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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
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DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

smd diode marking 59A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - PMEG2010AEK

Abstract: SC-59A TO236 footprint
Text: , encapsulated in a SOT346 (SC- 59A /TO-236) small Surface-Mounted Device ( SMD ) plastic package. 1.2 Features , SMD plastic package 1.3 Applications I I I I I Low voltage rectification High efficiency , PMEG2010AEK Description Version SC- 59A plastic surface-mounted package; 3 leads SOT346 4. Marking Table 4. Marking codes Type number Marking code PMEG2010AEK H1 5. Limiting , 200 220 mV [1] forward voltage IF = 10 mA IF = 100 mA [1] diode capacitance 290


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PDF PMEG2010AEK OT346 SC-59A/TO-236) PMEG2010AEK SC-59A TO236 footprint
smd diode marking 59A

Abstract: AN-994 IRF630S SMD-220 SMD resistors 59a OA 207 B diode IRG5 X_S marking
Text: , ruggedized device design, low on-resistance and cost-effectiveness. The SMD -220 is a surface mount power , lowest possible on-resistance in any existing surface mount package. The SMD -220 is suitable for high , Peak Diode Recovery dv/dt ® 5.0 V/ns Tj, Tstg Junction and Storage Temperature Range -55 to+150 °C , Gate Charge — — 43 nC Id= 5.9A Vds=160V Vgs=10V See Fig. 6 and 13 ® Qgs Gate-to-Source Charge â , €” ns Vdd=100V Id= 5.9A RG=12i2 Rd=160 See Figure 10 © tr Rise Time — 28 — td(off) Turn-Off


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PDF IRF630S SMD-220 smd diode marking 59A AN-994 IRF630S SMD resistors 59a OA 207 B diode IRG5 X_S marking
2011 - Not Available

Abstract: No abstract text available
Text: ID,pulse 100 A Eoss@400V 5.5 µJ Body diode di/dt 60 A/µs Type/OrderingCode Package Marking IPL65R099C7 PG-VSON-4 65C7099 Final Data Sheet 2 , - Continuous diode forward current IS - - 21 A TC=25°C Diode pulse current2) IS,pulse - - 100 A TC=25°C Reverse diode dv/dt 3) dv/dt - - 1.5 V/ns VDS=0.400V,ISD<=IS,Tj=25°C see table 8 Maximum diode commutation speed dif


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PDF IPL65R099C7
1999 - 2E12

Abstract: FSYC9055D FSYC9055R
Text: Resistant P-Channel Power MOSFETs Description · 59A , -60V, rDS(ON) = 0.027 The Discrete Products , Formerly available as type TA17750. G S Package SMD -2 CAUTION: These devices are sensitive to , Diode ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM , 280 nC - 140 160 nC - - 17 nC VGS = -12V, ID = 59A ID = 38A, VGS =


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PDF 9055D, 9055R) FSYC9055D, FSYC9055R C9055 YC9055D 2E12 FSYC9055D FSYC9055R
Not Available

Abstract: No abstract text available
Text: design, low on-resistance and cost-effectiveness. The SMD -220 is a surface m ount pow er package , possible on-resistance in any existing surface mount package. The SMD -220 is suitable fo r high current , © Avalanche Current © Repetitive Avalanche Energy © Peak Diode Recovery dv/dt ® Tj, T stg , . Max. Is Continuous Source Current (Body Diode ) Parameter — — 9.0 Ism Pulsed Source Current (Body Diode ) © — — 36 V sd Diode Forward Voltage — â


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PDF IRF630S SMD-220
AN-994

Abstract: IRLBD59N04E SMD-220 G10 zener diode smd zener diode KH v smd diode 59A
Text: Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS(on) = 0.018 ID = 59A Description The IRLBD59N04E is a 40V , Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt VGS Clamp , Parameter Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) Diode Forward , diode . ­­­ ­­­ 1.3 V TJ = 25°C, IS = 35A, VGS = 0V ­­­ 54 81 ns TJ = 25°C, IF = 35A ­­­ 90 130


