The Datasheet Archive

Search Stock (6)

  You can filter table by choosing multiple options from dropdownShowing 6 results of 6
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
SI2302DS Philips Lighting Bristol Electronics - -
SI2302DS NXP Semiconductors Bristol Electronics 520 $0.56 $0.17
SI2302DS-T1 Vishay Intertechnologies Bristol Electronics 1,625 $0.56 $0.11
SI2302DS,215 NXP Semiconductors Chip1Stop 5 $0.30 $0.30
SI2302DS,215. NXP Semiconductors Farnell element14 0 £0.11 £0.11
SI2302DS215 NXP Semiconductors Rochester Electronics 91,527 $0.15 $0.12

No Results Found

si2302ds datasheet (9)

Part Manufacturer Description Type PDF
SI2302DS Philips Semiconductors N-Channel Enhancement Mode Field-Effect Transistor Original PDF
Si2302DS Toshiba Power MOSFETs Cross Reference Guide Original PDF
SI2302DS,215 NXP Semiconductors N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 2.5 A; Q<sub>gd</sub> (typ): 1.6 nC; R<sub>DS(on)</sub>: 85@4.5V115@2.5V mOhm; V<sub>DS</sub>max: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
SI2302DS-E3 Vishay Transistor Mosfet N-CH 20V 2.8A 3TO-236 Original PDF
Si2302DS SPICE Device Model Vishay N-Channel 1.25-W, 2.5-V Rated MOSFET Original PDF
Si2302DS-T1 Vishay Transistor Mosfet N-CH 20V 2.8A 3TO-236 REEL Original PDF
SI2302DS-T1 Vishay Intertechnology N-Channel 1.25-W, 2.5-V Rated MOSFET Original PDF
Si2302DS-T1-E3 Vishay Transistor Mosfet N-CH 20V 2.8A 3TO-236 REEL Original PDF
SI2302DST/R Philips Semiconductors Transistor Mosfet N-CH 20V 2.5A 3 pin SOT-23 T/R Original PDF

si2302ds Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Si2302DS

Abstract:
Text: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID , D 2 Top View Si2302DS (A2)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless , -53600-Rev. D, 22-May-97 11-1 Si2302DS Specificationsa Limits Parameter Symbol Test Conditions , -May-97 Si2302DS Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics 10 Transfer , Temperature (_C) 11-3 Si2302DS Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain


Original
PDF Si2302DS O-236 OT-23) S-53600--Rev. 22-May-97
1997 - A1 marking code

Abstract:
Text: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID , D 2 Top View Si2302DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless , -51353-Rev. B, 11-Dec-96 1 Si2302DS Specificationsa Limits Parameter Symbol Test Conditions , , VGEN = 4.5 V, RG = 6 W 36 A 45V ns VNLR02 Siliconix S-51353-Rev. B, 11-Dec-96 Si2302DS , Temperature (_C) 3 Si2302DS Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain Diode


Original
PDF Si2302DS O-236 OT-23) S-51353--Rev. 11-Dec-96 A1 marking code VNLR02 na4a S-51353
2008 - Si2302DS

Abstract:
Text: Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) ID (A , 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25 , FaxBack 408-970-5600 2-1 Si2302DS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE , -53600-Rev. D, 22-May-97 Si2302DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output , 408-970-5600 2-3 Si2302DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain


Original
PDF Si2302DS O-236 OT-23) 18-Jul-08
2000 - Si2302DS

Abstract:
Text: Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) ID (A , 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25 , FaxBack 408-970-5600 2-1 Si2302DS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE , -53600-Rev. D, 22-May-97 Si2302DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output , 408-970-5600 2-3 Si2302DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain


Original
PDF Si2302DS O-236 OT-23) S-53600--Rev. 22-May-97
2001 - si2302ds

Abstract:
Text: SI2302DS N-channel enhancement mode field-effect transistor Rev. 01 - 03 September 2001 M3D088 , using TrenchMOSTM1 technology. Product availability: SI2302DS in SOT23. 2. Features s s s s , . TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors SI2302DS N-channel , Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor 03aa17 120 , 2001 3 of 14 Philips Semiconductors SI2302DS N-channel enhancement mode field-effect


Original
PDF SI2302DS M3D088 SI2302DS MSB003 MBB076
Si2302DS

Abstract:
Text: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID , D 2 Top View Si2302DS (A2)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless , -53600-Rev. D, 22-May-97 1 Si2302DS Specificationsa Limits Parameter Symbol Test Conditions , , VGEN = 4.5 V, RG = 6 W 36 A 45V ns VNLR02 Siliconix S-53600-Rev. D, 22-May-97 Si2302DS , Temperature (_C) 3 Si2302DS Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain Diode


