The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
CUZ30V CUZ30V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC
CUZ20V CUZ20V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC
CEZ6V2 CEZ6V2 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC
CUZ6V8 CUZ6V8 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC
CUZ12V CUZ12V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC
MUZ5V6 MUZ5V6 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM

st c632 Zener diode Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - diode zener ZL 7

Abstract: BTS432F BTS542D BTS 640S2 S BTS432E 409L1 diode zener ZL 7.5 BTS542 BTS 542D BTS432D2
Text: ), the current flowing through the internal zener diode of the PROFET must be limited by an external , clamped by ZD1 to, say, -40V. A lamp or other types of load in place of zener diode ZD1 can be used to , internal ( zener ) diode in the PROFET is limited by the internal resistance Rbb, the freewheeling current , PROFETs (see table page 7 - 6) require an external zener diode with low forward voltage drop to be , V bb0 Fig. 7.12: PROFET with `low drop' zener diode Semiconductor Group ZD PROFET


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PDF 409L1 410x2 412B2 432x2 442x2 426L1 726L1 734L1 611L1 612N1 diode zener ZL 7 BTS432F BTS542D BTS 640S2 S BTS432E 409L1 diode zener ZL 7.5 BTS542 BTS 542D BTS432D2
bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Text: 1N5232 1N5233 1N5234 1N5235 1N5236 1N5237 1N5238 1N5239 1N5240 1N5241 1N5242 1N5243 Type Diode Diode Diode TC Zener TC Zener TC Zener TC Zener TC Zener TC Zener TC Zener TC Zener TC Zener TC Zener TC Zener TC Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener , Diode Schottky Schottky Schottky JFET JFET JFET JFET JFET Transistor Transistor Zener Array Schottky , 1N5257 1N5711 2N918 2N2221 2N2221A Type Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener


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PDF 1N914 1N4148 1N4150 1N4565 1N4565A 1N4566 1N4566A 1N4570 1N4570A 1N4571 bc 7-25 pnp transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Text: 1N5249 1N5250 1N5251 1N5252 1N5253 1N5254 1N5255 1N5256 1N5257 1N5711 Diode Diode Diode Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Zener Schottky TMPD914 TMPD4148 TMPD4150 , Channel N Channel C C C C G S S G S S S S S S S S B B B B St G G D D D D D D D D D D D D St , BCW33 BCW60A Schottky Schottky Diode Diode Diode Dual Diode Dual Diode Dual Diode Dual Diode N


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PDF 1N914 1N4148 1N4150 1N5229 1N5230 1N5231 1N5232 1N5233 1N5234 1N5235 bc 7-25 pnp transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
2006 - W15NK90Z

Abstract: STW15NK90Z JESD97 STW11NK100Z W15NK90Z equivalent
Text: Table 4. Symbol BVGSO 1.1 STW15NK90Z Gate-source zener diode Parameter Test conditions , STW11NK100Z STW15NK90Z N-channel 900V - 0.40 - 15A - TO-247 Zener - Protected SuperMESHTM , -247 Description The SuperMESHTM series is obtained through an extreme optimization of ST 's well established , complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products. Internal , gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . .


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PDF STW11NK100Z STW15NK90Z O-247 W15NK90Z STW15NK90Z JESD97 STW11NK100Z W15NK90Z equivalent
2006 - F5NK90Z

Abstract: JESD97 P5NK90Z STF5NK90Z STP5NK90Z MOSFET 900V TO-220
Text: 3/15 Electrical ratings Table 4. STP5NK90Z - STF5NK90Z Gate-source zener diode , STP5NK90Z STF5NK90Z N-channel 900V - 2 - 4.5A - TO-220/TO-220FP Zener - Protected SuperMESHTM , Internal schematic diagram The SuperMESHTM series is obtained through an extreme optimization of ST , applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM , gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . .


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PDF STP5NK90Z STF5NK90Z O-220/TO-220FP O-220 F5NK90Z JESD97 P5NK90Z STF5NK90Z STP5NK90Z MOSFET 900V TO-220
2006 - F8NK85Z

Abstract: P8NK85Z f8nk8 JESD97 STF8NK85Z STP8NK85Z F8NK85 p8nk p8nk8
Text: ratings Table 4. Symbol BVGSO 1.1 STP8NK85Z - STF8NK85Z Gate-source zener diode Parameter , STP8NK85Z STF8NK85Z N-channel 850V - 1.1 - 6.7A - TO-220 /TO-220FP Zener - protected SuperMESHTM , obtained through an extreme optimization of ST 's well established strip-based PowerMESHTM layout. In , capability for the most demanding applications. Such series complements ST full range of high voltage , features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 Electrical characteristics


