The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
QLX4270RIQT7 Intersil Corporation DisplayPort Lane Extender; QFN46; Temp Range: 0° to 70°
QLX4270RIQSR Intersil Corporation DisplayPort Lane Extender; QFN46; Temp Range: 0° to 70°
ISL35111DRZ-TS Intersil Corporation 11.1Gb/s Driver; QFN16; Temp Range: 0° to 70°
ISL35411DRZ-TS Intersil Corporation Quad Driver; QFN46; Temp Range: 0° to 70°
QLX4600LIQT7 Intersil Corporation Quad Lane Extender; QFN46; Temp Range: 0° to 70°
QLX4600SIQT7 Intersil Corporation Quad Lane Extender; QFN46; Temp Range: 0° to 70°

t1 ee16 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - tdk ee16 pc40 bobbin

Abstract:
Text: EN BP D3 1N4007 C5 330 µF 16 V 8 T1 EE16 Lp = 1.6 mH C2 4.7 µF 400 V N 9 V , Winding Order (pin numbers) Primary Inductance EE16 Horizontal 10 pin Core Cancellation: 26T, 2 x , 9.0 250 200 150 100 50 0 30 PI-3879-051204 Bobbin 9.5 TDK PC40 EE16 , AL = 190


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PDF DI-77 TNY263P tdk ee16 pc40 bobbin core pc40 EE16 EE16 pc40 EE16 transformer construction EE16 DI-77 TinySwitch-II TDK EE16 PC40 core EE16 transformer t1 ee16 EE16 core transformer
2003 - Power Transformer EE-16

Abstract:
Text: T1 EE-16 C7 1.0 nF 1 kV R4 200 k 1/2 W NC 1 R3 100 D5 1N4005 GP L C1 6.8 , Frequency (132 kHz) operation allows small, low cost EE16 transformer · Built-in thermal shutdown , . TRANSFORMER PARAMETERS Core 200 EE16 , Nippon Ceramic NC-2H or equivalent, AL = 135 nH/T2 Bobbin


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PDF DI-34 TNY266P Power Transformer EE-16 EEL16 TNY266PN core EEL16 transformer EE16 transformer EEL16 transformer TNY266P EE16 ee16 transformer specification EEL-16
2006 - TNY276PN

Abstract:
Text: 10 V T1 EE16 D5 1N4007GP L3 Ferrite Bead 3.5 × 7.6 mm D6 SB260 R2 100 90-265 , using small, low cost EE16 core size · >15 dBV margin to EN55022B conducted EMI limits · No , controller turns it off, and the energy in T1 is transferred to the output. Schottky diode D6 and capacitor , . The internal MOSFET within U1 conducts current through the primary winding of T1 during each enabled , consistent EMI performance in production, manufacturing variations in transformer T1 must be minimized from


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PDF DI-118 TNY276PN EN55022B DI-118 TNY276PN TNY276PN equivalent TNY275PN TNY275PN equivalent equivalent diode for sb260 t1 ee16 TNY276P EE16 NC-2H tny275pn application EE16
2010 - TNY 264 equivalent

Abstract:
Text: POWER SUPPLY C6 2.2 nF R8 100 50 V L1 1.5 mH D1 1N4007 T1 EE16 C3 1 nF 1 kV R1 10 , 1N4007 C6 1 nF 50V R7 18 C3 1 nF 1 kV R1 270 k RF1 10 2W L2 3.3 µH T1 EE16 9 D7 1N5822 3 R3 28.7 k 1% FB R8 820 C7 1000 µF 16 V D6 1N4148 R6 , VAC T1 EE25 *Optional components TinySwitch-III U1 TNY278PN PI , POWER SUPPLY C8 3.3 nF 250 VAC T1 EF25 1 C5 1.0 nF 1 kV D10 3KBP08M 800 V R4 30


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PDF LNK603 LNK613 LNK623 PI-5667-030810 RDK-252) CAP014DG PI-5886-041310 TNY 264 equivalent LTV817D LNK626 50sq100 smd LTV-817D TOP266EG lnk606 TNY278PN TOP269EG tny 177
2010 - LNK632

