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E74739 94V0

Abstract: sung wei e74739 94V0 SMEW-N870A-T sung wei 08v0 cmkm-p3x kpc s4594v-0 cmkd-p3x cmkm P3X NTP-N870A-T e74739
Text: PUBLIC COMPANY LIMITED UL FILE No. E74060 (R) 94V-0 CPC-DPC-B 94V-0 SUNG WEI INDUSTRIES CO


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PDF KSM-213QCS E56063 CMKS-81X CMK-81X GG-194V0 NTP-N870A-T SMEW-N870A-T E55888 E74060 E74739 E74739 94V0 sung wei e74739 94V0 SMEW-N870A-T sung wei 08v0 cmkm-p3x kpc s4594v-0 cmkd-p3x cmkm P3X NTP-N870A-T e74739
POWER TRANSFORMER E154515

Abstract: scheme e131175 sampo E159656 foxconn e253117 e131175 XEPEX E140166 sony bando power transformer power transformer e190246 tamradio transformer e199273
Text: INDUSTRIAL CO LTD `` '' - CHANG ZHOU HUA WEI ELECTRONIC CO LTD `` '' - CHENG YI ELECTRONICS , LTD `` '' - DA SUNG ELECTRONICS CO LTD `` '' - DA WANG ELECTRONIC INDUSTRY CO LTD `` , - DEFOND COMPONENTS LTD `` `` '' - DONG SUNG ELECTRONICS CO LTD `` '' - DELTA , SUNG CO LTD '' - DUCK SUNG CO LTD '' - DUCK SUNG HITECH CO LTD `` `` '' - EASE ELECTRONICS , CO LTD `` LLC `` '' - EUCHERNG INDUSTRIES INC `` '' - EUN SUNG INDUSTRIAL CO LTD


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Not Available

Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR: AN OVERVIEW Sam sung Semiconductor is a unit of the Sam sung Group, a , . Sale s of Sam sung Electronics Co., Ltd., of which Sam su ng Semiconductor is a division, were more than $5.8 billion in 1989. For 1989, its earnings made Sam sung the world's 13th largest maker of , n Jose, California. Worldwide,Sam sung Semiconductor runs a total of some nine advanced R&D and , facilities ever built. Throughout the industry and across all of its product lines, Sam sung has become known


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Abstract: No abstract text available
Text: ( + 5V) Ground No Connection DQ1-DQ4 W ÖE RAS CS Vcc Vss N.C. 4 Ì SAM SUNG Electronics 11 2 , values are obtained with the output open. Icc is specified as average current. eg SAM SUNG , 10 0 15 10 0 15 Use tcAH tA W R tA R 0 20 65 95 0 20 75 115 <8SAM SUNG , egSAM SUNG Electronics 115 KM41C466 NOTES 1. An initial pause of 200/is is required after , co n tro lle d by tAA- TIMING DIAGRAMS READ CYCLE (Continued) D Q rD Q i sgSAM SUNG


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PDF KM41C466 64Kx4 130ns 150ns 180ns KM41C466-7 KM41C466-6 KM41C466-10 KM41C466
KM62256BLP-V

Abstract: KM62256BLS-V KM62256B KM62256BLG
Text: /Outputs Power (2.7-5.5V ) Ground No Connection (32-TSOP only) eg SAM SUNG Electronics 93 , I/O5 m 1 /0 4 I/O3 [Ü V ss [ l £ :g SAM SUNG Electronics 94 KM62256BL-V ABSOLUTE , °C »5 SAM SUNG Electronics 95 KM62256BL-V CAPACITANCE Item Input Capacitance Input , toLZ W toHZ to H Sg SAM SUNG Electronics 96 KM62256BL-V WRITE CYCLE Parameter Write Cycle , VIL, WE = Vh) (Address Controlled) 43 SAM SUNG Electronics 97 KM62256BL-V TIMING WAVEFORM


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PDF KM62256BL-V 240ns 120ns /35mW KM62256BLP-V: 28-pin 600mil) KM62256BLS-V: 300mil) KM62256BLP-V KM62256BLS-V KM62256B KM62256BLG
ti727

