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ADS54T04IZAY Texas Instruments 2-ch 500MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85
ADS54T02IZAY Texas Instruments 2-ch 750MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85
ADS54T01IZAYR Texas Instruments 1-ch 750MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85
ADS54T04IZAYR Texas Instruments 2-ch 500MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85
ADS54T02IZAYR Texas Instruments 2-ch 750MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85
ADS54T01IZAY Texas Instruments 1-ch 750MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85

siemens bts 611 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - BTS 611

Abstract: BTS 611 L1 E3128A BTS611L1 BTS612N1 Q67060-S6302-A2 Q67060-S6302-A3 Q67060-S6302-A4
Text: PROFET® BTS 611 L1 Smart Two Channel Highside Power Switch Features Product Summary , . Semiconductor Group 1 12.96 BTS 611 L1 Pin Symbol Function 1 OUT1 (Load, L) Output 1 , 40839 Semiconductor Group 2 BTS 611 L1 Thermal Characteristics Parameter and Conditions , without blown air. Semiconductor Group 3 BTS 611 L1 Parameter and Conditions, each channel , BTS 611 L1 Parameter and Conditions, each channel Symbol at Tj = 25 °C, Vbb = 12 V unless


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PDF components15) systems16) BTS 611 BTS 611 L1 E3128A BTS611L1 BTS612N1 Q67060-S6302-A2 Q67060-S6302-A3 Q67060-S6302-A4
POWER SUPPLY BTS SIEMENS

Abstract: C67078-S5305-A3 bts410 C67078-S5305-A4 BTS410D siemens bts 611 jst test report SL C67078-S5305-A5 410D Diode LT 410
Text: Siemens Aktiengesellschaft 611 This Material Copyrighted By Its Respective Manufacturer BTS 410 D/E/F/G , PROFET Preliminary Data BTS 410 D/E/F/G High-side switch Short-circuit protection , : Short-circuit protection by overtemperature protection Type Ordering code BTS 410D C67078-S5305-A3 BTS 410 E C67078-S5305-A4 BTS 41 OF C67078-S5305-A5 BTS 410 G C67078-S5305-A6 Maximum Ratings Parameter Symbol Values , Copyrighted By Its Respective Manufacturer BTS 410 D/E/F/G Electrical Characteristics at Tj = 25 °C


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PDF C67078-S5305-A3 C67078-S5305-A4 POWER SUPPLY BTS SIEMENS C67078-S5305-A3 bts410 C67078-S5305-A4 BTS410D siemens bts 611 jst test report SL C67078-S5305-A5 410D Diode LT 410
1997 - BTS 129

Abstract: tle 4214 BTS 240 BSP 452 BTS 740 s2 BTS 721-L1 bts555p bts 2 2 2 bts 550 N1 5226
Text: BTS 620 L1, 621 L1 100 BTS 611 L1, 612 N1 BTS 721 L1 65 BTS 630 BTS 730 60 BTS , 2 x 350 2 x 200 TLE 5226 G TLE 5227 G 250 TLE 4224-2 200 BTS 110 170 150 BTS 113 A BTS 112 A 120 BTS 115 A BTS 117/917 BTS 120, 121 A BTS 114 A 100 60 BTS 131, 132 50 BTS 130, 129 BTS 133/933 28 BTS 140 A BTS 141/ 941 18 TLE 5224 G2 BTS 149/949 BTS 240 A in Bipolar Technology (DOPL) IL (sat) (mA) 1 Channel 2 Channel 2 x


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PDF 410x2 432x2 442x2 BTS 129 tle 4214 BTS 240 BSP 452 BTS 740 s2 BTS 721-L1 bts555p bts 2 2 2 bts 550 N1 5226
BTS100

