The Datasheet Archive

Top Results (4)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
5015911211 5015911211 ECAD Model Molex CONNECTOR, BOARD STACKING CONNECTOR
5015911011 5015911011 ECAD Model Molex CONNECTOR, BOARD STACKING CONNECTOR
5015310410 5015310410 ECAD Model Molex CONNECTOR, BOARD STACKING CONNECTOR
OPA2137EA/250 OPA2137EA/250 ECAD Model Texas Instruments Low Cost FET-Input Operational Amplifier 8-VSSOP

stacked FETs Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
ESD Considerations for SOI Switch Design

Abstract: No abstract text available
Text: 20 0 0 5 10 15 20 25 30 # of Stacked FETs Figure 3: Measured maximum , antenna ports under a high VSWR condition, it is no longer feasible to use the stacked diode network for


Original
PDF
Not Available

Abstract: No abstract text available
Text: should be blocked from the SOI switch. To achieve higher power handling, SOI FETs are stacked to divide , of frequency. By designing with the proper number of stacked FETs and the correct periphery, SOI , function. Most switching FETs use a depletion mode configuration, which means that the channel is , . Typical SP2T with Series-Shunt Configuration A complete switch can be fabricated by arranging FETs in , a typical single pole two-throw (SP2T) switch comprised of series and shunt FETs . In the isolation


Original
PDF BRO378-12B
PE42510A

Abstract: PE43204 PE9309 PE97022 PE97042 PE97632 SYNTHESIZER FOR phased array SPDT FETs "stacked fets"
Text: serial- cess enables stacked FETs , which allow unprecedented addressable programming. UltraCMOS


Original
PDF
IBM efuse

Abstract: BICMOS 250nm Nitride CMOS Stacked RF efuse MIM 205 IBM SiGe
Text: IBM Global Engineering Solutions SiGe BiCMOS 6WL: Next-generation benefits in a lower-cost technology SiGe BiCMOS 6WL enables clients to take advantage of FETs and eFuse devices based on the , further by adding a nitride/high-k stacked MIM option to provide designers with the flexibility to better , specifications applications. IBM's SiGe BiCMOS 6WL foundry offering features three HBT devices, FETs , Capacitors VNCAP Nitride MIM (2.05 fF/µm2) High-k MIM (4.1 fF/µm2) Nitride/high-k stacked MIM (6.15 fF


Original
PDF 250-nm TGD03010-USEN-01 IBM efuse BICMOS 250nm Nitride CMOS Stacked RF efuse MIM 205 IBM SiGe
1999 - BU508 TRANSISTOR gate driver circuit

Abstract: BU508 TRANSISTOR equivalent schematic diagram UPS 600 Power structure TRANSISTOR c2324 Mallory SFC ETD34 CORE 11DQ10 equivalent simplest flyback converter schematic diagram UPS active power 400 gate drive circuit for active clamp forward flyback converter
Text: Technical Paper STP 99-10 CIRCUIT DESCRIPTION STACKED FLYBACK CONVERTERS WITH LOW POWER , potentials. Stacked secondary rectifier configurations and diode-split transformer construction have been , high-voltage outputs. When this technique is adopted on the primary side, the result is the stacked flyback , these conditions. Flyback converters seem to offer the STACKED FLYBACK CONVERTERS WITH LOW POWER , for dealing with this phenomenon in the SFC. Figure 1: Driving a " stacked primary" FET with a


Original
PDF
Recent Progress in III-V Devices and Modules for Next Generation Mobile Handsets

Abstract: No abstract text available
Text: GaAs-based field effect transistors ( FETs ) have become the preferred choice for the high performance RF , flexibility will be presented. There are numerous publications describing the integration of III-V FETs and , obtained at Skyworks’ Newbury Park fab. FETs in the above mentioned merged BiFET technology are , manufacturing solution by die-stacking. An example of a pHEMT based switch stacked on top of a HBT PA in a 3 mm , ) D. Cheskis, et al,"Co-integration of GaAlAs/GaAs HBTs and GaAs FETs with a Simple, Manufacturable