Abstract: No abstract text available
Text: change without notice. Page : 1 ( K M 44V 16004A S ) (C) 1996 Sam sung Electronics Printed in Korea , notice. Page : 2 ( K M 44V 16004A S ) (C) 1996 Sam sung Electronics Printed in Korea. 7^4142 D , ) (C) 1996 Sam sung Electronics Printed in Korea. 7^4142 00346Û1 103 This Material Copyrighted , change without notice. P a g e : 4 ( K M 44V 16004AS ) (C) 1996 Sam sung Electronics Printed in Korea , ( K M 44V 16004AS ) (C) 1996 Sam sung Electronics Printed in Korea. 71b4142 D[]34ÛÛ3 7ûb


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PDF KM44V16004AS 16Mx4 16004AS ti727
Samsung KS84C32 68030

Abstract: 68EC030
Text: of Motorola, Inc. TM i486 is a registered trademark of Intel, Inc. :jj SAM SUNG Electronics , 535 SAM SUNG Electronics 739 KS84EC30 Figure 2. Pin Configuration of the KS84EC30 DRAM , supports 256K, 1M and 4Mbit (1M -4) DRAMs. The logic symbol is shown in Figure 3. & SAM SUNG , RASO RA S I RAS2 RAS3 OO Ql 02 03 04 05 06 07 OS 09 eg SAM SUNG Electronics 741 KS84EC30 , ultiplexed Address 4 eg SAM SUNG Electronics o o < J v cc Refresh R equest/W rite Enable v ss


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PDF KS84EC30 68040/68EC030 68-pln KS84EC30 68-Pin 84EC30 40MHz Samsung KS84C32 68030 68EC030
cpl16

Abstract: No abstract text available
Text: Ï 1 1 IS fiR SAM SUNG Semiconductor 21 SAMSUNG 7964142 S E M I C O N D U C T O R , devices. f iH SAM SUNG * * Semiconductor 22 SAMSUNG S E M I CO ND UC TOR INC OS , 7964142 , d f SAM SUNG Semiconductor 23 SAMSUNG SEM ICO ND UC TO R INC 02 a 7964142 SAMSUNG , Values (O) R1 C O M 'L MIL 200 390 R2 390 750 Q ? SAM SUNG * * Semiconductor 24 SAMSUNG , 0.5V level with S, closed. SAM SUNG Semiconductor 25 SAMSUNG SEMICONDUCTOR INC 02 79 64142


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PDF CPL20 20-Pin CPL20 PAL20 D00t71ñ cpl16
Not Available

Abstract: No abstract text available
Text: (1.19) eg SAM SUNG Electronics 312 MEMORY MODULES KMM59256AN 256K X 9 DRAM SIMM Memory , /Out W ig SAM SUNG Address Inputs 13 Ae PCASO- 14 A? 15 DQ4 16 No , obtained with is specified as an average current. 8§ SAM SUNG Electronics KMM59256AN-8 KMM59256AN , to CAS tR C H 0 0 ns eg SAM SUNG Electronics 6 9 315 MEMORY MODULES , sR SAM SUNG Electronics 316 KMM59256AN MEMORY MODULES TIMING DIAGRAMS eg SAM SUNG


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PDF KMM59256AN KMM59256AN-8 150ns KMM59256AN-10 100ns 180ns KMM5925Ã
KM424C257

Abstract: No abstract text available
Text: ig SAM SUNG Electronics Pin Function Pin Name SC Serial Clock Serial Data Input/Output , ig SAM SUNG Electronics 959 PRELIMINARY CMOS VIDEO RAM KM424C257 ABSOLUTE MAXIMUM , the output open, Icc is specified as average current. »? SAM SUNG Electronics 960 , 20 50 ns 11 sg SAM SUNG Electronics ns 25 20 9 6 PRELIMINARY , 0 ns WB hold time Í rwh 10 15 15 ns a! SAM SUNG Electronics 8 8 8


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PDF KM424C257 424C257 125ns 150ns 180ns 28-PIN KM424C257
km62256blg

