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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
UJ3D06520TS UJ3D06520TS ECAD Model UnitedSiC 650V-20A Diode TO-220-2L
UJ3D1202TS UJ3D1202TS ECAD Model UnitedSiC 1200V-2A Diode TO-220-2L
UJ3D1725K2 UJ3D1725K2 ECAD Model UnitedSiC 1700V-25A Diode TO-247-2L
UJ3D06504TS UJ3D06504TS ECAD Model UnitedSiC 650V-4A Diode TO-220-2L
UJ3D1210K2 UJ3D1210K2 ECAD Model UnitedSiC 1200V-10A Diode TO-247-2L
UJ3D1220K2 UJ3D1220K2 ECAD Model UnitedSiC 1200V-20A Diode TO-247-2L

smd diode S6 6D Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - smd diode code g3

Abstract: smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6
Text: S5 L1 L2 L3 G4 S4 G6 S6 L- Bent leads Surface Mount Device G2 S2 Straight leads MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C ( diode ) TC = 90°C ( diode , : -low RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 3 lead forms available - straight leads (SL) - SMD lead version ( SMD ) - bent leads (BL , Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD trr


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PDF 160-0055X1 160-0055X1-BL 160-0055X1-SL 160-0055X1-SMD 160-0055X1 smd diode code g3 smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6
2008 - smd diode S6

Abstract: smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6
Text: L3 S6 GWM 220-003P3- SMD L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 L2 S5 G6 , G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS , °C 180 138 A A IF25 IF90 TC = 25°C ( diode ) TC = 90°C ( diode ) 115 75 A A Symbol , reverse diode · package: -high level of integration -high current capability 300 A max. -aux. , Package options · 3 lead forms available - straight leads (SL) - SMD lead version ( SMD ) - bent leads


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PDF 220-004P3 220-003P3-SMD 220-004P3 20081126f smd diode S6 smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6
2008 - smd diode g6

Abstract: smd S4 36 SMD diode MARKING CODE g6 smd g5
Text: G5 L2 S5 G6 Surface Mount Device G L3 S6 GWM 220-003P3- SMD L+ S G2 , S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS , 90°C 190 145 A A IF25 IF90 TC = 25°C ( diode ) TC = 90°C ( diode ) 125 80 A A , intrinsic reverse diode • package: - high level of integration - high current capability 300 A max , straight leads (SL) - SMD lead version ( SMD ) - bent leads (BL) K/W K/W 20080527e -3 GWM


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PDF 220-004P3 220-003P3-SMD 220-004P3 20080527e smd diode g6 smd S4 36 SMD diode MARKING CODE g6 smd g5
2007 - smd diode S4

Abstract: No abstract text available
Text: G5 L2 S5 G6 Surface Mount Device G L3 S6 GWM 100-01X1- SMD L+ S G2 L , S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS , 90°C 190 145 A A IF25 IF90 TC = 25°C ( diode ) TC = 90°C ( diode ) 125 80 A A , intrinsic reverse diode • package: - high level of integration - high current capability 300 A max , straight leads (SL) - SMD lead version ( SMD ) - bent leads (BL) K/W K/W 20070906c -3 GWM


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PDF 220-004P3 100-01X1-SMD 220-004P3 20070906c smd diode S4
2007 - smd diode S4

Abstract: smd diode code g3 SMD MARKING CODE 503 K smd diode S6 S4 DIODE S6 diode smd diode marking code L2 SMD MARKING g3 smd diode code s6 SMD MARKING g5
Text: SMD Bent GWM 220-004P3 - SMD GWM 220-004P3 - BL G S G2 S2 G3 S3 G4 S4 G5 S5 G6 S6 L+ L , package Preliminary data G1 S1 L+ G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 40V ID25 = 190A RDSon , VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C ( diode ) TC = 90°C ( diode ) Conditions , RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 3 lead forms available - straight leads (SL) - SMD lead version ( SMD ) - bent leads (BL


