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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

smd transistor l6 Datasheets Context Search

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2007 - transistor 2N2222 SMD

Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor ACPR600 TRANSISTOR SMD L3 78L08 w2 smd transistor
Text: BLF4G10LS-160 NXP Semiconductors UHF power LDMOS transistor +Vbias VDD L6 C7 C8 C9 C10 , BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 - 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at , Semiconductors UHF power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE and , BLF4G10LS-160 NXP Semiconductors UHF power LDMOS transistor 6. Characteristics Table 6


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PDF BLF4G10LS-160 ACPR400 ACPR600 BLF4G10LS-160 transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 78L08 w2 smd transistor
2007 - capacitor 2200 uF

Abstract: transistor 2N2222 SMD R10 smd BLF4G10-160 ACPR750 ACPR600 ACPR400 ACPR1980 78L08 2N2222
Text: BLF4G10-160 UHF power LDMOS transistor Rev. 01 - 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at , UHF power LDMOS transistor 1.3 Applications I RF power amplifiers for GSM, GSM EDGE and CDMA base , June 2007 2 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor 6 , 22 June 2007 3 of 14 BLF4G10-160 NXP Semiconductors UHF power LDMOS transistor


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PDF BLF4G10-160 ACPR400 ACPR600 ACPR750 ACPR1980 BLF4G10-160 capacitor 2200 uF transistor 2N2222 SMD R10 smd 78L08 2N2222
SMD TRANSISTOR L6

Abstract: BLT80 philips Trimmer 60 pf L7 smd transistor TRANSISTOR SMD L3 L5 smd transistor MRA775 smd transistor zi 131 Transistor KM10 transistor
Text: Semiconductors Product specification UHF power transistor BLT80 FEATURES · SMD encapsulation · Gold , transistor encapsulated in a plastic SOT223 SMD package. 1 PINNING - SOT223 2 3 MAM043 - 1 , DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification , 02 2 Philips Semiconductors Product specification UHF power transistor BLT80 , characteristics" 1. Ts is the temperature at the soldering point of the collector pin. 2. Transistor mounted on


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PDF BLT80 SC08b OT223 OT223 MAM043 SMD TRANSISTOR L6 BLT80 philips Trimmer 60 pf L7 smd transistor TRANSISTOR SMD L3 L5 smd transistor MRA775 smd transistor zi 131 Transistor KM10 transistor
1998 - SMD DIODE gp 817

Abstract: smd resistor philips 1206 smd capacitor philips transistor SMD DK SMD TRANSISTOR L6 philips ceramic capacitors smd SMD Transistor 6f philips smd 1206 resistor philips smd 1206 BEP SMD ZENER
Text: DESCRIPTION Semiconductors D1 BZX84, C6V2 SMD Zener Diode T1 MJD31C SMD NPN Transistor T2 BC846C SMC NPN Transistor R1 1.1 k SMD resistor Philips 1206 R2 4.3 k SMD , . The amplifier is equipped with the Philips BLV2044, a NPN silicon planar transistor in a 2-lead SOT437 , profile. When operated from a 26 V supply in class-AB mode the transistor has a minimum power gain of 8 , of the transistor are designed for an optimum gain flatness and efficiency over the PCS band. Bypass


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PDF BLV2044 AN98022 BLV2044, OT437 SCA57 SMD DIODE gp 817 smd resistor philips 1206 smd capacitor philips transistor SMD DK SMD TRANSISTOR L6 philips ceramic capacitors smd SMD Transistor 6f philips smd 1206 resistor philips smd 1206 BEP SMD ZENER
1998 - smd-transistor DATA BOOK

Abstract: SMD Transistor TRANSISTOR SMD catalog rt/duroid 6006 transistor SMD DK Philips 2222-581 smd-transistor -1.am smd transistor l6 SMD Transistor 6f Capacitor Tantal SMD 106
Text: application note contains information on a 4 W class-AB amplifier based on the SMD transistor BLV2042. The , 1990 MHz. The next sections contain information on the transistor , the amplifier construction and the typical RF performance obtained. 2 TRANSISTOR BACKGROUND The BLV2042 is an NPN bipolar RF power transistor in an 8-lead SMD package called SOT409. The package contains an Aluminium Nitride (AlN) substrate , INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER DESCRIPTION 4 AMPLIFIER PERFORMANCE 5


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PDF BLV2042 AN98018 BLV2042. 199lding SCA57 smd-transistor DATA BOOK SMD Transistor TRANSISTOR SMD catalog rt/duroid 6006 transistor SMD DK Philips 2222-581 smd-transistor -1.am smd transistor l6 SMD Transistor 6f Capacitor Tantal SMD 106
1998 - AL SMD transistor

