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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

smd transistor 12W 98 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - AIRBORNE DME

Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
Text: transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz. The high voltage MOSFET , Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty ! For Airborne DME Applications ! ! ! ! ! ! ! , -! 3! 3! 3! 3! RZ! RZ! a! F! Typical performance at 1025MHz with an input power of 12W , -01-DS18A 07/15/2010 2 HVV1012-550 High Voltage, High Ruggedness L-Band High Power Pulsed Transistor , TCASE = 25°C 2) All parameters measured under pulsed conditions at 12W input power measured at the 10


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PDF HVV1012-550 1025MHz 1150MHz. AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
1999 - 07n60c2

Abstract: TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent smd transistor 12W 55 SPU07N60C2 SPD07N60C2
Text: SPD07N60C2 SPU07N60C2 Preliminary data Cool MOSTM Power Transistor C OLMOS O Power , , leaded RthJA - - 75 SMD version, device on PCB: RthJA @ min. footprint - - , Turn-on delay time t d(on) VDD=380V, VGS=0/13V, - 11 - Rise time tr ID=7.3A, R G= 12W , 98 % 0.8 0.0 -60 -20 20 60 100 °C 180 Tj ID Page 6 2000-05-08 , VGS 0,2 VDS max 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C ( 98 %) 2


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PDF SPD07N60C2 SPU07N60C2 O-251 O-252 P-TO251 P-TO252 Q67040-S4312 07N60C2 07n60c2 TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent smd transistor 12W 55 SPU07N60C2 SPD07N60C2
1999 - TRANSISTOR SMD MARKING CODE 12w

Abstract: smd transistor marking 12W transistor SMD 12W 07N60C2 smd transistor code 12w smd transistor 12W 98 smd transistor 12w 12W SMD MARKING CODE 12W smd transistor smd transistor 12W 55
Text: SPP07N60C2 SPB07N60C2 Preliminary data Cool MOSTM Power Transistor C OLMOS O Power , RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 , Turn-on delay time t d(on) VDD=380V, VGS=0/13V, - 11 - Rise time tr ID=7.3A, R G= 12W , 98 % 0.8 0.0 -60 -20 20 60 100 °C 180 Tj ID Page 6 2000-05-08 , VGS 0,2 VDS max 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C ( 98 %) 2


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PDF SPP07N60C2 SPB07N60C2 P-TO263-3-2 P-TO220-3-1 Q67040-S4309 07N60C2 Q67040-S4310 TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W 07N60C2 smd transistor code 12w smd transistor 12W 98 smd transistor 12w 12W SMD MARKING CODE 12W smd transistor smd transistor 12W 55
transistor SMD 12W MOSFET

Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
Text: an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from , Voltage, H igh Ruggedness L-Band High Power Pulsed Transistor 1030/1090 MHz, 50µs Pulse, 2% Duty ! , ! Typical performance at 1030 MHz at an input power of 12W . ! 8(F! Transistor 1030/1090 MHz, 50µs Pulse, 2% Duty ! , parameters measured under pulsed conditions at 12W input power measured at the 10% point of the pulse with


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PDF HVV1011-600 1030MHz 1090MHz. transistor SMD 12W MOSFET transistor SMD 12W transistor JE 1090 smd transistor code 12w
2012 - transistor BD 222 SMD

Abstract: D13005 transistor SMD 12W D13005 transistor transistor SMD 12W MOSFET D13005 E transformer winding formula 220v Ac to 12v Dc
Text: Output Cord Resistance Compensation The ACT337 is optimized for compact size 7W to 12W charger , €¢ Adjustable Power from 7W to 12W • Minimum External Components • SOP-8 Package APPLICATIONS • RCC , DESCRIPTION 1 SW Switch Drive. Switch node for the external NPN transistor . Connect this pin to the , transistor . -2- www.active-semi.com Copyright © 2012 Active-Semi, Inc. ACT337 Rev 2, 14 , full load 40 kHz FCLAMP 89 98 107 kHz DMAX 65 75 85 % Effective