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PDF 220-004P3 diod007 20070628b 220-004P3-SL 220-04P3-BL 220-004P3 smd diode S4 smd diode code g3 SMD MARKING CODE 503 K smd diode S6 S4 DIODE S6 diode smd diode marking code L2 SMD MARKING g3 smd diode code s6 SMD MARKING g5
2011 - S4 42 DIODE

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37
Text: S2 Straight leads G6 S4 G2 Surface Mount Device S6 L- Applications MOSFETs , = 25°C ( diode ) TC = 90°C ( diode ) TC = 110°C ( diode ) Symbol Conditions A A A tbd , optimized intrinsic reverse diode • package: - high level of integration - high current capability 300 , equipment e Symbol 1.3 1.0 1.6 • 2 lead forms available - straight leads (SL) - SMD lead version ( SMD ) K/W K/W VDS = ID·(RDS(on) + RPin to Chip) IXYS reserves the right to change


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PDF GWM100-0085X1 IF110 ID110 100-0085X1-SMD 100-0085X1 100-0085X1 S4 42 DIODE smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37
2011 - S4 42 DIODE

Abstract: smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37
Text: package L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 85V = 103A ID25 RDSon typ. = 5.5mW , Symbol TC = 25°C TC = 90°C TC = 110°C TC = 25°C ( diode ) TC = 90°C ( diode ) TC = 110°C ( diode ) Conditions , : -low RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 2 lead forms available - straight leads (SL) - SMD lead version ( SMD ) (TJ = 25°C, unless , -0085X1 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD trr


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PDF GWM100-0085X1 ID110 IF110 100-0085X1 100-0085X1-SMD 100-0085X1 S4 42 DIODE smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37
2009 - Diode smd s6 68

Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
Text: G3 L1 G5 L2 n S5 G6 L3 e S6 Ordering Straight Standard SMD , G4 S2 G6 S4 G2 Straight leads Surface Mount Device S6 L- Applications , IF90 IF110 TC = 25°C ( diode ) TC = 90°C ( diode ) TC = 110°C ( diode ) Symbol Conditions iv , -optimized intrinsic reverse diode · package: -high level of integration -high current capability 300 A , 1.6 · 2 lead forms available - straight leads (SL) - SMD lead version ( SMD ) K/W K/W VDS =


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PDF GWM100-0085X1 IF110 ID110 A0-0085X1 100-085X1-SL 100-085X1-SMD 100-0085X1 100-0085X1 Diode smd s6 68 S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
2009 - SMD MARKING code L1

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ
Text: G3 L1 G5 L2 n S5 G6 L3 e S6 Ordering Straight Standard SMD , G4 S2 G6 S4 G2 Straight leads Surface Mount Device S6 L- Applications , °C IF25 IF90 IF110 TC = 25°C ( diode ) TC = 90°C ( diode ) TC = 110°C ( diode ) Symbol Conditions , reverse diode · package: -high level of integration -high current capability 300 A max. -aux. , 1.3 1.0 1.6 · 2 lead forms available - straight leads (SL) - SMD lead version ( SMD ) K/W


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PDF 180-004X2 IF110 ID110 1004X2 180-004X2-SL 180-004X2-SMD 180-004X2 SMD MARKING code L1 smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ
2007 - smd diode code SL

Abstract: smd diode code g3 smd diode .S6 22 smd diode S2 Marking Code KEY smd diode g5 SMD mosfet MARKING code TJ smd code marking SL S6 39 diode DIODE S4 39
Text: package L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 55V ID25 = 160A RDSon typ. = 2.7mW Bent , Symbol TC = 25°C TC = 90°C TC = 25°C ( diode ) TC = 90°C ( diode ) Conditions Conditions TJ = 25°C to 150 , reverse diode · package: -high level of integration -high current capability 300 A max. -aux. terminals , - straight leads (SL) - SMD lead version ( SMD ) - bent leads (BL) Characteristic Values (TJ = 25 , All rights reserved -6 GWM 160-0055X1 Source-Drain Diode Symbol Conditions Characteristic


