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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

smd TRANSISTOR 27e Datasheets Context Search

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C1685

Abstract: C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1681 C1636 MCT66 TRANSISTOR C1685
Text: s ) 3A OUTPUT TRANSISTOR (each channel) Power dissipation @ 25°C a m bient 150 mW Derate , 30 mA 3 « § IO S 3 1-215 o> .dUALTTY TECHNOLOGI ES CORP 0 27E D , CONDITION V 10 . OUTPUT TRANSISTOR (lF= 0 ) BVceq 30 85 Breakdown voltage, emitter to , TRANSISTOR Non-saturated rise time, fall time (Note 3) 2.4 fi s l0= 2 mA, Vce=10 V, RL= io o n , (3UALITY TECH NOL OGIES CORP QUALITY TECHNOLOGIES 27E D ■■TMLbñSl O O G B S ? 1 2 1 !


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PDF 74bbflSl 0GQ3577 MCT62 MCT61 MCT66 16-pin C2091 MCT9001 C1685 C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1681 C1636 MCT66 TRANSISTOR C1685
smd TRANSISTOR 27e

Abstract: TRANSISTOR SMD a38 smd 27E
Text: dUALITY. TE CHN OLOGIES CORP 27E D 74bt.flSl QQ03M37 4 VDE APPROVED PHOTOTRANSISTOR , 25°C ambient . . . Derate linearly from 25°C . .1.8 mW/“C OUTPUT TRANSISTOR , 1-75 . . -J dUALITY TECHNOLOGIES CORP L_. 27E D QUALITY TECHNOLOGIES ■74bbfiSl , 65 Reverse leakage current TEST CONDITIONS 10 V „ = 3 .0 V OUTPUT TRANSISTOR , 0003440 4 ■27E D ' VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS T -4 1 -8 3 ELECTRICAL


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PDF QQ03M37 CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z CNY17 CNY17F1: CNY17F2: CNY17F3: E50151 ii54i smd TRANSISTOR 27e TRANSISTOR SMD a38 smd 27E
transistor 41 74t

Abstract: smd TRANSISTOR 27e
Text: linearly from 25'C .1,8 mW/°C OUTPUT TRANSISTOR Power dissipation at 25 , N E £ 1 .3 M Cf [ IO > N ! M ÖUALI-TY T E C H N O L O G I E S CORP 27E D SU , 65 10 OUTPUT TRANSISTOR Breakdown voltage Collector to emitter BVceo 30 45 V lc , QUALITY TECHNOLOGIES e 27E D ■74fabfiSl 0003553 f l PHOTOTRANSISTOR OPTOCOUPLERS in , /1Z HCT2202/2Z í 1-162 (3UALITY TECHNOL OGIES CORP 27E D 74bbû51 QDD337T S â


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PDF 74bhfl51 T-41-83 MCT2200/0Z MCT2201/1Z MCT2202/2Z MCT2200, MCT2201 MCT2202 MCT2200â MCT2201â transistor 41 74t smd TRANSISTOR 27e
mca2255

Abstract: smd TRANSISTOR code AJ
Text: DUALITY'TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D ■TMbtaSl 0003435 VDE , transistor . The device is supplied in a standard plastic six-pin dual-in-line package. ' t 8.86 6.36 , monitor for battery powered supplies. DU A L I T Y T E C H N O L O G I E S CORP 27E D QUALITY , o u p l e r s - T - y /- 8 r ■(3UALITY TECHNOLOGIES CORP 27E D , -Pin 1-17 S § 5 2 3 i x m CJUÄLITY TECHNOLO GIE S CORP 27E D QUALITY TECHNOLOGIES â


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PDF MCA2230Z MCA2231Z MCA2255Z MCA2230, MCA2231 MCA2255 MCA2230 MCA2231, MCT9001 smd TRANSISTOR code AJ
transistor c1684