Original
PDF Si2302DS O-236 OT-23) S-53600--Rev. 22-May-97
2001 - MSB003

Abstract:
Text: SI2302DS N-channel enhancement mode field-effect transistor Rev. 02 - 20 November 2001 , package using TrenchMOSTM1 technology. Product availability: SI2302DS in SOT23. 2. Features s s s , Electronics N.V. MBB076 s SI2302DS Philips Semiconductors N-channel enhancement mode , November 2001 2 of 12 SI2302DS Philips Semiconductors N-channel enhancement mode field-effect , November 2001 3 of 12 SI2302DS Philips Semiconductors N-channel enhancement mode field-effect


Original
PDF SI2302DS M3D088 SI2302DS MSB003. MSB003
mitac 6120

Abstract:
Text: 7 PDD8 7 PDD6 R169 7 PDD9 5.6K 7 PDD5 7 PDD10 0603B 7 PDD4 D S Q16 SI2302DS SOT23_FET pull , GND GND CONN_AMP11201-6_60 GND +5VS_HDD Q12 (+5VS) S D SI2302DS SOT23_FET +12V 2 1M 0603B 2 +5V RP38 , GND 1 1 S C236 0.1U 0603B D SI2302DS SOT23_FET +12V 2 C223 1U BEAD_120Z/100M 0603B 0805C Q18 (+5VS


Original
PDF PDD15 PDD10 RDDP15 RDDP10 0603B DTC144WK OT23AN PDD15 mitac 6120 L25D mitac RP66
Si2302DS

Abstract:
Text: SPICE Device Model Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V Rated MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , -Apr-01 www.vishay.com 1 SPICE Device Model Si2302DS Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE , : 70983 17-Apr-01 SPICE Device Model Si2302DS Vishay Siliconix COMPARISON OF MODEL WITH MEASURED


Original
PDF Si2302DS 17-Apr-01
Si2302DS

Abstract:
Text: SPICE Device Model Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Characteristics · N-channel Vertical DMOS · Macro-Model (Sub-circuit) · Level 3 MOS · Applicable for Both Linear and Switch Mode · Applicable Over a -55 to 125°C Temperature Range · Models Gate Charge, Transient, and Diode , : 70983 1 SPICE Device Model Si2302DS Model Evaluation N-Channel Device (TJ=25°C Unless Otherwise , , Duty Cycle 2% Siliconix 4/17/01 Document: 70983 2 SPICE Device Model Si2302DS


Original
PDF Si2302DS
SI2302DS

Abstract:
Text: Tem ic S e m i c o n d u c t o r s 2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product , -236 (SOT-23) G S T Ï Ï /' Top View 2302DS (A2)* Marking Code Absolute Maximum Ratings (Ta = , W 2302DS Specifications3 Tem ic S e m i c o n d u c t o r s Limits Parameter Static , s 2302DS Typical Characteristics (25 °C Unless Otherwise Noted) I D - Drain Current (A , -53600- Rev. D, 22-May-97 U-15 2302DS Typical Characteristics (25 °C Unless Otherwise Noted


OCR Scan
PDF 2302DS O-236 OT-23) S-53600-- 22-May-97 SI2302DS
1996 - Si2302DS

Abstract:
Text: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID , D 2 Top View Si2302DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless , -51353-Rev. B, 11-Dec-96 4-1 Si2302DS Specificationsa Limits Parameter Symbol Test Conditions , -Dec-96 Si2302DS Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics 10 Transfer , Temperature (_C) 4-3 Si2302DS Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain


Original
PDF Si2302DS O-236 OT-23) S-51353--Rev. 11-Dec-96
Si2302ADS-T1-E3

Abstract:
Text: Specification Comparison Vishay Siliconix Si2302ADS vs. Si2302DS Description: N-Channel, 2.5 V (G-S) MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2302ADS-T1 Replaces Si2302DS-T1 Si2302ADS-T1-E3 (Lead (Pb)-free version) Replaces Si2302DS-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Si2302ADS Si2302DS Drain-Source Voltage , °C/W Si2302ADS Si2302DS PD W SPECIFICATIONS TJ = 25 °C, unless otherwise noted


Original
PDF Si2302ADS Si2302DS OT-23 Si2302ADS-T1 Si2302DS-T1 Si2302ADS-T1-E3 06-Nov-06
2005 - Si2302DS

