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Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

smd diode byg Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - smd diode byg 200

Abstract: smd diode byg 20 j smd diode byg byg 100 diode BYG24D
Text: BYG24 Vishay Semiconductors Fast Avalanche SMD Rectifier Features · · · · · Glass , Parts Table Part BYG 24 D BYG 24 G BYG 24 J Type differentiation VR = 200 V @ IFAV = 1.5 A VR = 400 V @ , Test condition Part BYG 24 D BYG 24 G BYG 24 J Peak forward surge current Average forward current , voltage IF = 1 A IF = 1.5 A VR = VRRM VR = VRRM, Tj = 100 °C IR = 100 µA BYG 24 D BYG 24 G BYG 24 J , Document Number 86067 Rev. 1.2, 19-Oct-04 BYG24 Vishay Semiconductors 30 C D ­ Diode Capacitance


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PDF BYG24 DO-214AC 08-Apr-05 smd diode byg 200 smd diode byg 20 j smd diode byg byg 100 diode BYG24D
SOD106A

Abstract: BYG90-40 smd diode byg BYG90-20 BYG90-30 MLC389
Text: cathode identifier handbook, 4 columns · Guard ring protected · Plastic SMD package. kk aa , protection. DESCRIPTION Fig.1 Simplified outline (SOD106A), pin configuration and symbol. The BYG , encapsulated in rectangular SOD106A plastic SMD packages. 1996 May 06 2 Philips Semiconductors , . MAX. UNIT Per diode VR continuous reverse voltage BYG90-20 V - 30 V BYG90 , Per diode VF forward voltage see Fig.2; note 1 IF = 1 A diode capacitance mV - -


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PDF M3D113 BYG90-40 MAM129 OD106A) SOD106A smd diode byg BYG90-20 BYG90-30 MLC389
M9MZ60GK4YGA

Abstract: M61X6G4GGA M9MZ60GK4CGA M8MX25GK4CGA M7RX15GB4GGA M9MX40GK4CGA M9RX40GK4GG1 M8RX25GK4GG1 M81X25GK4GGA M9MZ90GR4YG1
Text: position Motor type 1GG RGG MYG MCG 1ph 230V 1ph 230V quick reversible 3ph 230V BGG BYG , applications. 230V versions are ideal for use with inverters such as the Panasonic, smd or SMV inverters , use with inverters such as the Panasonic, smd or SMV inverters. MX9G gearbox ® Rated 230V or 400V , or smd inverters. Flanged MY9G gearbox All 60W geared motors are available with flanged or , as the Panasonic, smd or SMV inverters. Flanged MP9G gearbox All 60W geared motors are


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PDF 500r/min MX6G10XB MX7G10XB MX8G10XB MX9G10XB MZ9G10XB M9MZ60GK4YGA M61X6G4GGA M9MZ60GK4CGA M8MX25GK4CGA M7RX15GB4GGA M9MX40GK4CGA M9RX40GK4GG1 M8RX25GK4GG1 M81X25GK4GGA M9MZ90GR4YG1
1999 - SOD106A

Abstract: smd diode byg BYG90-40 diode smd marking AA 25 BYG90-20 BYG90-30
Text: columns · Guard ring protected · Plastic SMD package. kk aa APPLICATIONS · Low power , Fig.1 Simplified outline (SOD106A), pin configuration and symbol. The BYG 90-40 series consists of , SOD106A plastic SMD packages. 1996 May 06 2 Philips Semiconductors Product specification , Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode , CONDITIONS MIN. TYP. MAX. UNIT Per diode VF forward voltage see Fig.2; note 1 IF = 1 A


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PDF M3D113 BYG90-40 MAM129 OD106A) SOD106A smd diode byg diode smd marking AA 25 BYG90-20 BYG90-30
SOD106A

Abstract: BYG90-40 BYG90-20 BYG90-30 MSA35 marking BYG90
Text: cathode identifier handbook, 4 columns · Guard ring protected · Plastic SMD package. kk aa , protection. DESCRIPTION Fig.1 Simplified outline (SOD106A), pin configuration and symbol. The BYG , encapsulated in rectangular SOD106A plastic SMD packages. 1996 May 06 2 Philips Semiconductors , . MAX. UNIT Per diode VR continuous reverse voltage BYG90-20 V - 30 V BYG90 , Per diode VF forward voltage see Fig.2; note 1 IF = 1 A diode capacitance mV - -


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PDF M3D113 BYG90-40 MAM129 OD106A) SOD106A BYG90-20 BYG90-30 MSA35 marking BYG90
1996 - smd diode byg

