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Part Manufacturer Description Datasheet Download Buy Part
UDT020A0X3-SRZ GE Critical Power CONV DIGITAL 5.5V 20A POL SMD
APXS003A0X-SRDZ GE Critical Power CONVER DC/DC 0.59 5.5V @ 3A SMD
LM20C-EVAL Texas Instruments 2.4V, 10A, SC70, micro SMD Temperature Sensor
LM20S-EVAL Texas Instruments 2.4V, 10A, SC70, micro SMD Temperature Sensor
LM4930ITL/NOPB Texas Instruments SPECIALTY CONSUMER CIRCUIT, PBGA36, MICRO SMD-36
LM4857ITL/NOPB Texas Instruments SPECIALTY CONSUMER CIRCUIT, PBGA30, MICRO SMD-30

smd UJ 99 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2015 - smd diode UJ 64 A

Abstract: SLD3237VFR smd diode UM 08 20/SPL1550-10-9-PD SLD3237VF RLT905-30G RLCD-M66H-750 smd diode UM SLD3236VF RLT6650GLI
Text: , sm, 5.6 mm 12,70 13, 99 RLT9810G, 980 nm, 10 mW, sm, 9 mm 116,60 128,47 RLT9810GS , -0980-001w-33, 980 nm +/-10 nm, 1W, mm, TO3 99 ,00 109,08 LDM-0980-002w-15, 980 nm +/-10 nm, 2W, mm, C-mount , x 1 um², TO-46 99 ,00 109,08 PLD904-10-MG, 904 nm, 10 W-pulse, 150 x 1 um², 5.6 mm 68 , -1-9-PD, 1310+/-20 nm, 1 mW, DFB, 1.25 GB/s, sm, 9 µm fiber 216,00 237, 99 SPL1310-2-9-PD, 1310+/-20 nm


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PDF RLU4116E, RLT390-50CMG, RLT395-50CMG, RLT400-50CMG, TH06-1W, ATU61938489, AT1212 AT3112 smd diode UJ 64 A SLD3237VFR smd diode UM 08 20/SPL1550-10-9-PD SLD3237VF RLT905-30G RLCD-M66H-750 smd diode UM SLD3236VF RLT6650GLI
0235

Abstract: EFD20
Text: ELECTRICAL CHARACTERISTICS: Part NO. L (uH) TMP20039CS TMP20040CS TMP20041CS TMP20042CS TMP20043CS TMP20044CS TMP20045CS TMP20046CS TMP20047CS TMP20048CS 173 76.8 22.3 9.9 12 5.3 9.65 4.3 7.63 3.4 Isat A (typ) 0.14 0.20 1.05 1.60 1.96 2.95 2.43 3.63 3.07 4.59 Irms , 65.6 98.4 65.6 98.4 65.6 98.4 65.6 Epeak ( uJ )typ 1.11 1.11 8.83 8.83 16.07 16.07 19.83 , FEATURES: SCHEMATIC SMD Style 29.0 max 22.7 ref 1 10.8 max 2.25 17.25 ref APPLICATIONS


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PDF TMP20039CS TMP20040CS TMP20041CS TMP20042CS TMP20043CS TMP20044CS TMP20045CS TMP20046CS TMP20047CS TMP20048CS 0235 EFD20
2006 - marking code ff p SMD Transistor

Abstract: 6R199P
Text: current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.9 51 15 V/ns , Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area5) T sold reflow MSL1 0.9 62 , Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D= 9.9 A, T j=25 °C V GS=10 V, I D= 9.9 A, T j=150 °C Gate resistance Rev. 2.0 RG f =1 MHz, open drain page


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PDF IPB60R199CP PG-TO263 SP000223256 6R199P marking code ff p SMD Transistor 6R199P
2009 - mosfet 6R199

Abstract: 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A
Text: /ns Parameter Symbol Conditions Values Unit 9.9 T C=25 °C A min. typ. max. - - 0.9 SMD version, device on PCB, minimal footprint - - 62 SMD , nA Drain-source on-state resistance R DS(on) V GS=10 V, I D= 9.9 A, T j=25 °C - 0.18 0.199 V GS=10 V, I D= 9.9 A, T j=150 °C - 0.49 - f =1 MHz, open drain - 2 - , 5.5 - µC - 33 - A V DD=400 V, V GS=10 V, I D= 9.9 A, R G=3.3 ns Gate


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PDF IPB60R199CPA PG-TO263-3 6R199A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 mosfet 6R199 6R199 IPB60R199CPA IPB60R099CPA IPI60R099CPA IPP60R099CPA PG-TO-263-3-2 PG-TO263 6R199A
2006 - 5r199p

