The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
T2032162201-000 TE Connectivity (T2032162201-000) HDD-108-F 109-216
T2032162101-000 TE Connectivity (T2032162101-000) HDD-108-M 109-216
2157481-1 TE Connectivity (2157481-1) AMPLIMITE IP67, SZ1, 109, 9 POS, RCPT
2157481-5 TE Connectivity (2157481-5) AMPLIMITE IP67, SZ5, 109, 50 POS, RCPT
2157481-2 TE Connectivity (2157481-2) AMPLIMITE IP67, SZ2, 109, 15 POS, RCPT
2157481-4 TE Connectivity (2157481-4) AMPLIMITE IP67, SZ4, 109, 37 POS, RCPT

st zo 109 ma Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TRANSISTOR J 5804 NPN

Abstract:
Text: S-PARAMETER (V ce = 5 V, Ic = 1 mA , Zo = 50 Q) 2SC4885 FREQUENCY MHz 100.00 200.00 300.00 400.00 , -84.6 -88.0 -91.3 -94.9 -98.1 -101.7 -105.3 (V ce = 3 V, Ic = 5 mA , Zo = 50 Q) FREQUENCY MHz 100.00 , 2SC4885 = 3 V, Ic = 3 mA , Zo = 50 Q) Sn MAG .880 .800 .720 .628 .567 .521 .488 .467 .453 .444 .439 , -99.0 -102.2 -105.4 -109.0 (V ce = 3 V, Ic = 1 mA , Zo = 50 Q) FREQUENCY MHz 100.00 200.00 300.00 , -97.8 -101.4 -105.0 -108.6 -112.5 6 NEC S-PARAMETER (V ce 2SC4885 = 1 V, Ic = 3 mA , Zo =


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PDF 2SC4885 SC-70 TRANSISTOR J 5804 NPN nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 tfr 586 nec 2501 Le 629 nec 2501 LD 325 MC 151 transistor CD 1691 CB 567/triac ZO 410 MF
1997 - MF1011B900Y

Abstract:
Text: % Class C f (GHz) VCC (V) PL (W) Gp (dB) C (%) 1.09 CONDITIONS 50 800 6 , ICBO collector cut-off current IE = 0; VCB = 50 V 27 mA ICES collector cut-off current VBE = 0; VCE = 50 V 27 mA IEBO emitter cut-off current IC = 0; VEB = 1.5 V 7 mA V(BR)CBO collector-base breakdown voltage IC = 180 mA 65 V V(BR)CES collector-emitter breakdown voltage IC = 180 mA ; VBE = 0 65 V APPLICATION INFORMATION Microwave


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PDF MF1011B900Y SCA53 127147/00/02/pp12 MF1011B900Y
1997 - MX1011B200Y

Abstract:
Text: f (GHz) tp = 10 µs; = 1% Class C VCC (V) PL (W) Gp (dB) C (%) 1.09 , ICBO collector cut-off current IE = 0; VCB = 50 V 6 mA ICES collector cut-off current VBE = 0; VCE = 50 V 6 mA IEBO emitter cut-off current IC = 0; VEB = 1.5 V 1.5 mA V(BR)CBO collector-base breakdown voltage IC = 40 mA 65 V V(BR)CES collector-emitter breakdown voltage IC = 40 mA ; VBE = 0 65 V APPLICATION INFORMATION Microwave


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PDF MX1011B200Y SCA53 127121/00/02/pp12 MX1011B200Y
Not Available

Abstract:
Text: st C o n d itio n s : Id = 60 m A, Z o = 50 i l f = 0.05 GHz f = 0.5 GHz f = 1.0 GHz Power Gain , Semiconductor Devices.” 2. The recommended operating current range for this device is 40 mA to 70 mA . Typical , 80 mA 550 mW +13 dBm Device Current Power Dissipation2’3 RF Input Power Junction , any of these limits are exceeded. 2. TCASE = 25°C Typical Performance, TA = 25°C, Zo = 50 Q 3 , NOISE FIGURE AND POWER GAIN vs. CASE TEMPERATURE f = 0.5 GHz, ld s 60 mA 18 1/ m T J 1b cT