Original
PDF
2011 - Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN

Abstract: 180NM IBM
Text: process with shallow-trench isolation to provide isolation between FETs and other devices. Both thin and thick gate-oxide FETs are available in the technology, with an operating voltage of 1.8 V and 3.3 V, respectively. Triple-well isolation is provided for both types of FETs for improved substrate isolation. MIM , are stacked to sustain higher voltage swings and therefore improve the power handling of the switch , channel length of nMOS devices used is 0.32 m. At high frequency, the power handling of switch FETs is


Original
PDF 11b/g Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN 180NM IBM
viasat

Abstract: x-band power transistor 50W PE4150 PE42510A PE95420 Thales x-band X-band marine radar stacked FETs JTRS
Text: direct impact on reliability. In UltraCMOS, the FETs can be stacked in series, which allows for higher , capacitances (Csb, Cdb, Cgb, for example). The Figure 4: By stacking the UltraCMOS FETs , it is possible fully insulating sapphire substrate allows for to handle higher power levels. This figure shows 8 FETs , the , eight UltraCMOS FETs , with DC Vgs of +2.75V. The net result is that each FET handles 2.57 Vpk. By


Original
PDF com/articles/2008/2008 PE95420) viasat x-band power transistor 50W PE4150 PE42510A PE95420 Thales x-band X-band marine radar stacked FETs JTRS
2011 - 500w Full bridge transformer

Abstract: PWM controller for ZVS half-bridge LM5046 400V to 48V converter a new zvs pwm full bridge converter with reduced stacked FETs leakage inductor Increasing voltage converters Full-bridge converter step up converter 12V 36V 500w
Text: achieves zero voltage switching (ZVS) of the primary FETs while maintaining constant switching frequency , topology is similar to the hard switching full-bridge i.e. When the FETs in the diagonal of the bridge , four primary FETs are off, in the PSFB topology the primary of the power transformer is shorted by activating either both the top FETs (Q1 and Q4) or both the bottom FETs (Q2 and Q3) alternatively. When , facilitates zero voltage switching for all four primary FETs . For example, the power transfer cycle enabled


Original
PDF
2007 - fuel cell 5 kW

Abstract: BQ29412 fuel level schematic 16v zener diode bq20z80 bq20z90 bq29410 digital fuel gauge dual fet q7
Text: chipset, which uses P-channel protection FETs . As shown in Figure 2, the eight cells can be stacked , bq20z70/75/90/95 that use N-channel protection FETs , some of which integrate both the fuel gauge , FETs are to be located on the Pack+ side, the gate voltage required to turn them on needs to be , pumps, the protection FETs can be placed between the two sets of four-series cells. This, however , to find a way to turn the protection FETs on and off without consuming too much power or damaging


Original
PDF SLUA435 bq20z80 fuel cell 5 kW BQ29412 fuel level schematic 16v zener diode bq20z90 bq29410 digital fuel gauge dual fet q7
stacked transistor shunt switch

Abstract: stacked transistors SOI RF Peregrine 2000 stacked diplexer and duplexer for GSM and DCS ultra high frequency FETs or transistors SOI series shunt stacked FETs soi stacked FETs circulator s band switching circulator
Text: they reduce the size and hence cost of ASMs. GaAs switches use multiple FETs per switching path and require one control line per path. Unlike PINs, pHEMT FETs cannot intrinsically tolerate the 17.8 Vpk GSM signal. By placing multiple FETs in series, the voltage can be divided across the devices to meet the power handling requirement. Shunt FETs can be added to improve isolation and increase immunity , twelve. To meet the GSM isolation requirement of 35 dB, shunt FETs or cascaded switches must be used


