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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1139ACN Linear Technology LT1139A - Advanced Low Power 5V RS232 Drivers/Receivers with Small Capacitors (Includes LT1130 thru LT1141); Package: PDIP; Pins: 24; Temperature Range: 0°C to 70°C
LT1139ACSW Linear Technology LT1139A - Advanced Low Power 5V RS232 Drivers/Receivers with Small Capacitors (Includes LT1130 thru LT1141); Package: SO; Pins: 24; Temperature Range: 0°C to 70°C
LT1139ACSW#TR Linear Technology LT1139A - Advanced Low Power 5V RS232 Drivers/Receivers with Small Capacitors (Includes LT1130 thru LT1141); Package: SO; Pins: 24; Temperature Range: 0°C to 70°C
LT1139ACN#PBF Linear Technology LT1139A - Advanced Low Power 5V RS232 Drivers/Receivers with Small Capacitors (Includes LT1130 thru LT1141); Package: PDIP; Pins: 24; Temperature Range: 0°C to 70°C
LT1139ACSW#PBF Linear Technology LT1139A - Advanced Low Power 5V RS232 Drivers/Receivers with Small Capacitors (Includes LT1130 thru LT1141); Package: SO; Pins: 24; Temperature Range: 0°C to 70°C
LT1139ACSW#TRPBF Linear Technology LT1139A - Advanced Low Power 5V RS232 Drivers/Receivers with Small Capacitors (Includes LT1130 thru LT1141); Package: SO; Pins: 24; Temperature Range: 0°C to 70°C

smd diode 1139 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - 14N03LA

Abstract:
Text: Summary VDS RDS(on) max. SMD version ID 25 13.6 30 V A m Ideal for high-frequency dc/dc converters , =30A, VDD =25V, RGS =25 Reverse diode dv/dt IS =30A, VDS =20V, di/dt=200A/µs, Tjmax =175°C Gate , Thermal Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint , current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=20A VGS =4.5V, ID=20A, SMD , =10V, ID =30A VGS =10V, ID =30A, SMD version Gate resistance 2See figure 3. 3T =150°C for V jmax


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PDF IPI14N03LA IPP14N03LA IPB14N03LA IPB14N03LA 14N03LA 14N03LA Q67042-S4158 14N03L smd diode 1139 14N03 smd code diode 20a
1999 - 14n03la

Abstract:
Text: Product Summary VDS RDS(on) max. SMD version ID 25 13.6 30 V A m Ideal for high-frequency dc/dc , =30A, VDD =25V, RGS =25 Reverse diode dv/dt IS =30A, VDS =20V, di/dt=200A/µs, Tjmax =175°C Gate , Parameter Thermal Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min , current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=30A VGS =4.5V, ID=30A, SMD , =10V, ID =30A VGS =10V, ID =30A, SMD version Gate resistance 2See figure 3. 3T =150°C for V jmax


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PDF IPI14N03LA IPP14N03LA IPB14N03LA IPB14N03LA 14N03LA 14N03LA Q67042-S4158 smd diode 1139 14N03 14N03L Diode smd code 30a
A6H-4102-PM

Abstract:
Text: Omron 08 Cat 565-773 5/10/07 15:58 Page 726 Half-Pitch DIP Switch ( SMD Type) ­ A6H Text Half-Pitch DIP Switch ( SMD Type) ­ A6H Text Dimensions Ultra-low Profile, Half-pitch , A6H-6101 A6H-6102 8.85 8 A6H-8101 A6H-8102 11.39 10 Note: Order must be made , 727 Omron 08 Cat 565-773 5/10/07 15:58 Page 726 Half-Pitch DIP Switch ( SMD Type) ­ A6H Text Half-Pitch DIP Switch ( SMD Type) ­ A6H Text Dimensions Ultra-low Profile, Half-pitch