Abstract: No abstract text available
Text: SIEMENS BTS 100 Drain-source on-state resistance ÄDS«on, Parameter: / D = - 5 A, VG S = - 10 V , 6 -8 SIEMENS =f ( T c) BTS 100 Continous drain current / D Parameter: > - 10 V Forward , Sem iconductor G roup 6 SIEMENS BTS 100 Transient therm al im pedance Z m JC = f ( t p) Param eter: D = tp /T Sem iconductor Group 6-10 SIEMENS BTS 100 Package Outlines TO 220 , SIEMENS TEMPFET BTS100 · · · · P channel Enhancem ent mode Tem perature sensor with


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PDF BTS100 O-22QAB C67078-A5007-A2 C67078-A5007-A4 E3045 C67078-A5007-A7 E3044 C67078-A5007-A9 BTS100
2000 - bts 2106

Abstract: bts 425 l1 80N04 BTS 5155 BTS 2146 Tekelec TA BTS 3012 BTS 240-A SIEMENS tle 420 lt 6228
Text: ,7 d f z,f 140 BTS 5155 f 100 BSP 762 T BTS 462 T d f 15 BTS 611 L1, 14 15 14 , ® (Smart SIPMOS® Technology) Two channel switches with internal current limitation Type BTS 611 L1 , BTS 611 621 711 721 S2 L2 L1 L1 q q q q q BTS 730 BTS 550 650 , replace BTS 707 ) Should be used instead of BTS 725 L1 or BTS 726 L1. Without overvoltage and , ) BTS 436 should be used instead of BTS 432 x 2. 8 ) Should be used instead of BTS 733 L1 or BTS


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PDF B112-H6731-G8-X-7600 bts 2106 bts 425 l1 80N04 BTS 5155 BTS 2146 Tekelec TA BTS 3012 BTS 240-A SIEMENS tle 420 lt 6228
BTS 611

Abstract: 45VTYP
Text: Circuits Preliminary data BTS 611 Description PROFET" an intelligent power switch with integrated , Chip-ambient Rth JA 75 K/W BTS 611 | C67078-S5504-A2 11 Internal active clamp 2) Valid for 12 V applications , Electrical characteristics for each channel Preliminary data BTS 611 (atTj = 25 °C, unless otherwise , Preliminary data BTS 611 Truth table (priority given to activated (Vin = high) channel in the event of status , 7-198 Circuits Preliminary data BTS 611 ESD Protected Logic-Inputs: IN1 IIN2 ( 3/6 ) r- o


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siemens bts 611

Abstract: 5011-A BTS 611 7201 diode
Text: ) protection MAXIMUM RATINGS Pre! i mi nary data BTS 611 Description PROFETR an intelligent power switch , BTS 611 | C67078-S5504-A2 Internal active clamp 2) Valid for 12 V applications only For 24 V , data BTS 611 Description Symbol Characteristics Unit Conditions min. typ. max. Drain-source , Ÿ23Sb05 QQSMÖMb T75 ■Pre! i mi nary data BTS 611 Truth table (priority given to activated (V|n = high , interruption of Vbb Vbb / or Q- GND 6Z35b05 0054Ô4Û Ô4Ô 7-196 Circuits Preliminary data BTS 611 ESD


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PDF fi23StiDS 0054flS4 siemens bts 611 5011-A BTS 611 7201 diode
1996 - haller Relays

Abstract: TLE 4214 dip-8 4226G Siemens hkz SIPMOS SIEMENS 24l16 POWER SUPPLY BTS SIEMENS TLE 4214 8 pin Bts409 equivalent SO-24L16
Text: certain output current, so it does not set off a microcontroller in sleep BTS 611 L1 BTS 612 N1 , and hybrid technologies, such as Smart SIPMOS ( Siemens Power MOS) and SPT (Smart Power Technology , how Siemens power semiconductors can be combined with discrete semiconductors, opto semiconductors , complete, cost-effective solutions. Siemens offers a comprehensive range of power semiconductors that , Power stages BTS . BSP . BSS . BUZ . BUP . TCA . TLE . BDP . PZT . BCP .


