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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

smd transistor equivalent table Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - 30RF35

Abstract: VJ1206Y104KXB smd transistor equivalent table
Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics , VJ1206Y104KXB or equivalent ATC 100B or equivalent Ferroxcube BDS 3/3/4.6-4S2 or equivalent SMD 1206 SMD 1206 C1 , . Abbreviations Table 10. Acronym CCDF CDMA CW EVM FCH FFT IBW IS-95 LDMOS LDMOST N-CDMA PAR PUSC RF SMD VSWR WCS , BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 01 - 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base


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PDF BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 30RF35 VJ1206Y104KXB smd transistor equivalent table
2013 - BLF6G38S-25

Abstract: transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
Text: -25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = , LDMOS transistor Table 9. L1 R1, R2 R3 List of components (see Figure 10) .continued Description ferrite SMD bead SMD resistor SMD resistor Table 10. f MHz 3400 3450 3500 3550 3600 Value 20 9.1 Remarks Ferroxcube BDS3/3/4.6-4S2 or equivalent SMD 1206 SMD 1206 Component Measured test circuit impedances ZS


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
2008 - smd transistor equivalent table

Abstract: smd transistor 3400 J412 - TRANSISTOR SMD BLF6G38S-25 RF35 cdma QPSK modulation Walsh pilot C5750X7R1H106M C4532X7R1H475M BLF6G38-25 BDS3/3/4.6-4S2-Z
Text: Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise , Remarks L1 ferrite SMD bead - Ferroxcube BDS3/3/4.6-4S2 or equivalent R1, R2 SMD resistor 20 SMD 1206 R3 SMD resistor 9.1 SMD 1206 Table 10. Measured test circuit , power LDMOS transistor 10. Abbreviations Table 11. Abbreviations Acronym Description


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 smd transistor equivalent table smd transistor 3400 J412 - TRANSISTOR SMD RF35 cdma QPSK modulation Walsh pilot C5750X7R1H106M C4532X7R1H475M BDS3/3/4.6-4S2-Z
2005 - smd transistor J3

Abstract: smd transistor equivalent table Transistor AND DIODE Equivalent list j3 smd transistor EB052 schematic diagram of led monitor 201 smd transistor 3M smd transistor TRANSISTOR SMD 3m smd transistor w J3
Text: , Schottky, 1 A, 40 V, SOT-23 10 LED, Green, 10 mcd, 2.2 VF at 20 mA, 1206 SMD Transistor , PNP, 2 A , SMD 2 3 Diode, Schottky, 2 A, 20 V, SMB Transistor , PNP, SOT-223 Manufacturer/Part Number , www.analog.com Fax: 781.326.8703 © 2005 Analog Devices, Inc. All rights reserved. ADP2291-EVAL TABLE OF , dissipation on the pass transistor is high, Q1 can be removed and a SOT-223 package installed at Q2. Jumper , ) Figure 4. Top Layer (Top View) Rev. 0 | Page 4 of 8 ADP2291-EVAL PARTS LIST Table 1. Item 1


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PDF ADP2291-EVAL ADP2291, ADP2291 ADP2291-EVAL EB05266-0-1/05 smd transistor J3 smd transistor equivalent table Transistor AND DIODE Equivalent list j3 smd transistor EB052 schematic diagram of led monitor 201 smd transistor 3M smd transistor TRANSISTOR SMD 3m smd transistor w J3
2008 - TRANSISTOR j412

Abstract: J412 - TRANSISTOR SMD BLF6G38S-25
Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 , 14 NXP Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Table 10. L1 R1 , SMD resistor Value 20 9.1 Remarks Ferroxcube BDS3/3/4.6-4S2 or equivalent SMD 1206 SMD 1206 , Semiconductors BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor 10. Abbreviations Table 11. Acronym , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 TRANSISTOR j412 J412 - TRANSISTOR SMD
2009 - 12-0-12 transformer used 24v dc supply

Abstract: smd transistor 6p transistor SMD 12W MOSFET TRANSISTOR SMD 2X y 12-0-12 transformer transistor SMD 12W transistor SMD 12W sot-23 16ME1800WG IC LM 258 smd SMD SJ 57a
Text: , SMD , TFP, 150V, 57A,ROHS FUJI ELECTRIC MJD31CG 1 ea Q3 TRANSISTOR , NPN, 3P , power supply. It can be used in various single transistor topologies including forward and flyback , drain source of the transistor . As the main switch is turned off, a resonance is developed between the magnetizing/leakage inductance and the equivalent resonant capacitor. The high voltage across the drain of , the drain of the transistor is clamped to VIN. VIN*NS/NP V DS V RES VOUT = VIN*D*NS/NP TX