Abstract: KM62256BL-7
Text: ‹ Output Enable l/O-f-l/08 Electronics Power ( + 5V) Vss sg SAM SUNG Data Inputs/Outputs , * Typ: Vcc=5V, TA=25°C . q: SAM SUNG Electronics 81 KM62256BL/KM62256BL-L (f = 1 M H z , T a , Output Disable to High-Z Output Output Hold from Address Change sg SAM SUNG Electronics 70 85 , TIMING DIAGRAMS READ CYCLE TIMING 1 (C3=OE=vIL WE=V,H , ) Address Data out s i SAM SUNG , Care. s§ SAM SUNG 85 KM62256BL/KM62256BL-L CMOS SRAM DATA RETENTION CHARACTERISTICS P


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PDF KM62256BLKM62256BL-L KM62256BLP/BLP-L: 28-pin KM62256BLS/BLS-L: KM62256BLG/BLG-L: KM62256BL/BL-L 144-bit 300mil) km62256blg KM62256BL-7
Not Available

Abstract: No abstract text available
Text: lly TTL com p a tib le . The KM416C256LL is fab ricate d using S am sung 's ad vanced CMOS process. GENERAL DESCRIPTION The S am sung KM416C256LL is a CMOS high speed 262,144 b it x 16 D ynam ic Random A , Standard pinout · Available in Plastic SOJ and ZIP FUNCTIONAL BLOCK DIAGRAM eg SAM SUNG Electronics , reliability. ig SAM SUNG Electronics 617 KM416C256LL RECOMMENDED OPERATING CONDITIONS P ara m ete , xim um on ce w h ile UCAS and UCAS = V,H. sg SAM SUNG Electronics 618 KM416C256LL


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PDF KM416C256LL KM416C256LL-7 KM416C256LL-8 KM416C256LL-10 100ns 130ns 150ns 180ns 416C256LL KM416C256LL
Not Available

Abstract: No abstract text available
Text: to be asserted immediately. !K SAM SUNG Electronics The KS84C31/32 modes: DRC offers four , 2 I® Iœ Œ u 4; SAM SUNG Electronics 683 KS84C31/32 When a page miss is detected, the , R3 R4 R5 R6 R7 R8 R9 CO C1 C2 C3 C4 CS C6 C7 C8 C9 qj SAM SUNG Electronics , v ss Q4 Vss Multiplexed Address 4 67 68 eg SAM SUNG Electronics 685 KS84C31/32 , sample WAITIN again until the next access. ¡»SAM SUNG Electronics 687 KS84C31/32 Table 3


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PDF KS84C31/32 KS84C31 KS84C32
Not Available

Abstract: No abstract text available
Text: trademark of Intel, Corp. «RSAM SUNG Electronics 260 ç SAMSUNG SEMICONDUCTOR INC 23E D , § SAM SUNG Electronics CLK System Clock 18 SO/HOLD Status Input SO/Hold 19 ST , having higher priority. LOCK is sampled at the end of every bus state. sg SAM SUNG Electronics , processor LOCK. s§ SAM SUNG Electronics 263 SAMSUNG SEMICONDUCTOR INC 23E D 7^4142 , SAM SUNG Transfer A lower priority master can gain the bus in between the bus master's transfer


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PDF 0000a2b KS82C289 KS82C289 20-pin 20-pln 82C289
Not Available

Abstract: No abstract text available
Text: : FLASH TIME SELECT ïR Electronics SUNG SAM 173 CMOS INTEGRATED CIRCUIT KS58008 BLOCK , sR SAM SUNG Electronics 174 KS58008 CMOS INTEGRATED CIRCUIT ARRANGEMENT OF KEY BOARD 1 , M/B 2 : 3 (M : B) sR SAM SUNG Electronics 175 KS58008 CMOS INTEGRATED CIRCUIT Pin , Column Key input. Low at the stand by 1 8 -2 1 22 lo 14 HFDO eg SAM SUNG Electronics , tpA 2.47 (3.7) sec eg SAM SUNG Electronics 177 KS58008 CMOS INTEGRATED CIRCUIT