Abstract: IPB50R199CP
Text: current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.9 40 15 V/ns , Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area5) reflow MSL1 0.9 62 K/W , on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D= 9.9 A, T j=25 °C V GS=10 V, I D= 9.9 A , pF V GS=0 V, V DS=0 V to 400 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D= 9.9 A, R


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PDF IPB50R199CP PG-TO263 IPB50R199CP PG-TO263 5R199P 5r199p
2007 - 6R199P

Abstract: IPB60R199CP 6R199 6R199P mosfet SP000223256 mosfet 6R199 marking code ff p SMD Transistor JESD22 MOSFET TRANSISTOR SMD MARKING CODE 7 TRANSISTOR SMD MARKING CODE c25
Text: /dt 4) dv /dt Parameter Value Symbol Conditions Symbol Conditions Unit 9.9 T C=25 °C A 51 15 V/ns Values Unit min. typ. max. - - 0.9 SMD version, device on PCB, minimal footprint - - 62 SMD version, device on PCB, 6 cm2 cooling area5 , =10 V, I D= 9.9 A, T j=25 °C - 0.18 0.199 V GS=10 V, I D= 9.9 A, T j=150 °C - 0.49 , , I D= 9.9 A, R G=3.3 pF ns Gate Charge Characteristics V DD=400 V, I D= 9.9 A, V GS=0 to


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PDF IPB60R199CP PG-TO263 SP000223256 6R199P 6R199P IPB60R199CP 6R199 6R199P mosfet SP000223256 mosfet 6R199 marking code ff p SMD Transistor JESD22 MOSFET TRANSISTOR SMD MARKING CODE 7 TRANSISTOR SMD MARKING CODE c25
2006 - 5R199P

Abstract: 5R199 5r199p data IPB50R199CP
Text: current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.9 40 15 V/ns , Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area5) reflow MSL1 0.9 62 K/W , on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D= 9.9 A, T j=25 °C V GS=10 V, I D= 9.9 A , V GS=0 V, V DS=0 V to 400 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D= 9.9 A, R G


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PDF IPB50R199CP PG-TO263 IPB50R199CP PG-TO263 5R199P 5R199P 5R199 5r199p data
2007 - 6R199P

Abstract: to-263-3 smd transistor marking DF
Text: ,pulse dv /dt T C=25 °C Value 9.9 51 15 V/ns Unit A Parameter Symbol Conditions min. Values typ , resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 , resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D= 9.9 A, T j=25 °C V GS=10 V, I D= 9.9 A, T j , ns V DD=400 V, V GS=10 V, I D= 9.9 A, R G=3.3 - Q gs Q gd Qg V plateau V DD=400 V, I D= 9.9 A, V GS=0 to 10 V - 8 11 32 5.0 43 - nC V V SD t rr Q rr I rrm V GS=0 V, I F= 9.9 A


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PDF IPB60R199CP PG-TO263 SP000223256 6R199P 6R199P to-263-3 smd transistor marking DF
2007 - Not Available

Abstract: No abstract text available
Text: Unit 9.9 A T C=25 °C Diode pulse current 2) I S,pulse 51 Reverse diode dv /dt 4 , - 0.9 SMD version, device on PCB, minimal footprint - - 62 SMD version, device , (on) V GS=10 V, I D= 9.9 A, T j=25 °C - 0.18 0.199 Ω V GS=10 V, I D= 9.9 A, T j , =400 V, V GS=10 V, I D= 9.9 A, R G=3.3 Ω pF ns Gate Charge Characteristics V DD=400 V, I D= 9.9 , t rr Reverse recovery charge Q rr Peak reverse recovery current V GS=0 V, I F= 9.9 A, T


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PDF IPB60R199CP PG-TO263 SP000223256 6R199P
2007 - 5r199p

Abstract: 5R199 IPB50R199CP JESD22 PG-TO263-3-2
Text: Conditions Unit 9.9 T C=25 °C A 40 15 V/ns Values Unit min. typ. max. - - 0.9 SMD version, device on PCB, minimal footprint - - 62 SMD version, device , (on) V GS=10 V, I D= 9.9 A, T j=25 °C - 0.18 0.199 V GS=10 V, I D= 9.9 A, T j , 400 V V DD=400 V, V GS=10 V, I D= 9.9 A, R G=16.4 ns Gate Charge Characteristics V DD=400 V, I D= 9.9 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse


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PDF IPB50R199CP PG-TO263 5R199P 5r199p 5R199 IPB50R199CP JESD22 PG-TO263-3-2
2006 - 6R199P