Abstract: No abstract text available
Text: linearly from 25°C . .1.2 mW/°C OUTPUT TRANSISTOR Power dissipation @ 25°C Derate dissipation @ from 25°C . . . . . . 2.67 mW/*C i (3UALITY" TECHNOLOGIES CORP 27E I , Cj Reverse leakage current Ir 0.35 10 OUTPUT TRANSISTOR DC forward current gain , -TECHNOLOGIES CORP 27E D ' ■QUALITY TECHNOLOGIES 74fc,fc>fl51 000354(3 f ■l , Waveforms (3UALITY TECHNOLOGIES CORP 27E D 74bbû51 QDD337T S ■SURFACE MOUNT OPTIONS


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PDF MCT272 MCT272 MCT9001 transistor c1684
Not Available

Abstract: No abstract text available
Text: dJUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D ■74tibfiSl Q003541 T , °C . .1.2.mW/°C OUTPUT TRANSISTOR Power dissipation @ 25'C . Derate linearly , .0 V 65 . 0.35 OUTPUT TRANSISTOR „ DC forward current gain Breakdown voltage , '~TECHNOLOGIES CÔRP 27E D QUALITY TECHNOLOGIES ■TMhbflSl 0 0 0 3 5 4 4 5 ■PHOTOTRANSISTOR , . Switching Time Test Circuit Fig. 11. Switching Time Waveforms (3UALITY TECHNOL OGIES CORP 27E D


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PDF 74tibfiSl Q003541 MCT274 MCT274 C2090 C2079 MCT9001
a36 smd transistor

Abstract: transistor smd 4z
Text: ÖUALITY'TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D 74fe.bfl51 0003431 3 VDE , linearly from 25°C . . 1.8 mW/°C OUTPUT TRANSISTOR Power dissipation @ 25â , = 1 MHz 65 .35 Ih pF 10 VF= 1 V, f= 1 MHz M V „= 3 .0 V OUTPUT TRANSISTOR , - (3UALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 74t.fc.flSl 0003434 “ J 27E ' D , 27E D 74bbû51 QDD337T S ■SURFACE MOUNT OPTIONS QUALITY TECHNOLOGIES T"-?0-30 SURFACE


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PDF bfl51 CNY17-1/1Z Y17-3/3Z Y17-2/2Z Y17-4/4Z CNY17 CNY17-1: CNY17-2: CNY17-3: CNY17-4: a36 smd transistor transistor smd 4z
S7E SMD TRANSISTOR

Abstract: No abstract text available
Text: DUALITY -TECHNOLOGIES CORP 27E D Bl QUALITY TECHNOLOGIES ■74bfciä51 Q0G3S4S 7 , linearly from 25°C . .1.2 mW/’C OUTPUT TRANSISTOR Power dissipation @ 25 , /iA V r= 3 .0 V Ih 0.35 hre 170 10 Ir= 1 0 //A OUTPUT TRANSISTOR DC forward , – DUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E J ■' ■> 74ttflSl 0003547 0 , TECHNOLOGIES CORP a 27E D 7 4 b b û 5 1 QDD337T S ■SURFACE MOUNT OPTIONS QUALITY


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PDF 74bfcià MCT275 MCT275 MCT9001 S7E SMD TRANSISTOR
smd diode UJ 64 A

Abstract: smd TRANSISTOR 27e
Text: dUA LIT Ÿ TE CH NOL OGIE S CÔRP QUALITY TECHNOLOGIES 27E D 74bt.aSl 00034^5 7 VDE , (3UALITY TECHNOL OGIES CORP 27E D 7 4b ti fl S l QDD337T S ■SURFACE MOUNT OPTIONS QUALITY , CJUÄLITY TECHNOLO GIE S CORP 27E D QUALITY TECHNOLOGIES ■74btiaSl Q0033fiG 1 ■SURFACE MOUNT OPTIONS 7 ~ 9 û~Z Ç > SMD OPTION 100 PACKAGE DIMENSIONS FEATURES O I8.64 8.38 A , SMD version of an optocoupler just add -100 to the part number, for example: 740L6000-100 Optologic