Abstract:
Text: µH T1 EE16 9 1 BP S C4 1 µF 25 V L1 1 mH R4 4.42 k 1% PI , mH D1 1N4007 R1 10 k D2 1N4007 T1 EE16 C3 1 nF 1 kV R3 470 k 4 R4 300 , T1 EE12.5 4 D1 1N4007 D2 1N4007 3 C7 330 µF 16 V 5 6 R13 10 1/8 W , 265 VAC INPUT FLYBACK POWER SUPPLY +12 V, 1 A RTN 85 - 265 VAC T1 EE25 *Optional , C2 22 µF 400 V J2 12 V, 1.25 A D7 SB3100 6 D5 1N4007GP F1 3.15 A T1 R3


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PDF LNK603 LNK613 LNK623 FR107 1N4007 LM431 PI-5573-092109 LNK632 TNY 227 t1 ee16 lnk606 1N4007 SMD LNK626 TOP266EG 1N4007 tny 177 lnk616pg
2003 - TNY266PN

Abstract:
Text: VR7 is required. T1 EE-16 L 85 - 265 VAC The combined voltage drops of Zener diode (VR7 , ) operation allows small, low cost EE16 transformer · Built-in thermal shutdown protection · ON/OFF digital , Artificial Hand Connected to Secondary Return. Transformer Parameters 200 Core Material EE16


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PDF DI-34 TNY266PN EN55022 DI-34 TNY266PN TNY266PN equivalent EE16 10 pin vertical bobbin EE16 transformer EEL16 core EEL16 transformer Power Transformer EE-16 EEL16 transformer 101408 EE16
2008 - LNK625PG

Abstract:
Text: R2 330 L2 3.3 H T1 EE16 9 C7 1000 F 16 V D6 1N4148 C5 1 F 50V 5 V, 1.2 A , . This is to ensure that shielding techniques used in T1 are repeatable and effective at reducing , -5257-101608 70 QP 60 Bobbin EE16 , 10 pin, Horizontal Feedback: 19T × 2, 34 AWG, 4 layers tape Primary , H, ±10% AV 50 EE16 NC-2H or equivalent, gapped for ALG of 126 nH/t² Winding Details


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PDF DI-201 LNK625PG DI-201 LNK625PG diode FR107 equivalent EE16 lnk625 EE16 10 pin EE16 10 pin bobbin fr107 equivalent DI201 ee16 5 2 pin EE16 10 pin horizontal bobbin
2007 - LNK564PN

Abstract:
Text: . LinkSwitch-LP U1 LNK564PN R8 100 k D 0.125 W FB D5 SB520 RTN 3 4 T1 EE16 D7 1N4007GP , rectifies the output from transformer T1 . This rectifier is a low drop Schottky diode in order to maximize , EE16 NC-2H or equivalent, gapped for ALG of 197 nH/t2 Bobbin EE16 , 8 pin Winding Details


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PDF DI-154 LNK564PN CISPR-22/EN55022 DI-154 LNK564PN MOSFET 4166 E-Shield Transformer Techniques for Low EMI diode FR107 equivalent diode for clippers EE16 EE16 transformer construction LNK56 core ee16 transformer schematic topswitch StackFET
2006 - equivalent diode for sb260

Abstract:
Text: 13.7 k 1% C6 100 nF 50 V EN/UV 5.7 V, 800 mA C7 100 µF 10 V T1 EE16 TinySwitch-III , primary current reaches the MOSFET current limit, the controller turns it off, and the energy in T1 is , small, low cost EE16 core size >15 dBµV margin to EN55022B conducted EMI limits No Y-capacitor: <10 µA , output The internal MOSFET within U1 conducts current through the primary winding of T1 during each , transformer T1 must be minimized from unit to unit. This is especially important in designs that do not use


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PDF DI-118 TNY276P equivalent diode for sb260 TNY276P cc charger circuit EE16 TNY275P PI-44 ferrite core shield transformer pin connection DIODE FR107 E-Shield Transformer Techniques for Low EMI 1N4007GP d1
2007 - TNY274PN

