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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
0717422003 0717422003 ECAD Model Molex CONN RECPT 84POS 1MM SMD
5050060810 5050060810 ECAD Model Molex CONN PLUG 8POS SMD GOLD
5033950310 5033950310 ECAD Model Molex CONN RCPT SMD 3CKT BEIGE
0528850774 0528850774 ECAD Model Molex CONN RECPT 70POS SMD GOLD
0791098604 0791098604 ECAD Model Molex CONN RCPT GOLD 10CKT SMD
0528852474 0528852474 ECAD Model Molex CONN RECPT 240POS SMD GOLD

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2006 - transistor 228

Abstract: SMD Transistors code complementary npn-pnp smd transistor sot Surface mount NPN/PNP complementary transistor TRANSISTOR SMD CODE 15 smd transistor 5 lead smd 5 lead transistor dual transistor sot npn-pnp-transistors
Text: the new SOT-228 eight (8) lead SMD package Sample Devices · High Voltage and High Current , SOT-228 eight (8) lead SMD case. These devices provide space saving over standard devices in the SOT , *BVCES (V) (V) (V) ICBO @ *I CEV @ (nA) MIN TYPE NO. BVEBO MIN MIN MAX


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PDF OT-228 CYTA4494D CYTA44D CYT5551D CYT5551HCD OT-223 CYTA44D, CYTA4494D, CYT5551D, transistor 228 SMD Transistors code complementary npn-pnp smd transistor sot Surface mount NPN/PNP complementary transistor TRANSISTOR SMD CODE 15 smd transistor 5 lead smd 5 lead transistor dual transistor sot npn-pnp-transistors
Not Available

Abstract: No abstract text available
Text: ^ ^ = 25°C to 150°C = 25°C to 150°C; RG E = 1 MO 300 300 ±20 ±30 56 28 112 'cm = 5 6 TQ-247 SMD , .) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 260 Md Weight Mounting torque (M3) o 1.13/10Nm/lb.in. TO-247 AD TO-247 SMD 6 4 g g Features · International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD · High current handling capability · Newest , T BV d v ces VGE(ttl) ' ces lc lc = 250 [iA, VQ E= 0 V =25 0 hA,V ce=V ge = 25° C Tj = 125


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PDF IXGH28N30 IXGH28N30S TQ-247 28N30S) O-247
Not Available

Abstract: No abstract text available
Text: Ratings 300 300 ±20 ±30 56 28 112 'c m = 5 6 V V V V A A A A TO-247 SMD (28N30AS) f C (TAB) 90 , lc lc = 250 [iA, VQ E= 0 V =2 5 0 ^A ,V ce=V ge Tj = 2 5 X Tj = 125X 300 2.5 5 200 1 ±100 1 , , Rs = Roff = 4.7 Q, t, E._ ^thJC ^U iCK TO-247 SMD Outline Remarks: Switching times may


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PDF IXGH28N30A IXGH28N30AS O-247 28N30AS)
Not Available

Abstract: No abstract text available
Text: Collector Features · International standard package JEDEC TO-247 AD, and TO-247 SMD for surface mount · , 1.13/10 Nm/lb.in. TO-247 SMD TO-247 4 6 300 g g ° c Applications Symbol Test Conditions , nC nC ns ns 300 300 6.0 ns ns mj ns ns mj ns ns mj 0.5 K/W TO-247 SMD Outline t.2 - VC E = 2 5 V , . ; 80 / Y fr i Vq e = 15V 13V f : 40 3 V CE-V o lts ! t 11 V 9V 1111 1 1 1 1


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PDF IXSH50N60B IXSH50N60BS
30N60

Abstract: No abstract text available
Text: IXGH30N60BU1S v CES vCE(sat) tfi ^C25 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol VC E S VC , packages JED EC TO-247 SMD surface mountable and JEDEC TO-247 AD * High frequency IGBT and antiparallel , soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD TO-247 SMD TO-247 AD , 6.15 BSC TO-247 SMD Outline 1 _ R ^UiC K Reverse Diode (FRED) Symbol V F 0.25 Test , ) VGE-Volts V CE-V o lts © 1997 IXYS All rights reserved IXGH3QN60BU1 ÍXGH30N6QBU1S Fig. 7


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PDF IXGH30N60BU1 IXGH30N60BU1S O-247 30N60BU1S) IXGH3QN60BU1 IXGH30N6QBU1S 30N60
smd transistor A11b

Abstract: smd diode code 1B2 transistor book transistor ic equivalent book
Text: ^CEO ^GER AdES ^ CEV ^CM fass fa fasO fau fas h 1k Io fa ^EM fa - ^G1SS ± ^G2SS IP 3 , operation as a switch, with a resistance interposed between base and emitter. IB Figure 9 ^ cev (^ cev ) Collector-emitter reverse voltage (collector emitter cutoff current) with blocked emitter , RF and AF Transistors and Diodes in SMD Packages In SMD packages the heat is primarily dissipated