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transistor Bts 240a

Abstract: BTS 621 L1 siemens scr BTS712 POWER SUPPLY BTS SIEMENS 4224s2 5227-G bts610l1 BTS308 siemens tle 4216
Text: SIEMENS One Channel Low Side Switches TEMPFET® (Smart SI PMOS® Technology) Selection Guide - , types_ _ Type BTS 114A BTS 130 BTS 140A BTS 240A 50 50 ^D S ^ D S (O N ) m a i - , [A] 17 27 42 58 12 27 (1 ). (2 ) (1 ), (1 ). (2 ) (2 ) (3) BTS 112A BTS 129 60 60 150 50 2.5 7.5 (1 ). (2 ) 56 65 (1), (2) BTS 110 BTS 120 100 100 200 100 , channel) Type [V] BTS 115A BTS 131 BTS 113A BTS 132 50 50 ^ D S (O N ) m ax -IS O -M O S (m a x


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PDF P-T0220-3-1 P-T0220-3-45 O-220 E3045) P-T0218-3-1 P-T0220-5-3 O-218AA) P-T0220-5-43 transistor Bts 240a BTS 621 L1 siemens scr BTS712 POWER SUPPLY BTS SIEMENS 4224s2 5227-G bts610l1 BTS308 siemens tle 4216
Not Available

Abstract: No abstract text available
Text: in series w ith IN and ST. Semiconductor Group 7-194 Preliminary data BTS 611 Truth , BTS 611 Short to Vbb or open load detection in OFF-state i , 1 ' IN 2 Semiconductor Group 7 - 199 BTS 611 Preliminary data 2: O peration w ith , Semiconductor Group 7-201 BTS 611 Preliminary data 4: Open load operation w ith additional external , Preliminary data SIEMENS BTS611 TWO CHANNEL PRO FET® D escrip tion PR O FET R an in


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PDF BTS611
1997 - transistor Bts 240a

Abstract: zenerdiode 218 bts 425 l1 BSP450 bts 610 l1 BTS 430 E2 BTS 307 BTS 130 BSP 452 BTS 121A
Text: ] Page [A] one channel active all channel parallel BTS 610 L1 L1 BTS 611 L1 L1 > 40 2 × 200 , Type Package Page RDS (ON) max ID - ISO ID - MOS(max) [V] BTS 114A VDS [m] [A] [A] 50 100 3.8 17 (1), (2) 20 50 7.5 27 (1), (2) 29 BTS 130 BTS 140A 50 28 13.5 42 (1), (2) 38 BTS 240A 50 18 21 58 (3) 47 BTS 112A 60 150 2.5 12 (1), (2) 56 BTS 129 60 50 7.5 27 (1


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PDF O-220 P-TO220-3-45 E3045) P-TO218-3-1 O-218 P-TO220-5-3 P-TO220-5-43 transistor Bts 240a zenerdiode 218 bts 425 l1 BSP450 bts 610 l1 BTS 430 E2 BTS 307 BTS 130 BSP 452 BTS 121A
1996 - P-DSO-20-9

Abstract: 409L1 SIPMOS bts409 PROFET-. Semiconductor Group Smart Sense High-Side Power Switch to-220
Text: 4 x TO-220/5 (e.g. BTS 409 L1) 2 x TO-220/7 (e.g. BTS 611 L1) 1 x P-DSO-20-9 (e.g. BTS 721 , % system costs is obtained by using two BTS 611 L1 double high-side switches with a forward resistance of , Ron max (25 °C) I NOM Package Status BTS 734 L1 BTS 726 L1 BTS 721 L1 BTS 711 L1 2 , two and four-channel highside switches (Table 1), Siemens uses the P-DSO-20-9 package (plastic dual , possible solution was to use four discrete high-side switches, such as the BTS 409 L1 with a forward


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PDF O-220 P-DSO-20-9 409L1 SIPMOS bts409 PROFET-. Semiconductor Group Smart Sense High-Side Power Switch to-220
zenerdiode 218