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PDF ACT337 14-Nov-12 ACT337 transistor BD 222 SMD D13005 transistor SMD 12W D13005 transistor transistor SMD 12W MOSFET D13005 E transformer winding formula 220v Ac to 12v Dc
2000 - transistor SMD 12W MOSFET

Abstract: SMD Code 12W SOT23 smd transistor code 12w transistor SMD 12W ICE2B265 ICE2B265 Application Note HV cascode smps SPA02N60-C3 ICE2B265 equivalent smd transistor 12W 52
Text: power is up to 12W shared to both outputs. One typical application is shown in figure 1 below. Figure 1: Principle application of the HV-Bias circuit 2 Features The 12W HV-BIAS demonstration board , to 800VDC a transistor with 1200V to 1500V breakdown capability is necessary. This makes the design , used together with a further 600V or 800V CoolMOSTM transistor . The user of this module is able to , transistor is achieved. Technical specification: Input Voltage Range: 1201) VDC . 800VDC Total


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PDF ICE2B265 SPA02N80 ICE2B265 transistor SMD 12W MOSFET SMD Code 12W SOT23 smd transistor code 12w transistor SMD 12W ICE2B265 Application Note HV cascode smps SPA02N60-C3 ICE2B265 equivalent smd transistor 12W 52
2000 - transistor SMD 12W MOSFET

Abstract: transistor SMD 12W SMD Code 12W SOT23 ICE2B265 Application Note AN-EvalMF2-ICE2A0565Z-1 ICE1B265 smd transistor code 12w HV cascode smps ICE2B265 smd transistor 12w
Text: 12W shared to both outputs. One typical application is shown in figure 1 below. Figure 1: Principle application of the HV-Bias circuit 2 Features The 12W HV -BIAS demonstration board shows a , transistor with 1200V to 1500V breakdown capability is necessary. This makes the design expensive and , together with a further 600V or 800V CoolMOSTM transistor . The user of this module is able to supply , CoolMOSTM transistor is achieved. Technical specification: 1) Input Voltage Range: 120 VDC .


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PDF ICE2B265 SPA02N80 ICE1B265 transistor SMD 12W MOSFET transistor SMD 12W SMD Code 12W SOT23 ICE2B265 Application Note AN-EvalMF2-ICE2A0565Z-1 ICE1B265 smd transistor code 12w HV cascode smps smd transistor 12w
2013 - smd transistor 12W 13

Abstract: transistor SMD 12W MOSFET smd transistor 12W 3 pins transistor SMD 12W D13005 E D13005 D13005 transistor smd transistor 12W 55
Text: Primary Inductance Compensation The ACT365 is optimized for compact size 6W to 12W adapter , and CEC Average Efficiency Standards • Dedicate Adapter Application from 6W to 12W , ACT365SH-T (SOP-8) -1- 85-265VAC TYPICAL APPLICATION 5V/2.1A Po MAX 12W www.active-semi.com , . Innovative PowerTM DESCRIPTION Switch Drive. Switch node for the external NPN transistor . Connect this , . Ground. Base Drive. Base driver for the external NPN transistor . Power Supply. This pin provides bias


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PDF ACT365 10-Jan-13 ACT365 150mW smd transistor 12W 13 transistor SMD 12W MOSFET smd transistor 12W 3 pins transistor SMD 12W D13005 E D13005 D13005 transistor smd transistor 12W 55
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic , < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - , ) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched MGF09151P TYPICAL CHARACTERISTICS < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - , GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched


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PDF MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA
BTD12-12W

Abstract: 12W 60 BTD12-05S200S BTDXX-12SXXX 12S100 BTD05-05S200S BTD24-05S200D SMD 12W 12W 10 SMD
Text: 87 86 84 86 88 86 N ote l : Specify the type in the "X " o f the model name. D:DIP type, S: SMD type Ex.) DIP type: BTD05-03S250D, SMD type: BTD05-03S250S Note2 : The output voltage inside () is when , .7) Outline SMD type W =22.6 L=38.9 H=8.5 typ.(mm) (For detail dimensions, refer to the outline on p.8) NOTE , -05S200D BTD05-05S200S BTD05-12S80D BTD05-12S80S BTD05- 12W 40D BTD05- 12W 40S BTD12-03S250D BTD12-03S250S BTD12-05S200D BTD12-05S200S BTD12-12S100D BTD12-12S100S BTD12- 12W 45D BTD12- 12W 45S BTD24-03S250D BTD24-03S250S BTD24


