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Part Manufacturer Description Datasheet Download Buy Part
LT1188CT Linear Technology IC 3.5 A BUF OR INV BASED PRPHL DRVR, PSFM5, TO-220, 5 PIN, Peripheral Driver
LT1080MJ/883 Linear Technology LT1080 - Advanced Low Power 5V RS232 Dual Driver/Receiver; Package: CERDIP; Pins: 18; Temperature: Military
LT3593ES6#PBF Linear Technology IC LED DISPLAY DRIVER, PDSO6, LEAD FREE, PLASTIC, MO-193, TSOT-23, 6 PIN, Display Driver
LT1188MK Linear Technology IC 3.5 A BUF OR INV BASED PRPHL DRVR, MBFM4, METAL CAN, TO-3, 4 PIN, Peripheral Driver
LT1188CK Linear Technology IC 3.5 A BUF OR INV BASED PRPHL DRVR, MBFM4, METAL CAN, TO-3, 4 PIN, Peripheral Driver
LTC4440EMS8E-5 Linear Technology LTC4440 - High Speed, High Voltage High Side Gate Driver; Package: MSOP; Pins: 8; Temperature Range: -40°C to 85°C

silicon PIN photodiode driver Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2014 - Not Available

Abstract: No abstract text available
Text: switch B 8 Vofd 7 Vdd A 1.0 μm Vofg 3 Oxidation silicon GND 5 Dummy photodiode Photodiode array Dummy photodiode 6 GND Anti-blooming switch N-type silicon KMPDC0488EA 1.0 , photodiode consisting of an N-type diffusion region formed on a P-type silicon substrate. The readout , ) as Q, V = Q/Cf ······(1) Photodiode potential [Figure 12] External driver circuit , spectral range. MOS shift register Clock pulse Video line Switch Photodiode 1 2 3


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PDF S10121 S10124 S3901 S3904 B1201, KMPD9008E01
IR photodiode sensor

Abstract: silicon linear photodiode array C2334 Photodiode Array linear linear array photodiode element photodiode linear array 256 silicon photodiode array C4351 Photodiode Array 2d AGE Module
Text: ) ELEMENT PIN SILICON PHOTODIODE ARRAY S3805, S4529 256ch parallel readout allows high-speed 2-D photometry The 16 X 16(256) elem ent PIN photodiode arrays are developed specifically for high-speed 2 , Photodiode Arrays/Linear Image Sensors ( 16-ELEMENT SILICON PHOTODIODE ARRAY S5668 SERIES For various measuring purpose This photodiode consists of 16 elem ents of Silicon Photodiode having active , 35, 38 and 46-ELEMENT PHOTODIODE ARRAYS For multichannel spectrophotometry T hese lin e a r


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PDF 16-ELEMENT S5668 175mm 575mm 46-ELEMENT C4351 IR photodiode sensor silicon linear photodiode array C2334 Photodiode Array linear linear array photodiode element photodiode linear array 256 silicon photodiode array Photodiode Array 2d AGE Module
2010 - S3903

Abstract: S3903-512Q S3903-256Q S3903-1024Q S3902-512Q S3902-256Q S3902-128Q S3902 silicon photodiode array high frequency linear cmos IMAGE SENSOR
Text: , excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays , N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a , 1 Clock 2 Degital shift register (MOS shift register) Active photodiode End of scan , silicon N type silicon 1.0 µm KMPDC0020EA 400 µm Dummy diode P type silicon S3902 , pin Window material Weight S3902512Q 512 40.6 S3903S3903256Q 512Q 256 512 31.75 22


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PDF S3902/S3903 S3902 S3903 SE-171 KMPD1043E02 S3903-512Q S3903-256Q S3903-1024Q S3902-512Q S3902-256Q S3902-128Q silicon photodiode array high frequency linear cmos IMAGE SENSOR
2005 - Not Available

Abstract: No abstract text available
Text: transistor array that addresses each photodiode , all integrated onto a monolithic silicon chip. Figure 1 , , excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays , N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a , SCAN Figure 2 Active area structure ACTIVE PHOTODIODE ACTIVE VIDEO Vss SATURATION CONTROL , SILICON KMPDC0020EA N TYPE SILICON P TYPE SILICON S3902 SERIES: a=50 µm, b=45 µm S3903 SERIES: a


