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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

transistor 107A equivalent Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
4000w pfc circuit

Abstract: 1402C transistor pfc 3000w transistor 1402c 3kw pfc 3000w pfc 4000w pfc transistor 107A equivalent 3000W transistor ac to dc 3000w power supply
Text: Single Phase 24V 125A M3000-26-4 3000W Single Phase 28V 107A M3000-26-5 3000W , Three Phase 24V 125A M3000-86-4 3000W Three Phase 28V 107A M3000-86-5 3000W , connector is Molex 39-30-1140 or equivalent . Mating connector is Molex 39-01-2140 or equivalent . D J-2 signal connector is Molex 39-01-1120 or equivalent . Mating connector is 39-01-2120 or equivalent . E Signal connector contacts are Molex 39-00-0039 or equivalent . F Auxiliary DC output(s) are 6 position


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PDF M3000 M4000 M3000/M4000 VDE0805/EN60950/IEC950 R9373263 UL1950 E135734 1402C 4000w pfc circuit 1402C transistor pfc 3000w transistor 1402c 3kw pfc 3000w pfc 4000w pfc transistor 107A equivalent 3000W transistor ac to dc 3000w power supply
transistor 107A equivalent

Abstract: ac to dc 3000w power supply
Text: Notes 1 2 3 O UTPUT C U R R EN T 600A 600A 600A 250A 200A 125A 107A 63A 600A 600A 600A 250A 200A 125A 107A 63A 800A 800A M O D EL N U M B E R I3 I M3000-26-0 M3000-26-9 M3000-26-1 M3000-26-2 M3000 , mating to 5/16 terminal lugs. C J-1 signal connector is Molex 39-30-1140 or equivalent . Mating connector is Molex 39-01-2140 or squivalent. D J-2 signal connector is Molex 39-01-1120 or equivalent . Mating connector is 39-01-2120 or equivalent . E Signal connector contacts are Molex 39-00-0039 or equivalent . F


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PDF M3000 M4000 Typi75 000-4000W VDE0805/EN60950/IEC950 UL1950 E135734 R9373263 1402C transistor 107A equivalent ac to dc 3000w power supply
thermistor 103AT-2

Abstract: thermistor 103AT 103AT-2 transistor 107A equivalent DS2715KSWITCH nimh charge controller DS2715 DS2715KLINEAR
Text: -cell NiMH stack between the B- and B+ pads observing proper polarity. Connect a recommend or equivalent , exceed the power rating of the regulating transistor on the linear board. Maxim recommends using a 6V , of ~ 1.07A for the switch mode kit. CHARGE TIME AND TOP-OFF TIME ADJUSTMENT Charge time and


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PDF DS2715 R/1000 DS2715K DS2715KLINEAR+ DS2715KSWITCH+ thermistor 103AT-2 thermistor 103AT 103AT-2 transistor 107A equivalent DS2715KSWITCH nimh charge controller DS2715KLINEAR
2010 - 2N6901

Abstract: No abstract text available
Text: N-CHANNEL LOGIC LEVEL POWER MOSFET 2N6901 • N-Channel Logic Level • Logic Level Power MOSFET Transistor In A Hermetic TO-39 Metal Package • Screening Options Available , °C Tc = 100°C Tc = 25°C Derate Above 25°C TA = 25°C 100V ±10V 100V 1.69A 1.07A 5A , Drain-Source Breakdown Voltage VGS = 0 ID = 1.0mA VGS = 5V ID = 1.07A 1.4 TJ = 125°C 2.6 , 5V ID = 1.69A Forward Transconductance VDS = 5V IDS = 1.07A VGS = 0 VDS = 80V


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PDF 2N6901 O-205AF) 2N6901
capacitor 107a

Abstract: 107A CAPACITOR VSD-350C-12 VSD-350C-24
Text: 350.4W 200mVp-p 43-53Vdc ±1% ±0.2% ±1% 81% 10.7A /48V 82% 10.7A /48V Protection type: shut , 95°C±5°C (TSW1) detect on main power transistor Protection type: shut down o/p voltage, recovers


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PDF VSD-350C 1500Vdc VSD-350C-5 VSD-350C-12 100mVp-p 120mVp-p 11-16Vdc 300ms, 36-72Vdc capacitor 107a 107A CAPACITOR VSD-350C-12 VSD-350C-24
TRANSISTOR 117a