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PDF AC500V BDD20070926 BTD12-12W 12W 60 BTD12-05S200S BTDXX-12SXXX 12S100 BTD05-05S200S BTD24-05S200D SMD 12W 12W 10 SMD
2011 - 12W SMD

Abstract: No abstract text available
Text: < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold , gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched MGF09151P TYPICAL , ) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched MGF09151P TYPICAL CHARACTERISTICS , / 1.2W SMD / Plastic Mold non - matched MGF0951P S PARAMETERS (Ta=25C,VD=10V,ID=200mA, Reference , ) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched MGF0951P TEST FIXTURE : f=2.15GHz Vg


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PDF MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA 12W SMD
2007 - 16 ohm 0.25w SPEAKER

Abstract: 8 ohm 0.25w SPEAKER riaa preamplifier circuit diagram lm4562 lm4562 preamplifier circuit diagram 5v 3W stereo AMPLIFIER smd-16 smd 58w 8 ohm 1w 8 ohm 1.4W speaker data Speaker 0.5w/8 Piezo Ceramic Microphones
Text: -step Mono 1.2W 27 mW I2C/SPI 10 2.2V to 5.5V 2.7V to 5.5V micro SMD -30 LM4851 1 1 , 5V micro SMD -42 Stereo 1.2W 80 mW I2C/SPI 8 2.7V to 4V 2.7V to 5.5V micro , =3.6V 2.4V - 5.5V Shutdown (L) micro SMD -9 (0.4 mm pitch), LLP-8 x 1.9W 1.2W 2.5W 1.5W , -8, micro SMD -8 LM4820 0.2W 0.2W NA 0.4W NA 0.9W 0.3W 0.25W NA 0.55W NA , 0.35W NA 1.1W 0.4W 0.35W NA 0.42W NA 1.2W 0.10% Po=0.4W @ Vs=5V 2.2V to


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5v 3W stereo AMPLIFIER smd

Abstract: A1t smd sl 043w TSS0P20 MS0P10 TIL71 semiconductor smd ad 5.9 lm4862 lm4871 LM4671
Text: 0.50% Po=0.1W@Vs=3V 2.7V-5.5V fS(L) MSOP-10, micro SMD -8 LM4666 ±E|E|2 X 2W 1.2W 2.5W 1.5W 0.65% Po , -40.5 dB-+6 dB(32 eil) 1.2W (typ.) 75 mW (typ.) 1!C 16 micro SMD , LLP LM4859 1 2 -40.5 dB-+6 dB(32 eil) 1.2W (typ.) 75 mW (typ.) 12C 10 micro SMD , LLP LM4930 PCM l'S -46.5 dB-0 dB (32 eil) 1W (typ.) 27 mW , 2.1W 1.1W 0.30% TSS0P-2D/28, micro SMD -20, LLP-24 LM4874 X X 1.9W 1.2W 0.30% TSS0P-20 LM4875 X , • 'A-T- 41 ROT (Run on Time) • "OT & (Click and Pop)" S]S. • LM4670: LLP & micro SMD « â


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PDF LM4670/71 SE17F LM4670) LM4671) LM4670: LM4671: 2005t 5v 3W stereo AMPLIFIER smd A1t smd sl 043w TSS0P20 MS0P10 TIL71 semiconductor smd ad 5.9 lm4862 lm4871 LM4671
2005 - transistor SMD 12W

Abstract: smd transistor code 12w smd transistor 12W 55 smd 501 transistor smd transistor 12W VJ1206Y104KXAT 12W smd transistor 500-CHA-101-JVLE smd transistor 12W 74 Tekelec TA
Text: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY General Features EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 12W WITH 12 dB GAIN OVER 815 915 MHz 10:1 , 3224W 10K Zener Diode 5.1V 500mW SOD80 RF LDMOS Transistor 12V 15W TEFLON-GLASS Er = 2.55, THK = 0.762mm , -915-12W Obsolete Product Page/ Datasheet Description 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY Transistors|Transistors, Radio Frequency|LDMOS 28/32 V 900 MHz Applications - SMD Plastic Search time