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PDF S3902/S3903 S3902 S3903 SE-171 KMPD1043E01
2005 - Not Available

Abstract: No abstract text available
Text: , excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays , N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a , PHOTODIODE Vss b SATURATION CONTROL GATE SATURATION CONTROL DRAIN 1.0 µm a DUMMY VIDEO OXIDATION SILICON N TYPE SILICON 1.0 µm KMPDC0020EA 400 µm DUMMY DIODE P TYPE SILICON , pixels Package length Number of pin Window material *3 Weight *3: Fiber optic plate is available


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PDF S3902/S3903 S3902 S3903 SE-171 KMPD1043E01
2001 - C8225

Abstract: S3903-512Q S3903-256Q S3903-1024Q S3902-512Q S3902-256Q S3902-128Q S3902 S3903 linear uv photodiode array
Text: array that addresses each photodiode , all integrated onto a monolithic silicon chip. Figure 1 shows the , , excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays , N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a , PHOTODIODE Vss b SATURATION CONTROL GATE SATURATION CONTROL DRAIN 1.0 µm a DUMMY VIDEO OXIDATION SILICON N TYPE SILICON 1.0 µm KMPDC0020EA 400 µm DUMMY DIODE P TYPE SILICON


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PDF S3902/S3903 S3902 S3903 SE-171 KMPD1043E01 C8225 S3903-512Q S3903-256Q S3903-1024Q S3902-512Q S3902-256Q S3902-128Q linear uv photodiode array
2014 - Not Available

Abstract: No abstract text available
Text: switching transistor array that addresses each photodiode , all integrated onto a monolithic silicon chip , photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is , photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at , circuit st 2 Digital shift register (MOS shift register) Address switch Active photodiode , Saturation control drain Address switch Dummy diode b a Oxidation silicon Reset switch N


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PDF S3922/S3923 KMPD1037E03
2001 - S3924

Abstract: ts 8808 S3921 S3921-128Q S3921-256Q S3921-512Q S3924-1024Q S3924-256Q S3924-512Q
Text: photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is , photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at , ) END OF SCAN SOURCE FOLLOWER CIRCUIT Vdd ADDRESS SWITCH ACTIVE PHOTODIODE 2.5 mm 1 , DUMMY DIODE b a DUMMY VIDEO OXIDATION SILICON 1.0 µm START CLOCK Figure 2 Active area structure N TYPE SILICON RESET V KMPDC0019EA s Absolute maximum ratings Parameter


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PDF S3921/S3924 SE-171 KMPD1044E01 S3924 ts 8808 S3921 S3921-128Q S3921-256Q S3921-512Q S3924-1024Q S3924-256Q S3924-512Q
2014 - Not Available

Abstract: No abstract text available
Text: photodiode , all integrated onto a monolithic silicon chip. “■Equivalent circuit” shows the circuit of , photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is , photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at , Vdd Address switch Active photodiode 2.5 mm 1 Clock Active video Vss Saturation , silicon 1.0 µm Start Clock ■Active area structure N type silicon Reset V KMPDC0019EA


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PDF S3921/S3924 KMPD1044E03
2005 - S3923-256Q

Abstract: No abstract text available
Text: photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is , photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low , PHOTODIODE SATURATION CONTROL GATE SATURATION CONTROL DRAIN ADDRESS SWITCH DUMMY DIODE RESET SWITCH RESET RESET V Vss b a DUMMY VIDEO OXIDATION SILICON 1.0 µm 1.0 µm 400 µm N TYPE SILICON KMPDC0019EA P TYPE SILICON s Absolute maximum ratings S3922 SERIES: a=50 µm, b=45 µm S3923 SERIES: a


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PDF S3922/S3923 SE-171 KMPD1037E01 S3923-256Q
1998 - CIRCUIT OF SMOKE ALARM WITH PHOTODIODE