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PDF KS58008 KS58008 617ms) 20pps)
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Abstract: No abstract text available
Text: SUNG Electronics 178 KS58531 ~ KS58542 CMOS INTEGRATED CIRCUIT BLOCK DIAGRAM Vss sg SAM SUNG Electronics 179 KS58531 ~ KS58542 CMOS INTEGRATED CIRCUIT PIN CONFIGURATION , C7 C8 «BSAM SUNG Electronics 180 KS58531 ~ KS58542 PIN DESCRIPTION Pin Name CMOS , 1,331.7 1,471.8 + 0.31 -0 .4 9 -0 .5 4 + 0.74 + 0.57 + 0.32 -0 .3 5 (g SAM SUNG 181 , , pressing this key will cause the memory clear and the memory revision. «RSAM SUNG Electronics 182


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PDF KS58531 KS58542 KS58542 579545MHz 14-level,
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Abstract: No abstract text available
Text: eg SAM SUNG Electronics 177 KA2223 LINEAR INTEGRATED CIRCUIT ABSOLUTE MAXIMUM RATINGS , c , C 2 (R i =1.2K, R 2=68K on-chip resistor) SAM SUNG Electronics 179 KA2223 LINEAR , -Band) VCC OUTPUT Fig. 3 sg SAM SUNG Electronics 180 LINEAR INTEGRATED CIRCUIT KA2223 , DISTORTION-OUTPUT VOLTAGE TOTAL H A R M O N IC DISTORTION FR EQ U EN C Y sg SAM SUNG Electronics TOTAL H A , ), A M B IE N T T E M P E R A T U R E eg SAM SUNG Electronics n K T O ^ T lO M * 0 " 10 'A M B


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PDF KA2223 KA2223
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Abstract: No abstract text available
Text: ULTIBU S is a tradem ark o f Intel, Corp. egElectronics SUNG SAM 260 KS82C289 BUS ARBITER , Priority Out 9 BPRN Bus Priority In 10 VSS G round sRElectronics SUNG SAM LOCK , arbiters having higher priority. LOCK is sampled at the end of every bus state. sRElectronics SUNG SAM , . LLOCK is active low and it is decoded from the processor LOCK. <8 Electronics SUNG SAM 263 , . Always Release Mode cRSAM SUNG Electronics a) a low er p riority bus master demands the bus by


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PDF KS82C289 KS82C289 20-pin 82C289
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Abstract: No abstract text available
Text: l/O i-l/08 Output Enable Data Inputs/Outputs Vcc Vss N.C. <8 SAM SUNG Electronics , SAM SUNG Electronics 55 KM6264B/KM6264BÜKM6264BL-L CAPACITANCE CMOS SRAM (f =1M Hz, T , Chip Disable to High-Z Output eg SAM SUNG I Electronics 10 10 ns 56 KM6264B , DIAGRAMS TIMING^ WAVEFORM OF READ CYCLE NO. 1 (CS1 = O E = V il, CS2 = W E = V,h) sg SAM SUNG , UNDEFINED eg SAM SUNG Electronics Ä -tow- d 58 CMOS SRAM KM6264B/KM6264BL/KM6264BL-L


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PDF KM6264B/KM6264BL/KM6264BL-L 55mW/MHz KM6264B/BL/BL-L: 28-pin KM6264BS/BLS/BLS-L: KM6264BG/BLG/BLG-L: KM6264B/BL/BL-L 536-bit
KM681000AL-V

Abstract: KM681000ALP-V KM681000ALT KM68100al
Text: d usin g S am sung 's advanced CMOS process and high-speed c irc u it tech nolog y. The KM68100AL-V , In p u ts/O u tp u ts P ow er (2.7-5 .5 V ) G round No C o nn ection eg SAM SUNG Electronics , SAM SUNG Electronics 142 KM681000AL-V CAPACITANCE Item Input C apacitance Inp u t/O u tp u t , |H) (A ddress C ontrolled) k: SAM SUNG Electronics 144 KM681000AL-V TIMING WAVEFORM OF , C ontrolled) eg SAM SUNG Electronics 145 KM681000AL-V TIMING WAVEFORM OF WRITE CYCLE (2