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PDF MSA-1105
Not Available

Abstract:
Text: Conditions3: Id = 35 mA , Zo = 50 i l Power Gain (IS2 1 1) 2 f - 0.1 GHz AGp Gain Flatness f = , additional information. 2. The recommended operating current range for this device is 20 mA to 50 mA , Temperature 80 mA 425 mW +13 dBm 200°C -65°C to 200°C Part Number Ordering Information Part , ” Parameter ST ? Absolute Maximum Ratings HHPA MSA-0300 MODAMP™ Cascadable Silicon Bipolar , TEMPERATURE CMPNTS blE D f = 1.0 GHz, I d = 35 m A l mA OUTPUT POWER @ 1 dB GAIN


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PDF MSA-0300 MSA-0300
1997 - MRA444

Abstract:
Text: tp = 10 µs; = 1% Class C f (GHz) VCC (V) 1.09 50 PL (W) 650 GP (dB) 6 , PARAMETER CONDITIONS ICBO collector cut-off current VCB = 50 V; IE = 0 20 mA ICES collector cut-off current VCE = 50 V; VBE = 0 20 mA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 5 mA V(BR)CBO collector-base breakdown voltage IC = 140 mA ; VBE = 0 65 V V(BR)CES collector-emitter breakdown voltage IC = 140 mA ; VBE = 0 65 V


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PDF MX1011B700Y SCA53 127147/00/02/pp12 MRA444 MX1011B700Y
2012 - Not Available

Abstract:
Text: 80 TYP ±40 105 MAX UNIT mA dB Ω pF Ω 109 7 33 80 dB 85 dB 95 , 75 85 80 ±48 109 mA 109 7 29 85 Ω pF Ω dB dB 85 dB 95 0.55 , Current RATINGS UNIT 6 V -0.2~VDD+0.2 V ±175 mA 710 SOP-8/MSOP-8 TA ≤ 25 °C SOP-14 1022 , ˆ RATINGS 176 122.6 38.3 26.9 ELECT RI CAL CH ARACT ERI ST I CS (TA 25°C, unless otherwise specified , V nA nA 2.9 2.8 V 2.7 2.5 0.1 0.2 0.3 V 0.5 50 20 40 mA 20 5 of 8


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PDF V2462/V2464 V2462/2464 500uA/op) QW-R105-042
OXF*9

Abstract:
Text: sso ciated G ain at VcE = 2.7 V, Ic = 2 mA vs. T e m p e ra tu re in T e st C irc u it, F ig u re 1 , a t Vce = 2.7 V, Ic = 2 mA vs. T e m p e ra tu re in T e st C ircu it, F ig u re 1. (C irc u it L , Parameters, Common Emitter, Zo = 50 12, 1 V, Ic = 1 mA Freq. GHz 0.5fll 0.9 1.8 2.4 F dB 1 mm r o p t , Parameters, Common Emitter, Zo = 50 £2, 1 V, Ir = 1 mA Freq. GHz 0.5l`l 0.9 1.8 2.4 1'min dB 0.42 0.71 1.37 , Parameters, Common Emitter, Zo = -50 £i, 2.7 V , I(- = 2 mA r Freq. 1 opt GHz 0 . 5 I 1' 0 .9 1 .8 2 .4


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PDF AT-32011 AT-32033 AT-32011: AT-32033: OT-23 OT-143 AT-32033 OT-23, OXF*9
MSA-1110

Abstract:
Text: m e te rs a n d T e st C o n d itio n s : la = 60 m A , Z o = 50 Q U n its M in. T yp , . The recommended operating current range for this device is 40 mA to 75 mA . Typical performance as a , Ratings Typical Performance, Ta = 25°C, Zo = 50 £ 2 (unless otherwise noted) A b s o lu te M a xim u m 1 P a ra m e te r Device Current DEVICE CURRENT vs. VOLTAGE 90 mA 560 mW RF , / l d =75 mA / 4 l d =60mA J * Æ I h =40 mA - — / > E O D u- 4.0 ij|S(0 mA ld


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PDF MSA-1110 MSA-1110
Not Available

Abstract:
Text: = 25°C P a ra m e te rs a n d T e st C on d itio n s3: Id = 35 mA , Zo = 5 o n Sym bol Gp AGp , information. 2 . T he recom m ended operating current range for this device is 2 0 mA to 5 0 mA . Typical , Junction Tem perature Storage Temperature Part Number Ordering Information_ 8 0 mA 4 2 5 mW , TEMPERATURE POWER GAIN V I . CURRENT f s 1.0 GHz, trfs 35 mA OUTPUT P O W ER ® 1 dB GAIN COMPRESSION , u e n c y , GHz Frequency, GHz Typical S catterin g P a ra m e te rs4: Zo s 5 0 Q Freq, S