Abstract: equivalent transistor 2n3704 IR LED and photodiode electro magnetic detector LED monitor circuit diagram smoke DETECTOR CIRCUIT DIAGRAM ul217 SD4 diode VTS4085
Text: memory capacitor. A VDD guard-ring type foil path around the photodiode pin and the CMEMORY pin will , 16- Pin Plastic SOW-20 SD4P SD4WG Features General Description s 6µA average , capability s Horn modulation mode control s Piezoelectric horn driver This low power CMOS circuit is intended for use in a pulsed LED/ silicon cell smoke detector system. It is designed for use , device meets UL217 requirements and is available in a 16- pin plastic DIP or a 20 pin SOIC package. This


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PDF 16-Pin SOW-20 CIRCUIT OF SMOKE ALARM WITH PHOTODIODE equivalent transistor 2n3704 IR LED and photodiode electro magnetic detector LED monitor circuit diagram smoke DETECTOR CIRCUIT DIAGRAM ul217 SD4 diode VTS4085
1998 - CIRCUIT OF SMOKE ALARM WITH PHOTODIODE

Abstract: air horn IR LED and photodiode LED monitor circuit diagram SD4 diode smoke DETECTOR CIRCUIT DIAGRAM npn Zener LED IR LED infrared led ir led datasheet IR led detector
Text: = 22 M VDD = 9.0V, Non-Alarm Mode SD4 Pin Definition Name Function Photodiode Input , memory capacitor. A VDD guard-ring type foil path around the photodiode pin and the CMEMORY pin will , 16- Pin Plastic SOW-20 SD4P SD4WG Features General Description s 6µA average , control This low power CMOS circuit is intended for use in a pulsed LED/ silicon cell smoke detector , external components. This device meets UL217 requirements and is available in a 16- pin plastic DIP or a 20


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PDF 16-Pin SOW-20 CIRCUIT OF SMOKE ALARM WITH PHOTODIODE air horn IR LED and photodiode LED monitor circuit diagram SD4 diode smoke DETECTOR CIRCUIT DIAGRAM npn Zener LED IR LED infrared led ir led datasheet IR led detector
1996 - CIRCUIT OF SMOKE ALARM WITH PHOTODIODE

Abstract: IR LED and photodiode SD4 diode ir led ir led datasheet diode SD4 silicon PIN photodiode driver smoke DETECTOR CIRCUIT DIAGRAM sound horn equivalent transistor 2n3704
Text: VDD = 9.0, Non-Alarm Mode SD4 Pin Definition Name Function Photodiode Input Connect , memory capacitor. A VDD guard-ring type foil path around the photodiode pin and the CMEMORY pin will , Ordering Information Device Package Order No. SD4 16- Pin Plastic SD4P SD4 SOW , for use in a pulsed LED/ silicon cell smoke detector system. It is designed for use in low power , requirements and is available in a 16- pin plastic DIP or a 20 pin SOIC package. This device is a drop in


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PDF 16-Pin SOW-20 20-pin CIRCUIT OF SMOKE ALARM WITH PHOTODIODE IR LED and photodiode SD4 diode ir led ir led datasheet diode SD4 silicon PIN photodiode driver smoke DETECTOR CIRCUIT DIAGRAM sound horn equivalent transistor 2n3704
2001 - A Simple Rise and Fall Time Waveform Control

Abstract: silicon PIN photodiode driver high frequency linear cmos IMAGE SENSOR S3923-512Q S3923-256Q S3923-1024Q S3922-512Q S3922-256Q S3922-128Q S3922
Text: photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is , photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at , ) ADDRESS SWITCH ACTIVE PHOTODIODE 0.5 mm END OF SCAN SOURCE FOLLOWER CIRCUIT Vdd ACTIVE VIDEO , OXIDATION SILICON RESET SWITCH N TYPE SILICON RESET RESET V KMPDC0019EA s Absolute maximum , structure P TYPE SILICON S3922 SERIES: a=50 µm, b=45 µm S3923 SERIES: a=25 µm, b=20 µm Value 15


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PDF S3922/S3923 SE-171 KMPD1037E01 A Simple Rise and Fall Time Waveform Control silicon PIN photodiode driver high frequency linear cmos IMAGE SENSOR S3923-512Q S3923-256Q S3923-1024Q S3922-512Q S3922-256Q S3922-128Q S3922
1998 - CIRCUIT OF SMOKE ALARM WITH PHOTODIODE

