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smd diode 106a Datasheets Context Search

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smd diode 106a

Abstract: smd 106a BYG90-90
Text: The BYG 90-90 is a S chottky barrier rectifier diode , fabricated in planar technology, and encapsulated in the rectangular S O D 106A plastic SMD package. · Guard ring protected · P lastic SM D , DISCRETE SEMICONDUCTORS GMTâ SlnlEET BYG90-90 Schottky barrier rectifier diode Product , barrier rectifier diode FEATURES · Low sw itching losses · High breakdow n voltage · C apability of , Ir s m Tstg Tj Notes 1. 2. R efer to S O D 106A standard m ounting conditions. For S chottky b


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PDF BYG90-90 smd diode 106a smd 106a BYG90-90
2009 - 4N0605

Abstract: smd diode 106a 107 10V smd 4N06 smd diode marking DD smd 106a PG-TO263-3-2 IPP80N06S4-05 IPI80N06S4-05 IPB80N06S4-05
Text: DS 60 V R DS(on),max ( SMD version) 5.4 m ID 80 A Features · N-channel - , - 1.4 Thermal resistance, junction ambient, leaded R thJA - - - 62 SMD , =80A, SMD version - 4.4 5.4 Rev. 1.0 page 2 2009-03-24 IPB80N06S4-05 IPI80N06S4 , =0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=80A, T j=25°C 0.6 0.95 1.3 V


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PDF IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0605 IPI80N06S4-05 4N0605 smd diode 106a 107 10V smd 4N06 smd diode marking DD smd 106a PG-TO263-3-2 IPP80N06S4-05 IPI80N06S4-05 IPB80N06S4-05
2007 - Not Available

Abstract: No abstract text available
Text: Bulletin I2210 03/05 SAFEIR Series 25ETS12SPbF INPUT RECTIFIER DIODE Lead-Free ("PbF" suffix , Document Number: 94342 D2 Pak ( SMD -220) www.vishay.com 1 25ETS12SPbF SAFEIR Series Bulletin , Forward Current IFSM Conditions @ TC = 106 ° C, 180° conduction half sine wave Max. Peak One , ) D2Pak ( SMD -220) 25ETS12S www.vishay.com 2 25ETS12SPbF SAFEIR Series 150 Maximum Allowable , ) 2X 2 D Pak ( SMD -220) Dimensions in millimeters and inches 2.54 (0.10) 2X Marking


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PDF I2210 25ETS12SPbF 25ETS12SPbF 08-Mar-07
2007 - Not Available

Abstract: No abstract text available
Text: Bulletin I2158 rev. A 08/02 SAFEIR Series 25ETS.S INPUT RECTIFIER DIODE Description , 25°C TJ D2 Pak ( SMD -220) (*) for higher voltage up to 1600V contact factory Document , Conditions @ TC = 106 ° C, 180° conduction half sine wave 10ms Sine pulse, rated VRRM applied 10ms Sine , surface, smooth and greased Kg-cm (Ibf-in) D2Pak ( SMD -220) www.vishay.com 2 25ETS.S SAFEIR , (0.961) SMD -220 Tape & Reel When ordering, indicate the part number, part orientation, and the


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PDF I2158 25ETS. 20ded 08-Mar-07
2014 - p0603v24

Abstract: No abstract text available
Text: Paste Type No Clean Pad Protective Finish OSP (Entek Cu Plus 106A ) Tolerance - Edge To , include transient voltage suppressor array (TVS arrays) avalanche breakdown diode , steering diode TVS array and electronics SMD chip fuses. These components deliver circuit protection in electronic systems


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PDF P0603V24 P0603V24 IEC61000-4-2.
2014 - Not Available

Abstract: No abstract text available
Text: Clean Pad Protective Finish OSP (Entek Cu Plus 106A ) Tolerance - Edge To Corner Ball ±50µm , voltage suppressor array (TVS arrays) avalanche breakdown diode , steering diode TVS array and electronics SMD chip fuses. These components deliver circuit protection in electronic systems from numerous


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PDF P0603V24 P0603V24 IEC61000-4-2.
2012 - Not Available

Abstract: No abstract text available
Text: ) 0.330mm Round Solder Paste Type No Clean Pad Protective Finish OSP (Entek Cu Plus 106A , include transient voltage suppressor array (TVS arrays) avalanche breakdown diode , steering diode TVS array and electronics SMD chip fuses. These components deliver circuit protection in electronic systems


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PDF P0402V IEC61000-4-2.
2012 - Not Available

Abstract: No abstract text available
Text: Plus 106A ) Tolerance - Edge To Corner Ball ±50µm Solder Ball Side Coplanarity ±20µm , include transient voltage suppressor array (TVS arrays) avalanche breakdown diode , steering diode TVS array and electronics SMD chip fuses. These components deliver circuit protection in electronic systems


