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Part Manufacturer Description Datasheet Download Buy Part
103869-000 TE Connectivity (103869-000) HVCE-331/311-11(B3)
8-1601046-1 TE Connectivity (8-1601046-1) 331-101-000=WIRE2WIRE,STD,SMZ
1-1589692-8 TE Connectivity (1-1589692-8) QCM019PC3DMC150B = Circular
2221760-6 TE Connectivity (2221760-6) AMPLIMITE IP67, SZ6, 90, 104 POS, RCPT
2157481-2 TE Connectivity (2157481-2) AMPLIMITE IP67, SZ2, 109, 15 POS, RCPT

ss8050 d 331 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - Not Available

Abstract: No abstract text available
Text: SS8050 NPN Epitaxial Silicon Transistor Features • • • • 2W Output Amplifier of , 100 MHz hFE Classification Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300 © 2010 Fairchild Semiconductor Corporation SS8050 Rev. B3 www.fairchildsemi.com 1 SS8050 — NPN Epitaxial Silicon Transistor July 2010 1000 0.5 VCE = 1V IC[A], COLLECTOR , Fairchild Semiconductor Corporation SS8050 Rev. B3 0.2 www.fairchildsemi.com 2 SS8050 — NPN


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PDF SS8050 SS8550
2010 - 2ss8050

Abstract: SS8050 transistor ss8050 SS8050 equivalent ss8550 102 TRANSISTOR
Text: SS8050 NPN Epitaxial Silicon Transistor Features · · · · 2W Output Amplifier of Portable , 100 MHz hFE Classification Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300 © 2010 Fairchild Semiconductor Corporation SS8050 Rev. B3 www.fairchildsemi.com 1 SS8050 - NPN Epitaxial Silicon Transistor July 2010 1000 0.5 0.4 hFE, DC CURRENT GAIN , . Current Gain Bandwidth Product © 2010 Fairchild Semiconductor Corporation SS8050 Rev. B3 0.4 VBE


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PDF SS8050 SS8550 2ss8050 SS8050 transistor ss8050 SS8050 equivalent ss8550 102 TRANSISTOR
2000 - ss8550 TRANSISTOR equivalent

Abstract: ss8050 equivalent SS8050 application notes SS8050 ss8050 transistor transistor ss8050 transistor SS8550 SS8550 SS8550 transistor
Text: SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. · Complimentary to SS8550 · Collector Current: IC=1.5A · Collector Dissipation: PC=2W (TC=25°C) TO-92 1 1 , MHz 100 V hFE Classification Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300 ©2000 Fairchild Semiconductor International Rev. A, February 2000 SS8050 , Gain Bandwidth Product Rev. A, February 2000 SS8050 Package Demensions TO-92 +0.25


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PDF SS8050 SS8550 ss8550 TRANSISTOR equivalent ss8050 equivalent SS8050 application notes SS8050 ss8050 transistor transistor ss8050 transistor SS8550 SS8550 SS8550 transistor
2001 - SS8050 application notes

Abstract: SS8050 cross reference transistor NPN TO-92 2W transistor TO-92 SS8050 1.5A NPN power transistor TO-92 SS8050 SS8550 cross reference SS8050DTA SS8050BBU SS8050DBU
Text: SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. · , hFE2 B 85 ~ 160 C 120 ~ 200 D 160 ~ 300 ©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 SS8050 Typical Characteristics 0.5 1000 VCE = 1V IC[mA], COLLECTOR CURRENT , Corporation Rev. A1, July 2001 SS8050 Package Demensions TO-92 4.58 ­0.15 +0.25 0.46 , Production ©2001 Fairchild Semiconductor Corporation Rev. H3 Product Folder - Fairchild P/N SS8050


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PDF SS8050 SS8550 SS8050 SS8050DCHBU SS8050 application notes SS8050 cross reference transistor NPN TO-92 2W transistor TO-92 SS8050 1.5A NPN power transistor TO-92 SS8550 cross reference SS8050DTA SS8050BBU SS8050DBU
2001 - SS8050

Abstract: ss8050 2w equivalent ss8050 equivalent ss8050 TRANSISTOR equivalent SS8550
Text: SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. · Complimentary to SS8550 · Collector Current: IC=1.5A · Collector Power Dissipation: PC=2W (TC=25°C) TO , =10V, IC=50mA 190 MHz 100 V hFE Classification Classification B C D hFE2 85 , SS8050 Typical Characteristics 1000 0.5 0.4 hFE, DC CURRENT GAIN IC[mA], COLLECTOR , Gain Bandwidth Product Rev. A1, July 2001 SS8050 Package Demensions TO-92 +0.25 4.58


