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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
BD9V101MUF-LB BD9V101MUF-LB ECAD Model ROHM Semiconductor 16V to 60V, 1A 1ch 2.1MHz Synchronous Buck Converter Integrated FET (Industrial Grade)
BD9G102G-LB BD9G102G-LB ECAD Model ROHM Semiconductor 6V to 42V, 0.5A 1ch Simple Buck Converter Integrated FET (Industrial Grade)
BD9G341AEFJ BD9G341AEFJ ECAD Model ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET
BD9A600MUV BD9A600MUV ECAD Model ROHM Semiconductor 2.7V to 5.5V Input, 6A Integrated MOSFET, Single Synchronous Buck DC/DC Converter
BD9G341AEFJ-LB BD9G341AEFJ-LB ECAD Model ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET (Industrial Grade)
BD9C601EFJ BD9C601EFJ ECAD Model ROHM Semiconductor 4.5V to 18V Input, 6.0A Integrated MOSFET 1ch Synchronous Buck DC/DC Converter

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2009 - SMD Texas Instruments

Abstract: No abstract text available
Text: No file text available


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PDF eZ430-Chronosâ SLAU292F eZ430-Chronos SMD Texas Instruments
2010 - smd transistor marking A6

Abstract: BCV64B 6 pin
Text: VCE = −5 mV; IC = −2 mA 220 - 475 - - −6 220 - 475 Transistor TR2 , ] Transistor TR1 hFE DC current gain VCE = −5 V; IC = −2 mA 220 - 475 VCEsat , BCV64B PNP general-purpose double transistor Rev. 4 — 2 August 2010 Product data sheet 1. Product profile 1.1 General description PNP general-purpose double transistor in a small SOT143B Surface-Mounted Device ( SMD ) plastic package. Table 1. Product overview Type number Package PNP


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PDF BCV64B OT143B OT143B BCV63B AEC-Q101 smd transistor marking A6 BCV64B 6 pin
SMD TRANSISTOR H2A NPN

Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
Text: small, thin surface-mount package. These types of transistor are suitable for low-output AC adapters and ballast lamp applications. Bipolar Power Transistors SMD Series With smaller and thinner , to meet manufacturers’ needs. 2 Bipolar Power Transistor CONTENTS Selection Guide by , . Low-VCE(sat) Bipolar Transistor Series Toshiba power transistors feature a VCEO of 10 V to , ) Transistor + S-MOS 4 ( ) (@) ( ) ( ) TTA003 5 2SC5199 TTA0001 TTA0002 TTC015B


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2010 - Not Available

Abstract: No abstract text available
Text: Metal-Oxide Semiconductor Transistor Mode-S Mode Select RF Radio Frequency SMD Surface , BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor , 960 to 1215 100 10 36 250 13.5 0.8 50 0.1 25 6 0.18 ±5 TCAS 1030 to 1090 32 0.1 36 250 14.0 0.8 50 0 25 6 0.07 ±5 Mode-S 1030 to


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PDF BLA0912-250R OT502A
2010 - Not Available

Abstract: No abstract text available
Text: Semiconductor Transistor Mode-S Mode Select RF Radio Frequency SMD Surface Mounted Device , BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated , 960 to 1215 100 10 36 250 13.5 0.8 50 0.1 25 6 0.18 ±5 TCAS 1030 to 1090 32 0.1 36 250 14.0 0.8 50 0 25 6 0.07 ±5 Mode-S 1030 to


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PDF BLA0912-250 OT502A
2002 - transistor r1012

Abstract: npn smd 2n2222 smd 2DG12 SMD d2b 2n2222 smd DG1 smd transistor SMD D8B SMD diode C715 AN7852 C2559
Text: % variation. This op amp then drives an emitter follower configured transistor Q1. If an offset is not , -5 V - A5 + D4 270 R27 C35 D2 1 7 D5 D6 VIN2 C21 220 C20 , 1 k C17 1 k R42 C10 HF1 + A5 VDD +3.3/+5V OVDD + 47 R14 + A5 C58 , 1 + 2 - OP291 + A5 C59 + C1 C45 6 C44 AGND C2 4 7 -15 V R26 , 4 7 C14 + 2 20 k 2 3 R28 - A5 R3 5.1 k -15 +15 R24 1 k 4