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PDF ISL6721EVAL3Z: 8x12-STATIC-BAG AN1491 12-0-12 transformer used 24v dc supply smd transistor 6p transistor SMD 12W MOSFET TRANSISTOR SMD 2X y 12-0-12 transformer transistor SMD 12W transistor SMD 12W sot-23 16ME1800WG IC LM 258 smd SMD SJ 57a
1997 - SIPMOS

Abstract: smd transistors list smd transistor equivalent table Small Signal MOSFETs BSP 220 equivalent Transistor comparable types smd transistors
Text: the RDS(On) values. Table 1 Comparison of Data Sheet Figures for MOS Transistor SMD Packages At , not be exceeded. Figure 2 shows a section through a SIPMOS transistor cell and the equivalent circuit , ­ bipolar transistor . Figure 2 Section Through SIPMOS Transistor Cell and Equivalent Circuit Diagram , SIPMOS transistors of SMD design react to pulse-shaped loads. As the SOA (safe operating area) diagram , is not exceeded. So for normal operation, a transistor no longer has to be overdesigned in terms of


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2008 - transistor K 1352

Abstract: C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB RF35 C4532X7R1H475M BLF6G27LS-135 BLF6G27-135 30RF35 722 smd transistor
Text: Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin , WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless , 100B or equivalent L1 ferrite SMD bead - Ferroxcube BDS 3/3/4.6-4S2 or equivalent R1 , Semiconductors BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Table 10. Measured test circuit , BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 - 26 May 2008 Product data


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PDF BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 transistor K 1352 C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB RF35 C4532X7R1H475M 30RF35 722 smd transistor
1996 - MOSFET TRANSISTOR SMD MARKING CODE nh

Abstract: TRANSISTOR SMD MARKING CODE LF MMIC SOT 343 marking CODE BC 148 TRANSISTOR PIN CONFIGURATION TRANSISTOR SMD CODE PACKAGE SOT363 smd diode sod-323 marking code 31 smd mosfet sot-363 SMD TRANSISTOR MARKING BF transistor 313 smd smd code marking SOT223 MINI POWER MOSFET
Text: B E Table 4 GaAs MMICs in SMD packages Type Package Description CGY 50 CGY 52 CGY , ratio of base (R1) to base-emitter resistance (R2), so that the equivalent digital transistor is , -323 SMD package, for example, has been designed "upside down" in comparison with the conventional SOT , SOT-323, SOT-343 and SOT-363 series listed in Table 1 can be operated with a total power dissipation , - Table 1 Spectrum of discrete semiconductors available in SOT-23 package and in miniature packages SOT


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1995 - smd transistor h2a

Abstract: H2A SMD transistor H2A transistor SMD transistor smd H2A SMD Transistor Y8 HSA2-040SAA/A2320A HSA2-040SIA/A2S23 smd transistor Y10 TSHARC A2 hsa2040saa
Text: 10K ohm Yageo America: RC0603JR-0710KL or equivalent RES 10K OHM 1/10W 5% 0603 SMD R7 1 20.0K ohm Yageo America: RC0603JR-0720KL or equivalent RES 20K OHM 1/10W 5% 0603 SMD R9 1 330 ohm Yageo America: RC0603JR-07330RL or equivalent RES 330 OHM 1/10W 5% 0603 SMD R20 1 1.5K ohm Yageo America: RC0603JR-071K5L or equivalent RES 1.5K OHM 1/10W 5% 0603 SMD , SMD 1 9 150K ohm Yageo America: RC0603JR-07150KL or equivalent NXP: PESD5VDS1BA or


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PDF \PigData\MasterBinders\03 RS-232 000MABJ-UT 000MHZ CD74HC4052PWR 16-TSSOP HSAX-040SIA SN74AHC1G04DCKR SC70-5 74HC4052 smd transistor h2a H2A SMD transistor H2A transistor SMD transistor smd H2A SMD Transistor Y8 HSA2-040SAA/A2320A HSA2-040SIA/A2S23 smd transistor Y10 TSHARC A2 hsa2040saa
2009 - smd transistor 6g

Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 radar circuit component sot975c transistor equivalent table TAJD106K035R BLS6G2731-6G J656
Text: radar power transistor 2. Pinning information Table 2. Pinning Pin Description 1 , Semiconductors LDMOS S-Band radar power transistor 6. Characteristics Table 6. Characteristics Tj = 25 , BLS6G2731-6G NXP Semiconductors LDMOS S-Band radar power transistor Table 8. Typical impedance , radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym Description , BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 - 19 February 2009 Product data


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PDF BLS6G2731-6G BLS6G2731-6G smd transistor 6g 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 radar circuit component sot975c transistor equivalent table TAJD106K035R J656
2009 - C5750X7R1H106M