Abstract: No abstract text available
Text: Silicon Bipolar Low Noise Microwave Transistors 2N2857 Case Style TO-72 CAN (509) Features • High Gain (19dB Typical @ 450 MHz) • Low Noise Figure At Low Ic • Gold Metalization • Useful To 700 MHz • Can be Screened to JANTX, JANTXV Equivalent Levels • Excellent Reliability , Transistor offers low noise, high gain performance, which meets or exceeds all JAN specifications. These , 108° 3.9 97° 3.7 91° 2.1 107 ° 2.2 102° 2.8 92° 3.4 87° 2.0 101° 2.2 97° 2.8


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PDF 2N2857 MIL-MRF19500 TRANSISTOR 117a
2001 - Not Available

Abstract: No abstract text available
Text: resistors (nominally 107⠄¦), which eliminate the requirement for four discrete termination resistors and , Circuit LVDS SIGNALS TX 107⠄¦ RX TX 107⠄¦ RX Applications Digital Copiers Laser , DATA INPUT LVTTL/LVCMOS DATA OUTPUT TX 107⠄¦ RX TX 107⠄¦ RX Network Switches , . TRANSISTOR COUNT: 1354 PROCESS: CMOS For LVDS applications, a four-layer PC board that provides separate , /MAX9122 Functional Diagram VCC VCC IN1+ IN1+ 107⠄¦ IN1- OUT1 107⠄¦ OUT2


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PDF MAX9122) MAX9121/MAX9122 MAX9122 MAX9121 500Mbps MAX9121/MAX9122
Not Available

Abstract: No abstract text available
Text: and package of incorporated transistors. a) First stage transistor R ,h(j-cn =13°C/W (Tvp.) b) Second stage transistor R .h(j-c)2=9°C /W (Typ.) c) Final stage transistor R ,h(j-c)3= 4°C /W (Typ , first stage transistor Note 2: Output power of the second stage transistor Note 3: Circuit current of the first stage transistor Note 4: Circuit current of the second stage transistor Note 5: Circuit current o f the final stage transistor Junction temperature o f the first stage transistor Mounting


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PDF M57749 903-905MHZ,
2007 - transistor marking code H11S

Abstract: H11S RA05H8693M RA05H8693M-101 marking CODE H11S
Text: RF Output (Pout) 5 RF Ground (Case) EQUIVALENT CIRCUIT 2 3 1 4 5 RA05H8693M , flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips , used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=3W, VDD=14V and Pin=1mW each stage transistor operating , temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase


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PDF RA05H8693M 866-928MHz RA05H8693M 928MHz transistor marking code H11S H11S RA05H8693M-101 marking CODE H11S
2007 - transistor marking code H11S

Abstract: H11S marking CODE H11S rf transistor mar 8 RA05H9595M RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w
Text: SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA05H9595M EQUIVALENT CIRCUIT 2 , mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded , coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=3W, VDD=14V and Pin=1mW each stage transistor operating conditions are: Pin IDD @ IT=1.4A Pout , 0.70 4.5 0.30 rd 3 0.700 3.00 3.0 1.07 The channel temperatures of each stage transistor Tch =


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PDF RA05H9595M 952-954MHz RA05H9595M 954-MHz transistor marking code H11S H11S marking CODE H11S rf transistor mar 8 RA05H9595M-101 MOSFET Amplifier Module 150 mhz amplifier module 5w
D-621-EE

Abstract: D-621-GE BROWN BOVERI brown Boveri diode D-621-GB D-621-EC BROWN BOVERI protection D621EC diode brown boveri 621GB
Text: rectifying, free wheeling or power transistor protection. D-621-EC D-621-EE Reverse Peak Reverse , Current, Single-Phase, Half-Wave DC Rating at 107Â °C Case Temperature 50 Amps Maximum Surge Current


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PDF D-6840 D-621 D-621-EE D-621-GE BROWN BOVERI brown Boveri diode D-621-GB D-621-EC BROWN BOVERI protection D621EC diode brown boveri 621GB
BDX 241

Abstract: transistor BD 246 transistor BD 240 TRANSISTOR 246 TRANSISTOR Bd 137 BD139-6 transistor bd 242 transistor BD 249 BD138 2n 3055 transistor
Text: BD137 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR _TT71 DESIGNED FOR COMPLEMENTARY USE WITH BD138 • Driver Stages • Active Convergence • Control Circuits • Switching Application • Ptot = 6.5 W at Tc = 60 °C • hpE > 40 at lc = 150 mA • UCE (sat) « 0.5 V at lc = 0.5 A These , ] \ t m - rr I-3N .1 . » i i - u i h ' 4 — - 3,75 - — - 10.7⠀” -— All dimensions are , . Texas Instruments 2-15 BD137 NPN EPITAXIAL PLANAR SILICON TRANSISTOR electrical characteristics at