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PDF 101-P 101-PM A6H-2101 A6H-4101 A6H-61itial A117-E2-02A A6H-4102-PM A6H-2101 A6H-2102 Half-Pitch A6H-8102-PM A6H-8101 A6H-6101 A6H-4101-PM A6H-4101 A6H-0101
2000 - STR 6750

Abstract:
Text: BAV99 SOT-23 SMD (6862.5 2637.5) R0 D82 1N5408 DO201-15 DIODE (4531.25 4625 , , TDA16888, SiC Schottky diode , small signal N- & Pchannel MOSFETs. Contains 1 2 3 4 Features , - Silicon Carbide (SiC) Schottky diode as PFC diode - OptiMOS as synchronous rectification switches , semiconductors used are two CoolMOS SPB11N60C2 in parallel and a silicon carbide diode prototype SDB06S60 (6A , SMPS. It carries the power semiconductors (in SMD lead frame technology) and the passive devices of


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PDF AN-CoolMOS-06 TDA16888, Room14J1 Room1101 STR 6750 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS 4450 SMD SO-8 SMD 3825 LED SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout
SMD MOSFET DRIVE 4450 8 PIN

Abstract:
Text: BAV99 SOT-23 SMD (6862.5 2637.5) R0 D82 1N5408 DO201-15 DIODE (4531.25 4625 , diode thinQ!, small signal N- & Pchannel MOSFETs. Contains 1 2 3 4 Features / Parameters , - Silicon Carbide (SiC) Schottky diode thinQ! as PFC diode - OptiMOS as synchronous rectification , semiconductors used are two CoolMOS SPB11N60C2 in parallel and a silicon carbide diode prototype SDB06S60 (6A , SMPS. It carries the power semiconductors (in SMD lead frame technology) and the passive devices of


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PDF AN-CoolMOS-06 TDA16888, Room14J1 Room1101 SMD MOSFET DRIVE 4450 8 PIN A7 SMD TRANSISTOR transistor SMD R1D 6 PIN SMD IC FOR SMPS str 6750 smps power supply circuit 11N60 transistor SMD DK SMD a7 Transistor smd transistor A7 s 52 transistor SMD DK rc
2010 - TDA7850LV

Abstract:
Text: Flexiwatt25 ( SMD ) MOSFET output power stage Flexiwatt25 (Horizontal) Load dump voltage , TDA7850LV includes offset detector capability (or high side driver output) and is available in both SMD , ( SMD ) Tube TDA7850LVSMTR Flexiwatt25 ( SMD ) Tape and reel October 2010 Doc ID 17720 , MUTE OUT4- OUT4P-GND4 P-GND4 HSD HSD 25 25 D06AU1655 D94AU159A SMD Doc ID , 2.00 MIN. 0.175 0.070 1.05 0.42 0.57 1.20 24.25 29.30 0.029 0.014 0.031 0.935 1.139


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PDF TDA7850LV Flexiwatt25 TDA7850LV FLEXIWATT25 TDA7850l TDA7850 TDA7850LVH TDA785 smd mosfet FLEXIWATT25 equivalent DSASW003740 4x53
2010 - FLEXIWATT25

Abstract:
Text: ( SMD ) Output DC offset detection Load dump voltage Fortuitous open GND Reversed battery , offset detector capability (or high side driver output) and is available in both SMD and standard , . Package Flexiwatt25 (Vertical) Flexiwatt25 (Horizontal) Flexiwatt25 ( SMD ) Flexiwatt25 ( SMD ) Packing , IN4 IN3 AC-GND OUT3+ P-GND3 OUT3VCC OUT4+ MUTE OUT4P-GND4 HSD 25 Horizontal D06AU1655 SMD , 0.014 0.031 0.935 1.139 inch TYP. 0.177 0.074 0.055 0.035 0.015 0.040 0.945 1.150 0.669 0.503 0.031


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PDF TDA7850LV Flexiwatt25 FLEXIWATT25 SMD L5 tda785 TDA7850LV TDA7850LVH
1999 - smd diode 1139