Abstract: 6R199 6R199P DATA SHEET IPB60R199 mosfet 6R199 smd marking code cp IPB60R199CP JESD22 SP000223256 SMD MARKING CODE 102
Text: /dt 4) dv /dt Parameter Value Symbol Conditions Symbol Conditions Unit 9.9 T C=25 °C A 51 15 V/ns Values Unit min. typ. max. - - 0.9 SMD version, device on PCB, minimal footprint - - 62 SMD version, device on PCB, 6 cm2 cooling area5 , =10 V, I D= 9.9 A, T j=25 °C - 0.18 0.199 V GS=10 V, I D= 9.9 A, T j=150 °C - 0.49 , , I D= 9.9 A, R G=3.3 pF ns Gate Charge Characteristics V DD=400 V, I D= 9.9 A, V GS=0 to


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PDF IPB60R199CP PG-TO263 SP000223256 6R199P 6R199P 6R199 6R199P DATA SHEET IPB60R199 mosfet 6R199 smd marking code cp IPB60R199CP JESD22 SP000223256 SMD MARKING CODE 102
dfig

Abstract: P6KE SMD
Text: ) ll f\ f~ ' 60 \t i K 1 UJ o UJ O UJ C D 4 ui < E T h- § O uj DUOE Q- Q LU I- U JÌ , CHARACTERISTICS 20 1 1 T j * 25*0 -. O C CC FIG. 3 - TYPICAL 2S DUTY C ^CLE UJ CO UJ a : a: UJ UJ w5 ES 85 P z Z UJ 3 0 Q X 1 C 5 1 OE C OL u_ c UJ ÜW CC UJ D uj u. £ * CS D UÜ 2 4 6 , ) .GL41 SMD 12MM Tape, T Diameter Paper Reel .GL41 SMD 12MM Tape, 13" Diameter


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PDF B125C B250C B380C 1000M_ secondsA375" dfig P6KE SMD
Not Available

Abstract: No abstract text available
Text: 94 95 96 97 98 99 100 AGO decoupling - I path analog supply voltage supply voltage for crystal , _ c m r "i l - l u / f t UJ co u in U > o c > /d A o A o A o c / /d c /d o c l O A (f\ A /\ UJ UJ _ LJ > > r ~ i l r ~ i U l - l - l co h- co ce f1 r ~ i l r ~ i r ~ i ~ i r ~ i l - l - l l - l r l - l l - l u LJ UJ LJ > LJ _ ^ t i n i n c o r - r ^ O c /d o o oA /\ / A /\ /\ > > > ,j _ l c > r < l - l 1 1 Uj C] Q CL oe cc - 1 O


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PDF TDA8044; TDA8044A SCA60 04/750/02/pp20
JTX1N3611

Abstract: smd mjj BYX10GP DF102 1N5560 jtx1n5415
Text: DERATING CURVE O lu 111 ce oc UJ §1 li s z O uj u. cc UJ ÛC S3 cc LU , CHARACTERISTICS cc oc O UJ U UJ oc a: 3 O UJ (9i Œil DO mjj o 9 I' COMPLETELY ENCAPSULATED OPAQUE BRAZED , 60Hz FIG. 4 — TYPICAL REVERSE CHARACTERISTICS z UJ cc en D O mW a: Suj uj S «O 35 ¡s z £ CO z , .Standard Horizontal Ammo Pack, Class I (Metric 52.4mm) 2 5.GL41 SMD 12MM Tape, 7" Diameter Paper Reel 2 6


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PDF BYX10GP DO-41 DO-41 MIL-S-19500 JTX1N3611 smd mjj DF102 1N5560 jtx1n5415
2010 - Not Available

Abstract: No abstract text available
Text: , lighter, and cooler. ThinPAK ThinPAK is a a new leadless SMD package for HV MOSFETs. The new package , Value 650 0.199 32 51 6.1 200 Package PG-VSON-4 V Unit nC A µJ A/µs bottom view drain pin 4 , 260 °C reflow MSL 3 RthJA SMD version, device on PCB, 6cm2 cooling area1) Tsold - - , , ID= 9.9 A, Tj=25 °C VGS=10 V, ID= 9.9 A, Tj=150 °C f=1 MHz, open drain eli 0.18 0.47 2 Min. Typ , , ID= 9.9 A, RG= 3.3 Co(er) Co(tr) td(on) tr td(off) 180 10 5 50 - - ns ry - 5


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PDF IPL60R199CP 150mm²
2012 - 6R199

