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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
BD70522GUL BD70522GUL ECAD Model ROHM Semiconductor Ultra Low Iq Buck Converter For Low Power Applications
BD9P155MUF-C BD9P155MUF-C ECAD Model ROHM Semiconductor 3.5V to 40V Input, 5.5V Output, 1A Single 2.2MHz Buck DC/DC Converter For Automotive, VQFN20FV4040 Package
BD9P255MUF-C BD9P255MUF-C ECAD Model ROHM Semiconductor 3.5V to 40V Input, 5.5V Output, 2A Single 2.2MHz Buck DC/DC Converter For Automotive, VQFN20FV4040 Package
BD9P135MUF-C BD9P135MUF-C ECAD Model ROHM Semiconductor 3.5V to 40V Input, 3.3V Output, 1A Single 2.2MHz Buck DC/DC Converter For Automotive, VQFN20FV4040 Package
BD9P135EFV-C BD9P135EFV-C ECAD Model ROHM Semiconductor 3.5V to 40V Input, 3.3V Output, 1A Single 2.2MHz Buck DC/DC Converter For Automotive, HTSSOP-B20 Package
BD9P255EFV-C BD9P255EFV-C ECAD Model ROHM Semiconductor 3.5V to 40V Input, 5.5V Output, 2A Single 2.2MHz Buck DC/DC Converter For Automotive, HTSSOP-B20 Package

silicon di for microwave diode mixer Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
DME2050-222

Abstract: No abstract text available
Text: accounts for the predominant use of surface barrier diodes in microwave mixers, where the diode must , , the mixer diode should accomplish this conversion with a minimum of LO power and no need for an , . Schottky Diode Circuits Mixer Circuits There are many different circuits utilized for frequency , Curves for Silicon Schottky Diodes with High, Medium, Low and “ZBD” Barrier Heights Diffusion , voltage-current relationship for a barrier diode is described by the law of the junction equation. The


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PDF APN1014: DME2050-222
DMJ4747

Abstract: DMJ4708 DMJ3102-000 DMF-5845 DMJ3086 DMF6554-000 DMF2190-000 DMJ4317-000 dme3013-000
Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes Features Ideal for MIC Low 1/f Noise , Precautions for Schottky Barrier and Point Contact Mixer and Detector Diodes Bonding Methods: Diode Chips , Drive X-Band Mixer Diode Admittance Characteristics 2-19 Silicon Beam-Lead and Chip Schottky , available. * Call factory for part number. 2-24 Silicon Beam-Lead and Chip Schottky Barrier Mixer , Notes: * Call factory for part number. 2-28 Silicon Beam-Lead and Chip Schottky Barrier Mixer


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PDF DMB2853-000 DMB2854-000 DMB2855-000 DMB2856-000 DMB6780-000 DMB6782-000 DMB3000-000 DMB3001-000 DMB6781-000 DMB3003-000 DMJ4747 DMJ4708 DMJ3102-000 DMF-5845 DMJ3086 DMF6554-000 DMF2190-000 DMJ4317-000 dme3013-000
S11 SCHOTTKY diode

Abstract: S11 zener diode phase shifter using lumped elements Microwave detector diodes history of varactor diode schottky transistor spice
Text: with the active regions of the device. A Silicon diode has either a pn-junction or a Schottky , diode rectifies an RF signal. A Silicon transistor has two active junctions, each of which electrically is a diode junction. One junction is forward biased and the other, reverse biased, for normal , the TEM fields of a coaxial line. If the design is for a coaxial detector or mixer or phase shifter , in the coax line by the diode package. On the other hand, mounting a packaged Silicon PIN diodes


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1N23 diode

Abstract: SINGLE ENDED MIXER 1N23 ALPHA 1N23 Diode Holder surface mount zero-bias detector diode silicon di for microwave diode mixer x-band motion detector metal diode Silicon Point Contact Mixer Diodes zero bias diode
Text: correct noise figure for the single-diode mixer alone. CRYSTAL CURRENT The diode produces DC current as a , required as for a single diode mixer . The VSWR can be much lower, and the ZIF depends on how the signals , commonly used in mixer and detector circuits. In a junction diode the rectifying junction is formed between , ( silicon or gallium arsenide). The barrier of the point contact diode is formed by bringing the pointed end , result in high quality microwave mixer diodes with excellent noise figures. The Schottky barrier type is


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1986 - diode hp 2835 schottky

Abstract: hp 2800 diode mixer HSCH-3486 HSCH-5310 2.2 GHz local oscillator 5082-2817 HSCH3486 power semiconductor 1973 Hewlett-Packard microwave pin diode microwave mixer diode
Text: ideal diode and less than 1.1 for a silicon Schottky diode . Variations in n are not important for n , The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky , this case the mixer may be called an upconverter. For a given local oscillator frequency, the , the effect of the amplifier following the mixer . Diode manufacturers include the effect of a 1.5 dB , amplifier in the mixer noise definition. In this paper diode efficiency will be measured by conversion