Abstract:
Text: Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) ID (A , 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25 , FaxBack 408-970-5600 2-1 Si2302DS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE , -53600-Rev. D, 22-May-97 Si2302DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output , 408-970-5600 2-3 Si2302DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain


Original
PDF Si2302DS O-236 OT-23) 08-Apr-05
2N2222 NPN Transistor features

Abstract:
Text: si2302ds (V) 4.8 NPN 2N2222 Figure 6 shows the output characteristics of an N- 4.6 , figures tell us the general purpose of transistors 90% MOS si2302ds (e.g. 2N2222, 2N3904 , :(8863)577-2510 5 AN00-SR05EN July 2000 Characteristics of N-type MOSFET Si2302DS Transistor IDmax VGS(TH) Si2302DS 10A 0.65Vmin RDS 0.085 @ VGS=4.5V 0.115 @ VGS=2.5V remark


Original
PDF AN00-SR05EN AIC1639 AIC1639 AIC1638 AIC1638 100KHz 2N2222 NPN Transistor features transistor 4F mosfet driver with npn transistor NPN 2n3904 2N3904 2N2222 AN00-SR05EN fet 2n2222 2N2222 circuit 2n2222 npn transistor general purpose
B470K

Abstract:
Text: #3 14 SI2302DS C202 4.7U 1206 SOT23_FET GND 7 CD_RSTDRV 2 T_DATA C199 10U 1210 R177 1K 0603B , 3 FDD CONNECTOR VCC5 C152 4.7U Q15 1206 SI2302DS SOT23_FET L32 BEAD 0805C GND JP501 1 JP_SMT1 , LED_1102W GND D2 CONN_G462-01_N2447 CONN_G462-01_N2447 Q5 GND VCC5 D S SI2302DS G C135 10U


Original
PDF PDD11 PDD13 PDD15 PDD12 PDD14 PDD10 RDDP11 RDDP13 RDDP15 RDDP12 B470K n244 SDD13 2N7002-SOT23 RP23
mosfet driver with npn transistor

Abstract:
Text: ; (2) 4.8 (V) MOS si2302ds NPN 2N2222 pinch-off or saturation region , whereVDSVGS-VT , si2302ds 80% 70% transistors (e.g. 2N2222, 2N3904.etc) are not recommended due to its low current , N-type MOSFET Si2302DS Transistor IDmax VGS(TH) Si2302DS 10A 0.65Vmin RDS 0.085 @ VGS


Original
PDF AN00-006 AIC1639 AIC1639 AIC1638 AIC1638 100KHz mosfet driver with npn transistor 2N2222 NPN Transistor features npn 2n2222 2N3904 NPN 2n3904 2N2222 2n3904 2n2222 npn bipolar junction 2N2222 fet 2n2222
2N3904

Abstract:
Text: ) MOS si2302ds NPN 2N2222 pinch-off or saturation region , whereVDSVGS-VT ; 4.6 (3) linear , The figures tell us the general purpose of 90% MOS si2302ds 80% 70% transistors (e.g , Si2302DS Transistor IDmax VGS(TH) Si2302DS 10A 0.65Vmin RDS 0.085 @ VGS=4.5V 0.115 @


Original
PDF AN00-SR05EN AIC1639 AIC1639 AIC1638 AIC1638 100KHz 2N3904 NPN 2n3904 npn 2n2222 2N2222 2SD1803 2N2222A AN00-SR05EN mosfet driver with npn transistor Transistor 2SD1803
rp36

Abstract:
Text: PDD10 PDD4 PDD7 R103 5.6K 2 0603B D S Q26 SI2302DS SOT23_FET pull hi to +5vs_hdd HDD_RST , CONN_AMP11201-6_60 GND +5VS_HDD Q24 S D SI2302DS SOT23_FET +12V 2 (+5VS) +5V RP510 HDD_RST# PIOCS16# SIOCS16 , C565 0.1U 0603B Q502 D SI2302DS SOT23_FET +12V 2 (+5VS) +5V D S GND 2 G 1 3 GND Q503


Original
PDF PDD15 PDD10 RDDP15 RDDP10 0603B DTC144WK OT23AN rp36 C557 SDD11 SDD12
2N2222 NPN Transistor features

Abstract:
Text: regions of 5 operation: (1) cutoff region, where VGS VT; (2) 4.8 (V) MOS si2302ds NPN , The figures tell us the general purpose of 90% MOS si2302ds transistors (e.g. 2N2222, 2N3904 , N-type MOSFET Si2302DS Transistor IDmax VGS(TH) RDS Remark Si2302DS 10A 0.65Vmin