Abstract: Diode SMD SJ 99
Text: compact, lighter, and cooler. ThinPAK bottom view ThinPAK is a a new leadless SMD package for HV , A IFX Design tools Eoss @ 400V 6.1 µJ Body diode di/dt 200 A/µs Type , 260 Note / Test Condition °C/W SMD version, device on PCB, 6cm2 cooling area1) ° C , © VGS=10 V, ID= 9.9 A, Tj=25 °C - 0.47 - - 2 - Gate-source leakage current IGSS , , VGS=0 V, Tj=25 °C µA VDS=600 V, VGS=0 V, Tj=150 °C VGS=10 V, ID= 9.9 A, Tj=150 °C Î


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PDF IPL60R199CP 150mm 6R199 Diode SMD SJ 99
2010 - 6R199P mosfet

Abstract: IPL60R199CP mosfet 6R199 6R199 IPL60R199 6r199p TRANSISTOR SMD MARKING g1 Diode SMD SJ 99 ipl60r
Text: , lighter, and cooler. ThinPAK ThinPAK is a a new leadless SMD package for HV MOSFETs. The new package , Parameters Value 650 0.199 32 51 6.1 200 Package PG-VSON-4 Unit V nC A µJ A/µs Marking 6R199P Related Links , Thermal characteristics Thermal characteristics Symbol Min. Values Typ. Max. 0.9 45 °C/W SMD version , =0.66 mA VDS=600 V, VGS=0 V, Tj=25 °C VDS=600 V, VGS=0 V, Tj=150 °C VGS=20 V, VDS=0 V VGS=10 V, ID= 9.9 A, Tj=25 °C VGS=10 V, ID= 9.9 A, Tj=150 °C f=1 MHz, open drain VGS(th) IDSS IGSS -


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PDF IPL60R199CP 150mm² 6R199P mosfet IPL60R199CP mosfet 6R199 6R199 IPL60R199 6r199p TRANSISTOR SMD MARKING g1 Diode SMD SJ 99 ipl60r
2010 - 6R199P

Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199
Text: leadless SMD package for HV MOSFETs. The new package has a very small footprint of only 64mm² (vs. 150mm , 32 nC ID,pulse 51 A Eoss @ 400V 6.1 µJ Body diode d i/dt 200 Related , 260 Note / Test Condition °C/W SMD version, device on PCB, 6cm2 cooling area1) °C reflow , RG - - 100 nA VGS=20 V, VDS=0 V - 0.18 0.199 VGS=10 V, ID= 9.9 A, Tj , VGS=10 V, ID= 9.9 A, Tj=150 °C f=1 MHz, open drain Dynamic characteristics Symbol in


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PDF IPL60R199CP 150mm² 6R199P mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199
2010 - 6R199P DATA SHEET

Abstract: ipl60r199cp 6R199P 20/Diode SMD SJ 99 JESD22 transistor smd marking Ag
Text: , lighter, and cooler. ThinPAK ThinPAK is a a new leadless SMD package for HV MOSFETs. The new package , ThinPAK Webpage ID,pulse 51 A IFX Design tools Eoss @ 400V 6.1 µJ Body diode di/dt , - - 260 Note / Test Condition °C/W SMD version, device on PCB, 6cm2 cooling area1 , VGS=10 V, ID= 9.9 A, Tj=25 °C - 0.47 - - 2 - Gate-source leakage current IGSS , , VGS=0 V, Tj=25 °C µA VDS=600 V, VGS=0 V, Tj=150 °C VGS=10 V, ID= 9.9 A, Tj=150 °C f


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PDF IPL60R199CP 150mm² 6R199P DATA SHEET ipl60r199cp 6R199P 20/Diode SMD SJ 99 JESD22 transistor smd marking Ag
2012 - 6R199P mosfet

Abstract: mosfet 6R199 IPL60R199CP Benchmark MOSFETs
Text: , lighter, and cooler. ThinPAK ThinPAK is a a new leadless SMD package for HV MOSFETs. The new package , Parameter Key Performance Parameters Value 650 0.199 32 51 6.1 200 Package PG-VSON-4 Unit V nC A µJ A/µs , . 0.9 45 °C/W SMD version, device on PCB, 6cm2 cooling area1) °C reflow MSL 3 Unit Note / Test Condition , , VDS=0 V VGS=10 V, ID= 9.9 A, Tj=25 °C VGS=10 V, ID= 9.9 A, Tj=150 °C f=1 MHz, open drain VGS(th) IDSS , , VGS=0 V VDS=0.480V VDD=400 V, VGS=13 V, ID= 9.9 A, RG= 3.3 (see table 16) Fall time tf 5 1) Co(er


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PDF IPL60R199CP 150mm² 6R199P mosfet mosfet 6R199 IPL60R199CP Benchmark MOSFETs
2009 - DIODE ED 99