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PDF KM681000AL-V 240ns 120ns 0/iW/35mW KM681000ALP-V: 32-pin 600mil) KM681000ALG-V: 525mil) KM681000AL-V KM681000ALP-V KM681000ALT KM68100al
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Abstract: No abstract text available
Text: 1 0.3 mA 7 45 15 V V * Typ: Ta=25°C egSAM SUNG Electronics 2 , 30 0 10 iR SAM SUNG Electronics 240 Min 120 120 ns ns ns ns 3 , ) egSAM SUNG Electronics 4 KM62256BL-V CMOS SRAM TIMING WWEFORM OF READ CYCLE ( W E = V ih , Data out ■»»»»>»»»■X "tow- -ton- Data in m cRSAM SUNG Electronics , SUNG Electronics 6 KM62256BL-V CMOS SRAM DATA RETENTION CHARACTERISTICS (Ta= -0to70°c


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PDF KM62256BL-V 240ns 120na 0/xW/35mW KM62256BLPV: 28-pln KM62256BLS-V: KM62256BLG-V:
CS1J

Abstract: No abstract text available
Text: A7 WÊ CSi, CS2 OE l/0 ,-l/0 8 Vcc Vss N.C. OE jo t <8 SAM SUNG 214 SAMSUNG , SAM SUNG Electronics < II o 215 SAMSUNG SEMICONDUCTOR INC 23E D 7^^4142 , ns 45 45 20 5 0 0 5 0 35 15 20 5 0 0 5 0 tpü tpo dS SAM SUNG Electronics 216 SAMSUNG , ) «RSAM SUNG Electronics 217 SAMSUNG SEMICONDUCTOR INC 23E D 7 1 1 3 4 3 ,4 5 , CYCLE (WE Controlled) sg SAM SUNG Electronics 218 SAMSUNG SEMICONDUCTOR INC 23E D


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PDF 7Tb4142 KM6865P/KM6865LP 28-pin KM6865P/LP 536-bit CS1J
Not Available

Abstract: No abstract text available
Text: CONTROL sg SAM SUNG Electronics FREQUENCY DIVIDER 2 ALARM OUTPUT 116 KS5212 CMOS , chip. ïg Electronics SUNG SAM 117 CMOS DIGITAL INTEGRATED CIRCUIT KS5212 M1 AND M2 , €” -1SEC - — — -1SEC- -— ! Fig. 2 sg SAM SUNG Electronics , ,000 sR SAM SUNG Electronics 119 KS5212 2) CMOS DIGITAL INTEGRATED CIRCUIT Bare Chip , SUNG Electronics 120 KS5212 CMOS DIGITAL INTEGRATED CIRCUIT PAD DIAGRAM (1500,1380


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PDF KS5212 KS5212 32768Hz KS5212X2 KS5212X3 KS5212X1 KS5212X4 KS5212XG
Not Available

Abstract: No abstract text available
Text: SUNG SAM Pin Function Serial Clock Serial Data Input/Output Data Transfer/Output Enable Write , [K> ü Ae U j ID a , As A4 El El Vcc [Î4 sg Electronics SUNG SAM m m m , fl23 H S M G K PRELIMINARY CMOS VIDEO RAM FUNCTIONAL BLOCK DIAGRAM Vcc Vss ig SAM SUNG , with the output open, Icc is specified as average current. egElectronics SUNG SAM 960 â , w rite cycle tim e 05SAM SUNG Electronics 40 3 ns 3 30 ns 7 50 ns


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PDF KM424C257 125ns 28-PIN 0D13625
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Abstract: No abstract text available
Text: locks w— :§ SAM SUNG Electronics Ves Generator 528 SAMSUNG ELECTRONICS INC b4E  , . No Connection CÄS Column Address Strobe ig SAM SUNG Electronics 1 ZD Vec 2 ID DQ! 3 , in ~ ''',‘S. CgSAM SUNG Electronics > > > 1 200 100 l i t i ftAS-Only Refresh , 10 10 15 ns :0SAM SUNG Electronics 531 SAMSUNG ELECTRONICS INC fci4E D H , 50 RAS pulse width (fast page mode) «5SAM SUNG 50 45 45 RAS hold time from CAS


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PDF KM48C512/L/SL 0D133bS KM48C512/L/SL KM48C512/USL-7 130ns KM48C512/L/SL-8 150ns 100ns 180ns KM48C512/L/SL-10
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