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Part Manufacturer Description Datasheet Download Buy Part
LT1127ACN Linear Technology LT1127 - Quad Decompensated Low Noise, High Speed Precision Op Amps; Package: PDIP; Pins: 14; Temperature Range: 0°C to 70°C
LT1127AMN14 Linear Technology IC QUAD OP-AMP, PDIP14, 0.300 INCH, PLASTIC, DIP-14, Operational Amplifier
LT1127MJ14 Linear Technology IC QUAD OP-AMP, 140 uV OFFSET-MAX, 45 MHz BAND WIDTH, CDIP14, Operational Amplifier
LT1127ACN#PBF Linear Technology LT1127 - Quad Decompensated Low Noise, High Speed Precision Op Amps; Package: PDIP; Pins: 14; Temperature Range: 0°C to 70°C
LT1127AMN Linear Technology IC QUAD OP-AMP, PDIP, 0.300 INCH, PLASTIC, DIP, Operational Amplifier
LT1127MJ/883B Linear Technology IC QUAD OP-AMP, 290 uV OFFSET-MAX, 65 MHz BAND WIDTH, CDIP14, CERDIP-14, Operational Amplifier

transistor 1127 Datasheets Context Search

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transistor 1127

Abstract:
Text: others. # Tne information contained herein is subject to change without notice. 1997 11-27 1/6 - , . Connected to the base of an external PNP transistor so that the output voltage is stabilized. Power supply , 5mA, an output current of 300mA is assured if the external transistor has an hp^ of 60 or more. Phase , output voltage V r e g can also be detected at this pin. Grounded NPN transistor open-col lector output , . NPN transistor open-col lector output. (1)The signal goes low when the output voltage drops below 92


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PDF TA8007S TA8007S transistor 1127
transistor 1127

Abstract:
Text: change w itho ut notice. 0 # # 1997 11-27 1/6 - T O SH IB A TA8007AS PIN DESCRIPTION PIN , overvoltage detection circuit and the 5V power supply. Connected to the base of an external PNP transistor so , the external transistor has an hp^ of 60 or more. Phase compensation pin for output stabilization , detected at this pin. Grounded NPN transistor open-col lector output This signal is low while pulses come , used for monitoring the operation of the microcomputer system. NPN transistor open-col lector output


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PDF TA8007AS TA8007A5 transistor 1127
Not Available

Abstract:
Text: ch a n g e w ith o u t notice. 1997 11-27 1/6 - TO SHIBA TA8007S PIN DESCRIPTION PIN No , overvoltage detection circuit and the 5V pow er supply. Connected to the base of an external PNP transistor , assured if the external transistor has an hpE of 60 or more. Phase com pensation pin for output , also be detected at this pin. Grounded NPN transistor open-collector output This signal is low w , . This function can be used for m onitoring the operation o f the m icrocomputer system. NPN transistor


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PDF TA8007S TA8007S 1500X
Not Available

Abstract:
Text: ch a n g e w ith o u t notice. 1997 11-27 1/6 - TO SHIBA TA8007AS PIN DESCRIPTION PIN , transistor so that the output voltage is stabilized. Power supply design suitable for particular load , assured if the external transistor has an hpE of 60 or more. Phase com pensation pin for output , also be detected at this pin. Grounded NPN transistor open-collector output This signal is low w , . This function can be used for m onitoring the operation o f the m icrocomputer system. NPN transistor


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PDF TA8007AS TA8007AS 1500X
Not Available

Abstract:
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR 2SJ512 SILICON P CHANNEL MOS TYPE ( tt-M O SV ) i , , Rg = 250, IA r = -5 A This transistor is an electrostatic sensitive device. Please handle with , contained herein is subject to change without notice. 1997 11-27 1/5 - TOSHIBA 2SJ512 , (Starting from Alphabet A) -Year (Last Number of the Christian Era) Eh 1997 11-27 2/5 - TOSHIBA , ) - id £ ~ OS hS äg » DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 1997 11-27 3/5 -


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PDF 2SJ512
2SK2996

Abstract:
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-M O SV ) 2SK2996 , , RG = 25n, IAR=10A This transistor is an electrostatic sensitive device. Please handle with caution , contained herein is subject to change without notice. 1997 11-27 1/5 - TOSHIBA 2SK2996 , A) T1 " -Year (Last Number of the Christian Era) 1997 11-27 2/5 - TOSHIBA , 11-27 3/5 - TOSHIBA 2SK2996 Rds (ON) - Te Id r - Vd s SG B i X£ ° o W Q' t í -8 0


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PDF 2SK2996 20kil) --10A, 2SK2996 transistor 1127
transistor 1127