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PDF MSA-0300 3t0-37l-8717cr310-37t-847S
2004 - Not Available

Abstract:
Text: +2 -3 Unit degC degC degC % V V V V mA V dBm dBm Note 1 2 3 4 Note: 1: 2: 3: 4: Standard , 130 129 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 108 107 106 , Current Monitor Voltage. This (Analog V) output changes at the rate of 20mV/ mA . 155MHz Parallel Byte Clock , , 42, 46, 47, 49, 50, 51, 55, 60, 65, 70, 75, 80, 81, 83, 88, 93, GND GND Ground 98, 103, 106, 109 , 110 , 100 TXD04N 101 TXD02P 102 TXD02N 103 GND 104 TXD00P 105 TXD00N 106 GND 107 PCLKP 108 PCLKN 109 GND 110


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PDF TS-S04D087A SDG1203 OC-48 16x155 52Mbps) 488Gbps 52Mbps
2007 - zo 107

Abstract:
Text: NF. 6.5 AMMC-5618 Typical Performance (Tchuck=25°C, VDD=5V, IDD = 107 mA , Zo =50) 18 0 , Gate Voltage V -5 +1 ID1 Drain Supply Current mA 70 ID2 Drain Supply Current mA 84 Applications Pin RF Input Power dBm 20 · Driver/Buffer in microwave , dB Typical · Single Supply Bias: 5 V @ 107 mA · Phased array radar and transmit amplifiers +165 , Supply Current (V D1= 5V, VG1 = Open or Ground) mA 48 ID2 Second stage Drain Supply Current


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PDF AMMC-5618 AMMC-5618-W10 AMMC-5618-W50 5989-3927EN AV02-0070EN zo 107 amplifier 5.1 surrounding system circuit diagram ablebond 84-1 DS21 AMMC-5618-W50 AMMC-5618-W10 Ablebond 36-2 Ablebond 80X80
2006 - AMMC-5618

Abstract:
Text: -5618 Typical Performance (Tchuck=25°C, VDD=5V, IDD = 107 mA , Zo =50) 18 0 15 -10 -5 9 6 -20 , Gate Voltage V -5 +1 ID1 Drain Supply Current mA 70 ID2 Drain Supply Current mA 84 Applications Pin RF Input Power dBm 20 · Driver/Buffer in microwave , dB Typical · Single Supply Bias: 5 V @ 107 mA · Phased array radar and transmit amplifiers +165 , Supply Current (V D1= 5V, VG1 = Open or Ground) mA 48 ID2 Second stage Drain Supply Current


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PDF AMMC-5618 AMMC-5618-W10 AMMC-5618-W50 5989-3927EN AMMC-5618-W10 AMMC-5618-W50 DS21
2003 - Not Available

Abstract:
Text: -5618 Typical Performance (Tchuck=25°C, VDD=5V, IDD = 107 mA , Zo =50Ω) 18 0 15 -10 9 6 -20 , transmit amplifiers • Single Supply Bias: 5 V @ 107 mA AMMC-5618 Absolute Maximum Ratings [1 , Supply Current mA 70 ID2 Drain Supply Current mA 84 Pin RF Input Power dBm , , VG1 = Open or Ground) mA 48 ID2 Second stage Drain Supply Current (V D2= 5V, VG2 = Open or Ground) mA 59 ID1 + ID2 Total Drain Supply Current (VG1 = VG2 = Open or Ground, VD1


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PDF AMMC-5618 AMMC-5618 AMMC-5618-W10 AMMC-5618-W50 5989-0532EN
2003 - Not Available

Abstract:
Text: @ 107 mA AMMC-5618 Absolute Maximum Ratings [1] Symbol VD1,VD2 VG1 VG2 ID1 ID2 Pin Tch Tb Tstg Tmax , Channel Temp. Operating Backside Temp. Storage Temp. Units V V V mA mA dBm °C °C °C Min. -5 -5 , temperature (Tb) = 25°C Unit V mA mA mA °C/W Min. 3 Typical 5 48 59 107 22 Max. 7 140 AMMC-5618 RF Specifications [3] (Tb = 25°C, VDD= 5 V, IDD = 107 mA , Z0 = 50 .) Symbol |S21|2 |S21|2 RLin RLout , 19.5 20.5 26 -0.023 4.4 6.5 2 AMMC-5618 Typical Performance (Tchuck=25°C, VDD=5V, IDD = 107 mA


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PDF AMMC-5618 AMMC-5618-W10 AMMC-5618-W50 5989-0532EN 5989-3210EN
2003 - max7140