Abstract: equivalent transistor 2n3704 sound horn LED monitor circuit diagram ir led datasheet IR LED infrared led 2N3704 SOW-20 smoke alarm circuit smoke detector waveforms
Text: VDD = 9.0V, Non-Alarm Mode SD2 Pin Definition Name Function Photodiode Input Connect , memory capacitor. A VDD guard-ring type foil path around the photodiode pin and the CMEMORY pin will , Description Package Options 16- Pin Plastic Dip SD2P This low power CMOS circuit is intended for use in a pulsed LED/ silicon cell smoke detector system. It is designed for use in low power, battery , requirements and is available in a 16- pin plastic DIP or a 20 pin SOIC package. SOW-20 SD2WG Features


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PDF 16-Pin UL217 SOW-20 CIRCUIT OF SMOKE ALARM WITH PHOTODIODE equivalent transistor 2n3704 sound horn LED monitor circuit diagram ir led datasheet IR LED infrared led 2N3704 SOW-20 smoke alarm circuit smoke detector waveforms
2005 - Not Available

Abstract: No abstract text available
Text: photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is , photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low , FOLLOWER CIRCUIT Vdd ACTIVE VIDEO Figure 2 Active area structure 2.5 mm b a OXIDATION SILICON ADDRESS SWITCH ACTIVE PHOTODIODE SATURATION CONTROL GATE SATURATION CONTROL DRAIN ADDRESS SWITCH DUMMY DIODE RESET SWITCH Vss DUMMY VIDEO 1.0 µm 1.0 µm 400 µm RESET RESET V N TYPE SILICON


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PDF S3921/S3924 SE-171 KMPD1044E01
2014 - Not Available

Abstract: No abstract text available
Text: each photodiode , all integrated onto a monolithic silicon chip. “■Equivalent circuit” shows the , , excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays , N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a , Clock l Multichannel spectrophotometry l Image readout system Active video Active photodiode , Oxidation silicon N type silicon 1.0 µm KMPDC0020EA 400 µm Dummy diode P type silicon


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PDF S3901/S3904 S3901 S3904 KMPD1036E04
2010 - silicon photodiode array

Abstract: high frequency linear cmos IMAGE SENSOR S3904-512Q S3904-256Q S3904-1024Q S3904 S3901-512Q S3901-256Q S3901-128Q S3901
Text: , excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays , N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a , Clock l Multichannel spectrophotometry l Image readout system Active video Active photodiode , silicon N type silicon 1.0 µm KMPDC0020EA 400 µm Dummy diode P type silicon S3901 , (10% of peak) Peak sensitivity wavelength 600 p Photodiode dark current*4 0.2 ID Photodiode


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PDF S3901/S3904 S3901 S3904 SE-171 KMPD1036E03 silicon photodiode array high frequency linear cmos IMAGE SENSOR S3904-512Q S3904-256Q S3904-1024Q S3901-512Q S3901-256Q S3901-128Q
2005 - Not Available

Abstract: No abstract text available
Text: , excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays , N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a , SCAN Figure 2 Active area structure ACTIVE PHOTODIODE ACTIVE VIDEO Vss SATURATION CONTROL , SILICON KMPDC0020EA N TYPE SILICON P TYPE SILICON S3901 SERIES: a=50 µm, b=45 µm S3904 SERIES: a , height Spectral response range 200 to 1000 (10 % of peak) Peak sensitivity wavelength 600 p Photodiode


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PDF S3901/S3904 S3901 S3904 SE-171 KMPD1036E01
Not Available

Abstract: No abstract text available
Text: guard-ring type foil path D D around the photodiode pin and the CM M R pin will enhance noise immunity of , Information General Description Order No. Device Package SD2 16- Pin Plastic SD2P SD2 SOW-20 SD2WG This low power CMOS circuit is intended for use in a pulsed LED/ silicon cell , with a minimum of external components. This device meets UL217 requirements and is available in a 16- pin plastic DI Por a 20 pin SOIC package. Features L1 6jiA - Average standby current □ Pin


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PDF 16-Pin SOW-20 UL217 2N3704
2001 - S3904