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PDF IRLBD59N04E IRLBD59N04E Lead-D2Pak252-7105 AN-994 SMD-220 G10 zener diode smd zener diode KH v smd diode 59A
2006 - MOSFET TRANSISTOR SMD MARKING CODE 11

Abstract: MOSFET TRANSISTOR SMD MARKING CODE 7 PMD4003K SC-59A MARKING CODE SMD IC NXP SMD mosfet MARKING CODE
Text: switching diode to protect the base-emitter junction in reverse direction in a SOT346 (SC- 59A /TO-236) small Surface-Mounted Device ( SMD ) plastic package. 1.2 Features I I I I I I Low VCEsat (BISS) transistor and high-speed switching diode as driver High-speed switching diode to protect the base-emitter , peak collector current single pulse; tp 1 ms Diode IF VF [1] forward current forward , Type number Package Name PMD4003K Description Version SC- 59A plastic surface-mounted


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PDF PMD4003K OT346 SC-59A/TO-236) PMD4003K MOSFET TRANSISTOR SMD MARKING CODE 11 MOSFET TRANSISTOR SMD MARKING CODE 7 SC-59A MARKING CODE SMD IC NXP SMD mosfet MARKING CODE
2006 - PMD4002K

Abstract: SC-59A MARKING CODE SMD IC MOSFET TRANSISTOR SMD MARKING CODE 11 NXP SMD mosfet MARKING CODE
Text: 1.1 General description NPN switching transistor and high-speed switching diode to protect the base-emitter junction in reverse direction in a SOT346 (SC- 59A /TO-236) small Surface-Mounted Device ( SMD ) plastic package. 1.2 Features I I I I I I Switching transistor and high-speed switching diode as driver High-speed switching diode to protect the base-emitter junction Application-optimized , pulse; tp 1 ms Diode IF VF [1] forward current forward voltage Pulse test: tp 300 µs


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PDF PMD4002K OT346 SC-59A/TO-236) PMD4002K SC-59A MARKING CODE SMD IC MOSFET TRANSISTOR SMD MARKING CODE 11 NXP SMD mosfet MARKING CODE
2006 - MOSFET TRANSISTOR SMD MARKING CODE 11

Abstract: TRANSISTOR SMD MARKING CODE 2x PMD5002K SC-59A MARKING CODE SMD IC NXP SMD mosfet MARKING CODE
Text: 1.1 General description PNP switching transistor and high-speed switching diode to protect the base-emitter junction in reverse direction in a SOT346 (SC- 59A /TO-236) small Surface-Mounted Device ( SMD ) plastic package. 1.2 Features I I I I I I Switching transistor and high-speed switching diode as driver High-speed switching diode to protect the base-emitter junction Application-optimized , pulse; tp 1 ms Diode IF VF [1] forward current forward voltage Pulse test: tp 300 µs


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PDF PMD5002K OT346 SC-59A/TO-236) PMD5002K MOSFET TRANSISTOR SMD MARKING CODE 11 TRANSISTOR SMD MARKING CODE 2x SC-59A MARKING CODE SMD IC NXP SMD mosfet MARKING CODE
2006 - TRANSISTOR SMD MARKING CODE 2x

Abstract: PMD5003K SC-59A
Text: switching diode to protect the base-emitter junction in reverse direction in a SOT346 (SC- 59A /TO-236) small Surface-Mounted Device ( SMD ) plastic package. 1.2 Features I I I I I I Low VCEsat (BISS) transistor and high-speed switching diode as driver High-speed switching diode to protect the base-emitter , peak collector current single pulse; tp 1 ms Diode IF VF [1] forward current forward , Type number Package Name PMD5003K Description Version SC- 59A plastic surface-mounted


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PDF PMD5003K OT346 SC-59A/TO-236) PMD5003K TRANSISTOR SMD MARKING CODE 2x SC-59A
2006 - NXP SMD mosfet MARKING CODE