Abstract: BLF6G20LS-140 C4532X7R1H475M RF35 smd transistor equivalent table
Text: transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol , R3 SMD resistor 9.1 [1] TDK C4532X7R1H475M or equivalent Ferroxcube BDS 3/3/8.9-4S2 or , BLF6G20LS-140 NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 9 , BLF6G20LS-140 Power LDMOS transistor Rev. 01 - 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at


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PDF BLF6G20LS-140 BLF6G20LS-140 C5750X7R1H106M C4532X7R1H475M RF35 smd transistor equivalent table
2011 - Not Available

Abstract: No abstract text available
Text: -150 NXP Semiconductors LDMOS S-band radar power transistor 2. Pinning information Table 2 , radar power transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise , transistor Table 8. Typical impedance f ZS ZL GHz Ω Ω 2.9 2.2 − j7.4 4.2 , BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar


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PDF BLS7G2933S-150
2011 - BLS7G2933S-150

Abstract: radar amplifier s-band SOT922-1 JESD625-A
Text: transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate , S-band radar power transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless , BLS7G2933S-150 NXP Semiconductors LDMOS S-band radar power transistor Table 8. Typical impedance , 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 10. Abbreviations Acronym , BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 - 23 February 2011 Product data


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PDF BLS7G2933S-150 BLS7G2933S-150 radar amplifier s-band SOT922-1 JESD625-A
2010 - BLS7G2933S-150

Abstract: a 3150 data sheet JESD625-A
Text: transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate , S-band radar power transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless , BLS7G2933S-150 NXP Semiconductors LDMOS S-band radar power transistor Table 8. Typical impedance , .20, IEC/ST 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 10. Abbreviations , Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency S-band Short wave Band SMD


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PDF BLS7G2933S-150 BLS7G2933S-150 a 3150 data sheet JESD625-A
2007 - FAN7554 equivalent

Abstract: NPX104M275VX2M FDQ2N80 EFD20 no y-cap FEB157-001 evaluation board FEB157 evaluation board FAN7554 CTX0117 FEB157 RTH1 THERMISTOR
Text: NIC Components or Equivalent NACK470M50V6.3X8TR 47µF, 50V, SMD C5 NIC Components or , controlling the current. In this evaluation board a method utilizing sense resistors and an NPN transistor is , . Table 1 describes the jumper status for particular output currents. © 2007 Fairchild Semiconductor Page 4 of 17 Rev 1.1 April 2007 www.fairchildsemi.com Table 1: Jumper JP1/JP2 Status and LED , voltage of the NPN Q2, typically about 650mV, the transistor will conduct collector current. This current


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PDF FEB157-001 FAN7554 FAN7554 equivalent NPX104M275VX2M FDQ2N80 EFD20 no y-cap FEB157-001 evaluation board FEB157 evaluation board FAN7554 CTX0117 FEB157 RTH1 THERMISTOR
2010 - Not Available

Abstract: No abstract text available
Text: -130 NXP Semiconductors LDMOS S-band radar power transistor 6. Characteristics Table 6 , power transistor Table 8. Typical impedance f ZS ZL GHz 2.9 2.2 - j7 , March 2010 ATC 700A or equivalent SMD 0603 © NXP B.V. 2010. All rights reserved. 7 of 12 , transistor 10. Abbreviations Table 10. Abbreviations Acronym Description LDMOS Laterally , BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 - 3 March 2010 Product data sheet


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PDF BLS6G2933S-130 BLS6G2933S-130
2010 - Not Available

Abstract: No abstract text available
Text: Semiconductors LDMOS S-band radar power transistor Table 8. Typical impedance f ZS ZL GHz , Semiconductors LDMOS S-band radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym , Metal-Oxide Semiconductor Transistor RF Radio Frequency S-band Short wave Band SMD Surface , BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar


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PDF BLS6G2933S-130 BLS6G2933S-130
2009 - transistor d 1302

Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
Text: transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol , -130 NXP Semiconductors LDMOS S-band radar power transistor Table 8. Typical impedance f ZS , or equivalent SMD 0603 © NXP B.V. 2009. All rights reserved. Rev. 02 - 18 June 2009 7 of , Semiconductors LDMOS S-band radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym , Metal-Oxide Semiconductor Transistor RF Radio Frequency S-band Short wave Band SMD Surface


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PDF BLS6G2933S-130 BLS6G2933S-130 transistor d 1302 smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
2008 - amplifier TRANSISTOR 12 GHZ