Abstract: TOPR 150 photodiode transistor high frequency linear cmos IMAGE SENSOR S3904-512Q S3904-256Q S3904-1024Q S3901-512Q S3901-256Q S3901-128Q S3901
Text: array that addresses each photodiode , all integrated onto a monolithic silicon chip. Figure 1 shows the , , excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays , N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a , PHOTODIODE Vss b SATURATION CONTROL GATE SATURATION CONTROL DRAIN 1.0 µm a DUMMY VIDEO OXIDATION SILICON N TYPE SILICON 1.0 µm KMPDC0020EA 400 µm DUMMY DIODE P TYPE SILICON


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PDF S3901/S3904 S3901 S3904 SE-171 KMPD1036E01 TOPR 150 photodiode transistor high frequency linear cmos IMAGE SENSOR S3904-512Q S3904-256Q S3904-1024Q S3901-512Q S3901-256Q S3901-128Q
2008 - C8225

Abstract: No abstract text available
Text: , excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays , N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a , scan Figure 2 Active area structure Active photodiode Active video Vss Saturation control , silicon KMPDC0020EA N type silicon P type silicon S3901 series: a=50 µm, b=45 µm S3904 series: a , sensitivity wavelength 600 p Photodiode dark current *4 ID 0.2 Photodiode capacitance *4 Cph 20 Saturation


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PDF S3901/S3904 S3901 S3904 SE-171 KMPD1036E02 C8225
2006 - constant current led driver lm317

Abstract: PLD-500 lm317 5V PLD-1250 PLD-5000 5v laser diode PLD-10 0 332 002 156 relay thermistor lm317 op amp temperature controller circuit
Text: Current, and Laser Diode Limit Current Monitor Limit Status · Supports all laser diode / photodiode pin , -10000) 10 A Laser Diode Driver Evaluation PCB for PLD-10000 Pin Descriptions for PLD-10000* PIN 1 , ANALOG IN [ +5V PLD10000 Laser Diode Driver PLD-10000 PLD10EV *Note that the pin layout , " Ø0.156" [Ø3.96mm] 2 HOLES 0.15" PIN 1 PLD10000 10 Amp Laser Diode Driver 3.05" 2.75 , Monitor pin . (3) Set the output power. Determine the photodiode current (IM at operating current IOP


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PDF PLD5000-00400-A PLD-200 PLD-500/ PLD-1250 PLD-5000 PLD-10000 constant current led driver lm317 PLD-500 lm317 5V 5v laser diode PLD-10 0 332 002 156 relay thermistor lm317 op amp temperature controller circuit
C8051F8

Abstract: SI1120 schematic diagram of energy saving lamps Si1102 thumbwheel Potentiometers sample microwave motion sensors SI1102-A-GM ACTIVE INFRARED MOTION DETECTOR DUAL IR REFLECTIVE SENSOR proximity color sensor
Text: Signal Processing Detectors Visible Light Photodiode IR Photodiode Silicon Labs Proximity , photodiode is then communicated to an MCU such as the C8051 family from Silicon Labs. The MCU can then , 3x3 ODFN Integrated differential photodiode , signal processor and LED driver Low noise ambient , the Silicon Labs Si1120. 14 Si1120 Block Diagram Signal processing IR Photodiode ALS Photodiode LED driver 15 Here is a block diagram of the Si1120. The analog front end consists of two


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PDF Si1120 Si1102EK com/Si1102EK Si1120EK com/Si1120EK AN442: Si1102 Si1120 C8051F8 schematic diagram of energy saving lamps Si1102 thumbwheel Potentiometers sample microwave motion sensors SI1102-A-GM ACTIVE INFRARED MOTION DETECTOR DUAL IR REFLECTIVE SENSOR proximity color sensor
2007 - surface mounted transistor 1BW 17

Abstract: 74VHCT244AFT Hamamatsu Color sensor address MSTAR S390X
Text: to the anode (P-type silicon ) of each photodiode . KMPDC0059EA 6 , junction photodiode consisting of an N-type diffusion area formed on a P-type silicon substrate. The , part from the shift register. The photodiode anode ( silicon substrate) is connected to GND, and the , . 28 5-6. Precautions when configuring driver circuit boards . 29 6. Recommended driver circuits


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PDF SD-26 SE-171 KMPD9001E05 surface mounted transistor 1BW 17 74VHCT244AFT Hamamatsu Color sensor address MSTAR S390X
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