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1996 - Not Available

Abstract: No abstract text available
Text: ) Suitable for Digital or Analog Microwave Radio Applications Mounts Directly to Existing Waveguide , as the downconverter in the receive end of a point-to-point microwave radio system. A Gunn diode and , consists of a hermetically packaged silicon Schottky diode matched to an open waveguide assembly which , LO to RF Isolation Recommended DC Return ( Mixer Diode )4 Waveguide Size/Flange IF Connector ( Mixer , Local Oscillator/ Mixer Assembly 14.23 - 15.50 GHz Features q q MA87923 V3.00 6.8 µF D.C


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PDF MA87923 UG-419/U WR-62 WR-62,
1996 - GaAs varactor diode

Abstract: high power waveguide isolators AM tuning capacitor
Text: Frequency Control (AFC) Suitable for Digital or Analog Microwave Radio Applications Mounts Directly to , A mechanically and electronically tunable local oscillator/ mixer assembly designed for operation in , receive end of a point-to-point microwave radio system. A Gunn diode and GaAs varactor diode are coupled , silicon Schottky diode matched to an open waveguide assembly which provides reasonable conversion loss , Recommended DC Return ( Mixer Diode ) Waveguide Size/Flange IF Connector ( Mixer ) 1. 2. 3. 4. Available in 600


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PDF MA87926 WR-42, UG-595/U GaAs varactor diode high power waveguide isolators AM tuning capacitor
1999 - 5082-2835 diode

Abstract: "5082-2835" 5082-2817 HSCH-3486 HSCH-5310 5082-2755 noise diode Silicon Point Contact Mixer Diodes Microwave Mixer Diodes
Text: ideal diode and less than 1.1 for a silicon Schottky diode . Variations in n are not important for n , The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky , this case the mixer may be called an upconverter. For a given local oscillator frequency, the , the effect of the amplifier following the mixer . Diode manufacturers include the effect of a 1.5 dB , amplifier in the mixer noise definition. In this paper diode efficiency will be measured by conversion


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backward diode

Abstract: tunnel diode General Electric "backward diode"
Text: the local oscillator frequency. Semiconductor mixer and detector diodes for microwave applications , circuit which makes use of the nonlinear properties of a mixer diode to produce a difference frequency , with a single diode or more commonly, with multiple diodes in balanced or double balanced mixer , detect signals of about - 50dBm compared with about - 100 dBm for a mixer of comparable bandwidth , in mixer applications requiring a better noise figure than can be achieved with silicon diodes and


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PDF CT3508-1 backward diode tunnel diode General Electric "backward diode"
1996 - x band gunn diode

Abstract: high power waveguide isolators wr 90 x band flange waveguide GaAs varactor diode
Text: Electronic Tuning Allows Automatic Frequency Control (AFC) Suitable for Digital or Analog Microwave Radio , ) Description A mechanically and electronically tunable local oscillator/ mixer assembly designed for operation , the receive end of a point-to-point microwave radio system. A Gunn diode and GaAs varactor diode are , packaged silicon Schottky diode matched to an open waveguide assembly which provides reasonable conversion , Isolation Recommended DC Return ( Mixer Diode )4 Waveguide Size/Flange IF Connector ( Mixer ) Symbol F F/V VOP


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PDF MA87925 UG-595/U WR-42 WR-42, x band gunn diode high power waveguide isolators wr 90 x band flange waveguide GaAs varactor diode
Not Available

Abstract: No abstract text available
Text: j rE Application Note Reliability & Screening Considerations for Microwave Mixers M508 , erm etic packages fo r Schottky diode quads are not practical for high frequency m icrow ave m ixers , Considerations for Microwave Mixers M508 Reliability Considerations High-Rel Screening (cont'd , pricing. MTBF For Microwave Mixers M T B F (Mean T im e Betw een Failures) is usually calculated as , vers Diode Quad Capacitors Com ponent Failure Rate Calculations: a) Silicon Schottky D iode Quad


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gold metal detectors

Abstract: Schottky diode wafer
Text: MICROWAVE offers silicon Schottky barrier diodes for three major classes of applications · · · ultrafast , mixer diode is noise flgure( NF), which determines the receiver's sensitivity to low signal levels. For , Schottky barrier diode technology Signal conditioning is the major application field for Schottky , below 1 watt. For switching applications, TEKELEC MICROWAVE offers Schottky barrier diodes as , bandwidth and required signal to noise ratio. 22 / 1 SILICON SCHOTTKY DIODES Mixer diodes are