Abstract: PMD5001K TRANSISTOR SMD MARKING CODE 2x MARKING d4 SMD PNP TRANSISTOR TRANSISTOR SMD 2X K TRANSISTOR SMD mosfet driver MARKING CODE SMD IC MOSFET TRANSISTOR SMD MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE 11 MOSFET TRANSISTOR SMD MARKING CODE NA
Text: 1.1 General description PNP transistor and high-speed switching diode to protect the base-emitter junction in reverse direction in a SOT346 (SC- 59A /TO-236) small Surface-Mounted Device ( SMD ) plastic package. 1.2 Features I I I I I I General-purpose transistor and high-speed switching diode as driver High-speed switching diode to protect the base-emitter junction Application-optimized pinout , Description Version SC- 59A plastic surface-mounted package; 3 leads SOT346 4. Marking Table 4


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PDF PMD5001K OT346 SC-59A/TO-236) PMD5001K NXP SMD mosfet MARKING CODE TRANSISTOR SMD MARKING CODE 2x MARKING d4 SMD PNP TRANSISTOR TRANSISTOR SMD 2X K TRANSISTOR SMD mosfet driver MARKING CODE SMD IC MOSFET TRANSISTOR SMD MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE 11 MOSFET TRANSISTOR SMD MARKING CODE NA
2006 - PMD4001K

Abstract: MARKING CODE SMD IC MOSFET TRANSISTOR SMD MARKING CODE SC-59A NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE 11 MOSFET TRANSISTOR SMD MARKING CODE NA nxp marking d1
Text: 1.1 General description NPN transistor and high-speed switching diode to protect the base-emitter junction in reverse direction in a SOT346 (SC- 59A /TO-236) small Surface-Mounted Device ( SMD ) plastic package. 1.2 Features I I I I I I General-purpose transistor and high-speed switching diode as driver High-speed switching diode to protect the base-emitter junction Application-optimized pinout , Description Version SC- 59A plastic surface-mounted package; 3 leads SOT346 4. Marking Table 4


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PDF PMD4001K OT346 SC-59A/TO-236) PMD4001K MARKING CODE SMD IC MOSFET TRANSISTOR SMD MARKING CODE SC-59A NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE 11 MOSFET TRANSISTOR SMD MARKING CODE NA nxp marking d1
2008 - TRANSISTOR SMD CODE PACKAGE SOT89 52 10A

Abstract: smd code marking NEC 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
Text: Diode Dual Single Dual Single Dual Complementary Configuration µPA2211 P , µPA2780GR µPA2781GR 11 MOSFET Schottky Diode µPA2782GR N 5 6 10 7 5.5 5 , 30 8 11.3 8.9 4.5V µPA1930TE Single Dual MOSFET Schottky Diode , Dual Single -20 P µPA2650T1E µPA2610T1C 24 3 MOSFET Schottky Diode 20 , µPA2780GR 8 µPA2754GR 10 40 MOSFET Schottky Diode 11 8 µPA2755GR µPA2753GR


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PDF G18756EU3V0SG00 TRANSISTOR SMD CODE PACKAGE SOT89 52 10A smd code marking NEC 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
Not Available

Abstract: No abstract text available
Text: 1998 Features · 59A , -60V, ros(ON) = 0-027Q · Total Dose - Meets Pre-RAD Specifications to 100K RAD , Symbol F orm erly available as typ e TA17750. Package SMD -2 C AUTION: These devices are , (Body D io d e ). Pulsed Source Current (Body Diode , 125°C MIN -60 -2.0 -1.0 VGS = 0V to -20V VGS = 0V to -12V VGS = 0V to -2V V DD = -30V, lD = 59A lD = 59A , VDs = -15V VDS = -25V, VGS = 0V, f = 1MHz TYP 0.017 140 38 26 -6 6100 2200 300 MAX -7.0 -6.0 25


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PDF FSYC9055D, FSYC9055R
smd 39a diode zener

Abstract: 39A zener diode AN-994 IRLBD59N04E SMD-220
Text: Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS(on) = 0.018 ID = 59A Description The IRLBD59N04E is a 40V , Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt VGS Clamp , Parameter Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) Diode Forward , diode . ­­­ ­­­ 1.3 V TJ = 25°C, IS = 35A, VGS = 0V ­­­ 54 81 ns TJ = 25°C, IF = 35A ­­­ 90 130


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PDF -93910A IRLBD59N04E IRLBD59N04E Lead-D2Pa252-7105 smd 39a diode zener 39A zener diode AN-994 SMD-220
2005 - Not Available