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PDF AN7852 10-Bit SPT7852 10-bit transistor r1012 npn smd 2n2222 smd 2DG12 SMD d2b 2n2222 smd DG1 smd transistor SMD D8B SMD diode C715 AN7852 C2559
2003 - smd transistor 888

Abstract: SMD Transistor A12 smd transistor 2300
Text: LA N CW SMD T O 8 WATTS LAN C-W SERIES - TO 8 WATTS SURFACE MOUNT DEVICE High Power Density , Derating to 71°C • UL/CUL 1950, file #E155800 THE LAN C-W 8 WATT SERIES The LANCW SMD Series of DC/DC converters offers up to 8 Watts of output power in a surface mount package. The LANCW SMD Series is , SMD T O 8 WATTS Input Voltage (VDC) Output Voltage (VDC) Output Current (mA) Efficiency (%) Model Number 9-18 3.3 5 12 15 ±5 ±12 ±15 2000 1500 666 533 ±800 Â


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PDF 1000VDC E155800 36-75VDC 100pF) smd transistor 888 SMD Transistor A12 smd transistor 2300
2000 - A7 SMD TRANSISTOR

Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
Text: SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is manufactured , Columbus (DSCC). The SMD numbers listed here must be used when ordering. ords (Intersi Detailed Electrical Specifications for these devices are contained in SMD 5962-95626. A "hot-link" is provided l , -6664RH/PROTO -55 to 125 Hard, HS9-6664RH/PROTO HS9-6664RH/PROTO -55 to 125 QML, Satellit e, SMD , A8 A6 4 25 A8 A5 5 24 A9 A5 5 24 A9 A4 23 A11 23 A11 A4


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PDF HS-6664RH HS-6664RH HS6664R A7 SMD TRANSISTOR SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
1999 - smd transistor A6

Abstract: y4 smd transistor A7 SMD TRANSISTOR smd transistor A5 y6 smd transistor smd a5 gnd smd transistor A7 smd transistor y5 transistor SMD a6 smd transistor A6 3
Text: by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACTS541T are contained in SMD 5962-96726. A "hot-link" , 125 25 -55 to 125 25 A5 A6 A7 GND 10 ACTS541T (FLATPACK), CDFP4-F20 TOP VIEW OE1 A0 A1 A2 A3 A4 A5 A6 A7 GND 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 VCC OE2 Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 , 18 Y0 4 A2 5 A3 6 A4 7 A5 8 A6 9 GND VCC 10 20 A7 TRUTH TABLE INPUTS OE1 L L H X


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PDF ACTS541T 100kRAD ACTS541T 1-800-4-HARRIS smd transistor A6 y4 smd transistor A7 SMD TRANSISTOR smd transistor A5 y6 smd transistor smd a5 gnd smd transistor A7 smd transistor y5 transistor SMD a6 smd transistor A6 3
2002 - 6kaa

Abstract: SMD Transistor A12 SMD T28 smd A4 SMD a6 Transistor SMD a7 Transistor smd transistor a4 5962R9562601TXC 5962R9562601TYC CDFP3-F28
Text: / 25 A8 A5 5 Detailed Electrical Specifications for the HS-666s4RH-T are contained in SMD , for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD , 26 NC A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 7 22 G A2 , Diagram MSB A2 A3 A4 A5 A6 A7 A8 LSB A LATCHED ADDRESS REGISTER 8 256 GATED ROW , TRANSISTOR COUNT: 110, 874, (27,719 Gates) SUBSTRATE POTENTIAL: PROCESS: VDD AVLSI BACKSIDE


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PDF HS-6664RH-T 100kRAD FN4609 MIL-PRF-38535 HS-6664RH-T 6kaa SMD Transistor A12 SMD T28 smd A4 SMD a6 Transistor SMD a7 Transistor smd transistor a4 5962R9562601TXC 5962R9562601TYC CDFP3-F28
1999 - smd transistor a9