Abstract: BYG90-90 SOD106A
Text: diode BYG90-90 FEATURES DESCRIPTION · Low switching losses The BYG 90-90 is a Schottky barrier rectifier diode , fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD package. · High breakdown voltage · Capability of absorbing very high surge current · Fast recovery time cathode identifier handbook, 4 columns · Guard ring protected · Plastic SMD , rectifier diode Product specification Supersedes data of December 1994 File under Discrete Semiconductors


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PDF M3D113 BYG90-90 OD106A smd diode byg BYG90-90 SOD106A
smd diode 106a

Abstract: smd 106a BYG90-90
Text: The BYG 90-90 is a S chottky barrier rectifier diode , fabricated in planar technology, and encapsulated in the rectangular S O D 106A plastic SMD package. · Guard ring protected · P lastic SM D , DISCRETE SEMICONDUCTORS GMTâ SlnlEET BYG90-90 Schottky barrier rectifier diode Product , barrier rectifier diode FEATURES · Low sw itching losses · High breakdow n voltage · C apability of , S em iconductors Product specification Schottky barrier rectifier diode ELECTRICAL


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PDF BYG90-90 smd diode 106a smd 106a BYG90-90
SMA BYG

Abstract: No abstract text available
Text: _BYG22 Vishay Telefunken Super Fast Silicon Mesa SMD Rectifier Features · · · · · · · · C o n tro lle d a v a la n c h e c h a ra c te ris tic G la s s p a s s iv a te d ju n c tio n L o w re ve rs e c u rre n t L o w fo rw a rd v o lta g e S o ft re c o v e ry c h a ra c te ris tic V e ry fa s t re v e rs e re c o v e ry tim e G o o d s w itc h in g b e h a v io u r W a ve and re flo w , e rs e v o lta g e T est C o n d itio n s T yp e BYG 22A BYG 22B B YG 22D P e a k fo rw a rd s u rg


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PDF BYG22 D-74025 24-Jun-98 SMA BYG
Not Available

Abstract: No abstract text available
Text: _BYG10 Vishay Telefunken Silicon Mesa SMD Rectifier Features · · · · · C ontrolled avalanche characteristics G lass passivated junction Low reverse current High surge current capability W ave and reflow solderable Applications Surface m ounting G eneral purpose rectifier 94 9535 Absolute Maximum Ratings Tj = 25°C P aram eter R everse voltage =R epetitive peak reverse voltage Test C onditions Type BYG10D BYG10G BYG10J BYG 10K BYG10M Peak forw ard surge current A verage forw ard current I


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PDF BYG10 BYG10D BYG10G BYG10J BYG10M D-74025 24-Jun-98
2002 - Not Available

Abstract: No abstract text available
Text: outputs have been previously placed in the high-impedance state byG , the user must wait user must wait , : SMD 5962 - *TBD* * * * * Lead Finish: (A) = Hot solder dipped (C) = Gold (X) = Factory


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PDF UT8R256K16 0E14n/cm
2001 - Not Available

Abstract: No abstract text available
Text: the outputs have been previously placed in the highimpedance state byG , the user must wait t WLQZ , . Gold Lead Finish Only. 13 512K32 16Megabit SRAM MCM: SMD 5962 - 01511 * * * * Lead


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PDF UT9Q512K32 16Megabit 50krads 1E-10 0E14n/cm2 68-lead 10krad 30krad 50krad
2001 - Not Available

Abstract: No abstract text available
Text: initiated by E1 or E2. Unless the outputs have been previously placed in the high-impedance state byG , the , PM EN T 512K x 8 SRAM: SMD 5962 - *TBD* * * * * Lead Finish: (A) = Hot solder dipped


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PDF UT8R512 0E14n/cm 36-lead 40-lead
2002 - BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 toshiba l 300 laptop motherboard circuit diagram TRANSISTOR S1A 64 smd
Text: diode - damper / modulator · GA high-speed switching diodes · GA low leakage current diodes · GA , Radio varicap diodes FM radio tuning · ZenblockTM - zener with integrated blocking diode (one for two , TIME (us) 25 DIODE CAPACITANCE * at VR = 2V 5.4 www.semiconductors.philips.com (pF) 5* 100 kHz DIODE SERIES RESISTANCE (MOhm) 12* 1 MHz DIODE SERIES RESISTANCE (kOhm) 250* PACKAGE SMD SOD106 BAQ806 TYPICAL APPLICATION LEADED SOD81 BAQ800 (Car) Radio R Discrete


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PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 toshiba l 300 laptop motherboard circuit diagram TRANSISTOR S1A 64 smd
2001 - BU4508DX equivalent

Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note ct 2A05 diode BU2508Dx equivalent diode cross reference BYW96E ST2001HI equivalent BU2508DF equivalent
Text: diode option (indicated by "D" in type number). Full range of isolated and industry standard packages , integrated damper diode All All BU * * * * D * with integrated damper diode MSD517 BUX87 - , ) (isolated TO220AB) SMD TO92 (SOT54) IPAK DPAK D2PAK (SOT533) (SOT428) TYPICAL , damper Diodes - 2 (factsheet) Order code 9397 750 07536 9398 510 64011 9398 510 65011 DUAL DIODE , BYM36G BYW97G BYD47-20 BYD43-20 BYV98 PFC Diode 1/2 1/2 1 1/2 1/2 1 1 110/220 V AC


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PDF BT148-600R BT148-400R BU4508DX equivalent BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note ct 2A05 diode BU2508Dx equivalent diode cross reference BYW96E ST2001HI equivalent BU2508DF equivalent
2003 - UT8Q1024K8

Abstract: No abstract text available
Text: by En. Unless the outputs have been previously placed in the highimpedance state byG , the user must , +125°C. Radiation neither tested nor guaranteed. 13 1024K8 SRAM: SMD 5962 - 01532


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PDF UT8Q1024K8 50krad
2001 - Not Available

Abstract: No abstract text available
Text: the high-impedance state byG , the user must wait user must wait tWLQZ before applying data to the 16 , guaranteed. EL O 13 PM EN T 256K x 16 SRAM: SMD 5962 - *TBD* * * * * Lead Finish: (A


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PDF UT8R256 0E14n/cm 48-lead 115ns
2001 - Not Available

Abstract: No abstract text available
Text: the high-impedance state byG , the user must wait user must wait tWLQZ before applying data to the 16 , guaranteed. EL O 13 PM EN T 256K x 16 SRAM: SMD 5962 - *TBD* * * * * Lead Finish: (A


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PDF UT8R256K16 0E14n/cm 48-lead 115ns
2003 - A15G

Abstract: No abstract text available
Text: previously placed in the high-impedance state byG , the user must wait tWLQZ before applying data to the nine , °C. Radiation neither tested nor guaranteed. EL O 13 PM EN T 512K x 8 SRAM: SMD 5962 -


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PDF UT8R512K8 0E14n/cm 36-lead 02TBD) 40-lead A15G
2001 - Not Available

Abstract: No abstract text available
Text: . Unless the outputs have been previously placed in the high-impedance state byG , the user must wait user , PM EN T 128K x 32 SRAM: SMD 5962 - *TBD* * * * * Lead Finish: (A) = Hot solder


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PDF UT8R128 0E14n/cm 68-lead
2003 - UT9Q512

Abstract: No abstract text available
Text: outputs have been previously placed in the highimpedance state byG , the user must wait t WLQZ before , . 14 512K x 8 SRAM: SMD 5962 - 00536 * * * * Lead Finish: (A) = Hot solder dipped (C) =


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PDF UT9Q512 50krads 100krads 36-lead -40oC 125oC) 50krad
2002 - 512K32

Abstract: UT8Q512K32
Text: by En. Unless the outputs have been previously placed in the highimpedance state byG , the user must , . Gold lead finish only. 13 512K32 16Megabit SRAM MCM: SMD 5962 - 01533 * * * * Lead


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PDF UT8Q512K32 16Megabit 32-bit 50krads 68-lead 512K32 10krad 50krad
2002 - Not Available

Abstract: No abstract text available
Text: write is initiated by En. Unless the outputs have been previously placed in the highimpedance state byG , tested at -40°C to +125°C. Radiation neither tested nor guaranteed. 12 1024K8 SRAM: SMD 5962 -


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PDF UT8Q1024K8 50krad 44-lead -40oC 10krad 30krad
2002 - UT8R512K8

Abstract: No abstract text available
Text: initiated by E1 or E2. Unless the outputs have been previously placed in the high-impedance state byG , the , EN T 512K x 8 SRAM: SMD 5962 - *TBD* * * * * Lead Finish: (A) = Hot solder dipped (C


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PDF UT8R512K8 0E14n/cm 36-lead 40-lead
2002 - Not Available

Abstract: No abstract text available
Text: write is initiated by En. Unless the outputs have been previously placed in the highimpedance state byG , tested at -40°C to +125°C. Radiation neither tested nor guaranteed. 12 1024K8 SRAM: SMD 5962 -


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PDF UT8Q1024K8 50krad 44-lead -40oC 10krad 30krad
2001 - UT8Q512

Abstract: No abstract text available
Text: state byG , the user must wait t WLQZ before applying data to the nine bidirectional pins DQ(7:0) to , ° C. Radiation neither tested nor guaranteed. Gold Lead Finish Only. 14 512K x 8 SRAM: SMD


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PDF UT8Q512 50krads 100krads 10krad) 30krad) 50krad
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