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Part Manufacturer Description Datasheet Download Buy Part
LTC3400BES6#TR Linear Technology LTC3400B - 600mA, 1.2MHz Micropower Synchronous Boost Converters in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LTC3400ES6 Linear Technology LTC3400 - 600mA, 1.2MHz Micropower Synchronous Boost Converters in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LTC3400BES6#TRM Linear Technology LTC3400B - 600mA, 1.2MHz Micropower Synchronous Boost Converters in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LTC3400BES6#TRPBF Linear Technology LTC3400B - 600mA, 1.2MHz Micropower Synchronous Boost Converters in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LTC3400ES6-1 Linear Technology LTC3400-1 - 600mA, 1.2MHz Micropower Synchronous Boost Converter in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LTC3400BES6#TRMPBF Linear Technology LTC3400B - 600mA, 1.2MHz Micropower Synchronous Boost Converters in ThinSOT; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C

smd transistor 3400 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2013 - Not Available

Abstract: No abstract text available
Text: Semiconductors Power LDMOS transistor 7.5 Graphical data 7.5.1 CW VDS = 28 V; IDq = 3400 mA. VDS = , Semiconductors Power LDMOS transistor 7.5.2 Pulsed CW VDS = 28 V; IDq = 3400 mA. VDS = 28 V; IDq = , Power LDMOS transistor 7.5.3 IS-95 VDS = 28 V; IDq = 3400 mA. VDS = 28 V; IDq = 3400 mA. (1 , BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 — 6 June 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved


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PDF BLF8G20LS-400PV; BLF8G20LS-400PGV BLF8G20LS-400PV LS-400PGV
2013 - Not Available

Abstract: No abstract text available
Text: Semiconductors Power LDMOS transistor 7.5 Graphical data 7.5.1 CW VDS = 28 V; IDq = 3400 mA. VDS = , Semiconductors Power LDMOS transistor 7.5.2 Pulsed CW VDS = 28 V; IDq = 3400 mA. VDS = 28 V; IDq = , Power LDMOS transistor 7.5.3 IS-95 VDS = 28 V; IDq = 3400 mA. VDS = 28 V; IDq = 3400 mA. (1 , BLF8G20LS-400P(G)V NXP Semiconductors Power LDMOS transistor VDS = 28 V; IDq = 3400 mA. VDS = 28 , BLF8G20LS-400P(G)V NXP Semiconductors Power LDMOS transistor VDS = 28 V; IDq = 3400 mA. VDS = 28


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PDF BLF8G20LS-400PV; BLF8G20LS-400PGV BLF8G20LS-400PV LS-400PGV
2014 - transistor SMD g 28

Abstract: No abstract text available
Text: NXP Semiconductors Power LDMOS transistor 7.5.2 IS-95 VDS = 28 V; IDq = 3400 mA. VDS = 28 , NXP Semiconductors Power LDMOS transistor VDS = 28 V; IDq = 3400 mA. VDS = 28 V; IDq = 3400 , transistor VDS = 28 V; IDq = 3400 mA. VDS = 28 V; IDq = 3400 mA. (1) f = 1805 MHz (1) f = 1805 , BLF8G20LS-400P(G)V NXP Semiconductors Power LDMOS transistor VDS = 28 V; IDq = 3400 mA. (1) f = , BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 3 — 3 June 2014 Product data


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PDF BLF8G20LS-400PV; BLF8G20LS-400PGV BLF8G20LS-400PV LS-400PGV transistor SMD g 28
2013 - BLF6G38S-25

Abstract: transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
Text: ferrite SMD bead SMD resistor SMD resistor Table 10. f MHz 3400 3450 3500 3550 3600 Value 20 9.1 Remarks , BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 3 - 11 March 2013 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at , (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 4.5 Gp (dB) 15 D (%) 24 ACPR885k ACPR1980k (dBc


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 transistor equivalent table BDS3/3/4.6-4S2 BDS3/3/4.6-4S2-Z
2008 - TRANSISTOR j412

Abstract: J412 - TRANSISTOR SMD BLF6G38S-25
Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 - 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at , (MHz) 3400 to 3600 VDS (V) 28 PL(AV) (W) 4.5 Gp (dB) 15 D (%) 24 ACPR885k ACPR1980k (dBc , probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 TRANSISTOR j412 J412 - TRANSISTOR SMD
2008 - smd transistor equivalent table

Abstract: smd transistor 3400 J412 - TRANSISTOR SMD BLF6G38S-25 RF35 cdma QPSK modulation Walsh pilot C5750X7R1H106M C4532X7R1H475M BLF6G38-25 BDS3/3/4.6-4S2-Z
Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 - 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance , ) (dBc) 3400 to 3600 28 4.5 15 24 -45[2] -61[2] [1] Single carrier IS-95 with , MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V and an IDq of 225 mA


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PDF BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 smd transistor equivalent table smd transistor 3400 J412 - TRANSISTOR SMD RF35 cdma QPSK modulation Walsh pilot C5750X7R1H106M C4532X7R1H475M BDS3/3/4.6-4S2-Z
2008 - C5750X7R1H106M