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PDF MCP3020/0Z* MCP3021/1Z MCP3022/2Z MCP3020, MCP3021 MCP3022 MCT9001 smd diode UJ 64 A smd TRANSISTOR 27e
transistor C2075

Abstract: g10 smd transistor SMD Transistor 1c
Text: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 0 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a , €˜C . ac - » OUTPUT TRANSISTOR Power dissipation @ 25°C . . 150 mW Derate , Vn= 3 .0 V - 10 OUTPUT TRANSISTOR Breakdown voltage Collector to emitter BVcso 30 , TRANSISTOR OUTPUT OPTOCOUPLER T -4 1 -8 3 ELECTRICAL CHARACTERISTIC CURVES {Fa~ 25'C Unless Otherwise


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PDF 74bbasi H11A1 H11A1Z H11A1 E50151 MCT9001 transistor C2075 g10 smd transistor SMD Transistor 1c
Not Available

Abstract: No abstract text available
Text: OUTPUT TRANSISTOR Power dissipation @ 25°C . . 200 mW Derate linearly from 25’C , TRANSISTOR DC forward current gain TEST CONDITIONS -1 .8 3.0 65 Reverse leakage current , I T Y -TECHN OLO GIE S CORP 27E D r a QUALITY I » TECHNOLOGIES ■74bfcjfl51 O D O , Test Circuit C1294 Fig. 11, Switching Time Waveforms (3UALITY TECHNOL OGIES CORP 27E D , 200 / 8-Pin § 5 2 3 i x 1-17 m CJUÄLITY TECHNOLO GIE S CORP 27E D QUALITY


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PDF MCT276 MCT276 m-78T C2079 MCT9001
Not Available

Abstract: No abstract text available
Text: °C . . 3.5 mWro OUTPUT TRANSISTOR Power dissipation at 25< . . , = 1 MHz V „= 3 .0 V 10 OUTPUT TRANSISTOR Breakdown voltage Collector to emitter H11D1 , MHz (3UALXTY T E C H N O L O G I E S CO RP 74btaSl 0003457 27E D HIGH-VOLTAGE VDE , OGIES CORP 27E D 7 4 b b û 5 1 QDD337T S ■SURFACE MOUNT OPTIONS QUALITY TECHNOLOGIES , 1-17 m CJUÄLITY T E C H N O L O G I E S CORP 27E D QUALITY TECHNOLOGIES â


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PDF Q0G34SS H11D1/1Z H11D2/2Z H11D3/3Z H11DX H11D1-D2, H11D3, MCT9001
smd 27E

Abstract: MCP3041 smd TRANSISTOR 27e c2075 transistor C2078 MCP3040 MOC3041 optocoupler transistor C2075 S7E SMD TRANSISTOR optocoupler moc3031
Text: DUALITY- TE CHNOLOG IES CÔRP 27E D 74bbä51 00034=1=1 4 VDE APPROVED ZERO-CROSSING TRIACS , TECHNOLOGIES CORP 27E D 74bbû51 QDD337T S SURFACE MOUNT OPTIONS a QUALITY TECHNOLOGIES T , CJUÄLITY TECHNOLOGIES CORP 27E D 74btiaSl Q0033fiG 1 SURFACE MOUNT OPTIONS 7~9û~ZÇ> QUALITY TECHNOLOGIES SMD OPTION 100 PACKAGE DIMENSIONS FEATURES Surface mountable Lead co-planarity with , quantity restrictions. To order these SMD version of an optocoupler just add -100 to the part number, for


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PDF MCP3030* MCP3040/0Z* 15mAMCP3031 MCP3041/1Z MCP3032 MCP3042/2Z MCP3031 MCP303Z smd 27E MCP3041 smd TRANSISTOR 27e c2075 transistor C2078 MCP3040 MOC3041 optocoupler transistor C2075 S7E SMD TRANSISTOR optocoupler moc3031
SMD Transistor AFR