Abstract: BTS712
Text: SIEMENS Selection Guide Low Side Switches One Channel Low Side Switches TEMPFET* (S m art SIPMOS , (iiw.) Package [V] B T S 114 A B T S 130 B T S 140A BTS 240A 50 50 50 50 [m n ] 100 50 28 18 , ) S e m ic o n d u cto r G roup 6 03.96 SIEMENS H ITFE T (S m art SIPMOS® / SP T T , Package [A] 35 70 110 120 (4). (5), (6) (4), (5), (6) (4 ), (5), (6) (4), (5), (6) [V] BTS917 BTS 933 , Switches O n e c h a n n e l lo w s id e s w itc h e s D e v ic e s BTS 1 14A 130 140 A 240A 112A 129


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PDF P-T0220-3-1 O-220 P-T0220-3-45 E3045) P-T0218-3-1 O-218 P-T0220-5-3 P-T0220-5-43 zenerdiode 218 BTS712
1997 - TRILITHIC

Abstract: siemens coupling capacitor potential device cd type AEB02072 AED02155 AEP2071 AES02069 4268G transistor book siemens TLE-5206G
Text: Chip Photo of the BTS 611L1 Siemens Aktiengesellschaft 8 2.2 The Trilith The device , BTS 770 and BTS 771 Siemens Aktiengesellschaft 12 16,17 SL2 AEB02072 26, 27 SL1 , space between pulses). Siemens Aktiengesellschaft 16 BTS 770 / P = 5 W (0.25 s) Fit with , Standard PCB for BTS 770 and BTS 771 Siemens Aktiengesellschaft 19 1000 mV VFST 900 IFST = , Short-circuit Output Current of the BTS 771 as a Function of Chip Temperature Siemens Aktiengesellschaft


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PDF Q67007-A9254 Q67007-A9274 TRILITHIC siemens coupling capacitor potential device cd type AEB02072 AED02155 AEP2071 AES02069 4268G transistor book siemens TLE-5206G
POWER SUPPLY BTS SIEMENS

Abstract: No abstract text available
Text: ICminer.com Electronic-Library Service CopyRight 2003 SIEMENS BTS 780 For minimized /fDSON the two low-side , Electronic-Library Service CopyRight 2003 SIEMENS BTS 780 SL1 Œ SL1 CE GL1 CE GND CE GH1 CU ST1 CE SH1 c , 2003 SIEMENS BTS 780 Pin Definitions and Functions Pin No. Symbol Function 1, 2 SL1 Source of low-side , Electronic-Library Service CopyRight 2003 SIEMENS BTS 780 DVHS aeb02225 Figure 2 Block Diagram ■6S3StiQ5 01031431 , 2003 SIEMENS BTS 780 Circuit Description Input Circuit The control inputs GH1,2 consist of TTL/CMOS


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PDF E35b05 fl235b05 01034m 535b05 01034M2 Q1Q3443 P-T0263-15-1 POWER SUPPLY BTS SIEMENS
Not Available

Abstract: No abstract text available
Text: BTS 734L1). Semiconductor Group 153 1998-02-01 SIEMENS BTS 780 For minimized / f D O , 1998-02-01 SIEMENS BTS 780 Molding Compound SL1 C T Heat-Slug 1 SL1 □ DL1 GL1 , – Semiconductor Group ÔEBSbGS GIGBMS'Ï 7E3 155 1998-02-01 SIEMENS BTS 780 Pin Definitions and , – Semiconductor Group 6 2 3 5 b 05 Ü1D3430 445 ■156 1998-02-01 SIEMENS BTS 780 DVHS , 1998-02-01 SIEMENS BTS 780 Circuit Description Input Circuit The control inputs GH1,2 consist of


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PDF fiE35b05 Q103427 fl235b05 S35bGS Q1Q3443 P-T0263-15-1
diode 244