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PDF DB-915-12W PD55015S DB-915-12W transistor SMD 12W smd transistor code 12w smd transistor 12W 55 smd 501 transistor smd transistor 12W VJ1206Y104KXAT 12W smd transistor 500-CHA-101-JVLE smd transistor 12W 74 Tekelec TA
2008 - ICE3BR4765J

Abstract: smd schottky diode sg1 ICE3B4765J 1nF CAPACITOR 250v ac smd y class DSP-301N-S008 B32560J8222M ice3b47 EF20 TRANSFORMER 22nF-400V 4A, 50V BRIDGE-RECTIFIER NEC
Text: Application Note, V1.3, Aug 2010 AN-EVAL3BR4765J 12W 5.0V SMPS Evaluation Board with CoolSETTM , endangered. 12W 5V Demoboard using ICE3BR4765J on board Revision History: 2008-06-04 Previous , board name to EVAL3BR4765J TM 12W 5.0V SMPS Evaluation Board with CoolSET F3R ICE3BR4765J , (including a reference to this document) to: ap-lab.admin@infineon.com AN-PS0014 12W 5V Demoboard , .20 Startup @ Low and High AC Line Input Voltage and 12W load


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PDF AN-EVAL3BR4765J ICE3BR4765J ICE3BR4765J ICE3ARxx65J /ICE3BRxx65J smd schottky diode sg1 ICE3B4765J 1nF CAPACITOR 250v ac smd y class DSP-301N-S008 B32560J8222M ice3b47 EF20 TRANSFORMER 22nF-400V 4A, 50V BRIDGE-RECTIFIER NEC
transistor SMD 12W

Abstract: SMD 12W 12W SMD light FLUORESCENT TUBE smd transistor 12w 12W 97 03024 DC24V 110V LED 3136
Text: available. Item no. J088 03004 4W J088 03008 8W J088 03012 12W J088 03016 16W J088 03020 20W J088 03024 24W J088 03004 4W J088 03008 8W J088 03012 12W J088 03016 16W J088 03020 20W J088 03024 , Consumption: DC24V Lighting: SMD LED Control Mode: CW DC light With aluminum hold. Adaptor: input 110V or , top or wall 12W and 16W for room, Fixation on top or wall Item no. J088 08004 4W J088 08008 8W J088 08012 12W J088 08016 16W Length/cm illumination 39 68 97 125 392 784 1176 1568


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PDF 10Hrs DC24V transistor SMD 12W SMD 12W 12W SMD light FLUORESCENT TUBE smd transistor 12w 12W 97 03024 DC24V 110V LED 3136
2008 - ICE3BR4765J

Abstract: ICE3B4765J smd schottky diode sg1 AN-EVALSF3R-ICE3BR4765J 1nF CAPACITOR 250v ac smd y class smd zener diode mark J2 EF20 core EPCOS DSP-301N-S008 DSP-301N ice3br4765
Text: Application Note, V1.2, Jun 2008 AN-EVALSF3R-ICE3BR4765J 12W 5.0V SMPS Evaluation Board with , may be endangered. 12W 5V Demoboard using ICE3BR4765J on board Revision History: Previous , Figure 2 (R2 change to 220) Revise Component List (R2 change to 220) 12W 5.0V SMPS Evaluation Board , : ap-lab.admin@infineon.com AN-PS0014 12W 5V Demoboard using ICE3BR4765J on board Table of Contents Page 1 , .20 Startup @ Low and High AC Line Input Voltage and 12W load


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PDF AN-EVALSF3R-ICE3BR4765J ICE3BR4765J ICE3BR4765J ICE3ARxx65J /ICE3BRxx65J ICE3B4765J smd schottky diode sg1 AN-EVALSF3R-ICE3BR4765J 1nF CAPACITOR 250v ac smd y class smd zener diode mark J2 EF20 core EPCOS DSP-301N-S008 DSP-301N ice3br4765
2004 - 15w audio amplifier circuit diagram