Abstract:
Text: , single pulse ID =30A, VDD =25V, RGS =25  Reverse diode dv/dt IS =30A, VDS =20V, di/dt=200A/µs , - 100 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm2 , V GS=0V, VDS=15V, - 857 1139 Output capacitance Coss f=1MHz - 387 514 , Charge total, Sync. FET Qg(sync) V GS=0 to 5V, V DS=0.1V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM


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PDF IPU13N03LA Q67042-S4160 13N03LA smd diode 1139
1999 - IPD13N03LA

Abstract:
Text: W °C Avalanche energy, single pulse ID =30A, VDD =25V, RGS =25 Reverse diode dv/dt IS =30A , resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 4 , Gate Charge total, Sync. FET Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery charge 1See figure 16 Symbol Conditions min. Values typ. 38 857 387 69 6.6 7.5 18.4 3.4 max. 1139 514 104


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PDF IPD13N03LA IPD13N03LA 13N03LA Q67042-S4159 13n03la smd diode 1139
1999 - 13n03la

Abstract:
Text: W °C Avalanche energy, single pulse ID =30A, VDD =25V, RGS =25 Reverse diode dv/dt IS =30A , , junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 4) Symbol , total, Sync. FET Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery charge 1See figure 16 Symbol Conditions min. Values typ. 38 857 387 69 6.6 7.5 18.4 3.4 max. 1139 514 104 9.9 11.3 27.6 5.1 Unit


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PDF IPD13N03LA IPD13N03LA 13N03LA Q67042-S4159 13n03la
2001 - LME0305D

Abstract:
Text: Package Material LME1212D s No Heatsink Required s Internal SMD Construction s Toroidal Magnetics , 1139 1139 624 624 357 357 536 536 434 434 330 330 237 237 (pF) 25 25 30 30 38 38


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PDF 250mW LME0305D LME0305S LME0309D LME0309S LME0312D LME0312S LME0315D LME0315S LME0503D LME0305D LME0503S LME0503D LME0315S LME0315D LME0312S LME0312D LME0309S LME0309D LME0305S
1999 - S4160 equivalent

Abstract:
Text: , RGS =25 Reverse diode dv/dt IS =30A, VDS =20V, di/dt=200A/µs, Tjmax =175°C TC , resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA @ , GS=0V, VDS=15V, - 857 1139 Output capacitance Coss f=1MHz - 387 514 , Charge total, Sync. FET Qg(sync) V GS=0 to 5V, V DS=0.1V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM


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PDF IPU13N03LA Q67042-S4160 13N03LA S4160 equivalent 13n03l Q67042-S4160 13N03LA 13N03 IPU13N03LA fet to251 s4160
1999 - Q67042-S4160

Abstract:
Text: /µs V W °C Avalanche energy, single pulse ID =30A, VDD =25V, RGS =25 Reverse diode dv/dt IS , Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 , Charge 1) Gate charge total Output charge Gate Charge total, Sync. FET Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage , 18.4 3.4 max. 1139 514 104 9.9 22 27.6 5.1 Unit gfs Ciss Coss Crss td(on) tr td(off) tf V DS2


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PDF IPU13N03LA IPU13N03LA 13N03LA Q67042-S4160 Q67042-S4160 13n03la C1904
1999 - Not Available

Abstract:
Text: , single pulse ID =30A, VDD =25V, RGS =25  Reverse diode dv/dt IS =30A, VDS =20V, di/dt=200A/µs , SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm2 cooling area 4 , =15V, - 857 1139 Output capacitance Coss f=1MHz - 387 514 Reverse transfer , , Sync. FET Qg(sync) V GS=0 to 5V, V DS=0.1V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward


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PDF IPU13N03LA Q67042-S4160 13N03LA
2004 - 12V to 19 V DC to Dc

Abstract:
Text: kHrs 2279 2279 1139 1139 624 624 357 357 536 536 434 434 330 330 237 237 DIP SIP DIP SIP DIP SIP DIP , Material No Heatsink Required Internal SMD Construction Toroidal Magnetics Fully Encapsulated No