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PDF 160-0055X1 20070809c smd diode code SL smd diode code g3 smd diode .S6 22 smd diode S2 Marking Code KEY smd diode g5 SMD mosfet MARKING code TJ smd code marking SL S6 39 diode DIODE S4 39
2008 - DIODE S4 66

Abstract: smd diode g6 DIODE S4 39 smd diode Diode smd s6 46 SMD MARKING CODE s4 smd diode S6 smd diode code g4 160-0055X1 DIODE marking S4 45 smd diode code g3 marking s4 resistor
Text: L3 S6 GWM 160-0055X1- SMD L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 L2 S5 , L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS Maximum Ratings TJ = 25 , IF25 IF90 TC = 25°C ( diode ) TC = 90°C ( diode ) 120 75 A A Symbol Conditions , equipment Features · MOSFETs in trench technology: -low RDSon -optimized intrinsic reverse diode · , setup) 1.3 1.0 1.6 Package options · 3 lead forms available - straight leads (SL) - SMD


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PDF 160-0055X1 20081126g DIODE S4 66 smd diode g6 DIODE S4 39 smd diode Diode smd s6 46 SMD MARKING CODE s4 smd diode S6 smd diode code g4 160-0055X1 DIODE marking S4 45 smd diode code g3 marking s4 resistor
2007 - Not Available

Abstract: No abstract text available
Text: GWM 100-01X1- SMD L+ S G2 L- S2 G3 S3 G4 L S4 G5 L2 S5 G6 L3 S6 , S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS Maximum Ratings , 120 A A IF25 IF90 TC = 25°C ( diode ) TC = 90°C ( diode ) 130 80 A A Symbol , low RDSon - optimized intrinsic reverse diode • package: - high level of integration - , options • 3 lead forms available - straight leads (SL) - SMD lead version ( SMD ) - bent leads (BL


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PDF 160-0055X1 20070906d
2008 - S3 diode

Abstract: smd diode code g6 9 smd G5 smd diode code g3 smd diode g6 Diode smd s6 46 s4 72 DIODE SMD SMD MARKING CODE s4 starter/generator smd MOSFET code S5
Text: L2 S5 G6 Surface Mount Device G1 L3 S6 GWM 120-0075X1- SMD L+ S1 G2 L , L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS Maximum Ratings TVJ = 25 , IF25 IF90 TC = 25°C ( diode ) TC = 90°C ( diode ) 110 80 A A Symbol Conditions , 0.01 Features · MOSFETs in trench technology: -low RDSon -optimized intrinsic reverse diode · , 1.6 Package options · 3 lead forms available - straight leads (SL) - SMD lead version ( SMD ) -


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PDF 120-0075X1 20081126b S3 diode smd diode code g6 9 smd G5 smd diode code g3 smd diode g6 Diode smd s6 46 s4 72 DIODE SMD SMD MARKING CODE s4 starter/generator smd MOSFET code S5
2008 - Diode smd s6 95

Abstract: DIODE S4 66 smd diode S6 48 Diode smd s6 46 Diode smd s6 68 Diode smd s4 95 SMD MARKING g5 DIODE 542 SMD smd diode code g3 smd diode g6
Text: S5 G6 Surface Mount Device G1 L3 S6 GWM 100-01X1- SMD L+ S1 G2 L- S2 G3 , L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS Maximum Ratings TJ = 25°C to , IF90 TC = 25°C ( diode ) TC = 90°C ( diode ) 90 68 A A Symbol Conditions , trench technology: -low RDSon -optimized intrinsic reverse diode · package: -high level of , Package options · 3 lead frames available - straight leads (SL) - SMD lead version ( SMD ) - bent leads


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PDF 100-01X1 160-0055X1 20081126c Diode smd s6 95 DIODE S4 66 smd diode S6 48 Diode smd s6 46 Diode smd s6 68 Diode smd s4 95 SMD MARKING g5 DIODE 542 SMD smd diode code g3 smd diode g6
2008 - Not Available