Abstract:
Text: @ 107 mA Applications · Driver/Buffer in microwave communication systems · Cascadable gain stage , Channel Temp. Operating Backside Temp. Storage Temp. Units V V V mA mA dBm °C °C °C Min. -5 -5 , temperature (Tb) = 25°C Unit V mA mA mA °C/W Min. 3 Typical 5 48 59 107 22 Max. 7 140 AMMC-5618 RF Specifications [3] (Tb = 25°C, VDD= 5 V, IDD = 107 mA , Z0 = 50 .) Symbol |S21|2 |S21|2 RLin RLout , 19.5 20.5 26 -0.023 4.4 6.5 2 AMMC-5618 Typical Performance (Tchuck=25°C, VDD=5V, IDD = 107 mA


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PDF AMMC-5618 AMMC-5618-W10 AMMC-5618-W50 5989-3210EN 5989-3927EN max7140
2003 - AMMC-5618

Abstract:
Text: 107 mA , Zo =50) 18 0 15 -10 9 6 -20 INPUT RL (dB) ISOLATION (dB) -5 12 GAIN , Single Supply Bias: 5 V @ 107 mA AMMC-5618 Absolute Maximum Ratings [1] Symbol Parameters/Conditions , +1 VG2 Optional Gate Voltage V -5 +1 ID1 Drain Supply Current mA 70 ID2 Drain Supply Current mA 84 Pin RF Input Power dBm 20 Tch Channel Temp. °C , ) mA 48 ID2 Second stage Drain Supply Current (V D2= 5V, VG2 = Open or Ground) mA 59


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PDF AMMC-5618 AMMC-5618 AMMC-5618-W10 AMMC-5618-W50 5989-0532EN AMMC-5618-W10 AMMC-5618-W50
Not Available

Abstract:
Text: V l H €ž , typ 109 H u. Ao, Aia, Aia input - All other input - max - 76 310 Unit mA M 250 M 153 A s fu r o th e r ite m s , re fe r to th e "C o , X L L L L E.* Ëbï X H L L L L A ,. Aib Ao. Act Zo . Zo * L X , b=L) Z 2. Z i. Zo . Zîb Zob Zib H H H H H H H L H H H L H H L H H H 0 , L L L L Zo L L H L L L L L L L 72 L L L L H L L L L L Z3 L L L L


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PDF 100170F
st zo 109 ma

Abstract:
Text: Frequency, GHz Typical Scattering Parameters: Zo = 50 Q Ta = 25°C, Id = 50 mA Sii S 21 Sl2 , mm .xx = ± .13 rr st .022 .56 .455 ± 030 .006 ±.002 .15 ± .05 Typical Biasing Configuration o OUT Symbol Parameters and Test Conditions: Id = 50 m A, Zo = 50 Q Units Min. Typ- Max. Gp Power , range for this device Is 30 mA to 70 mA . Typical performance as a function of current is on the , Dissipation2 3 RF Input Power Junction Temperature Storage Temperature4 100 mA 650 mW +20 dBm 200°C â


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PDF MSA-0435 MSA-0435 st zo 109 ma AVANTEK MSA 0435 Avantek amplifier avantek military
Not Available

Abstract:
Text: and T e st C onditions Power at 1 dB Gain Compression (opt tuning) VC E = 2.7 V, Ic = 20 mA f= 0.9 GHz , -104 AT-32011 Typical N oise Parameters, Common Emitter, Zo = 50 ii, 1 V, Ic = 1 mA F req. GHz , -32033 Typical N oise Parameters, Common Emitter, Zo = 50 Q, 1 V, Ic = 1 mA F req . GHz 0.5H] 0.9 1.8 2.4 ^min , -32011 Typical N oise Param eters, Common Emitter, Zo = 50 Q, 2.7 V, Ic = 2 mA Freq. GHz 0.5t1 ] 0.9 1.8 2.4 , Scattering Parameters, Common Emitter, Zo = 50 Q Vce = 2.7V, Ic = 2 mA Freq. GHz 0.1 0.5 0.9 1.0 1.5 1.8 2.0


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PDF AT-32011 AT-32033 AT-32011: AT-32033: OT-23 OT-143 AT-32033 OT-23,
2003 - MC2044CB16