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1997 - gold metal detectors

Abstract: IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes
Text: for lowest flicker noise rather than for lowest published noise figure. Another type of mixer diode , SCHOTTKY BARRIER DIODE SiO2 SCHOTTKY BARRIER METAL SCHOTTKY BARRIER n-TYPE SILICON n-TYPE SILICON MESH PASSIVATED DIODE Figure 1. Three Types of Schottky Barrier Diodes. 3-2 SiO2 Types of Diode Construction There are several assembly geometries used for Schottky barrier diodes , spaced diodes are created on the chip. The diode contacts are too small for thermocompression bonding


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PDF AN988, 26/IB gold metal detectors IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes
microwave mixer diode

Abstract: MBD103 noise diode
Text: Capacitance (Note 1) (f- 1.0 MHz) Ce - 0.15 - pF SILICON HOT-CARRIER MICROWAVE MIXER DIODE t D -1 , MBD103 ( silicon ) SILICON HOT-CARRIER DIODE (SCHOTTKY BARRIER DIODE ) . . . designed primarily for microwave mixer applications but suitable also for use in detector and ultra-fast switching , /iAI V(BR)R 40 5.0 - Volts Diode Capacitance (Vr = 0,f- 1.0 MHz, Note 11 CT - 0 88 1.0 pF Forward , FOR NOISE FIGURE NOTES ON TESTING AND SPECIFICATIONS Note 1 - Cq and CI are measured using a


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PDF MBD103 100juA microwave mixer diode MBD103 noise diode
DME2857-234

Abstract: F2011 F2012 ka band Limiter ka-band mixer DME2127-250 DME2859-000 DME2859-234 DME2957-000 DMF2820-000
Text:  Silicon Beam-Lead Schottky Barrier Mixer Diodes DME, DMFand DMJ Series Features ■Ideal for , optimum mixer design. For most applications the N-type silicon , low drive types are preferable, especially , mixer diodes are designed for applications through 40 GHz in Ka-band. The beam-lead design eliminates , involved in microwave devices. Beam-lead Schottky barrier mixer diodes are made by the deposition of a , , local oscillator drive levels to a higher value for high drive, low intermode mixer applications. The


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PDF 015mm) 005mm) DME2857-234 F2011 F2012 ka band Limiter ka-band mixer DME2127-250 DME2859-000 DME2859-234 DME2957-000 DMF2820-000
2003 - Not Available

Abstract: No abstract text available
Text: HMC350MS8 v01.0301 MICROWAVE CORPORATION GaAs MMIC HIGH IP3 SINGLEBALANCED MIXER , 0.6 - 1.2 , miniature single balanced mixer in an 8 lead plastic surface mount package. The passive GaAs schottky diode , - 154 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 , HMC350MS8 v01.0301 MICROWAVE CORPORATION GaAs MMIC HIGH IP3 SINGLEBALANCED MIXER , 0.6 - 1.2 GHz , FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation


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PDF HMC350MS8 HMC350MS8
2004 - HMC351S8

Abstract: No abstract text available
Text: MICROWAVE CORPORATION HMC351S8 v02.1001 GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER , 0.7 - 1.2 GHz Typical Applications Features The HMC351S8 is ideal for : Conversion Loss: 9.0 dB · , diode mixer implements planar on chip baluns and requires no external components. The mixer can be , SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave , IP3 DOUBLEBALANCED MIXER , 0.7 - 1.2 GHz Notes: MIXERS - SMT 12 For price, delivery, and to


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PDF HMC351S8 HMC351S8
2004 - HMC350MS8

Abstract: RF Microwave schottky Diode mixer
Text: HMC350MS8 v01.0301 MICROWAVE CORPORATION GaAs MMIC HIGH IP3 SINGLEBALANCED MIXER , 0.6 - 1.2 , miniature single balanced mixer in an 8 lead plastic surface mount package. The passive GaAs schottky diode , - 168 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 , HMC350MS8 v01.0301 MICROWAVE CORPORATION GaAs MMIC HIGH IP3 SINGLEBALANCED MIXER , 0.6 - 1.2 GHz , FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation


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PDF HMC350MS8 HMC350MS8 RF Microwave schottky Diode mixer
2003 - Not Available

Abstract: No abstract text available
Text: MICROWAVE CORPORATION HMC351S8 v02.1001 GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER , 0.7 - 1.2 GHz Typical Applications Features The HMC351S8 is ideal for : Conversion Loss: 9.0 dB â , a double balanced mixer in an 8 lead plastic surface mount package. The passive GaAs schottky diode mixer implements planar on chip baluns and requires no external components. The mixer can be , 12 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12