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PDF 250mW LME0505D LME0505S LME0509D LME0509S LME0512D 12V to 19 V DC to Dc sip weight
2008 - Flexiwatt27

Abstract:
Text: . Flexiwatt27 ( SMD ) Thanks to the BCD6 technology it is possible to integrate a high performance D/A , TDA7801H Flexiwatt27 (horizontal) Tube TDA7801SM Flexiwatt27 ( SMD ) Tube September 2008 , 26.25 29.30 0.029 0.014 0.031 1.014 1.139 22.87 19.37 15.90 7.95 0.869 0.731 0.610 , 1.20 26.25 29.30 0.031 1.014 1.139 22.44 10.85 15.90 7.95 0.852 0.40 0.610 0.303 , 5. TDA7801 Flexiwatt27 ( SMD ) mechanical data and package dimensions DIM. A B MIN. mm


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PDF TDA7801 PowerSO36 Flexiwatt27 Flexiwatt27 TDA78012 4X72 TDA7801PD TDA7801H TDA7801 ST 1153 sck 0512 JESD97 TDA7801SM
1999 - W9005

Abstract:
Text: modules, signal conditioners Converters (communication) SDHH Series Half Pitch SMD DIP Switch , DIM. A 6.31 (.248) 11.39 (.448) How to Order Environmental Characteristics Mechanical Life , ) CIRCUIT DIAGRAM Specifications are subject to change without notice. SDHH Series Half Pitch SMD DIP


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PDF 100mA, 50VDC 24VDC 100mohms 100Mo5° 10M/W9005 W9005 213B
2009 - sck 0512

Abstract:
Text: protection Table 1. Flexiwatt27 ( SMD ) The TDA7801 is a new BCD technology quad bridge amplifier , (vertical) Tube TDA7801H Flexiwatt27 (horizontal) Tube TDA7801SM Flexiwatt27 ( SMD ) Tube , 26.25 29.30 0.029 0.014 0.031 1.014 1.139 22.87 19.37 15.90 7.95 0.869 0.731 0.610 , 0.070 0.42 0.57 1.20 26.25 29.30 0.014 0.031 1.014 1.139 22.44 10.85 15.90 7.95 , 2 5/8 Package information TDA7801 Figure 5. Flexiwatt27 ( SMD ) mechanical data and


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PDF TDA7801 PowerSO36 Flexiwatt27 sck 0512 Flexiwatt27 0512 sck TDA7801H TDA78012 TDA7801SM TDA7801PD TDA7801 st car amplifier smd transistor a4
smd 27E

Abstract:
Text: drivers. They consist of a Gallium Arsenide infrared emitting diode optically coupled to a photosensitive , , MOC3041 Excellent Ift stability - IR emitting diode has low degradation. DIMENSIONS IN nrn , . 7500 VAC Peak (50-60Hz) INPUT DIODE Forward DC current. Reverse vo lta g e , TECHNOLOGIES INPUT DIODE Forward voltage VF AVf ' 1.3 -1.8 3.0 25 1.50 V m V/'C V PF PF IH=10/< A VF= 0 V , 1-139 (3UALITY TECHNOLOGIES CORP 57E D 74hbfl51 QaG3S0S Q VDE APPROVED ZERO-CROSSING TRIACS


OCR Scan
PDF MCP3030* MCP3040/0Z* 15mAMCP3031 MCP3041/1Z MCP3032 MCP3042/2Z MCP3031 MCP303Z smd 27E MCP3041 smd TRANSISTOR 27e c2075 transistor C2078 MCP3040 S7E SMD TRANSISTOR MOC3041 optocoupler transistor C2075 optocoupler moc3041
2006 - 213B

Abstract:
Text: compliant* SDHH Series Half Pitch SMD DIP Switch Electrical Characteristics Electrical Life .1 , ) SDHH-8 8 11.39 (.448) 8.89 (.35) DIP How to Order SDH H - 8 - T R 1 2 3 4 5 6 7 8 , specific applications. 35-60 Sec. 30-40 Sec. 25 SDHH Series Half Pitch SMD DIP Switch