Original
PDF AN013 AIC1639 AIC1639 AIC1638 AIC1638 100KHz 2N2222 NPN Transistor features 2N2222 2n3904 mosfet driver with npn transistor NPN 2n3904 NPN SWITCHING transistor 2N2222 2N3904 AN013 fet 2n2222 2N2222 npn 2n2222
nokia rf power amplifier transistor

Abstract:
Text: BSH111 Si2302DS BSH105 BSH112 Si2304DS BSH108 BSH114 BSH121 The range of , Si2302DS PBSS5540Z Si2304DS Semiconductors Johan de Jonge / page:27 DMI ­ BL Power


Original
PDF BYD37J BYG60J BSH103 BSH111 PBSS5140D BSH105 BSH112 PBSS5320D BSH108 BSH114 nokia rf power amplifier transistor BSH108 Schottky Diode 40V 2A TOPSWITCH battery charger TRANSISTOR BL 100 BL 05A BSH103 TOPSWITCH battery charger 2A 1PS74SB43 SMA a7 diode
2005 - CDRH104R

Abstract:
Text: Si2302DS , and Fairchild Semiconductor FDN335N is attached in this document. Refer to " Reference Data". In , 4 No. CDRH104R/22 µH CPH6401 (1) S-8460B00AFT (2) FTS2001 (3) CPH3403 (4) (5) Si2302DS (6 , CPH6401 (16) CDRH104R/47 µH 3.3 V*1 CDRH104R/22 µH (17) (18) FTS2001 (19) CPH3403 (20) (21) Si2302DS (22 , ., Vth = 0.65 V min., Si2302DS Vishay Siliconix RDS(ON) = 0.115 max. (VGS = 2.5 V), SOT-23 package VGS = , ) 100 1000 (5) S-8460B00AFT (VOUT = 3.3 V) 100 Si2302DS ,D1FH3,CDRH104R/22 H µH Si2302DS , D1FH3


Original
PDF S-8460 S-8460 CDRH104R D1FH3
2005 - D1FH3

Abstract:
Text: Si2302DS , and Fairchild Semiconductor FDN335N is attached in this document. Refer to " Reference Data". In , ) FTS2001 (3) CPH3403 (4) (5) Si2302DS (6) FDN335N (7) CDRH104R/10 H CPH6401 (8) CDRH104R/47 H 2.5 V*2 , (20) (21) Si2302DS (22) FDN335N (23) CDRH104R/10 H CPH6401 (24) CDRH104R/47 H (25), (28) CDRH104R/22 H , 2.8 A max., Vth = 0.65 V min., Si2302DS Vishay Siliconix RDS(ON) = 0.115 max. (VGS = 2.5 V), SOT , ) 100 Si2302DS ,D1FH3,CDRH104R/22 H H Si2302DS , D1FH3, CDRH104R/22 4.0V (6) S-8460B00AFT (VOUT = 3.3


Original
PDF S-8460 S-8460 D1FH3 si2302ds
2005 - CDRH104R

Abstract:
Text: reference, efficiency data using Sanyo CPH6401, CPH3403, and FTS2001, Vishay Siliconix Si2302DS , and , ) CPH3403 (4) (5) Si2302DS (6) FDN335N (7) CDRH104R/10 µH CPH6401 (8) CDRH104R/47 µH 2.5 V*2 , µH (17) (18) FTS2001 (19) CPH3403 (20) (21) Si2302DS (22) FDN335N (23) CDRH104R/10 µH , ., Si2302DS Vishay Siliconix RDS(ON) = 0.115 max. (VGS = 2.5 V), SOT-23 package VGS = 8 V max., ID = 1.7 A , -8460B00AFT (VOUT = 3.3 V) 10 100 IOUT(mA) 1000 (6) S-8460B00AFT (VOUT = 3.3 V) Si2302DS ,D1FH3


Original
PDF S-8460 S-8460 CDRH104R nichicon super through capacitor 4700 uf 50 v S-8460B00AFT-TBG d1fh3 FDN337N CPH6401 Step-up PWM DC/DC Converter RB411D s-8460b00aft
PR515

Abstract:
Text: C +5V 1 PR4 1K 0603 2 D +3V 1 PR2 100K_NA 0603 PQ3 2N7002_NA G G PQ2 SI2302DS D S S Could


Original
PDF 120Z/100M PR501 PC518 SI4416DY SB3032P PC532 PC509 PL502 14U/13 PR515 mitac 1U-0805 mitac 8 pc17 PD3A RLZ2.0B RLZ2.7B
Supplyframe Tracking Pixel