Abstract: 15W stereo amplifiers with tone controls circuits "Microphone Preamplifier" 1.5V "Microphone Preamplifier" 1.5V transistor 5v 3W stereo AMPLIFIER smd 12v stereo amplifiers 80W car power amplifier single supply 50w transistor mono audio amplifier LM386 Audio Amplifier lm386 smd
Text: "Click and pop" suppression circuit · 16 distinct output modes · Available in a micro SMD -30 package · , ±20V 5V 5V 5V Output power THD 1% 4 8 135W 80W 135W 80W 2.1W 1.2W 1W 0.6W 1.1W 0.6W , ) Package DIP-28 TO220-15 TSSOP-24 MSOP-10, micro SMD -8 micro SMD -9 Integrated audio amplifier , Mono speaker output @ 5V 8 1W (typ.) 1.1W (typ.) 1W (typ.) 1.1W (typ.) 1.2W (typ.) 1W (typ , /SPI Output modes 8 8 8 8 16 11 11 Package micro SMD micro SMD , LLP micro SMD micro


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PDF LM4930, LM4667, 570154-011EU 15w audio amplifier circuit diagram 15W stereo amplifiers with tone controls circuits "Microphone Preamplifier" 1.5V "Microphone Preamplifier" 1.5V transistor 5v 3W stereo AMPLIFIER smd 12v stereo amplifiers 80W car power amplifier single supply 50w transistor mono audio amplifier LM386 Audio Amplifier lm386 smd
1999 - smd transistor marking 12W

Abstract: smd transistor code 12w 06N80C2 TRANSISTOR SMD MARKING CODE 12w smd transistor 12W 98 transistor SMD 12W P-TO252 SMD TRANSISTOR MARKING 2c SPD06N80C2 smd 12w 98
Text: Preliminary data SPD06N80C2 Cool MOSTM Power Transistor C OLMOS O Power Semiconductors , - 75 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm 2 , delay time t d(on) V DD=400V, VGS=0/10V, - 25 - Rise time tr ID=6A, RG= 12W , - , 13 - 2.5 - - 9.8 - - 19.4 25 - 6 - pF ns Gate Charge , 3.5 3.0 5.5V 2.5 2.5 7V 8V 10V 20V 2.0 2.0 1.5 98 % 1.0 typ 1.5 0.5


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PDF SPD06N80C2 P-TO252 Q67040-S4352 06N80C2 smd transistor marking 12W smd transistor code 12w 06N80C2 TRANSISTOR SMD MARKING CODE 12w smd transistor 12W 98 transistor SMD 12W P-TO252 SMD TRANSISTOR MARKING 2c SPD06N80C2 smd 12w 98
2002 - keyence NR-250

Abstract: keyence CE CAPACITOR MATSUA keyence nr250 fip150 CE-0995 CE-0994 CE-0993 CE-0972 CE-0970
Text: (1/4) 001-04 / 20021122 / ea381_ce_09.fm Power Supplies CE-09 Series DC to DC Converters Non-insulation, 8-pin SMD type, 0.8 to 1.2W output SPECIFICATIONS AND STANDARDS PART NO. Maximum output power , Converters Non-insulation, 8-pin SMD type, 0.8 to 1.2W output SHAPES AND DIMENSIONS/RECOMMENDED PC BOARD , -09 Series DC to DC Converters Non-insulation, 8-pin SMD type, 0.8 to 1.2W output ADJUSTABLE OUTPUT , Non-insulation, 8-pin SMD type, 0.8 to 1.2W output PACKAGING STYLE AND QUANTITY · Tray(1 layer: 50 pieces, 1


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PDF CE-09 CE-0970 CE-0994 CE-09941 CE-0972 CE-0970-TP keyence NR-250 keyence CE CAPACITOR MATSUA keyence nr250 fip150 CE-0995 CE-0994 CE-0993 CE-0972 CE-0970
2011 - Not Available