Abstract: l14 254 transistor 935 SMD AN98017 MGH816 BLV904 AN98026 AN98019 TRANSISTOR SMD catalog Philips 2222-581
Text: INTRODUCTION This application note contains information on a 5 W class-AB amplifier based on the SMD transistor BLV904. The amplifier described can be used for driver stages in cellular radio base stations in the GSM band 935 - 960 MHz. The next chapters contain information on the transistor , the amplifier construction and the typical RF performance obtained. TRANSISTOR BACKGROUND The BLV904 is an NPN bipolar RF power transistor in an 8-lead SMD package called SOT409. The package contains an Aluminium Nitride (AIN


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PDF BLV904 AN98019 BLV904 BLV904. OT409. SCA57 AL SMD transistor l14 254 transistor 935 SMD AN98017 MGH816 AN98026 AN98019 TRANSISTOR SMD catalog Philips 2222-581
1998 - MGH80

Abstract: AN98017 AN98020 AN98026 BLV909 SMD TRANSISTOR TRANSISTOR SMD catalog
Text: application note contains information on a 9 W class-AB amplifier based on the SMD transistor BLV909. The , . The next sections contain information on the transistor , the amplifier construction and the typical RF performance obtained. 2 TRANSISTOR BACKGROUND The BLV909 is an NPN bipolar RF power transistor in an 8-lead SMD package called SOT409. The package contains an Aluminium Nitride (AIN) substrate , INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER BACKGROUND 4 AMPLIFIER PERFORMANCE 5


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PDF BLV909 AN98020 BLV909. SCA57 MGH80 AN98017 AN98020 AN98026 SMD TRANSISTOR TRANSISTOR SMD catalog
2001 - rogers 5880

Abstract: UT70-25 1008CS-102XKBC BLF647 transistor 2164 transistor 2001 H1 rf transistor smd pages 2222 595 smd transistor w1
Text: UHF power LDMOS transistor ok, full pagewidth 2001 Nov 27 + VD L6 C8 Product , DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product , UHF power LDMOS transistor BLF647 FEATURES PINNING - SOT540A · High power gain PIN , DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with , Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 THERMAL


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PDF M3D392 BLF647 OT540A SCA73 613524/03/pp16 rogers 5880 UT70-25 1008CS-102XKBC BLF647 transistor 2164 transistor 2001 H1 rf transistor smd pages 2222 595 smd transistor w1
2001 - TEKELEC

Abstract: 1800 ldmos sot540a transistor 2001 H1
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification UHF power LDMOS transistor , Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic , transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to , specification UHF power LDMOS transistor BLF647 APPLICATION INFORMATION RF performance in a common


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PDF M3D392 BLF647 BLF647 OT540A MBK777 budgetnum/printrun/ed/pp15 TEKELEC 1800 ldmos sot540a transistor 2001 H1
2001 - smd transistor A6

Abstract: transistor SMD A6
Text: Semiconductors UHF power LDMOS transistor handbook, full pagewidth 2001 Nov 27 + VD L6 C8 , DISCRETE SEMICONDUCTORS DAT M3D392 BLF647 UHF power LDMOS transistor Product , UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES • High power gain PIN , Top view DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a , LDMOS transistor BLF647 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb


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PDF M3D392 BLF647 OT540A SCA73 613524/03/pp16 smd transistor A6 transistor SMD A6
2001 - 22 pf TEKELEC

Abstract: BLF647 transistor 2001 H1
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Preliminary specification 2001 Mar 27 Philips Semiconductors Preliminary specification UHF power LDMOS transistor , Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic , transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to , specification UHF power LDMOS transistor BLF647 APPLICATION INFORMATION RF performance in a common


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PDF M3D392 BLF647 BLF647 OT540A MBK777 budgetnum/printrun/ed/pp15 22 pf TEKELEC transistor 2001 H1
1996 - philips 2322 734

Abstract: bvc62 philips SMD resistor 805 philips resistor 2322-734 transistor bd139 chip die npn transistor 2322 722 philips power transistor bd139 TRANSISTOR NPN BD139 SMD transistor L17
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product , UHF linear push-pull power transistor BLV859 PINNING SOT262B FEATURES · Double internal , DESCRIPTION e NPN silicon planar transistor with two sections in push-pull configuration. The device is , specification UHF linear push-pull power transistor BLV859 LIMITING VALUES In accordance with the , Product specification UHF linear push-pull power transistor BLV859 CHARACTERISTICS Values apply