Original
PDF
2012 - max14920

Abstract: MAX14921 fet ba7 max17501 max14850
Text: conversion. The devices enable passive cell balancing through drivers that control external discharge FETs . A , n-channel FETs can be connected for passive balancing of cells. Select low onresistance FETs with a VT less than VBAH. Connect the FETs between each cell's anode and cathode through a current-limiting resistor in the drain (Figure 9). The charge-balancing FETs can be enabled through SPI control. An internal , FETs and sampling


Original
PDF MAX14920/MAX14921 12-/16-Cell MAX14920 MAX14921 fet ba7 max17501 max14850
2000 - AUDIO MOSFET POWER AMPLIFIER SCHEMATIC

Abstract: elna 50v CA-S36-24B-44 elna capacitor 220uF 50v T491A225M025AS LX1710 LX1710CDB LX1711CDB LX1720 LXE1710
Text: controlling external FETs connected in a full bridge configuration. The full bridge configuration is , the LC filter stage. Because the FETs are either fully "on" or fully "off", Class-D topology is , Stacked MF 0.1uF 50V 5% Capacitor Stacked MF 0.47uF 50V 5% Capacitor Stacked MF 0.68uF 50V 5% Capacitor


Original
PDF LXE1710 LXE1710/1711 LX1710/1711 ECQ-V1H474JL ECQ-V1H684JL RV-25V221MH10-R CR32J103T AUDIO MOSFET POWER AMPLIFIER SCHEMATIC elna 50v CA-S36-24B-44 elna capacitor 220uF 50v T491A225M025AS LX1710 LX1710CDB LX1711CDB LX1720
2000 - CA-S36-24B-44

Abstract: single supply 50w transistor mono audio amplifier AUDIO MOSFET POWER AMPLIFIER SCHEMATIC elna capacitor 220uF 50v audio amplifier 50w 50v audio amplifier 50w RM73B3A ASJ CR LX1720 2 x 40w CLASS-D amplifier
Text: controlling external FETs connected in a full bridge configuration. The full bridge configuration is , the LC filter stage. Because the FETs are either fully "on" or fully "off", Class-D topology is , , Tant, 4.7uF, 16V, 20% 11 12 13 14 Capacitor Stacked MF 0.1uF 50V 5% Capacitor Stacked MF 0.47uF 50V 5% Capacitor Stacked MF 0.68uF 50V 5% Capacitor, Elect 220uF, 25V, 20% Part Description


Original
PDF LXE1710 LXE1710/1711 LX1710/1711 ECQ-V1H474JL ECQ-V1H684JL RV-25V221MH10-R CR32J103T CA-S36-24B-44 single supply 50w transistor mono audio amplifier AUDIO MOSFET POWER AMPLIFIER SCHEMATIC elna capacitor 220uF 50v audio amplifier 50w 50v audio amplifier 50w RM73B3A ASJ CR LX1720 2 x 40w CLASS-D amplifier
2000 - CA-S36-24B-44

Abstract: AUDIO MOSFET POWER AMPLIFIER SCHEMATIC audio power amplifier 40w 4 ohm RV-25V221MH10-R AUDIO MOSFET POWER AMPLIFIER SCHEMATIC schematic diagram LX1711CDB LX1720 elna 50v Speaker 40W LX1710CDB
Text: generates a PWM output by controlling external FETs connected in a full bridge configuration. The full , output of the bridge driving the LC filter stage. Because the FETs are either fully "on" or fully "off" , , Tant, 4.7uF, 16V, 20% 11 12 13 14 Capacitor Stacked MF 0.1uF 50V 5% Capacitor Stacked MF 0.47uF 50V 5% Capacitor Stacked MF 0.68uF 50V 5% Capacitor, Elect 220uF, 25V, 20% Part Description