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PDF HMC351S8 HMC351S8
x band varactor diode

Abstract: varactor diode capacitance measurement varactor diode high frequency SMP1307-027LF Microwave zero bias detector diodes Microwave detector diodes rf detector diode low power BRO387-10A varactor diode datasheet SMP1345-079LF
Text: Resistor Single Schottky Diode Detector Schottky Diodes for Detector and Mixer Applications Product , select group of diodes from our diverse diode offering in stock and ready for immediate design into your , systems · Wireless microwave access (WiMAX) · Passive optical networks (PON) Attenuator PIN Diode SMP1307-027LF Schottky Diodes for Detector and Mixer Applications Detector Diodes Features , bandwidth · Low resistance for low loss Skyworks series of select silicon tuning varactor diodes are used


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PDF BRO387-10A x band varactor diode varactor diode capacitance measurement varactor diode high frequency SMP1307-027LF Microwave zero bias detector diodes Microwave detector diodes rf detector diode low power BRO387-10A varactor diode datasheet SMP1345-079LF
DMF2190

Abstract: DMJ2312-255 DMF2821-250 ka-band mixer DME2459 DMF2454 mixer diodes DME2127-250 DMF2835-000 DMF2820
Text: Silicon Beam­Lead Schottky Barrier Mixer Diodes DME, DMF and DMJ Series Features Ideal for , allowing proper selection for optimum mixer design. For most applications the N­type silicon , low drive , microwave devices. Beam­lead Schottky barrier mixer diodes are made by the deposition of a suitable , , local oscillator drive levels to a higher value for high drive, low intermode mixer applications. The , are especially well suited for use in microwave integrated circuits. The mounted devices can be


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PDF 015mm) 005mm) DMF2190 DMJ2312-255 DMF2821-250 ka-band mixer DME2459 DMF2454 mixer diodes DME2127-250 DMF2835-000 DMF2820
2009 - SURFACE MOUNT DIODES MIL GRADE

Abstract: Schottky diode Die flip chip high frequency mixer APN3001 BRO373-09A DMK2308-000 DMK2790-000 PN junction diode in mil grade RF Microwave schottky Diode mixer adaptive cruise control radar
Text: plastic surface mount packaged devices for mixer or detector applications. Skyworks series of GaAs flip , detector or in mixer circuits. The DMK2308-000 antiparallel pair is specifically well suited for use in , . Consequently, Schottky junctions are extremely well-suited for commutating mixer circuits in which ideal , systems, etc. Features · Designed for highvolume designs · High frequency (20­100 GHz) · Exceeds environmental requirements for MIC & hybrid applications · Designed for low junction capacitance and low


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PDF BRO373-09A SURFACE MOUNT DIODES MIL GRADE Schottky diode Die flip chip high frequency mixer APN3001 BRO373-09A DMK2308-000 DMK2790-000 PN junction diode in mil grade RF Microwave schottky Diode mixer adaptive cruise control radar
HSMS0001

Abstract: Silicon Point Contact Mixer Diodes hsch 3486 zero bias schottky diode
Text: choose a Doppler mixer diode for lowest flicker noise rather than for lowest published noise figure. Another type of mixer diode is the Schottky quad used for 3-4 double balanced mixers. These quads are , . The diode contacts are too small for thermocompression bonding. Contact is made by pressing a sharp , bonding, they are not small enough for operation a t high microwave frequencies. It is not possible to , passivated diode process. An oxide layer is formed over the entire silicon area. Then photolithographic


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PDF 26/Ig HSMS0001 Silicon Point Contact Mixer Diodes hsch 3486 zero bias schottky diode
2004 - HMC316MS8

Abstract: low power dc mixer
Text: HMC316MS8 v01.0301 MICROWAVE CORPORATION GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER , 1.5 - 3.5 , passive GaAs schottky diode mixer implements planar on chip balun transformers, and requires no external , FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation , v01.0301 MICROWAVE CORPORATION GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER , 1.5 - 3.5 GHz Absolute , .0301 HMC316MS8 MICROWAVE CORPORATION GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER , 1.5 - 3.5 GHz Evaluation PCB


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PDF HMC316MS8 HMC316MS8 low power dc mixer
2003 - Not Available

Abstract: No abstract text available
Text: HMC316MS8 v01.0301 MICROWAVE CORPORATION GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER , 1.5 - 3.5 , passive GaAs schottky diode mixer implements planar on chip balun transformers, and requires no external , FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation , v01.0301 MICROWAVE CORPORATION GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER , 1.5 - 3.5 GHz Absolute , .0301 HMC316MS8 MICROWAVE CORPORATION GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER , 1.5 - 3.5 GHz Evaluation PCB


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PDF HMC316MS8 HMC316MS8
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