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SIEMENS thyristor

Abstract: transistor smd AFE smd transistor G9
Text: leakage current 61 i2 lB /B 1 /B2 /BM Ic ¡ cbo /CEO / CER /CES / CEv /CM /D /q s s lE , !> " ^G 1S (P ) - V 'G2S(P) VCB VCBO v'cc ^D S ''DG ^G S VCE VCEO ''CER ''C E S ' 'CEsat ^ CEV V'lN , , with a resistance interposed between base and emitter. ^ cev U cej) Collector-emitter reverse , Semiconductor Group 70 SIEMENS 9 Technical Information RF and AF Transistors and Diodes in SMD Packages In SMD packages the heat is primarily dissipated via the pins. The total thermal resistance in


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1N9143

Abstract: No abstract text available
Text: to meet production requirements (cost effective solution or SMD ), this product is also offered in a , CHARACTERISTICS M27C1001 Symbol Parameter Test condition CE= OE=V il OE=V il CE=V il CE=V il CE=OE=V il


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PDF M27C1001 1024K M27C1001 PDIP32 PLCC32 1N9143
mgra

Abstract: PLCC32-32-LEAD M87C257-20F1 MGRA 21 M87C257-12F1
Text: programming procedure. In order to meet production requirements (cost effective solution or SMD ), this product , condition CE= OE=V il OE=V il CE=V il CE=V il CE= 0 I = V il 0 0 35 7 20 20 87C257 -10 -12 -15 -20


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PDF 32Kx8) M87C257 28-pin transparent7C257-15C6 DIP28 mgra PLCC32-32-LEAD M87C257-20F1 MGRA 21 M87C257-12F1
M27C1024

Abstract: No abstract text available
Text: programming procedure. In order to meet production requirements (cost effective solution or SMD ), product is , il OE=V il CE=V il CE=V il ns ns ns ns tC E tO E tD F tO H C Ë = OE = V il 0 0


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PDF 27C1024 1024K M27C1024 576-bit 024-15XC6 PLCC44 PLCC44
27c516

Abstract: M27C516
Text: solution or SMD ), this product is also offered in a PLCC Plastic package, for one Time Programming only , output float Output hold from ad dress CE=OE=V il OE=V il CE=V ,l CE=V il CÊ= Ô Ë = V il 0 0 10 Max


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PDF M27C516 100ns. M27C516 FDIP40-W 40-PIN M27C516-10XC1 M27C516-12XC1 M27C516-15XC1 M27C516-20XC1 27c516
M27C256B-10F1

Abstract: M27C256B M27C256B-15XF1 M27C256B-20XF1 M27C256B-15B1 M27C256B-15F6
Text: SMD ), this product is also offered in a plastic package, either Plastic DIL, SO or PLCC, for One Time , Address ÖE=Vil ÖE=V il CE=V il CE=V iL CE= 0 0 100 100 40 30 0 0 120 120 50 40 0 0 150 150 60


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PDF M27C256B 28-PIN M27C256B PLCC32-32-LEAD PS028-28 M27C256B-10F1 M27C256B-15XF1 M27C256B-20XF1 M27C256B-15B1 M27C256B-15F6
M27C1000

Abstract: 27c1000a
Text: SMD ), this product is also offered in a plastic package, either Plastic DIP or PLCC, for one time , M27C1000 Symbol Parameter Test condition CË=ÔË=V il OE=V il CE=V il CE=V il C Ë = Ô E = V il -12 Min


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PDF 1024K 120ns. M27C1000 PLCC32-32-LEAD 27c1000a
2001 - transistor smd bc rn

Abstract: SMD transistor y11 g21 SMD Transistor SMD Transistor Y12 SMD transistor BC RN transistor ic equivalent book smd y12 GaAs tunnel diode Common collector configuration basic applications of ujt
Text: switch, with a resistance interposed between base and emitter. CEV V CEV + _ _ + V BE , Transistors and Diodes in SMD Packages In SMD packages the heat is primarily dissipated via the pins. The


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Not Available

Abstract: No abstract text available
Text: AUSTIN SEMICONDUCTOR, INC. FLASH MODULE AVAILABLE AS MILITARY SPECIFICATIONS · · SMD 5962-94612 MIL-STD-883 AS8F512K32 512K x 32 FLASH PIN ASSIGNMENT (Top View) 68 Lead CQFP Z CE=V jjj , output from the device is disabled and the , . The sector protect mode is activated when WE=Vffl, CE=V il , and address pin A9 and control pin OE are , terminates on the raising edge of WE. Verification of sector protection is activated when WE=Vffl, CE=V il


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PDF MIL-STD-883 AS8F512K32 150ns 00oc/w 512Kx32, 512Kx8 4/99-E
27c1000

Abstract: No abstract text available
Text: production requirem ents (cost effective solution or SMD ), this product is also offered in a plastic , OE to Output Delay CE=V il 60 65 70 100 ns tD F (2) OE High to Output Float CE=V il 0 60 ns t0 H Output Hold from_ Address, CE or OE Whichever occured first


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PDF 1024K 120ns. 27C1000 DIP32 M27C1000-15XC1 PLCC32 M27C1000-20XC1 M27C1000-15C1
Not Available