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PDF STP8NK85Z STF8NK85Z O-220 /TO-220FP O-220 O-220FP F8NK85Z P8NK85Z f8nk8 JESD97 STF8NK85Z STP8NK85Z F8NK85 p8nk p8nk8
2006 - w12nk95z

Abstract: STW12NK95Z W12nk B2 marking code Zener JESD97 STW11NK100Z
Text: STW12NK95Z Gate-source zener diode Parameter Test conditions Gate-source breakdown voltage Igs , STW11NK100Z STW12NK95Z N-channel 950V - 0.69 - 10A - TO-247 Zener - Protected SuperMESHTM , ST 's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance , Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 Electrical , °C VESD (G-S) dv/dt (2) TJ Tstg Peak diode recovery voltage slope Operating junction


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PDF STW11NK100Z STW12NK95Z O-247 w12nk95z STW12NK95Z W12nk B2 marking code Zener JESD97 STW11NK100Z
2006 - JESD97

Abstract: STW11NK100Z STW13NK100Z W13NK100Z zener diode - C 10 ST ST W13NK100Z
Text: Electrical ratings Table 4. Symbol BVGSO 1.1 STW13NK100Z Gate-source zener diode Parameter , STW11NK100Z STW13NK100Z N-channel 1000V - 0.56 - 13A - TO-247 Zener - Protected SuperMESHTM , -247 Description The SuperMESHTM series is obtained through an extreme optimization of ST 's well established , complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products. Internal , gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . .


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PDF STW11NK100Z STW13NK100Z O-247 JESD97 STW11NK100Z STW13NK100Z W13NK100Z zener diode - C 10 ST ST W13NK100Z
2006 - P5NK90Z

Abstract: F5NK90Z JESD97 STF5NK90Z STP5NK90Z
Text: Gate-source zener diode Parameter Gate-Source breakdown voltage Test conditions Igs=±1mA (Open drain , STP5NK90Z STF5NK90Z N-channel 900V - 2 - 4.5A - TO-220/TO-220FP Zener - Protected SuperMESHTM , series is obtained through an extreme optimization of ST 's well established stripbased PowerMESHTM , good dv/dt capability for the most demanding applications. Such series complements ST full range of , gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . .


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PDF STP5NK90Z STF5NK90Z O-220/TO-220FP O-220 O-220FP P5NK90Z F5NK90Z JESD97 STF5NK90Z STP5NK90Z
2006 - JESD97

Abstract: STP1N120 P1N120
Text: Gate-source zener diode Parameter Test conditions BVGSO (1) Gate-source breakdown voltage Igs ± 1mA , STP1N120 N-channel 1200V - 30 - 500mA - TO-220 Zener - protected SuperMESHTM Power MOSFET , -220 Description The SuperMESHTM series is obtained through an extreme optimization of ST 's well established , complements ST full range of high voltage Power MOSFETs including revolutionary MDmeshTM products , ) Derating factor PTOT dv/dt (2) Tj Tstg Total dissipation at TC = 25°C Peak diode recovery voltage


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PDF STP1N120 500mA O-220 500mA JESD97 STP1N120 P1N120
2006 - F8NK85Z

Abstract: STP8NK85Z JESD97 STF8NK85Z P8NK85Z
Text: zener diode Symbol BVGSO 1.1 Parameter Test conditions Min. Gate-source breakdown , STP8NK85Z STF8NK85Z N-channel 850V - 1.1 - 6.7A - TO-220 /TO-220FP Zener - protected SuperMESHTM , optimization of ST 's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance , applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM , gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . .


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PDF STP8NK85Z STF8NK85Z O-220 /TO-220FP O-220 F8NK85Z STP8NK85Z JESD97 STF8NK85Z P8NK85Z
1996 - fire alarm using zener

Abstract: ED-SERIES manchester encoder remote control encoder decoder ED15 ET15P ET15WG generation circuit of manchester ET15 D3318
Text: of valid reception in high-noise environments. s Zener diode to regulate the power supply s , ET15 contains an on-chip zener diode to clamp the power supply to around 6.7 volts. The circuit will , the on-chip zener diode , a current limiting resistor of 1K ohm or greater is required. If pull-up , Temperature Zener Current 15-24 6.4V -40°C to +85°C -55°C to +150°C 100mA ET15 Electrical , 0.1 2.0 µA VIN = 5.0V for ST ILC Input Load Current 6.0 20.0 µA VIN = 5.0V