Abstract: 30RF35
Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 - 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF , ) PL(p) Gp D (MHz) 1-carrier N-CDMA[1] (V) (W) (W) (dB) (%) 3400 to 3600 28 , % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and


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PDF BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100 C5750X7R1H106M 30RF35
2008 - transistor BV-1 501

Abstract: smd 501 transistor C5750X7R1H106M 30RF35 BLF6G38-50 BLF6G38LS-50 RF35 VJ1206Y104KXB
Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 01 - 12 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance , (M)[1] Gp (MHz) Mode of operation (V) (W) (W) (dB) (%) (dBc) (dBc) 3400 to , frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of


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PDF BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50 BLF6G38LS-50 transistor BV-1 501 smd 501 transistor C5750X7R1H106M 30RF35 RF35 VJ1206Y104KXB
2011 - Not Available

Abstract: No abstract text available
Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 — 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF , ) PL(M) [1] Gp (MHz) Mode of operation (V) 3400 to 3600 28 D (W) (W) (dB) (% , is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V and an IDq


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PDF BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100
2011 - Not Available

Abstract: No abstract text available
Text: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 - 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF performance at , [3] (dB) (%) 3400 to 3600 28 21.5 47.5[3] PL(M) stands for peak output power. Single , probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a


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PDF BLF6G38-100; BLF6G38LS-100 ACPR885k ACPR1980k BLF6G38-100 6G38LS-100
2014 - Not Available

Abstract: No abstract text available
Text: Semiconductor Transistor MTF Median Time to Failure PAR Peak-to-Average Ratio SMD Surface , BLF8G38LS-75V Power LDMOS transistor Rev. 3 — 1 July 2014 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF , ) (mA) (V) (W) 1-carrier W-CDMA 3400 to 3800 600 30 20 [1] IDq VDS PL


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PDF BLF8G38LS-75V
2009 - TRANSISTOR J601

Abstract: gp816 RF35 J2396 J249
Text: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 - 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance RF performance at Tcase , ) (MHz) 1-carrier N-CDMA[1] f (V) 3400 to 3600 28 [1] Single carrier N-CDMA with pilot , Substances (RoHS) BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 1.3


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PDF BLF6G38-10; BLF6G38-10G ACPR885k ACPR1980k BLF6G38-10 BLF6G38-10G TRANSISTOR J601 gp816 RF35 J2396 J249
2014 - Not Available

Abstract: No abstract text available
Text: BLF8G38LS-75V Power LDMOS transistor Rev. 2 — 9 January 2014 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance , signal f (MHz) (mA) (V) (W) 1-carrier W-CDMA 3400 to 3800 600 30 20 [1 , video bandwidth Designed for broadband operation ( 3400 MHz to 3800 MHz) Lower output capacitance for


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PDF BLF8G38LS-75V
2010 - 30RF35

Abstract: BLF6G38-50 BLF6G38LS-50 C5750X7R1H106M RF35 VJ1206Y104KXB
Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 - 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance , ) ACPR885k (dBc) ACPR1980k (dBc) Mode of operation f (MHz) 1-carrier N-CDMA[2] 3400 to 3600 28 9 , 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of 14 dB, a


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PDF BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50 30RF35 BLF6G38LS-50 C5750X7R1H106M RF35 VJ1206Y104KXB
2013 - Not Available

Abstract: No abstract text available
Text: LDMOS transistor 7.3 Graphical data 7.3.1 Pulsed CW VDS = 30 V; IDq = 600 mA. (1) f = 3400 MHz , LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor PAR Peak-to-Average Ratio SMD , BLF8G38LS-75V Power LDMOS transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance


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PDF BLF8G38LS-75V
2010 - Not Available

Abstract: No abstract text available
Text: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 — 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance , (%) ACPR885k (dBc) ACPR1980k (dBc) Mode of operation f (MHz) 1-carrier N-CDMA[2] 3400 to 3600 , frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of


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PDF BLF6G38-50; BLF6G38LS-50 ACPR885k ACPR1980k BLF6G38-50
smd 8550 transistor

Abstract: smd transistor 3400 365-1447 8550 smd transistor nd250 OPIA405CTU OPIA400ATR 365-1460-2-ND OPI1264A OPIA412ATU
Text: output Schottky transistor . Forward DC Current (mA) 40 40 40 50 Reverse DC DC Current , /4 5/4 5/4 5/4 2/3 2/3 2/3 2/3 0.3/0.3 0.4/0.3 7/2 10/5 45/45 SMD SMD SMD DIP SSOP SSOP SSOP SSOP SMD SMD SMD DIP SSOP SSOP SSOP SSOP SSOP SSOP SSOP SMD SMD SMD DIP SSOP SSOP SSOP SSOP SMD SMD SMD DIP SSOP SSOP SSOP SSOP SMD SMD SMD DIP SSOP DIP DIP , -ND .47 34.00 78.63 365-1437-ND .47 34.00 78.63 365-1417-1-ND .78 50.40 108.00 365-1417-2