Abstract: No abstract text available
Text: S6 GWM 160-0055X1- SMD L+ S G2 L- S2 G3 S3 G4 L S4 G5 L2 S5 G6 , S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS Maximum Ratings , 120 A A IF25 IF90 TC = 25°C ( diode ) TC = 90°C ( diode ) 130 80 A A Symbol , low RDSon - optimized intrinsic reverse diode • package: - high level of integration - , options • 3 lead forms available - straight leads (SL) - SMD lead version ( SMD ) - bent leads (BL


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PDF 160-0055X1 20080527f
2008 - smd diode g6 DIODE S4 39 smd diode

Abstract: smd diode code g6 SMD MARKING CODE s4 GWM 120-0075P3 smd diode code g3 smd diode g6 smd diode S6 Control of Starter-generator DIODE marking S4 57 smd diode g5
Text: Device G1 L3 S6 GWM 120-0075P3- SMD L+ S1 G2 L- S2 G3 S3 G4 L1 S4 G5 , L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS Maximum Ratings TVJ = 25 , IF25 IF90 TC = 25°C ( diode ) TC = 90°C ( diode ) 120 78 A A Symbol Conditions , · MOSFETs in trench technology: -low RDSon -optimized intrinsic reverse diode · package , 1.6 Package options · 3 lead forms available - straight leads (SL) - SMD lead version ( SMD ) -


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PDF 120-0075P3 20081126f smd diode g6 DIODE S4 39 smd diode smd diode code g6 SMD MARKING CODE s4 GWM 120-0075P3 smd diode code g3 smd diode g6 smd diode S6 Control of Starter-generator DIODE marking S4 57 smd diode g5
2008 - Not Available

Abstract: No abstract text available
Text: S6 G5 L2 S5 G6 Surface Mount Device G L3 S6 GWM 120-0075P3- SMD L+ S , S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS Maximum Ratings , 90 A A IF25 IF90 TC = 25°C ( diode ) TC = 90°C ( diode ) 130 85 A A Symbol , intrinsic reverse diode • package: - high level of integration - high current capability 300 A max , straight leads (SL) - SMD lead version ( SMD ) - bent leads (BL) K/W K/W 20080527e -6 GWM


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PDF 120-0075P3 20080527e
2007 - smd diode code SL

Abstract: smd diode code mj
Text: package L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 75V ID25 = 125A RDSon typ. = 3.7mW Bent , Symbol TC = 25°C TC = 90°C TC = 25°C ( diode ) TC = 90°C ( diode ) Conditions Conditions TVJ = 25°C to 150 , reverse diode · package: -high level of integration -high current capability 300 A max. -aux. terminals , - straight leads (SL) - SMD lead version ( SMD ) - bent leads (BL) Characteristic Values (TVJ = 25 , dimensions. © 2007 IXYS All rights reserved -6 20070628b GWM 120-0075P3 Source-Drain Diode


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PDF 120-0075P3 20070628b smd diode code SL smd diode code mj
2007 - smd diode code mj

Abstract: SMD marking code 542 smd diode code g6 9 GWM 100-01X1 smd diode code g4 smd marking BL smd diode code s6 welding mosfet smd diode g6 DIODE S4 39 smd diode TR 505 diode
Text: Bent GWM 100-01X1 - SMD GWM 100-01X1 - BL G S G2 S2 G3 S3 G4 S4 G5 S5 G6 S6 L+ L- L L2 , L2 L3 G4 S4 G6 S6 L- Bent leads Surface Mount Device G2 S2 Straight leads MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 Symbol TC = 25°C TC = 90°C TC = 25°C ( diode ) TC = 90°C ( diode , : -low RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 3 lead frames available - straight leads (SL) - SMD lead version ( SMD ) - bent leads (BL


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PDF 100-01X1 160-0055P3 20070706a smd diode code mj SMD marking code 542 smd diode code g6 9 GWM 100-01X1 smd diode code g4 smd marking BL smd diode code s6 welding mosfet smd diode g6 DIODE S4 39 smd diode TR 505 diode
2007 - Not Available