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PDF 20-Pin ET15P ET15WG 100pF 250pF 500pF 1000pF 5000pF 000pF fire alarm using zener ED-SERIES manchester encoder remote control encoder decoder ED15 ET15P ET15WG generation circuit of manchester ET15 D3318
2006 - Not Available

Abstract: No abstract text available
Text: . Symbol BVGSO 1.1 STW13NK100Z Gate-source zener diode Parameter Test conditions , STW11NK100Z STW13NK100Z N-channel 1000V - 0.56Ω - 13A - TO-247 Zener - Protected SuperMESHâ , applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshâ , Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 Electrical , Gate source ESD(HBM-C=100pF, R=1,5KΩ) Peak diode recovery voltage slope Operating junction


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PDF STW11NK100Z STW13NK100Z O-247
2006 - Not Available

Abstract: No abstract text available
Text: STW15NK90Z Gate-source zener diode Parameter Test conditions Gate-source breakdown voltage Igs= , STW11NK100Z STW15NK90Z N-channel 900V - 0.40Ω - 15A - TO-247 Zener - Protected SuperMESHâ , applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshâ , Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 Electrical , ) dv/dt(2) TJ Tstg Peak diode recovery voltage slope Operating junction temperature Storage


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PDF STW11NK100Z STW15NK90Z O-247
2006 - Not Available

Abstract: No abstract text available
Text: . Symbol BVGSO 1.1 STW12NK95Z Gate-source zener diode Parameter Test conditions , STW11NK100Z STW12NK95Z N-channel 950V - 0.69Ω - 10A - TO-247 Zener - Protected SuperMESHâ , Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 Electrical , 150 °C VESD (G-S) dv/dt(2) TJ Tstg Peak diode recovery voltage slope Operating junction , features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been


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PDF STW11NK100Z STW12NK95Z O-247
2007 - 5n120

Abstract: diode zener 22A STP5N120 JESD97
Text: . Symbol Gate-source zener diode Parameter Test conditions BVGSO (1) Gate-source breakdown , STP5N120 N-channel 1200V - 2.8 - 4.4A - TO-220 Zener - protected SuperMESHTM Power MOSFET TARGET , SuperMESHTM series is obtained through an extreme optimization of ST 's well established strip-based , a very good dv/dt capability for the most demanding applications. Such series complements ST full , 100pF, R= 1.5K) 3000 V dv/dt (2) Peak diode recovery voltage slope 4.5 V/ns -55 to


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PDF STP5N120 O-220 5n120 diode zener 22A STP5N120 JESD97
2013 - zener diode - C 10 ST

Abstract: zener diode datasheet- C 10 ST
Text: . Pulsed: pulse duration= 300 μs, duty cycle 1.5%. Table 9. Gate - source Zener diode Symbol BVGSO(1 , fast diode ) in D²PAK Datasheet - production data Features TAB Order code VDS RDS(on) max , recovery diode Applications • Switching applications • Fast internal recovery diode G(1 , . It associates all advantages of reduced on-resistance, Zener gate protection and very high dv/dt capability with a fast body-drain recovery diode . Such series complements the “FDmesh™” advanced


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PDF STB9NK60ZD STB9NK60ZDT4 AM16813v1 DocID9573 zener diode - C 10 ST zener diode datasheet- C 10 ST
Not Available

Abstract: No abstract text available
Text: each diode : 1. T he stab ility te st voltage readings. 2. T he voltage d rif t as referen ced to "Zero , diode 's stability is fully utilized in the circuit. If the c u rre n t through the zener is not , can be a ttrib u te d to the diode 's inherent stability. 11.7 VOLT ULTRA-STABLE (T.C.) ZENER , ltra -S ta b le R eference Diodes offers a C E R T IF IE D R E F E R E N C E VOLTAGE ST A B IL IT Y as , and re liab le m easu rem en ts a re to be m ade, the M icrosem i "U ltra -S ta b le " diode excels as


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PDF 94I-6300 USR1171 400mW
2007 - F13NK50Z

Abstract: STP13NK50Z F13NK50 P13NK50Z STW13NK50Z STF13NK50Z p13nk50 W13NK50Z B2 marking code Zener JESD97
Text: . Gate-source zener diode Symbol BVGSO 1.1 Parameter Gate-source breakdown voltage Test conditions , The SuperMESHTM series is obtained through an extreme optimization of ST 's well established , complements ST full range of high voltage MOSFETs. Applications Switching application Table 1 , . . . . . . . 3 1.1 2 Protection features of gate-to-source zener diodes . . . . . . . . . . , 1.12 0.24 W/°C dv/dt(3) Peak diode recovery voltage slope VISO Insulation withstand