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PDF SS8050 SS8550 SS8050 ss8050 2w equivalent ss8050 equivalent ss8050 TRANSISTOR equivalent SS8550
2004 - S8050

Abstract: ss8550 SS8050 SS8550 transistor
Text: SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. · Complimentary to SS8550 · Collector Current: IC=1.5A · Collector Power Dissipation: PC=2W (TC=25°C) TO , Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300 ©2004 Fairchild Semiconductor Corporation Rev. B2, August 2004 SS8050 Typical Characteristics 0.5 1000 0.4 hFE, DC , CURRENT Figure 6. Current Gain Bandwidth Product Rev. B2, August 2004 SS8050 Package


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PDF SS8050 SS8550 S8050 ss8550 SS8050 SS8550 transistor
2002 - SS8050

Abstract: ss8050 2w equivalent SS8550 transistor SS8550 SS8550 transistor
Text: SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. · Complimentary to SS8550 · Collector Current: IC=1.5A · Collector Power Dissipation: PC=2W (TC=25°C) TO , =10V, IC=50mA 190 MHz 100 V hFE Classification Classification B C D hFE2 85 , SS8050 Typical Characteristics 1000 0.5 0.4 hFE, DC CURRENT GAIN IC[mA], COLLECTOR , Gain Bandwidth Product Rev. A2, November 2002 SS8050 Package Dimensions TO-92 +0.25


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PDF SS8050 SS8550 SS8050 ss8050 2w equivalent SS8550 transistor SS8550 SS8550 transistor
2002 - Not Available

Abstract: No abstract text available
Text: !"# SS8050 · · · · · · Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts , storage junction temperature range: -55OC to +150 OC Marking : SS8050 NPN Silicon Transistors TO-92 A , Units Vdc Vdc Vdc uAdc uAdc uAdc D E B OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO , -Vdc Vdc Vdc DIM A B C D E G INCHES MIN .170 .170 .550 .010 .130 .010 G DIMENSIONS MM MIN 4.33 4.30 13.97 0.36 3.30 2.44 SMALL-SIGNAL CHARACTERISTICS fT 190 -MHz CLASSIFICATION OF HFE (1) D


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PDF SS8050 -55OC 100uAdc,
2007 - ss8050 equivalent

Abstract: SS8050D SS8050C NPN transistor ss8050d 800ma ss8050 transistor transistor ss8050d 1.5A NPN power transistor TO-92 Transistor TO-92 SS8050D
Text: MCC TM Micro Commercial Components SS8050 SS8050-C SS8050-D omponents 20736 Marilla , Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking : SS8050 Case , (VEB =5.0Vdc, IC=0) C D ON CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VEB DC , DIMENSIONS DIM A B C D E G INCHES MIN .170 .170 .550 .010 .130 .010 MAX .190 .190 , 3.96 2.64 NOTE D 160-300 www.mccsemi.com 1 of 2 Revision: 5 2007/03/02 MCC TM


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PDF SS8050 SS8050-C SS8050-D -55OC ss8050 equivalent SS8050D SS8050C NPN transistor ss8050d 800ma ss8050 transistor transistor ss8050d 1.5A NPN power transistor TO-92 Transistor TO-92 SS8050D
1999 - transistor TO-92 SS8050

Abstract: No abstract text available
Text: SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. · Complimentary to SS8550 · Collector Current: IC=1.5A · Collector Dissipation: PC=2W (TC=25°C) TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Base Voltage , hFE(2) CLASSIFICATION Classification hFE(2) B 85-160 C 120-200 D 160-300 Rev. B ©1999 Fairchild Semiconductor Corporation SS8050 NPN EPITAXIAL SILICON TRANSISTOR TRADEMARKS The following are


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PDF SS8050 SS8550 transistor TO-92 SS8050
2007 - SS8050D

Abstract: SS8050C 1.5A NPN power transistor TO-92
Text: !"# SS8050 SS8050-C SS8050-D Features · · · · · · · · TO-92 Plastic-Encapsulate Transistors , Operating and storage junction temperature range: -55OC to +150 OC Marking : SS8050 Lead Free Finish/RoHS , uAdc D ON CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VEB 85 40 -400 -0.5 1.2 1.6 -Vdc Vdc Vdc DIM A B C D E G INCHES MIN .170 .170 .550 .010 .130 .010 G DIMENSIONS MM MIN 4.33 4.30 13.97 0.36 3.30 2.44 SMALL-SIGNAL CHARACTERISTICS fT 190 -MHz CLASSIFICATION OF HFE (1) D