Abstract:
Text: TOSHIBA TPC8301 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2- tt-M O SVI , the two devices driving) This transistor is an electrostatic sensitive device. Please handle with , ithout notice. 961001EAA1 1997 11-27 1/5 - TOSHIBA TPC8301 ELECTRICAL CHARACTERISTICS , Number of the Christian Era) u- 1997 11-27 2/5 - TOSHIBA TPC8301 ID - VDS id - , .3 -1 -3 -1 0 -30 DRAIN-SOURCE VOLTAGE V ßg (V) 1997 11-27 3/5 - TOSHIBA


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PDF TPC8301 --30V) transistor 1127
2SK2961

Abstract:
Text: T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR 2SK2961 SILICON N CHANNEL MOS TYPE (L2- tt-M O SV , This transistor is an electrostatic sensitive device. P lease handle with caution. 961001EAA1 , !fisr3b i!ity to physics! strsss 1997 11-27 - 1/5 T O SH IB A 2SK2961 ELECTRICAL , Month (Starting from Alphabet A) Year (Last Num ber of the C hristian Era) 1997 11-27 - 2/5 , 1 ID 3 (A) 10 GATE-SOURCE VOLTAGE V<}g (V) DRAIN CURRENT 1997 11-27 - 3/5


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PDF 2SK2961 100//A 20kfi) 2SK2961 transistor 1127
Not Available

Abstract:
Text: TOSHIBA TPC8301 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P C HANN EL MOS TYPE (L2- tt-M O , transistor is an electrostatic sensitive device. Please handle with caution. 9 6 1001EAA1 ©TOSHIBA is , subject to change w ith o u t notice. 1997 11-27 1/5 - TOSHIBA TPC8301 ELECTRICAL , Number of the Christian Era) 1997 11-27 2/5 - TOSHIBA TPC8301 id - id vds - vds , DRAIN-SOURCE VOLTAGE Vd s (V) -3 0 1997 11-27 3/5 - TOSHIBA TPC8301 Rd s (o n ) - Te iD R -


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PDF TPC8301 20kfi)
transistor 1127

Abstract:
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR 2SK2961 SILICON N CHANNEL MOS TYPE (L2 -tt-M O SV , Ambient SYMBOL MAX. UNIT Rth (ch-a) 138 °c/w This transistor is an electrostatic sensitive device , information contained herein is subject to change without notice. 1997 11-27 1/5 - TOSHIBA 2SK2961 , (Starting from Alphabet A) '-Year (Last Number of the Christian Era) 1997 11-27 2/5 - TOSHIBA , 0.3 0.5 1 3 DRAIN CURRENT I q (A) 10 1997 11-27 3/5 - TOSHIBA 2SK2961 Rd s (o n ) - Te


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PDF 2SK2961 100//A 75MAX. 20kil) 100/is^ transistor 1127 transistor 2sk2961
2SK2996

Abstract:
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-M O SV ) 2SK2996 , subject to change without notice. This transistor is an electrostatic sensitive device. Please handle with caution. 1 - 1 -a J 1.1 1997 11-27 - 3.9 3.0 ) 1/5 TOSHIBA 2SK2996 , (Starting from Alphabet A) -Year (Last Number of the Christian Era) I 1997 11-27 - 2/5 , o tó £ g g < o 40 80 120 160 CASE TEMPERATURE Tc (°C) 200 1997 11-27 - 4/5 TOSHIBA


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PDF 2SK2996 100//A 2SK2996 2SK2996(Q)
Not Available

Abstract:
Text: T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR TPC8301 SILICON P CHANNEL MOS TYPE (L2- tt-MOSVI , . 1997 11-27 - 1/5 T O SH IB A TPC8301 ELECTRICAL CHARACTERISTICS (Ta = 25 , (Last Num ber of the C hristian Era) uuuu 1997 11-27 - 2/5 TO SH IB A TPC8301 id , DRAIN-SOURCE VOLTAGE 1997 11-27 - 3/5 TO SH IB A TPC8301 Rd s (o n ) - Te IDR - VDS CASE , ) 20 TOTAL GATE CHARGE 1997 11-27 - 4/5 TO SH IB A TPC8301 rth - PULSE WIDTH


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PDF TPC8301
MCp*3041

Abstract:
Text: 0 k V //*s ijfe O* ÉH sjoo HCPL-4502 6N1361 HCPL-2503 6N135 LED LED LED LED Transistor Transistor Transistor Transistor to 30 V to 15 V to 30 V to 15 V 14% @ 8 mA 17% @ 16 mA 15% @ 16 mA 9% @ 16 mA 5% @ , -2531 HCPL-2530 Dual LED Dual LED Dual Transistor Dual Transistor to 30 V 15% @ 16 mA 1 M bit , j]#>l ]% 4 * w 8]% I ji^ r v j 1 19) sJgho HCPL-2530 HCPL-2531 Transistor Transistor to 30 , kbit/s C T R » , = 100, 5 m A /5 V CTR c£(mjn)-50, 5 m A /5 V Low Cost Low Cost Transistor 30 V