Abstract: No abstract text available
Text: profile: 17.8x15.0x7.8mm (0.70”x0. 59⠀x0.31”) Monotonic startup into normal and pre-biased loads , of 0.8V to 3.3V (IPM04S) or 0.8V to 5V (IPM12S). The IPM product family is available in both a SMD or SIP packages. DATABRIEF DB IPM-S 03032005 Remote sense SMD or SIP package APPLICATIONS , 17.8x15.0x7.8mm (0.70”x0. 59⠀x0.31”) Typical Typical Typical Typical Typical Voltage Accuracy Line , Output Current 0A0 - programmable between 0.8V and 3.3V/5V S - Single R R - SIP S - SMD A


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PDF 12Vin, V/10A EN60950 IPM04S IPM12S Point-of-Lo10A IPM04S0A0S10 IPM12S0A0R08 IPM12S0A0S08 x6220
2001 - smd 39a diode zener

Abstract: TH 2190 mosfet 39A zener diode th 2190 TH 2190 mosfet isolated smd diode 39a P Channel Power MOSFET IRF TH 2190 Transistor AN-994 IRLBD59N04E
Text: PD -93910B IRLBD59N04E HEXFET® Power MOSFET Integrated Temperature Sensing Diode Ultra Low , VDSS = 40V RDS(on) = 0.018 ID = 59A Description The IRLBD59N04E is a 40V, N-channel HEXFET , Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt VGS Clamp , Characteristics IS ISM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge


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PDF -93910B IRLBD59N04E IRLBD59N04E 100pF, AN-994. smd 39a diode zener TH 2190 mosfet 39A zener diode th 2190 TH 2190 mosfet isolated smd diode 39a P Channel Power MOSFET IRF TH 2190 Transistor AN-994
Not Available

Abstract: No abstract text available
Text: MOSFETs June 1998 Features Description • 59A , -60V, ros(ON) = 0-027S2 The Discrete , . Package SMD -2 C AUTIO N : These devices are sensitive to electrostatic discharge. Users should follow , a VGS = -12V, l D = 59A iD = 38A, T c = 25°C - 0.017 0.027 VGS = -12 V T c = , Qgs - 38 49 nC Q gd - 26 38 nC iD = 59A , V DS = -15V - -6 - , Fall Time Total Gate Charge V D d = -30V, iD = 59A , Rl = 0.51 £2, V q S = -12V, R qS = 2.35Q


OCR Scan
PDF FSYC9055D, FSYC9055R 0-027S2
2005 - Not Available

Abstract: No abstract text available
Text: profile: 17.8x15.0x7.8mm (0.70”x0. 59⠀x0.31”) Monotonic startup into normal and pre-biased loads , of 0.8V to 3.3V (IPM04S) or 0.8V to 5V (IPM12S). The IPM product family is available in both a SMD or SIP packages. DATABRIEF DB IPM-S 01142005 Remote sense SMD or SIP package APPLICATIONS , 17.8x15.0x7.8mm (0.70”x0. 59⠀x0.31”) Typical Typical Typical Typical Typical Voltage Accuracy Line , Output Current 0A0 - programmable between 0.8V and 3.3V/5V S - Single R R - SIP S - SMD A


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PDF 12Vin, V/10A EN60950 IPM04S IPM12S IPM04S0A0R10 IPM12S0A0R08 x6220
2005 - Not Available

Abstract: No abstract text available
Text: profile: 17.8x15.0x7.8mm (0.70”x0. 59⠀x0.31”) Monotonic startup into normal and pre-biased loads , of 0.8V to 3.3V (IPM04S) or 0.8V to 5V (IPM12S). The IPM product family is available in both a SMD or SIP packages. DATABRIEF DB IPM-S 03152005 Remote sense SMD or SIP package APPLICATIONS , 17.8x15.0x7.8mm (0.70”x0. 59⠀x0.31”) Typical Typical Typical Typical Typical Voltage Accuracy Line , Output Current 0A0 - programmable between 0.8V and 3.3V/5V S - Single R R - SIP S - SMD A