Abstract: No abstract text available
Text: Derate linearly from 25°C . 0.8 mW/'C OUTPUT TRANSISTOR Power dissipation @ 25 , V, f= 1 MHz M V r= 3 .0 V .65 Ir 0.35 hre 10 420 OUTPUT TRANSISTOR DC , Fig. 11. Switching Time Waveforms (3UALITY TECHNOLOGIES CORP 27E D 74bbû51 S â , 200 / 8-Pin § 5 2 3 i x 1-17 m CJUÄLITY TECHNOLOGIES CORP 27E D QUALITY TECHNOLOGIES ■74btiaSl 0 0 0 3 3 0 0 1 ■SURFACE MOUNT OPTIONS 7~9û~ZÇ> SMD OPTION 100


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PDF 74bbfl51 T-41-83 MCT277 MCT277 C2090 15pseconds MCT9001 SMD Transistor AFR
1997 - flyback transformer philips TV EHT AT2097

Abstract: TDA8447 TU305B2 AT2097 TRANSISTOR D405 flyback transformer philips AT2097 BC548 TRANSISTOR SMD IC2 7812 D409 transistor UC3843 SMD
Text: deflection transistor BU2532AL · DC controlled linearity corrector PE4025/01 · EHT transformer , transformer and a high-speed switching line output transistor BU2532AL. To obtain optimum scan performance , resulting in a burst-mode operation of the SMPS. Transistor T10 and T11 act as comparator to control the , transistor . Diode D401 and resistor R403 are added for protection. 3.4.2 Line driver and output stage , stage (typically 1.8 W) capable of driving the line output transistor over a wide frequency range. The


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PDF CCM420 AN97032 CCM420 P83Cx81. P83Cx80 P83Cx81 P83Cx81) flyback transformer philips TV EHT AT2097 TDA8447 TU305B2 AT2097 TRANSISTOR D405 flyback transformer philips AT2097 BC548 TRANSISTOR SMD IC2 7812 D409 transistor UC3843 SMD
npn smd 2a

Abstract: smd 27E S0T223 T79 SMD S0T-223 IEC134 BDS955 BDS953 BDS951 BDS949
Text: Philips Components Datasheet statu* Product specification date of issue April 1991 BDS949/951/953/9S5 NPN silicon epitaxial base power transistors DESCRIPTION NPN silicon epitaxial base transistors in a miniature SMD envelope (S0T223) intended for general purpose and switching applications. PNP complements are BDS950/952/954/956. PINNING-SOT223 PIN DESCRIPTION 1 base 2 collector 3 emitter 4 , ) Fig.6 SOT223. October 1990 481 ^53^31 GD34b52 27E


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PDF BDS949/951/953/9S5 S0T223) BDS950/952/954/956. PINNING-SOT223 BDS949 BDS951 BDS953 BDS955 npn smd 2a smd 27E S0T223 T79 SMD S0T-223 IEC134
smd 27E

Abstract: tlc271 smd S7E SMD TRANSISTOR Diamond SA smd resistors mechanical dimension TLC271 OPC8320 OPC600L OPC216 Optek Technology
Text: This Material Copyrighted By Its Respective Manufacturer OPTEK TECHNOLOGY INC 27E D , surface for chip-on-board construction. It is also compatible with SMD , leaded and thick film resistor , 0.210 a.ees -· » I 0.079 I « * - im r SIDE HYBRID ASSEMBLY QUAD PHOTO TRANSISTOR


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PDF OPC8320 smd 27E tlc271 smd S7E SMD TRANSISTOR Diamond SA smd resistors mechanical dimension TLC271 OPC600L OPC216 Optek Technology
2010 - Not Available

Abstract: No abstract text available
Text: resistor 0.07E SMD - Resistor SMD - Resistor SMD - Resistor SMD - Resistor SMD - Resistor SMD - Resistor SMD - Resistor SMD - Resistor SMD - Resistor SMD - Resistor 1R, 9A 14mm/ 300V AC 0.070, 3 W 249k , % 6.8k, 1/8W, 1% 2.7E ,1/8W, 1% 100,1/8W, 1% 40 41 42 43 44 45 46 47 48 49 50 51 52 53 , Through Hole Custom SO-8 SMD SOD-123 Custom Custom PR01000104703JR500 019-4119-00 IR1155