Abstract: No abstract text available
Text: < High-power GaAs FET (small signal gain stage) > MGF0913A L & S BAND / 1.2W SMD non - matched DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers , < High-power GaAs FET (small signal gain stage) > MGF0913A L & S BAND / 1.2W SMD non - matched MGF0913A , signal gain stage) > MGF0913A L & S BAND / 1.2W SMD non - matched MGF0913A S PARAMETERS freq , ) > MGF0913A L & S BAND / 1.2W SMD non - matched Keep safety first in your circuit designs! Mitsubishi


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PDF MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs)
smd transistor marking 12W

Abstract: smd transistor 12W 3 pins SMD transistor Marking 13w transistor SMD 12W TRANSISTOR SMD 13W smd transistor 12W 98 transistor te 2305 smd transistor LY smd transistor 12W 12W smd transistor
Text: transistors, as described below: (1) Super Mini Transistor (TO-236 equivalent) The Super Mini Transistor , - J Z L Electrode Connections Model 1 Emitter Transistor Drain 2SK208/209 2SK210/211 Gate 2 Base Source Drain 3 Collector Gate Source Fig. 1 Outline Drawing of the Super Mini Transistor 94 (2) Power Mini Transistor (SOT-89 equivalent) Figure 2 shows an outline drawing of the Power Mini Transistor . The molded plastic por tion of this unit is compact, measuring 2.8 mm (L) by 4.5 mm (W


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PDF O-126 O-220 O-236 OT-23 O-220SM O-22QSM T0-220SM smd transistor marking 12W smd transistor 12W 3 pins SMD transistor Marking 13w transistor SMD 12W TRANSISTOR SMD 13W smd transistor 12W 98 transistor te 2305 smd transistor LY smd transistor 12W 12W smd transistor
2011 - 12W SMD

Abstract: MGF0913A smd GP 928
Text: < High-power GaAs FET (small signal gain stage) > MGF0913A L & S BAND / 1.2W SMD non - matched DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers , / 1.2W SMD non - matched MGF0913A TYPICAL CHARACTERISTICS P o ,G p ,P A E v s .P in 35 70 Vds , < High-power GaAs FET (small signal gain stage) > MGF0913A L & S BAND / 1.2W SMD non - matched MGF0913A , ) > MGF0913A L & S BAND / 1.2W SMD non - matched Keep safety first in your circuit designs! Mitsubishi


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PDF MGF0913A MGF0913A 31dBm 18dBm 200mA 50pcs) -65ctric 12W SMD smd GP 928
Not Available

Abstract: No abstract text available
Text: SMD Transient Voltage Suppressor For ESD Protection Formosa MS ESD3Z SERIES List List , . DS-221827 2009/08/10 2013/07/05 E 7 SMD Transient Voltage Suppressor For ESD , 20.0 10.5 210 450 ESD3Z5.0 5.0 10 6.0 1.0 9.8 17.0 18.0 306 300 , SMD Transient Voltage Suppressor For ESD Protection Formosa MS ESD3Z SERIES Typical , Revision Page. DS-221827 2009/08/10 2013/07/05 E 7 SMD Transient Voltage Suppressor


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PDF MIL-STD-750D METHOD-1038 JESD22-A102 METHOD-1051 METHOD-1021 1000hrs. METHOD-1031
ESD3Z12

Abstract: No abstract text available
Text: Formosa MS SMD Transient Voltage Suppressor For ESD Protection ESD3Z SERIES List List , . DS-221827 2009/08/10 2013/07/05 E 7 Formosa MS SMD Transient Voltage Suppressor For , 20.0 10.5 210 450 ESD3Z5.0 5.0 10 6.0 1.0 9.8 17.0 18.0 306 300 , Formosa MS SMD Transient Voltage Suppressor For ESD Protection ESD3Z SERIES Typical characteristics , Revision Page. DS-221827 2009/08/10 2013/07/05 E 7 Formosa MS SMD Transient Voltage


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PDF MIL-STD-202F METHOD-208 MIL-STD-750D METHOD-1038 JESD22-A102 METHOD-1051 1000hrs. METHOD-1021 ESD3Z12
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