Abstract: No abstract text available
Text: SIEMENS BTS 244 Z Speed TEMPFET® • N-Channel • Enhancement mode • Logic Level Input , Semiconductor Group 1 1999-03-04 SIEMENS BTS 244 Z Maximum Ratings, at 7j = 2 5 °C unless , temperature of temperature sensor is below 175°C Semiconductor Group 2 1999-03-04 SIEMENS BTS , 1999-03-04 SIEMENS BTS 244 Z Electrical Characteristics Parameter Symbol Values Unit , 1999-03-04 SIEMENS BTS 244 Z Electrical Characteristics Parameter Symbol Values Unit


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PDF O-220 Q67060-S6000 O-220-5 Q67060-S6003 diode 244
d1117

Abstract: AES02079 AEB02072
Text: product is the BTS 621L1.) Semiconductor Group 1 1998-05-01 m as35b05 oin7Q4 44a m SIEMENS BTS 771 For , automotive and industrial applications. Semiconductor Group 2 aS35b05 D11170S 3B4 2 1998-05-01 SIEMENS BTS , 1998-05-01 SIEMENS BTS 771 Pin Definitions and Functions Pin No. Symbol Function 1,3, 25, 28 DL1 Drain of , a23SLG5 011=1707 157 4 1998-05-01 SIEMENS BTS 771 DHVS aeb02072 Figure 2 Block Diagram Semiconductor Group 5 1998-05-01 ■ÖE3SbOS Gin?OS [H3 H SIEMENS BTS 771 Circuit Description Input Circuit The control


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PDF H35bD5 P-DSO-28-9 gps05123 E35b05 d1117 AES02079 AEB02072
st 358 8-pin

Abstract: No abstract text available
Text: SIEMENS Induct ve and overvoltage output clamp j» vM . BTS 307 GND disconnect l- i gnd , Semiconductor Group 356 SIEMENS Timing diagrams Figure 1a: Vb& turn on, : BTS 307 Figure 3a , Semiconductor Group 358 SIEMENS Figure 7a: Overvoltage, no shutdown: a IN BTS 307 ii I Semiconductor Group 359 SIEMENS Package and Ordering Code All dimensions in mm BTS 307 Standard , Semiconductor Group of Siemens AG. TO-220AB/5, Option E3043 Ordering code I BTS 307 E3043 I C67078-S5204-A3


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PDF BTS307 E3043 C67078-S5204-A3 st 358 8-pin
AEB02072

Abstract: AES02079 GPS05123
Text: SIEMENS TrilithlC™ BTS 770 Overview Features • Quad switch driver • Free configurable as , automotive and industrial applications. Semiconductor Group 2 Ö535LD5 Oinböö 475 2 1998-05-01 SIEMENS BTS , ■I ä235b05 011^0 ÜE3 WU SIEMENS BTS 770 DHVS ST GH1 GH2 GND GL1 GL2 - Diagnosis ff 11 3.5 kQ R |2 , AEB02072 Figure 2 Block Diagram Semiconductor Group 1998-05-01 fiSBSbDS Oinb^l TbT SIEMENS BTS 770 Circuit , output ST to low. Semiconductor Group 7 1998-05-01 m fiEBSbOS Dlllf« A35 ■SIEMENS BTS 770 Truthtabfe


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PDF P-DSO-28-9 P-DSO-28-9 -TO2128X 35x45Â GPS05123 AEB02072 AES02079
transistor SMD 1p4

Abstract: KDS IR Sensor 4 MHZ KDS 6b transistor smd 4ss 410F2 siemens nox sensor C67078-A5007-A9 siemens bts 130 BTS 432 D2 E3043 smd diode p80
Text: < 75 K/W Semiconductor Group 6 -103 SIEMENS BTS 121A Electrical Characteristics at 7]= 25 °C , = -5V,7TS(on) = -2mA foff 0.5 — 2.5 (as Semiconductor Group 6 -130 SIEMENS BTS 121A Examples , -30 -34 V -40 -►Pus Semiconductor Group 6 -130 SIEMENS BTS 121A Max. power dissipation Ptot = , Group 6 -130 SIEMENS BTS 121A Drain-source on-state resistance ^DS(on) =/(7j) Parameter: ID = - 5 , SIEMENS BTS 121A Continous drain current ID = f(Tc) Parameter: KGS > - 10 V 100 (l^i-lOV) SIT00411