Abstract:
Text: R4 100 D3 1N4002GP F1 T1 EE16 EN/UV BP/M R2 220 k S C5 100nF 50 V RX1 , rectifies the output of T1 . Output voltage ripple is minimized by using a low ESR capacitor for C7. A post , . No-Load Input Power Consumption Transformer Parameters Core Material EE16 NC-2H or equivalent, gapped for ALG of 193 nH/t² Bobbin EE16 , 10 pin, Horizontal Winding Details Bias: 32T x 2


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PDF DI-153 TNY274PN DI-153 TNY274PN voltage doubler circuit greinacher circuit diode FR107 equivalent EE16 topswitch StackFET gP DIODE EE16 10 pin bobbin greinacher TNY274P EE16 10 pin horizontal bobbin
2008 - LNK613DG

Abstract:
Text: C3 820 pF 3 1 kV R2 470 k D1 1N4007 D2 1N4007 T1 EE16 R1 10 k RF1 10 2W C1 , Limit Limit 3 Core Material EE16 , NC-2H or equivalent, gapped for ALG of 143 nH/t² Bobbin EE16 , Horizontal, 10 pins, (5/5) Shield: 23 T, 29 AWG Primary: 128 T, 36 AWG Feedback: 6T x 4, 30


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PDF DI-157 LNK613DG DI-157 LNK613DG 2MM5230B-7 TOPSWITCH battery charger 1N4007 operating frequency specifications of 1n4007 diode core ee16 transformer schematic EE16 diode 1N4007 specifications diode D1 1N4007 1N4007 ZENER DIODE
2008 - lnk616pg

Abstract:
Text: are skipped. R8 100 L1 1.5 mH D1 1N4007 R1 10 k D2 1N4007 T1 EE16 1 C3 1 nF , EE16 , Horizontal, 10 pins, (5/5) Winding Details Shield: 15T x 3, 35 AWG Primary: 105T, 35 AWG , Inductance 1.074 mH, ±10% PI-5142-051608 EE16 , NC-2H or equivalent, gapped for ALG of 88.55 nH/t² 1


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PDF DI-158 LNK616PG DI-158 lnk616pg LinkSwitch-II EE16 LNK61 TOPSWITCH battery charger switching time 1N4007 t1 ee16 EE16 10 pin horizontal bobbin diode 1N4007 specifications EE-16
2008 - LNK606PG

Abstract:
Text: have an open-circuit failure. R8 5.1 L1 2200 H D1 1N4007 R1 10 k D2 1N4007 T1 EE16 1 C3 1 nF 1 kV 7.6 V, 700 mA 9 R3 470 k D7 SB260 C7 680 F 16 V R9 1k , primary winding of T1 . The other side of the transformer's primary winding is driven by U1's integrated , pin, EE16 Winding Details Shield: 16T × 2, 32 AWG Primary: 96T, 32 AWG Feedback: 9T × 2, 27


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PDF DI-184 LNK606PG DI-184 LNK606PG pin configuration diode 1N4007 lnk606 EN55015 EN55015 driver DIODE 1N4007 Functions EE16 LC PI FILTER DESIGN led driver using the diode 1N4007 EE-16-1
2008 - lnk603dg

Abstract:
Text: D2 1N4007 T1 EE16 5 C3 820 pF 1 kV 8 V, 0.3 A FL1 R1 470 k D7 SS15 C7 100 , 85 VAC 115 VAC 175 VAC 230 VAC 265 VAC Min Limit Max Limit 4.5 3.5 Bobbin EE16 , Output Current (mA DC) Figure 2. EE16 , NC-2H or equivalent, gapped for ALG of 143 nH/t² Winding


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PDF DI-159 LNK603DG DI-159 lnk603dg LinkSwitch-II specifications of 1n4007 diode core ee16 transformer schematic EE16 components needed for pi controller diode 1N4007 specifications EE16 10 pin bobbin diode D1 1N4007 EE16 10 pin horizontal bobbin
2008 - LNK605DG