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PDF BLV859 OT262B BLV859 SCA51 127041/1200/02/pp16 philips 2322 734 bvc62 philips SMD resistor 805 philips resistor 2322-734 transistor bd139 chip die npn transistor 2322 722 philips power transistor bd139 TRANSISTOR NPN BD139 SMD transistor L17
1996 - DK230

Abstract: transistor bd139 bvc62 philips 2322 734 UT70-25 smd for bd139 philips power transistor bd139 smd L17 npn BLV859 smd transistor 912
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV859 UHF linear push-pull power transistor Product , Philips Semiconductors Product specification UHF linear push-pull power transistor BLV859 , planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B , power transistor BLV859 LIMITING VALUES In accordance with the Absolute Maximum Rating System , linear push-pull power transistor BLV859 CHARACTERISTICS Values apply to either transistor section


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PDF BLV859 SC08a OT262B BLV859 SCA51 127041/1200/02/pp16 DK230 transistor bd139 bvc62 philips 2322 734 UT70-25 smd for bd139 philips power transistor bd139 smd L17 npn smd transistor 912
1996 - 358 SMD transistor

Abstract: No abstract text available
Text: transistor FEATURES · SMD encapsulation · Gold metallization ensures excellent reliability. APPLICATIONS · , DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 2 3 e , DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification , specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System , soldering point of the collector pin. 2. Transistor mounted on a printed-circuit board measuring 40 × 40 × 1


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PDF BLT80 BLT80 OT223 MAM043 cir2724825 SCDS48 127061/1200/02/pp12 771-BLT80-T/R 358 SMD transistor
1997 - smd transistor 805 239

Abstract: SMD transistor L17 smd L17 npn transistor bd139 5- pin smd IC 358 philips power transistor bd139 STR 457 transistor smd transistor L6 philips resistor 2322 smd transistor t2
Text: P1 SMD resistor potentiometer 3.3 2 k 805 2322 734 23308 T1 T2 NPN transistor , DISCRETE SEMICONDUCTORS DATA SHEET BLV857 UHF linear push-pull power transistor Product , UHF linear push-pull power transistor FEATURES BLV857 PINNING SOT324B · Internal input , e NPN silicon planar transistor with two sections in push-pull configuration. The device is , Product specification UHF linear push-pull power transistor BLV857 LIMITING VALUES In accordance


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PDF BLV857 OT324B SCA53 127067/0/02/pp12 smd transistor 805 239 SMD transistor L17 smd L17 npn transistor bd139 5- pin smd IC 358 philips power transistor bd139 STR 457 transistor smd transistor L6 philips resistor 2322 smd transistor t2
1996 - Not Available

Abstract: No abstract text available
Text: transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability , DISCRETE SEMICONDUCTORS DAT BLT80 UHF power transistor Product specification Supersedes , band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 PINNING - SOT223 2 3 MAM043 - 1 Top view PIN SYMBOL , Semiconductors Product specification UHF power transistor BLT80 LIMITING VALUES In accordance with


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PDF BLT80 OT223 OT223 MAM043 SCDS48 127061/1200/02/pp12
1996 - 4894

Abstract: SMD ic catalogue BLT80 KM10 4312 020 36640
Text: transistor BLT80 FEATURES · SMD encapsulation · Gold metallization ensures excellent reliability. 4 , DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 , DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification , transistor BLT80 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , pin. 2. Transistor mounted on a printed-circuit board measuring 40 × 40 × 1 mm, collector pad 35 × 17


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PDF BLT80 OT223 OT223 MAM043 SCDS48 127061/1200/02/pp12 4894 SMD ic catalogue BLT80 KM10 4312 020 36640
1996 - Not Available

Abstract: No abstract text available
Text: transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability , DISCRETE SEMICONDUCTORS DAT BLT81 UHF power transistor Product specification Supersedes , band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 PINNING - SOT223 2 3 MAM043 - 1 Top view PIN SYMBOL , . 77 2 Gp (dB) Philips Semiconductors Product specification UHF power transistor


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PDF BLT81 OT223 OT223 MAM043 SCDS48 127061/1200/02/pp12
1996 - 2222 730

Abstract: BLT81
Text: power transistor BLT81 FEATURES · SMD encapsulation · Gold metallization ensures excellent , DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification , communication band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 PINNING - SOT223 2 3 MAM043 - 1 Top view PIN SYMBOL , 2 Philips Semiconductors Product specification UHF power transistor BLT81 LIMITING


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PDF BLT81 OT223 OT223 MAM043 SCDS48 127061/1200/02/pp12 2222 730 BLT81
1996 - BLT81