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PDF BD137 BD138 MIL-STD-750. OT-32 OT-32 40PEP 80PEP BDX 241 transistor BD 246 transistor BD 240 TRANSISTOR 246 TRANSISTOR Bd 137 BD139-6 transistor bd 242 transistor BD 249 BD138 2n 3055 transistor
Not Available

Abstract: No abstract text available
Text: TO SHIBA TPS608A TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR T P Ç fi fl ft A ■■M F m » TRANSISTOR FOR PHOTO INTERRUPTER U nit in mm PHOTOELECTRIC COUNTER POSITION AND ROTATIONAL SPEED SENSOR AUTOMATIC CONTROL UNIT • F a st response speed • The sam e external shape as the infrared LED TLN107A, and is best suited for combination with TLN 107A as a photo interrupter. M A X IM U M RATINGS (Ta = 25°C) SYM BOL RATING U NIT


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PDF TPS608A TLN107A, TLN107A
2001 - Not Available

Abstract: No abstract text available
Text: MAX9122* MAX9123 Clock Distribution TX RX TX Pin Configuration 107⠄¦ 107⠄¦ RX , OUTPUT 14 OUT2+ VCC 4 MAX9123 TX 107⠄¦ RX TX 107⠄¦ RX 13 OUT2- GND 5 , connectors that have matched differential impedance. Chip Information TRANSISTOR COUNT: 1246 PROCESS


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PDF MAX9123 TIA/EIA-644 250ps MAX9123
Not Available

Abstract: No abstract text available
Text: resistive path from the charge source to the cell pack bypassing the regulating transistor . See the example , regulating transistor until the DS2715 switches to DISCHARGE mode. While in this mode, voltage sensing , control transistor into a low impedance state and allow the pack to be discharged. Current drain of the , PMOS transistor , enabling the use of a switch-mode power stage. PMOS is again preferred when the pass , voltage change on THM exceeds the equivalent TTERM ºC per minute (dT/dt Detect specification). Table 3


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PDF DS2715 DS2715 DS2715B
2009 - D2715

Abstract: No abstract text available
Text: resistive path from the charge source to the cell pack bypassing the regulating transistor . See the example , regulating transistor until the DS2715 switches to DISCHARGE mode. While in this mode, voltage sensing , control transistor into a low impedance state and allow the pack to be discharged. Current drain of the , PMOS transistor , enabling the use of a switch-mode power stage. PMOS is again preferred when the pass , voltage change on THM exceeds the equivalent TTERM ºC per minute (dT/dt Detect specification). Table 3


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PDF DS2715 DS2715 DS2715B D2715
2009 - Not Available

Abstract: No abstract text available
Text: resistive path from the charge source to the cell pack bypassing the regulating transistor . See the example , regulating transistor until the DS2715 switches to DISCHARGE mode. While in this mode, voltage sensing , control transistor into a low impedance state and allow the pack to be discharged. Current drain of the , PMOS transistor , enabling the use of a switch-mode power stage. PMOS is again preferred when the pass , voltage change on THM exceeds the equivalent TTERM ºC per minute (dT/dt Detect specification). Table 3


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PDF DS2715 DS2715 DS2715B
2009 - Not Available

Abstract: No abstract text available
Text: resistive path from the charge source to the cell pack bypassing the regulating transistor . See the example , transistor until the DS2715 switches to DISCHARGE mode. While in this mode, voltage sensing, thermal sensing , transistor into a low impedance state and allow the pack to be discharged. Current drain of the DS2715 drops , PMOS transistor , enabling the use of a switch-mode power stage. PMOS is again preferred when the pass , voltage change on THM exceeds the equivalent TTERM ºC per minute (dT/dt Detect specification). Table 3


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PDF DS2715 DS2715 DS2715B
2008 - thermistor 103AT-2

Abstract: semitec 103AT-2 NTC 103AT-2 DVD player circuit diagram 103AT-2 Data sheet of thermistor 10K ohms ntc 103at ntc semitec rohs AT overcharge protection circuit nimh DS2715Z T
Text: transistor . See the example in the circuit of Figure 3. The DS2715 remains in the DONE state until a cell , discharge current must flow through the parasitic diode of the PFET regulating transistor until the DS2715 , disabled. The VCH pin is driven low to fully bias the charge control transistor into a low impedance state , PMOS transistor , enabling the use of a switch-mode power stage. PMOS is again preferred when the pass , exceeds the equivalent TTERM ºC per minute (dT/dt Detect specification). Table 3. THM THRESHOLDS


