205 0.604 Vo=1.2V 1.203 0.6 Output Voltage(V) 1.201 Vfb 0.596 0.592 0.588 1.199 1.197 , 1.205 0.610 0.605 0.600 1.192 1.191 Vo=1.2V 1.19 Vin=3.6V 0.595 1.189 0.590 , turns the P-chan nel transistor continuously on. In this mode the output voltage is equal to the input voltage minus the voltage drop across the P - channel transistor : When laying out the printed circuit


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PDF PAM2301 800mA PAM2301 800mA OT23/Tape PAM2301CAAB120 OT23-5 000Units/Tape PAM2301CAABADJ OT-23-5 Package Marking EA SOT23-5 Marking AE sot23-5 PAM2301caabadj sot23-5 ea product code PAM2301CAAB180 L47 sot23 marking code 604 SOT23 Marking AE sot235 PAM2301CAAB330 Nch -50V 10MA SOT23-5
hard drive motor circuit

Abstract: TDA5142T operational transconductance amplifier
Text: circuitry • Six outputs that can drive three external transistor pairs: - output current 0.2 A (typ.) - , extra sensor • Transconductance amplifier for an external control transistor • Motor brake , A; lower transistor - - 0.35 V lo = 100 m A; upper transistor 1.05 - - V 'lim current limiting , 1201 711002b 007^523 444 This Material Copyrighted By Its Respective Manufacturer Philips , June 1994 ■711002b 007^525 217 1203 This Material Copyrighted By Its Respective Manufacturer


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PDF TDA5142T TDA5142T 711Gfi5b hard drive motor circuit operational transconductance amplifier
Not Available

Abstract: No abstract text available
Text: circuitry · Six outputs that can drive three external transistor pairs: output current 0.2 A (typ.) low , Tacho output without extra sensor · Transconductance amplifier for an external control transistor · , current limiting note 1 CONDITIONS 4 3 lo = 100 mA; lower transistor lo = 100 mA; upper transistor - , BLO C K DIAGRAM AMP OUT VMOT Fig.1 Block diagram. June 1994 1201 Philips , handling °c °c w V - 500 June 1994 1203 Philips Semiconductors Integrated Circuits


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PDF TDA5142T TDA5142T
1s211

Abstract: 2I k
Text: SIEMENS NPN Silicon RF Transistor · For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA · fT = 8 GHz F = 1.2 dB at 900 MHz BFP 183R ESP: Electrostatic discharge , lead at the soldering point to the pcb. Semiconductor Group 1203 01.97 SIEMENS Electrical , - Semiconductor Group 1205 01.97 SIEMENS SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR =


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PDF Q62702-F1594 OT-143R 900MHz 1S211 2I k
962-20

Abstract: 2SC5004
Text: . DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA804TC NPN SILICON EPITAXIAL TRANSISTOR (WITH , ­173.3 171.0 156.8 143.8 131.3 120.1 108.8 98.5 88.0 78.1 68.6 59.3 50.0 41.3 32.0 23.2 , 1.601 1.542 1.482 1.431 1.382 1.330 1.283 1.250 1.205 148.2 124.0 104.7 88.2 74.3 61.8 , ­99.0 ­106.4 ­112.9 ­ 120.3 ­128.0 ­135.5 ­143.0 ­151.0 ­158.4 ­166.7 ­174.8 177.3 168.3 , ­114.8 ­ 120.5 ­124.9 0.940 0.806 0.687 0.598 0.536 0.485 0.450 0.425 0.406 0.389 0.374


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PDF
RN1202

Abstract: ku 611 1204 transistor Transistor Bo 47 rn1206 Transistor 1204
Text: TOSHIBA TOSHIBA TRANSISTOR RN1201-RN1206 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN1201, RN1202, RN1203, RN1204, RN1205, RN1206 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. · · · · With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and , hFE - IC COLLECTOR CURRENT Iç (mA) COLLECTOR CURRENT 1q (mA) RN 1203 hFE - Ic RN1204 hFE - IC RN 1205 hFE - IC RN1206 hpE - IC COLLECTOR CURRENT Ic (mA) 1997


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PDF RN1201-RN1206 RN1201, RN1202, RN1203, RN1204, RN1205, RN1206 RN2201 RN1201 RN1202 ku 611 1204 transistor Transistor Bo 47 rn1206 Transistor 1204
2013 - Enpirion Product Marking Specification

Abstract: application note pll 4046 pwm
Text: Current 1.205 1.805 1.204 VIN = 8V 1.203 VIN = 10V 1.202 VIN = 12V OUTPUT , 1.2V 1.203 1.202 1.201 1.200 LOAD = 0A 1.199 LOAD = 4A 1.198 LOAD = 8A 1.197 , 1.2V 1.203 1.201 1.200 LOAD = 0A 1.199 LOAD = 4A 1.198 CONDITIONS VIN = 12V VOUT_NOM = 1.2V 1.203 1.202 1.201 1.200 LOAD = 0A 1.199 LOAD = 4A 1.198 LOAD = 8A , open drain transistor (pulled up to AVIN or similar voltage) used for power system state indication


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PDF EN23F0QI 12x13x3mm EN23F0QI Enpirion Product Marking Specification application note pll 4046 pwm
A642 transistor pnp

Abstract: D1302 transistor D1303 d1302 transistor A641 NPN transistor FT57 D1103 D1303 FM1111 A642 transistor to 92
Text: 1200* FM 1201 * FM 1202* 500m 500m 500m 2.0t 2.0t 2.0t 15 15 15 35 35 35 35 A 35A 35A 100u 100u lOOu , # 8.0p# 8.0d# 2.8m 2.8m 2.8m 200J 200J 200J #0 #0 #0 L74 L74 L74 82 83 84 FM1203* FM1204* FM 1205 * 500m , ° C 0 - 60°C A ~ Pulsed t - Tetrode NPN or "N" Channel PNP or "P" Channel Field Effect Transistor , max. Pd 500mW;IDSS 1/2 1.0max;VGSI1-2)2.0mVmax:IGn-2)10nAmax:Yfs 1/2 I.Omax. 91 92 93 FM 1201 * FM 1202* FM 1203 * 6 6 fi N0 N0 N0 s fi L74 L74 L74 Pd 500mW;IDSS 1/2 1.0max;VGS(1-2)5.0mVmax;IG(1-2


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PDF NPN110. FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V A642 transistor pnp D1302 transistor D1303 d1302 transistor A641 NPN transistor FT57 D1103 D1303 FM1111 A642 transistor to 92
2013 - Not Available

Abstract: No abstract text available
Text: 0.998 0.997 1.204 VIN = 8V 1.203 VIN = 10V 1.202 VIN = 12V 1.201 1.200 1.199 , = 4A 1.198 LOAD = 6A 1.197 CONDITIONS VIN = 12V VOUT_NOM = 1.2V 1.203 1.202 1.201 , CONDITIONS VIN = 8V VOUT_NOM = 1.2V 1.203 1.202 1.201 1.200 LOAD = 0A 1.199 LOAD = 1A LOAD , this pin. Leave this pin floating if not used. Power OK is an open drain transistor (pulled up to , Current 1.005 1.205 1.004 VIN = 8V 1.003 VIN = 10V 1.002 VIN = 12V OUTPUT


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PDF EN2390QI 11x10x3mm
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