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PDF P0402V IEC61000-4-2.
1999 - smd diode 106a

Abstract: TRANSISTOR SMD MARKING CODE 7A BSO4822
Text: ID =12.7 A , VDD =25V, RGS =25 Reverse diode dv/dt kV/µs IS =12.7A, VDS =24V, di/dt=200A/µs , resistance, junction - soldering point RthJS SMD version, device on PCB: K/W RthJA Electrical , VGS =4.5V, ID = 10.6A Drain-source on-state resistance VGS =10V, ID=12.7A 1Device on 40mm*40mm , 5V Output charge Qoss VDS =15V, ID =12.7A, VGS =0 Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed


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PDF BSO4822 Q67042-S4095 smd diode 106a TRANSISTOR SMD MARKING CODE 7A BSO4822
1999 - smd diode 106a

Abstract: Q67042-S4166 SPP15P10P
Text: =25°C Avalanche energy, single pulse mJ ID =-15 A , VDD =-25V, RGS=25 Reverse diode dv/dt kV/µs IS , RthJC SMD version, device on PCB: K/W RthJA @ min. footprint @ 6 cm 2 cooling area 1 , on-state resistance VGS =-10V, ID =- 10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer , VDD =-80V, ID =-15A, nC VGS =0 to -10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward


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PDF SPP15P10P P-TO220-3-1 Q67042-S4166 smd diode 106a Q67042-S4166 SPP15P10P
1999 - BSO4822

Abstract: smd diode 106a
Text: energy, single pulse mJ ID =12.7 A , VDD =25V, RGS =25 Reverse diode dv/dt kV/µs IS =12.7A , 50 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device , VGS =20V, VDS=0 Drain-source on-state resistance VGS =4.5V, ID = 10.6A Drain-source on-state , Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, IF=1.9A - 0.83 1.2 V


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PDF BSO4822 Q67042-S4095 BSO4822 smd diode 106a
1999 - smd diode 106a

Abstract: No abstract text available
Text: =12.7 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =12.7A, VDS =24V, di/dt=200A/µs, Tjmax , Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min , , VDS =0V Drain-source on-state resistance VGS =4.5V, ID= 10.6A Drain-source on-state resistance , VDS =15V, ID =12.7A, VGS =0V V(plateau) VDD =15V, ID=12.7A V Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse


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PDF BSO4822 Q67042-S4095 smd diode 106a
Not Available

Abstract: No abstract text available
Text: LOW PROFILE SHIELDED SMD POWER INDUCTORS ASPI-104S Pb RoHS Compliant | | | | | | | | | | | | | APPLICATIONS: • Desktop, notebook, servers • Network hubs, bridges, routers • XDSL, PBX base stations • Power source circuits, DC/DC converters, DC/AC inverters • Digital TV, DVD, Modem, setup box , SHIELDED SMD POWER INDUCTORS ASPI-104S Pb RoHS Compliant , C D ASPI -104 S-xxx 10. 6± 0.1 10.6 ± 0.1 4.6± 0.1 11. 5± 0.1 1.75± 0.1


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PDF ASPI-104S ISO9001
2008 - Not Available

Abstract: No abstract text available
Text: =-15 A , VDD =-25V, RGS=25 Reverse diode dv/dt IS =-15A, VDS =-48V, di/dt=-200A/µs, Tjmax =150°C , Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint , resistance VGS =-10V, ID =- 10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm , Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery


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PDF SPP15P10P PG-TO220-3 SPP15P10P 15P10P -200A/
1999 - 15P10P

Abstract: SPP15P10P smd diode 106a
Text: , single pulse mJ ID =-15 A , VDD =-25V, RGS=25 Reverse diode dv/dt kV/µs IS =-15A, VDS , - - 75 - - 45 Characteristics Thermal resistance, junction - case RthJC SMD , =-10V, ID =- 10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper , plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, |IF | = |IS | - -0.94


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PDF SPP15P10P PG-TO220-3-1 SPP15P10P 15P10P 15P10P smd diode 106a
1999 - Not Available

Abstract: No abstract text available
Text: , single pulse mJ ID =50A, VDD =25V, RGS =25  Reverse diode dv/dt kV/µs IS =50A, VDS , , leaded RthJA - - 100 SMD version, device on PCB: RthJA @ min. footprint - - , is able to carry I D= 106A .  Gate resistance 2See figure 3. 3T =150°C for V jmax GS<-5V , Charge total, Sync. FET Qg(sync) V GS=0 to 5V, V DS=0.1V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM


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PDF IPD05N03LA Q67042-S4144 05N03LA
1999 - pn0307

Abstract: ANPS071E BSPD50N03S2-07 SPD50N03S2-07
Text: Repetitive avalanche energy, limited by Tjmax 2) EAR 13 Reverse diode dv/dt dv/dt 6 Gate , , leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 , bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 106A at 25°C, for detailed information see , =50A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS