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PDF SS8050 SS8050-C SS8050-D -55OC 100uA SS8050D SS8050C 1.5A NPN power transistor TO-92
transistor TO-92 SS8050

Abstract: No abstract text available
Text: SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B , cb=10V, Ie=0 f=1MHz VCE=10V, lc=50mA D O II Min 40 25 6 Typ Max Unit V V V nA nA 100 , (sat) V be (sat) V be C ob fr V V V pF MHz < E o o D O < E o o m 100 Iif e ( 2 ) CLASSIFICATION B 85-160 C 120-200 D 160-300 C lassification hFE(2) FA IR CH ILD SEMICONDUCTOR t m ©1999 Fairchild Semiconductor Corporation SS8050 STATIC CHARACTERISTIC NPN EPITAXIAL SILICON TRANSISTOR


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PDF SS8050 SS8550 transistor TO-92 SS8050
2007 - SS8050D

Abstract: transistor SS8050D SS8050C
Text: !"# SS8050 SS8050-C SS8050-D Features · · · · · · · · TO-92 Plastic-Encapsulate Transistors , Operating and storage junction temperature range: -55OC to +150 OC Marking : SS8050 Lead Free Finish/RoHS , uAdc D ON CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VEB 85 40 -400 -0.5 1.2 1.6 -Vdc Vdc Vdc DIM A B C D E G INCHES MIN .170 .170 .550 .010 .130 .096 G DIMENSIONS MM MIN 4.33 4.30 13.97 0.36 3.30 2.44 SMALL-SIGNAL CHARACTERISTICS fT 190 -MHz CLASSIFICATION OF HFE (1) D


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PDF SS8050 SS8050-C SS8050-D -55OC 100uArovements SS8050D transistor SS8050D SS8050C
2001 - SS8550 cross reference

Abstract: ss8550 TRANSISTOR SS8550 cross reference ss8550 transistor SS8550 transistor TO-92 SS8050 SS8050 application notes
Text: SS8550 SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. · Complimentary to SS8050 · Collector Current: IC=1.5A · Collector Power Dissipation: PC=2W (TC=25°C) 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta , Bandwidth Product hFEClassification Classification hFE2 B 85 ~ 160 C 120 ~ 200 D 160 ~ 300 ©2001 , Complementary to SS8050 applications q Collector Current : I = 1.5A C New products q Collector Dissipation: P C


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PDF SS8550 SS8050 SS8550 SS8550 cross reference ss8550 TRANSISTOR cross reference ss8550 transistor SS8550 transistor TO-92 SS8050 SS8050 application notes
2007 - Not Available

Abstract: No abstract text available
Text: Operating and storage junction temperature range: -55OC to +150 OC Marking : SS8050 Lead Free Finish/RoHS , uAdc D ON CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VEB 120 40 -300 -0.5 1.2 1.6 -Vdc Vdc Vdc DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 .173 E E B C B C , CHARACTERISTICS fT 190 -MHz CLASSIFICATION OF HFE (1) D 160-300 Straight Lead Bent Lead * For ammo


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PDF SS8050-C SS8050-D -55OC SS8050 100uAdc,
1999 - transistor TO-92 SS8050

Abstract: No abstract text available
Text: SS8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. · Complimentary to SS8050 · Collector Current: IC= -1.5A · Collector Dissipation: PC=2W (TC=25°C) TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage , ) B 85-160 C 120-200 D 160-300 Rev. B ©1999 Fairchild Semiconductor Corporation SS8550


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PDF SS8550 SS8050 transistor TO-92 SS8050
2007 - transistor SS8050D

Abstract: SS8050D
Text: Operating and storage junction temperature range: -55OC to +150 OC Marking : SS8050 Lead Free Finish/RoHS , uAdc D ON CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VEB 120 40 -300 -0.5 1.2 1.6 -Vdc Vdc Vdc DIM A B C D E G INCHES MIN .170 .170 .550 .010 .130 .096 G DIMENSIONS MM MIN 4.33 4.30 13.97 0.36 3.30 2.44 SMALL-SIGNAL CHARACTERISTICS fT 190 -MHz CLASSIFICATION OF HFE (1) D