Abstract: smd transistor w J 3 58 smd transistor equivalent table smd transistor 927
Text: -130 NXP Semiconductors LDMOS S-band radar power transistor Table 8. Typical impedance f ZS , ATC 700A or equivalent SMD 0603 © NXP B.V. 2008. All rights reserved. Rev. 01 - 11 December , Semiconductors LDMOS S-band radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym , Metal-Oxide Semiconductor Transistor RF Radio Frequency S-band Short wave Band SMD Surface , BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 - 11 December 2008 Objective data


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PDF BLS6G2933S-130 BLS6G2933S-130 amplifier TRANSISTOR 12 GHZ smd transistor w J 3 58 smd transistor equivalent table smd transistor 927
220uf 16v capacitor

Abstract: schematic diagram electric drill 1N4007 RECTIFIER DIODE IEC61036 SA4104 SCHEMATIC DIAGRAM UNIVERSAL 220V MOTOR led 3mm red 3.3V ZENER DIODE 250v energy meter circuit diagram SA4104A
Text: zener diode, 5%, 0.5W, leaded D9 LED 3mm, RED Q1 BC846B NPN transistor , SMD SOT23 Q2 BC856B PNP transistor , SMD SOT23 U1 SA4104A Energy meter device, 16-pin SOIC, 0.8mm , listed in Table 1 on page 2. The typical value of IMAX is 400% of Ib. A basic meter block diagram , capacitive (lead) ± 1.0% Table 1: IEC61036 Accuracy Specifications CIRCUIT DESIGN PRINCIPLES , capacitors C12 and C13 must also be equal (C12 = C13 = CC). In this case the equivalent resistance


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PDF RM4104ASEB RM4104ASEB IEC61036 SA4101A SA4104A 220uf 16v capacitor schematic diagram electric drill 1N4007 RECTIFIER DIODE SA4104 SCHEMATIC DIAGRAM UNIVERSAL 220V MOTOR led 3mm red 3.3V ZENER DIODE 250v energy meter circuit diagram
1996 - bc237 smd

Abstract: microwave sensor microwave distance sensors ne 556 timer bc237 equivalent SMD microwave RADAR motion sensors microwave motion sensors motion sensor doppler motion sensor doppler effect motion DOPPLER
Text: fieldeffect transistor . These SMD components are automatically placed on an RF multilayer teflon board. This , available in an SMD package as digital transistor BCR 133 temperature difference between the moving , soldered to its diecast casing. An LF board of SMD design with voltage stabilization and a twostage , applications free of charge. M With an equivalent isotropic radiated power (EIRP) of only 1 mW (see , voltage regulator. EIRP The equivalent isotropic radiated power is calculated from the product of the


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2007 - l6599

Abstract: TRANSISTOR BC 814 r46 arcotronics AN2393 L6599 application note AN1792 L6599 application note l6563 200w arcotronics 1uf 450V MKP transistor bc 567 transistor bc 564
Text: SMD Standard Film RES 1/4 W 1% 100 ppm/°C BC Components 24/35 Supplier AN2393 Table 7 , voltage regulation. The optocoupler transistor modulates the current from Pin 4, so the frequency will , 2.1 Efficiency measurements Table 1 and Table 2 show the output voltage measurements at the , correct output voltage measurement. Table 1. Efficiency measurements @VIN = 115 Vac +24 V(V , 82.58% Table 2. Efficiency measurements @VIN = 230 Vac +24 V(V) @load(A) +12 V(V) @load(A) +5 V


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PDF AN2393 L6599-based L6563 l6599 TRANSISTOR BC 814 r46 arcotronics AN2393 L6599 application note AN1792 L6599 application note l6563 200w arcotronics 1uf 450V MKP transistor bc 567 transistor bc 564
2008 - BLS6G2731-120

Abstract: No abstract text available
Text: -120 LDMOS S-band radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym , BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 - 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF , -120 NXP Semiconductors LDMOS S-band radar power transistor 1.3 Applications I S-band power


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PDF BLS6G2731-120; BLS6G2731S-120 BLS6G2731-120 6G2731S-120
Motorola transistor smd marking codes

Abstract: STMicroelectronics smd marking code TRANSISTOR SMD MARKING CODE 1a SMD codes smd zener diode colour code smd transistor equivalent table maxim smd code Zener diode smd marking codes colour code diode zener motorola ZENER diode marking code
Text: SMD Codes and Markings Written by TKB-4u.com SMD Codes and Markings Identifying the manufacturers' type number of an SMD device from the package code can be a difficult ta SMD devices are, by , code. 1/8 SMD Codes and Markings Written by TKB-4u.com TKB-4u.com has a SMD Code Database , datasheets. Link to SMD Database. How to use the SMD Code Database To identify a particular SMD device , intended to provide help on locating sources of more detailed information if you require it. SMD ID Code


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