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PDF
2005 - Not Available

Abstract:
Text: PL IA NT Features Eight and four positions available Gold plated contacts offer high reliability Low contact resistance Just 1.5 mm total height Half pitch of 1.27 mm(.050 in.) *R oH S CO M RoHS compliant* SDHH Series Half Pitch SMD DIP Switch Electrical Characteristics Electrical Life , 6.31 (.248) 11.39 (.448) DIM. B 3.81 (.15) 8.89 (.35) ON DIP How to Order SDH H - 8 - T R , specific applications. SDHH Series Half Pitch SMD DIP Switch Packaging Specifications 7.00 ± 0.13


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PDF
2004 - Not Available

Abstract:
Text: Features Eight and four positions available Gold plated contacts offer high reliability Low contact resistance Just 1.5 mm total height Half pitch of 1.27 mm(.050 in.) RoHS compliant SDHH Series Half Pitch SMD DIP Switch Electrical Characteristics Electrical Life .1,000 operation , Dimensions MODEL NO. SDHH-4 SDHH-8 POS. 4 8 DIM. A 6.31 (.248) 11.39 (.448) DIM. B 3.81 (.15) 8.89 (.35 , specific applications. SDHH Series Half Pitch SMD DIP Switch Packaging Specifications 7.00 ± 0.13


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PDF
2000 - LME0305D

Abstract:
Text: Internal SMD Construction s Toroidal Magnetics s Fully Encapsulated s No External Components Required s , kHrs 2767 2767 1250 1250 655 655 367 367 2637 2637 2279 2279 1139 1139 624 624 357


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PDF 250mW LME0305D LME0503S LME0503D LME0315S LME0315D LME0312S LME0312D LME0309S LME0309D LME0305S
213B

Abstract:
Text: Features ■Eight and four positions available ■Gold plated contacts offer high reliability ■Low contact resistance ■Just 1.5 mm total height ■Half pitch of 1.27 mm(.050 in.) ■RoHS compliant * SDHH Series Half Pitch SMD DIP Switch Electrical Characteristics Electrical Life , (.248) 3.81 (.15) SDHH-8 8 11.39 (.448) 8.89 (.35) How to Order SDH H - 8 - T R Model Actuator - H , SMD DIP Switch ^oxjFeisrs Packaging Specifications 7.00 ± 0.13 224 ♦ 0.10 (0.088±.004) 5' MAX


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PDF 2002/95/EC 213B oven switch circuit diagram smd 8n
3.14001.001

Abstract:
Text: 3.00 676-9107 3.14100.031 RF 15 Gold Spot Red 5.32 4.61 4.25 676-4152 1.14100.003 8 SMD Flush 3.12 , Inward Extended 4.18 3.62 3.34 676-9110 3.14100.040 RF 15 Silver Spot Blue 14.24 12.34 11.39 676-9102 1.14100.013 8 SMD Extended 2.10 1.82 1.68 676-9111 3.14100.041 RF 15 Silver Spot Red 4.39 3.81 3.52 676-4153 , 3.52 676-4155 1.14001.003 12 SMD Flush 1.77 1.55 1.41 676-4158 3.14001.001 RF 19 Gold None Clear 2.71 , RF 19 Gold Spot Red 5.32 4.61 4.25 676-9105 1.14001.013 12 SMD Extended 1.96 1.70 1.57 676-9115


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PDF PTS635SL25SM* PTS635SK25SM† MA00L1NZQD MC00L1NZQD MB00L1NZQD MD00L1NZQD MA00L1NCQD PTS125SM43† MC00L1NCQD PTS125SM85† 3.14001.001 racon 12 RACON PTS453SL38 676-9102 3.14001.043 3.14001.033 3.14001.032 3.14001.006 Tactile Switches
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