Abstract:
Text: present, is provided by externally connecting the ST output to the JAM input. SDH/SONET/ATM Fast , Package 7 10 ST 8 9 ST 13 MC2044C Date Code 5 12 VSET CCE D OUT D OUT , ring SOIC16 QSOP16 TSSOP20 BCC+16L BCC16 evaluation board QSOP evaluation board ST NC , MC2044CB16 MC2044C-BEVM MC2044C-EVM ST NC ORDERING I NFORMATION D OUT 5 T ABLE 1 V CCE , VSET JAM ST ST GNDE GNDE 9 NC 5 V SET V CCE VSET 3 CF 14 2


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PDF MC2044C 02044-DSH-001-B MC2044CB16 tsop20 MC2044CS16 MC2044CWAFERSPBG MC2044CWPDIE MC2044CQ16 QSOP16 SOIC16 TSOP-20 MS-012 soic16
IP3 MARK

Abstract:
Text: 7 ] IN M A X 2 6 3 2 st o ¡7 M A X I A H M A X 2 6 3 3 3 IN GND [7 GND ¡7 ¡7 5 , .5dBm OUT Current.± 12 mA IN to GND , ma fiN = 800MHz to 1000MHz Rbias = 40kn Vcc = 3V, Ta = +25°C 5.5 4.2 5.2 15 6.5 6.5 6.5 , , Ta = +25°C mA Shutdown Supply Current SHDN Input Low Voltage SHDN Input High Voltage Rbias = , VSHDN= Vcc V5hDN = GND soon V V mA Note 1: Guaranteed by design and characterization. 10-64


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PDF MAX2630/MAX2631/MAX2632/MAX2633 900MHz. MAX2630/MAX2631 MAX2632/MAX2633 MAX263 MAX2631 X2630-M X2633 IP3 MARK aabl
1997 - LBE2003S

Abstract:
Text: parameters LBE2009S; LCE2009S: VCE = 18 V; IC = 110 mA (VCE and IC regulated); Tmb = 25 °C; Zo = 50 , ( mA ) PL1 (mW) Gpo (dB) Zi () ZL () LBE2003S Class-A (CW) linear 2 18 30 , collector current (DC) LBE2003S - 90 mA LBE2009S; LCE2009S - 250 mA LBE2003S - , handbook, halfpage MGD989 2 handbook, halfpage Ptot (W) IC ( mA ) 1.5 (2) (1) (3 , tot (W) IC ( mA ) 3 (3) 102 2 (1) (2) 10 1 1 10 20 40 VCE (V) 0


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PDF LBE2003S; LBE2009S; LCE2009S LBE2003S LBE2009S OT441A LCE2009S SC15
1998 - power transistors table

Abstract:
Text: parameters LBE2003S: VCE = 18 V; IC = 30 mA (VCE and IC regulated); Tmb = 25 °C; Zo = 50 ; typical values , ; LBE2009S Scattering parameters LBE2009S: VCE = 18 V; IC = 110 mA (VCE and IC regulated); Tmb = 25 °C; Zo , ( mA ) PL1 (mW) Gpo (dB) Zi () ZL () LBE2003S Class-A (CW) linear 2 18 30 , mA LBE2009S - 250 mA LBE2003S - 1.4 W LBE2009S - 3.5 W -65 , ) IC ( mA ) 1.5 (2) (1) (3) 10 1 0.5 1 10 15 20 30 40 60 0


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PDF LBE2003S; LBE2009S LBE2003S LBE2009S SCA57 125108/00/03/pp16 power transistors table
5964-4069E

Abstract:
Text: * = 10 mA , (unless otherwise noted). Sym bol NF G 8m Ids» V p 1096 BVqdo P aram eters and T e st C , = 15 mA F req . R b/ Zo G, Topt dB Mag. Ang. GHz dB 28 0.38 0.49 18.87 0.84 2 0.31 17.20 0.74 42 3 0.54 , ain: II dB Topical at 12 GHz 17 dB Typical at 4 GHz · Low C o st S urface M ount Sm all P la stic , nits V V V mA mW dBm °C °C A bsolute M aximum +3 -3 -3.5 Idss 180 + 10 150 -65 to 150 T herm al R , Breakdown Voltage Iq = 30 pA U nits dB dB inS mA V V M in. 9 50 15 -1.0 Typ. 1.2 10 60 25 -0.35 M ax. 1.41*1


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PDF ATF-36163 OT-363 Oj004 a079t0j0Q2 5964-4069E 4747E 5964-4069E saa 1094 ATF pHEMT MARKING VD9 saa 1059 saa 1074 SAA 1085 SAA 1251
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