Abstract: A7 SMD TRANSISTOR smd transistor A8 smd transistor A6 SMD Transistor A12 SMD A8 Transistor HS1-6664RH-T smd transistor A11 smd transistor a4 SMD T28
Text: A12 2 A7 3 26 NC A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 G A2 8 21 , Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the HS-666s4RH-T are contained in SMD 5962-95626. A "hot-link" is provided , 1 A12 A5 ORDERING INFORMATION NC TEMP. RANGE (oC) 14 15 DQ3 P must be , . HS-6664RH-T Functional Diagram MSB A2 A3 A4 A5 A6 A7 A8 LSB A LATCHED ADDRESS


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PDF HS-6664RH-T 100kRAD MIL-PRF-38535 HS-6664RH-T smd transistor a9 A7 SMD TRANSISTOR smd transistor A8 smd transistor A6 SMD Transistor A12 SMD A8 Transistor HS1-6664RH-T smd transistor A11 smd transistor a4 SMD T28
2002 - transistor SMD Y1

Abstract: y4 smd transistor y1 smd transistor y6 smd transistor smd transistor A6 A7 SMD TRANSISTOR 5962R9672602TRC 5962R9672602TXC ACTS541DTR-02 ACTS541KTR-02
Text: the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACTS541T are contained in SMD 5962-96726. For more information , Y7 -55 to 125 5962R9672602TXC 5 GND 10 ACTS541DTR-02 17 Y1 A5 5962R9672602TRC , Y0 A2 4 17 Y1 A3 5 16 Y2 A4 6 15 Y3 A5 7 14 Y4 A6 , VCC 6 14 A4 Y4 GND VCC 7 13 A5 Y5 GND VCC 8 12 A6 Y6 GND VCC


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PDF ACTS541T FN4612 MIL-PRF-38535 100kRAD ACTS541T transistor SMD Y1 y4 smd transistor y1 smd transistor y6 smd transistor smd transistor A6 A7 SMD TRANSISTOR 5962R9672602TRC 5962R9672602TXC ACTS541DTR-02 ACTS541KTR-02
1999 - smd transistor A6

Abstract: y4 smd transistor y6 smd transistor Transistor SMD a7 Y5 smd transistor smd transistor A7 y1 smd transistor smd transistor A5 A7 SMD TRANSISTOR 5962R9672602TXC
Text: Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD , contained in SMD 5962-96726. A "hot-link" is provided from our website for downloading. www.intersil.com , 12 Y6 GND 10 ACTS541KTR-02 5 11 Y7 -55 to 125 5962R9672602TXC 17 Y1 A5 , 5 16 Y2 A4 6 15 Y3 A5 7 14 Y4 A6 8 13 Y5 A7 9 12 , 14 A4 Y4 GND VCC 7 13 A5 Y5 GND VCC 8 12 A6 Y6 GND VCC 9 GND


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PDF ACTS541T 100kRAD ACTS541T smd transistor A6 y4 smd transistor y6 smd transistor Transistor SMD a7 Y5 smd transistor smd transistor A7 y1 smd transistor smd transistor A5 A7 SMD TRANSISTOR 5962R9672602TXC
Not Available

Abstract: No abstract text available
Text: Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD , €¢ Sensor Monitoring Detailed Electrical Specifications for the ACS05MS are contained in SMD 5962-98602 , ¸2 4 11 □ A5 A2 [ 3 12] W Y 2 [T TT| A5 A3 5 10 □ Ÿ5 A3 [ 5 To] Ÿ5 Ÿ3 6 9 □ A4 GND 7 8 □ Ÿ4 Ÿ 3 [ë GND 9 ] A4 [T F |Å , Case Current Density: <2.0 x 105 A/cm 2 Transistor Count: 46 SUBSTRATE POTENTIAL Unbiased


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PDF ACS05MS ACS05MS MIL-PRF-38535 1-800-4-HARRIS
2003 - Not Available

Abstract: No abstract text available
Text: 8.3×6.9 1 1 1 ≤5 EEVFC1E101P EEFWA1A121P Panasonic, Aluminum FC (Radial) FK ( SMD ) 16 , 8×6.7 8×10 8×11.5 1 1 1 1 ≤5 ≤4 1 ≤4 Nichicon, Aluminum WG, Aluminum ( SMD ) PM , 3225 mm 1 2 [1] ≤5 ≤5 C1210C106M4PAC C1210C476K9PAC Murata, Ceramic X5R ( SMD ) 6.3 , €“ 2.5 V (Adjust) Description Horiz. T/H SMD , Standard (3) Pkg Ref. (EUU) (EUV) (2) Notes: (1) Add “T” to end of part number for tape and reel on SMD packages only. (2) Reference the