Abstract: No abstract text available
Text: production requirements (cost effective solution or SMD ), this product is also offered in a plastic package , 100 120 150 200 ns tO E OE to Output Delay CE=V il 40 50 60 70 ns tDF(2) OE High to Output Float CE=V il 0 40 ns to H Output Hold from_ Address


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PDF M87C257 32Kx8) 200nA M87C257 M87C21 M87C257-15XC1 PLCC32 M87C257-15C1
Not Available

Abstract: No abstract text available
Text: procedure. In order to meet production requirem ents (cost effective solution or SMD ), this product is , OÉ to Output Delay CE=V il 40 50 60 70 100 ns OÈ High to Output Float CE=V il 0 60 ns Output Hold from Address CE= OE=V il 0 tAC C tD F <2) to H


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PDF 27C256B PS028 M27C256B-15C6 M27C256B-15C1 M27C256B-15XC1 M27C256B-12XB1 28-PIN M27C256B PLCC32-32-LEAD
1997 - HALL EFFECT 21E

Abstract: thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG
Text: recovery time V(BR) CEV Collector-emitter breakdown voltage at a defined reverse voltage between base , IB = 0 VBE First breakdown IB<0 IE 95 10246 VCEOmax [ V(BR)CEO V(BR) CEV V(BR , devices ( SMD ) are components which are mounted directly on the surface of a printed circuit board , bath (overhead soldering). The SMD technology offers the following main advantages: If the device


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PDF 26-Feb-97 HALL EFFECT 21E thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG
Not Available

Abstract: No abstract text available
Text: effective solution or SMD ), product is also offered in PLCC plastic package for One Tim e Pro­ gram m ing , tD F O E High to O utput float CE=V ,l 0 to H O utput hold from address CE or OE w


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PDF 27C1024 1024K 27C1024 576-bit 40-PIN M27C1024 27C1024-20XC1 PLCC44
Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Text: /, SMD DATA BOOK 1999 b LOW V f IN SMA, SMB, SM C DPAK CASE 7 m m % s c h o t t k y r e c t , Watt Transient Voltage Suppressors in SMB case Central's first offering ofTVS in SMD form, specified , Rectifiers 16 Amps in SMD ?! Finally, a package that is just right for designs where a DPAK is borderline , committed to building Selected, Special, and Custom SMDs. SELECTED SMD A selected SMD is a standard device , ±5% and the customer requires ±2% tolerance. SPECIAL SMD A Special SMD is required when a selection of


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PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
28C010-200

Abstract: 28C010-150 28C010-120 28c010 28C010-250 M28C010
Text: bit 1/07 written. Note: 1. Hardware chip clear is an optional feature and guaranteed on SMD product , output in Hi-Z 0 50 0 55 0 55 0 55 ns CE-V ^ «OH Output Hold from Address Change, Chip Enable, or Output


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PDF 28C010 1024K 28C010) 28C010H) 28C010 128Kx8EEPR0M 400103/A 28C010-200 28C010-150 28C010-120 28C010-250 M28C010
k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Text: för skruvmejselinställning ( CEV ) Eller sexkantigt centrumhål (CFH)för axel eller tumhjul 2X1 moduler pris vid köp av Best nr CEV -001 100R CEV -002 220R CEV -003 470R CEV -004 1K CEV -005 2K2 CEV -006 4K7 CEV -007 10K CEV -008 22K CEV -009 47K CEV -010 100K CEV -011 220K CEV -012 470K CEV -013 1M CEV -014 2M2 1- 107.80 7.80 7.80 7.80 7.80 7.80 7.80 7.80 7.80 7.80 7.80


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PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
smd marking code cev

Abstract: 5962-8976404MYA qml-38535 5962-8976408MYA GDIP1-T48
Text: DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings ( SMD 's). MIL-HDBK-780 - Standard , -103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the , 5.0 ma 01,03, 05,07 10 Output leakage current I'LO I VCC= 5.5V, CE=V |H, GND < VOUJ < Vqq 1,2 , class M devices. 6.2 Configuration control of SMD 's. All proposed changes to existing SMD 's will be , configuration control and which SMD 's are applicable to that system. DSCC will maintain a record of users and


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PDF 0G32320 T0Q470Ã smd marking code cev 5962-8976404MYA qml-38535 5962-8976408MYA GDIP1-T48
Not Available

Abstract: No abstract text available
Text: AUSTIN SEMICONDUCTOR, INC. AS8F512K32 512K x 32 FLASH FLASH MODULE AVAILABLE AS MILITARY SPECIFICATIONS · SMD 5962-94612 ·MIL-STD-883 PIN A SSIG N M EN T (Top View) 68 Lead CQFP uo^cuco^-Ln|Coz|^|yvDh'CO C^2` -) Z I /D I /D I/D I/D I /D I /D I /D I /D GND I/D I /D I/D I/D , 29 30 31 FEATURES SMD 5962-94612 Pending Fast Access Times: 70, 90, 120 and 150ns Operation with , W E=Vm, CE=V il , and address pin A9 and control pin OE are forced to Vro. The sector-select address


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PDF AS8F512K32 MIL-STD-883 6/26-D DSO00070
Supplyframe Tracking Pixel