Abstract: No abstract text available
Text: Device G L3 S6 GWM 100-01X1- SMD L+ S G2 L- S2 G3 S3 G4 L S4 G5 , L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS Maximum Ratings TJ = 25 , IF25 IF90 TC = 25°C ( diode ) TC = 90°C ( diode ) 90 68 A A Symbol Conditions , intrinsic reverse diode • package: - high level of integration - high current capability 300 A max , straight leads (SL) - SMD lead version ( SMD ) - bent leads (BL) K/W K/W VDS = ID·(RDS(on) + 2RPin


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PDF 100-01X1 160-0055X1 20070831a
2008 - Not Available

Abstract: No abstract text available
Text: Device G L3 S6 GWM 100-01X1- SMD L+ S G2 L- S2 G3 S3 G4 L S4 G5 , L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS Maximum Ratings TJ = 25 , IF25 IF90 TC = 25°C ( diode ) TC = 90°C ( diode ) 90 68 A A Symbol Conditions , intrinsic reverse diode • package: - high level of integration - high current capability 300 A max , straight leads (SL) - SMD lead version ( SMD ) - bent leads (BL) K/W K/W VDS = ID·(RDS(on) + 2RPin


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PDF 100-01X1 160-0055X1 20080527b
2007 - Not Available

Abstract: No abstract text available
Text: G5 L2 S5 G6 Surface Mount Device G L3 S6 GWM 100-01X1- SMD L+ S G2 L , S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS Maximum Ratings , 90 A A IF25 IF90 TC = 25°C ( diode ) TC = 90°C ( diode ) 130 85 A A Symbol , intrinsic reverse diode • package: - high level of integration - high current capability 300 A max , straight leads (SL) - SMD lead version ( SMD ) - bent leads (BL) K/W K/W 20070906c -6 GWM


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PDF 120-0075P3 20070906c
2011 - MTI150W40GC

Abstract: smd diode g6 S4 44 DIODE SMD
Text: package Preliminary data G1 S1 L+ G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 40V = 180A ID25 RDSon , ID110 IF25 IF90 IF110 Symbol TC = 25°C TC = 90°C TC = 110°C TC = 25°C ( diode ) TC = 90°C ( diode ) TC = 110°C ( diode ) Conditions Conditions TJ = 25°C to 150°C Maximum Ratings 40 ± 20 180 136 120 182 112 88 V , : -low RDSon -optimized intrinsic reverse diode · package: -high level of integration -high current , 2 lead forms available - straight leads (SL) - SMD lead version ( SMD ) -o s e min. typ. 1.9 2.8


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PDF 180-004X2 ID110 IF110 20110307c MTI150W40GC smd diode g6 S4 44 DIODE SMD
2011 - Not Available

Abstract: No abstract text available
Text: L2 L3 G4 S4 Straight leads G6 Surface Mount Device S6 L- Applications MOSFETs , ID25 ID90 TC = 25°C TC = 90°C 90 68 A A IF25 IF90 TC = 25°C ( diode ) TC = 90°C ( diode ) 90 68 A A AC drives • in automobiles - electric power steering - starter , • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - , 1.0 1.6 Package options • 2 lead frames available - straight leads (SL) - SMD lead version


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PDF 100-01X1 160-0055X1 20110505f
2011 - 85W100GC

Abstract: No abstract text available
Text: L+ G1 S1 G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS =100V = 90A ID25 RDSon typ. = 7.5mW , 25°C TC = 90°C TC = 25°C ( diode ) TC = 90°C ( diode ) Conditions Conditions TJ = 25°C to 150°C Maximum , equipment Features · MOSFETs in trench technology: -low RDSon -optimized intrinsic reverse diode · package , transfer ·Space and weight savings Package options · 2 lead frames available - straight leads (SL) - SMD lead version ( SMD ) -o e min. 2.5 0.1 0.2 90 30 30 130 95 290 55 0.4 0.4 0.007 1.3 1.0 1.6


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PDF 100-01X1 160-0055X1 20110505f 85W100GC
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