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PDF STF13NK50Z STP13NK50Z STW13NK50Z O-220/TO-220FP/TO-247 STP13NK50Z O-220 O-220FP O-247 F13NK50Z F13NK50 P13NK50Z STW13NK50Z STF13NK50Z p13nk50 W13NK50Z B2 marking code Zener JESD97
2006 - Not Available

Abstract: No abstract text available
Text: through an extreme optimization of ST 's well established strip-based PowerMESHTM layout. In addition to , the most demanding applications. Such series complements ST full range of high voltage MOSFETs , 2.2 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 5 , ESD(HBM-C=100pF, R=1.5KW) Peak diode recovery voltage slope Insulation withstand voltage (AC-RMS , diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 28 A, VGS =


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PDF STE30NK90Z
2006 - e40nk90

Abstract: STE40NK90ZD JESD97 E40NK
Text: Table 7. Symbol BVGSO 2.1 Gate-source zener diode Parameter Test conditions Gate-source , of ST 's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance , applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM , Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 5 2.2 Electrical , ) Gate source ESD(HBM-C=100pF, R=1.5K) dv/dt (2) Peak diode recovery voltage slope VISO


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PDF STE40NK90ZD e40nk90 STE40NK90ZD JESD97 E40NK
2006 - P8NK80ZFP

Abstract: w8nk80z zener diode 3.0 b2 P8NK80 4.7 B2 zener B2 marking code Zener ZENER DIODE zener diode 15v STP7NK80ZFP stp8nk
Text: Table 4. Symbol BVGSO 1.1 Gate-source zener diode Parameter Test conditions Gate-source , obtained through an extreme optimization of ST 's well established strip-based PowerMESHTM layout. In , capability for the most demanding applications. Such series complements ST full range of high voltage , 1.1 2 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 , ESD(HBM-C=100pF, R=1.5K) dv/dt (3) 4000 V 4.5 V/ns Peak diode recovery voltage


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PDF STP8NK80Z STP8NK80ZFP STW8NK80Z O-220 /TO-220FP/TO-247 STP8NK80Z O-220FP O-220 P8NK80ZFP w8nk80z zener diode 3.0 b2 P8NK80 4.7 B2 zener B2 marking code Zener ZENER DIODE zener diode 15v STP7NK80ZFP stp8nk
2006 - VIPer 32

Abstract: Viper20 application JAN 1N4005 VIPER IC 1N4005 1N4007 AN1317 AN1489 BC547B STTA106
Text: the primary regulation. The control circuit consists in an npn transistor Q1, a Zener diode Dz, a , operation of the power supply a Zener diode , Dzo, is connected across the output in order to allow voltage , Diode 1N4005 DZ DZ0 13V Zener L 2.1mH Inductor Lf uc d 9.1V Zener 470µH , transistor and a 10V Zener diode . let o bs O Table 3. Buck-boost converter specifications , Diode 1N4005 DZ 10V Zener DZ1 13V Zener L 2.1mH Inductor Lf 470µHInductor Q1


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PDF AN1489 VIPer20 VIPer20, VIPer 32 Viper20 application JAN 1N4005 VIPER IC 1N4005 1N4007 AN1317 AN1489 BC547B STTA106
2006 - E30NK90Z

Abstract: JESD97 STE30NK90Z
Text: 2.1 Gate-source zener diode Parameter Test conditions Gate-source breakdown Igs=± 1mA (Open , Description The SuperFREDMeshTM series is obtained through an extreme optimization of ST 's well established , complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products. Internal , gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 5 2.2 Electrical characteristics (curves , Derating Factor 4.3 W/°C Gate source ESD(HBM-C=100pF, R=1.5KW) 6.5 KV Peak diode recovery


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PDF STE30NK90Z E30NK90Z JESD97 STE30NK90Z
2006 - W18NK80Z

Abstract: w18nk80 mosfet w18nk80z STW18NK80Z JESD97 w18nk 920 diode zener
Text: Table 4. Symbol BVGSO Gate-source zener diode Parameter Gate-source breakdown voltage Test , SuperMESHTM series is obtained through an extreme optimization of ST 's well established strip-based , a very good dv/dt capability for the most demanding applications. Such series complements ST full , . . . . . . . . . . . . . 3 1.1 2 Protection features of gate-to-source zener diodes . . . . , =100pF, R=1.5K) Peak diode recovery voltage slope Storage temperature Max. operating junction temperature


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PDF STW18NK80Z O-247 W18NK80Z w18nk80 mosfet w18nk80z STW18NK80Z JESD97 w18nk 920 diode zener
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