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PDF 12Vin, V/10A EN60950) 73/23/EEC 93/68/EEC IPM04S IPM12S IPM04S0A0S10 IPM12S0A0R08 IPM12S0A0S08
2004 - Not Available

Abstract: No abstract text available
Text: profile: 17.8x15.0x7.8mm (0.70”x0. 59⠀x0.31”) Monotonic startup into normal and pre-biased loads , (IPM04S) or 0.8V to 5V (IPM12S). The IPM product family is available in both a SMD or SIP packages. DATABRIEF DB IPM 09032004 OPTIONS Remote sense SMD or SIP package APPLICATIONS Telecom/DataCom , , 8V~14V 300KHz (04S) / 500KHz (12S) 13mS (IPM04S) / 17mS (IPM12S) TBD 17.8x15.0x7.8mm (0.70”x0. 59â , Current 0A0 - programmable between 0.8V and 3.3V/5V R - SIP S - SMD A 08 - 8A 10 - 10A


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PDF 12Vin, V/10A EN60950 IPM04S IPM12S IPM04S0A0R10 IPM12S0A0R08 x6220
2001 - TH 2190 mosfet

Abstract: smd 39a diode zener TH 2190 mosfet isolated AN-994 IRLBD59N04E SMD-220 G10 zener diode 39A zener diode
Text: PD -93910B IRLBD59N04E HEXFET® Power MOSFET Integrated Temperature Sensing Diode Ultra Low , VDSS = 40V RDS(on) = 0.018 ID = 59A Description The IRLBD59N04E is a 40V, N-channel HEXFET , Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt VGS Clamp , Characteristics IS ISM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode ) Pulsed Source Current (Body Diode ) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge


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PDF -93910B IRLBD59N04E IRLBD59N04E 100pF, AN-994. TH 2190 mosfet smd 39a diode zener TH 2190 mosfet isolated AN-994 SMD-220 G10 zener diode 39A zener diode
2006 - Not Available

Abstract: No abstract text available
Text: profile: 17.8x15.0x7.8mm (0.70”x0. 59⠀x0.31”) Monotonic startup into normal and pre-biased loads , of 0.8V to 3.3V (IPM04S) or 0.8V to 5V (IPM12S). The IPM product family is available in both a SMD or SIP packages. DATABRIEF DB IPM-S 03222006 SMD or SIP package APPLICATIONS Telecom , (0.70”x0. 59⠀x0.31”) Typical Typical Typical Typical Typical Voltage Accuracy Line , ~ 5.5V S - Single R - SIP 08 - 8A Space-RoHS 5/6 Module 12 - 8V ~ 14V S - SMD 10


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PDF 12Vin, V/10A QS9000, OHSAS18001 EN60950) 73/23/EEC 93/68/EEC IPM04S IPM12S IPM04S0A0R10
1999 - 14N03L

Abstract: IPD14N03LA ANPS071E IPD14N03L smd diode marking 59A 14N03
Text: Package Ordering Code IPD14N03L P- TO252 -3-11 Q67042-S4111 Marking 14N03L Maximum Ratings , , limited by Tjmax2) EAR 7 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 , SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm2 cooling area 3 , carry ID= 59A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com , =0V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode


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PDF IPD14N03L Q67042-S4111 14N03L 14N03L IPD14N03LA ANPS071E IPD14N03L smd diode marking 59A 14N03
2004 - Not Available

Abstract: No abstract text available
Text: size and low profile: 17.8x15.0x7.8mm (0.70”x0. 59⠀x0.31”) w Monotonic startup into normal , w Remote sense Point-of-Load (POL) power modules, are the latest offerings from a w SMD , both a SMD or SIP packages. DATABRIEF DB_IPM-S_11232004 Delta Electronics, Inc , ) / 500KHz (12S) 13mS (IPM04S) / 17mS (IPM12S) TBD 17.8x15.0x7.8mm (0.70”x0. 59⠀x0.31”) Voltage , Current 0A0 - programmable between 0.8V and 3.3V/5V R - SIP S - SMD A 08 - 8A 10 - 10A


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PDF 12Vin, EN60950 IPM04S0A0R10 IPM12S0A0R08 x6220
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