Abstract: No abstract text available
Text: Semiconductors Product specification UHF power transistor BLT81 FEATURES · SMD encapsulation · Gold , transistor encapsulated in a plastic SOT223 SMD package. 1 PINNING - SOT223 2 3 MAM043 - 1 , DISCRETE SEMICONDUCTORS DATA SHEET BLT81 UHF power transistor Product specification , power transistor BLT81 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC , Product specification UHF power transistor BLT81 CHARACTERISTICS Tj = 25 °C unless otherwise


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PDF BLT81 SC08b OT223 OT223 MAM043 SCDS48 127061/1200/02/pp12 BLT81
1998 - 358 SMD transistor

Abstract: smd capacitor philips philips ceramic capacitors smd smd resistor philips 1206 CERAMIC CAPACITOR SMD PHILIPS transistor SMD DK capacitor SMD PHILIPS AN98026 SMD Transistor 6f philips smd 1206 resistor
Text: SMD NPN Transistor T2 BC846C SMC NPN Transistor Table 3 Resistors COMPONENTS VALUES , . The amplifier is equipped with the Philips BLV2045, a NPN silicon planar transistor in a 2-lead SOT390 , profile. When operated from a 26 V supply in class AB mode the transistor has a minimum power gain of 8 , input- and output of the transistor are designed for an optimum gain flatness and efficiency over the , tantal SMD capacitor C3, C4 multilayer ceramic chip capacitor; note 2 20 pF C5 multilayer


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PDF BLV2045 AN98023 BLV2045, OT390 SCA57 358 SMD transistor smd capacitor philips philips ceramic capacitors smd smd resistor philips 1206 CERAMIC CAPACITOR SMD PHILIPS transistor SMD DK capacitor SMD PHILIPS AN98026 SMD Transistor 6f philips smd 1206 resistor
1996 - TRANSISTOR BD139

Abstract: smd transistor L6 philips power transistor bd139 bd139 application note UHF TRANSISTOR BD139 transistor bd139 smd RF POWER TRANSISTOR NPN TRANSISTOR SMD catalog L6 smd transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT70 UHF power transistor Product specification File , UHF power transistor BLT70 FEATURES · Very high efficiency · Low supply voltage. 4 , the 900 MHz communication band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223H SMD package. 1 PINNING - SOT223H 2 3 MAM043 - 1 Top view , Semiconductors Product specification UHF power transistor BLT70 LIMITING VALUES In accordance with


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PDF BLT70 SC08b OT223H OT223H MAM043 TRANSISTOR BD139 smd transistor L6 philips power transistor bd139 bd139 application note UHF TRANSISTOR BD139 transistor bd139 smd RF POWER TRANSISTOR NPN TRANSISTOR SMD catalog L6 smd transistor
1998 - BLT50

Abstract: philips Trimmers 2222 series MEA218 MEA223 RF Transistor smd transistor zl
Text: UHF power transistor FEATURES · SMD encapsulation · Gold metallization ensures excellent , DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification File , transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in hand-held , Product specification UHF power transistor BLT50 LIMITING VALUES In accordance with the Absolute , Product specification UHF power transistor BLT50 CHARACTERISTICS Tj = 25 °C. SYMBOL


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PDF BLT50 SC08b OT223 BLT50 philips Trimmers 2222 series MEA218 MEA223 RF Transistor smd transistor zl
1998 - L5 smd transistor

Abstract: BLU86 c 129 transistor L6 smd transistor SMD ic catalogue MRA235 transistor handbook MRA236
Text: specification UHF power transistor FEATURES · SMD encapsulation · Emitter-ballasting resistors for , DISCRETE SEMICONDUCTORS DATA SHEET BLU86 UHF power transistor Product specification File , silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed , power transistor BLU86 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). , power transistor BLU86 CHARACTERISTICS Tj = 25 °C. SYMBOL PARAMETER CONDITIONS MIN


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PDF BLU86 SC08b L5 smd transistor BLU86 c 129 transistor L6 smd transistor SMD ic catalogue MRA235 transistor handbook MRA236
1998 - BLU56

Abstract: 35XL 809 npn smd 809 x transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU56 UHF power transistor Product specification January 1991 Philips Components Product specification UHF power transistor FEATURES · SMD , . DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and , Product specification UHF power transistor BLU56 LIMITING VALUES In accordance with the Absolute , 3 MAX. 35 UNIT K/W Philips Components Product specification UHF power transistor


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PDF BLU56 OT223 BLU56 35XL 809 npn smd 809 x transistor
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