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PDF PD97152 IRAC1155-300W IR1155 IEC61000-3-2 115230VAC/300W) 115-230VAC/300W) 100kHz 85-264VAC
2010 - IR1155

Abstract: IR1155S
Text: resistor 0.07E SMD - Resistor SMD - Resistor SMD - Resistor SMD - Resistor SMD - Resistor SMD - Resistor SMD - Resistor SMD - Resistor SMD - Resistor SMD - Resistor 1R, 9A 14mm/ 300V AC 0.070, 3 W 249k , % 6.8k, 1/8W, 1% 2.7E ,1/8W, 1% 100,1/8W, 1% 40 41 42 43 44 45 46 47 48 49 50 51 52 53 , Through Hole Custom SO-8 SMD SOD-123 Custom Custom PR01000104703JR500 019-4119-00 IR1155


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PDF PD97152 IRAC1155-300W IR1155 IEC61000-3-2 115230VAC/300W) 115-230VAC/300W) 100kHz 85-264VAC IR1155 IR1155S
qml-38535

Abstract: CDFP2-F10 GDFP1-F10
Text: . DATE SIGNED (YYMMDD) 97-01-27 DD Form 1695, APR 92 Previous editions are obsolete. ^004706 QQE75ET 27e , flb3 ■JUL 94 HANDBOOKS MILITARY MIL-HDBK-103 - List of Standard Microcircuit Drawings ( SMD 's). , -103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the , will replace device class M devices. 6.2 Configuration control of SMD 's. All proposed changes to existing SMD 's will be coordinated with the users of record for the individual documents. This coordination


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PDF QML-38535. QML-38535 MIL-HDBK-103. MIL-HDBK-103 T00H70Ã 002753e! CDFP2-F10 GDFP1-F10
TRANSISTOR SMD 1 KW

Abstract: transistor smd R11 transistor SOT23 J5 MBRS540LT3G EEEVFK1H221P SMD Transistor nc smd transistor 24 sot23 transistor SOT23 J6 SMD transistor r12 TRANSISTOR SMD 85 330
Text: Power MOSFET, P-channel NTF2955T1G ON Semiconductor SOT223 SMD General Purpose Transistor , General Purpose Transistor MMBT3904LT1G ON Semiconductor SOT23 SMD 1 R1 100 mW, 0.5 W , MOSFET, P-channel NTF2955T1G ON Semiconductor SOT223 SMD General Purpose Transistor , General Purpose Transistor MMBT3904LT1G ON Semiconductor SOT23 SMD 1 R1 100 mW, 0.5 W , MOSFET, P-channel NTF2955T1G ON Semiconductor SOT223 SMD General Purpose Transistor


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PDF NCP30653ABCKGEVB, NCP3065SOBCKGEVB, NCP3065SOBSTGEVB NCP3065/NCV3065 EVBUM2155/D TRANSISTOR SMD 1 KW transistor smd R11 transistor SOT23 J5 MBRS540LT3G EEEVFK1H221P SMD Transistor nc smd transistor 24 sot23 transistor SOT23 J6 SMD transistor r12 TRANSISTOR SMD 85 330
moc3041 dimmer

Abstract: Application silicon bilateral switch light Dimmer tlp521 equivalent QTC 4N35 moc3023 dimmer Optocouplers QTC MOC3011 optocoupler smd transistor b35 moc3042 KAQY212eh
Text: Lead Times · Unbeatable Quality · Technical Support 3 4 Pin DIL & SMD Optocouplers Transistor , potentials and impedances 4 Pin DIL & SMD Optocouplers (Part Numbers) Transistor Output ISP321-1 ISP521 , 6 Pin DIL & SMD Optocouplers Transistor Output AC Input Darlington Output Description , systems of different potentials and impedances 6 Pin DIL & SMD Optocouplers (Part Numbers) Transistor , DIL & SMD Optocouplers Part Numbers Transistor Output ISP321-2 ISP521-2 ISP621-2 ISP624-2 ISP827


