PUCC5871QDWJRQ1
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Texas Instruments
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Automotive 30-A isolated 5.7-kV VRMS IGBT/SiC MOSFET gate driver with advanced protection features 36-SSOP -40 to 125 |
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UCC5871QDWJRQ1
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Texas Instruments
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Automotive 30-A isolated 5.7-kV VRMS IGBT/SiC MOSFET gate driver with advanced protection features 36-SSOP -40 to 125 |
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MG800FXF1JMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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MG250YD2YMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A |
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MG800FXF1ZMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD |
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TW030Z120C
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) |
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