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PDF 740L6000 740L6001 740L6010 MCA2255Z MCA255 MCA2230Z MCA230 MID400 H11AA1 H11AA2 MCp*3041 MCP3031 MCA2231Z MCP3040 H11AA1 equivalent MCP3041 740L6000 C1343 740L6000 equivalent CNX35 equivalent
MOS FET 1127

Abstract:
Text: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-P CHANNEL MOS TYPE HN1L03FU HN1I HIGH , contained herein is subject to change without notice. 1997 11-27 - 1/6 TOSHIBA HN1L03FU Q1 , JUS - - - - ton toff - /u s 1997 11-27 - 2/6 TOSHIBA HN1L03FU Q l , ) GATE-SOURCE VOLTAGE Vq s (V) 1997 11-27 - 3/6 TOSHIBA DRAIN-SOUR,CE ON VOLTAGE v DS(ON , Id - Vgs DRAIN-SOURCE VOLTAGE V ßS (V) GATE-SOURCE VOLTAGE V ßS (V) 1997 11-27


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PDF HN1L03FU 1HilYJ-01IV MOS FET 1127
toshiba ta 1222

Abstract:
Text: T O SH IB A RN 1221, RN 1222, RN 1223, RN 1224, RN 122 5, RN 1226, RN 1227 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN1221, RN1222, RN1223, RN1224 RN1225, RN1226, RN1227 SW , change w ith o u t notice. 1997 11-27 1/7 - T O SH IB A RN 1221, RN 1222, RN 1223, RN 1224, RN , - 1997 11-27 2/7 - T O SH IB A RN 1221, RN 1222, RN 1223, RN 1224, RN 122 5, RN 1226, RN , 2.86 0,9 1,0 1,1 0.0423 0.047 0.0517 0.09 0.1 0.11 0.2 0.22 0.24 k n 1997 11-27 3/7 -


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PDF RN1221, RN1222, RN1223, RN1224 RN1225, RN1226, RN1227 800mA) RN2221--2227 55MAX. toshiba ta 1222 TRANSISTOR 1221 RN1223
Not Available

Abstract:
Text: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3327 i <;r 3 3 i 7 M r w M r m FOR MUTING AND SWITCHING APPLICATIONS U nit in mm 4.2M AX. · · · · High Emitter-Base Voltage , in the TOSHIBA Sem iconductor Reliability Handbook. 1997 11-27 - 1/3 TOSHIBA 2SC3327 , w itho ut notice. 1997 11-27 - 2/3 TOSHIBA 2SC3327 Cob - VCB 30 f= 1MHz < H 0 , R E Ta (°C) 1997 11-27 - 3/3


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PDF 2SC3327 55MAX.
2003 - Not Available

Abstract:
Text: LVCMOS / LVTTL-TODIFFERENTIAL HSTL TRANSLATOR 4.6V -0.5V to VDD + 0.5 V -0.5V to VDDO + 0.5V 112.7 °C/W , , JEDEC Standard Test Boards Multi-Layer PCB, JEDEC Standard Test Boards 153.3°C/W 112.7 °C/W 200 128.5 , Boards Multi-Layer PCB, JEDEC Standard Test Boards 153.3°C/W 112.7 °C/W 200 128.5°C/W 103.3°C/W 500 , pertains to most designs. TRANSISTOR COUNT The transistor count for ICS85222-01 is: 443 85222AM-01


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PDF ICS85222-01 350MHz ICS85222-01 ICS8522) 85222AM-01
Not Available

Abstract:
Text: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3267 POWER AMPLIFIER APPLICATIONS POWER SWICHING APPLICATIONS 2SC3267 Û.2MAX. Unit in mm · · Low Saturation Voltage : V q E (sat)~ 0.5V (Max.) @Iq = 2A Complementary to 2SA1297 0.55MAX. MAXIMUM RATINGS (Ta = 25 , and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997 11-27 1/2 - , information contained herein is subject to change without notice. 1997 11-27 2/2 -


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PDF 2SC3267 2SA1297 55MAX. 961001EAA2'
2010 - ICS85222-01