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PDF Unbeata140 PAA150 LAA100 LAA110 LAA126 LAA127 LAA120 LAA125 LCB110 LCB111 moc3041 dimmer Application silicon bilateral switch light Dimmer tlp521 equivalent QTC 4N35 moc3023 dimmer Optocouplers QTC MOC3011 optocoupler smd transistor b35 moc3042 KAQY212eh
2008 - SMD Transistor dj rm

Abstract: complementary bipolar transistor driver schematic Z-Power P7 TRANSISTOR SMD mosfet driver cree mc-e driver TRANSISTOR SMD mosfet power 882 smd ZXLD1320 SMD Transistor dj diode smd ed 49
Text: NIC Coilcraft NIC Murata NIC Murata Murata NCST12FR100FTRF NCST12FR100FTRF SMD 1206 SMD 0805 / 0603 SMD 0805 / 0603 SMD 0805 / 0603 SMD 0805 / 0603 NIC NIC generic generic generic , Barrier Rectifier 10uH 4.1A 10nF 25V X7R SMD 0603 47nF 25V X7R SMD 0603 4.7uF 50V X7R SMD 1206 , current feedback controller to control the MOSFET power switch through a ZXTC2045 gate drive transistor , gate drive circuitry. Q2 is a complementary BJT pair with the NPN transistor connected as a blocking


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PDF ZXLD1320 curre41 SMD Transistor dj rm complementary bipolar transistor driver schematic Z-Power P7 TRANSISTOR SMD mosfet driver cree mc-e driver TRANSISTOR SMD mosfet power 882 smd SMD Transistor dj diode smd ed 49
2009 - capacitor 10uF/63V

Abstract: capacitor 220uF/63V J152 pF CAPACITOR 100v 100 pf, ATC Chip Capacitor capacitor 1206 63V ID Innovations 10uf 63v capacitor Coaxicom resistor smd 1206 102
Text: Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF , MOSFET power transistor designed for pulsed applications at L-Band from 960MHz to 1215MHz. The high , Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS , L-Band Avionics Pulsed PowerHigh Ruggedness HVV0912-150 High Voltage, Transistor 960-1215 MHz, Pulsed Power Transistor Pulsed Power Transistor 10% Avionics L-Band Avionics10µs Pulse,L-BandDuty Cycle For


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PDF HVV0912-150 429-HVVi EG-01-DS11B capacitor 10uF/63V capacitor 220uF/63V J152 pF CAPACITOR 100v 100 pf, ATC Chip Capacitor capacitor 1206 63V ID Innovations 10uf 63v capacitor Coaxicom resistor smd 1206 102
2001 - saw Colpitts circuit design

Abstract: smd transistor b2 transistor AE RF footprint qcc8c working of colpitts oscillator smd transistor footprint smd transistor AE AG SMD TRANSISTOR TRANSISTOR SMD L3 rf transistor smd pages
Text: Application Note SAW-Components How to switch over from any 4 pin SMD SAW resonator to the new EPCOS SAW resonators R8xx in QCC4A SMD package (3.5mm x 5mm) App. Note #23 Author: Updated , over from 4-pin SM-2 SAWR to EPCOS QCC4A Tips and tricks to switch over easily from any 4 pin SMD SAW resonator to the new EPCOS SAW resonators in QCC4A SMD package (3.5mm x 5mm, 4 pins). General , gained profound knowhow in ceramic (metal lid) SMD package technology. For more than a decade, EPCOS SMD


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PDF D-81617 saw Colpitts circuit design smd transistor b2 transistor AE RF footprint qcc8c working of colpitts oscillator smd transistor footprint smd transistor AE AG SMD TRANSISTOR TRANSISTOR SMD L3 rf transistor smd pages
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