Abstract: diode smd ED 35 transistor smd marking ND mosfet 6R199 IPB60R199CPA smd transistor ds 65 me smd transistor SMD TRANSISTOR MARKING ME diode smd ed 06 smd diode EC
Text: ) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.9 51 15 V/ns Unit A ed nd me ns om sig ec de tr w e no rn fo Symbol Conditions Values typ. min. R thJC R thJA SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area4) MSL 1 35 T sold V (BR)DSS V GS=0 V, I D=250 µA V , =10 V, I D= 9.9 A, T j=25 °C V GS=10 V, I D= 9.9 A, T j=150 °C I GSS R DS(on) 0.18 0.49 2 RG f =1 MHz , e no rn fo V GS=0 V, V DS=0 V to 480 V 180 10 5 t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D= 9.9


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PDF IPB60R199CPA 6R199A PG-TO263-3 PG-TO263-3 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 DIODE ED 99 diode smd ED 35 transistor smd marking ND mosfet 6R199 IPB60R199CPA smd transistor ds 65 me smd transistor SMD TRANSISTOR MARKING ME diode smd ed 06 smd diode EC
2008 - Not Available

Abstract: No abstract text available
Text: THE TALEMA GROUP • Magnetic Components for ISDN / xDSL / LAN Data Communications SECTION 6 SMD and DIL • Common Mode Interface Chokes - DIL and SMD TALEMA PROFILE Founded in 1975, The TALEMA , 12mH 4 Max. Board Area W x L x Ht (mm) Data Sheet Page Nr. "J" Lead SMD 4 x 1.27 , 4.7mH 4 CSJ-2-XXX 11μH - 47mH 11μH - 12mH 3 CSJ-4-XXX 11μH - 12mH "J" Lead SMD , 2 CQJ-XXX 1.0mH - 90mH 4 CDF-XXX CDV-XXX CQF-XXX CKV-XXX Data Line "J" Lead SMD


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PDF
SP 8666 B

Abstract: No abstract text available
Text: THE TALEMA GROUP • Magnetic Components for ISDN / xDSL / LAN Data Communications SECTION 6 SMD and DIL • Common Mode Interface Chokes - DIL and SMD TALEMA PROFILE Founded in 1975, The TALEMA , . Board Area W x L x Ht (mm) Data Sheet Page Nr. "J" Lead SMD 4 x 1.27 5.0 x 3.3 x 3.3 , Lead SMD 4 CCJ-2-XXX 26μH - 70mH 2 CCJ-4-XXX 26μH - 58mH 4 CDJ-XXX 1.0mH - , - THT 4 x 2.54/5.08 7.4 x 15.2 x 17.6 "J" Lead SMD 40 x 1.27 16.2 x 28.0 x 6.0 21


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PDF
0402 land pattern

Abstract: SDT0402T-6R8M-N Chilisin SSL0402 SDT0804T-151M-N SDT0402T-221M-N
Text: ) 120 Energe Storage ( uj ) 1 0.9 SMD Shielded Power Inductors ­ SDT Series Electrical , W (J) 12 80 W ( uJ ) 120 SMD Shielded Power Inductors - SDT Series Packaging , SMD Shielded Power Inductors - SDT Series SDT Series Chilisin's SDT Series represents the , 2.54 7.62 13.21 7.37 2.79 2.92 SMD Shielded Power Inductors ­ SDT Series Electrical , 700 Energy Storage ( uj ) inductance(uH) 800 1.2 80 1.8 1.4 100 900 0 0


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PDF SSL0402 178mm 330mm 0402 land pattern SDT0402T-6R8M-N Chilisin SDT0804T-151M-N SDT0402T-221M-N
214A68

Abstract: ig137 efr135 RGP10E IN5802 panasert 3L41 PKQ14 k 524 ir BYX10GP
Text: CURVE ir« o lu 111 ce oc UJ §1 li s z O uj U- cc UJ OC S3 ir LU , CHARACTERISTICS cc œ 3 o UJ M (E 3 CO Q « guj See 1% S? to 3 O Z g z , REVERSE CHARACTERISTICS Z uj CE CE 3 O a: te Suj >è uj s SMD 12MM Tape, 7" Diameter Paper Reel 2 6.GL41 SMD 12MM Tape, 13" Diameter Paper Reel 2 7. SMD , 16 MM Tape, T Diameter Reel 2 8


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PDF 0QD4033 BYX10GP DO-41 DO-41 MIL-S-19500 214A68 ig137 efr135 RGP10E IN5802 panasert 3L41 PKQ14 k 524 ir BYX10GP
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