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PDF PTH03050W SLTS212C EN60950
2003 - Not Available

Abstract: No abstract text available
Text: , Ceramic X5R ( SMD ) 16 V 6.3 V 10 47 0.002 Ω — 1210 case 3225 mm 1 1 ≤5 ≤5 , SMD , Standard (3) Pkg Ref. (2) (EUW) (EUY) Notes: (1) Add “T” to end of part number for tape and reel on SMD packages only. (2) Reference the applicable package reference drawing for the , characteristics. use either a low ESR tantalum, Os-Con, or ceramic capacitor. (ii) During reflow of SMD package , €” — — — — — — — — — 3.4 70 100 ±5 – 8 (3) — — 4.3 3.7


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PDF PTH05060W SLTS216B EN60950
Not Available

Abstract: No abstract text available
Text: to SMD 5962F9683001VPA The HS-1145RH is a high speed, low power current feed­ back amplifier , specifications are contained in SMD 5962F9683001VPA, available on the Harris W ebsite or AnswerFAX systems , Harris Part Numbers to SMDs. The address is (http://www.semi.harris.com/datasheets/ smd /smd_xref. html). SMD numbers must be used to order Radiation Hard­ ened Products. Applications Multiplexed Flash , current. In this approach, a composite device replaces the traditional PNP pulldown transistor . The com Â


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PDF HS-1145RH 5962F9683001VPA HS-1145RH MIL-PRF-38535. IL-PRF-38535 360MHz 1500nm 483nm
2005 - Not Available

Abstract: No abstract text available
Text: variation –40°C < TA < 85°C Line regulation Over VI range ±5 Load regulation Over IO range ±5 Total output variation Includes set-point, line, load, –40°C ≤ TA ≤ 85 , 330 WA( SMD ) 6.3 150 FK ( SMD ) 6.3 PSA,Poly- Aluminum (Radial) Quantity Max , LXZ10VB471M8X12LL MVZ, Auminum-( SMD ) 16 680 0.09 670 10 × 10 1 1 MVZ16VC681MJ10TP PXA, Poly-Aluminum ( SMD ) 10 120 0.027 2800 8 × 6,7 1 ≤3 PXA10VC121MH70TP Nichicon


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PDF PTV03010W SLTS241 EN60950
2005 - Not Available

Abstract: No abstract text available
Text: C3225X5R0J476MT 16 22 ≥1 (2) ≤5 C3225X5R1C226MT 16 TDK, Ceramic X5R ( SMD ) Value , Over VI range ±5 Load regulation Over IO range ±5 Total output variation Includes , 330 WA( SMD ) 6.3 150 FK ( SMD ) 6.3 PSA,Poly- Aluminum (Radial) Quantity Max , LXZ10VB471M8X12LL MVZ, Auminum-( SMD ) 16 680 0.09 670 10 × 10 1 1 MVZ16VC681MJ10TP PXA, Poly-Aluminum ( SMD ) 10 120 0.027 2800 8 × 6,7 1 ≤3 PXA10VC121MH70TP Nichicon


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PDF PTV05010W SLTS242 EN60950
2003 - Not Available

Abstract: No abstract text available
Text: , Ceramic X5R ( SMD ) 16 V 6.3 V 10 47 0.002 Ω — 1210 case 3225 mm 1 1 ≤5 ≤5 , SMD , Standard (3) Pkg Ref. (2) (EUW) (EUY) Notes: (1) Add “T” to end of part number for tape and reel on SMD packages only. (2) Reference the applicable package reference drawing for the , characteristics. use either a low ESR tantalum, Os-Con, or ceramic capacitor. (ii) During reflow of SMD package , €” — — — — — — — — — 3.4 70 100 ±5 – 8 (3) — — 4.3 3.7


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PDF PTH05060W SLTS216B EN60950
2003 - Not Available