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PDF DS2715 DS2715 DS2715: thermistor 103AT-2 semitec 103AT-2 NTC 103AT-2 DVD player circuit diagram 103AT-2 Data sheet of thermistor 10K ohms ntc 103at ntc semitec rohs AT overcharge protection circuit nimh DS2715Z T
2009 - d2715

Abstract: D2715B DS2715Z 197-103LAG-A01 DS2715 103AT-2 Semitec THERMISTOR DATE CODE 173-103LAF-301 8 pin resistor pack small size overcharge protection circuit nimh single cell
Text: one-way resistive path from the charge source to the cell pack bypassing the regulating transistor . See , diode of the PFET regulating transistor until the DS2715 switches to DISCHARGE mode. While in this mode , bias the charge control transistor into a low impedance state and allow the pack to be discharged , output is capable of driving a PNP bipolar or a PMOS transistor , enabling the use of a switch-mode power , normally and TOPOFF will begin if the voltage change on THM exceeds the equivalent TTERM ºC per minute (dT


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PDF DS2715 DS2715 DS2715: DS2715B d2715 D2715B DS2715Z 197-103LAG-A01 103AT-2 Semitec THERMISTOR DATE CODE 173-103LAF-301 8 pin resistor pack small size overcharge protection circuit nimh single cell
D2715

Abstract: fenwal sensing element fenwal thermistor marking CTG SO-16 overcharge protection circuit nimh single cell Semitec THERMISTOR DATE CODE sized transistor 107A equivalent
Text: the charge source to the cell pack bypassing the regulating transistor . See the example in the circuit , . Initially, the discharge current must flow through the parasitic diode of the PFET regulating transistor , the LED1 output are disabled. The VCH pin is driven low to fully bias the charge control transistor , and low thresholds. The VCH output is capable of driving a PNP bipolar or a PMOS transistor , enabling , will complete normally and TOPOFF will begin if the voltage change on THM exceeds the equivalent TTERM


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PDF DS2715 DS2715 DS2715B D2715 fenwal sensing element fenwal thermistor marking CTG SO-16 overcharge protection circuit nimh single cell Semitec THERMISTOR DATE CODE sized transistor 107A equivalent
2009 - fenwal sensing element

Abstract: No abstract text available
Text: charge source to the cell pack bypassing the regulating transistor . See the example in the circuit of , . Initially, the discharge current must flow through the parasitic diode of the PFET regulating transistor , the LED1 output are disabled. The VCH pin is driven low to fully bias the charge control transistor , is capable of driving a PNP bipolar or a PMOS transistor , enabling the use of a switch-mode power , voltage change on THM exceeds the equivalent TTERM ºC per minute (dT/dt Detect specification). Table 3


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PDF DS2715 DS2715 DS2715: DS2715B fenwal sensing element
1996 - lt1581

Abstract: No abstract text available
Text: Control Section . 0°C to 125°C Power Transistor , Circuitry/Power Transistor 2 q q q 0.004 0.65/2.50 0.020 %/W °C/W LT1581/LT1581 , current required for the output transistor . This current will track output current with roughly a 1:100 , power for the control circuitry and supply the drive current to the NPN output transistor . This allows , current for the NPN output transistor . This drive current becomes part of the output current. The


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PDF LT1581/LT1581-2 100mV 430mV LT1584. LT1575/LT1577 LT1580 LT1584 LT1585 158125fa lt1581
1995 - LTC1267

Abstract: No abstract text available
Text: MAXIMUM RATINGS Power Transistor LT1580C . 0°C to 150 , 0.002 Thermal Resistance, Junction-to-Case T, T7 Packages, Control Circuitry/Power Transistor 0.65 , for the output transistor . This current will track output current with roughly a 1:100 ratio. The , current to the NPN output transistor . This allows the NPN to be driven into saturation, thereby 6 , 7A load. The bulk of this current is drive current for the NPN output transistor . This drive


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PDF LT1580/LT1580-2 540mV 100mV LT1584. LTC1430 LT1584 LT1585 LT1587 158025fas, LTC1267
UDN2998W

Abstract: motor driver full bridge 20A UDN2993B 2998w UDN-2998W W108 UDN2993 UDN-2993B 3A, 50V BRIDGE W-10
Text: (ONE OF TWO DRIVERS) PHASE Dwg. No. W- 107A ALLOWABLE AVERAGE PACKAGE POWER DISSIPATION AS A FUNCTION , to provide for normal transistor operation, the ground tab must be connected to the most negative


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PDF UDN-2998W UDN-2998W UDN2998W motor driver full bridge 20A UDN2993B 2998w W108 UDN2993 UDN-2993B 3A, 50V BRIDGE W-10
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