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PDF SS8050-C SS8050-D -55OC SS8050 100uAdc, transistor SS8050D SS8050D
2007 - SS8050D

Abstract: No abstract text available
Text: Operating and storage junction temperature range: -55OC to +150 OC Marking : SS8050 Lead Free Finish/RoHS , uAdc D ON CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VEB 120 40 -300 -0.5 1.2 1.6 -Vdc Vdc Vdc DIM A B C D E G INCHES MIN .170 .170 .550 .010 .130 .096 G DIMENSIONS MM MIN 4.33 4.30 13.97 0.36 3.30 2.44 SMALL-SIGNAL CHARACTERISTICS fT 190 -MHz CLASSIFICATION OF HFE (1) D


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PDF SS8050-C SS8050-D -55OC SS8050 100uAdc, SS8050D
2007 - Not Available

Abstract: No abstract text available
Text: Operating and storage junction temperature range: -55OC to +150 OC Marking : SS8050 Lead Free Finish/RoHS , )CEO V(BR)EBO ICBO ICEO IEBO uAdc uAdc uAdc D ON CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VEB 120 40 -300 -0.5 1.2 1.6 -Vdc Vdc Vdc DIM A B C D E G INCHES MIN .175 .175 .500 .016 , 3.68 2.67 5.60 NOTE SMALL-SIGNAL CHARACTERISTICS fT 190 -MHz CLASSIFICATION OF HFE (1) D , website of product packaging for details. www.mccsemi.com Revision: D 1 of 2 2013/01/01 MCC


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PDF SS8050-C SS8050-D -55OC SS8050
Not Available

Abstract: No abstract text available
Text: SS8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. · Complimentary to SS8050 · Collector Current: lc= -1.5A · Collector Dissipation: PC , 120-200 D 160-300 C lassification hFE(2) FAIRCHILD S E M IC O N D U C T O R tm © 1999 Fairchild , BASE-EMITTER VO LTAGE C U R R E N T G A I N -B A N D W I D T H P R O D U C T MmAfc CO LLECTO R CURRENT COLLECTOR OUTPUT CAPACITANCE Vc«(V), C O LLEC TO R -BASE VO LTAG E FAIRCHILD s e m ic o n d u c to r


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PDF SS8550 SS8050
Not Available

Abstract: No abstract text available
Text: Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking : SS8050 , CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VEB D DC Current Gain (IC=100mAdc, V CE=1.0Vdc) DC , =50mAdc, VCE=10Vdc, f=30MHz) 190 - CLASSIFICATION OF HFE (1) Rank Range C 120-200 E D , DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 .173 MM MAX .185 .185 , Revision: D 2013/01/01 MCC TM Micro Commercial Components Ordering Information : Device


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PDF SS8050-C SS8050-D -55OC SS8050
2002 - SS8050

Abstract: ss8050 equivalent SS8550
Text: SS8550 SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. · Complimentary to SS8050 · Collector Current: IC=1.5A · Collector Power Dissipation: PC=2W (TC=25°C) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -40 , Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300 ©2002 Fairchild Semiconductor


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PDF SS8550 SS8050 SS8050 ss8050 equivalent SS8550
2000 - Not Available

Abstract: No abstract text available
Text: SS8550 SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. · Complimentary to SS8050 · Collector Current: IC=1.5A · Collector Dissipation: PC=2W (TC=25°C) 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage , Product hFEClassification Classification hFE2 B 85 ~ 160 C 120 ~ 200 D 160 ~ 300 ©2000 Fairchild


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PDF SS8550 SS8050
2001 - transistor TO-92 SS8050

Abstract: ss8550 TRANSISTOR equivalent ss8550 SS8050
Text: SS8550 SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. · Complimentary to SS8050 · Collector Current: IC=1.5A · Collector Power Dissipation: PC=2W (TC=25°C) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -40 , Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300 ©2001 Fairchild Semiconductor


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PDF SS8550 SS8050 transistor TO-92 SS8050 ss8550 TRANSISTOR equivalent ss8550 SS8050
1999 - ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 DIODE 1N4148 LL-34 MPSA92(KSP92) equivalent
Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOSFETs PWM Optimized PowerTrenchTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . , SS39 SS8050 SS8050 SS8550 SS8550 SS9011 SS9012 SS9013 SS9014 SS9015 SS9016 SS9018 SSF10N60A


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PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 DIODE 1N4148 LL-34 MPSA92(KSP92) equivalent
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