Abstract: No abstract text available
Text: ) Description Horiz. T/H SMD , Standard (3) Pkg Ref. (2) (EUW) (EUY) Notes: (1) Add “T” to end of part number for tape and reel on SMD packages only. (2) Reference the applicable package reference , reflow of SMD package version do not elevate peak temperature of the module, pins or internal components , €” — — — — — — — — — — — — — 2.2 70 100 ±5 – 8 (4) â , ) FK ( SMD ) FC ( SMD ) 10 V 25 V 16 V 330 470 330 0.117 Ω 0.080 Ω 0.150 Ω 555 mA


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PDF PTH03060W SLTS215B EN60950
2003 - Not Available

Abstract: No abstract text available
Text: 1 1 ≤5 ≤5 C1210C106M4PAC C1210C476K9PAC Murata, Ceramic X5R ( SMD ) 6.3 V 6.3 V , ) Description Horiz. T/H SMD , Standard (3) Pkg Ref. (EUH) (EUJ) (2) Notes: (1) Add “T” to end of part number for tape and reel on SMD packages only. (2) Reference the applicable package , °C °C G’s G’s grams Meets UL 94V-O Notes: (i) During reflow of SMD package version do , €” — — — — — — — — — — — — — — 3.4 70 100 ±5 – 8


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PDF PTH05010W SLTS204C EN60950
1999 - Y5 smd

Abstract: y6 smd transistor ACS04MS "silicon on sapphire" cmos SENSOR 15um SMD TRANSISTOR Y1 smd transistor y5 y4 smd transistor ACS04DMSR-03 ACS04HMSR-03
Text: devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. Detailed Electrical Specifications for the ACS04MS are contained in SMD , 3 12 Y6 A2 3 12 Y6 Y2 4 11 A5 A3 5 10 Y5 Y3 6 9 A4 GND 7 Y2 4 11 A5 A3 5 10 Y5 Y3 6 9 A4 GND 7 8 Y4 8 Y4 1 , : <2.0 x 105 A/cm2 Transistor Count: 82 SUBSTRATE POTENTIAL: Unbiased Insulator Metallization


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PDF ACS04MS ACS04MS MIL-PRF-38535 Y5 smd y6 smd transistor "silicon on sapphire" cmos SENSOR 15um SMD TRANSISTOR Y1 smd transistor y5 y4 smd transistor ACS04DMSR-03 ACS04HMSR-03
2003 - Not Available

Abstract: No abstract text available
Text: —4.1H 1 1 ≤5 ≤5 TPSE477M010R0045 TPSV477M010R0060 Kemet, Poly-Tantalum T520, ( SMD ) T530 , Horiz. T/H SMD , Standard (3) Pkg Ref. (EUH) (EUJ) (2) Notes: (1) Add “T” to end of part number for tape and reel on SMD packages only. (2) Reference the applicable package reference drawing , reflow of SMD package version do not elevate peak temperature of the module, pins or internal components , €” — — — — — — 2.2 70 100 ±5 – 8 (4) — — 2.45 2.5 — — â


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PDF PTH03010W SLTS203C EN60950
2002 - A7 SMD TRANSISTOR

Abstract: smd transistor A6 b6 smd transistor smd transistor A7 SMD TRANSISTOR B7 SMD a7 Transistor smd transistor A5 a6 smd transistor 13KA smd transistor b3
Text: Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering. · , in SMD 5962-95745. Visit our website at www.intersil.com/ HCTS245DTR (SBDIP), CDIP2-T20 TOP VIEW , 12 B6 GND 10 11 B7 -55 to 125 5962R9574501TXC 17 B1 5 A5 5962R9574501TRC 4 , 18 B0 A2 4 17 B1 A3 5 16 B2 A4 6 15 B3 A5 7 14 B4 , ±1kÅ TRANSISTOR COUNT: SUBSTRATE POTENTIAL: 274 Unbiased Silicon on Sapphire PROCESS


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PDF HCTS245T FN4619 MIL-PRF-38535 100kRAD HCTS245T A7 SMD TRANSISTOR smd transistor A6 b6 smd transistor smd transistor A7 SMD TRANSISTOR B7 SMD a7 Transistor smd transistor A5 a6 smd transistor 13KA smd transistor b3
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