Abstract:
Text: Impedance, JA 112.7 °C/W (0 lfpm) Storage Temperature, TSTG -65°C to 150°C NOTE: Stresses beyond , -PIN SOIC, FORCED CONVECTION JA by Velocity (Linear Feet per Minute) 0 200 500 153.3°C/W 112.7 , Boards Multi-Layer PCB, JEDEC Standard Test Boards 200 500 153.3°C/W 112.7 °C/W 128.5°C/W , the second row pertains to most designs. TRANSISTOR COUNT The transistor count for ICS85222-01 is


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PDF ICS85222-01 ICS85222-01 350MHz 375ps 1075ps 85222AM-01
2006 - circuit diagram of 32-1 multiplexer

Abstract:
Text: to 150°C Package Thermal Impedance, JA 101.7°C/W (0 m/s) TSSOP (Junction-to-Ambient) 112.7 °C/W , value is 112.7 °C/W per Table 6B below. Therefore, Tj for an ambient temperature of 85°C with all outputs switching is: 85°C + 0.146W * 112.7 °C/W = 101.52°C. This is below the limit of 125°C. This , °C/W 112.7 °C/W 128.5°C/W 103.3°C/W 115.5°C/W 97.1°C/W NOTE: Most modern PCB designs use , Test Boards Multi-Layer PCB, JEDEC Standard Test Boards 200 500 153.3°C/W 112.7 °C/W 128.5


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PDF ICS853052 ICS853052 199707558G circuit diagram of 32-1 multiplexer ICS853052AG ICS853052AGLF ICS853052AGT marking 52AL MC100EP58 MO-187
2003 - ICS85222

Abstract:
Text: Impedance, JA 112.7 °C/W (0 lfpm) Storage Temperature, TSTG -65°C to 150°C NOTE: Stresses beyond , (Linear Feet per Minute) 0 200 500 153.3°C/W 112.7 °C/W Single-Layer PCB, JEDEC Standard Test , Velocity (Linear Feet per Minute) 0 200 500 153.3°C/W 112.7 °C/W Single-Layer PCB, JEDEC , to most designs. TRANSISTOR COUNT The transistor count for ICS85222-01 is: 443 85222AM-01


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PDF ICS85222-01 ICS85222-01 85222AM-01 ICS85222
Not Available

Abstract:
Text: TOSHIBA 2SC3267 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3267 Unit in mm POWER SWICHING APPLICATIONS 4 .2 M A X. • • Low Saturation Voltage : V q e (sat) = 0-5V (Max.) @Iq = 2A Complementary to 2SA1297 MAXIMUM , ico n d u cto r R e liab ility H andbo ok. 1997 11-27 - 1/2 TOSHIBA 2SC3267 IC - VCE , in fo rm a tio n co n ta in e d herein is subject to ch an g e w ith o u t notice. 1997 11-27 2/2


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PDF 2SC3267 2SA1297 961001EAA2'
2004 - 853L022AMLFT

Abstract:
Text: , TSTG -65°C to 150°C Package Thermal Impedance, JA 101.7°C/W (0 m/s) TSSOP 112.7 °C/W (0 lfpm , Test Boards 112.7 °C/W 103.3°C/W 97.1°C/W NOTE: Most modern PCB designs use multi-layered boards , 500 153.3°C/W 112.7 °C/W Single-Layer PCB, JEDEC Standard Test Boards Multi-Layer PCB, JEDEC , multi-layered boards. The data in the second row pertains to most designs. TRANSISTOR COUNT The transistor


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PDF ICS853L022 ICS853L022 350MHz 853L022AG 853L022AMLFT MC100LVELT22 MO-187
Not Available

Abstract:
Text: TOSHIBA 2SC3279 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3279 STOROBO FLASH APPLICATIONS M EDIUM PO W ER AM PLIFIER APPLICATIONS U nit in mm . 5.1 M AX. • High DC Current Gain and Excellent hjpE Linearity : hE E (i) = 140—600 (V c e = 1V, Ic = 0.5A) : hF , precautions and conditions set forth in the TOSH IBA Sem iconductor Reliability Handbook. 1997 11-27 - , to change w ith o u t notice. 1997 11-27 2/2 -


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PDF 2SC3279 961001EAA2'
2003 - ICS85222-02

Abstract:
Text: Outputs, IO Continuous Current Surge Current 50mA 100mA Package Thermal Impedance, JA 112.7 , ) 0 200 500 153.3°C/W 112.7 °C/W Single-Layer PCB, JEDEC Standard Test Boards Multi-Layer , Test Boards Multi-Layer PCB, JEDEC Standard Test Boards 200 500 153.3°C/W 112.7 °C/W 128.5 , data in the second row pertains to most designs. TRANSISTOR COUNT The transistor count for ICS85222


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PDF ICS85222-02 ICS85222-02 85222AM-02 ICS85222AM-02 ICS85222AM-02LF ICS85222AM-02T
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