Original
PDF LXE1710 LX1710/1711 ECQ-V1H474JL ECQ-V1H684JL RV-25V221MH10-R CR32J103T CA-S36-24B-44 AUDIO MOSFET POWER AMPLIFIER SCHEMATIC audio power amplifier 40w 4 ohm RV-25V221MH10-R AUDIO MOSFET POWER AMPLIFIER SCHEMATIC schematic diagram LX1711CDB LX1720 elna 50v Speaker 40W LX1710CDB
2010 - Modeling of SOI FET for RF Switch Applications

Abstract: No abstract text available
Text: imbalance, a direct result of the substrate loss, in a switch made of many FETs stacked in series. The , consists of a number of transistors stacked in series and in shunt to ground as shown in Fig. 1. The number of stacked transistors in series is determined by the maximum voltage for reliable operation of a , critical factor to determine the voltage imbalance of a switch made of many (>10) transistors stacked in , shows the measured harmonic data versus the model of a 12- stacked FET switch of 2.5mm width each. nd


Original
PDF 12-stacked 12stacked Modeling of SOI FET for RF Switch Applications
2004 - IRLRO24N

Abstract: DC converter 325V IRLRO24 CTX02-14261 dc to dc 12v to 19v converter circuit design CTX02 12v in 48v out controller driver trifilar CEPH149-1R0 1206x7r
Text: voltage, low threshold FETs with less than 60nC of gate charge are readily available. Besides meeting , transferred to two stacked 24V outputs to make ­48V. C6 charges to a DC value equal to 29V (VIN + 24V , secondaries are stacked to provide ­65V. C6 is added to improve cross-regulation, even when most of the power is drawn from one winding. An additional benefit of the stacked windings is a lower voltage


Original
PDF LT1619 IRLRO24N DC converter 325V IRLRO24 CTX02-14261 dc to dc 12v to 19v converter circuit design CTX02 12v in 48v out controller driver trifilar CEPH149-1R0 1206x7r
2000 - FDS4953

Abstract: LX1711CDB LX1710 LX1711 LX1720 LXE1710
Text: external FETs connected in a full bridge configuration. The full bridge configuration is connected , filter stage. Because the FETs are either fully "on" or fully "off", Class-D topology is extremely , smoothes out ripple current and should be placed close to the output FETs . C16 Oscillator frequency , used for the power supply bypass for the FETs . Place adjacent to the FETs or consider lower value ESR , Stacked MF 0.1uF 50V 5% Capacitor Stacked MF 0.47uF 50V 5% Capacitor Stacked MF 0.68uF 50V 5% Capacitor


Original
PDF LXE1710 LX1710/1711 LX1720 imAJA475M016R ECQ-V1H104JL ECQ-V1H474JL ECQ-V1H684JL FDS4953 LX1711CDB LX1710 LX1711
2008 - ltc6802

Abstract: wheelchair Linear Technology Multicell Battery Stack AEC-Q100 stacked FETs
Text: News Release www.linear.com High Voltage Battery Stack Monitor Supports Hybrid/Electric Vehicles & Battery Backup Systems MILPITAS, CA ­ September 22, 2008 ­ Linear Technology announces the LTC6802, a highly integrated multicell battery monitoring IC capable of measuring up to 12 individual battery cells. The device's proprietary design allows multiple LTC6802s to be stacked in series without , · Onboard FETs for Cell Discharge · Temperature Sensor Inputs · Built-In Precision 3V


Original
PDF LTC6802, LTC6802s ltc6802 wheelchair Linear Technology Multicell Battery Stack AEC-Q100 stacked FETs
MOSFET NOTEBOOK

Abstract: an667 APP667 FDS6680 IRF7801 MAX1636 Si4420 MOSFET Parameters
Text: about 22V. This voltage (considering tolerance errors in the AC adapter), stacked on the headroom , are less important, so die sizes can be made much smaller than those of high-side FETs . The resulting , smaller die size for a given Rds(ON). N-channel FETs also offer switchingtime advantages over their , capabilities for 1A, 2A, 3A, 4A, and 8A. The FETs would let you make the right Rds(ON) versus Miller