Abstract:
Text: LinkSwitch-II product R8 5.1 L1 1000 H T1 EE16 1 C3 1 nF 1 kV D1 1N4007 D2 1N4007 R1 , PC44, gapped for ALG of 139 nH/t² Bobbin Horizontal, 10 pins, EE16 Winding Details 65


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PDF DI-185 LNK605DG DI-185 LNK605DG PI CONTROLLER circuit EN55015 lnk605 EN55015-B EE16 led driver using the diode 1N4007 pin configuration diode 1N4007 EE-16-1
2005 - E-Shield Transformer Techniques for Low EMI

Abstract:
Text: conducted EMI noise filter. Resistor R1 dampens L1 1 mH C4* 100 pF 250 VAC T1 EE16 9 4 5 3 , of the parameters required to specify and build transformer T1 . The power transformer must have a


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PDF DI-89 LNK362P EN55022 E-Shield Transformer Techniques for Low EMI LNK362 33 uF 400 V EE16 LNK362P PI-4205-110805 DI-89 BZX79B5V1 1N4934 PC817A
2005 - LNK564

Abstract:
Text: 1N4937 L J-1 2.5 W 90-265 VAC 2 T1 EE16 7 D4 UF4002 C5 220 µF 25 V VR1* R3 , ( T1 ), conducted EMI is adequately attenuated by the LC filter formed by L1 and C1. Inductor L1 serves , techniques used on T1 , the primary winding can be left Clampless, since the peak drain voltage does not , Xls spreadsheet calculates all of the parameters required to specify and build transformer T1 . ·


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PDF DI-85 LNK564P LNK564 lnk564 charger LNK564P line frequency transformer Pi transformer design lnk564 E-Shield Transformer Techniques for Low EMI flyback ac charger EE16 DI-85 1N5240B
2006 - lnk564pn

Abstract:
Text: transformer T1 EE16 7 C5 220 F 25 V VR1* R3 1N5240B 6 V, 2 k 10 V 0.33 A J3-2 C1 10 F , constructing the transformer ( T1 ), conducted EMI is adequately attenuated by the LC filter formed by L1 and C1 , construction techniques used on T1 , the primary winding can be left Clampless, since the peak drain voltage , transformer T1 . · This design uses one of two "standard" transformers (see AN-39). With this transformer


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PDF DI-85 LNK564PN DI-85 lnk564pn line frequency transformer E-Shield Transformer Techniques for Low EMI EE16 J32 MOSFET UF4002 D0208 1N5240B 1N4937
SG6849-65DZ

Abstract:
Text: Diode FRI07 T1 EE-16 D2 Diode FR102 U4 IC SG6849 (Green PWM IC) C7 (Option , ) T1 EE-16 D5 (Option) BD1 (Reference only) U1 SG6849 (Green PWM IC) U2 , High-Line Low-Line Sense Sense Voltage VTH,VA Voltage 0V T1 T2 Oscillator Section Symbol , BD1 2 - + 4 + C1 C3 R1 C2 R3 R5 CX1 R4 D4 T1 10 2 L2 , D1 R10 8 5 22 R7 T1 10 R1 C7 1 F1 L + C8 + C9 D5 Q1 3


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PDF SG6849 65kHz) OT-26 IRO33 SG6849-65DZ SG6849-65D SG6849 fri07 TL431 PWM IC 6-PIN f1 fri07 diode ee-16 transformer EE-16 hysteresis 6-pin smps power control ic
fri07

Abstract:
Text: D1 Diode FRI07 T1 EE-16 D2 Diode FR102 U4 IC SG6849 (Green PWM IC) D4 D5 F1 , ; Schottky) T1 EE-16 D5 ZD/6.8V 0.5W U1 SG6849 (Green PWM IC) F1 11/2W Resistor U2 , VLIMIT Ramp TOFF 0.77V High-Line Low-Line Sense Sense Voltage VTH,VA Voltage 0V T1 , C1 C3 C2 R3 R5 R1 R4 D4 T1 10 2 1 1 L2 VO 2 R2 9 , C2 T1 10 2 1,2 D4 1 L2 1 Vo 2 3 1 R1 9 D1 R10 22 R7