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PDF OPI1264 OPI155 365-1031-ND 365-1032-ND 365-1033-ND 365-1034-ND OPIA802DTU OPIA803DTU OPIA800DTU OPIA801DTU smd 8550 transistor smd transistor 3400 365-1447 8550 smd transistor nd250 OPIA405CTU OPIA400ATR 365-1460-2-ND OPI1264A OPIA412ATU
smd led 7020

Abstract: RZ4855HDPO RZ4825HAPO RZ4825HDPO smd 8550 transistor RZ4855HAPO Triac 4050 4825-AA12 three phase triac control 300 amp 4850AA12
Text: Switching cDirect Copper Bonding and SMD Technology cZero Switching for Resistive/Motor Loads cNo Internal , RM1A23D25 42-265 25 A 30.00 28.50 27.00 251-2010 251-0091 RM1A23D50 42-265 50 A 34.00 32.30 30.60 , RS1A48D40 42-530 40 A 34.00 32.30 30.60 20-265 VAC/DC Control DC Switching Relay 251-1057 RZ4825HAPO 12-530 V 25 A 185.00 175.75 166.50 251-1059 RZ4855HAPO 12-530 V 55 A 207.00 196.65 186.30 Transistor


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PDF RHS90 RHS112 RHS100* 2425-AA06 RHS301* 2450-AA06 4825-AA12 RHS301F115C* RHS301 4850-AA12 smd led 7020 RZ4855HDPO RZ4825HAPO RZ4825HDPO smd 8550 transistor RZ4855HAPO Triac 4050 three phase triac control 300 amp 4850AA12
2012 - ROGERS DUROID

Abstract: BLS6G2735L-30
Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 3 - 24 September 2012 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar , -30; BLS6G2735LS-30 S-band LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description , 2 of 17 NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 5 , BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 7. Application information 7.1 Circuit information


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PDF BLS6G2735L-30; BLS6G2735LS-30 BLS6G2735L-30 6G2735LS-30 ROGERS DUROID
2012 - Not Available

Abstract: No abstract text available
Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 2 — 4 September 2012 Preliminary data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar , transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline , Semiconductors BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 5. Thermal characteristics Table 5 , -30; BLS6G2735LS-30 NXP Semiconductors S-band LDMOS transistor 7. Application information 7.1 Circuit


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PDF BLS6G2735L-30; BLS6G2735LS-30 BLS6G2735L-30 6G2735LS-30
2012 - CGH35060

Abstract: No abstract text available
Text: nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high , pulsed amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package , 3250 3300 3350 3400 3450 3500 0% 3550 Frequency (MHz) Copyright © 2012 Cree , Frequency (MHz) 3100 3200 3300 3400 3500 1 Z Source 3.6 -j13.5 3.6 -j12.8 3.5 -j12.1 3.5 -j11.4 3.3 , are not source and load pull data derived from the transistor . Electrostatic Discharge (ESD


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PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 CGH35060
2013 - Not Available

Abstract: No abstract text available
Text: nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high , pulsed amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package , 3350 3400 3450 3500 0% 3550 Frequency (MHz) Copyright © 2013-2014 Cree, Inc. All , 7.1 -j7.7 3300 3.5 -j12.1 6.5 -j6.8 3400 3.5 -j11.4 6.0 -j5.9 3500 3.3 -j10.7 , transistor . 1 Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test


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PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2
2005 - NDH2412S

Abstract: NDH2415S NDH4812S NDH4815S A 1908 transistor
Text: use of ceramic capacitors and a ceramic substrate, and SMD construction, provide genuine high , transistor , and the switch off mechanism for the NDH works by forward biasing this NPN transistor . If the pin , . 3400 E Britannia Drive, Tucson, Arizona 85706, USA Tel: +44 (0)1908 615232 Fax: +44 (0)1908 617545


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PDF NDH2412S NDH2415S NDH4812S NDH4815S NDH2412S NDH2415S NDH4812S NDH4815S A 1908 transistor
2013 - Not Available

Abstract: No abstract text available
Text: nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high , pulsed amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package , 3350 3400 3450 3500 0% 3550 Frequency (MHz) Copyright © 2013 Cree, Inc. All rights , 3.5 -j12.1 6.5 -j6.8 3400 3.5 -j11.4 6.0 -j5.9 3500 3.3 -j10.7 5.6 -j5.1 Note , demonstration circuit and are not source and load pull data derived from the transistor . 1 Electrostatic


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PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2
Not Available

Abstract: No abstract text available
Text: Thermistors SMD Q Meggitt Citec n.t.c. chip thermistor Key features • 12:06 or 08:05 packages < suitable for bonding or pick and place • solvent resistant coating • temperature range , 3300 3300 3400 3400 4100 3400 4100 4100 3500 3750 3750 3950 4000 4000 4000 4100 4100 , mounting directly onto 80 150 800 1K7 1K7 2K 7 2K 7 4K 7 47K 2750 2800 3300 3400 4100 3400 4100 3500 4000 O o o o o o o o o o o o o o o o o o o o o o o o o


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