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PDF TQ-220AB C67078-A5007-A2 Q67060-S6202-A2 E3043 Q67060-S6202-A4 GPT05165 O-22QAB/5, E3062 BTS432E2 E3062A transistor SMD 1p4 KDS IR Sensor 4 MHZ KDS 6b transistor smd 4ss 410F2 siemens nox sensor C67078-A5007-A9 siemens bts 130 BTS 432 D2 E3043 smd diode p80
siemens BSM b2

Abstract: smd zener GD AX transistor fp 1016 79 p siemens igbt BSM 25 gb 100 d Siemens anwendungsbeispiele BTS412A TRANSISTOR EN SMD TZ N-Kanal FET DIODE ZENER BZW 04 BTS542R
Text: SIPMOS-Transistoren Bestell-Nr. B352-B6084 Siemens Aktiengesellschaft 34 Technische Angaben , am Beispiel des BUZ 338 ,10 V 0 o 0 Siemens Aktiengesellschaft 35 Technische , nH mJ Siemens Aktiengesellschaft 36 Technische Angaben SIPMOS-Kleinsignaltransistoren , . B352-B6155-X-X-7400 Siemens Aktiengesellschaft 37 Technische Angaben SITAC-AC-Schalter (SITAC = Siemens Isolierter Thyristor AC Schalter) Der SITAC ist ein Wechselstromschalter, bei dem Steuer- und


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PDF B152-B6299-X-X-7400 siemens BSM b2 smd zener GD AX transistor fp 1016 79 p siemens igbt BSM 25 gb 100 d Siemens anwendungsbeispiele BTS412A TRANSISTOR EN SMD TZ N-Kanal FET DIODE ZENER BZW 04 BTS542R
Not Available

Abstract: No abstract text available
Text: ] ■> ôE35b05 0045b34 4ÖD « S I E G BTS 542 D /E /F SIEMENS AKTIEN6ESELLSCHAF , . status current Siemens Aktiengesellschaft ^St 180 90% Voul 10% \/out BTS 542 D, I st = 50 pA , ISIEG BTS 542 D /E /F SIEMENS AKTIENGESELLSCHAF Electrical Characteristics (continued) Symbol , No Siemens Aktiengesellschaft 181 bDE D ■ß235bDS GOMSbSb 253 « S I E G BTS 542 D , ). Siemens Aktiengesellschaft 182 bOE D ■a23SbDS DGMSbB? 11T « S I E G BTS 542 D


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Not Available

Abstract: No abstract text available
Text: SIEMENS BTS 282 Z Speed TE M P FE T® • N-Channel • Enhancem ent mode • Logic Level , Group 1 1999-03-04 SIEMENS BTS 282 Z Maximum Ratings, at 7j = 2 5 °C unless otherwise , temperature sensor is below 175°C Semiconductor Group 2 1999-03-04 SIEMENS BTS 282 Z , without blown air. Semiconductor Group 3 1999-03-04 SIEMENS BTS 282 Z Electrical , Semiconductor Group 4 1999-03-04 SIEMENS BTS 282 Z Electrical Characteristics Parameter


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PDF 67060-S6004-A2 -T0220-7-180 67060-S6005-A2
Not Available

Abstract: No abstract text available
Text: SIEMENS HITFET® BTS 941 Smart Lowside Power Switch Features Product Summary • Logic , . Semiconductor Group Page 1 02.12.1998 SIEMENS BTS 941 Maximum Ratings at Tj = 25 °C unless , . Semiconductor Group Page 2 02.12.1998 SIEMENS BTS 941 Electrical Characteristics Parameter , Page 3 02.12.1998 SIEMENS BTS 941 Electrical Characteristics Parameter Symbol Values , Semiconductor Group Page 4 02.12.1998 SIEMENS BTS 941 Block Diagramm Terms Inductive and


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