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PDF SG6849 65kHz/100kHz) OT-26 IRO33 fri07 sot-26 pwm controller IC-F111 pwm driver sot-26 Green-Mode PWM Controller sot-26 bd1 1a 600v TL431 Marking f1 SOT26 Marking Y1 SOT26 PWM IC 6-PIN f1
SG6849-65DZ

Abstract:
Text: ) R 10 1206 D1 Diode FRI07 T1 EE-16 D2 Diode FR102 U4 IC SG6849 (Green PWM IC , ; Schottky) T1 EE-16 D5 ZD/6.8V 0.5W U1 SG6849 (Green PWM IC) F1 11/2W Resistor U2 , Sense Voltage VTH,VA Voltage 0V T1 T2 Oscillator Section Symbol Parameter FOSC , - + 4 + C1 C3 C2 R3 R5 R1 R4 D4 T1 10 2 1 1 L2 VO , C2 T1 10 2 1,2 D4 1 L2 1 Vo 2 3 1 R1 9 D1 R10 22 R7


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PDF SG6849 65kHz/100kHz) OT-26 IRO33 SG6849-65DZ sot-26 pwm controller CAPacitor 10U 50V 1206 PWM IC 6-PIN f1 SMPS flyback transformer medical SG6849 PWM IC 6-PIN DIP Green-Mode PWM Controller sot-26 transistor free oscillator circuit diagram 65khz
2010 - lnk606

Abstract:
Text: 270 k RF1 10 2W L2 3.3 µH T1 EE16 9 1 BP S C4 1 µF 25 V L1 1 mH R4 , 2.2 nF R8 100 50 V L1 1.5 mH D1 1N4007 R1 10 k D2 1N4007 T1 EE16 C3 1 nF 1 kV , 470 pF 50 V D5 FR107 D4 1N4007 T1 1 R2 180 k D2 1N4007 F1 90 - 265 VAC , INPUT FLYBACK POWER SUPPLY 4 D1 1N4007 D2 1N4007 T1 EE12.5 3 C7 330 µF 16 V 5 , RTN 2 1 C1 3.3 µF 400 V 85 - 265 VAC D3 1N4007 D4 1N4007 R1 4.7 k T1


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PDF LNK574 LNK603 LNK613 LNK623 1N4007 LM431 PI-5573-092109 lnk606 tny 177 1N4007 SMD LNK 605 TNY 227 TOP269E ee16 lnk LNK574 LNK605 smd 1n4007
2005 - LNK564

Abstract:
Text: designed to replace. D4 T1 EE16 7 UF4002 C5 220 µF 25 V VR1* R3 1N5240B 6 V, 2 k 10 V 0.33 , constructing the transformer ( T1 ), conducted EMI is adequately attenuated by the LC filter formed by L1 and , and construction techniques used on T1 , the primary winding can be left Clampless, since the peak , specify and build transformer T1 . This design uses one of two "standard" transformers (see AN-39). With


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PDF PI-3923-092705 LNK564 LNK564P lnk564 charger line frequency transformer similar LNK564 fusible resistor smd flyback cell phone ac charger LNK562-564 EPR-85 UF4002 SMD
2005 - LNK363

Abstract:
Text: VAC L1 1 mH T1 EE16 9 4 5 3 J1 RF1 8.2 k 2.5 W 8 C5 330 µF 16 V 6.2 V , transformer techniques, which uses T1 s primary winding capacitance to clamp the voltage spike that its , calculates all of the parameters required to specify and build transformer T1 . The power transformer must


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PDF LNK362 PI-4086-081005 LNK363-364 PI-4061-081005 LNK363 LNK363P 1N4005 smd LNK362 LNK362P Pi transformer design LNK364P E-Shield Transformer Techniques for Low EMI LNK362-364 POWER supply lnk364p
2006 - AP3700Z-E1

Abstract:
Text: Bridge D1-D4 1N4007*4 L1 330µ R2 R4 1.5M 100k T1 EE16 L2 5.5µ C9 470µ C11


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PDF AP3700 18Watt. AP3700 420mA, AP3700Z-E1
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