Original
PDF com/an667 AN667, APP667, Appnote667, MOSFET NOTEBOOK an667 APP667 FDS6680 IRF7801 MAX1636 Si4420 MOSFET Parameters
2012 - NTC 1K

Abstract: No abstract text available
Text: — Controlling of charge/discharge FETs ● Status LEDs for easy evaluation ● Charge balancing ● Coulomb , with 2 Stacked Atmel ATA6870 and Atmel ATMega32HVB Atmel ATA6870-DK10 [APPLICATION NOTE] 9228Bâ , default software disables the FETs in case of these events: ● Overvoltage (at least 1 cell exceeds the , Busy (CADUB) bit in CADSRA is cleared and written by hardware. 5.2 Charging/Discharging FETs The two FETs are controlled by an N-channel FET driver. The pins (OC and OD) are designed for outputting a


Original
PDF ATA6870 ATmega32HVB ATA6870-DK10 ATA6870 12-bit 9228Bâ ATA6870-DK10 ATA6870, NTC 1K
2013 - Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM

Abstract: TPC2A Alcatel-Lucent
Text: switch and switch controller. The switch consists of two series FETs (M1 and M2) and two shunt FETs (M3 , , H., and and O., K.K.: ‘A 31.3-dBm bulk CMOS T/R switch using stacked transistors with


Original
PDF
TO-126LP

Abstract: No abstract text available
Text: bags. MOS FETs and other devices that are sensitive to static electricity are usually stored in special , transistors are heavier than most other devices, avoid storing them in stacked boxes since this can cause lead


OCR Scan
PDF
2006 - Q13FC1450000614

Abstract: avr vr3 AVR453 avr vr6 VR3 avr ATMEGA406 CONN2 Sim jumper Q13FC145 0-150VDC
Text: power supply +24V max. 3 FETS I/O From power MOSFETs. Connect to most positive cell , V-SIM +24V FETs JB3 Internally connected 1 J1 JB4 1 GND I-SIM +/-5V ±5V , SB100 board, labeled as such. The ATmega406 supports from two to four stacked Li-Ion cells. As many , 2-4. Connecting battery cells to CONN2. CONN2 3/6/9/. cells 4/8/12/. cells FETs JB3 , Precharge FETs . Therefore the charger must supply a voltage equal to B+ on the BATT signal. Note that since


Original
PDF AVR454 ATAVRSB100 ATmega406 18-bit 12-bit ATAVRSB100 SB100) SB100 2598C-AVR-06/06 Q13FC1450000614 avr vr3 AVR453 avr vr6 VR3 avr CONN2 Sim jumper Q13FC145 0-150VDC
2000 - 5.1 home theatre schematic diagram

Abstract: subwoofer 1000 watts amplifier 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12 volts 50 watt subwoofer circuit diagram 5.1 subwoofer ic type amplifier circuit diagram 400 watt subwoofer circuit diagram high subwoofer 1000 watts amplifier 100w audio amplifier circuit diagram class D 400w mono amplifier circuit 12v 50 watt subwoofer circuit diagram
Text: controller IC generates a PWM output by controlling external FETs connected in a full bridge configuration , component of the PWM output prior to driving the speaker. Because the FETs are either fully "on" or fully , controllers can drive a wide range of FETs , too high a drive current can result in increased temperature and , power supply bypass for the FETs . Place adjacent to the FETs or consider lower value ESR solutions , ripple current and should be placed close to the output FETs . The timing capacitor (5% tolerance) sets


Original
PDF ANAN-16 5.1 home theatre schematic diagram subwoofer 1000 watts amplifier 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM 12 volts 50 watt subwoofer circuit diagram 5.1 subwoofer ic type amplifier circuit diagram 400 watt subwoofer circuit diagram high subwoofer 1000 watts amplifier 100w audio amplifier circuit diagram class D 400w mono amplifier circuit 12v 50 watt subwoofer circuit diagram
Supplyframe Tracking Pixel