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PDF SPD50N03S2-07 Q67040-S4430 PN0307 BSPD50N03S2-07, SPD50N03S2-07 pn0307 ANPS071E BSPD50N03S2-07
1999 - smd diode 106a

Abstract: D106A 05n03l
Text: /µs V W °C Avalanche energy, single pulse ID =50A, VDD =25V, RGS =25 Reverse diode dv/dt IS , Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 , 1Current limited by bondwire; with an R thJC = 1.6K/W the chip is able to carry I D= 106A . jmax GS<-5V , charge Gate Charge total, Sync. FET Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery charge 1See


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PDF IPD05N03LA IPD05N03LA 05N03LA Q67042-S4144 smd diode 106a D106A 05n03l
1999 - BSO4822

Abstract: No abstract text available
Text: energy, single pulse mJ ID =12.7 A , VDD =25V, RGS =25 Reverse diode dv/dt kV/µs IS , soldering point RthJS SMD version, device on PCB: K/W RthJA 10 sec. @ 6 cm 2 cooling area , Gate-source leakage current VGS =20V, VDS=0V VGS =4.5V, ID= 10.6A Drain-source on-state resistance , charge Qoss VDS =15V, ID =12.7A, VGS =0V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode


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PDF BSO4822 Q67042-S4095 BSO4822
1999 - smd diode 106a

Abstract: Q67042-S4166 SPP15P10P
Text: , single pulse mJ ID =-15 A , VDD =-25V, RGS=25 Reverse diode dv/dt kV/µs IS =-15A, VDS , - - 75 - - 45 Characteristics Thermal resistance, junction - case RthJC SMD , =-10V, ID =- 10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper , plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, |IF | = |IS | - -0.94


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PDF SPP15P10P PG-TO220-3-1 Q67042-S4166 smd diode 106a Q67042-S4166 SPP15P10P
1999 - PN0307

Abstract: INFINEON PART MARKING smd diode 106a INFINEON PART MARKING to252 ANPS071E BSPD50N03S2-07 PG-TO252-3-11 SPD50N03S2-07
Text: Repetitive avalanche energy, limited by Tjmax 2) EAR 13 Reverse diode dv/dt dv/dt 6 Gate , ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - , bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 106A at 25°C, for detailed information see , VDD =24V, ID =50A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward


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PDF SPD50N03S2-07 PG-TO252-3-11 SPD50N03S2-07 PG-TO252-3-11 Q67040-S4430 PN0307 BSPD50N03S2-07, PN0307 INFINEON PART MARKING smd diode 106a INFINEON PART MARKING to252 ANPS071E BSPD50N03S2-07
1999 - marking code INFINEON TO252

Abstract: No abstract text available
Text: Tjmax 2) Reverse diode dv/dt IS=50A, VDS=24V, di/dt=200A/µs, Tjmax=175°C EAR dv/dt 13 6 kV/µs , resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min , able to carry I D= 106A at 25°C, for detailed information see app.-note ANPS071E available at , 21.1 46.5 V V(plateau) VDD =24V, ID=50A Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery


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PDF SPD50N03S2-07 SPD50N03S2-07 Q67040-S4430 PN0307 50Aonly BSPD50N03S2-07, marking code INFINEON TO252
1999 - pn0307

Abstract: ANPS071E IPD50N03S2-07 PG-TO252-3-11
Text: resistance, junction ambient, leaded R thJA - - 100 SMD version, device on PCB R thJA , D=50 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0 V, I F=50 A, T j=25 °C - , able to carry 106A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com , . capacitances 12 Typical forward diode characteristicis C = f(V DS); V GS = 0 V; f = 1 MHz IF = f(VSD


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PDF IPD50N03S2-07 PG-TO252-3-11 PN0307 pn0307 ANPS071E IPD50N03S2-07 PG-TO252-3-11
1999 - smd diode 106a

Abstract: No abstract text available
Text: =-15 A , VDD =-25V, RGS=25 Reverse diode dv/dt IS =-15A, VDS =-48V, di/dt=-200A/µs, Tjmax =150°C , Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling , resistance VGS =-10V, ID =- 10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm , Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS


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PDF SPP15P10P P-TO220-3-1 SPP15P10P Q67042-S4166 -200A/ smd diode 106a
2008 - 1614G

Abstract: No abstract text available
Text: =-15 A , VDD =-25V, RGS=25 Reverse diode dv/dt IS =-15A, VDS =-48V, di/dt=-200A/µs, Tjmax =150°C , Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint , resistance VGS =-10V, ID =- 10.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm , Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery


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PDF SPP15P10P PG-TO220-3 SPP15P10P 15P10P -200A/ 1614G
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